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CHG N O T I C E 2
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MIL-HDBK-217F
2 DECEMBER 1991
SUPERSEDING
MIL-HDBK-217E, Notice 1
2 January 1990
MILITARY HANDBOOK
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RELIABILITY PREDICTION OF
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NOT MEASUREMENT
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NOTICE 2
28 February 1995
MILITARY HANDBOOK
RELIABILITY PREDICTIONOF ELECTRONIC EQUIPMENT
To all holders of MIL-HDBK-217F
1. The following pages of MIL-HDBK917F have been revised and supersede the pages listed.
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2.
Retain the pages of this notice and insert before the Table
3.
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and additions indicatedhavebeen
entered. The notice pages will be retainedasachecksheet.Theissuance,
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appended pages, is a separate publication. Each notice is to be retained by stocking points until
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-
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MILITARY HANDBOOK
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
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vi¡
5-3
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I
Date
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~~
MIL-HDBK-2L7F N O T I C E L R E
~
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9399970 O076089
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MIL-HDBK-217F
NOTICE 1
of Contents.
2.
Retainthe pages of this noticeandinsertbeforetheTable
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Holders of MIL-HDBK-217F will verify that page changes and additions indicated have been
entered. The notice pages will be retained as a check sheet. The issuance, together with
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m
MIL-HDBK-217F
DEPARTMENT OF DEFENSE
WASHINGTONDC
20301
RELIABILITY PREDICTION OF ELECTRONIC EQUIPMENT
1. This standardization handbook was developed by the Department of Defense
with the assistance of the military departments, federal agencies, and industry.
2. Everyefforthas
been made toreflectthelatestinformationonreliability
prediction procedures. It is the intent to review this handbook periodically to
ensure its completeness and currency.
3. Beneficial comments (recommendations,additions,deletions)and
any
pertinentdata whichmay be of useinimprovingthis
document should be
addressed to: RomeLaboratory/ERSR,Attn:Seymour
F. Morris, 525Brooks
Rd.,
Griffiss
AFB, NY
13441-4505,
by
using
the
self-addressed
Standardization DocumentImprovement Proposal (DD Form 1426) appearing
at the end of this document or by letter.
..
II
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NIL-HDBK-217F
C H G NOTICE 2
9999970 O L 9 3 O L B TL2
MIL-HDBK-217F
TABLE
SCOPE
Purpose.................................................................................................................
Application .............................................................................................................
ComputerizedReliabilityPrediction
.........................................................................
1:
SECTION 2:
SECTION
3.1
3.2
3.3
3.4
REFERENCE
DOCUMENTS
.......................................................................
3: INTRODUCTION
Reliability Engineering ............................................................................................
TheRole of Reliability Prediction..............................................................................
Limitations of Reliability Predictions..........................................................................
PartStressAnalysisPrediction ................................................................................
SECTION 4:
RELIABILITY ANALYSIS EVALUATION ...................................................
1-1
1-1
1-1
2-1
3-1
3-1
3-2
3-2
4-1
SECTION 5: MICROCIRCUITS.
INTRODUCTION ...........................................................
5.1
Gate/LogicArraysandMicroprocessors
....................................................................
5.2
Memories
...............................................................................................................
5.3VHSlCNHSlC
Like ..................................................................................................
5.4
GaAs MMlCandDigitalDevices ................................................................................
5.5
Hybrids ..................................................................................................................
5.6
SAW Devices .........................................................................................................
5.7
MagneticBubbleMemories .....................................................................................
5.8
X.T Table for All ........................................................................................................
5.9
C2TableforAll .......................................................................................................
5.1O
XE, xL and X.QTables for All ....................................................................................
5.1 1
TJDetermination. (All ExceptHybrids) ......................................................................
5.1 2TJ
Determination,(ForHybrids) ................................................................................
5.13
Examples ...............................................................................................................
5-1
5-3
5-4
5-7
5-8
5-9
5-10
5-11
5-13
5-14
5-15
5-17
5-18
5-20
SECTION
6.0
6.1
6.2
6.3
6.4
6.5
6.6
6.7
6.8
6.9
6.10
6.1 1
6.1 2
6.1 3
6.1 4
6.15
6-1
6-2
6-4
6-6
6-8
6-9
6-10
6-12
6-14
6-16
6-17
6-19
6-20
6-21
6-23
6-25
6:
DISCRETE
SEMICONDUCTORS
Discrete Semiconductors. Introduction....................................................................
Diodes. Low Frequency..........................................................................................
Diodes. High Frequency (Microwave.RF) .................................................................
Transistors. Low Frequency. Bipolar........................................................................
Transistors. Low Frequency. Si FET.........................................................................
Transistors, Unijunction ...........................................................................................
Transistors, Low Noise, High Frequency, Bipolar......................................................
Transistors, High Power, High Frequency, Bipolar .....................................................
Transistors, High Frequency, GaAs FET ...................................................................
Transistors, High Frequency, Si FET
........................................................................
Thyristors andSCRs ...............................................................................................
Optoelectronics, Detectors, Isolators, Emitters .........................................................
Optoelectronics, Alphanumeric Displays..................................................................
Optoelectronics, Laser Diode..................................................................................
TJ Determination....................................................................................................
Example.................................................................................................................
...
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SECTION
1. 1
1.2
1.3
OF CONTENTS
MIL-HDBK-217F
CHG N O T I C E 2
9999970 OL970L9 959
MIL-HDBK-217F
NOTICE 2
TABLE OF CONTENTS
SECTION
7.1
7.2
7.3
7: TUBES
AllTypesExcept TWT and Magnetron ....................................................................
Traveling
Wave .......................................................................................................
Magnetron.............................................................................................................
7-1
7-3
7-4
SECTION 8:
LASERS
8.0
Introduction...........................................................................................................
8.1
HeliumandArgon
..................................................................................................
8.2
CarbonDioxide.Sealed
.........................................................................................
8.3
Carbon
Dioxide. Flowing .......................................................................................
8.4SolidState.ND:YAGandRubyRod
......................................................................
8-2
8-3
8-4
8-5
SECTION 9:
RESISTORS
9.1
Resistors ...............................................................................................................
9-1
SECTION 10:
CAPACITORS
10.1
Capacitors .............................................................................................................
10.2
Capacitors.
Example
..............................................................................................
SECTION
11.1
11.2
11.3
11 :
INDUCTIVE
DEVICES
Transformers .........................................................................................................
Coils .....................................................................................................................
Determination of Hot Spot Temperature ................................................................
8-1
10-1
10-6
11-1
11-3
11-4
SECTION 12:
ROTATING
DEVICES
12.1
Motors
..................................................................................................................
12.2
SynchrosandResolvers
........................................................................................
12.3
ElapsedTimeMeters ..............................................................................................
12-1
12-4
12-5
SECTION 13:
RELAYS
13.1
Mechanical.............................................................................................................
13.2
SolidStateandTimeDelay .....................................................................................
13-1
13-3
SECTION 14:
SWITCHES
14.1
Switches................................................................................................................
14.2
Circuit
Breakers .....................................................................................................
14-1
14-2
SECTION 15:
CONNECTORS
15.1
Connectors. General ..............................................................................................
15.2
Connectors,
Sockets .............................................................................................
15-1
15-3
SECTION 16:
INTERCONNECTION
ASSEMBLIES
16.1InterconnectionAssemblieswithPlatedThroughHoles
16.2
InterconnectionAssemblies,SurfaceMountTechnology
16-1
16-2
..........................................
.........................................
SECTION 17:
CONNECTIONS
17.1
Connections ..........................................................................................................
17-1
SECTION 18:
METERS
18.1
Meters.
Panel .........................................................................................................
18-1
SECTION 19:
QUARTZ
CRYSTALS
19.1
Quartz
Crystals ......................................................................................................
19-1
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NOTICE 2
TABLE
OF
CONTENTS
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SECTION 20: LAMPS
20.1 Lamps...................................................................................................................
20-1
SECTION 21 : ELECTRONIC
FILTERS
21 .1
Electronic Filters. Non-Tunable................................................................................
21-1
SECTION
22:
FUSES
22.1
Fuses ...................................................................................................................
22-1
SECTION 23: MISCELLANEOUS PARTS
23.1 Miscellaneous
Parts ................................................................................................
23-1
APPENDIX A:
PARTS COUNT RELIABILITY PREDICTION..........................................
A- 1
APPENDIX B:
VHSICNHSIC-LIKE AND VLSl CMOS (DETAILED MODEL) ..............
B-1
APPENDIX C:
BIBLIOGRAPHY .........................................................................................
c-1
LISTOF
Table 3-1:
Table 3-2:
Table 4-1:
Table 6-1:
Table 6-2:
Partswith Multi-Level QualitySpecifications ........................................................
EnvironmentalSymbolandDescription
..............................................................
ReliabilityAnalysisChecklist .............................................................................
DefaultCaseTemperaturesfor All Environments (“C) ..........................................
ApproximateThermalResistance for SemiconductorDevices
................................................................................
in Various Package Sizes
LISTOF
Figure 5-1:
Figure 8-1:
page
Revision
Supersedes
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TABLES
6-24
FIGURES
Cross Sectional View of a Hybrid with a Single Multi-Layered Substrate ................
Examples of ActiveOpticalSurfaces ..................................................................
v of
3-3
3-4
4-1
6-23
F
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= 7799770
CHG N O T I C E 2
O377022 443
MIL-HDBK-217F
NOTICE 2
FOREWORD
1.0
THIS
HANDBOOK
IS FOR GUIDANCE
ONLY.
THIS
HANDBOOK
SHALL
NOT
BE
CITED AS REQUIREMENT.
A
IF IT IS, THE
CONTRACTOR
DOES
NOT
HAVE
TO
COMPLY.
MIL-HDBK-217F,Notice
2 provides thefollowingchangesbasedupon
study (see Ref. 37 listed in Appendix C):
Revised resistor and capacitor models, including new models
a recentlycompleted
to address chip devices.
Updated failure ratemodelsfortransformers,coils,motors,relays,switches,circuitbreakers,
connectors,printedcircuitboards(withandwithoutsurfacemounttechnology)and
connections.
Anewmodel to addresssurfacemountedtechnologysolderconnections.
9
ArevisedTravelingWaveTubemodelbasedupondatasuppliedby
the ElectronicIndustries
Association Microwave Tube Division. This further lowers
the calculated failure rates beyond
the earlier modifications made in the base document (MIL-HDBK-217F, 2 December 1991).
RevisedtheFast
RecoveryPower
reevaluation of Ref. 28.
2.0
MIL-HDBK-217F, Notice1,
errors in the basic F Revision.
Rectifierbasefailurerate
downward basedon
a
(10 July 1992) was issued to correctminortypographical
3.O
MIL-HDBK-217F,
(base
document),
(2 December
1991)
provided
the
following
changes based upon recently completed studies (see Ref. 30 and 32 listed in Appendix C):
1. New failure rate prediction modelsare provided for the following nine major classes of
microcircuits:
Monolithic Bipolar Digital and Linear Gate/Logic Array Devices
Monolithic MOS Digital and Linear Gate/Logic Array Devices
Monolithic Bipolar and MOS Digital Microprocessor Devices
(including Controllers)
Monolithic Bipolar and MOS Memory Devices
Monolithic GaAs Digital Devices
Monolithic GaAs MMlC Devices
Hybrid Microcircuits
Magnetic Bubble Memories
The 2 December1991 revision provided new prediction modelsfor bipolar andMOS
60,000, linearmicrocircuitswith
up to 3000
microcircuitswith
gate countsupto
transistors, bipolar and MOS digital microprocessorandco-processorsup
to 32 bits,
to 1 million bits, GaAs monolithic microwave integrated circuits
memory devices with up
("ICs)
with up to 1,000 active elements, and GaAs digital ICs with up to 10,000
transistors. The C, factors have been extensively revised to reflect new technology
devices with improved reliability, and the activation energies representing the temperature
sensitivity of the dice ( 7 ~ have
~ ) been changed for MOS devices and for memories. The
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Surface Acoustic Wave Devices
MIL-HDBK-217F
CHG N O T I C E 2
W 9999970 0397023 3 8 T
MIL-HDBK-217F
NOTICE 2
FOREWORD
C2 factor remains unchanged from the previous Handbook version, but includes
pin grid
arrays and surface mount packages using the same model as hermetic, solder-sealed dual
in-line packages. New values have been included for the
quality factor (xa), the learning
factor (xL), andthe environmentalfactor (xE). Themodel for hybrid microcircuitshas
been revised to be simpler to use, to delete the temperature dependence of the seal and
interconnectfailurerate
contributions,and
to provide a method of calculatingchip
junction temperatures.
2. A newmodel for Very High Speed IntegratedCircuits(VHSICNHSICLike)
Large Scale Integration (VLSI) devices (gate counts above 60,000).
andVery
3. The reformatting of the entire handbook to make it easier to use.
4. A reduction in the number of environmental factors (XE) from 27 to 14.
5. A revised failure rate model for Network Resistors.
6. Revised models for TWTsand
Klystronsbased
Industries Association Microwave Tube Division.
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-
1.1
Purpose
Thishandbook
is for guidanceonlyandshallnotbecitedasa
T he
requirement. If it is, thecontractordoesnothavetocomply(seePage1-2).
purpose of this handbook is to establish and maintain consistent and uniform methods for estimating
the inherent reliability (Le., the reliability of amaturedesign)of
military electronic equipment and
systems. It provides a common basis for reliability predictions during acquisition programs for military
electronic systems and equipment. It also establishes a common basis
for comparing and evaluating
reliability predictions of related or competitive designs. The handbook is intended to be used as a tool
to increase the reliability of the equipment being designed.
-
1.2
Application Thishandbookcontains two methodsof reliability prediction - "Part Stress
Analysis" in Sections 5 through 23 and "Parts Count" in Appendix A. These methods vary in degree
of information needed to apply them. The Part Stress Analysis Method requires a greater amount of
detailed information and is applicable during the later design phase when actual hardware and circuits
are beingdesigned.The
Parts CountMethodrequiresless
information, generally part quantities,
quality level, and the application environment. This method is applicable during the early design phase
andduringproposal formulation. In general,thePartsCount
Method will usually result in amore
conservative estimate (Le., higher failure rate) of system reliability than the Parts Stress Method.
Supersedes page 1-11-1
of Revision F
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MIL-HDBK-217F C H 6 N O T I C E 2
MIL-HDBK-217F
NOTICE 2
1.0
SCOPE
OFFICE OF THE ASSISTANT SECRmARY OF DEFENSE
9906 DEFENSE PENTAGON
WASHINGTON. DC x U o 1 - 3 # ) 0
FEB 2 8 1995
SUBJECT:
Notice 2 to MIL-HDBK-217F, 'Reliability Prediction of
Electronic Equipment', Project RELI-O074
Prior to sending the subject noticet o the M D Single Stock
Point f o r printing and distribution, the following additions=st
be made:
-
Across the cover in BIG BOLD BLJu3K LETpisRs ALL CAPS: Insert
'TRIS HANDBOOK IS FOR GUIDANCE =Y.
DO NOT CITE T H I S
DOCUMENT As A REQmREMENT..
In the POREWORD (Page vii of Notice 2 ) . paragraph 1.0: A d d
'THIS HANDBOOK IS FOR GUIDANCE ONLY. TEacS HANDBOOK SHWl NOT
BE CITED AS A REQVIREMENT. IF IT I S , TRE RDOES NOT
HAVE M COMPLY.
Add an entry f o r the SCOPE, paragraph 1.1 (Purpose): 'This
handbook is f o r guidance only and shall not be cited as a
requirement. If it is, the contractor &es not have to
comply.
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cc:
OUSD(A&T)IYTSE&E/SE, Mr. M. Zsak
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CH6 N O T I C E 2
9999970 O377026 079
MIL-HDBK-217F
NOTICE 2
2 . 0 REFERENCE
DOCUMENTS
This handbook cites some specifications which have been cancelled or which describe devices that are
not to be used for new design. This information is necessary because someof these devices are used in
so-called "off-the-shelf"equipment which the Department of Defense purchases. The documents cited
in this section are for guidance and information.
TITLE
SECTION #
Capacitors, Fixed, Mica Dielectric, General Specification for
MIL-C-5
10.1
MIL-R-11
9.1
Resistor, Fixed, Composition (Insulated), General Specification for
MIL-R-19
9.1
Resistor, Variable, Wirewound (Low Operating Temperature) General
Specification for
MIL-C90
10.1
MIL-R-22
9.1
Resistor, Variable, Wirewound (Power Type), General Specification for
MIL-C-25
10.1
Capacitor, Fixed, Paper-Dielectric, Direct Current (Hermetically Sealed
in Metal Cases), General Specification for
MIL-R-26
9.1
Capacitor, Fixed, Ceramic Dielectric (Temperature Compensating),
Established Reliability and Nonestablished Reliability, General
Specification for
Resistor, Fixed, Wirewound (Power Type), General Specification for
M I L-T-27
11.1
Transformer and Inductors (Audio, Power, High Power Pulse),
General Specification for
MIL-(2-62
10.1
Capacitor, Fixed Electrolytic (DC, Aluminum, Dry Electrolyte,
Polarized), General Specification for
MIL-C-81
10.1
Capacitor, Variable, Ceramic Dielectric, General Specification for
MIL-C-92
10.1
Capacitor, Variable, Air Dielectric (Trimmer), General Specification for
MIL-R-93
9.1
Resistor, Fixed, Wirewound (Accurate), General Specification for
M IL- R-94
9.14
Resistor, Variable, Composition, General Specification for
MIL-V-95
23.1
Vibrator, Interrupter and Self-Rectifying, General Specification for
w-L-111
20.1
Lamp, Incandescent Miniature, Tungsten Filament
w-c-375
14.5
Circuit Breaker, Molded Case, Branch Circuit and Service
W-F-1726
22.1
Fuse, Cartridge, Class H (this covers renewable and nonrenewable)
W-F-1814
22.1
Fuse, Cartridge, High Interrupting Capacity
MIL-C-3098
19.1
Crystal Unit, Quartz, General Specification for
MIL-C-3607
15.1
Connector, Coaxial, Radio Frequency, Series Pulse, General
Specifications for
MIL-C-3643
15.1
Connector, Coaxial, Radio Frequency, Series HN and Associated
Fittings, General Specification for
Supersedes page 2-1 of Revision F
Document provided by IHS.
