ANOTHER VIEW OF NANOELECTRONICS AND
ITS APPLICATIONS
(“A PRAGMATISTS VIEW”)
Larry Cooper
Arizona Institute for Nano Electronics (AINE)
Formerly: Program Officer at Office of Naval Research
1969-2003
Nanoelectronics Program at ONR
1973-1978
• Scaling of silicon devices (< 1 micron)
• Radiation effects
• Reliability of silicon devices-submicron
– Contacts
– Surfaces and Interfaces in electronic materials
• High speed devices
– MBE for III-V semiconductors
– Heterojunction devices
• Development of physics based “device” simulations
– Hot electrons
– Monte Carlo
– Quantum transport
– Wave equation solutions in device configurations
ONR NANOELECTRONICS
1977 - George Gamota (DDR&E)
“Prepare a research plan for DoD leading to
an electronics technology based on devices with
20 Angstrom feature sizes.”
“USER”
ULTRA SUBMICRON ELECTRONICS RESEARCH
1979
1980-1984 $95M
Proposed and approved by Chief of Naval Research
Presented to Congress
Largest focused basic research (6.1) program at ONR
1980-1986 $65M
1985-2005- Other programs
Core, MURI, DURIP, ARI, SFP, JSEP, DUST, NICOP, NRL
2002-2007 Special add by Congress of $20M
ONR TOTAL-approx. $400 M (1975-2005)
OTHER DOD PROGRAMS
AFOSR – “USER”
ARO – “USER”
DARPA – “ULTRA” (1990-1998)
(“ ULTRA SMALL-ULTRA FAST ELECTRONICS- 2020”)
“MOLTRONICS”
“ABCS”
“GMR/TMR”
“SPINS”
Who Cares?
“Why do you want to do this?”
“What is your vision for these things?”
“Just because it is small will it do anything useful?”
“If so, what?”
WHO IS GOING TO PAY TO DEVELOP IT?
Just throw it over the fence?
NAVY MOTIVATION(CHALLENGES)
Radiation Hard
Space applications
High SPEED
Digital Signal Processing (400 GigaHertz DSP)
Non volatile
Hibernation mode
Instant-turn-on computers
Reprogrammable/Reconfigurable
Legacy electronics (“universal computer architecture”)
Versatile
NanoPOWER
Battery limited portable, wearable and remote applications
Nonvolatile electronics
Bio-implanted
Multifunctional Nanoelectronics/AREA
Intelligent Sensors (all of the above!)
“WE NEED CAPABILITIES THAT OUR “ADVERSARIES”
DON’T HAVE”
“USER”
MATERIALS
DEVICES
THEORY
FABRICATION
ARCHITECTURES?
EXPERIMENT
SIMULATION
COORDINATED-COMPREHENSIVE APPROACH
MATERIALS
III-V SEMICONDUCTORS
InAs-AlSb-GaSb (6.1 Angstrom)
HETEROJUNCTIONS (QUANTUM WELL-TUNNELING)
DIELECTRICS
THIN FILM FERROMAGNETIC METALS
SILICON
NANOWIRES
GROWTH MECHANISMS
DEFECT CONTROL
ATOMIC SCALE CHARACTERIZATION
SURFACES AND INTERFACES
CONTACTS
FABRICATION
E-BEAM LITHOGRAPHY
FOCUSED ION BEAM
NANOIMPRINT LITHOGRAPHY
HYBRID TECHNOLOGIES FOR 3D INTEGRATION
PATTERNED SELF ASSEMBLY (VLS)
DEVICES (1D-2D-3D)(Sub 100 nanometers)
HETEROJUNCTION DEVICES (III-V)(Si/Ge)
RESONANT TUNNELING DIODES (TRANSISTOR!)
NANOWIRE DEVICES
MESFETs in SOI (subthreshold)
SPINTRONICS-SPIN INJECTION
NANOMAGNETS/SEMICONDUCTOR (LOGIC/MEMORY)
HYBRID HALL EFFECT
TUNNELING MAGNETORESISTANCE (GMR/TMR)
SPIN MOMENTUM TRANSFER
PMC-NONVOLATILE MEMORY CELL(10nm)
QUANTUM WELL LASERS
INFRARED DETECTORS 1D-2D
______________________________________________
QUANTUM COHERENT ELECTRONICS
QUANTUM DOTS AND QUANTUM WIRES
CNT (CARBON NANOTUBES)
MOLECULAR DEVICES
SET (SINGLE ELECTRON TRANSISTORS)
GRAPHENE
ISSUES
CONTACTS
SURFACES AND INTERFACES- CONTROL
THIN FILM GROWTH (Multilayers)
MOBILITY
CONDUCTANCE
CONTROLLED FABRICATION
VARIANCE IN PERFORMANCE
LEAKAGE
POWER DISSIPATION
GAIN
HOW DO YOU CONNECT NANODEVICES?
HOW MANY DO YOU NEED TO DO SOMETHING USEFUL?
