Homework #1 – Overview
Name:_____________________
Homework #1 – EE3401 Course Overview
This homework covers an overview of different elements of EE3401 Engineering Electronics that was
discussed in the first 1-2 weeks of this course. Answering some of these questions may require you to find
some of the required information in the textbook or elsewhere.
1. Semiconductor Diodes: Please plot the I-V characteristics of a semiconductor diode and add a short
description of what is observed in these characteristics, and why. Write down the diode equation,
describe the different terms in the equation, and also relate them to the I-V characteristics.
2. Bipolar Junction Transistors (BJTs): Please annotate the following I-V characteristics of a BJT.
Focus on the operational characteristics of the device relative to the biasing of the emitter-base
and collector-base, and what is required to use a BJT device as an amplifier.
This exercise should be submitted in both D2L and by email to ianf@kennesaw.edu
Ian Ferguson (ianf@kennesaw.edu)
EE3401: Engineering Electronics
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Homework #1 – Overview
Name:_____________________
3. Metal Oxide Semiconductor Field Effect Transistors (MOSFETs): Please annotate the following IV characteristics of a MOSFET. Focus on the operational characteristics of the device relative to
the Source, Drain and Gate voltages, and what is required to use a MOSFET device as an amplifier.
In addition, explain a.) the difference between VT in a MOSFET and Vt seen in the diode equation
(or for a BJT), and b.) what is pinch-off in a MOSFET and how does it differ from cut-off in a BJT.
4. Operational Amplifiers (Op-Amps): What is an Op=Amp and why do we begin this course in
considering making circuits with this type of device first rather than a BJT, or a MOSFET. Please
sketch the circuit symbol and model for an Op-Amp and show how it changes for an ideal Op-Amp.
This exercise should be submitted in both D2L and by email to ianf@kennesaw.edu
Ian Ferguson (ianf@kennesaw.edu)
EE3401: Engineering Electronics
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