2-1
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SPECIFICATION
flIL-HDBK-217F
C H G NOTICE 2
9 9 9 9 9 7 0 0397027 T25
MIL-HDBK-217F
NOTICE 2
2 .O
REFERENCE DOCUMENTS
MIL-C-3650
15.1
Connector, Coaxial, Radio Frequency, Series LC
MIL-C-3655
15.1
Connector, Plug and Receptacle,Electrical (Coaxial Series Twin) and
Associated Fittings, General Specification for
MIL-S-3786
14.3
Switch, Rotary (Circuit Selector, Low-Current (Capacity)), General
Specification for
MIL-S-3950
14.1
Switch, Toggle, Environmentally Sealed, General Specification for
MIL-C-3965
10.1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum, General
Specification for
MIL-(3-5015
15.1
Connector, Electrical, Circular Threaded, AN Type, General
Specification for
MIL-F-5372
22.1
Fuse, Current Limiter Type, Aircraft
MIL-S-5594
14.1
Switches, Toggle, Electrically Held Sealed, General Specification for
MIL-R-5757
13.1
Relays, Electromagnetic,General Specification for
MIL-R-6106
13.1
Relay, Electromagnetic (Including Established Reliability(ER) Types),
General Specification for
MIL-L-6363
20.1
MIL-S-8805
2-2
Switches and Switch Assemblies, Sensitive and Push (Snap Action),
General Specification for
MIL-S-8834
14.1
Switches, Toggle, Positive Break, General Specification for
MIL-S-8932
14.1
Switches, Pressure, Aircraft, General Specification for
MIL-S-9395
14.1
Switches, Pressure, (Absolute, Gage, and Differential), General
Specification for
MIL-S-9419
14.1
Switch, Toggle, Momentary Four Position On, Center Off, General
Specification for
MIL-"10304
18.1
Meter, Electrical Indicating, Panel Type, Ruggedized, General
Specification for
Resistor, Fixed Film (High Reliability), General Specification for
MIL-R-10509
9.1
MIL-C-10950
10.1
Capacitor, Fixed, Mica Dielectric, Button Style, General Specification
for
MIL-C-11015
10.1
Capacitor, Fixed, Ceramic Dielectric (General Purpose), General
Specification for
MIL-C-11272
10.1
Capacitor, Fixed, Glass Dielectric,General Specification for
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Document provided by IHS.
14.1,14.2
Lamp, Incandescent, Aircraft Service, General Specification for
page
Supersedes
2-2 of Revision F
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MIL-HDBK-217F
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MIL-HDBK-217F
NOTICE 2
2 . O REFERENCE
~~~~
DOCUMENTS
MIL-C-I 1693
10.1
MIL-R-1 1804
9.1
MIL-S-12211
14.1
Switch, Pressure
MIL-S-12285
14.1
Switches, Thermostatic
MIL-S-12883
15.3
Sockets and Accessories for Plug-ln Electronic Components, General
Specification for
MIL-C-12889
10.1
Capacitor, By-pass, Radio - Interference Reduction, Paper Dielectric,
AC and DC, (Hermetically Sealed in Metallic Cases), General
Specification for
MIL-R-12934
9.1
Capacitor, Feed Through, Radio Intederence Reduction AC and DC,
(Hermetically Sealedin Metal Cases) Established and Nonestablished
Reliability, General Specification for
Resistor, Fixed, Film (Power Type), General Specification for
Resistor, Variable, Wirewound. Precision, General Specification for
M IL-S-13484
14.1
Switch, Sensitive: 30 Volts Direct Current Maximum, Waterproof
MIL-C-13516
14.2
Circuit Breakers, Manual and Automatic (28
Volts DG)
MIL-S-13623
14.1
Switches, Rotary: 28 Volt DC
MIL-R-13718
13.1
Relays, Electromagnetic 24 VoltDC
MIL-S-13735
14.1
Switches, Toggle: 28 Volt DC
MIL-G14409
10.1
Capacitor, Variable (Piston Type; Tubular Trimmer), General
Specification for
MIL-F-15160
22.1
Fuse, Instrument, Power and Telephone
MIL-S-15291
14.1
Switches, Rotary, Snap Action and DetenVSpring Return Action,
General Specification for
MIL-C15305
11.2
Coils, Electrical, Fixed and Variable, Radio Frequency, General
Specification for
MIL-GI5370
15.1
Couplers, Directional, General Specification for
MIL-F-15733
21.1
Filters and Capacitors, Radio Frequency Interference, General
Specification for
MIL-S-15743
14.1
Switches, Rotary, Enclosed
MIL-G18312
10.1
Capacitor, Fixed, Metallized (Paper, Paper Plastic or Plastic Film)
Dielectric, Direct Current (Hermetically Sealed
in Metal Cases), General
Specification for
MIL-F-18327
21 .i
Filter, High Pass, Low Pass, Band Pass, Band Suppression and Dual
Functioning, General Specification for
page
Supersedes
2-3 of Revision F
2-3
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MIL-HDBK-217F
CH6 N O T I C E 2
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MIL-HDBK-217F
NOTICE 2
2-4
Document provided by IHS.
MIL-R-18546
9.1
Resistor, Fixed, Wirewound (Power Type, Chassis Mounted), General
Specification for
MIL-S-19500
6.0
Semiconductor Device, General Specification for
MIL-R-19523
13.1
Relays, Control
MIL-R-19648
13.1
Relay, Time, Delay, Thermal, General Specificationfor
MIL-C-19978
10.1
Capacitor, Fixed Plastic (or Paper-Plastic) Dielectric (Hermetically
Sealed in Metal, Ceramic or Glass Cases), Established and
Nonestablished Reliability, General Specification for
MIL-T-21038
11.1
Transformer, Pulse, Low Power, General Specification for
MIL-C-21097
15.1
Connector, Electrical, Printed Wiring Board, General Purpose, General
Specification for
MIL-S-21277
14.1
Switches, Liquid Level, General Specification for
MIL-C-21617
15.1
Connectors, Plug and Receptable- Electrical Rectangular, Polarized
Shell, Miniature Type
MIL-R-22097
9.1
MIL-S-22614
14.1
MIL-R-22684
9.2
MIL-S-22710
14.4
Switches, Code Indicating Wheel (Printed Circuit), (Thumbwheel, In-line
and Pushbutton), General Specification for
MIL-S-22885
14.1
Switches, Pushbutton, Illuminated, General Specification for
MIL-C-22992
15.1
Connectors, Plugs and Receptacles, Electrical, Water-Proof, Quick
Disconnect, Heavy Duty Type, General Specification for
MIL-C23183
10.1
Capacitors, Fixed or Variable, Vacuum
or Gas Dielectric, General
Specification for
MIL-C-23269
10.1
Capacitor, Fixed, Glass Dielectric, Established Reliability, General
Specification for
MIL-R-23285
9.1
Resistor, Variable, Nonwirewound, General Specification for
MIL-F-23419
22.1
Fuse, Cartridge, Instrument Type, General Specification for
MIL-T-23648
9.1
Resistor, Variable, Nonwirewound (Adjustment Types), General
Specification for
Switches, Sensitive
Resistor, Fixed, Film, Insulated, General Specification for
Resistor, Thermal, (Thermally Sensitive Resistor), Insulated, General
Specification for
MS-24055
15.1
Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts,
Female, 7.5 Amps
MS-24056
15.1
Connector, Plug-Receptacle, Electrical, Hexagonal, 9 Contacts, Male,
7.5 Amps
Supersedes page 2-4 of Revision F
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2 . O REFERENCE DOCUMENTS
MIL-HDBK-ZL7F C H G N O T I C E 2
= 9777770
0377030 5LT
MIL-HDBK-217F
NOTICE 2
2 . O REFERENCEDOCUMENTS
MIL-C-24308
15.1
Connectors, Electric, Rectangular, Nonenvironmental, Miniature,
Polarized Shell, Rack and Panel, General Specification for
MIL-S-24317
14.1
Switches, Multistation, Pushbutton (Illuminated and Non-Illuminated),
General Specificationfor
M IL-C-255
16
15.1
Connector, Electrical, Miniature, Coaxial, Environment Resistant Type,
General Specification for
M IL-C-26482
15.1
Connector, Electrical (Circular, Miniature, Quick Disconnect,
Environment Resisting), Receptacles and Plugs, General Specification
for
MIL- C-26500
15.1
Connectors, General Purpose, Electrical, Miniature, Circular,
Environment Resisting,General Specification for
MIL-R-27208
9.1
MIL-G28731
15.1
Connectors, Electrical, Rectangular, Removable Contact, Formed
Blade, Fork Type (For Rack and Panel and Other Applications), General
Specification for
MIL-G28748
15.1
Connector, Plug and Receptacle, Rectangular, Rack and Panel, Solder
Type and Crimp Type Contacts, General Specification for
MIL-R-28750
13.2
Relay, Solid State, General Specification for
MIL-C-28804
15.1
Connectors, Plug and Receptacle, Electric Rectangular, High Density,
Polarized Center Jackscrew,General Specification for, Inactive for New
Designs
MIL-C-28840
15.1
Connector, Electrical, Circular Threaded, High Density,High Shock
Shipboard, Class D, General Specification for
MIL-M-38510
5.0
MIL-S-38533
15.3
MIL-H-38534
5.0
Hybrid Microcircuits, General Specification for
MIL-1-38535
5.0
Integrated Circuits (Microcircuits) Manufacturing,General
Specification for
MIL-G38999
15.1
Connector, Electrical, Circular, Miniature, High Density, Quick
Disconnect, (Bayonet, Threaded, and Breech Coupling) Environment
Resistant, Removable Crimp and Hermetic Solder Contacts, General
Specification for
MIL-C-39001
10.1
Capacitor, Fixed, Mica-Dielectric, Established Reliability, General
Specification for
MIL-R-39002
9.1
MIL-G39003
10.1
Microcircuits, General Specification for
Sockets, Chip Carrier, Ceramic,General Specification for
Resistor, Variable, Wirewound, Semi-Precision, General Specification
for
Capacitor, Fixed, Electrolytic, (Solid Electrolyte), Tantalum,
Established Reliability, General Specification for
Supersedes page 2-5of Revision F
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2-5
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Resistor, Variable, Wirewound, Nonprecision, General
Specification for
M I L - H D B K - 2 1 7 FC H GN O T I C E
9 9 9 9 9 7 0 OL9703L 456
2
MIL-HDBK-217F
NOTICE 2
2 . O REFERENCE
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Document provided by IHS.
Resistor, Fixed, Wirewound (Accurate), Established Reliability, General
Specification for
MIL-R-39005
9.1
MIL-G39006
10.1
MIL-R-39007
9.1
Resistor, Fixed, Wirewound (Power Type), Established Reliability,
General Specification for
MIL-R-39008
9.1
Resistor, Fixed, Composition (Insulated), Established Reliability,
General Specification for
MIL-R-39009
9.1
Resistor, Fixed, Wirewound (Power Type, Chassis Mounted)
Established Reliability, General Specification for
MIL-G3901O
11.2
Coils, Electrical, Fixed, Radio Frequency, Molded, Established
Reliability, General Specification for
MIL-G39012
15.1
Connector, Coaxial, Radio Frequency, General Specification for
MIL-G39014
10.1
Capacitor, Fixed, Ceramic Dielectric (General Purpose), Established
Reliability, General Specification for
MIL-R-39015
9.1
MIL-R-3901 6
2-6
DOCUMENTS
13.1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte) Tantalum
Established Reliability, General Specification for
Resistor, Variable, Wirewound (Lead Screw Actuated), Established
Reliability, General Specification for
Relay, Electromagnetic, Established Reliability, General Specification
for
Resistor, Fixed, Film (Insulated), Established Reliability, General
Specification for
MIL-R-39017
9.1
MIL-G39018
10.1
Capacitor, Fixed, Electrolytic (Aluminum Oxide), Established Reliability
and Nonestablished Reliability, General Specification for
MIL-C-39019
14.5
Circuit Breakers, Magnetic, Low Power, Sealed, Trip-Free, General
Specification for
MIL-G39022
10.1
Capacitors, Fixed, Metallized, Paper-Plastic Filmor Plastic Film
Dielectric, Direct and Alternating Current (Hermetically Sealed in Metal
or Ceramic Cases), Established Reliability, General Specification for
MIL-R-39023
9.1
Resistor, Variable, Nonwirewound, Precision, General Specification for
MIL-R-39035
9.1
Resistor, Variable, Nonwirewound (Adjustment Type), Established
Reliability, General Specification for
MIL-S-45885
14.1
Switch, Rotary
MlL-G49142
15.1
Connectors, Plugs and Receptacle, Electrical Triaxial, Radio
Frequency, General Specification for
MIL-G55074
15.1
Connectors, Plug and Receptacle, Telephone, Electrical, Subassembly
and Accessories and Contact Assembly, Electrical, General
Specification for
MIL-P-55110
15.2
Printed Wiring Board, General Specification
for
MIL-R-55182
9.1
Resistor, Fixed, Film, Established Reliability, General Specification for
page
Supersedes
2-6 of Revision F
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MIL-HDBK-217F C H G N O T I C E 2
9999970 0397032 392
MIL-HDBK-217F
NOTICE 2
2 . 0 REFERENCE DOCUMENTS
MIL-G55235
15.1
Connectors, Coaxial, Radio Frequency, Series TPS
MIL-G55302
15.1
Connector, Printed Circuit, Subassembly and Aocessories
MIL-A-55339
15.1
Adaptors, Connector, Coaxial, Radio Frequency, (Between Series and
Within Series), General Specification for
MlL-R-55342
9.1
MIL-C-55365
10.1
Capacitor, Fixed, Electrolytic (Tantalum), Chip, Established Reliability,
General Specification for
MIL-S-55433
14.1
Switches, Reed, General Specification for
MIL-G55514
10.1
Capacitors, Fixed, Plastic (or Metallized Plastic) Dielectric, DC or DCAC, In Non-Metal Cases, Established Reliability, General Specification
for
MIL-G55629
14.5
Circuit Breaker, Magnetic, Unsealed, or Panel Seal, Trip-Free, General
Specification for
MIL-T-55631
11.1
Transformer, Intermediate Frequency, Radio Frequency and
Discriminator, General Specification for
MIL-G55681
10.1
Capacitor, Chip, Multiple Layer, Fixed, Unencapsulated Ceramic
Dielectric, Established Reliability, General Specification for
MIL-G81511
15.1
Connector, Electrical, Circular, High Density, Quick Disconnect,
Environment Resisting and Accessories, General Specification
for
MIL-S-81551
14.1
Switches; Toggle, Hermetically Sealed, General Specification for
MIL-C-81659
15.1
Connectors, Electrical Rectangular, Crimp
Contact
MIL-S-82359
14.1
Switch, Rotary, Variable Resistor Assembly Type
MIL-G83383
14.5
Circuit Breaker, Remote Control, Thermal, Trip-Free, General
Specification for
MIL-R-83401
9.1
MIL-C83421
10.1
Capacitors, Fixed Metallized Plastic Film Dielectric (DC, AC or DC
and AC) Hermetically Sealed in Metal or Ceramic Cases, Established
Reliability, General Specification for
MIL-C83446
11.2
Coils, Radio Frequency, Chip, Fixed or Variable, General Specification
for
MIL-C83500
10.1
Capacitor, Fixed, Electrolytic (Nonsolid Electrolyte), Tantalum Cathode,
General Specification for
MIL-S-83504
14.1
Switches, Dual In-line Package (DIP), General Specification for
MIL-C-83513
15.1
Connector, Electrical, Rectangular, Microminiature, Polarized Shell,
General Specification for
Resistors, Fixed, Film, Chip, Established Reliability, General
Specification for
Resistor Networks, Fixed, Film and Capacitor-Resistor Networks,
Ceramic Capacitors and Fixed Film Resistors, General Specification for
New Page
2-7
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M I L - H D B K - 2 1 7CFHN6O T I C E
m
2
9999970 0397033 2 2 7
MIL-HDBK-217F
NOTICE 2
2 . O REFERENCEDOCUMENTS
MIL-C-83515
Connectors,
15.1 Telecommunication,
Polarized
Shell,
for
MIL-R-83516
Relays,
13.1
Reed,
Dry,
MIL-C-83517
General Specification
General Specification for
15.1
Connectors,
Coaxial,
Radio
Frequency
Coaxial,
for Strip
Transmission Line, General Specification for
or Microstrip
MIL-R-83520
Relays,
13.1
Electromechanical,
General
Purpose,
Non-Hermetically
Sealed,
Plastic Enclosure (Dust Cover),General Specification for
MIL-C-83527
15.1
Connectors,
Receptacle,
Plug
and Electrical,
Rectangular
Multiple
Insert Type, Rackto Panel, Environment Resisting,15OOC Total
Continuous Operating Temperature, General Specification for
MIL-R-83536
Relays,
13.1
Electromagnetic,
Established
Reliability,
General Specification
for
MIL-C-83723
Connector,
15.1
Electrical (Circular
Environment
Resisting),
Receptacles
and Plugs, General Specification for
MIL-R-83725
Relay,
Vacuum,
13.1
General
Specification
for
MIL-R-83726
13.1,
13.2,
Relays,
13.3
14.1 MIL-S-83731
MIL-G83733
Hybrid and Solid
State,
Time
Delay,
General Specification
for
Switch, Toggle, Unsealed and Sealed Toggle, General Specification for
15.1
MIL-S-83724
15.3
Sockets,
Connector, Electrical, Miniature, Rectangular Type, Rackto Panel,
Environment Resisting, 200°C Total Continuous Operating
Temperature, General Specification for
Plug-ln Electronic
Components,
Dual-ln-Line (DIPS)
and
Single-ln-Line Packages (SIPS), General Specification for
MIL-C-85028
Connector,
15.1 Electrical,
Rectangular,
Individual
Contact
Sealing,
Polarized Center Jackscrew, General Specification for
STANDARD
TITLE
MIL-STD-756
Reliability
Prediction
Modeling
and
for Microelectronics
MIL-STD-883
Test
Methods
Procedures
and
MIL-STD-975
NASA
Standard
Electrical,
Electronic
and
Electromechanical
(EEE)
Parts
List
MIL-STD-1547
Electronic Parts, Materials and Processes for Space and Launch Vehicles,
Technical Requirements for
MIL-STD-1772
Certification
Requirements
for
Hybrid
Microcircuit
Facilities
and
Lines
Copies of specifications and standards required by contractors in connection with specific acquisition
functions should be obtained from the contracting activity or as directed by the contracting officer. Single
copies are also available(without charge) upon written requestto:
Standardization Document Order Desk, 700 Robins Ave., Building 4, Section D,
Philadelphia, PA 19111-5094, (215) 697-2667
New Page
2-8
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RE
m 9999970 0070706
9
MIL-HDBK-217F
3.O
.
