Company Introduction
Korea Instrument
2012
Agenda
Company Introduction
Company Overview and Organization
Business History
Product and Technology
Memory MEMS products
LSI products
Company Competitive Edge
Probe manufacturing using MEMS Fab
Bonding Automation
SI/PI simulation
Corporate Overview
Korea Instrument Co., Ltd.
• Founded in 1996
• Located in Hwaseong City (30km from Seoul)
• CEO Choi Jun Young
• World Top class supplier of high-growth NAND Flash Probe
card solution with MEMS technology
• Supports both Memory and LSI product with leading edge
technology
Employee Status
Total 215
• R&D 45
• Manufacturing 100
• QA & CS 32
• Sales & MKT 12
• Admin 26
- R&D Engineers portion : 21%
Organization Chart
CEO
Sales & R&D Development Div.
Sales
Manufacturing Div.
R&D
Manufacturing
Legal & Patent
Admin
Mechanical
Marketing
QA & CS
Electronics
LSI & MP dev.
Business History
1995~2000
Established KI (1996)
1995~2000
up SYSTEM LSI
• Established KISet(1996)
Division (1999)
• Set up SYSTEM
LSI Division
Setup R&D center(2000)
(1999)
• Setup R&D center (2000)
2001~2008
2001~2008
Manufacturing 12 Probe card for Flash
memory
(Korea
1st ) 2004
• Started
Manufacturing
of 12” Probe card for
Manufacturing
One touch
down Probe
Flash memory
(Korea
1st ) 2004
card (World 2nd) 2005
• Launch One touch down Probe card (World
Setup San Jose office 2007
2nd)
2005 MEMS card for
Start
Manufacturing
NAND
Flash
2008
• Setup
San
Jose office 2007
• Started Manufacturing of MEMS card for
NAND Flash 2008
Business History
2009
• Started Mass production of Full MEMS Card for NAND
2001~2008
Flash
Manufacturing 12 Probe card for Flash
2010
memory (Korea 1st ) 2004
Manufacturing
Oneup
touch
Probe
• Extended MEMS
Capacity
to down
400K
pins/m
card (World 2nd) 2005
1995~2000
• Achieved #1 Supplier of MEMS probe card in World Top
Setup San Jose office 2007
Established
KI (1996)
NAND
Flash Start
maker
Manufacturing MEMS card for
Set up SYSTEM LSI
NAND
Flash 2008
• Setup
Division
(1999) MEMS Fab for MEMS Probe manufacturing
Enhanced
LSI card business and LSI Card product line-up
Setup•R&D
center(2000)
(DDI, DC MEMS, Vertical)
2011
• Extended MEMS Capacity up to 700K pins/m
• Launched Vertical Type card using MLC for Flipchip test
• Started developing of MEMS Card for Flipchip test
KI Probe Card by Application
Rank
Company
Logic
SoC
(Array)
DRAM
NAND
RF
DC
Parametric
DDI
1
MJC(日)
O
O
O
O
O
O
O
2
FormFactor(美)
O
O
O
O
O
O
3
JEM(日)
O
O
O
O
O
O
4
MicroProbe(美)
O
O
O
O
KI
O
O
O
O
O
O
O
O
Source: Silicon Valley Test Conference 2010/ KI Marketing
● KI Card covers most of the application
☞ Plan to Launch DRAM burn-in card in 2011 1Q
KI Probe Card by Technology
Blade
Cantilever
Fine pitch
Cantilever
Vertical
MEMS
KI Coverage
Metal
Al/Cu pad
Au Bump
RF, Parametric
General
Purpose
DDI
•W
• Re-W
• Pt/ Pd alloy
Solder Ball bump /
Cu-pillar
