See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/356015490 Insulation Coordination Design for Grid-Connected Solid-State Transformers Article in IEEE Journal of Emerging and Selected Topics in Power Electronics · November 2021 DOI: 10.1109/JESTPE.2021.3125708 CITATIONS READS 6 266 9 authors, including: Chunmeng Xu Jia Wei Georgia Institute of Technology Georgia Institute of Technology 16 PUBLICATIONS 88 CITATIONS 18 PUBLICATIONS 99 CITATIONS SEE PROFILE SEE PROFILE Liran Zheng Maryam Saeedifard Georgia Institute of Technology Georgia Institute of Technology 35 PUBLICATIONS 453 CITATIONS 145 PUBLICATIONS 10,707 CITATIONS SEE PROFILE Some of the authors of this publication are also working on these related projects: Medium-Voltage Current-Source Solid-State Transformer View project Global Asset Monitoring, Management and Analytics (GAMMA) Platform View project All content following this page was uploaded by Chunmeng Xu on 07 December 2021. The user has requested enhancement of the downloaded file. SEE PROFILE > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 1 Insulation Coordination Design for GridConnected Solid-State Transformers Chunmeng Xu, Member, IEEE, Jia Wei, Member, IEEE, Liran Zheng, Member, IEEE, Xiangyu Han, Member, IEEE, Maryam Saeedifard, Senior Member, IEEE, Rajendra Prasad Kandula, Member, IEEE, Karthik Kandasamy, Member, IEEE, Deepak Divan, Life Fellow, IEEE, Lukas Graber, Senior Member, IEEE Abstract—The deployment of solid-state transformers (SSTs) in medium-voltage distribution systems is facing various challenges, especially the challenge of insulation coordination design against grid-originated lightning impulses. In this paper, two challenges in existing insulation coordination designs for grid-connected SSTs are identified. One challenge is the mismatch between metal-oxide varistor (MOV) protective levels and SST insulation strength, the other challenge is the incompatibility of standard impulse test on SST protective structures. To address the MOV selection challenge, a novel lightning protection scheme is designed to protect a single-stage SST where the semiconductor modules are directly exposed to external lightning impulses. The in-lab lightning impulse tests are performed to verify the overvoltage attenuation performance of the prototyped lightning protection scheme. To address the impulse test challenge, the surge withstand capability of the protected SST is comprehensively evaluated with a complete set of insulation coordination design procedures beyond the BIL test. After these two challenges are addressed, a discussion is presented on substituting conventional transformers with the protected SSTs into insulation-coordinated distribution systems to facilitate the field deployment of SSTs. Index Terms—Basic insulation level (BIL), energy router, medium-frequency transformer (MFT), metal oxide varistor (MOV), power electronic transformer (PET), solid-state transformer (SST). I. INTRODUCTION S OLID-STATE transformers (SSTs) provide a promising solution to achieve voltage transformations in a compact and flexible manner [1, 2]. Recent advancements in power semiconductor devices have expedited the deployments of these power electronic transformers (PETs) in medium-voltage (MV) distribution-level grids [3, 4]. Multiple SST and PET prototypes are targeting to replace their line-frequency transformer (LFT) counterparts for increased flexibility and controllability in MV systems [5-8]. Nevertheless, several practical challenges currently exist for large-scale field deployments of SSTs [2, 9]. A major deployment challenge for grid-connected SSTs is 1 Manuscript received July 31, 2021; revised September 26, 2021; accepted Oct 16, 2021. Date of publication XX XX, XXXX; date of current version XX XX, XXXX. The information, data, or work presented herein was funded by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department the fault protection [6, 10]. As illustrated in Fig. 1, various types of faults can happen to a grid-connected SST and numerous strategies have been proposed to protect SSTs under these fault conditions [11-13]. The SSTs can maintain operations under single phase to ground faults [14] and overload conditions [15] on the load side or the lowvoltage (LV) side. The SSTs can also detect and mitigate their internal faults like open-circuit faults [16, 17] and short-circuit faults [18]. However, the SST protection against grid-side or medium-voltage (MV) side faults is less studied in literature. The overcurrent surges brought by ground faults can be interrupted with circuit breakers or get limited by the SST itself [19]. Comparatively, the overvoltage impulses are more challenging to be handled by SSTs which are constructed with voltage-sensitive semiconductor devices [20]. Although multiple studies in literature have chosen overvoltage suppressors like metal-oxide varistors (MOVs) to attenuate lightning and switching impulses [10, 11, 21], their analyses on MOVs are lack of experimental verification and thus neglecting many real-world phenomena of MOVs. Moreover, the existing studies on SST insulation designs focus primarily on the medium-frequency transformers (MFTs) [22, 23] without considering the grid-front semiconductor modules. As illustrated in Fig. 1, the grid-front semiconductor devices are exposed to the external surges before the isolation MFT in an SST. If the grid-front semiconductor devices fail under a lightning event, the overall SST becomes malfunctional no matter whether the isolation MFT has a qualified basic lightning impulse insulation level (BIL) or not. As of now, there is no study focusing on the lightning protection scheme to help the overall SST pass the lightning impulse tests. Therefore, the challenges of insulation coordination designs for SSTs have not been fully addressed in literature yet. In this paper, two knowledge gaps are identified in the SST insulation coordination designs: one is the mismatch between the MOV protective levels and the SST insulation strength that may cause breakdown damages in SSTs; the other is the incompatibility of standard impulse test procedures on SST protective structures that may fail to provide BIL ratings for of Energy, under Award Number DE-AR0000899 in the CIRCUITS program monitored by Dr. Isik Kizilyalli. (Corresponding author: Chunmeng Xu.) The authors are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA (email: chunmengxu@gatech.edu) > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < Grid (MV) Side Inside Solid-State Transformer Load (LV) Side (a) π LFT 6 1 2 3 4 2 Grid-originated: 1. Lightning impulse 2. Ground fault 3. Switching impulse Inside converter: 4. Internal fault Load-side: 5. Overload 6. Short circuit Fig. 1. The typical faults that may happen to a grid-connected single-phase SST. The illustrated SST topology is a 7.2 kV three-port single-stage modular soft-switching SST (M-S4T) as reported in [24]. SSTs. To tackle the first challenge, a novel lightning protection scheme (LPS) is constructed to provide sufficiently low protective levels under lightning impulses. To tackle the second challenge, this study discusses how to comprehensively evaluate the surge withstand capability of an LPS-protectedSST without a standard-defined BIL rating. A flowchart of insulation coordination design for SSTs is generalized in this paper and a guideline on substituting LFTs with SSTs in insulation-coordinated distribution systems is proposed. To the author’s knowledge, it is the first time in literature that the insulation coordination designs for SSTs are verified with the