Leon Chua (Nonlinear Circuit Foundations for Nanodevices)
“Many molecular and nanodevices…are inept
in the sense that they can never be used to design an
amplifier, or an oscillator, let alone the garden variety of
nonlinear circuit modules essential for digital signal
processing and information technology”
You have to get circuit designers/simulations
involved!!!!
And that means you have to give them real
device data!!!!
Similar statements can be made for digital technologies!
ONR 1998-GRAND CHALLENGEMULTIFUNCTIONAL ELECTRONICS FOR INTELLIGENT NAVAL SENSORS
SPEED-1000X
POWER-1000X
AREA-1000X
SENSORS
3D INTEGRATION OF LAYERS WITH
DIFFERENT FUNCTIONS AND COUPLED
VERTICALLY
A-to-D & D-to-A
CONVERTERS
NANOMETER DEVICES
PROCESSOR
ARRAYS
TERABIT
NONVOLATILE
MEMORY
NANOPOWER***
TUNNELING
SPIN
MAGNETIC
OTHER FUNCTION
LAYERS
OTHER FUNCTIONS COULD
INCLUDE ADAPTIVE CONTROL
CIRCUITS AND OTICAL
COMMUNICATION
…
HYBRID
NANOCUBE
HOW DO YOU USE NANODEVICES?
3 SELECTED AREAS FOR APPLICATIONS
HIGH SPEED, LOW POWER DIGITAL CIRCUITS (TERAHERTZ?)
TUNNELING DEVICES
MASSIVE PARALLEL COMPUTING
MASSIVE CELLULAR ARRAYS (CNN)
NONVOLATILE RECONFIGURABLE COMPUTING
NANOMAGNETS AND SEMICONDUCTORS
______________________________
OTHER POSSIBILITIES
BIO-IMPLANTED (NANOPOWER AND COMPATIBILITY)
neuron communications/prosthetics
NEURO-COMPUTING (NEURONAL NETWORKS)
QUANTUM COMPUTING
Controlled Quantum Entanglement
(1)TUNNELING DEVICES
RESONANT TUNNELING DIODES (Significant Properties)
TERAHERTZ SPEED
LOW POWER
LOW NOISE
HIGH TEMPERATURE OPERATION
WAFER SCALE INTEGRATION
FUNCTIONS (RTD/HEMT)
DIGITAL PROCESSING (SRAM/ADC/ADDERS/COMPARATORS)
PHOTODETECTORS
HIGH SPEED CLOCK (PHASE NOISE <50 FEMTOSECONDS)
CIRCUIT (RTD/HEMT)
FEWER DEVICES PER FUNCTION THAN CMOS (5X – 10X)
DEMONSTRATED 50 GHz DSP
PROGRAMMABLE LOGIC GATES
MULTIVALUE LOGIC/MEMORY
30 NM X 30 NM
RESONANT TUNNELING DIODE BASED
CIRCUIT DEMONSTRATIONS WITHOUT NANOSCALE DEVICES
VERTICAL NANOWIRES-RTDs
Scale 30 nm
T= 4.2 K
Lars Samuelson-Lund University
PATTERNED GROWTH OF VERTICAL NANOWIRES
CONCEPTUALIZATION OF VERTICAL NANOWIRE CIRCUITS
FABRICATION OF VERTICAL NANOWIRES
Metal
silicon
oxide
ILD0
seed
CoSi2
(a)
N
A
silicon N
O
oxide W
I
ILD0
R
E
CoSi2
(b)
N
A
silicon N
O
oxide W
I
ILD0
R
E
CoSi2
(c)
IF WE ONLY HAD A RESONANT TUNNELING
TRANSISTOR!!!
NANOWIRE RTT?
Grand Challenge-Multifunctional Electronics for Intelligent Navy Sensors1998
SPEED-1000X
POWER-1000X
AREA-1000X
SENSORS
3D INTEGRATION OF LAYERS WITH
DIFFERENT FUNCTIONS AND COUPLED
VERTICALLY
A-to-D & D-to-A
CONVERTERS
NANOMETER DEVICES
PROCESSOR
ARRAYS
TERABIT
NONVOLATILE
MEMORY
NANOPOWER
TUNNELING
SPIN
MAGNETIC
OTHER FUNCTION
LAYERS
OTHER FUNCTIONS COULD
INCLUDE ADAPTIVE CONTROL
CIRCUITS AND OTICAL
COMMUNICATION
…
HYBRID
NANOCUBE
VERTICAL INTEGRATION OF A/D, SENSORS AND PROCESSORS
HAS BEEN DEMONSTRATED-WITHOUT NANODEVICES!
(2)MASSIVE PARALLEL COMPUTING
CELLULAR NONLINEAR NETWORK- CNN
j
i
The
Cellular
Nonlinear/neural
Network (CNN) is:
• an analog processor
array
• on a 2D grid
• with mainly local
interactions.