INTRODUCTION
-
3. I Rellablllty Englneerlng Reliability is currentlyrecognized as an essential need in military
electronic systems. It is looked upon as a means for reducing costs from the factory, where rework of
defective components adds a non-productive overhead expense,
to the field, where repair costs include
not only parts and laborbut also transportation and storage. More importantly, reliability directly impacts
force effectiveness, measured in terms of availability or sortie rates, and determines the size of the
"logistics tail"inhibiting force utilization.
The achievement of reliability is the function of reliability engineering. Every aspect of an electronic
system, from the purity of materials used in its component devices to the operator's interface, has an
impact on reliability. Reliability engineering must,therefore,be applied throughout the system's
development in a diligent and timely fashion, and integrated with other engineering disciplines.
A variety of reliability engineering fools have been developed. This handbook provides the models
supporting a basictool, reliability prediction.
-
The Role of Rellablllty Predlctlon Reliability prediction provides the quantitativebaseline
needed to assess progress in reliability engineering. A prediction made of a proposed design may be
used in several ways.
3.2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
A characteristic of Computer Aided Design is the ability to rapidly generate alternative solutions to a
particular problem. Reliability predictions for each design alternative provide one measure of relative worth
which, combined with other considerations,
will aid in selecting the bestof the available options.
Once a designis selected, the reliability prediction maybe used as a guide to improvement by showing
it may also reveal other fruitful
the highest contributorsto failure. If the part stress analysis method is used,
areas for change (e.g., over stressed parts).
The impactof proposed design changeson reliability canbe determined only by comparing the reliability
predictions of the existing and proposeddesigns.
level under environmental extremes may be
The ability of the designto -maintain an acceptable reliability
assessed through reliability predictions, The predictions may be used to evaluate the need for
environmental control systems.
The effects of complexity on the probability of mission success can be evaluated through reliability
predictions. The need for redundant or back-up systems may be determined with the aid of reliability
predictions. A tradeoff of redundancy against other reliability enhancing techniques(e.g.: more cooling,
higher part quality, etc.)must be based on reliability predictions coupled with other pertinent
considerations such ascost, space limitations, etc.
The prediction will also help evaluate the significance of reported failures.
For example, ifseveral failures
of one type or component occur in a system, the predicted failure ratecan be used to determine whether
the number of failures is commensurate with the number of components usedin the system, or, that it
indicates a problem area.
Finally, reliability predictionsare useful to various other engineering analyses.As examples, the location
of built-in-test circuitry shouldbe influenced by the predicted failure rates of the circuitry monitored,
and
maintenance strategy plannerscan make use of the relative probabilityof a failure's location, based on
predictions, to minimize downtime. Reliability predictions are also used to evaluate the probabilities of
failure events describedin a failure modes, effects and criiticality analysis (FMECAs).
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INTRODUCTION
-
Limitations of ReliabilityPredlctions
This handbook provides a common basis for
reliability predictions, based on analysisof the best available data at the timeof issue. It is intended to
make reliability prediction as good
a tool as possible. However, like anytool, reliability predictionmust be
used intelligently, with due consideration
of its limitations.
3.3
The first limitation is that the failure rate models are point estimates which are based on available data.
Hence, they are valid for the conditions under which the data was obtained, and for the devices covered.
Some extrapolation during model development is possible, but the inherently empirical nature of the
models can be severely restrictive. For example, none of the models in this handbook predict nuclear
survivability or the effects
of ionizing radiation.
Electronic technology is noted for its dynamic nature. New types of devices and new processes are
continually introduced, compounding the difficulties of predicting reliability. Evolutionary changes may be
handled by extrapolation from the existing models; revolutionary changes may defy analysis.
Another limitation of reliability predictions is the mechanics of the process. The part stress analysis
method requires a significant amount of design detail. This naturally imposes a time and cost penalty.
More significantly, many of the details are not available in the early design stages. For this 'reason this
handbook contains both thepad stress analysismethod (Sections 5 through 23)and a simpler parts count
in early design andbid formulation stages.
method (AppendixA) which can be used
Finally, a basic limitation of reliability prediction is its dependence on correct application by the user.
Those who correctly apply the models and use the information ina conscientious reliability programwill
find the prediction a useful tool. Those who view the prediction only asa number which must exceed a
specified value can usually find
a way to achieve their goal without any impact on the system.
3.4
Part
Stress
Analysls
Predlctlon
-
3.4.1 Applicability This method is applicable when most of the design is completed and a detailed
parts list including part stressesis available. It can also be used during later design phases for reliability
trade-offs vs. part selection and stresses. Sections 5 through 23 contain failure rate models fora broad
variety of parts used in electronic equipment. The parts are grouped by major categories and, where
appropriate, are subgrouped within categories. For mechanical and electromechanical partsnot covered
by this Handbook, referto Bibliography items20 and 36 (Appendix C),
The failure rates presented apply
to equipment under normal operating conditions, ¡.e.,with power on and
performing its intended functionsin its intended environment. Extrapolationof any of the base failure rate
models beyond the tabulated values such as high or sub-zero temperature, electrical stress values above
1.0, or extrapolation of any associated model modifiers is completely invalid. Base failure rates can be
O to 1 using the underlying equations.
interpolated between electrical stress values from
The general procedure for determining a board level (or system level) failure rate is to sum individually
calculated failure ratesfor each component. This summation is then added to a failure rate for the circuit
board (which includes the effects of soldering parts to it) using Section 16, Interconnection Assemblies.
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Even when used in similar environments, the differences between system applications can be significant.
Predicted and achieved reliability have always been closer for ground electronic systems than for avionic
systems, because the environmental stresses vary less from system to system on the ground and hence
the field conditions are in general closerto the environment under which the data was collected for the
prediction model.However,
failure rates are also impactedby operational scenarios,operator
characteristics, maintenarice practices, measurement techniques and differencesin definition of failure.
Hence, a reliability prediction should never be assumed to represent the expected field reliability as
measured by the user (¡.e., Mean-Time-Between-Maintenance, Mean-Time-Between-Removals, etc.).
This does not negate
its value as a reliability engineering tool; note that none of the applications
to match the field measurement.
discussed above requires the predicted reliability
NIL-HDBK-217F
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MIL-HDBK-217F
3.0
For parts or wires soldered together (e.g.,'a jumper wire between two parts), the connections model
is accounted for
appearing in Section 17 is used. Finally, the effectsof connecting circuit boards together
by adding in a failure rate for each connector (Section
15, Connectors). The wire between connectorsis
assumed to have a zero failurerate. For various serviceuse profiles, duty cycles and redundancies the
procedures describedin MIL-STD-756, Reliability Modeling and Prediction, shouldbe used to determine
an effective system level failure rate.
-
3.4.2 Part Quallty .The quality of a part hasa direct effecton the part failure rate and
appears in the
part models as a factor, ZQ. Many parts are coveredby specifications that have several quality levels,
hence, the part models have values of na that are keyedto these quality levels. Such parts with their
quality designators are shown
in Table 3-1. The detailed requirements for these levels are clearly defined
in the applicable specification, except for microcircuits. Microcircuits have quality levels which
are
dependent on the number of MIL-STD-883 screens(or equivalent) to which they are subjected,
Table 3-1:
Parts WlthMuitl-LevelQualitySpecifications
Quality Designators
Microcircuits
SIB,B-1 ,Other: Quality Judged by
Screening Level
Discrete Semiconductors
JANTXV, JANTX, JAN
Capacitors, Established
Reliability (ER)
D, C, SIR, B, P, M, L
Resistors, Established
Reliability (ER)
SIR, P, M
Coils, Molded, R.F.,
Reliability (ER)
Relays, Established
Reliability (ER)
Some parts are covered by older specifications, usually referred
to as Nonestablished Reliability
(Non-ER),.
two quality levels designatedas
that do not have multi-levels of quality. These part models generally have
"MIL-SPEC.",and"Lower".
If the part is procured in complete accordance with the applicable
If any requirements are waived, or if a
specification, the ZQ value for MIL-SPEC should be used.
ZQ value for Lower should
be used.
commercial part is procured, the
The foregoing discussion involves the "as procured" part quality. Poor equipment design, production,
of the higher quality parts requires a total
and testing facilities can degrade part quality. The use
equipment design and quality control process commensurate with the high part quality.
It would make little
sense to procure high quality parts only
to have the equipment production procedures damage the parts
or introduce latent defects. Total equipment program descriptions as they might vary with different part
qualitymixes is beyond thescope of this Handbook. Reliability managementand quality control
procedures are described in other DoD standards and publications. Nevertheless, when a proposed
equipment development is pushing the state-of-the-art and has a high reliability requirement
W equipment program should be given careful scrutiny and not just
necessitating high quality parts, the
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INTRODUCTION
.
the parts quality. Otherwise, the low failure ratesas predicted by the models forhigh quality parts will not
be realized.
-
3.4.3 Use Environment
All part reliability models include the effects of environmental stresses
through the environmental factor, K E , except for the effects of ionizing radiation. The descriptions of
these environmentsare shown in Table 3-2.The zE factor is quantified within each part failure rate model.
These environments encompass the major areas of equipment use. Some equipment will experience
more than one environment during its normal use, e.g., equipment in spacecraft. In such a case, the
reliability analysis should be segmented, namely, missile launch (ML) conditions during boost into and
return fromorbit, and space flight(SF)
while in orbit.
Environment
ITESymbol
Equivalent .
MIL-HDBK-217E,
Notice 1
RE Symbol
.Description
~~
~~
Ground, Benign
GB
Nonmobile, temperature and humidity
controlled environments readily accessible to
maintenance; includes laboratory instruments
and test equipment, medical electronic
equipment, business and scientific computer
complexes, and missiles and support
equipment in ground silos,
Ground, Fixed
GF
Moderately controlled environments such as
installation in permanent racks with adequate
cooling air and possible installation in unheated
of air
buildings; includes permanent installation
traff ¡c control radar and communications
facilities.
. .
Ground, Mobile
Equipment installed on wheeled or tracked
vehicles and equipment manually transported;
includes tactical missile ground support
equipment, mobile communication equipment,
tactical fire direction systems, handheld
cammunications equipment, laser designations
and range finders.
Naval, Sheltered
Includes sheltered orbelow deck conditions on
surface ships and equipment installed in
submarines.
Naval, Unsheltered
Unprotected surface shipborne equipment
exposed to weather conditions and equipment
immersed in salt water. Includes sonar
on hydrofoil
equipment and equipment installed
vessels.
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Table 3-2: Environmental Symbol andDescription
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INTRODUCTION
Table 3-2: Environmental Symbol and, Descrlptlon (cont’d)
Equivalent
MIL-HDBK-217E,
Notice 1
“E Symbol
Environment
Description
AIC
AIT
Typical conditions in cargo compartments
which can be occupied by
an aircrew.
Environment extremes of pressure,
temperature, shock and vibration are minimal.
Examples include long mission aircraft such as
the C130, C5,B52, and C141. This category
also applies to inhabited areas in lower
performance smaller aircraft such
as the T38.
Airborne, Inhabited,
Fighter
AIF
Same asAIC but installed on high performance
aircraft such as fighters and interceptors.
6, F111, FIA 18
Examples include the F15, F1
and A l O aircraft.
Airborne, Uninhabited,
cargo
AUC
Alm
AUB
Environmentally uncontrolled areas which
cannot be inhabited by an aircrew during flight.
Environmental extremes,of pressure,
temperature and shock may be severe.
Examples include uninhabited areas of long
mission aircraft such as the C130,
CS, B52 and
C141, This category also applies to
uninhabited areaof lower performance smaller
aircraft such as the T38.
Airborne,
Uninhabited,
Fighter
AUF
Same as AUC but installed on high performance
aircraft such as fighters and interceptors.
Examples include the F15, F16, F1 11 and A10
aircraft.
Airborne, Rotary
Winged
ARW
Equipment installed on helicopters. Applies to
both internally and externally mounted
equipment such as laser designators, fire
control systems, and communications
equipment.
Space, Flight
SF
Earth orbital. Approaches benign ground
conditions. Vehicle neither under powered
flight nor in atmospheric reentry; includes
satellites and shuttles.
Airborne,’lnhabited,
Cargo
. .
AIA
%A
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fable 3-2:
Environmental Symbol and Description(cont'd)
Equivalent
MIL-HDBKPl7E,
Notice 1
Environment
~~
% Symbol
Description
~
MR
Missile, Flight
M~~
Missile, Launch
ML
"SL
Severe conditions relatedto missile launch(air,
ground and sea), space vehicle boost into
orbit, and vehicle re-entry andlanding by
parachute. Also applies to solid rocket motor
propulsion powered flight, and torpedo
and
missile launch from submarines.
CL
Extremely severe conditions related to cannon
launching of 155 mm. and 5 inch guided
projectiles. Conditions apply.to the projectile
from launch to target impact.
* . .
Cannon, Launch
Conditions relatedto powered flight of air
breathing missiles, cruise missiles, and
missiles in unpoweredfree flight.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
-
3 . 4 . 4 Part Failure Rate Models Part failure rate models for microelectronic parts are significantly
different from those for other parts and are presented entirely in Section 5.0. A typical example of the
type of model used for most other part typesis the following one for discrete semiconductors:
.
~~=%XT~AXR~S~C"QXE
where:
hp
isthepartfailurerate,
hb
is the base failure rate usually expressedby a model relating the influence of electrical and
temperature stresseson the part,
XE
and the other X factors modify the base failure rate for the category of. environmental
application and other parameters that affect the part reliability..
The zE and zQ factors are used in most all models and otherIC factors apply onlyto specific models. The
applicability of x factorsis identified in each section.
The base failure rate (hb) models are presented in each part section along with identification of the
applicable model factors. Tables of calculated+., values are also provided for use
in manual calculations.
The model equations can, of course, be incorporated into computer programsfor machine processing.
The tabulated values of are cut off at the part ratings with regard to temperature and stress, hence, use
of parts beyond these cut off points will overstress the part. The use of the hb models in a computer
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INTRODUCTION
program should take the part rating limits into account. The
At, equations are mathematically continuous
the overstressed regions.
beyond the part ratings but such failure rate values are in
invalid
All the part models include failure data from
both catastrophic and permanent drift failures
(ems.,a resistor
permanently falling out of rated tolerance bounds) and are based upon a constant failure rate, except for
of parts into
motors which showan increasing failure rate over time. Failures associated with connection
circuit assemblies are not included within the part failure rate models. Information
on connection reliability
is provided in Sections 16 and 17.
-
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
3.4.5 Thermal Aspects The use of this prediction methodrequires the determination of the
temperatures to which the parts are subjected. Since parts reliability is sensitive to temperature, the
thermal analysisof any design should fairly accurately provide the ambient temperatures needed
in using
the part models. 01course, lower temperatures produce better reliability but also
can produce increased
penalties in terms of added loads on the environmental control system, unless achieved through
improved thermal design of the equipment. The thermal analysis should be partof the design process
and included in all the trade-off studies covering equipment performance, reliability, weight, volume,
environmental control systems, etc. References17 and 34 listed in Appendix C may be usedas guides in
determining component temperatures.