experimental results of lightning impulse tests. The rest of the paper is organized as follows. Section II identifies the two challenges in SST insulation coordination designs. Section III mitigates the first MOV selection challenge by proposing a new LPS circuit for a 7.2 kV SST with parameter design principles and frequency-dependent models. Section IV validates the overvoltage attenuation performance of the LPS prototype through in-lab lightning impulse tests. Section V tackles the second impulse test challenge by proposing a new set of insulation coordination design procedures for SSTs. Section VI concludes the paper. II. CHALLENGES IN INSULATION COORDINATION FOR SSTS A. Standard Impulse Tests and BIL Ratings for LFTs Insulation coordination, by its definition, refers to the selection of the equipment insulation strength that is consistent with the estimated external voltage stresses to obtain an acceptable risk of failure [25]. A widely accepted parameter to represent the standardized insulation strength of LFTs is the BIL rating [26, 27]. According to the IEEE Std. C57.98 [26], the BIL ratings of LFTs should be determined through impulse tests with a full-wave lightning impulse. This full-wave lightning impulse resembles a lightning disturbance that travels along the transmission line before reaching a transformer [26]. The voltage of a full-wave lightning impulse should rise from zero to its crest value in 1.2 μs and then decay to half of its crest value at 50 μs, so that it is generally referred to as the 1.2/50 μs lightning impulse in literature [28]. Inductive filter (magnetic core) Impulse generator 5 πΏ π (b) π MOV π π π SST π π Fig. 2. (a) A standard impulse test circuit for an LFT and (b) a common configuration with an impulse generator, a MOV, a grid-front filter and an SST in the lightning impulse protection studies of [11, 21]. The impulse generator circuit in Fig. 2 could generate the standard 1.2/50 μs lightning impulse vLI at its output [29]. When performing impulse tests on an LFT, the terminals of the LFT are directly connected to the output of the impulse generator, so that the same vLI can be measured from the LFT terminal as illustrated in Fig. 2(a). For a 7.2 kV LFT under test, if the LFT terminals do not exhibit any disruptive discharge that distorts the vLI until 95 kV peak, the impulse test is considered as passed and a 95 kV BIL rating is assigned to the LFT. On the other hand, if the terminal-to-terminal insulation of this 7.2 kV LFT fails before the 95 kV peak, the LFT terminal voltage will collapse and the standard 1.2/50 μs waveshape is no longer maintained. In short, the LFT impulse test codes [26] require that a 1.2/50 μs lightning impulse must be measured from the LFT terminal in order to determine the BIL rating of the LFT under test. B. MOV Selection and Impulse Test Challenges for SSTs The first challenge on SST insulation coordination designs happens when the breakdown voltage Vbr of an SST is even lower than the maximum protective level VPL,max of a MOV. In this study, the 7.2 kV SST to be protected has its Vbr at 15 kV. The 15 kV is a conservatively estimated value on the insulation strength of five cascaded submodules in this SST, because each submodule is constructed with 3.3 kV SiC MOSFETs [30]. After adding a 10% voltage margin from the theoretically maximum insulation strength of five cascaded submodules at 16.5 kV, the assumed breakdown voltage of this 7.2 kV SST is 15 kV or approximately 2 pu (the per-unit base is the SST system voltage Vs). On the other side, the protective levels VPL (also known as clamping voltage) of distribution-class MOVs are proportional to their maximum continuous operating voltage VM [31]. The ratio of protective level VPL/VM is at least 2.32 ~ 2.48 under front-of-wave (FOW) overvoltage surges, or 2.1 ~ 2.2 under 8/20 μs current impulse, or 1.7 ~ 1.85 under switching impulse [32]. If choosing the VM of a MOV as equal to the Vs of an SST according to the IEEE Std. C62.22 [32], the maximum protective level VPL,max of the selected MOV during overvoltage-clamping processes can be approximated as: πππΏ,πππ₯ ≥ πΎπΉππ ππ = πΎπΉππ ππ ≈ 2.4ππ (1) > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < Voltage AC (a) DC AC bus xfmr valve Converter DC bus arrester winding unit DC bus arrester arrester arrester Breakdown of power modules (without MOV) – “BROKEN” , Smoothing reactor arrester LFT , standard 1.2/50μs lightning impulse in LFT BIL tests – “PASS” 3 DC cable arrester MFT , discharge waveform of MOV – “CLAMPED” AC (b) DC AC bus arrester Time [μs] DC LCL filter arrester AC AC DC-link capacitor DC Dual active bridge MFT Fig. 3. Comparison on the standard lightning impulse vLI from LFT impulse tests (peaks at BIL rating VBIL), a broken-down SST’s voltage waveform under lightning impulse test with MOV protections (peaks at the breakdown voltage Vbr of the SST), and a MOV-clamped voltage vmov under lightning impulse test for the MOV-protected-SST (peaks at maximum protective level VPL,max of the MOV). where KFOW is the ratio of protective level under the FOW overvoltage surges, the “worst-case scenario” of overvoltage protection. In reality, most commercial MOVs have much higher values of KFOW, like 3.65 for MOVs used in [11] and 4.4 for MOVs selected in this study. For adhering to the industrial standards, an average value of KFOW = 2.4 within the standarddefined range of 2.32 – 2.48 [32] is used in the following discussions. According to (1), if an SST has a breakdown voltage Vbr being less than 2.4 times of its system voltage Vs, this SST is subject to the overvoltage damages brought by a parallelconnected MOV. For the 7.2 kV SST with a Vbr of 15 kV in this study, it will be damaged by a 7.2 kV-rated MOV in the circuit of Fig. 2(b) due to the following voltage relationship: πππΏ,πππ₯ ≈ 2.4ππ > 2ππ ≈ πππ (2) In short, this mismatch between SST insulation strength and MOV protective levels constitutes the MOV selection challenge for SST insulation coordination designs. In order to tackle this MOV selection challenge, a customized lightning protection scheme (LPS) is proposed for the 7.2 kV SST in Section III and then tested with a lightning impulse generator in Section IV in this paper. The second challenge on SSTs insulation coordination designs comes from the conflicts among the LFT-compatible impulse test standards, the BIL rating, and the surge withstand capabilities of SSTs. As introduced above, a 7.2 kV LFT needs to pass the standard impulse tests to obtain a 95 kV BIL rating. Noteworthy to mention, the standard requires the LFT to be tested without any surge arrester in the circuit as Fig. 2(a). In contrast, it is almost impossible for a 7.2 kV SST to survive a 95 kV impulse without any protective device in the circuit, considering the breakdown voltage of SST semiconductor modules is normally 1.5 ~ 2.5 times of the continuous operating voltage [9]. A broken-down SST will exhibit a “front-chopped” voltage waveform (“BROKEN” curve in Fig. 3) with vigorous short-circuit phenomena like overheating and sparking. After MOVs and filters are included in the SST impulse test circuit like Fig. 2(b), these surge suppressors will also clamp down the (c) Current Source Inverter Lightning Protection Scheme LC filter Current Source Inverter or M-S4T DC-link inductor Fig. 4. (a) Typical HVDC converter station topology (single-phase equivalent circuit) provided in IEC60071-5 with suggested arrester locations [33]; (b) Typical three-stage voltage-source SST topology with AC-side arrester location reported in literature [10, 34]; (c) the