Flipchip
•
•
•
•
Pd alloy
Cobra
Pogo
MEMS*
Al/ Cu Pad
High pins
• Rh Probe
• Ni-Co Body
• MEMS
Technology
* Under development
KI Probe Card Capability
Customer
Design
Key Component
Manufacturing
Application
Service
Design
- PCB/MLC/Probe
Probe card simulation
(Power/Signal/3D)
Repair Service
MEMS Probe
Fablite manufacturing
PCB,MLC
MEMS Probe
Needle
Probe card Manufacturing
& Integration (Memory, LSI)
Probe card
Assembly
Quality Assurance
INDEX
KI in House or Fablite
OUTSOURCE
manufacturing
Company Introduction
Company Overview and History
Revenue Trend
Product and Technology
Memory MEMS products
LSI products
Company competitive edge
Probe manufacturing using MEMS Fab
Bonding Automation
SI/PI simulation
Memory Product
PSJS
S-MEMS
• Cantilever Type
• Block type Pin
assembly
• W/Re-W needle
• One Touch Down
• Quick Delivery time
• Low cost
• 2D MEMS Probe
• Manual Bonding
• One Touch Down
• Longer life time
• Higher MWBF*
H-MEMS
• 2D MEMS Probe
• Auto Laser Bonding
• One Touch Down
• Longer life time
• Higher MWBF
• Fine pitch
*MWBF: Mean Wafers between Failure
▷PSJS(New Cantilever)
Cantilever Blocks
• Perform Pre-insert the needles in the unique blocks
• Assembles the Blocks
• Enable Fast Delivery
• Support One Touch Down
• Low cost by using W-needle
▷S-MEMS
• 2D MEMS Probe with Rh Probe end and Ni-Co body
• Manual Bonding
• One Touch Down
• Longer life time ~ 300K touch down
• Application : NAND FLASH, ONENAND
▷H-MEMS
• 2D MEMS Probe with Rh Probe end and Ni-Co body
• Auto Laser Bonding
• One Touch Down
• Longer life time ~ 300K touch down
• Application: NAND FLASH, NOR FLASH, ONENAND,
DRAM(WBI)
▷Memory Probe Card Specification
PROPERITIES
MECHANICAL
THERMAL
ELECTRICAL
ITEMS
PSJS
Probe Diameter
18~22um
10~15um
Scrub Mark Size
＜35um
≤20um
3mil OD
Probe Force
1.0g/mil
1.0g/mil
0.7g, 0.5g
Max Overdrive
200um
200um (Recommended <120um)
※ Min. Pad Pitch
75um
75um
Max. Array Size
12＂
12”
Max. Parallel
One Touch
One Touch
Life Time
200,000 T/D ＜
<300,000 T/D
※ Test Temp. Range
40 ~ 125 ℃
-40 ~125℃
Max. Current
1A
<700mA
※ Contact Resistance
8Ω
Signal : 80nA
GND : 400nA
<0.5Ω
Leakage
S-MEMS
H-MEMS
<50nA
Remarks
▷ S-MEMS/H-MEMS Differences
S_MEMS
H_MEMS
Manufacturing
Manual
Semi Auto
Min. Pitch
120um
110㎛
90um(2011 4Q)
Repair
1. Pin by Pin Repair
2. Manual
1. Pin by Pin Repair
2. Manual or Auto
Device
NAND FLASH, ONENAND
NAND FLASH, NOR FLASH,
ONENAND, DRAM(WBI)
▷ Delivery Lead Time
Case/Product
New Product
Repeat
order
•
•
•
•
•
•
•
•
•
•
S-MEMS
H-MEMS
5 weeks
5.6 weeks
Preparation (3)
Ass’y, Insert (0.8)
Solder (0.4)
Mask (0.4)
QA (0.4)
4 weeks
Preparation (2)
Ass’y, Insert (0.8)
Solder (0.4)
Mask (0.4)
QA (0.4)
• Preparation(2.6)
• Micro Laser Bonding(2)
• Ass’y & QA (1)
4.6weeks
• Preparation(1.6)
• Micro Laser Bonding(2)
• Ass’y & QA (1)
*All lead time calculated based on 12,000 pins product.