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RELIABILITY ANALYSIS EVALUATION
Table 4-1 provides a general c m t to be used as a gui& for evaluating a reliability prediction report.
For completeness, the checklist includes categories for reliability modeling and allocation, which are
sometimes delivered as part of a prediction report. It should be noted that the scope of any reliability
analysis depends on the specific requirements called out in a statement-of-work (SOW) or system
specification. The inclusion of this checklist is not intended to change the scope of these requirements.
Table 4-1:
Major Concerns
Re1 bllityAnalysisChecklist
dODELS
Are all functional elements includedin the
reliability block diagram /model?
Comments
System design drawings/diagrams must be reviewed to
be sure thatthe reliability model/diagram agrees with
the
hardware.
Are all modes of operation consideredin the
mathnmdel?
Duty cydes, alternate paths, degraded conditions and
redundant units mustbe defined and modeled.
Do the math model results show that the design Unit failure ratesand redundancy equations are used
from the detailed part predictions
in the system math
achieves the reliability requirement?
model (See MIL-STD-756, Reliability Prediction and
Modeling).
4LLOCATION
.
Are system reliability requirements allocated
(subdivided) to useful levels?
Useful levels are defined as: equipment for
subcontractors, assemblies for sub-subcontractors,
circuit boards for designers.
Does the allocation process consider
complexity, design flexibility, and safety
margins? .
Conservative values are needed to prevent reallocation
at every design change.
PREDICTION
Does the sum of the parts equal the value of
the moduleor unit?
Many predictions neglectto include all the parts producing
optimistic results (check for solder connections,
connectors, circuit boards).
Are environmental conditions and part quality
representative
the
of
requirements?
Optimistic quality levels and favorable environmental
conditions are often assumed causing optimistic results.
Are the circuit and part temperatures defined
and do they represent the design?
Temperature is the biggest driver of part failure rates:
low temperature assumptions will &use optimistic
results.
Are equipment, assembly, subassembly and
part reliability drivers identified?
Identification is neededso that corrective actions for
reliability improvement can be considered.
Are alternate (Non MIL-HDBK-217) failure rates
highlighted along with the rationale for
their.
use?
Use of alternate failure rates, if deemed necessary,
require submission of backupdata to provide credencein
the values.
Is the levelof detail for thepart failure rate
Each component type should
be sampled and failure
rates completely reconstructed for accuracy.
Are critical components such as VHSIC,
Monolithic Microwave Integrated Circuits
(MMIC), Application Specific Integrated
Circuits (ASIC) or Hybrids highlighted?
Prediction methods for advanced technology parts should
be carefully evaluated for impacton the module and
system.
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models sufficient to reconstruct the result?
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5.0
MICROCIRCUITS, INTRODUCTION
This section presents failure rate prediction
models for the followingten major classes of microelectronic
devices:
Section
5.1
MonolithicBipolarDigitalandLinearGate/LogicArrayDevices
5.1
MonolithicMOSDigitalandLinearGatenogicArrayDevices
5.1MonolithicBipolarand
MOS DigitalMicroprocessorDevices
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
5.2MonolithicBipolarandMOSMemoryDevices
5.3
VeryHighSpeedIntegratedCircuit(VHSICNHSIC-LikeandVLSI)CMOSDevices
Gates)
5.4
Monolithic
GaAs
Digital
Devices
5.4
Monolithic GaAs MMlC
5.5
Hybrid
Microcircuits
5.6
Surface
Acoustic
Wave
Devices
5.7
Magnetic
Bubble
Memories
(> 60K
In the title descriptionof each n&nolithic device type, Bipolar representsall TTL, ASTTL, DTL, ECL, CML,
ALSTTL, HlTL, RTL, F, LTTL, STTL, BiCMOS, LSTTL, IIL, 13L and ISL devices. MOS represents all
metal-oxide microcircuits, which includes NMOS,PMOS,CMOS and MNOS fabricated on various
substrates such as sapphire, polycrystalline or single crystal silicon. The hybrid model is structured to
accommodate all of the monolithic chip device types and various complexity levels.
Monolithic memory complexity factors are expressed
in the number of bits in accordance with JEDEC STD
21A. This standard, which is used by all government and industry agencies that deal with microcircuit
memories, states that memories of 1024bits and greater shallbe expressed as K bits,. where 1 =K1024
bits. For example, a 16K memory has 16,384 bits, a 64K memory has 65,536
bits and a 1M memory has
1,048,576 bits. Exact numbersof bits arenot used for memories of 1024 bits and greater.
For devices havingboth linear and digital functionsnot covered by MIL-M-38510 or MIL-1-38535, use the
linear model. Line drivers and line receivers are considered linear devices. For linear devices not covered
by MIL-M-38510 or MIL-1-38535, use the transistor count from the schematic diagramof the device to
determine circuit complexity.
For digital devices not covered by MIL-M-38510or MIL-1-38535, use the gate count as determined from
an LSI circuit. For the
the logic diagram. A J-K or R-S flip flop is equivalent to 6 gates when used as ofpart
purpose of this Handbook, a gate is considered to be any one of the following functions: AND, OR,
exclusive OR, NAND, NOR and inverter. When alogic diagram is unavailable, use device transistor count
to determine gate count using the following expressions:
Technoloav
Bipolar
CMOS
All other MOS except CMOS
No. Gates= No. Transistors/3.0
No. Gates= No. Transistors/4.0
No. Gates = No. Transistors/3.0
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A detailed form of the Section 5.3 VHSICNHSIC-Like model is included as Appendix B to allow more
detailed trade-offs to be performed. Reference 30 should be consultedfor more information about this
model.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Reference 32 should be consulted for more information about the models appearing in Sections5.1, 5.2,
5.4,5.5, and 5.6. Reference 13 should be consulted for additional information on Section 5.7.
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5.1
MICROCIRCUITS,
GATE/LOGIC
ARRAYS
AND
MICROPROCESSORS
DESCRIPTION
1. Bipolar Devices, Digital and Linear Gate/Logic Arrays
2. MOS Devices, Digital and Linear Gate/Logic Arrays
3. Field ProgrammableLogicArray(PLA)and
Programmable Array Logic (PAL)
4. Microprocessors
h = ( C 1 q + C27tE) X Q ~ LFailures/lO 6 Hours
P
-
r-
Digital and Linear Gate/Logic Array Die Complexity Failure Rate Cl
Digital
No. Gates
1
101
1,001
3,001
10,001
30,001
C1
to
100
t o 1,000
t o 3,000
t o 10,000
t o 30,000
t o 60,000
.o025
.O050
.o1 o
.o20
Linear
No. Transistors
1
101
301
1,001
to
100
to
300
t o 1,000
t o 10,000
PLA/PAL
No. Gates
C1
.o1 o
.o20
C1
.o1o
.o2 1
,042
u p to 200
201 to 1,000
1,001 to 5,000
.O40
.O60
.O40
.O80
-
MOS Linear and Digital Gate/Logic Array Die Complexity Failure Rate Cl*
Digital
No. Gates
C1
.o1 o
.o20
100
1 to
101 t o 1,000
1,001 t o 3,000
3,001 t o 10,000
10,001 t o 30,000
t o 60,000
.O40
.O80
Linear
No. Transistors
1
101
301
1,001
to
100
to
300
t o 1,000
t o 10,000
PLA/PAL
No. Gates
C1
Up to 500
501 to 1,000
2,001 to 5,000
5,001 to 20,000
.o10
.o20
,040
.O60
C1
.O0085
.O017
.0034
.0068
.16
.2930,001
*NOTE: For CMOS gate counts above 60,000 use the VHSICNHSIC-Like model in Section 5.3
All Other Model Parameters
Parameter
Refer to
MicroDrocessor
Die Complexity Failure Rate - Cl
Bipolar
No. Bits
MOS
C1
Up to 8
.O60
.14
c2
Up to 16
.12
.28
XE, ~
Up to 32
.56
Section 5.9
Q
I
XL
Section 5.1 O
.24
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C1
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5.2
MICROCIRCUITS, MEMORIES
DESCRIPTION
ReadOnlyMemories(ROM)
Programmable Read Only Memories (PROM)
UltravioletEraseablePROMs(UVEPROM)
"Flash,"MNOSandFloatingGate
Electrically
EraseablePROMs(EEPROM).Includes
both
floating gate tunnel oxide (FLOTOX) and textured
polysilicon type EEPROMs
5. StaticRandomAccessMemories (SRAM)
6. Dynamic Random Access Memories (DRAM)
1.
2.
3.
4.
hp = (C1 XT + C2 X E
+ hcyc) XQ
XL
Failures/106 Hours
Die Complexity Failure Rate- C,
MOS
Memory Size, B (Bits)
ROM
PROM,
UVEPROM,
EEPROM,
EAPROM
DRAM
ROM,
SRAM
PROM
3 .O0085
.O078 .O01 .O094
.O052
.O025 .O01 .O1 6
.o1 9
.o1 1
.O050
.O38 .O31 .o21
.o1 o
.O42 .O75 .O62
.O0065
.o01 3
7
.O026 64K .O034
.O052 256K .O068
Up to 16K
16K < B 5 64K
< B S 256K
cBI1M
Bipolar
SRAM
(MOS &
BiMOS)
I
A2 Factor for hcyc Calculation
Total No. of
Programming Cycles
Textured-Poly A2
Over EEPROM Life, C
A, Factor for kc c Calculation
Total No. of
Programming
Cycles Over
EEPROMLife, C
T+
Flotoxl
TexturedPoly2
.O0070
.O01 4
.O034
.O068
.o20
.O49
.1o
.14
.20
.68
1.3
2.7
3.4
.O097
.O1 4
.O23
.O33
.O61
.14
.30
.30
.30
.30
.30
.30
.30
Up to 300K
u p to 100
100 c c 5 200
200 < C S 500
500cC51K
1K<C13K
3K c C S 7K
7K<CI15K
15K C 5 20K
20K c C I 30K
30K C 5 100K
lOOK < C S 200K
200K C 5 400K
400K < C I500K
(C)
1. A, = 6.817 X
2. No underlying equation for TexturedPoly.
O
300K < C S 400K
1.1
400K c C I500K
2.3
All Other Model Parameters
Parameter
I
Refer to
I
I
1
1
*T
XE,
XQI XL
hcyc(EEPROMS
only)
hcyc= O
I
Section 5.8
Section 5.9
Section 5.1O
Page 5-5
For all otherdevices
5-4
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1
MIL-HDBK-217F
CHG
NOTICE 2
9999970 Ol19703b T38 W
MIL-HDBK-217F
NOTICE 2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
5.2
MICROCIRCUITS, MEMORIES
-
EEPROM ReadlWrite Cycling Induced Failure Rate
kYc
I
-
k y c=O
All Memory Devices Except Flotox and
Textured-Poly EEPROMs
Flotox and Textured Poly EEPROMs
A1
B1
A2
B2
&=[AI
Flotox
Page 5-4
Page 5-6
Az=O
BZ=O
Section 5.10
B1
+
ed-Pdy
Page 5-4
Page 5-6
Page 5-5
Page 5-6
Section 5.10
Error Correction Code (ECC) Options:
1. No On-Chip ECC
2. On-Chip Hamming Code
3. Two-Needs-One
Redundant Cell Approach
NOTES:
i . See Reference24 for modelingoff-chip error detection and correction
schemes at the memory system level.
2. If EEPROM type is unknown, assume Flotox.
3. Error Correction Code Options:Some EEPROM manufacturers have incorporated
on-chip error correction circuitry into
their EEPROM devices. This is representedb)
the on-chip hamming codeentry. Other manufacturers havetaken a redundantcell
in every memory cell. This
approach which incorporates an extra storage transistor
is represented by the two-needs-one redundantcell entry.
4. The Ai and A2 factors shownin Section 5.2 were developed based on an assumec
system life of 10,000 operating hours. For EEPROMs used in systems with
significantly longer or shorter expected lifetimes
the Al and A2 factors should be
multiplied by:
System Lifetime Operating Hours
10,000
page
Supersedes
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5-5
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CHG NOTICE 2
= 9999970
0397037 974
MIL-HDBK-217F
NOTICE 2
5.2
MICROCIRCUITS, MEMORIES
lY
-
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c
5-6
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L
MIL-HDBK-ZL7F
NOTICE
RE
9999970 007bOq3 T
MIL-HDBK-217F
NOTICE 1
5.3
MICROCIRCUITS,
VHSICNHSIC-LIKE
AND VLSl
CMOS
DESCRIPTION
CMOS greater than60,000 gates
Die Base Failure Rate-
I
Part Type
All Other Model Parameters
i
Refer to
Parameter
]
Logic and Custom
Gate Array and Memory
Section 5.8
Section 5.10
%T
0.16
0.24
"Es
Package Type Correction Factor- npT
55
2.0
QML or QPL
Non QMLor Non QPL
*
I
1
1
Packane Type
(Microns)
.8O
1.o0
I
xCD=
I
((-&) (e-
I I i:! I
Pin Grid Array
Chip Carrier
(Surface Mount
Technolo nv)
DIP
2.2
4.7
1,O
Die Area (cm2)
. 7 c A <1I . O c A S22..00< A I 3 . 0
19
13
8.2
16
A I .4
8.0
5.2
3.5 1.25
.4 c A I .7
14
8.9
5.8
(.64))+ .36
A Total Scribed Chip Die Areaincm2
58
37
24
38
25
X, = Feature Size(microns)
P
I
Die AreaConversion:cm2 = MIL2 f 155,000
- ARP
Package Base Failure Rate
W .
Number of Pins
24
28
40
44
48
52
64
84
120
124
144
'B P
,0026
,0027
.O029
.O030
,0030
.O031
,0033
.O036
.O043
,0043
.O047
,0060
1
1
Die Complexity Correction Factor
- ICCD
Feature Size
ZPT
. .
Hermetic I Nonhermetic
-
ElectricalOverstress Failure Rate Acne
LUV
VTH (ESD Susceptibility (Volts))*
AEOS
0 - 1000
.065
> 1000 - 2000
.053
-
> 2000 4000
.044
> 4000 - 16000
VTH = ESD Susceptibility (volts)
Number of Package Pins
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-
Manufacturing Process Correction Factor ZMFG
Manufacturing
Process
I ~MFG
~
flIL-HDBK-217F
NOTICE
I RE
~
_
_
_
_
_
~
9799970 0 0 7 6 0 9 4 1
MIL-HDBK-217F
5.4
MICROCIRCUITS,GaAsMMlC
AND DIGITALDEVICES
DESCRIPTION
Gallium Arsenide Microwave Monolithic Integrated Circuit
(GaAsMMIC) and GaAs Digital Integrated Circuitsusing
MESFET Transistors andGold Based Metallization
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
M:Die Complexity Failure Rates Complexity
(No. of Elements)
-
Cl
Device Application Factor ITA
I
C1
Application
MMlC Devices
Low Noise & Low Power (I 100 mW)
Driver & High Power (> 100 mW)
Unknown
1 to 100
1 . Cl accounts for the following active
elements: transistors, diodes.
Digital Devices
Applications
DigitalAll
U:Die Complexity Failure Rates Complexity
1.o
Cl
Cl
(No. of Elements)
All Other Model Parameters
I
Refer to
Parameter
1 to 1000
1. Cl accounts for the following active
elements: transistors, diodes.
KT
Section 5.8
c2
Section 5.9
XE, XLI XQ
Section 5.1 O
5-8
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MIL-HDBK-217F
NOTICE 2
5.5
MICROCIRCUITS,
HYBRIDS
DESCRIPTION
Hybrid Microcircuits
,X, = [ Z Nc kc J (1 + .2 K E ) KF KQ ‘tL Failures/l O6 HOUE
Nc
=
LC
=
Number of Each Particular Component
Failure Rateof Each Particular Component
The general procedure for developing an overall hybrid failure rate
is to calculate an individual failure rate
for each component type used in the hybrid and then sum them. This summation is then modified to
account for the overall hybrid function (zF), screening level (W),and maturity (xL). The hybrid package
failure rate is a function of the active component failure modified by the environmental factor(¡.e., (1 + .2
zE) ). Only the component types listed in the following table are considered to contribute significantly to
the overall failure rate of most hybrids. All other component types (e.g., resistors, inductors, etc.) are
to have a failure
considered to contribute insignificantlyto the overall hybrid failure rate, and are assumed
rate of zero. This simplification is valid for most hybrids; however,if the hybrid consistsof mostly passive
components then a failure rate should be calculated for these devices. If factoring in other component
types, assume KQ = 1, X;E=1 andTA = Hybrid Case Temperaturefor these calculations.
Determination of h,Make These Assumptions When Determining
Handbook Section
Determine LCfor These
Component Types
AC
Microcircuits
5
C2 = O, KQ = 1, ZL = 1, TJ as Determined from
= O (for VHSIC).
Section 5.12,
Discrete Semiconductors
6
ZQ
= 1, xA = 1, TJ as Determined from Section
6.14, ICE= 1.
10
Capacitors
XQ
= 1, TA = Hybrid Case Temperature,
np=
I
NOTE:
1.
