CMD192
DC-20 GHz Distributed Driver Amplifier
®
Product Overview
Key Features
The CMD192 is wideband GaAs MMIC distributed amplifier
die which operates from DC to 20 GHz. The amplifier
delivers greater than 19 dB of gain with a corresponding
output 1 dB compression point of +24.5 dBm and noise
figure of 1.9 dB at 10 GHz. The CMD192 is a 50 ohm
matched design which eliminates the need for RF port
matching. The CMD192 offers full passivation for increased
reliability and moisture protection. This amplifier is the
perfect alternative to higher cost hybrid amplifiers.
• Ultra Wideband Performance
• Positive Gain Slope
• High Output Power
• Low Noise Figure
• Small Die Size
Ordering Information
Part No.
Description
CMD192
10 Piece Gel Pack
Functional Block Diagram
3 4
ACG1
ACG2
RFOUT & Vdd
5
Vgg2
2
1
RFIN
Vgg
9
GB
ACG4
8
7 6
ACG3
Note: Vgg2 is optional for gain control
Electrical Performance (Vdd = 8.0 V, Vgg = -1.0 V, TA = 25o C, F = 10 GHz)
Parameter
Min
Frequency Range
Typ
Max
Units
DC - 20
GHz
Gain
19.5
dB
Noise Figure
1.9
dB
Input Return Loss
25
dB
Output Return Loss
15
dB
Output P1dB
24.5
dBm
Supply Current
200
mA
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Absolute Maximum Ratings
Recommended Operating Conditions
Parameter
Rating
Parameter
Min
Typ
Max
Units
10 V
Vdd
5.0
8.0
10.0
V
Gate Voltage, Vgg
-4 to 0 V
Idd
RF Input Power
+23 dBm
Vgg
-4.0
-1.0
Channel Temperature, Tch
150° C
Electrical performance is measured at specific test conditions.
Electrical specifications are not guaranteed over all recommended
operating conditions.
Drain Voltage, Vdd
Power Dissipation, Pdiss
2.8 W
Thermal Resistance, QJC
23.2° C/W
Operating Temperature
-55 to 85° C
Storage Temperature
-55 to 150° C
200
mA
0
V
Exceeding any one or combination of the maximum ratings may cause
permanent damage to the device.
Electrical Specifications (Vdd = 8.0 V, Vgg = -1.0 V, TA = 25o C)
Parameter
Min
Frequency Range
Gain
Typ
Max
Min
DC - 10
15.5
18.5
17
Typ
Max
Units
10 - 20
GHz
20
dB
Noise Figure
2
2.5
dB
Input Return Loss
20
15
dB
Output Return Loss
20
15
dB
22
dBm
29
dBm
Output P1dB
22
Output IP3
Supply Current
24.5
19
31
140
200
260
140
200
260
mA
Gain Temperature Coefficient
0.012
0.02
dB/°C
Noise Figure Temperature Coefficient
0.006
0.009
dB/°C
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Typical Performance
Broadband Performance, Vdd = 8.0 V, Vgg = -1.0 V, Idd = 170 mA, TA = 25o C
25
5.5
20
5
15
4.5
S11
S22
4
Response/dB
Response/dB
S21
5
3.5
NF
0
3
-5
2.5
-10
2
-15
1.5
-20
1
-25
0.5
-30
Figure/dB
Noise
Figure/dB
Noise
10
0
0
2
4
6
8
10
12
14
16
18
20
22
24
Frequency/GHz
Frequency/GHz
Narrow-band Performance, Vdd = 8.0 V, Vgg = -1.0 V, Idd = 170 mA, TA = 25o C
25
5.5
20
5
15
4.5
S22
Response/dB
Response/dB
10
4
S21
5
3.5
NF
0
3
-5
2.5
-10
2
-15
1.5
-20
1
-25
0.5
-30
Figure/dB
Noise
Figure/dB
Noise
S11
0
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Frequency/GHz
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Typical Performance
Gain vs. Temperature, Vdd = 8.0 V, Vgg = -1.0 V
25
24
23
22
21
20
19
18
Gain/dB
Gain/dB
17
16
15
14
+25C
+85C
-55C
13
12
11
10
9
8
7
6
5
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Frequency/GHz
Noise Figure vs. Temperature, Vdd = 8.0 V, Vgg = -1.0 V
5
+25C
+85C
-55C
4.5
4
Figure/dB
Noise
Noise Figure/dB
3.5
3
2.5
2
1.5
1
0.5
0
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Frequency/GHz
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Typical Performance
Output Power, Vdd = 8.0 V, Vgg = -1.0 V, TA = 25o C
30
29
P1dB
28
Psat
27
26
