R.S.F.Q 的應用與未來 p.s.kuo Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 簡介 當今世界上最快的集成電路採用的是超導 金屬鈮,而非半導體化合物製造。該技術基於 約瑟夫森結(Josephson junction)元件和超導連接 間單個磁通量子的傳送。 這些工作在10K溫度下的超導IC,於1980年早 期研究的超導IC大有不同。正是在那些項目快 結束的時候,一些新發現導致第二代超導材料 和電路製造工藝的出現,發展出一種基於單個磁 通量子的儲存和傳輸,稱為快速單磁通量子 (RSFQ)的邏輯電路結構。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 基本原理 約瑟夫森效應於1962年由約瑟夫森提出,1963年由安 德孫和夏皮羅實驗証實。現代約瑟夫森元件由兩層超 導薄膜及中間的絕緣層構成,電子對因穿隧效應穿越 絕緣層,在超導體內引起電流。 RSFQ電路中代表信號位的不是靜態電壓,而是磁通量 子的存在與否。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 基本原理 RSFQ電路不直接利用逃逸的量子,而是依靠磁通量子 進入或離開環路時在Junction中產生的短電壓脈衝。如 約瑟夫森結為1um邊長的方形,電壓脈衝持續時間約 1ps,幅度2mV。隨結尺寸減小,SFQ脈衝變窄,但幅 度-時間乘積保持不變2mV-ps {2x10-15韋伯 }。 電壓脈衝可通過微傳輸線或主動約瑟夫森傳輸線快速 傳輸到其它們。所有傳輸都是超導的,損失極小,時 鐘頻率高達750GHz。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 的主要優點 RSFQ technology ,one of the superconductor Josephsonjunction digital technologies,has attracted significant attention because of(1)high speed (2)low power operation Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 的主要優點 Extremely high operation speed clock period : (1) 10-20pS(100GHz) for fabricated 3 3 2 Nb / Al2O3 / Nb Josephson junction while bit error is well below 3 1015 bit 1 (2) as small as 1-2pS if submicron niobium technology were used----------Theoretical. Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 的主要優點 Power consumption Source : (1) energy dissipation inside the Josephson junction : 1018 joule/ bit -----很小 (2)dissipation in dc current supply resistors : 1W per gate -----比較大 與矽元件之比較 : 0.8μm 100GHz的RSFQ元件功率消耗約為普通矽元 件的十萬分之一。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 的其它優點 精度高: 交流約瑟夫森效應使得可用簡單的電壓測量導出輸出磁 通量子的頻率. 電路密度高 : Josephson-junction 超導連接 功率消耗~0 ∴可密集封裝而不會過熱 信號傳輸幾乎無色散:可改善晶片中互連相關的延遲-----進而 增加時鐘(clock)速度 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯 (1) AND function F=(A+B) ×(C+D) AND circuit (a) equivalent circuit Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯(1) (b) Dynamics for two set of data : {A=B=1,C=D=0} and {A=C=1, B=D=0} Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯(1) (1)A=B=1,C=D=0 : J3 “1” state SFQ is applied to J5,J7 but Ic5<Ic7 no output pulse J4 “0” state (2)A=C=1,B=D=0 : J3 “1” state J3,J4 are switched simultaneously SFQ inject to J7 through L1,L2 J4 “0” state Ic5+Ic6>Ic7 output pulse produce Ic : critical current Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯(2) XOR cell Two storage interferometers: :J1, J3, L1, J5, J7 And J2, J4, L2, J5, J7 which are biased by Ib1 and Ib2 . (a) Equivalent circuit Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯(2) (b)State transition diagram of XOR Ic5<Ic3+Ic4 ; State “10” , A輸入 “1”, J5 transit to initial “00” state Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯(3) Template circuit of a subfamily of B flip-flop. A Q1 R1 "1" Q2 R2 "1" Q1 S1 "0" Q2 S2 "0" R1 R2 "1" A S1 S2 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer "0" RTO RTCVD poly RTCVD nitride 用R.S.F.Q 做成的邏輯(3) state transition diagram Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride Dual –rail logic gate based on RSFQ cells 目的 : RSFQ 的靈敏度受限於電路參數和電源供應變異的影響, 尤其在極高頻時,時鐘(clock)脈衝的分佈將更為複雜.為解決此一問 題,我們可使用dual-rail 資料型式的非同步資料驅動閘. 