▷H-MEMS Roadmap
Target
DRAM
60um
12” Wafer Full Contact
Pitch vs. Size
FLASH
90um
12” Wafer Full Contact
Min. Pad Pitch(um)
120
110
12” Size - IPCC
110um
100
90um
90
80
8” Size - MLC
85um
12” Size - MLC
70
60um
60
Current
2011. 1Q
2011. 4Q
LSI Product
▷ LSI Cantilever Probe card
• General Purpose
• Support multi pin and multi parallel
• Easy repair and Fast delivery
• Apply to all major LSI application such as CIS, MCU, Logic and DC
parametric
■Key Specifications
Item
Contact Force
Pad Material
PCB size
Planarity
Probe Depth
Overdrive
Operating temperature
Probe Alignment
Probe Diameter
Probe Shape
Min pitch
Probe Material
Leakage level
Capability
Customer Specified
Al, Cu
137,230,250,260,280,305,330,440,480mm
+/-5um
Customer Specified
30~100um
Room Temp.
+/-5um
>10um
Flat, Radius,
25/50 um staggered
Re-W, W
<500fA (Low leakage), <20nA (Others)
▷Fine pitch Probe Card for DDI
• Ultra fine pitch, Staggered 14/28um
• Contact Gold bumped area (min. 13x55um)
• Apply to Display Driver IC wafer test
■Key Specifications
Item
Capability
Probes (Max.)
Over 3,000pins
Min. pad pitch
25um (In-line), 14 / 28um (Staggered)
Min. pad size
13 x 55um
Probe Material
Pt, Pd alloy, Re-W
PCB size
~Φ350mm
Parallel
1x1, 2x1,2x2, 2x3
Test Frequency
<1.8Gbps
Tester
TS6700, T6371/72/73 ST6730(A), D750EX
▷Vertical Card for Flipchip
•Support Solder bumped or Cu-pillar Flipchip wafer test
Wired Type(KVW*)
• Pogo Pin (Crown/Flat)
• Pitch 130um
• Full pad Array
• Max 4 Para
• Max 7,000pins
• Speed ~1GHz
MLC Type (KVM**)
• Pogo pin (Crown/Flat)
• Pitch 130um
• Full pad Array
• Max 8 Para
• Max 16,000pins
• Speed Over 3GHz
*KVW: KI Vertical card with Wiring
** KVM KI Vertical Card with MLC
MEMS Probe with MLC (VM2) is under development
• Fast delivery
• Low cost
Recommend to Development or
Mass production of Small pins
product
 Started MP in 2010 3Q
• High Speed
• Maximized # of pins
Recommend to Mass
produciton of high pins product
Started MP in 2011 1Q
▷Vertical Card Key Specifications
Wafer Side View
Cross-section View
PCB
Interposer
MLC
Pogo PIN
Item
Contact Force
Pad Material
Scrub Mark
Leakage current
High Speed
Overdrive
Operating temperature
Probe Alignment
Probe Diameter
Probe type
Min pitch
Probe Material
ATE system
Repair
Capability
Customer Specified
Solder Bumped, Al, Cu-pillar
<5um
<10nA
3GHz
50~100um
-20~85℃
<+/-10um
10~100um
Pogo pin(Crown or Flat Type)
130um
Be-cu / SK-4 / SK41
I-Flex, U-Flex, Tiger, T2000, D10
On-Site Pin-to Pin Repair
▷LSI MEMS card : DC
• For Low leakage DC test (Leakage level <500fA)
• Using MEMS Probe with Rd Probe end.
• Maximized Probe lifetime to ~1M touch down
• Customer specified Contact force
• Easy Repair by changing pin block
Tester Side View
Wafer Side View
Probe Tip Array
▷LSI MEMS card : CIS
• Support both Image & logic test
• Using MEMS Probe with Rd Probe end.
• Maximized Probe lifetime to ~1M touch down
• Customer specified Contact force
• Easy Pin block Repair
• Qualification
in 2011Bottom
1QView
Top View
Tester Side View
Wafer Side View
Probe Tip Array
▷LSI MEMS card Specification
Item
CIS
DC TEST
Contact Force
1gf/mil (Customer Specified)
Pad Material
Aluminum
Pitch
80um
Planarity
Probe Depth
Overdrive (Max.)