single-stage, current-source MS4T with the LPS protection proposed in this paper. original 1.2/50 μs waveshape (“CLAMPED” curve in Fig. 3) through resistive dissipation based on the V-I characteristics of surge suppressors. Although the “surviving SST” scenario (“CLAMPED” curve) is still distinguishable from the “broken-down SST” scenario (“BROKEN” curve) in Fig. 3, neither of them qualifies as the desired 1.2/50 μs waveform to pass a successful lightning impulse test according to [26]. If the clamped vmov is measured from an SST impulse test, the LFT test codes will consider the SST as “failed” because the original 1.2/50 μs waveshape has been distorted. As a result, a BIL rating cannot be assigned to a “failed” SST test, although this SST has survived the 95 kV lightning impulse with its protective devices. Without a testconfirmed BIL rating, the 7.2 kV SST is not accepted by industrial standards to replace a 7.2 kV LFT into an insulationcoordinated distribution system. This is the direct consequence caused by the impulse test challenge for SSTs. This impulse test challenge will be discussed further in Section IV and Section V in this paper. C. Comparison with existing studies Prior to this study, there have been mainly three categories of insulation coordination studies on power converters. The first category is the system-level coordination of withstand voltage in HVDC converter stations that has been standardized by IEC 60071-5 and lEC 60099-9 [33, 35, 36]. The second category is the component-level coordination of protective levels between the SST and the surge protection devices [34, 37, 38]. The third category is the structure-level coordination of dielectric strength, clearance and creepage among insulation layers within the power converters [39, 40]. In this study, the discussions on the MOV selection challenge provide the first publicly-available lightning impulse test results among the component-level coordination studies in SSTs. The discussions on the impulse test challenge evaluate the feasibility of BIL tests on SSTs for the first time in literature. Comparatively, the BIL tests for HVDC converters are not > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < considered in their insulation coordination designs due to the existence of winding-based converter transformers at the AC grid interface. By referring to the general standards with LFTs (i.e., IEEE Std C62.82.1 [25] and IEC 60071-1 [41]) instead of the specialized ones with converters (i.e., IEC 60071-5 [33]), this study actually sets a higher goal for insulation coordination designs in SSTs than most other power converters. This is the unique motivation and the main innovation of this study, which reflects the practical challenges for SSTs to be deployed in conventional AC distribution systems. Comparatively, the single-stage current-source M-S4T topology being protected in this study requires the highest level of overvoltage surge protection as compared to the IECstandard HVDC station topology or the common three-stage SSTs. As illustrated in Fig. 4(a), the AC-DC converter in an HVDC station has no direct exposure to the external surges because it is bounded by the inductance of converter transformer, the smoothing reactor, and the DC-link capacitor [33]. In this way, the requirements of surge withstand capabilities in HVDC converters are much lower than the surge capabilities in converter transformers. As illustrated in Fig. 4(b), the dual active bridge in three-stage voltage-source SSTs is interfaced by a DC-link capacitor, a rectifier, and a LCL filter to the grid-front MOV [10, 34, 42]. Different from the HVDC station topology or the three-stage voltage-source SSTs, the semiconductor devices in the M-S4T prototype are more exposed to external disturbances. As illustrated in Fig. 4(c), the grid-originated overvoltage surges will reach the SiC MOSFETs right after the input LC filter, which makes the overvoltage attenuation in this single-stage MS4T much more challenging than the protections for HVDC converters or three-stage SSTs. Moreover, the input capacitive filter in this current-source M-S4T cannot provide the same degree of overvoltage attenuation as the DC-link capacitor in voltage-source converters. In a sense, this M-S4T topology becomes the “worst-case scenario” for SST protections and thus it is selected as the case study in this paper. III. LIGHTNING PROTECTION SCHEME A. SST Topology The SST to be protected in this study is a 7.2 kV, 50 kVA single-phase single-stage M-S4T with the prototype photo shown in Fig. 5 and the submodule topology shown in Fig. 6 [43]. The MV-side SiC MOSFETs used in the 7.2 kV MS4T prototype are customized modules with 3.3 kV rating and reverse-blocking features [30]. This M-S4T topology allows modular cascading with five submodules and the bidirectional power flow according to [8]. The M-S4T utilizes the singlestage current-source topology without AC-DC rectifier or DCAC inverter at the grid-front interface. Compared to three-stage SST topologies, this single-stage M-S4T topology offers higher efficiency, higher power density and lower electromagnetic interference [43]. Besides the semiconductor devices, the MV-side LC filter is also a vital component that should be protected by the LPS under lightning impulses. In the M-S4T prototype, the filtering 4 LV MV HF bridge xfmr bridge Front view Back view Fig. 5. Photo of the 7.2 kV M-S4T prototype [24]. One S4T submodule Lightning Protection Scheme (LPS) vsst MV filter MV bridge HF xfmr LV bridge LV filter Fig. 6. Schematic of the S4T-LPS insulation coordination with the submodule topology of the 7.2 kV M-S4T. capacitance Cf is chosen for clamping the peak-to-peak voltage ripple around 10% [24]. For suppressing the surge currents into the M-S4T, a filtering inductor Lf with parasitic resistance of Rf is used as shown in Fig. 7. This surge-suppressing air-core inductor is a separate component from the ripple-reducing magnetic-core inductor as illustrated in Fig. 6. Because the magnetic-core inductor is rated at only 7 A (50 kVA by 7.2 kV), its magnetic core will easily get saturated under hundreds of amperes of surge currents during lightning impulse tests. Therefore, a separate surge-suppressing inductor is designed to have an air core for the anti-saturation purpose, and its optimal inductance will be determined in the next section. In this paper, the LPS circuit is designed independently from the M-S4T internal structure as long as the M-S4T input voltage was kept below Vbr during the lightning impulse tests. The remaining discussions of stress propagations and voltage balancing problems inside the M-S4T structure belong to the regime of converter internal faults, which have been studied in [10, 44] and are not the focus of this paper. B. LPS Design Principles and Parameter Selections The design principles of the LPS circuits are presented in this section. Fig. 7 illustrates the single-layer structure of an LPS with its on-state equivalent circuit. The major task of LPS design is to select an appropriate VM value of the MOV so that the maximum voltage over the M-S4T input VSST,max is less than the breakdown limit of M-S4T (VSST,max < Vbr) during lightning impulse tests. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < LM0 Impulse generator A0 A1 (b) Fig. 7. (a) A single-layer structure of LPS with a MOV, a switch or spark gap to isolate the MOV under nominal voltage, and the LC filter of the S4T; (b) is the equivalent circuit of single-layer LPS during impulse tests for MOV parameter selections. L1 SW M1 L2 M2 Cf Fig. 8. Proposed LPS circuit with two layers of MOVs and inductors. To find the maximum voltage over the M-S4T input during impulse tests, assuming the MOV can be simplified as a step voltage source with the step level of VPL,max during the current discharging process like the vmov in Fig. 4. In Fig. 7(b), the voltage over Cf can be derived as: πΌ = πππΏ,πππ₯ [1 − (πππ π + π π π ) π −πΌ ] (3) π π π where πΌ = π /2πΏπ . Assuming the parasitic resistance Rf of aircore inductor Lf is negligible, the vsst expression can be simplified with π → 0, πΌ → 0: ≈ πππΏ,πππ₯ [1 − πππ π ] (4) The maximum voltage over the M-S4T filtering capacitor VSST,max should be kept below Vbr to avoid any damage to the MS4T as expressed in (5). Additionally, the VSST,max is proportional to the maximum protective level VPL,max of MOV: ππππ,πππ₯ = 2πππΏ,πππ₯ = 2πΎπΉππ ππ ≤ πππ (5) Therefore, the selection criterion of MOV rating VM so as to stay below the M-S4T insulation strength Vbr is: ππ ≤ RM1 CM = (a) π π S1 RM0 , MOV Impulse generator LM1 S0 Switch (or spark gap) 5 1 πΎππ 1 2 π = 7.2 = 3 ππ 2 πΎπΉππ π 2 2.4 (6) where Kbr is the ratio between M-S4T breakdown voltage Vbr and M-S4T rated voltage Vs, that is, πΎππ = πππ /ππ . Considering the πΎππ ≈ 2, πΎπΉππ ≈ 2.4 and ππ = 7.2 kV, the upper limit of MOV rated voltage is 3 kV according to (6). Referring to the IEEE Std. C62.22 [32], the closed VM rating below 3 kV is 2.55 kV. Therefore, a 2.55 kV-rated MOV is selected for the proposed LPS circuit to substitute the 7.2 kV-rated MOV that is discussed in Section II.B. However, the biggest problem of installing a 2.55 kV-rated MOV in parallel to a 7.2 kV-rated M-S4T is the unwanted Fig. 9. Frequency-dependent model of the gapped MOV used in LPS simulation. current conduction under the system voltage. A 2.55 kV-rated MOV can discharge as large as 5 kA under the 10.2 kV system peak voltage [32]. In order to disconnect the 2.55 kV-rated MOV from the 7.2 kV system voltage under M-S4T normal operations, an actively-switching power module or a passivelyswitching spark gap must be connected in series with the MOV like Fig. 7(a). The switch or the spark gap in Fig. 7(a) will inevitably bring the switching-on delays in the MOV operations and the overvoltage rise in vsst. A solution to minimize the overvoltage rise during switching-on delays is to add another layer of MOV in the LPS circuit like Fig. 8. The newly-added MOV M1 should withstand the 7.2 kV system voltage by itself (ππ ≥ 7.2 kV). When a lightning impulse comes, the M1 can act immediately and clamp the overvoltage to an intermediate level, such as 35 kV when using a 7.65 kV-rated MOV [32]. Next, the M2 (a 2.55 kV-rated MOV) starts conducting after the switching-on delay and further attenuates the overvoltage below 15 kV. The inter-MOV inductor L1 will take the voltage difference between M1 and M2, and then the input filtering inductor L2 will further suppress the surge current and reduce the overvoltage from M2 to Cf. The inductances of air-core inductors L1 and L2 are selected to balance the current sharing between the two MOVs. The lower-voltage-rated M2 has a lower resistance to naturally discharge more current during the parallel conduction of M1 and M2. Also, the M2 has a lower energy rating because the energy rating of a MOV is proportional to its VM value [31]. Collectively, the M2 has a higher possibility of failure than M1 if the current sharing is uncontrolled. In order to determine the minimal inductance of L1 and L2 that achieves the proper current sharing among two MOVs, a frequency-dependent model of LPS circuit is built to comprehensively represent the MOV behaviors, especially the steep front effect that leads to the high protective levels of MOVs in real-world scenarios. C. Frequency Modeling and LPS Simulation Improved from the traditional approach of modeling MOVs as nonlinear resistors, the frequency-dependent model of MOVs can better capture the steep front effect that causes a higher protective level at a steeper-front surge [32, 45]. In this paper, the comprehensive model of gapped MOVs is proposed to include the switch (or spark gap) in series with the M2 as shown in Fig. 9. This model demonstrates the steep front effect by directing the current flowing through two nonlinear resistors A0 and A1 with regards to the front time of input surges. The > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 6 more current flowing into A0 at a steeper-front surge will cause a higher protective level of the overall MOV, because A0 exhibits a higher voltage drop at a given current than A1 according to (7) and (8) below: ππ΄0 = ππππ / 4.96 πΌπ΄ 1.284 × ( 0 ) πΌπππ , πΌπ΄0 < 3400 π΄ πΌπ΄ 0.7836 × ( 0 ) πΌπππ { (7) / 0. 6 , πΌπ΄0 > 3400 π΄ 50 ππ΄1 πΌπ΄ = 0.9596 × ( 1 ) ππππ πΌπππ (8) where ππππ = πππΏ, 0ππ΄ /1.6. The VPL,10kA is the MOV protective levels measured under 10 kA-peak current impulse in standard 8/20 μs waveshape. The πΌπππ is selected as 1 A. The threshold value of 3400 A is determined through curve-fitting to the V-I characteristics of A0 and A1 as given in IEEE Std. C62.22 [32]. Besides the nonlinear components A0 and A1, the remaining components in Fig. 9 represent the parasitics in a gapped MOV. As suggested by [31], these parasitics are computed as follows: πΏM0 = 0.2 πΏM π = 15 [μH]; π π [μH]; π M M0 = 100 π = 65 [Ω]; π 150 / 9. π π [Ω] π π = 100 [pF] π Fig. 10. Simulated current sharing among two MOVs of LPS circuit with different inductance values of air-core inductors. These curves are used as the parameter selection guidance for air-core inductors in the LPS circuit. Lower-rated, Gapped MOV Voltage [pu] (i) Spark gap V-I curve 1.7 [10 kA, 1.4 pu] 1.4 IV. LIGHTNING IMPULSE TESTS A. LPS Prototype for the M-S4T One difficulty of prototyping the proposed LPS circuit is to implement the switch in the M2 branch. Using an active switch [40 kA, 1.8 pu] [20 kA, 1.6 pu] (iii) V-I curve of a gapped MOV (9) where d is the height of MOV in meters and n is the number of parallel columns of metal-oxide stack in the MOV. As reported in [46], the selected M2 for M-S4T protection has a VM of 2.55 kV, a VPL,10kA value of 10.2 kV and a turning-on threshold voltage of 12 kV. The selected M1 has a VM of 12.7 kV and a VPL,10kA value of 38.5 kV. The reason for choosing a higher-rated M1 is to get a higher energy rating in M1. Meanwhile, as the LPS output voltage is determined by the protective levels of M2, increasing the VM1 from 1.0 pu (7.65 kV) to 1.7 pu (12.7 kV) will only change the LPS output voltage slightly by 2.3% according to simulation results. The current sharing between two MOVs is simulated with the inductance of L1 and L2 being swept from 1 μH to 1 mH under the impulse test settings in Fig. 10. According to Fig. 10, when the inter-MOV inductance is close to 1 μH, it is mainly the M2 that discharge the surge current from the impulse generator and the peak current through M2 hits as high as 1800 A. By increasing the inductance value, more current is deviated from the M2 to flow through the M1. The crossover point of current sharing happens at the inductance of 50 μH. At an inductance of 150 μH, the peak current discharged by M1 is about two times of the peak current discharged through M2, which matches up with the ideal VM ratios of two MOVs. Therefore, an inductance value of 150 μH is selected for the optimal current sharing between two MOVs in the LPS prototype. (ii) ZnO stack V-I curve Sparkover region Discharge Current (log scale) 0.35 MCOV 1 mA 10 kA Fig. 11. Illustrative V-I curve of the lower-rated gapped MOV M2 (VM = 2.55 kV) used in the LPS prototype [32, 47]. The per-unit