缺點 : 硬體使用量大 for example : 44 Josephson junction for dual-rail gate XOR gate : only 9 junctions for classical RSFQ gate Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride Dual –rail logic gate based on RSFQ cells General structure of two-input data-driven dual-rail ligic gate Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride Dual –rail logic gate based on RSFQ cells Optimum solution : Using the clock-driven logic for “local” computations in the blocks,and dual-rail logic to exchange the data betweem blocks Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride On-chip and off-chip Package 的重要性 : perform ance of on chip 1000 perform ance of off chip RSFQ 技術可望解決現今on-chip的問題,使的CPU速度大為提昇 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride SFQ pulse 的傳輸 Josephson junction impedance matching Superconductor allows ballistic transfer of SFQ pulses between them Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride SFQ pulse 的傳輸 For S 4 4 μ 2 critical current I C 125A Z 2 On-chip ballistic transfer of SFQ pulses along superconductor microstrip lines 未來的用途: SFQ pulse transfer between chip to chip + superconductor microstrip lines are used as chip interconnects foup Department of Electrical Engineering, National Taiwan University Clean Module Load lock ellipsometer RTO RTCVD poly RTCVD nitride Chip-to-chip ballistic pulse transfer Equivalent circuit of chip interconnects L will distort and reflect the fast rise signal pulses Minimize the L effect : adding ground capacitors between L and Z C L / 2Z 2 on each side of L to match the Impedance Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride Chip-to-chip ballistic pulse transfer Limitation of L value : s 3 3 2 LC 3L / Z s : time constant of incoming pulses : delay time through the connector Typical values: s 5 ps Z 2 L 3 pH Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride Multiple Flux Quantum(MFQ) pulses 目的 : 為了提高L的最大容許值 ,必須使用具有高阻的傳輸線 -------方法 : 使用由多個Josephson junctions 堆疊而 成的驅動器以產生MFQ脈衝. Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride MFQ driver N nonlatching superconducting quantum interferometers connected in series equivalent circuit of MFQ driver Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride MFQ driver Output : sum of simultaneous SFQ pulses produced by N superconducting quantum interferometers Input : SFQ pulses Interferometer : magnetically controled by the corresponding output of an SFQ splitter Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride MFQ driver Result of using MFQ driver : L can be as large as 20~30 pH Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q 的主要應用 (1)包含了2500多個約瑟夫森結 基於相位調制/解調結構的 RSFQ高精度A/D轉換器 (2)工作時鐘為12.8GHz。 (3)再結合超導A/D的量子級精度 超導A/D轉換器的性能已超過以往任何技術。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride R.S.F.Q A/D 轉 換 器 的 特 性 寬頻動態可編程性能 : 用戶可以時時在位寬度和帶寬之間做平衡 ; 與此相比,半導體A/D轉換器則很少針對幾種工作頻率設計 應用 寬頻通信和雷達系統中,特別是全軟件無線電實現的無線通信 優點 提高接收靈敏度和精度,可簡化手機和終端的配置要求。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 結論 商業化前景 : (1) RSFQ不需要昂貴的製造設備,在矽晶片製造中幾 乎過時的1μm級設備就夠了,而且RSFQ元件的製造本身比任何半 導體製造都簡單,不需要包括外延生長、摻雜或離子注入在內的 複雜步驟,僅需要在矽晶圓片上濺射超導薄膜和絕緣層,而晶圓可 保持在接近室溫 ----------------------------製程便宜且容易。 速度是目前最快半導體IC的100倍,所有技術都需要考慮到電 磁信號的分布式本質。 Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride 結論 (2)市場對高頻寬應用的需求------促使超導RSFQ技術和當前已近 極限的半導體製造技術結合。 (3)最大的問題 : 為了做大尺寸的RSFQ系統, 封裝(packaging)是最大需 克服的難題, 而解決的方法就是使用 SFQ/MFQ drivers Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride Reference (1) Stas Polonsky. RSFQ: What we know and what we don’t . SUNYStony Brook Physics Department. Stony Brook,NY 11794-3800 (2) 《世界電子元器件》2月號 (3) O.A.Mukhanov, S.V. Polonsky ,and V.K.Semenov. New elements of the RSFQ logic famaily . IEEE Trans. on Magnetics, vol. 27, NO. 2, March 1991. Clean Module foup Department of Electrical Engineering, National Taiwan University Load lock ellipsometer RTO RTCVD poly RTCVD nitride