The “normal” state of layered dichalcogenides Arghya Taraphder Department of Physics and Centre for Theoretical Studies Indian Institute of Technology Kharagpur Workshop @ Harish Chandra Research Institute, November 12-14, 2010 Salient Features Transition metal dichalcogenide – TM atoms separated by two layers of chalcogen atoms TM atoms form 2D triangular lattice CDW & Superconductivity (likely to be anisotropic) Partially filled TM d band or chalcogen p band:[]d1/0 1T and 2H type lattice structure Both I and C CDW at moderate temperature Normal to SC transition with pressure/doping Normal transport unusual (cf. HTSC) Dichalcogenides: crystal structure Glossary Typical Phase diagram 2H-TaSe2 1T-TiSe2 D.B. Mcwhan, et al. PRL 45,269(1980)(2HTaSe2) A. F. Kusmartseva, et al. PRL 103, 236401(2009) (1TTiSe2) B. Sipos, et al. Nat. mater. 7, 960 (2008) (IT-TaS2) 1T-TaS2 Cava et al. 2H-TaS2 Phase diagram of 1T-TiSe2 : doping and pressure Quantum critical? Castro-Neto, loc cit Cava, PRL (2008) DC Resistivities Aebi, loc cit Resistivity of TMDs: 1T and 2H Y. Ueda, et al. Journal of Physical Society of Japan 56 2471-2476, (1987). P. Aebi, et al. Journal of Electron Spectroscopy and Related Phenomena 117–118 (2001) 2H-TaSe2 Vescoli et al, PRL 81, 453 (1998) R C Dynes, et al., EPJB 33, 15 (2003) Optical conductivity (0.04 < E < 5 eV range) Features of dc transport and Re σ (ω) •“Drude-like” peak at ω=0 for both systems along both ab and C-directions, narrowing at low T, indicating freezing of scattering of charge carriers at low energy •Tccdw does not affect transport at all, in fact thermodynamics is also unaffected •Broad conductivity upto large energies (~0.5 eV) Dynes loc cit Spectral weight distribution •Spectral weight is non-zero even upto 5 eV and beyond – “recovery” of total n uncertain •Shifts progressively towards FIR as T is lowered condensation at lower frequency • Nothing abrupt happens as T_CDW is crossed Transport scattering rate ab-plane Transport scattering rate c-axis Scattering rate from transport • Strongly frequency dependent. Rapid suppression of both Γab and Γc below characteristic freq. ~ 500 /cm Possible “pseudogap” in 20K curve •High and low T Γab cross each other for TaSe2 at some frequency •No saturation of Γab upto 0.6 eV •Both Γab and Γc are above Γ= ω line upto 2000 /cm and nearly linear in ω “QP” Scattering Rate & SE from ARPES Valla, PRL 85, 4759 (2000) Fit with momentum-indep. SE Valla, loc. cit.. Electronic structure Aebi, JES 117, 433 (2001) Self-energy from ARPES •Local - no k-dependence •Re Σ peaks at 65 meV, Im Σ drops there – characteristic of a photo-hole scattering off a collective ‘mode’ ~ 65 mev (too large for all phonons in TaSe2) •Im Σ(0) matches excellently with transport Γ(0) in its T-dependence Band structure 2H-TaSe2 Aebi, JES 117, 433 (2001) H.E. Brauer,et al. J. Phys. Cond. Matter 13, 9879 (2001) Tight Binding Description N V Smith, et al. J. Phys. C:Solid State Phys. 18 (1985) 3175-3189 Tight binding fit near FL for 2H-TaSe2 N V Smith, et al. J. Phys. C: Solid State Phys. 18 (1985) 3175-3189. Fermi surface map for the TB bands 2H-TaSe2 1T-TaS2 Liu, PRL 80, 5762 (1998) ARPES - 2H-TaSe2 Liu, PRL 80, 5762 (1998) Valla et al, PRL 85, 4759 (2000) CDW Gap ? Castro_Neto, PRL 86, 4382 (2001) )Pseudogap in 2H-TaSe2, Borisenko et al, PRL 100, 196402 (2008) Fermi surface and ARPES - 2H type S V Borisenko, et al. Phys. Rev. Lett. 100, 196402 (2008) N V Smith, et al. J. Phys. C: Solid State Phys. 18 (1985) 3175-3189. Fermi surface and ARPES - 1T type F.Clerc, et al. Physica B 351 245-249, (2004) N V Smith, et al. J. Phys. C: Solid State Phys. 18 (1985) 3175-3189. Fermi surface of 1T-TiSe2 P. Aebi, et al. Phys.Rev.B 61 16213, (2000) Superlattice & BZ in the CDW phase of Dichalcogenides 2H-TaSe2 1T-TaS2 N V Smith, et al. J. Phys. C:Solid State Phys. 18 (1985) 3175-3189. Our Work: LDA - tight binding fit near FL for 2H-TaSe2 N V Smith, et al. J. Phys. C: Solid State Phys. 18 (1985) 3175-3189. Fermi surface map for the TB bands 2H-TaSe2 1T-TaS2 Spectral Function for 2H-TaSe2 Before DMFT After DMFT Evolution of Spectral Function and fitting ARPES Conductivity and resistivity from DMFT DMFT with inter-orbital hopping for 2H-TaSe2 Opening of gap with increase in temperature Pressure dependence of Fermi Surface Change in spectral function with pressure Temperature dependent Spectral function at different pressure Change in resistivity at different pressure Conclusion • DMFT Spectral function is broadened. • With application of Inter-orbital coulomb interaction the system goes to insulator. • With application of Inter-orbital hopping DMFT orbital occupation changes from LDA. • There is a opening of gap with increasing temperature up-to 140K. • With decreasing pressure hole pockets in the Fermi surface disappear. • With increasing pressure the gap formed at the Fermi surface decreases.