base is the MS4T rating (also the system voltage) of 7.2 kV. gives very high controllability but quite low reliability, because the switch auxiliary components like gate drivers need the same surge withstand capability to survive the impulse tests. The other solution is to use passive switches like spark gaps with high voltage ratings [32]. Cascading a spark gap with a gapless metal-oxide (mostly zinc-oxide, ZnO) stack constitutes a seriesgapped MOV, which is the selected product for the LPS prototype in this study. The working principle of a series-gapped MOV is shown in Fig. 11. The illustrated MOV is the 2.55 kV-rated M2. Different from a gapless MOV with a continuous V-I curve as shown in the curve (ii) of Fig. 11, a gapped MOV has a discontinuity in its V-I curve that is caused by the sparkover event inside its spark gap. This sparkover event switches the V-I curve of M2 from the spark gap path (curve (i)) to the ZnO stack path (curve (ii)) with physically determined switching-on delays. In this way, the M2 can safely withstand the 7.2 kV system voltage following the spark gap curve (curve (i)) when its applied voltage is below 1.7 pu or 12 kV (“OFF” state). The M2 can also provide very low clamped voltage in current discharging processes following the ZnO stack curve (curve (ii)) when its applied voltage rises above 1.7 pu or 12 kV (“ON” state) [46]. The resulted V-I curve of M2 is shown as curve (iii) in Fig. 11. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 7 0.35 m L1 M1 M2 L2 1.0 m Fig. 14. Measured 1.2/50 μs lightning impulse with 90 kV peak under the noload condition of the impulse generator. 1.0 m Cf Mf VM1 VLI Fig. 12. Constructed LPS prototype with gapped MOVs, air-core inductors, and the M-S4T capacitive filter [46]. Impulse generator IM1 Voltage divider ILI VM1 Grounding tapes LPS Prototype Current sensor SST input filter Fig. 13. Lightning impulse test setup with the LPS prototype and the capacitive filter of M-S4T [46]. A constructed LPS prototype for M-S4T protection is shown in Fig. 12. In the LPS prototype, M1 has a VM value of 12.7 kV and M2 has a VM value of 2.55 kV [47]. Both MOVs come from Eaton® UltraSILTM series which have proprietary insulation ceramic ring assemblies functioning as the spark gaps. Improved from the concept circuit of Fig. 7, the M1 selected for the LPS prototype is also a gapped MOV like M2 to evaluate the LPS performance under the worst-case scenario. That is, the M1 also has a switching-on delay that may increase the LPS output voltage during impulse tests. The air-core inductors, L1 and L2, have the inductance of 152 μH and the parasitic capacitance of 8.83 pF [46]. They are wound with 30 kV-rated power cables to avoid insulation failures during lightning impulse tests. The capacitive filter of M-S4T is constituted by five pairs of 4.5 μF capacitors with electronic-grade, gapless MOVs as backup protection. The constructed LPS prototype has the most conservative creepage and clearance design and thus its form factor has not been optimized yet. B. Lightning Impulse Test Setup In the test setup shown in Fig. 13, an impulse generator was used to generate a 90 kV-peak standard lightning impulse like Fig. 14 when the LPS prototype was not connected to the impulse generator. The Fig. 15(a) shows this no-load condition of the impulse generator. In order to demonstrate the voltage attenuation progressively over the LPS prototype, its three IM1 ILPS (b) (a) (c) VM1 VM2 Vf IM2 ILPS,f (d) If Fig. 15. Lightning impulse test circuit to demonstrate the progressive overvoltage attenuation over the LPS prototype: (a) Test 1 – no-load condition, (b) Test 2 – M1 was connected, (c) Test 3 – M1 and M2 were connected, (d) Test 4 – M1, M2, and the input capacitive filter of M-S4T was connected and the final output of LPS was measured [46]. branches were introduced into the impulse test circuit one after another as in circuits shown from Fig. 15(b) to Fig. 15(d). More details about the lightning impulse test setup can be found in [46]. C. Test Results The lightning impulse test results have demonstrated the layer-by-layer overvoltage attenuation throughout the LPS prototype as illustrated in Fig. 16. As shown in Fig. 16(a), the standard 1.2/50 μs lightning impulse with 90 kV generated in Test 1 (Fig. 15(a)) was frontchopped by the M1 at 48 kV and then maintained around 20 kV for several microseconds in Test 3 (Fig. 15(c)). Even though the sparkover delay was 0.5 μs and the voltage clamping duration was less than 5 μs, both the 48 kV sparkover voltage and the 20 kV discharge voltage of the M1 could have destroyed the downstream M-S4T if the M1 were used alone. This experimental observation had confirmed the dangers of using a single MOV to protect the M-S4T as discussed in Section II. At almost the same time that the M1 turned on, the M2 sparked over at 15 kV (0.3 μs of sparkover delay) and then quickly transited to a discharge voltage around 6.5 kV. The VM1 stayed at 6.5 kV for an long period of time (i.e., 50 μs) with > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 8 (a) (a) Sparkover − Nonlinear conduction through ZnO stack − − − . (b) (b) − Matched ππ, πππ (2% error) − − − Fig. 16. Experimental (a) voltage waveforms and (b) current waveforms from lightning impulse tests with different subcircuits of LPS prototype connected to the impulse generator. negligible decreases in its magnitude, which confirmed the theoretical approach to use a step voltage source for presenting the VM in Fig. 7. With an almost-flat 6.5 kV discharge voltage over M2 for the first 50 μs, the LC oscillation at the M-S4T filter side generated a peak voltage of 13 kV, which was two times of the 6.5 kV discharge voltage as predicted in (5). Also, the LC oscillation helped to attenuate the sparkover noises that slightly overrode the 15 kV limit in VM2. The final output voltage of the LPS prototype, Vf, kept its voltage magnitude within 15 kV to avoid damaging the downstream M-S4T as illustrated in Fig. 16(a). In Fig. 16(b), the peak current through VM1 was about 2 times of the peak current flowing through VM2, which matched up with the simulated current sharing under πΏ = 150 μH in Fig. 10. The measured current waveforms in Fig. 16(b) also illustrated how the MOVs clamped the overvoltage surges from the impulse generator by discharging a large current to the ground. The measured no-load output current of an impulse generator ILI was only a few amps in Test 1 (Fig. 15(a)). In this way, the 300 J pre-charged energy in the impulse generator (within C1 of Fig. 2) was outputted in the 1.2/50 μs standard waveshape with 90 kV output voltage and negligible output current. To the opposite, after connecting the MOVs in Test 2 to Test 4 (Fig. 15 (b) to (d)), the same 300 J pre-charged energy in the impulse generator was discharged through a large output current and a reduced output voltage, like VM1 and IM1 compared to VLI and ILI. If taking the flag of failure as the “chopped output voltage and boosted ground current” during impulse tests according to the IEEE Std. C57.98 [26], the LPS would automatically be Fig. 17. Verification of the frequency-dependent model of LPS prototype with references to experimental (a) π voltage and (b) M-S4T capacitive filter voltage (equivalently the πππ ). considered as “failed” the impulse tests despite no insulation failure had ever occurred in the LPS. If the M-S4T prototype were connected with the LPS under the impulse test, the LPSprotected-S4T would also be considered as “failed” the test according to existing LFT standards. This conflict between standard-defined