VISUAL COMPUTER
A CNN layer
3X3
xij - state/ yij - output
z - bias
uij –
sensory
input
0 1 0 
A  1 2 1
0 1 0
 1  1  1


B   1 8  1
 1  1  1
z= -0.5
Template/Gene - the program of the network: [A B z]
CNN IMAGE PROCESSING TEMPLATES
(Functions)
Contour extraction
Erosion
Corner detection
Selected object extraction
Horizontal translation
Half toning
Vertical translation
Texture discrimination
Diagonal translation
Gradient detection
Point extraction
Motion detection
Diffusion
Image differencing
Point removal
Speed detection
Thresholding
Deblurring
Logic operations
Others(over 100 discovered)
Current technology=settling time is about 1 microsecond!
CNN Universal Machine (CNN-UM)
LCCU
L
A
M
CNN
nucleu
s
L
L
M
LAOU LLU
GAPU
GAPU: Global Analogic
Programming Unit
LAM: Local Analog Memory
LLM: Local Logic Memory
LCCU: Local Communication and Control Unit
LAOU: Local Analog Output Unit
LLU: Local Logic Unit
APR: Analog Instruction Register
[A1 B1 z1], [A2 B2 z2], . . .
LPR: Logic Program Register
SCR: Switch Configuration Register
GACU: Global Analogic Control Unit <=Analogic (analog+logic) algorithm
THERE ARE NO NANOELECTRONIC
DEVICES! YET!
MASSIVE CELLULAR ARRAYS
CELLULAR NONLINEAR NETWORKS-CNN
INTELLIGENT SENSORS
Smart Cameras with integrated sensors (infrared/visible/multispectral)
*minimize bandwidth requirements (50,000 frames per second)
Multiple targeting and tracking-missile defense
Facial recognition
Epilepsy (dynamics of brain activity) detect precursor of events
Robot control (path planning and walking, climbing legged robots)
Surveillance (nanobots)(MAVs)(UAVs-Arizona!)
Collision Avoidance
Tactile sensors for robots or prosthetics
Real time endoscopic imaging and analysis
Pattern recognition (e.g. DNA microarrays)
“ARTIFICIAL EYE”
ARTIFICIAL EYE
***CNN BASED ALGORITHMS REPLICATE THE
COMPLEX IMAGE PROCESSING FUNCTIONS OF THE
RETINA!!!
ADVANTAGES OF USING RTDs IN CNN ARCHITECTURE
FEWER DEVICES
FASTER OPERATIONS
LOWER POWER
SMALLER CELL SIZE
INTEGRATED PHOTOSENSORS
(3)NANOMAGNETS AND SEMICONDUCTORS
HYBRID-NANOMAGNETIC STRUCTURES ON SEMICONDUCTORS
INHOMOGENEOUS OR LOCAL FRINGE FIELDS FROM
NANOMAGNETS AND MOBILE DOMAIN WALLS
HYBRID HALL EFFECT DEVICE
FERRO-FET
MAGNETIC BARRIER TUNNELING IN NANOWIRE DEVICES
CONTROLLING QUANTUM COHERENCE
CONTROL SPIN ENTANGLEMENT
FIELD COUPLED DEVICES AND ARCHITECTURES
MAGNETIC QUANTUM CELLULAR AUTOMATA-MQCA
COUPLED DOMAIN WALLS IN NANOWIRES
“NANOMAGNETIC COMPUTER?”
Ferromagnetic Gate
Source
Drain
AlGaAs
z
y
2DEG
GaAs Substrate
x
Bext
Source
Drain
A
0
3
B
C
n=0
B
G, T
n
0
0.12 meV
0.3
T
2
1
=
o
V
T/ T
10
10
T , n =
-1
0.2
n
0
1
2
3
4
5
6
V
B
=
0.1
0.06meV
10
-2
V
B
-0.4 -0.2
0
(E-V )/E
o
0.2
x
0.4
9.5
10
V
= 0 meV
10.5
o
11
(meV)
FERRO-FET (Jon Bird-SUNY/Buffalo)
0
11.5
Porod/Imre-U Notre Dame
FRINGE FIELDS FROM MAGNETIC NANOWIRE
DOMAIN WALLS
Stuart Parkin (IBM-Almaden)
CURRENT DRIVEN DOMAIN WALLS (THEORY)
Hybrid Hall Effect
Device
Magnetic
fringe field
V+
Bz
F
I+
InAs
I-
V-
•
•
•
•
x
locally strong fringe fields drive Hall
output voltage
fringe fields change sign when inplane M of F film reverses
narrow spatial profile of Bz:
sensitive to magnetization at end of
F
Developed for magnetometry on
nm scale F elements
How about a transistor? Nonvolatile logic?
My Recommendations for the Future
DETERMINE REAL NANODEVICE PARAMETERS
ENGAGE CIRCUIT DESIGNERS AND SIMULATIONS NOW!
EXPLORE APPLICATION CONCEPTS/PLATFORMS FOR:
1 DEVICE
10 DEVICES
100 DEVICES
1000 DEVICES
WHO IS GOING TO PAY FOR THIS?
END
Report: Nano-Electronics, -Photonics, and -Magnetics
Report of the National Nanotechnology Initiative Workshop
February 11-13, 2004, Arlington, VA