25
Response/dBm
Response/dBm
24
23
22
21
20
19
18
17
16
15
14
13
12
11
10
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Frequency/GHz
P1dB vs. Temperature, Vdd = 8.0 V, Vgg = -1.0 V
30
29
28
+25C
+85C
27
-55C
26
25
24
P1dB/dBm
P1dB/dBm
23
22
21
20
19
18
17
16
15
14
13
12
11
10
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Frequency/GHz
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Typical Performance
Output IP3 vs. Temperature, Vdd = 8.0 V, Vgg = -1.0 V
40
35
IP3/dBm
Output IP3/dBm
Output
30
25
20
+25C
+85C
-55C
15
10
5
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
Frequency/GHz
Frequency/GHz
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Mechanical Information
Die Outline (all dimensions in microns)
247.00
114.00
3 4
5
1550.00
1408.50
2
968.00
708.00
1
391.00
9
8
7 6
142.00
1353.00
1497.50
2058.50
2185.50
2820.00
Notes:
1. No connection required for unlabeled pads
2. Backside is RF and DC ground
3. Backside and bond pad metal: Gold
4. Die is 85 microns thick
5. DC bond pads (2, 3, 4, 6, 7, 8, 9) are 78 microns square
6. RF bond pads (1, 5) are 108 x 193 microns
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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45 deg
4 dB
Port B
Port A
4 dB
Vgg (-)
45 deg
Pad Description
Vgg
Vdd
Vdd
Vdd
Vdd
For CMD146
Pad Diagram
3
4
4
Vdd
5
5
For CMD146
Vgg
LFT1
3 4 Vdd
Vgg
LFT2
Vgg
Vctl
400 o
LFT1
RF in
GND
Vdd
Vgg (-)
DC-20 GHz Distributed Driver Amplifier
®
Vgg
CMD192
Vgg
LFT2
20 oh
5
GB
Vgg
400 ohm
RF in
Vctl
To Gates
2
4 bit
Vgg
LFT3
LFT4
1
Vctl
Vdd
20 ohm
GB
Vgg
Vdd
RF out & Vdd
Vctl
Ven
RF out
0.01 uF
LFT3
LO
45 deg
Vdd
4 dB
3
9
RF
8
Vdet
RF in
7 6
LFT4
RF out & Vdd
Port B
RF out
4
3 bit
5
6
LO
0.01 uF
Ven
Vdet
Port A
RF
Vctl
Functional Description
4 dB
IF
45 deg
4 bit
RF in
Vgg
0.01 uF
F
Pad
Function
Description
Schematic
Vgg
Vdd
Vdd
Vctl
Vee
1
4 bit
1
Vctl
Vgg
RF in
IF
2
3
Vdd
4
Vdd
2
4 dB
For CMD146
Vgg
ACG2
ACG3
ACG4
45 deg
4 dB
Optional supply voltage for gain control
RF in
GND
Decoupling
and bypass caps required
Vgg2
RF in
RF in
Port B
GB
Vgg
Port B
3, 4
3 bit
ACG1, 2
Port A
RF out & Vdd
45 deg
Ven
RF out
45 deg
5
Port A
ACG1
ACG2
4 dB
RF in
4 dB
Vctl
Low frequency termination
Attach bypass capacitor per application circuit
RF out
Vdd1, 2, 3
Vgg
45 deg
Vgg
3 bit
5
Vdd
Vgg2
Vgg2
VddRF in
Vdd
50 ohm matched input
LO
RF
RF
Power supply voltage and 50 ohm matched
output
RF out & Vdd
RF1, 2 in
Vgg
RF1, 2 out
ACG3
Vdd
Vdd
IF
6, 7
ACG4
Low frequency termination
Attach bypass capacitor per application circuit
ACG3, 4
For CMD
RF in
LO
1
2
Vdd
IF1, IF2
3
8
Vctl
Vdd
1
GB
Vctl
9
4
Vctl
5
2
Connect Vdd
toVctrl1
DC ground
Vgg
Power supply voltage
Decoupling and bypass caps required
Vgg
Vgg
Backside
Ground
3
Vgg
Vgg
Vdd
RF in
GB
Vgg
Vctl
GND
Connect to RF / DC ground
ACG1
ACG2
Vgg
RF in
RF out & Vdd
Vgg
RF out
LO
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
RF1, 2 in
V
RF in
GB
Vctrl2
Vdd
GND
Vee
RF1, 2 out
RF
RF
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RF in
IF
RF out
CMD192
DC-20 GHz Distributed Driver Amplifier
®
Applications Information
Assembly Guidelines
The backside of the CMD192 is RF ground. Die attach should be accomplished with electrically and thermally conductive
epoxy only. Eutectic attach is not recommended. Standard assembly procedures should be followed for high frequency
devices. The top surface of the semiconductor should be made planar to the adjacent RF transmission lines, and the RF
decoupling capacitors placed in close proximity to the DC connections on chip.