test protocols and in-lab SST test phenomena illustrated the “impulse test challenge for SSTs” as mentioned in Section II.B. To tackle this challenge, new procedures of insulation coordination designs for SSTs without using a conventional BIL rating will be proposed in the next chapter. D. Discussions The frequency-dependent model of the LPS circuit constructed in Section III.C can be verified with the impulse test results. Fig. 17 presents the comparisons between the impulse test results and the simulated waveforms when the LPS is connected with the capacitive filter of M-S4T as in Fig. 15(d). It can be found that the simulated waveforms match closely with the lightning impulse test results. The simulated peak voltage at M-S4T capacitive filter Vf is 13.2 kV, which stays within 2% error range from the measured Vf of 13.0 kV. Therefore, the accuracy of the frequency-dependent model for the LPS prototype has been verified accordingly. V. INSULATION COORDINATION DESIGN FOR SSTS In the previous sections, the LPS prototype has been designed, constructed and tested in lightning impulse test. However, even if the LPS-protected-S4T can survive the lightning impulse tests that had 90 kV-peak 1.2/50 μs impulse at no-load condition, neither the LPS prototype nor the LPSprotected-S4T could be assigned a BIL rating of 90 kV. Because the 90 kV-peak 1.2/50 μs waveshape got inevitably distorted by the LPS in the test circuit. Without a 1.2/50 μs voltage waveform being measured from the device under test, > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < BIL rating of LFT 5 (1) External voltage stresses 4 LINE- FREQ XFMR PART 1 Voltage [pu] (2) Insulation strength of LFT PART 2 1 Fast-front overvoltage Lightning μs range Slow-front overvoltage Switching μs to ms range Temporary overvoltage s to min range B2. Select submodule w/ breakdown voltage Vb B1. Select LFT 2 (4) Protective levels of (5) Protective levels of LPS surge arrester SOLID-STATE XFMR A. Select external stress like: Lightning impulse (1.2/50 μs voltage wave) 3 (3) Range of Insulation Strength of SSTs Time Duration Continuous operating voltage PART 4 C1. Perform 1.2/50 μs lightning impulse tests onto the LFT C2. Find number of cascading submodule N D1. Measure BIL rating of LFT D2. Calculate breakdown voltage of SST: × ππ E1. Select MOV E2. Design LPS F1. Read protective levels of the MOV from its datasheet F2.1 Build frequency dependent model of LPS F2.1 Measure lightning impulse protective level of LPS by 1.2/50 μs test NO END A. Insulation Coordination Design Flowchart for SSTs In its fundamental form, the process of insulation coordination design for power equipment is a comparison between the external voltage stress and the internal insulation strength as illustrated in Fig. 18 [25, 27, 51]. The criteria of insulation coordination design are that if the external stress overwhelms the insulation strength, proper surge protective devices like MOVs should be installed to attenuate the external stress [27, 52]. For example, the external lightning impulse and switching impulse stresses in Fig. 18 (curve (1)) are possibly higher than the insulation strength of an LFT (curve (2)). In this case, a MOV is needed to clamp down the external stress to its protective levels (curve (4)), which constantly stay lower than the insulation strength of the LFT (curve (2)). Similarly, the insulation coordination design criteria for SSTs require the LPS to provide sufficiently low protective levels after clamping down the same external stress (curve (5)), especially under fastfront overvoltage region like the lightning impulses. The step-by-step flowchart in Fig. 19 shows both insulation coordination design processes: one is for LFTs as defined in the industrial standards and the other is for SSTs as proposed in this paper. The insulation coordination design process for LFTs is a standard approach generalized from IEEE standards and IEC PART 3 Fig. 18. Illustration of insulation coordination design criteria for LFTs and SSTs to survive different types of overvoltage surges. the BIL rating cannot be calibrated, and the surge withstand capability of LPS-protected-S4T cannot get represented by the BIL rating. Therefore, it is neither logical nor possible to use the same LFT standards for impulse test on SSTs or any other power electronic converter serving both “transformer” and “converter” functions. In this section, a new insulation design flowchart is proposed to evaluate the lightning impulse withstand capabilities of the LPS-protected-SSTs without a BIL rating. This flowchart supports the future insulation coordination design procedures for SSTs. Also, the considerations of substituting LFTs with LPS-protected-SSTs in the insulation-coordinated distribution systems will be preliminarily discussed in this section. 9 G1. Evaluate protective ratios of LFT-MOV coordination by empirical equations as provided in standards G2. Calculate protective ratios of SST-LPS coordination H1. Acceptable protective ratio? H2. Acceptable protective ratio? YES NO YES I1. Check self-restoring insulation issues like clearance, parasitics and partial discharge I2. Check self-restoring insulation issues like clearance, parasitics and partial discharge J1. Insulation coordination design for LFT accomplished J2. Insulation coordination design for SST accomplished Procedure for Transformer Insulation Coordination Design: 1. Determination of external voltage stresses 2. Selection of transformer insulation strength 3. Application of surge-protective devices 4. Evaluation of protective ratios and self-restoring insulation Fig. 19. Procedures for insulation coordination designs of LFTs and SSTs. Procedures for LFTs are generalized from IEEE standards [25, 32, 48-50]. Procedures for SSTs are proposed to facilitate the future standardization of SST insulation coordination designs. standards including [25, 32, 48-50]. The proposed SST process is an analogy to the standard LFT process with two modifications. One modification is in Part 2: the SST insulation strength can be determined through theoretical analyses before performing destructive breakdown tests on SSTs. The other modification is in Part 3: an LPS is chosen as the main > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < protective device for SSTs to replace the single, normal-rated MOV. Starting from Part 1 in Fig. 19, the external stress faced by SSTs is the 1.2/50 μs lightning overvoltage impulse for the insulation coordination design in this study. In Part 2, the insulation strength of an LFT is usually determined experimentally through standard lightning impulse tests to get the BIL ratings as described above. To the opposite, it is meaningless to perform LFT-equivalent impulse tests on an unprotected SST at this step, because the semiconductor modules will get damaged by the BIL-equivalent overvoltage. Without performing destructive tests, the insulation strength of an unprotected SST can be estimated through calculations. For a general SST that cascades N submodules with a breakdown voltage of Vb in each submodule, a reasonable assumption about the maximum insulation strength of SST is × ππ . Just like the 16.5 kV insulation strength for the M-S4T cascading five submodules with 3.3 kV MOSFETs. Surge protective devices are selected in Part 3 of both LFT and SST design processes. The steps for LFTs are much more straightforward than the steps for SSTs, because LFTs can choose off-the-shelf MOV products and read MOV protective levels from their datasheets. Comparatively, SSTs need customized protective devices like an