If maximum rated stress fora die is unknown, assume the same as for a discretely package
die of the same type. If the same die has several ratings based
on the discrete packaged
type, assume the lowest rating. Power ratingused should be basedon case temperature
for discrete semiconductors.
Circuit Function Factor- nF
Circuit Type
“F
Digital
1.o
Video, 10 MHz c f c 1 GHz
1.2
f > 1 GHz
Linear, f c 10 MHz
Power
5.10
Refer to Section
2.6 Microwave,
5.8
21
Supersedes page 5-9 of Revision F, Notice 1
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5-9
CHG N O T I C E 2
flIL-HDBK-2L7F
rn
q q q q q 7 0 0397039 7 4 7
MIL-HDBK-217F
5.6
MICROCIRCUITS, SAW DEVICES
DESCRIPTION
'SurfaceAcoustic Wave Devices
A., = 2.1 ZQ XE FailuresllO6 Hours
Environmental Factor -
TCQ
Screening Level
"Q
1O Temperature Cycles (-55°C
to
+125"C) with end point electrical
tests at temperature extremes.
.1o
None beyond best commerical
practices.
1 .o
E
Environment
"E
GB
.5
GF
2.0
GM
4.0
NS
4 .O
NU
6.0
AIC
4.0
AIF
AUC
5 .O
5 .O
AUF
8 .O
ARW
8 .O
.50
SF
5 .O
MF
ML
12
CL
220
5-1O
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-
Quality Factor
MIL-HDBK-217F
5.7
MEMORIES
MICROCIRCUITS,
MAGNETIC
BUBBLE
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
The magnetic bubble memory device in its present form is a non-hermetic assembly consisting of the
following two major structural segments:
1.
A basic bubble chip or die consisting of memory or a storage area (e.g., an array of minor
loops), and required control and detection elements (e.g., generators, various gates and
detectors).
2.
A magnetic structure to provide controlled magnetic fields consisting of permanent magnets,
coils, and a housing.
These two structural segments of the device are interconnected by a mechanical substrate and lead
frame. The interconnect substrate in the present technology is normally a printed circuit board. It should
be noted that this model does not include external support microelectronic devices requiredfor magnetic
bubble memory operation. The model
is based on Reference 33. The general form of the failure rate
model is:
hp = hl + h2
Failures/106 Hours
where:
X, = Failure Rate of the Control and Detection Structure
h,
= Failure Rateof the Memory Storage Area
I
-
Chips Per Package NC
I
NC
=
Number of BubbleChips per
Packaged Device
I
-
C11 =
.00095(N1).40
C21 =
.0001(N1)*226
N1
Number of DissipativeElements
on aChip (gates, detectors,
1000
generators, etc.), N1 I
I
I
Temperature Factor- "T
Document provided by IHS.
1
Device Complexity Failure Rates for Control and
Detection Structure C, .I and Ca,
Use:
Ea =
.8 to Calculate
Ea
=
55 to Calculate nT2
TJ
=
=
JunctionTemperature (OC),
25 I T J I 1 7 5
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-
MIL-HDBK-217F N O T I C E I RE
~____
7777970 0076078 7
MIL-HDBK-217F
NOTICE 1
MICROCIRCUIT,
MAGNETIC
BUBBLE MEMORIES
Write Duty Cycle Factor- nW
Device Complexity Failure Rates for Memory
Storage Structure- C12 and CZ2
1. OD
”
“W
=
-
“W
=
1
D
=
Avq. Device Data Rate
“
Mfg. Max. Rated Data Rate
WW =
( R N ).3
C12 =
.00007(N2)*3
c22 =
.00001(~~)~3
N2
Number of Bits, N2 I 9 x
for D I.O3or R/W 2 2154
NOTE:
For seed-bubble generators, divide
nw by 4, or use 1, whicheveris
Ireater.
5-12
Document provided by IHS.
Avg. Device Data Rate
Mfg. Max. Rated Data Rate
I
I
Duty Cycle Factor- “D
=
lo6
All Other Model Parameters
Parameter
Section
c2
D
=
No. of ReadsperWrite
5.9
5.10
I,
Supersedes page 5-12 of Revision F
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5.7
MIL-HDBK-217F
NOTICE 1
5.8
0
1
I
I
I
I
I
MICROCIRCUITS,
KT
TABLE FOR ALL
Supersedes page 5-13 of Revision F
5-13
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-~
UIL-HDBK-ZL7F N O T I C E L RE
~~~
9799970 0 0 7 b L O O 3
MIL-HDBK-217F
5.9
MICROCIRCUITS,
Cp TABLE FOR ALL
Package Failure Rate for all Microcircuits - c2
.O0092
.O013
,0019
,0026
,0034
.O041
.O048
.O056
.O064
,0079
.O087
.o1o
.O13
.O 15
.O25
.O32
.O53
.O76
.O97
3
4
6
8
10
12
14
16
18
22
24
28
36
40
64
80
128
180
224
.O0047
.O0073
.O013
,0021
.O029
.O038
.O048
.O059
.O071
.O096
.o 1 1
.O14
.o20
.O24
.O48
.o0022
.O0037
.O0078
.O013
.o020
.O028
.O037
.O047
.O058
.O083
.O098
i
cans4
Nonhermetic:
DIPS, PGA,
SMT (Leaded
and
N~nleaded)~
i
.O0027
.O0049
.o01 1
,0020
.O031
.O044
,0060
.O079
.o01 2
.O01 6
.0025
.0034
.0043
,0053
.0062
,0072
.0082
.o1 o
.o1 1
.O13
.O17
,019
.032
.041
.068
.098
.i2
NOTES:
1.
SMT: Surface MountTechnology
2.
DIP: Dualln-LinePackage
3.
If DIP Seal type is unknown, assume glass
4.
The package failure rate (C2) accounts for failures associated only withthe package itself.
to a circuit board are accountedfor in
Failures associatedwith mounting the package
Section 16, Interconnection Assemblies.
5-14
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Number of
Functional
Pins, Np
Package Type
Hermetic: DlPs
I
w/Solder or
Weld Seal, Pin DlPs with Glass Flatpacks with
Grid Array
Axial Leads on
Seal2
150 Mil Centers3
( P G A ) ~SMT
,
(Leaded and
Nonleaded)
MIL-HDBK-217F
RE
9999970 0070728 8
MIL-HDBK-217F
5.10
MICROCIRCUITS, ZE, AL AND
Environment Factor- ICE
Environment
.F
"E
50
2.0
4.0
4.0
6.0
4.0
5.0
5.0
8.0
8.0
SO.
5.0
12
220
GM
NS
NU
AIC
AIF
AUC
*U.F
. ARW
SF
MF
ML
CL
..
I
nL = .O1 exp(5.35 - ,35Y)
- zc
"L
2.0
1.8
1.5
1.2
I
1 .o
"Q
Glass S Cateaories:
1:
Procured in full accordance
O, Class S
with MIL-M-3851
requirements.
2.
Procured in full accordance
with MIL-1-38535 and
Appendix B thereto (Class U).
.25
Class R Cateaories;
1.
Procuredin full accordance
with MIL-M-38510, ClassB
requirements.
1.o
3.Hybrids:Procured
to Class B
requirements (Quality Level
H) of M1L.H-38534.
I
-
Y = Years generic devicetype has been
in production
I
Quality Factors
Description
2.Procured
in full accordance
with MIL-1-38535, (ClassQ).
I
~..1
I
TABLES FOR ALL
3.Hybrids:(Procured
to Class
S requirements (Quality Level
K) of MIL-H-38534.
-
Learning Factor "L
Years in Production, Y
.5
1 .o
1.5
2 2.0
ZQ
1
Glass ß-1 CategpIy;
Fully compliant with all
requirements of paragraph 1.2.1
of MIL-STD-883 and procuredto a
or
MIL drawing, DESC drawing
other government approved
documentation. (Does not include
hybrids), For hybrids use custom
screening section below.
2.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
5-15
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MIL-HDBK-217F
RE
9 9 9 9 9 7 0 0070729 T
. MIL-HDBK-217F
MICROCIRCUITS, ZE,ZL AND
5.10
ZQ
TABLES FORALL
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
m
Qualii Factors (cont'd): len Calculation for Custom Screening Pro!
Group
1.
2'
3
s
Point Valuation
ior Hybrids) (FinalElect&als @ Temp Extremes) and TM1014
(Seal Test,Cond A, B, or C) and TM 2009 (Extemal Visual)
TM 101O (Temwrature Cycle, Cond B Minimum) or TM 2001
(Constant' Acceleration,Cond B Minimum)
TM 5004 (or 5008 for Hybrids) (Final Electricals
@ Temp Extremes)
and TM 1014 (Seal Test, CondA, B, or C) and TM2009 (External
Visual)
Pre-Bum in Electricals
TM 1015 (Burn-in B-LeveVS-Level) and TM 5004 (of 5008 for
Hybrids) (Post Bum-in Electricals
@ Temp Extremes)
50
TM 2820 Pind(ParticleImpactNoiseDetection)
11
.
37
36
6
TM 2010/17 (InternalVisual)
7
7.
TM 1014 (Seal Test, Cond A, B, or C)
7
TM 2012 (Radiography)
7
TM 2009 (ExtemalVisual)
7
10
TM 5007/5013 (GaAs) (Wafer Acceptance)
1
11
TM 2023 (Non-Destructive Bond Pull)
1
.
(Note 1)
11
TM 5004 (or 5008 for Hybrids) (Final Electncals
@ Temperature
Extremes)
ZQ=2+
Level)
(B
(S Level)
30
(Note 2)
(Note 2)
89
Point
Valuations
'NOT APPROPRIATE FOR PLASTIC PARTS.
NOTES:
1 . Point valuation only assigned
if used independent of Groups 1, 2 or 3.
2. Point valuation only assigned
if used independentof Groups 1 or 2.
3. Sequencing of tests within groups1, 2 and 3 must be followed.
4. TM refers to the MIL-STD-883 Test Method.
5. Nonhermetic parts shouldbe used only in controlled environments(Le., GB and other
temperature/humidity controlled environments).
EXAMPLES:
87
+ 50+30
1.
Mfg. performs Group 1 test and Class B bum-in:
2.
Mfg.performsinternalvisualtest,sealtestandfinalelectricaltest:
XQ
=2
= 3.1
RQ = 2 +
87
7+7+1
= 5.5
I
Other Commercialor Unknown Screening Levels
I
ZQ =
10
5-16
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’
MIL-HDBK-217F
RE
m 9999970 0070730
b
m
MIL-HDBK-217F
MICROCIRCUITS, TJ DETERMINATION, (ALL EXCEPT HYBRIDS)
5.11
Ideally, device case temperatures should be determined from a detailed thermal analysis of the
equipment. Device junction temperatureis then calculated with the following relationship:
TJ
=
Worst CaseJunctionTemperature(“C).
TC
=
Case Temperature (“C). If not available, use the following default table.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Defautt Case Temperature(Tc) for all Environments
I
Tc(OC)
I 35
=
45
Dual-ln-Line
Flat Package
Chip Carrier
Pin GridArray
Can
Document provided by IHS.
=
I 45
50
I 60
60
75
75
60
I 35
50
60
45
Junctionto-case thermalresistawe (OCrWatt) for a device soldered into a printed circuit
board. If eJJc is pot available, use a value contained
in a specification for
the closest
equivalent deviceor use .the following table.
Package Type
(Ceramic Only)
P
50
Die Area> 14,400 mi12 eJC
(W
11
10
10
10
-
.
28
22
26
20
70
The maximum power dissipation realized in a system application. If the applied power is
not available, use the maximum power dissipation from the specification
for the closest
equivalent device.
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MIL-HDBK-237F R E
m
9999970 0070733 B
m
MIL-HDBK-217F
5.12
MICROCIRCUITS, TJ DETERMINATION, (FOR HYBRIDS)
This section describes a method for estimating junction temperature (TJ) for integrated circuit dice
mounted in ahybrid package. A hybrid is normally made up of oneor more substrate assemblies mounted
or thin
within a sealed package. Each substrate assembly consists of active and passive chips with thick
film metallization mountedon the substrate, which in turn may have multiple layers of metallization and
dielectric on the surface. Figure
substrate.The
5-1 is a cross-sectional view of a hybrid -with a single multi-layered
layers within the hybrid aremade up of various materials with different thermal
characteristics. The table following Figure 5-1 provides a list of commonly used hybrid materials with
typical thicknesses and corresponding thermal conductivities
(K). If the hybrid internal structure cannot be
. determined, use the following default values for the temperature rise from case to junction: microcircuits,
10°C;transistors, 25°C; diodes, 20°C. Assume capacitors areBt Tc.
CHIP (A)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
SUBSTRATE (D)
PACKAGE
CASE (F)
Figure' 5-1:
Cross-sectional View of a Hybrld with a Slngle Multl-Layered Substrate
c
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II RE m 9 9 9 7 9 7 0 007bLOL 5
MIL-HDBK-217F
NOTICE 1
Typical Hy! id Characteri CS
Thermal
Conductivity,
Material
Typical Usage
Typical
Thickness,
Li (in.)
Feature
From Figure
5-1
Ki
(%)
lin* WW)
2.20
,0045
Silicon
Chip Device
0.01 o
A
GaAs
Chip Device
0.0070
A
Au Eutectic
Chip Attach
0.0001
B
6.9
.o00014
Solder
Chip/Substrate Attach
0.0030
B/E
1.3
.O023
Epoxy (Dielectric)
Chip/Substrate Attach
O. 0035
B/E
Epoxy (Conductive)
Chip Attach
0.0035
Thick Film Dielectric
Glass Insulating Layer
Alumina
.76
.O092
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.O060
,58
B
-15
.O23
0.0030
C
.66
.O045
Substrate, MHP
0.025
D
.64
,039
Beryllium Oxide
Substrate, PHP
0.025
D
Kovar
Case, MHP
0.020
F
Aluminum
Case, MHP
0.020
F
4.6
.O043
Copper
Case, PHP
0.020
F
9.9
,0020
.42
.O038
.O48
P
NOTE: MHP: Multichip Hybrid Package, PHP: Power Hybrid Package (Pwr:
TC
2 2W, Typically)
n
P
Number of Material
Layers
Ki
=
ThermalConductivity of thMaterial
Li
=
Thickness of thMaterial(in)(UserProvided or FromTable)
A
=
Die Area (in2). If Die Area cannot be readily determined, estimate as follows:
A = [ ,00278 (No.of Die Active Wire Terminals)+ .041q2
(E)
(UserProvided or FromTable)
= Hybrid Case Temperature (OC). If unknown, use the TC Defautt Table shown in Section 5.1 1.
8JC = Junction-to-Case Thermal Resistance (“Cm
PD = DiePowerDissipation (W)
Supersedes
page
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6.6
(As determined above)
5-19 of Revision F
5-19
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MIL-HDBK-ZL7F
~
"
%
N O T I C E L RE
9977970 0076102 7
MIL-HDBK-217F
5.13
MICROCIRCUITS,
EXAMPLES
Example 1: CMOS DlgltalGateArray
Given:
A CMOS digital timing chip (4046) in an airborne inhabited cargo application, case temperature
48OC, 75mW power dissipation. The device is procured with normal manufacturer's screening
consisting of temperature cycling, constant acceleration, electrical testing, seal test and external
visual inspection, in the sequence given. The component manufacturer also performs a B-level
to the applicable MILburn-in followed by electrical testing. All screens and tests are performed
STD-883 screening method. The packageis a 24 pin ceramic DIP with a glass seal. The device
has been manufacturedfor several years and has 1000 transistors.
c,
=
.o20
1O00 Transistors = 250 Gates, MOSC, Table, Digital Column
"T
=
.29
Determine TJ from Section 5.11
TJ = 48OC + (28"C/W)( .075W)= 50°C
Determine "T from Section 5.8, DigitalMOS Column.
Section 5.9
Section 5.1 O
Group 1 Tests
Group 3 Tests
(B-level)
TOTAL
50 Points
aQedm
80 Points
87
I C Q = ~ + - = 3.1
80
"L
=
Section 5.1O
1
hp = [ (.020)(.29) + (.Oll) (4)] (3.1)(1) = .15 Failure/106 Hours
Example 2:
Given:
EEPROM
A 128K Flotox EEPROM that is expected to have aTJ of 80°C andexperience 10,000
read/write cycles over the life of the system. The part is procured to all requirements of
in
Paragraph 1.2.1, MIL-STD-883,Class B screeninglevelrequirementsandhasbeen
production for three years. It is packaged in a 28 pin DIP with a glass sealand will be usedin an
airborne uninhabited cargo application.
tcp = (C1 XT + C2 XE + Awe)
C1
XT
C2
=
=
=:
.O034
3.8
.O14
XL
Section 5.2
5.2
Section
Section 5.8
Section 5.9
5-20
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Section 5.10
. .