Operating temperature
Probe Alignment
Probe Diameter
Min pitch
Probe Material
Leakage
Top View
Bottom View
10um
Customer Specified
100um
-20 ~85°C
-20 ~150°C
+/-5um
10um+/-2um
80um
Nickel cobalt, Rhodium Probe
<20nA
<500fA
Company Introduction
Company Overview and History
Revenue Trend
Product and Technology
Memory MEMS products
LSI products
Company competitive edge
Probe manufacturing using MEMS Fab
Auto Bonding System
Simulation
Probe Manufacturing
■ Overview
MEMS Fab Operation
• Located at Inchon Songdo Techno complex
• Clean room size : 550㎥
• Equipment : Photo/Etch/electroplate
• Capacity : 200K pins / month (as of 2011, April)
Target Earned Value
• Minimal investment by Using MEMS fab infrastructure)
• Cost Reduction of MEMS Probe tip
• Quick Design optimization
■ 2011 Key Milestone
1Q
2Q
3Q
4Q
• Qualified NAND Flash probe tip
3월
• Begun MP stage 1 11월
(200K pins/month)
1월 Qualification 3월
• Complete
of DRAM WBI probe tip
• Started LSI probe tip
development for Flipchip
• Complete MP ramp up
(500K pins /month)
• Complete Qualification
of Flipchip probe tip
Auto Bonding System
■ Key Map of the System
• Full Automatic high accuracy micro assembly system by laser soldering.
Monitor
Pad Align Camera
Laser Controller
Laser Beam Head
Side View CCD camera
Welding side
Loader side
Probe Tip Magazine
Work Table
MEMS Tip Tray
System Control Computer
IPCC
Keyboard
Control Panel
■ Production History
2009 Nov.
2009 Dec.
Completed
Auto
Bonding
System
Setup
Started
Mass production
of 32nm NAND
flash probe card
2010 March
Started
Mass
production of
21nm NAND
flash probe card
H-MEMS P/Card
Mass Production
2010 Oct
• Launched Rainbow P/Card for 12 Inch DRAM WBI
2011 April
• Capacity 700K pins /month
Simulation
■ Signal Integrity
Component Modeling for Signal Lines with Field Solver(2D or 3D)
ZIF
Connector
Tester
Main Board
FPGA Board
Connector
Relay Board
Connector
FPGA
Board
Relay
Board
FPGA
Relay
Interposer
Probe
Sub
Head
Board
MEMS
Probe
Probe
DUT
DUT
(Die)
Probe Card
tp
CL
t d tr
tf
Eye-Diagram
■ Power Integrity
Decoupling Capacitor
VCC
GND
Burst Current Flows
H
L
V
Decoupling Capacitor
< Layout about Decoupling Capacitor >
VCC
GND
Burst Current Flows
H
L
V
These Inductance were screened out
Noise = 70mV
■ PI & SI Software
Software
Cat.
Part
3D Drawing &
Modeling
SI/PI
HFSS @
APDS
Q3D, Q2D @
APDS
●
●
SIWAVE @
APDS
PCB Data Conversion
●
Modeling
●
Circuit Analysis
●
 Measurement Equipment : TDR, Digital Oscilloscope
Designer @
APDS
●
■ Parts & Assembly Simulation
1. Structure Analysis
2. Thermal Analysis
Needle
Ff
Fc
Fc
z
Ff
Wafer y
3. Flow Simulation
Production Capacity
▷Memory
[Kpins/Month]
1200
1000
800
600
1000
400
200
700
300
0
2010
2011
2012
Product Type
2010
2011
2012
MEMS
300
700
1000
▷LSI
[Kpins/Month]
300
250
50
200
150
20
40
10
20
60
Vertical
100
50
2D MEMS
Cantilever
120
140
140
2010
2011
2012
0
Product Type
2010
2011
2012
Cantilever
120
140
140
Vertical
20
40
60
2D MEMS
10
20
50
Total
150
200
250
Thank you!