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EE425 HW2

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EE 425 Analog Integrated Circuit Design. - Term 231
HW 2 (100pt) due Thursday Sep 28th 11:59 P.M. on Blackboard
Problem 1: Assume all MOSFETs in the three circuits below are in the saturation
region, ignore body effect and assume λ ≠ 0.
a) Calculate the small-signal voltage gain of each circuit in terms of gm and ro
(30pt).
b) Estimate the output resistance for each circuit. (30pt)
c) Assume the supply VDD has some noise ( for example ripple). For circuits
b) and c only find the small signal gain from the supply to Vout (hint: you
need to short Vin to ground). (20pt)
d) For circuits b) and c only suggest a biasing scheme assuming you have
only one ideal current source. (20pt)
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