MIL-HDBK-217F
5.13
ICE
'
=
"L
Section 5.1 O
Section 5.10
Section 5.10
Section 5.2:
5.0
2.0
1.0
.38
"Q
=
hcyc =
MICROCIRCUITS, EXAMPLES
= B2 = O for Flotox
Assume NO ECC, XECC = 1
Al ='.1 , 7K IC 5 15K Entry
i at bottom of B1 and B2 Table)
B1 = 3.8 (Use Equation
Acvc A1B1(.1)(3.8)
= .38
3p = [ (.0034)(3.8) + (.014)(5.0) + .38] (2.0)(1) = .93 Failures/106 Hours
Example 3: GaAs MMlC
A MA4GM212 Single Pole Double Throw Switch, DC - 12 GHz, 4 transistors, 4 inductors, 8
resistors, maximum input PD
= 30 dbrn, 16 pin hermetic flatpack, maximum TCH
= 145OC in a
ground benign environment. The part has been manufactured
for 1 year and is screenedto
Paragraph 1.2.1 of MIL-STD-883, Class B equivalent screen.
% = [ C1n-p~+ C p E I X L ~ Q
'
c1
=
4.5
XT
=
=
.O61
3.0
.O047
.50
1.5
2.0
"A
C2
S.
'FE
=
"L
=
KQ
=
%=
[(4.5)(.061)(3.0)
Section 5.4
Section 5.4, MMlC Table, 4 Active Elements (See Footnote
to
Table)
Section 5.8, TJ= TCH = 145°C
Section 5.4, Unknown
Application
Section 5.9
Section 5.1 O
Section 5.1 O
Section 5.10
+ (.0047)(.5)]
(1.5)(2.0) = 2.5 Failures/106 Hours
NOTE: The passive elements are assumed
to contribute negligiblyto the overall device failure
rate.
Example 4:
Given:
Hybrid
A linear multichip hybrid driverin a hermetically sealed Kovar package. The substrate is alumina
and there are two thick film dielectric layers. The die and substrate attach materials are
conductive epoxy and solder, respectively. The application environment is naval unsheltered,
in production for overtwo years. The device is
65OC case temperature and the device has been
5-21
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Given:
MIL-HDBK-217F
MICROCIRCUITS, EXAMPLES
5.13
screened to MIL-STD-883, Method5808, in accordance with TableVIII, Class B requirements.
The hybrid contains the following components:
Active Components:
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
1.
1
1
2
2
2
Passive Components:
2
17 .
-
-
-
LM106 BipolarComparator/BufferDie (13 Transistors)
LM741ABipolarOperationalAmplifierDie (24 Transistors)
Si NPN
Transistor
Si PNP
Transistor
Si General PurposeDiodes
Ceramic
Chip
Capacitors
Thick Film Resistors
Estimate Active Device Junction Temperatures
If limited informationis available on the specific hybrid materials and'construction characteristics
in the introductionto Section 5.12 can be
the default case-to-junction temperature rises shown
used. When detailed information becomes available the following Section 5.12 procedure
should be used to determine the junction-to-case(eJC) thermal resistance and TJ values for
.
each
component.
(Equation 1)
Layer
Figure 5-1 Feature
Silicon Chip
A
Conductive Epoxy
B
Two Dielectric Layers
.O045
'
.O23
=
(2)(.0045) C
.o09
Alumina Substrate
D
,039
Solder Substrate Attachment
E
.O023
Kovar Case
F
948
.1258
A
=
TJ =
Document provided by IHS.
Die Area = [ .O0278 (No, Die Active Wire Terminals)
TC+~JCPD
+ .O4172
(Equation 2)
(Equation
3)
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MIL-HDBK-217F
NOTICE 2
5.13
No. of Pins
MICROCIRCUITS, EXAMPLES
LM 106
LM741A
Si NPN
Si PNP
Si Diode
8
14
3
3
2
Source
Vendor Spec. Sheet
Power Dissipation,
(W)
.33
.35
.6
.6
.42
Circuit Analysis
Area of Chip (in.2)
.O041
.O065
.O025
.O025
.o022
Equ. 2 Above
eJC
rCw
TJ ("c)
2.
30.8
19.4
50.3
50.3
56.3
Equ. 1 Above
75
72
95
95
89
Equ. 3 Above
CalculateFailureRatesforEachComponent:
A) LM1 06 Die,13 Transistors (from Vendor Spec. Sheet)
X T +%
c 2=X
[ cE1l X Q n L
Section 5.1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Because C2 = O;
hp = C1 XTZQ XL
=
XT: Section 5.8; X Q , XL Default to 1.O
(.01)(3.8)(1)(1) = .O38Failures/106Hours
B) LM741 Die, 23 Transistors. Use Same Procedure as Above.
kp =
Cl
XTXQ XL =
(.01)(3,1)(1)(1) = .O31 Failures/106 Hours
C) Silicon NPN Transistor, Rated Power = 5W (From Vendor Spec. Sheet),VCENCEO
=
.6,
Linear Application
hp =
% P T ~ A X R ZSXQXE
Section
6.3;
=
(.00074)(3.9)(1.0)(1.8)(.29)(1)(1)
=
.O015 Failures/106 Hours
XA, X Q , XE DefauR
to
1.O
D) Silicon PNP Transistor, Same as C.
Xp =
.O015Failures/106Hours
E) Silicon General Purpose Diode (Analog), Voltage Stress= 60%, Metallurgically Bonded
Construction.
hp =
=
=
V T X S xc
XQXE
Section
6.1
: XQ, XE Default
to
Supersedes page 5-23of Revision F
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1.O
(.0038)(6.3)(.29)(1)(1)(1)
.O069Failures/106Hours
5-23
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VIL-HDBK-217F
9997970 OL7704L 3T5
CHG N O T I C E 2
MIL-HDBK-217F
NOTICE 2
5.13
MICROCIRCUITS, EXAMPLES
F) Ceramic Chip Capacitor, Voltage Stress = 50°/0,
TA = TCASE forthe Hybrid, 1340 pF, 125°C Rated Temp.
Ap
hbXCVRQ5CE
(.0028)(1.4)(1)(1)
.O039 Failures/106Hours
=
=
=
Section 1O. 11; K Q , ICEDefault to 1.O
G) Thick Film Resistors, per instructionsin Section 5.5, the contribution of these devices is
considered insignificant relativeto the overall hybrid failure rate and they may
be ignored.
Section 5.10
Section 5.5
Section 5.10
Section 5.1 O
Ap
=
[ (1)(.038) + (1)(.031) + (2) (.0015) + (2)(.0015)
+ (2)(.0069) + (2)(.0039)](1 +
hp
=
.2(6.0)) (5.8)(1)(1)
1.2 Failures/l O6 Hours
Supersedes page 5-24of Revision F
5-24
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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MIL-HDBK-217F
6. O
DISCRETE SEMICONDUCTORS,
INTRODUCTION
The semiconductor transistor, diode and opto-electronic device sections present the failure rates
on
the basisof device type and construction. An analytical model
of the failure rate is also presentedfor each
device category. The various types of discrete semiconductor devices require different failure rate
models that vary to some degree. The models apply
to single devices unless otherwise noted. For
multiple devices ina single package the hybrid modelin Section 5.5 should be used.
The applicable MIL specification for transistors, and optoelectronic devices is MIL-S-19500. The
quality levels (JAN, JANTX, JANTXV) are as defined
in MIL-S-19500.
The temperature factor (ET) is based on the device junction temperature. Junction temperature
should be computed based on worse case power (or maximum power dissipation) and the device junction
to case thermal resistance. Determinationof junction temperatures is explainedin Section 6.14.
Reference 28 should be consulted for further detailed information on the models appearing in this
section.
6- 1
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MIL-HDBK-237F C H G N O T I C E 2
H 9799970 0397043 37B
MIL-HDBK-217F
NOTICE 2
6.1
DIODES, LOW FREQUENCY
SPECIFICATION
MIL-S-19500
DESCRIPTION
Low Frequency Diodes: General Purpose Analog, Switching,
Fast Recovery, Power Rectifier, Transient Suppressor, Current
Regulator, Voltage Regulator, Voltage Reference
h, = hbn Tn Sn Cn Qn E Failuredl O6 Hours
r
Base Failure RateDiode Type/Application
Temperature Factor - 9
I
(Voltage Regulator,Voltage Reference,
and CurrentRegulator)
‘b
1
.O038
,0010
.O25
General Purpose Analog
Switching
Fast Recovery Power Rectifier
Power Rectifier/Schottky
Power Diode
Power Rectifierwith
High Voltage Stacks
Transient SuppressorNaristor
Current Regulator
Voltage Regulator and Voltage
Reference (Avalanche
and Zener)
.O0501
Junction
.O013
.O034
,0020
Temperature Factor - zT
(General Purpose Anak , Switching, Fast Recovery,
PC
mient supe ssor)
TJ (“c)
zT
T J (“C)
nT
105
110
115
120
125
130
135
140
145
150
155
160
165
170
1 75
9.0
10
11
12
14
15
16
18
20
21
23
25
28
30
1.o
1.2
1.4
1.6
1.9
2.2
2.6
3.0
3.4
3.9
4.4
5.0
5.7
6.4
7.2
8.0
25
30
35
40
45
50
55
60
65
70
75
ao
a5
90
95
1O0
=
TJ =
3091
(
1
TJ
+ 273 -
1.o
1.1
1.2
1.4
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
30
35
40
45
50
55
60
65
70
75
80
85
90
95
1O0
.O030
-I
J
=T
=
TJ (“c)
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
JunctionTemperature (“C)
L
32
1
)
E)
JunctionTemperature (“C)
I
6-2
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1
-
MIL-HDBK-217F
RE
9 9 9 9 9 7 0 0070740 9
MIL-HDBK-217F
DIODES, LOW FREQUENCY
6.1
r
-
Quality Factor- x
ElectricalStress Factor xs
Stress
"S
"
Transient Suppressor,
Voltage Regulator, Voltage
Reference, Current
Regulator
1.o
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
All Others:
V, 5 .30.
.3 e V, 5 .40
.4 V, 5 .50
.5 e V, 5.60
.6 V, 5 .70
.7 v, 5 .ao
.8 c v, 5.90
.9<vs51.00
0.054
0.1 1
0.19
O .29
O .42
0.58
0.77
1.o
Quality
"Q
JANTXV
0.7
JANTX
1 .o
JAN
2.4
Lower
5.5
Plastic
8.0
Environment Factor- zc
.Environment
KE
1 .o
1
L
6.0
For All Except Transient Suppressor, Voltage
Regulator, Voltage Reference, or Current
Regulator
zS = .O54
"s
=
v,
2.43
(V, I.3)
(.3¿
V, = Voltage Stress Ratio =
..vss 1)
Voltage Applied
Voltage Rated
Voltage is Diode Reverse Voltage
.
GM
9.0
9.0
NS
NU
19
AIC
13
AIF
29
AUC
'
20
.AUF-
43
ARW
24
.50
SF
I
-
Contact Consttuction Factor
Contact Construction
!
Metallurgically Bonded
Non-Metallurgically
Bonded
and1
Spring Loaded Contacts
v
"C
MF
14
ML
32
CL
320
i:
6-3
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DIODES, HIGH FREQUENCY (MICROWAVE,
6.2
RF)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
. DESCRIPTION
SPECIFICATION
MIL-S-19500
Si IMPATT;Bulk Effect, Gunn; Tunnel, Back: Mixer, Detector,
PIN, Schottky: Varactor, Step Recovery
Failures/l O6 Hours
Base Failure Rate -
I
Diode
Si IMPAlT (I 35 GHz)
.
Gunn/Bulk
Effect
Tunnel and Back (Including
Mixers, Detectors)
.22
.i8
.O023
.O081
PIN
Schottky Barrier (Including
Detectors) and Øoint Contact
(200 MHz s Frequency I 35 GHz)
Varactor and StepRecovery
TJ Cc)
70
75
80
85
90
95
1O0
-
1.o
1.l
1.3
1.4
. 1.6
1.7
1.9
2.1
2.3
2.5
2.8
3.0
3.3
3.5
3.8
4.1
.O27
.O025
.
2100
(
1.3
1.8
2.3
3.0
3.9
5.0
6.4
ao
a5
90
95
1O0
4.4
4.8
5.1
5.5
5.9
6.3
6.7
7.1
7.6
8.0
8.5
9.0
9.5
10
11
-
10
13
16
19
24
29
35
‘
105
110
115
120
125
130
135
140
145
150
155
160
165
170 .
1 75
.
42
50.
60
71
a4
99
120
140
160
1ao
21o
250
280
320
370
1
,
‘T
TJ
e x p [ 5 2 6T0J( + ! 2 7 3 - K ) )
=
JunctionTemperature (“C)
Application Factor
Application
Diodes
Control
Voltage
Varactor,
Diodes
All Other
1
TJ + 273
1.o
8.1
Multiplier Varactor,
1
T‘
105
110
. 115
120
125
130
135
140
145
150
155
160
165
1 70
1 75
25
30
35
40
45
50
.55
60
.65
70
75
’
Temperature Factor - zT
[All Types Ex pt I M P A T
TJ (“c)
’LT
25
30
35
40
45
50
55
60
65
TJ =
TJ (“c)
Temperature Factor- ”T
(IMF 1
TJ (“c)
7ct
T‘
- ICA
__
“A
.50
2.5
1.o
E))
JunctionTemperature (“C)
6-4
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’
.
RE M 9 9 9 9 9 7 0 0070742 2 M
MIL-HDBK-217F
. .
:
MI-HDBK-217F
6.2
DIODES, HIGH FREQUENCY (MICROWAVE, RF)
-
Quality Factor “Q
Power Rating
Rated Power, Pr (Watts)
PIN Diodes
Pr I 10
“R
Quality’
.50
JANTXV
10 < Pr I 100
1.3
100 < Pr S 1000
2.0
1000 < Pr 9 3000
2.4
1.o
All Other Diodes
PIN Diodes
K R = .326 &Pr)
All Other Diodes
nR
5:
(Schot
- .25
1 .O
r)
W
.50
JANTX
1.o
JAN
1.a
Lower
2.5
Plastic
-
For high frequency part classes not specified to
MIL-S-19500 equipment quality classes are
defined as devices meeting the same
requirements as MIL-S-19500.
- -
(All Types Except Sch, ky)
Quality
“Q
JANTXV
.50 .
1.o
JANTX
5.0
JAN
Environment Factor
Environment
GB
1.o
GF
2.0
GM
5.0
NS
4.0
NU
11
Lower
25
AIC
4.0
Plastic
50
*IF
5.0
AUC
?.O
For high frequency patt classes not specified to
MIL-S-19500 equipment quality classeq are
AUF
12
defined as devices meeting the same
requirements as MIL-S-19500.
ARW
16
.
MF
.50
9.0
ML
24
CL
250
6-5
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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“E
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ci
. .
NIL-HDBK-217F
RE
.
9999970 0070743 4
1
,
i
MIL-HDBK-217F
TRANSISTORS, LOW FREQUENCY, BIPOLAR
6.3
DESCRIPTION
NPN (Frequency 200 MHz)
PNP (Frequency c 200 MHz)
SPEClFlCATlON
MIL-S-19500
Failures/lO6 Hours
-
-h
Application Factor "A. .
Base Failure Rate
NPN
I
,00074
I.5
Amplification
Linear
. Switching
Temperature Factor
5ET
-I
-70
- KR
T J PC)
7ET
Power Rating Factor
Rated Power (Pr, Watts)
"
1.o
I .1
1.3
1.4
1.6
1.7
1.9
2.1
2.3
2.5
2.8
3.0
3.3
25
30
35
40
45
50
55
60
65
70
75
80
85
3.6
90
95
1O0
3.9
4.2
1
exp(-2114(
TJ =
105
110
115
120
125
130
135
140
145
150
155
160
165
1?O
175
Document provided by IHS.
4.5
4.8
5.2
5.6
5.9
6.3
6.8
7.2
7.7
. 8.1
8.6
9.1
9.7
10
11
-
'
"R
Pr< .1
.43
Pr = .5
.77
Pr = 1.0
1.o
Pr= 5.0
1.8
Pr = 10.0
2.3
Pr = 50.0
Pr = 100.0
Pr
500.0
.
4.3
5.5
10
1
TJ+273-=))
JunctionTemperature ("C)
6-6
I
I
Application
ZR = .43
ER
(P,)*37
Rated Power 5.1 W
Rated Power> .1W
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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1
MIL-HDBK-217F
6.3
-
Environment
Environment
Voltage Stress Factor ICS
Applied VCE/Rated VCEO
*S
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
o < vs I
.3
.4
.5
.6
.7
.8
'9
.3
<vs I .4
c v, I .5
V, I .6
V, 5 .7
c V, I .8
c V, I .9
c v, s 1.0
.li
.16
.21
. .29
.39
.54
.73
1.o.
TRANSISTORS, LOW FREQUENCY, BIPOLAR
.
GB
nE
1 .o
GF
6.0
GM
9.0
NS
9.0
NU
19
AIC
13
AIF
29
AUC.
exp (3.1(Vs))
ns
=
v,
= Applied
VCE / Rated VCEO
VCE
= Voltage, Collector to Emitter
,045
(O
V, I 1 .O)
Open
- XQ
Quality Factor
I
Document provided by IHS.
Quality
I
JANTXV
I
20
AUF
43
ARW
24
"F
14
ML
32
CL
320
i
.70
I
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004
10:42:07 MDT Questions or comments about this message: please call the Document
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.
50
SF
VCEO = Voltage, Collector to Emitter, Base
,
.