LPS. The lightning impulse protective levels of an LPS should be estimated by the frequency-dependent modeling and then confirmed by the inlab 1.2/50 μs lightning impulse tests. After establishing the S4T – LPS coordination from Step B to Step F2.3, the protective ratio (PR) of this S4T – LPS coordination is calculated in Step G2 and then compared to the PR criterion in Step H2. The PR criterion includes empirically defined boundary values to ensure sufficient protective margins in insulation coordination designs [25]. From the lightning impulse tests presented in Section IV.C, the lightning protective ratio PRL of S4T – LPS coordination can be calculated as: π πΏ,π4π−πΏππ = S4T theoretical insulation strength LPS lightning impulse protective level = 16.5 kV = 1.26 > 1.2 13.0 kV (10) The S4T-LPS coordination qualifies as acceptable coordination with regards to the lightning impulse protection, because the value of PRL,S4T-LPS,exp is larger than the standardized boundary value of 1.2 [26, 32]. If the protective ratio of S4T – LPS coordination fails this PR criterion, the design process should flow back to Step E2 and change the structure and components inside the LPS. The design process cannot flow back to Step B2 for increasing the insulation strength of M-S4T, because it means more submodules to be added and then the total volume and weight of M-S4T will be increased. If the PR criterion is successfully met in Step H2, the M-S4T insulation coordination design process will proceed to Step I2 and start checking the self-restoring insulation issues that are related with clearance, parasitics and partial discharge [22, 53, 54]. In summary, without a BIL value representing the lightning impulse withstand capability of an SST, the SST insulation Transmission Line Breaker MOV-protected-LFT OK 10 Load NO LPS-protected-SST LPS SST Fig. 20. Preferred deployment approach of using an LPS-protected-SST to replace a MOV-protected-LFT in distribution systems from the perspective of insulation coordination designs. coordination design should go through the full process with simulation and experiment as generalized in Fig. 19 to get the PR value for representing the level of surge protection. B. Deployment of LPS-Protected-SST in Distribution Systems From the perspective of insulation coordination, an M-S4T should not be used as a direct replacement for an LFT in distribution systems because the single, normal-rated MOV cannot effectively protect the M-S4T as described above. Instead, it should be the LPS-protected-S4T replacing the MOV-protected-LFT as shown in Fig. 20. This replacement suggestion is based on the following analyses. To begin with, suppose the BIL ratings in the system of Fig. 20 have been coordinated properly following this relationship [49, 51]: πππππ,π΅ πΏ ≥ ππππππππ,π΅ πΏ > ππΏπΉπ,π΅ πΏ β« ππππ,ππΏ (11) where ππππ,ππΏ refers to the protective levels of the MOV. According to this chain of insulation coordination of (11), the MOV should react to the overvoltage surges at a much lower voltage than the transformer BIL rating to protect the LFT. Next, the LFT, the circuit breaker, and the transmission line may fail consecutively if the overvoltage levels still exceed their respective BIL ratings and MOV protective limits (the MOVs for the circuit breaker and the transmission line are not shown in Fig. 20). In this way, the “risk of failures” of power equipment within this distribution substation is properly coordinated and effectively controlled. If an SST wants to replace the LFT inside this voltage coordination chain, the protective devices should be changed from the MOV to the LPS at the same time to avoid the challenge of mismatched protective levels. The new insulation coordination chain for the field-deployed SST becomes: πππππ,π΅ πΏ ≥ ππππππππ,π΅ πΏ β« ππππ,ππ > ππΏππ,ππΏ (12) Different from (11), the (12) shows that the inherent breakdown voltage of an SST ππππ,ππ is much lower than the BIL rating of circuit breaker (suppose the circuit breaker is not the solid-state type) [27]. The SST insulation strength is slightly higher than the protective levels of its LPS device. This difference in voltage coordination relationships leads to different failure analyses of the two systems. In the LFT-based system of Fig. 20, the failure rate of LFT is independent of its > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < protective MOV, and the LFT could still withstand a considerate level of overvoltage after its protective MOV fails. As a contrast, the SST in Fig. 20 has so limited overvoltage margin by itself that the overall surge withstand capability and failure rate of the LPS-protected-S4T is majorly determined by its LPS. Once its LPS device fails, the M-S4T cannot withstand most of the overvoltage impulses by itself. In this way, the reliability of LPS becomes extremely important. This is one of the reasons that a higher-rated MOV M1 has been chosen for the LPS prototype to achieve higher reliability and a longer life expectancy. VI. CONCLUSION This paper has addressed two challenges on insulation coordination designs for grid-connected SSTs. The first challenge is the higher lightning impulse protective levels of a MOV than the insulation strength of an SST. The solution to this first challenge is the proposed LPS circuit with sufficiently low protective levels. Design principles and frequencydependent models of the LPS circuit are established to adjust the protective levels and the current sharing among MOVs. With the impulse generator set to output a standard 90 kV-peak 1.2/50 μs impulse during in-lab tests, the final output voltage of the LPS prototype is only 13 kV, which is 15% lower than the M-S4T breakdown voltage of 15 kV. With an experimentallyconfirmed protective ratio of 1.26, the S4T – LPS coordination is qualified as the acceptable insulation coordination with sufficient protective margin. The second challenge is the incompatibility between impulse test codes and SST protective devices, which causes that a BIL rating cannot be assigned to the LPS-protected-SST. The solution to this conflict is the proposed insulation coordination design flowchart for SSTs, which completely evaluates the surge withstand capability of SSTs under lightning impulses. Without a BIL rating as the reference, the insulation coordination designs for SSTs need the protective ratio of the S4T-LPS coordination to demonstrate the degree of surge protection. Last but not least, the guidance on substituting MOV-protected-LFT by an LPS-protected-SST is also provided to control the risk of failure of SSTs and facilitate the SST field deployment in the insulation-coordinated distribution systems. ACKNOWLEDGMENT The information, data, or work presented herein was funded by the Advanced Research Projects Agency-Energy (ARPA-E), U.S. Department of Energy, under Award Number DEAR0000899 in the CIRCUITS program monitored by Dr. Isik Kizilyalli. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States government or any agency thereof. The authors would like to thank Brandon Royal in the Center for Distributed Energy at Georgia Tech on assembling the LPS prototype. The authors would also like to thank Prof. Peter Zeller from the University of Applied Sciences Upper Austria for his expert advice on MOV structures and applications 11 REFERENCES [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] [11] [12] [13] [14] [15] [16] [17] [18] [19] J. E. Huber and J. W. Kolar, "Applicability of Solid-State Transformers in Today’s and Future Distribution Grids," IEEE Trans. Smart Grid, vol. 10, no. 1, pp. 317-326, 2019. M. Liserre, G. Buticchi, M. 