10/9/2020 Electronic Circuits and Devices EC4050 FETs M.Yuvaraj MOSFETs (metal-oxide semiconductor fieldeffect transistor) • The two basic types of MOSFETs are enhancement (E) and depletion (D). • Of the two types, the enhancement MOSFET is more widely used. • Polycrystalline silicon is now used for the gate material instead of metal 1 10/9/2020 Enhancement MOSFET (E-MOSFET) • The E-MOSFET operates only in the enhancement mode and has no depletion mode. • it has no structural channel • For an n-channel device, a positive gate voltage above a threshold value induces a channel by creating a thin layer of negative charges in the substrate region. • The conductivity of the channel is enhanced by increasing the gate-to-source voltage and thus pulling more electrons into the channel area. Enhancement MOSFET (E-MOSFET) • The broken lines symbolize the absence of a physical channel. • An inward pointing substrate arrow is for n channel, and an outward pointing arrow is for p channel 2 10/9/2020 Depletion MOSFET (D-MOSFET) • The drain and source are diffused into the substrate material and then connected by a narrow channel adjacent to the insulated gate. • The D-MOSFET can be operated in either of two modes—the depletion mode or the enhancement mode. • The n-channel MOSFET operates in the depletion mode when a negative gate-to-source voltage is applied and in the enhancement mode when a positive gate-to-source voltage is applied. • These devices are generally operated in the depletion mode. Depletion MOSFET (D-MOSFET) • With a negative gate voltage, the negative charges on the gate repel conduction electrons from the channel, leaving positive ions in their place. • Thereby, the n channel is depleted of some of its electrons, thus decreasing the channel conductivity. • The greater the negative voltage on the gate, the greater the depletion of n-channel electrons. • At a sufficiently negative gate-to-source voltage, VGS(off), the channel is totally depleted and the drain current is zero 3 10/9/2020 Depletion MOSFET (D-MOSFET) • With a positive gate voltage, more conduction electrons are attracted into the channel, thus increasing (enhancing) the channel conductivity E-MOSFET Transfer Characteristic • n-channel device requires a positive gate-to-source voltage, and a pchannel device requires a negative gate-to-source voltage. • There is no drain current when VGS=0. Therefore, the E-MOSFET does not have a significant IDSS parameter, as do the JFET and the DMOSFET. • There is ideally no drain current until VGS reaches a certain nonzero value called the threshold voltage, VGS(th) 4 10/9/2020 E-MOSFET Transfer Characteristic • The equation for the parabolic transfer characteristic curve of the EMOSFET differs from that of the JFET and the D-MOSFET because the curve starts at VGS(th) rather than VGS(off). • The equation for the E-MOSFET transfer characteristic curve is • The constant K depends on the particular MOSFET and can be determined from the datasheet by taking the specified value of ID, called ID(on), at the given value of VGS and substituting the values into Equation. D-MOSFET Transfer Characteristic • D-MOSFET can operate with either positive or negative gate voltages • The point on the curves where VGS=0 corresponds to IDSS. • The point where ID=0 corresponds to VGS(off). 5 10/9/2020 Examples • The datasheet for a 2N7002 E-MOSFET gives ID(on)=500 mA (minimum) at VGS=10 V and VGS(th)=1 V. Determine the drain current for VGS = 5 V. • For a certain D-MOSFET, IDSS=10 mA and VGS(off) = -8 V • Is this an n-channel or a p-channel? • Calculate ID at VGS= -3 V. • Calculate ID at VGS= 3 V. E-MOSFET Bias • E-MOSFETs must have a VGS greater than the threshold value, VGS(th), so zero bias cannot be used. • Voltage-divider or drain-feedback bias arrangement can be used. 6 10/9/2020 Example • Determine VGS and VDS for the E-MOSFET circuit. Assume this particular MOSFET has minimum values of ID(on) = 200 mA at VGS = 4 V and VGS(th) = 2 V. Example • Determine the amount of drain current in following circuit. The MOSFET has a VGS(th) = 3 V 7 10/9/2020 D-MOSFET Bias • A simple bias method is to set VGS=0 so that an ac signal at the gate varies the gate-to source voltage above and below this 0 V bias point. • The purpose of RG is to accommodate an ac signal input by isolating it from ground. • Since there is no dc gate current, RG does not affect the zero gate-tosource bias. Example • Determine the drain-to-source voltage in the circuit. The MOSFET datasheet gives VGS(off) = -8 V and IDSS = 12 mA 8 10/9/2020 Reference • Electronics Principles by Albert Malvino and David J Bates • Electronic Devices by Thomas L Floyed • Microelectronic circuits by Adel S Sedra, Kenneth Carless Smith 2010, Oxford University Press 9