~
TRANSISTORS, LOW FREQUENCY, Si FET
6.4
DESCRIPTION
N-Channel and P-Channel Si FET (Frequency
5 400 MHz)
SPECIFICATION
MIL-S-19500
Failuredl O6 Hours
hp= hb7cT7tA7cQ7cE
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
-
-
Base Failure Rate &,Transistor Type
Application Factor ICA
Application
Rated
(Pr,
Output
Power)
I
.o1 2
MQSFET
JFET
.O045
AmplificationLinear
(Pr
. "A
1.5
W
Switching
SignalSmall
Temperature Factor
f J ("C)
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
1O0
ZT
TJ ?c)
ZT
1.o
1.1
1.2
1.4
1.5
1.6
1.a
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
3.9
4.2
1
*T
Power F E T ~
(Non-linear, P, 2 2w)
2.0
4.0
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
8.3
8.7
-
1
(-lg2'
(T~+273
-=))
50 <.Pr
C
%OW
0.0
,
10 Pr 2 250W
Environment FactorEnvironment
1
GB
'
GF
GM
NS
Xe
1 .o
6.0
9.0
9.0
Nu
19
AIC
13
AIF
29
AUC
20
Quality
AUF
43
JANTXV
ARW
24
JANTX
SF
TJ =
JunctionTemperature
-
Quality Factor 'CQ
I
-I
-70
JAN
Lower
Plastic
(OC)
.50
MF
14
ML
32
CL
320
6-8
Document provided by IHS.
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MIL-HDBK-2L7F RE W 9999970 0070746 T
MIL-HDBK-217F
.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
I
TRANSISTORS, UNIJUNCTION
6.5
DESCRIPTION
Unijunction Transistors
SPECIFICATION
MIL-S-19500
h, = hbnTnQnEFailures/l O6 Hours
-
- XQ
Base Failure Rate I+,
Quality Factor
Quality
JANTXV
_ .
Temperature Factor
T J ec)
TJ (Oc)
1.o
1.1
1.3
1.5
1.7
1,9
2.1
2.4
2.7
3.0
3.3
3.7
4.04.4
4.9
5.3
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
1O0
'T
I
.
I -
a
TJ =
-
*'P
(-
2483 (TJ
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
8.1
7.5
8.8
93
10
I
JunctionTemperature
1 .o
JAN
2.4
Lower
5.5
Plastic
8.0
EnvironmentFactor - xE
Environment
"
"E
I.o
"I
6.0.
11
9.0
12
13
13
14
15
16
"
9..o
19
"
13
.
Zä))
1
273
.70
JANTX
.
I
,
AIF
29
AUC
20
AUF
43
ARW
("C)
24
"
.50
SF
I
l
14
MF
ML
CL
32
-
320
6-9
Document provided by IHS.
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004
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MIL-HDBK-217F
TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
6.6
DESCRIPTION
Bipolar, Microwave RF Transistor
(Frequency > 200 MHz, Power 1W)
SPECIFICATION
MIL-S-19500
h, = h b ~ T ~ R ~Failures/l
S ~ Q ~O6EHours
Application Note: The model appliesto a single die (for multiple die use the hybrid model). The model does
..
apply to ganged transistors on a single die.
Power Rating Factor ICR
..
Base Failure Rate A,,
Rated Power (Pr,Watts)
“R
-
-
Temperature Factor
vc)
TJ Fc)
*T
TJ
25
i.o
1.1
1.3
1o5
i10
115
120
125
130
135
140
145
1.50
155
160
165
170
î 75
30
35
1.4
40
45
50
55
60
65
70
75
1.6
1.7
i.9
2.1
2.3
2.5
.2.8
ao
as
3.0
3.3
90
3.6
95
1 O0
3.9
- nT
*T
4.5
4.8
’
5.2
5.6
5.9
.55
.64
.71
.77
.83
.88
7.7
1
a
exp(-2114( T J + 2 7 3 . - E ) )
TJ
3
JunctionTemperature(“C)
r
Voltage
Stress Factor - xS
-
8.1
8.6
9.1
9.7
10
11
.92
.96
.
7.2
T
‘
Applied VCE/Rated VCEO
< v,
.3 < v,
.4 < v,
.5
V,
.6 < V,
I .3
v,
.a c v,
.9 < v,
I .8
o
.
.7 c
1 .4
I .5
.6
S -7
I
.9
I 1.0
IC, =
Document provided by IHS.
.43
6.3
6.8
4.2
1
-
Pr i .I
.I< Pr I .2
.2 < Pr I.3
.3 < Pr S .4
.4 < Pr S -5
.5 < Pr I.6
.6 < Pr I.7
.7 < Pr S .8
.8 < Pr I.9
.O45 exp (3.1
(Vs))
“S
.11
.16
.2 1
.29
.39
.54
.73
1.o
(O
V, 1 1.O)
V,
= AppliedVCE / Rated VCEo
VcE
= Voltage,Collector to Emitter
VcEo
= Voltage,Collector to Emitter,Base
Open
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004
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MIL-HDBK-217F
TRANSISTORS, LOW NOISE, HIGH FREQUENCY, BIPOLAR
6.6
Quality Factor -
Quality
JANTXV
Environment Factor -
“Q
.
Environment
i
“E
1 .o
.50
2.0
JANTX
1.o
5.0
JAN
2.0
4.0
Lower
5.0
11
4.0
NOTE: ‘For these devices, JANTXV quality class
must include IR Scan for die attach and screen for
barrier layer pinholes on gold metallized devices.
5.0
7.0
12
16
.50
.
9.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
24
250
6-1 1
Document provided by IHS.
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MIL-HDBK-217F
6.7
TRANSISTORS,
HIGH POWER, HIGH FREQUENCY, BIPOLAR
DESCRIPTION
Power, Microwave, RF Bipolar Transistors
(Average Power2 1W)
SPECIFICATION
MIL-S-19500
h, = hbzTzAz,,pQzEFailuresA O6 Hours
-
Base Failure Rate A+,-
t
Frequency
(GHz)
1.o
5 0.5
,040
.O39 .O38
1
.O47 .O46
2
.O67 .O65
3
.O95 .O93
4
.14 .13
+,
=
10 300 50200
,050
.42
,048
.O69
.O98
,14
.17
5.0
,060
,086
.12
-
+ .00558(P))
‘F
.O32
exp(.354(F)
=
100
.O67
,080
.24
.35
.ll
-16
.23
.12 1.1
.14
a20
.28
400
.36
.20
.62
500
600
.74
1.3
o
Frequency (GHz)
P
=
(W)
Output
Power
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
NOTE: Output power refersto the power level for the overall packaged device andtonot
individual transistors within
the package (if more than one transistor
is ganged together). The output power represents the power output from the
cycle in pulsed applications. Duty cycle is accounted for when
active device and should not account for any duty
determining zk
TJ (“c)
Temperature Factor
- .
-
leT
..
5.40
a l O0
.io
110
120
130
140
150
160
170
180
190
.12
.15
.18
.21
.25
.29
.34
.45
.
.20
25
.30
.36
.43 6.8
.50
AO
-
.45
.59
.68 18
.79
i91
.55
.50
.30
-37
.45
.54
.645.1
’ .75
7.1
-88
1,O13 .
1.2
1.4
200
-
Temperature Fadtor ICT
(Aluminum Metallization)
V, (VCEIBVCES)
TJ (“C)
5.40
. -45
.50
s11.1
O0 -.75 .38
110
5 7 1.7 .1.1
2.3
,84
1.7
2.5
1
130
1.2
2.4
3.6
140
150
160
6.5
3.3
1
23
180
18
12
190
31
23
7.8
15
200
30
.
(Gold Metállization)
V, ( V C E ~ ~ C E S )
.40
.49
.59
.71
.85
3.4
1.04.7
1.2
8.8
1.4 4.4
1.6
1.8
20
20
1.7
2.4
9.7
70
5.9
10
1
ILT= .38exp( 5794 (TJ
+
*
.55
1.5
3.3
4.8
9.5
13
40
&))I
273
(Vs 5 .M)
I
1
(-
-
XT
2 (VS -35)exp 2903
(.4 c v, 5.55)
I
i
VS
= BVCES
VCE;
VCE
BVCES
=
TJ
I
=
1
+
273
- K))s
RT 7.55 (vs
1
-
(.4 < v,
(-
exp
1
+
273
- E))
I
s 55)
VS
=
VCE~BVCES
Operating
Voltage
(Volts)
Collector-Emitter
Breakdown
Voltage with Base Shorted to
Emitter (Volts)
VCE
=
Operating
Voltage
(Volts)
BVCES
=
Collector-Emitter Breakdown
Voltage with Base Shorted to
Emitter (Volts)
Peak
Junction
Temperature
TJ
=
Peak
Junction
Temperature
(OC)
(“C)
6-12
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4
MIL-HDBK-217F
RE
7 9 9 9 7 7 0 0070750
L
.
MIL-HDBK-217F
6.7
TRANSISTORS, HIGH POWER, HIGH FREQUENCY, BIPOLAR
Quality Factor - XQ
-
Application Factor ‘CA
Duty Factor
Application
NIA
cw
I 1%
Pulsed
.46
.70
5%
10%
15%
20%
25%
2 30%
1.o
1.3
1.6
1.9
2.2
1
XA
.=
ICA =
7.6,CW
I
“Q
Quality
XA
7.6
-
.so
JANTXV
JANTX
1 .o
JAN
2.0
Lower
5.0
NOTE: For these devices, JANTXV quality class
must include IR Scan for die attach and screenfor
barrier layer pinholes on gold metallized devices.
.O6 (Duty Factor YO)+ .40 , Pulsed
Environment Factor - 7cc
Matching Network Factor
- “M
Matching
“M
Input and Output
1.o
Input
2.0
None
4.0
Environment
GM
5.0
t
6-13
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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TRANSISTORS, HIGH FREQUENCY, GaAs
FET
6.8
DESCRIPTION
SPECIFICATION
MIL-S-19500
G
a
& Low Noise, Driver and PowerFETs (r 1GHz)
h, = hbnTnAnMnQnE
Failuredl O6 Hours
Base Failure Rate
Average Output Power(Watts)
.
1
e .1
1
4
.O52
.O52
.O52
,052
.O52
,052
.O52
,052
5
6
7
'8
9
10
"
"
.O54
,084
,083
.13
.30 .20
.30
.46 ,72
1.1.71
.
At., =
,052
A+,
=
.O093exp(.429(F)
F
P
Frequency (GHz)
"
1
.36
,066
.1o
.I6
.24
.37
.56
.87
2
.14
.21
.32
.13
.20
50
2.0
.47
'
.76
1.2
1.8
'
4
6
"
"
.96
1.5
2.3
,' 3.5
.56
.85
1*3
'
Pe.1
1 $F$lO,
+ .486(P))
4sFs10,
P
I
.1 < P 1 6
AverageOutputPower(Watts)
The average output power represents the power output from the active device and should not account for any duty
cycle in pulsed applications.
Temperature Factor
Tc ("C)
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
1O0
I
,
KT
Tc ("c)
ZT
1.o
1.3
1.6
2.1
2.6
3.2
4.0
4.9
5.9
7.2
8.7
10
12
15
18
21
105
110
115
120 .
125
í30
135
140
145
150
155
160
165
170
175
24
28
33
38
44
50
58
66
75
85
97
110
120
140
150
Channel
Tc Temperature
Document provided by IHS.
- z-
Application Factor - ITA
..
Application (P I 6W)
I
All LowPowerandPulsed
I
cw
I
1
ZA
I '
I
'
4
~~~~~
P = Average Output Power (Watts)
-
("C)
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- ..
~
~
1
I
I
1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Operating
Frequency.1(GHz)
5
-L
~
IIL-HDBK-217F
NOTICE 3 RE
9999970 0076303
~~
9
MIL-HDBK-217F
NOTICE 1
6.8
Matching Network FactorMatching
I
"M
1 .o
Input and Output
Input Only
2.0
None
4.0
TRANSISTORS, HIGH FREQUENCY, GaAs FET
Environment Factor
Environment
GB
1 .o
GF
2.0
GM
5,O
NS
4.0
NU
- na
Quality Factor
Quality
JANTXV
JANTX
JAN
T
.50
1 .o
2.0
5.0
11
AIC
4.0
AIF
5.0
AUC
7.0
*UF
12
ARW
16
.50
SF
MF
9.0
ML
24
CL
250
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Lower
"Q
-
page
Supersedes
Document provided by IHS.
6-15 of Revision F
6-15
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MIL-HDBK-217F
6.9
SI
TRANSISTORS,
HIGH
FREQUENCY,
SPECIFICATION
MIL-S-19500
FET
DESCRIPTION
Si FETs (Avg. Power c 300 mW, Freq. > 400 MHz)
h, = hb7CTXQ7CE Failures/l O6 Hours
Base Failure Rate
-
+-,
Quality Factor- XQ
I
MOSFET
I
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Transistor Type
JFET
.O23
Temperature Factor
TJ
vc)
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
1O0
“T
1.o
1.1
1.2
1.4
1.5
1.6
1.8
2.0
2.1
2.3
2.5
2.7
3.0
3.2
3.4
3.7
-
TJ (“c)
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
IZT
Quality
1
i
.50
JANTXV
JANTX
1.o
JAN
2.0
Lower
5.0
XT
3.9
4.2
4.5
4.8
5.1
5.4
5.7
6.0
6.4
6.7
7.1
7.5
7.9
-8.3
-
Environment Factor
Environment
“E
GB
1.o
GF
2.0
GM
5.0
NS
4.0
NU
11
4.0
AIF
5.0
%C
7.0
8.7
AUF
12
AFIW
16
SF
MF
9.0
ML
24
CL
250
6-1 6
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.50
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Y
NIL-HDBK-217F
RE W 9997770 0070754 9
MIL-HDBK-217F
6.1 O THYRISTORS AND SCRS
DESCRIPTION
Thyristors
SCRs, T r i m
SPECIFICATION
MIL-S-19500
h, = h b ~ T ~ R n SFailures/l
~ Q ~ EO6 Hours
-
Base Failure Rate -
I
I
Type Device
1
I
All Types
I
.o022
TJ (“c)
25
30
. 35
40
45‘
50
55
60
65
70
75
80
85
90
95
1O0
TJ =
TJ (“c)
1.o
1.i
1.41.6
1.9
2.2
2.6
3.0
3.4
3.9
4.4
5.0
5.7
6.4
7.2
8.0
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
-
.O5
.1o
.50
.
1.0
5.0
10
20
30
40
50
60
70
80
90 .
1O0
110
120
130
140
150
160
170
175
-:
%T
’
’frms
JunctionTemperature(“C)
- ZR. .
(
I
I
Temperature Factor
I
Current Rating Factor
Rated Forward Current
Ifrms (Amps))
=
“R.
.
,30
. .40
L
,76
1.o
1.9
2.5
3.3
3.9
4.4
4.8
5.1
5.5
5.8
6.0
6.3
6.6
6.8
7.0
7.2
7.4
7.6
7.8
7.9
RMS RatedForwardCurrent(Amps)
6-1 7
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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. -
..
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' MIL-HDBK-217F
RE
m
7 7 9 7 7 7 00 0 7 0 7 5 5
O
m
MIL-HDBK-217F
6.1 O THYRISTORS AND SCRS
Voltage Stress Factor- ns
Environment
V, (Blocking Voltage Applied/
Blodcing Voltage Rated)
V, I; .30
.3 <
1 .4 .
.4 < Vs I; .5
.5 Vs S .6
.6 Vs I; .7
.7 vS I.a
.a e vS s .9
,9 e Vs i 1.0 -
Environment
-
us
.
nS
GB
1 .o
.io
.la
GF
6.0
GM
9.0
.27
.3a
NS
9.0
.51
.65
.a2
1 .o
'
-IrS'.10
(Vs < 0.3)
.
XE
'
NU
19
AIC
13
AIF
29
%C
AUF
20
43
ARW
24
.50
SF
(V,
"s
0.3)
- XQ
MF
14
ML
32
CL
320
Quality Factor
Quality
"Cl
JANTXV
0.7
JANVX
1 .o
JAN
2.4
bower
5.5
Plastic
8.0
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MIL-HDBK-217F
RE W 9 9 9 9 7 7 0 O070756 2
MIL-HDBK-217F
OPTOELECTRONICS, DETECTORS,
ISOLATORS,
6.1 1
SPECIFICATION
pto-isolators,
Photodetectors,
MIL-S-19500
EMITTERS
DESCRIPTION
h, = lLbzTxQxE Failures/l O6 Hours
-
-
Base Failure Rate
Optoelectronic Type
Photodetectors
Photo-Transistor
,0055
Photo-Diode
.o040
Quality Factor- ZQ
I
Quality
1
JANTXV
I
"Q
I
.70
Opto-Isolators
Photodiode
Output,
Single
Device
,0025
'
Phototransistor Output, Single Device
Photodarlington Output, Single Device
.O13
Light Sensitive Resistor, Single Device
.O064
Photodiode Output, Dual Device
Phototransistor Output, Dual Device
.O033
.O17
Photodarlington Output, Dual Device
.dl 7
Light Sensitive Resistor, Dual Device
.o086
,013
Environment Factor- xE
Environment
GB
1;o
.O013
GF
2.0
-
GM
8.0
NS
5.0
Emitters
Infrared Light Emitting Diode (IRLD)
Light Emitting Diode (LED)
I
00023
Temperature Factor
TJ ?c)
25
30
35
40
45
50
55
60
65
70
nT
TJ =
zT
1.o
1.2
1.4
1.6
1.8
2.1
2.4
2.7
3.0
3.4
(
- nT
NU
35
80
85
90
95
1O0
105
110
115
1
TJ
.