RF connections should be made as short as possible to reduce the inductive effect of the bond wire. Use of a 0.8 mil
thermosonic wedge bonding is highly recommended as the loop height will be minimized. The RF input and output require
a double bond wire as shown.
The semiconductor is 85 um thick and should be handled by the sides of the die or with a custom collet. Do not make
contact directly with the die surface as this will damage the monolithic circuitry. Handle with care.
Assembly Diagram
0.1 uF CAP TO GROUND
to Vdd
100 pF CAP TO GROUND
(example: Presidio part
LSA1515B101M2H5R-L)
RF out
RF in
100 pF CAP TO GROUND
100 pF BYPASS CAP
0.1 uF CAP TO GROUND
0.1 uF BYPASS CAP
(example: Presidio part
MVB4080X104ZGK5R3L)
to Vgg
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge.
Proper precautions should be observed during handling, assembly and test.
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Applications Information
Application Circuit
100 pF
0.1 uF
Vdd
3
2
Vgg2
0.1 uF
100 pF
4
6
5
RF out
7
1
RF in
9
8
100 pF
0.1 uF
Vgg
0.1 uF
100 pF
Note: Drain voltage (Vdd) must be applied through a broadband bias tee or external bias network.
External DC block is required on RF input.
Biasing and Operation
The CMD192 is biased with a positive drain supply and negative gate supply. Performance is optimized when the drain
voltage is set to +8.0 V. The recommended gate voltage is -1.0 V.
Turn ON procedure:
1. Apply gate voltage Vgg and set to -1 V
2. Apply drain voltage Vdd and set to +8 V
Turn OFF procedure:
1. Turn off drain voltage Vdd
2. Turn off gate voltage Vgg
RF power can be applied at any time.
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Handling Precautions
Parameter
Rating
Standard
ESD – Human Body Model (HBM)
Class 1A
ESDA / JEDEC JS-001-2012
Caution!
ESD-Sensitive Device
RoHS Compliance
This part is compliant with 2011/65/EU RoHS directive (Restrictions on the Use of Certain Hazardous Substances in
Electrical and Electronic Equipment) as amended by Directive 2015/863/EU.
This product also has the following attributes:
• Lead Free
• Antimony Free
• TBBP-A (C15H12Br402) Free
• SVHC Free
• Halogen Free
• PFOS Free
Contact Information
For the latest specifications, additional product information, worldwide sales and distribution locations:
Web: www.qorvo.com
Tel: 1-844-890-8163
Email: customer.support@qorvo.com
Data Sheet Rev. A, May 23, 2022 | Subject to change without notice
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CMD192
DC-20 GHz Distributed Driver Amplifier
®
Important Notice
The information contained in this Data Sheet and any associated documents (“Data Sheet Information”) is believed to be
reliable; however, Qorvo makes no warranties regarding the Data Sheet Information and assumes no responsibility or
liability whatsoever for the use of said information. All Data Sheet Information is subject to change without notice.
Customers should obtain and verify the latest relevant Data Sheet Information before placing orders for Qorvo ® products.
Data Sheet Information or the use thereof does not grant, explicitly, implicitly or otherwise any rights or licenses to any
third party with respect to patents or any other intellectual property whether with regard to such Data Sheet Information
itself or anything described by such information.
DATA SHEET INFORMATION DOES NOT CONSTITUTE A WARRANTY WITH RESPECT TO THE PRODUCTS
DESCRIBED HEREIN, AND QORVO HEREBY DISCLAIMS ANY AND ALL WARRANTIES WITH RESPECT TO SUCH
PRODUCTS WHETHER EXPRESS OR IMPLIED BY LAW, COURSE OF DEALING, COURSE OF PERFORMANCE,
USAGE OF TRADE OR OTHERWISE, INCLUDING THE IMPLIED WARRANTIES OF MERCHANTABILITY AND
FITNESS FOR A PARTICULAR PURPOSE. Without limiting the generality of the foregoing, Qorvo® products are not
warranted or authorized for use as critical components in medical, life-saving, or life-sustaining applications, or other
applications where a failure would reasonably be expected to cause severe personal injury or death. Applications
described in the Data Sheet Information are for illustrative purposes only. Customers are responsible for validating that a
particular product described in the Data Sheet Information is suitable for use in a particular application.
© 2022 Qorvo US, Inc. All rights reserved. This document is subject to copyright laws in various jurisdictions worldwide
and may not be reproduced or distributed, in whole or in part, without the express written consent of Qorvo US, Inc. |
QORVO® is a registered trademark of Qorvo US, Inc.
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