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Divan, "Robust Predictive Control for Modular Solid-State Transformer With Reduced DC Link and Parameter Mismatch," IEEE Trans. Power Electron., vol. 36, no. 12, pp. 1429514311, 2021. T. Guillod, R. Faerber, D. Rothmund, F. Krismer, C. M. Franck, and J. W. Kolar, "Dielectric Losses in Dry-Type Insulation of MediumVoltage Power Electronic Converters," IEEE Trans. Emerg. Sel. Topics Power Electron., vol. 8, no. 3, pp. 2716-2732, 2020. Chunmeng Xu (S’16–M’21) received the B.S. degree in electrical engineering from Xi'an Jiaotong University, Xi'an, China in 2016, the M.S. and the Ph.D. degree in electrical and computer engineering from Georgia Institute of Technology, Atlanta, GA, USA in 2019 and 2021 respectively. She is currently a Research Scientist with ABB Raleigh Research Center, Raleigh, NC, USA. Her research interests include solid state circuit breakers, multiphysical design and prototyping, and advanced switchgear for DC system protections. Jia Wei (S'16–M’21) received the B.S. degree in electrical and computer engineering from Ohio State University, Columbus, OH, USA in 2015 and the M.S. degree in electrical and computer engineering from Georgia Institute of Technology, Atlanta, GA, USA in 2016. He is currently working toward the Ph.D. in electrical and computer engineering at Georgia Institute of Technology. His research interests include novel dielectric materials and gas discharge theories. Liran Zheng (S’17–M’21) received the B.S. degree in control engineering from Tsinghua University, Beijing, China, in 2016, and the M.S. degree in electrical and computer engineering from Georgia Institute of Technology, Atlanta, GA, USA, in 2018, where he is currently working towards the Ph.D. degree with the Center for Distributed Energy. He was a Visiting Student with the Center for Power Electronics Systems, Virginia Polytechnic Institute and State University, Blacksburg, VA, USA, and The University of Texas at Austin, Austin, TX, USA, in summer 2015 and fall 2014, respectively. His research interests include power electronics and distributed energy resources. > REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 13 Xiangyu Han (S’15–M’20) received the B.Eng degree in electrical engineering from Xi’an Jiaotong University, Xi'an, China, in 2014 and the Ph.D. degree in the electrical and computer Engineering from Georgia Institute of Technology, Atlanta, GA, USA, in 2020. He is currently a Senior Electronic Design Engineer with Tesla, Pala Alto, CA, USA. His research interests include wide-bandgap power devices and applications of power electronics in power systems. is funded by clean-tech venture capital firm Khosla Ventures and investor Bill Gates. He currently serves as the Chief Scientist and Founder of Varentec. He is also the Scientific Founder of two additional companies—Innovolt, based in Atlanta, which makes next-generation power protection and asset management devices and where he serves on the Board, and Soft Switching Technologies Corporation, where he served as the CEO and developed a range of devices to help manufacturing facilities ride-through power disturbances. He has also been a Professor in electric engineering at the University of Wisconsin-Madison, Madison, WI, USA. He has more than 250 papers and holds 50 issued and pending patents. Dr. Divan is a member of the U.S. National Academy of Engineering. He is the first recipient of the IEEE William E. Newell Power Electronics Award, and a past President of the IEEE Power Electronics Society Maryam Saeedifard (SM’11) received the Ph.D. degree in electrical engineering from the University of Toronto, Toronto, Canada, in 2008. She is currently as Associate Professor in the School of Electrical and Computer Engineering at Georgia Institute of Technology, Atlanta, GA, USA. Prior joining Georgia Tech, she was an Assistant Professor in the School of Electrical and Computer Engineering at Purdue University, West Lafayette, IN, USA. Her research interests include power electronics and applications of power electronics in power systems. Lukas Graber (S’02–M’03–SM’11) received the Diploma and doctorate degrees in electrical engineering from ETH Zurich, Zürich, Switzerland, in 2002 and 2009, respectively. He is currently an Associate Professor in the School of Electrical and Computer Engineering at Georgia Institute of Technology, Atlanta, GA, USA. Before he joined Georgia Tech, in 2015, he was with the Center for Advanced Power Systems, Florida State University—initially as a Postdoctoral Research Associate and later as a Research Faculty Member. His research interests include superconducting power cables and fault current limiters, cryogenic power electronics, supercritical dielectric materials, ultrafast mechanical switchgear, short-circuit forces in substations, and grounding aspects of power distribution on future all-electric ships. He is a member of the CIGRE, CSA, and Electrosuisse. He serves on the Board of Directors for CSA, an Editor for select issues of the IEEE Transactions on Applied Superconductivity, and contributes to standard committees, taskforces, as well as study committees within IEEE and CIGRE. Rajendra Prasad Kandula (S’10–M’14) received the B.E degree in electrical engineering from NIT, Nagpur, India in 2002, the M.E degree from IISC, Bangalore, India in 2004, and the Ph.D. degree in electrical engineering from Georgia Institute of Technology, Atlanta, GA, USA in 2014. He worked for three years in, Bharat Heavy Electricals Limited (BHEL) R&D, Hyderabad, as Design Engineer in the area of industrial drives and PV applications. He worked at Varentec, Santa Clara, as a Principal Engineer, mainly working in the area of development of power flow controllers and hybrid transformers for meshed transmission systems. He is currently working as a Chief Engineer with Center for Distributed Energy, Georgia Tech, Atlanta, USA. His main research interests include applications of power electronics for utility applications such as hybrid transformers, solid state transformers, hybrid filters, grid-forming converters, etc. Karthik Kandasamy (S’11–M’16) received the B.E. degree in Electrical and Electronics Engineering from PSG College of Technology, Anna University (India) in 2008, and the M.Sc. degree in Power Engineering and the Ph.D. degree in the field of Power Electronics from Nanyang Technological University (Singapore) in 2011 and 2016 respectively. He was associated with the Rolls-Royce@Nanyang Technological University (Singapore), the Center for Distributed Energy at Georgia Institute of Technology (USA) and McMaster University (Canada) as a PostDoctoral Fellow. He is currently working as a Power Electronics Engineer with Adamson Systems Inc. (Canada), in design and development of high density power supply and amplifier systems for professional touring loudspeakers. His research interests lie in the field of wide bandgap devices, soft-switching power converters and control. Deepak Divan (S’78–M’78–SM’91–F’98–LF’20) received the B.Tech. degree from the Indian Institute of Technology, Kanpur, India, in 1975, and the M.Sc. and Ph.D. degrees from the University of Calgary, Calgary, AB, Canada, in 1979 and 1983, respectively, all in electrical engineering. He is currently the John E. Pippin Chair Professor and the Director of the Center for Distributed Energy, Georgia Institute of Technology, Atlanta, GA, USA. From 2011 to 2015, he was the President and CTO of Varentec, Santa Clara, CA, USA, a company focused on grid edge control that View publication stats