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Chapter 5:
BJT AC Analysis
Islamic University of Gaza
Dr. Talal Skaik
BJT Transistor Modeling
• A model is an equivalent circuit that represents the AC
characteristics of the transistor.
• A model uses circuit elements that approximate the
behavior of the transistor.
• There are two models commonly used in small signal
AC analysis of a transistor:
– re model
– Hybrid equivalent model
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
2
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
BJT Transistor Modeling
Capacitors chosen with very
small reactance at the frequency
of application → replaced by
low-resistance or short circuit.
Removal of the dc supply and
insertion of the short-circuit
equivalent for the capacitors.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
3
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
BJT Transistor Modeling
Circuit redrawn for smallsignal ac analysis
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
4
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
The re Transistor Model
Zi 
Common Emitter Configuration
V i V be

Ib
Ib
V be  I e re   I c  I b  re    I b  I b  re
    1 I b re
V be    1 I b re
Zi 

    1 re
Ib
Ib
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
 re
Dr. Talal Skaik 2014
5
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
The re Transistor Model
Common Emitter Configuration
26 mV
re 
IE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
6
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
The re Transistor Model
Common Emitter Configuration
I C
1
slope 

V CE r0
V CE
r0 
I C
The output resistance r is
typically in the range of
40 kΩ to 50 kΩ
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
7
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Base Configuration
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
8
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Base
Configuration
The output resistance
r0 is quite high.
typically extend into
the megaohm range.
Common Base re
equivalent circuit
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
9
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common Emitter Fixed Bias Configuration
Common-emitter fixed-bias
configuration.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Network after the removal of the effects
of VCC, C1 and C2.
Dr. Talal Skaik 2014
10
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common Emitter Fixed Bias Configuration
Substituting the re model into the network.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
11
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common Emitter Fixed Bias Configuration
Input impedance:
Z i  R B ||  re
Z i   re R EB  10 re
Output impedance:
Z o  R C || rO
Z o  R C ro  10R C
Voltage gain:
 Vi 
Vi
Vo    I b (R C ||ro ) , I b 
, Vo    
 (R C ||ro )
 re
  re 
Vo
(R C ||ro )
Av 

Vi
re
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
RC
, Av  
re
Dr. Talal Skaik 2014
12
ro 10R C
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common Emitter Fixed Bias Configuration
Av 
Vo
(R ||r )
 C o
Vi
re
Demonstrating the 180°phase shift between input and
output waveforms.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
13
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.1
Determine re, Zi (with ro=∞), Zo (with ro=∞),
Av (with ro=∞).
Repeat with ro=50 kΩ.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
14
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.1 - Solution
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
15
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter
Voltage-Divider Bias
re model requires you to determine , re, and ro.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
16
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter Voltage-Divider Bias
Input impedance:
R   R 1 || R 2
Z i  R  ||  re
Output impedance:
Z o  R C || ro
Z o  R C ro  10R C
Voltage gain:
 Vi 
Vi
Vo    I b (R C ||ro ) , I b 
, Vo    
 (R C ||ro )
 re
  re 
Av 
Vo
(R ||r )
 C o
Vi
re
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
, Av  
Dr. Talal Skaik 2014
17
RC
re
ro 10R C
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.2
Determine re, Zi , Zo (with ro=∞), Av (with
ro=∞). Repeat with ro=50 kΩ.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
18
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.2 - Solution
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
19
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Common-Emitter
Emitter-Bias Configuration
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
20
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations
Input impedance:
V i  I b  re  I e R E
V i  I b  re     1 I b R E
Zb 
Vi
  re     1 R E
Ib
Z b   re   R E    re  R E 
Z b   RE
for R E  re
Output impedance:
Zi  R B ||Zb
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Zo  R C
Dr. Talal Skaik 2014
21
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Gain Calculations
Voltage gain:
Vo  I o RC    I b RC
Vi 
Vo    
 RC
 Zb 
Vo
 RC
Av 

Vi
Zb
substituting Zb   (re  R E )
Av 
Vo
RC

Vi
re  R E
and for the approximation Zb   R E
Av 
Vo
R
 C
Vi
RE
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
22
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.3
Without CE (unbypassed):
Determine re, Zi , Zo , Av . ignore ro for ro ≥ 10(RC+RE)
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
23
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Emitter-Follower Configuration
• This is also known as the common-collector configuration.
• The input is applied to the base and the output is taken from the emitter.
• There is no phase shift between input and output.
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
24
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations
Input impedance:
Zi  R B ||Zb
Zb   re  (  1)R E
Zb   (re  R E )
Zb   R E (for R E >>re )
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
25
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Impedance Calculations
Output impedance:
Vi
Ib 
, Ie =( +1)I b
Zb
Vi
 ( +1)
Zb
( +1)V i
Ie 
 re  (  +1)R E
sin ce ( +1)  
Vi
Ie 
re  R E
To determine Zo , V i is set to zero
Zo  R E ||re ,
Zo  re
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
R E  re
Dr. Talal Skaik 2014
26
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Gain Calculations
Voltage gain:
RE
Vo 
Vi
R E  re
Vo
RE
Av 

Vi R E  re
Vo
Av 
1
Vi
R E  re , R E  re  R E
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
27
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.7
Determine re, Zi , Zo , Av .
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
28
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
Example 5.7 - solution
Electronic Devices and Circuit Theory, 10/e
Robert L. Boylestad and Louis Nashelsky
Dr. Talal Skaik 2014
29
Copyright ©2009 by Pearson Education, Inc.
Upper Saddle River, New Jersey 07458 • All rights reserved.
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