.
"E.
3.8
4.3
4.8
5.3
5.9
6.6
7.3
8.0
8.8
1
+ 273 - E))
.
12
4.0
AIC
AIF
'6.0
AUC
6.0
AUF
8.0
ARW
,
17
SF
.50
MF
9.0
ML
24
CL
450
.
2790
JunctionTemperature ("C)
6-1 9
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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-
MIL-HDBK-2L7F RE
.
9999970 0070757 I.I
!
MIL-HDBK-217F
6.12
OPTOELECTRONICS,
ALPHANUMERIC
DISPLAYS
DESCRIPTION
Alphanumeric Display
SPECIFICATION
MIL-S-19500
h, = hbnTnQnEFailures/l O6 Hours
-
Base Failure Rate X,,
Number
Ib
Segment
Display
,00043
of
Characters
1
1 wRogicChip
.O0047
2
2 wLÖ& Chip
3
3 w/LÖgic Chip
.O0086
4
4 wkogic Chip
5
6
7
8
9
,00090
*
,0013
.O013
I
1
Ib
Diode Array
Display
.O0026
.O0030
.o0043
,00047
.O0060
.
.o0077
.o022
,0026
.O030
,0034
.O039
,00094
.o01 1
.o043
.O047
10
11
12
13
14
15
.O052
,0056
.O060
TJ
25
30
35
40
45
50
1.o
1.2
1.4
1.6
1.8
2.1
2.4
2.7
3.0
3.4
75
80
85
90
95
1O0
105
110
115
-
6.6
8.0
8.8
‘
1
*T
,’ (P
I
.
-:
2790 (TJ
+ 273
298
1
TJ = .Junction Temperature(“C)
,0025
.O065
.O026
A+, =.00043(C) + +, for Segment Displays
A+, = .O0009 + .00017(C) + Ao
, DMe Array Displays
-
Environment Factor “E
Environment
“E
GB
1 .o
Number of Characters
=F
2.0
P
,000043 for Displays with a
Logic Chip
GM
8.0
=
0.0 for Displays without Logic Chip
NS
5.0
C
a
Ac,.
NOTE: The number of characters in a display is the
in a && sealed
number of characters contained
padtage. For example, a 4 character display
comprising 4 separately packaged single characters
6.0 character displays,
mounted together wouldbe 4-0119
not 1-four character display.
Quality
JANTXV
JANTX
JAN
Lower
Plastic
NU
I
“A
0.7
1.o
2.4
5.5
12
AIC
4.0
AIF
AUC
AUF
-
Quality Factor ’FQ
I
%T
65
70
.O0081
.Oß13
,0015
.O016
.OP1 8
,0020
,0021
.O023
TJ (“c)
55
60
.O0064
.O017
.o018
Temperature Factor
ARW
.
6.0
8.0
17
SF
MF
.
50
9.0
ML
24
CL
450
8.0
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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.'
MIL-HDBK-217F
RE
= 9999978 8[378758 b
MIL-HDBK-217F
OPTOELECTRONICS, LASER DIODE
6.13
í
DESCRIPTION
Laser Diodes with Optical Flux Densities
3 MW/cm2 and Forward Current< 25 amps
SPECIFICATION
MIL-S-19500
L, = hbRTAQnlXARp7cE Failuredl O6 Hours
Forward Current Factor,1
Forward Peak Current (Amps)
.O50
.O75
.1
.5
.
1.0
2.0
GaAdAI GaAs
In GaAYlnGaAsP
Temperature Factor
1.o
1.3
1.7
2.1
2.7
-
4.1
5.1
6.3
7.7
9.3
60
65
70
75
Tc1 =
(ï)a68
I
Forward Peak Current(Amps), I I 2 5
=
Application Factor X .A.
Application
Duty Cycle
TJ =
JunctionTemperature("C)
*A
"""""-
+!273 - g ))
exp(- 4635 (TJ
Pulsed
.
.
4.4
.I
.2
.3
.32
.45
.55
.4
.6
.7
Quality Factor- XQ
Document provided by IHS.
Quality
.8
I
nn
.9
1.o
I
-
J
.a4
.89
,95
1.00
cw
Hermetic Package
1.o
XA
Nonherrnetic with Facet Coating
1.o
"A = Duty Cycle
Nonhermetic without Facet Coating
3.3
= 4.4,
-
.63.
.71
.77
.5
I
.
NOTE: For Variable Current Sources, use the Initial
Current Value.
1
T
'
1.o
1.6
2.1
2.6
3.0
4.8
6.3
7.7
8.9
4.0
5.0
10
15
20
25
%T
3.3
0.62
3.0
- nT
25
30
35
40
45
50
55
"I
0.13
0.1 7
0.21
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
- +,
Base Failure Rate
Laser Diode Type
Pulsed
NOTE: A duty cycleof one in pulsed application
represents the maximum amountit can be driven in
a pulsed mode. This is different from continuous
wave application whichwill not withstand pulsed
operating levelson a cöntinuous basis.
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~.
MIL-HDBK-ZE7F R E
9999970 0670759 B W
MIL-HDBK-217F
OPTOELECTRONICS, LASER DIODE
Power Degradation
Factor
-
- ICE,
Ratio P P s
Environment
nP
0.00
.O5
.so
GB
.53
6,
2.0
.15
.20
.25
.30
.35
,549
GM
8.0
NS
5,O
.I o
.56
.63
.67
.71
.77
.83
AO
.91
1.o
1.1
1.3
1.4
1.7
2.0
2.5
.4S
o
Environment
.50
.55
.60.
.65
.,
.70
.75
.ao
.85
.90
.95
3.3
5.0
10
NU
12
AIC
4.0
AIF
6.0
AUC
6.0
AUF
8.0
ARW
SF
MF.
ML
CL
17
'
.50
9.0
24
450
(mw)
PS
Rated
Optical
Power
Output
Pr =
RequiredOpticalPowerOutput
(mw)
NOTE: Each laser diode must be replaced when
power outputfalls to Pr for failure rate prediction to
be valid.
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6.13
-
RE
MIL-HDBK-217F
m
9 9 9 9 9 7 6 0870760 4
~
m
MIL-HDBK-217F
6.1 4
-
DISCRETESEMICONDUCTORS,TJDETERMINATION
Ideally, device case temperatures should be determined from a detailed thermal analysis of the
equipment. Device junction temperatureis then calculated with the following relationship:
TJ = T c + OXP
where:
=
Junction
Temperature
(“C)
TC- =
Case Temperature (“C). If no thermal analysis exists, the default case
temperatures shownin Table 6-1 should be assumed.
eJC =
Junction-to-Case Thermal Resistance (“Cm. Thisparametershouldbe
6-2, whichever is
determined from vendor, military specification sheets or Table
greater. It may alsobe estimated by taking the reciprocal
of the recommended
derating level. For example, a device derating recommendation of.16 W/”C would
result in a OJC of 6.25 OCM. If eJC cannot be determined assumea eJC value of
70”CM.
. P
=
DeviceWorse Case PowerDissipation (W)
The ‘models are not applicable to devices at overstress conditions. If the calculated junction temperature
is greater than the maximum rated junction temperature on the MIL slash sheets or the vendor’s
specifications, whichever is smaller, then the device is overstressed and these models ARE NOT
APPLICABLE.
Table 6-1:
Default Case Temperat-ures (TC) for All Environments
.
Environment
GB
GF
GM
NS
NU
AIC
AlF
AUC .
AUF
ARW
SF
MF
ML
CL
TC (“c)
35
45
50
45
50
60
60
75
75
60
35
50
60
45
6-23
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TJ
MIL-HDBK-ZL7F
RE
m
9 9 9 9 9 7 00 8 7 8 7 b l
b
m
MIL-HDBK-217F
6.1 4
DISCRETESEMICONDUCTORS,TJDETERMINATION
Table 6-2:
Approximate Junction-to-CaseThermalResistance
Devicesin VariousPackageSizes*
Type
Package
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
TO-1
TO-3
TO-5
TO-8
TO-9
TO-1 2
TO-18
TO-28
TO-33
TO-39
TO-41
TQ-44
TO-46
TO-52
TO-53
TO-57TO-59
TO-60
TO-61
TO-63
TO-66
TO-71
TO-72
TO-83
. TO-89
TO-92
TO-94
TO-99
TO-1 26
TO-127
TO-204
TO-204AA
eJC
eJC
?O
10
70
70
70
70
70
5
70
70
10
70
70
70
5
5
5
5
5
5
10
70
70
5
22
70
5
70
5
5
10
10
'
(eJ c )
for Semiconductor
- 70
70
5
5
5
-. 1o
5
5
10
5
10
10
10
5
70
5
70
70
70
70
70
70
70
70
70
70
70
70
70
70
70
'
'
70
90
'When available, estimates must be based miliary
on
specification sheetor vendor values, whichever8Jc
s higher.
Document provided by IHS.
1
.
Type
Package
TO-205AD
TO-205AF
T01220
DO-4
DO-5
DO-7
DO-8
DO-9
DO-13 .
DO-14
DO-29
DO-35
DO-41
DO-45
DO-204MB
DO-205AB
PA-42A,B
PD-36C
PD-50
PD-77
PD-180
PD-319 .
PD-262
PD-975
PD-280
PD-21 6
PT-2G
PT-GB
.
PH-1 3
PH-1 6
PH-56
PY-58
PY-373
t
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c
.
...
.
MIL-HDBK-217F
RE
m 9979970
00707b2 8
m
MIL-HDBK-217F
6.1 5 DISCRETESEMICONDUCTORS,EXAMPLE
I Example
Silicon dual transistor (complementary), JAN grade, rated for 0.25 W at 25%, one side
only, and 0.35 W at 25"C, both sides, with Tmax = 2OO0C, operating in linear service at
55°C case temperature in a sheltered naval environment. Side one, NPN, operating at
0.1 W and 50 percent of rated voltage and side two, PNP, operating at 0.05 W and 30
MHz.
percent of rated voltage. The device operates at less than 200
Given:
Since the device is a bipolar dual transistor operating at low frequency (c200 MHz), it falls into the
Transistor, Low Frequency, Bipolar Group and the appropriate model is given in Section 6.3. Since the
device is a dual device, it is necessary to compute the failure rateof each side separately andsum them
together. Also, since 0JJc is unknown, eJC = 70°C/W will be assumed.
Based on the given information, the following model factors are determined from the appropriate tables
shown In Section 6.3.
xb 3
"T1 =
"T2 =
"A
=
=
"st =
"s2 =
XR
ZQ
=
"E
=
,00074
2.2
2.1
1.5
.68
.21
.Il
2.4
9
-
Side 1, TJ =TC + 0Jc P = 55 + 70(.1) = 62°C
Side 2, TJ = 55 + 70(.05) = 59°C
Using
equation
shown
with
nR table, P, = .35W
Side 1,50% Voltage
Stress
Side 2,30% Voltage Stress.
hp
=
SIDE 1
SIDE 2% "T1 "A "R "SI ".Q XE -b % "T2 "A ".S2"Q "E
hp
=
(.00074)(2.2)(1.5)(.68)(.21)(2.4)(9+)(.00074)(2.1)(1s)(.68)(.11)(2.4)(9)
=
.O1 1 Failures/lO6 Hours
6-25
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MIL-HDBK-217F
L RE
NOTICE
= 9999970 0076L0.5 2 W
MIL-HDBK-217F
7.1
TUBES, ALL TYPES EXCEPT TWT AND MAGNETRON
DESCRIPTION
All Types Except Traveling Wave Tubes and Magnetrons.
Includes Receivers, CRT, Thyratron, Crossed Field Amplifier,
Pulsed Gridded, Transmitting, Vidicons, Twystron, Pulsed
Klystron, CW Klystron
+,= hbxLzE Failures/106 Hours
-
Type
ectifier
I
Base Failure Rate
(Includes Both Randorn and Wearout Failures)
Tube
I
Tube Type
Klystron, Low Power,
Receiver
5 .O
Tetrode,
Pentode
Triode,
YU
(e.9. Local Oscillator)
Power
10
CRT
9.6
Klystron, Continuous Wave4
3K3000LQ
9.0
Thyratron
50
3K50000LF
54
Crossed Field Amplifier
150
3K21OOOOLQ
QK681
260
3KM300LA
64
SFD261
150
19
3KM3000LA
Pulsed Gridded
110
3KM50000PA
2041
140
120
3KM50000PA1
390
6952
150
3KM50000PA2
7835 140
61
O
4K3CC
Transmitting
4K3SK
29
Triode,
Peak Pwr. I 2 0 0
Ava.
75
4K50000LQ
30
Pwr. 2 2KW, Freq. I 200 MHz
4KM50LB
28
Tetrode & Pentode, Peak Pwr.
1O0
4KM50LC
15
I200 KW, Avg. Powers 2KW,
4KM50SJ
38
Freq. I 200 KW
4KM50SK
37
4KM3000LR
140
Vidicon
4KM50000LQ
79
Antimony Trisulfide(Sb&)
4KM50000LR
57
Photoconductive Material
4KM170000LA
15
Silicon Diode Array Photoconductive
8824
130
Material
I
48
8825
120
Twystron
8826
280
VA 1 44
850
VA800 E
70
450
VA145E
VA853
220
VA145H
490
VA8568
65
VA91 3A
230
VA888E
230
Klystron, Pulsed*
~KMP~OOOOLF
43
Ifthe CW Klystron of interest is not listedabove,
8568
230
L3035
66
use the AlternateCW Klystron ly, Table on the
L3250
69
following page.
L3403
93
SAC42A
1O0
VA842
18
2501OA
150
ZM3038A
190
I
"
KW.
I
I
If the pulsed Klystronof interest is not listedabove,
use the Alternate Pulsed Klystron
hb Table on
the following page.
7- 1
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'
MIL-HDBK-217F
L RE I 9 9 7 9 7 7 0 0 0 7 6 3 0 6 Y
NOTICE
MIL-HDBK-217F
NOTICE 1
7.1
TUBES,
ALL
TYPES
EXCEPT
TWT
AND
MAGNETRON
Altern; :e* Base Failure Rate for Pulsed Klystrons - A
F(GHz)
Po
.2
.4
.6
.8
1.0
.o 1
16
16
16
17
18
19
21
22
16
16
17
17
16
17
17
18
21
25
16
17
18
18
16
16 16 16
17 20 18
18 25 21
19 2822
25
34
31
45
40
63
45
75
90 160
-30
.80
1,o
3.0
5.0
8.0
10
25
31
20
22
25
28
45
23
28
30
34
35
60
75
40
2.0
4.0
6.0
1
T (years)
10
30
34
51
75
110
XL =
=
2.94(F)(P) + 16
F
P
OperatingFrequency in GHz, 0.2 5 F I 6
PeakOutputPowerin MW, .O1 IP s 25 and
P I490 F-2*95
=
I
21
hb =
=
Learning Factor - nL
I
I
T
10(T)-2.1,
1
10,
ITS3
T <1
=
1,T23
=
Number of Years sinceIntroduction
to Field Use
Environment Factor - xE
'See previous page for other Klystron Base Failure
Rates.
Environment
"E
.50
GB
Alternate* Base Failure Rate for CW Klystrons -
o. 1
1.o
3.0
5.0
8.0
10
30
50
+,=
P
F
=
=
GF
F(MHz)
300 500 800 10002000
4000 6000 8000
GM
30
31
32
33
34
35
37
30
35
45
46
NU
55
70
80
80
1O0
+,
31
32
33
34
33
33
34
35
34
34
35
36
30 47
39 48
40 58
49
41 50
57
57
66
66
42
36
30
39
56
71
43
48
58
73
49
59
01
0.5P + .0046F
+ 29
Average Output Power in KW, 0.1 IP 4 100
and P s 8.0(1O)6(F)-1*7
Operating
Frequency
in MHz,
300SF18000
NS
1 .o
14
8 .O
24
AIC
5 .O
AIF
8.0
AUC
6 .O
*UF
12
ARW
40
-20
SF
MF
22
ML
57
CL
1O00
'See previous pagefor other Klystron Base Failure
Rates.
7-2
Supersedes page 7-2 of Revision F
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M I L - H D B K - 2 1 7 FC H GN O T I C E
2
777q770 L711%?044 004
MIL-HDBK-217F
NOTICE 2
7.2
TUBES, TRAVELING WAVE
DESCRIPTION
Traveling Wave Tubes
h, = hbzE Failures/106 Hours
Base Failure Rate
-
Environment Factor- nc
L
Frequency (GHz)
Environment
1410 8 6Power
4 2(W)1 .1
10
1O0
500
1O00
3000
5000
8000
1O000
15000
20000
30000
40000
-
11
11
11
11
11
12
12
12
13
14
15
17
18
12
12
12
12
12
13
13
13
14
15
16
18
13
13
13
13
14
14
14
15
15
16
18
20
16
16
16
16
17
17
17
18
19
20
22
24
19
20
20
20
20
20
21
22
23
24
26
29
24
24
24
24
24
25
26
26
27
29
32
29
29
29
29
29
30
31
32
33
35
39
35 43
42
42
42
42
43
44
45
46
49
51
56
62
.5
GF
1.5
GM
7.0
64
NS
3.0
66
68
71
75
NU
AIC
5.0
83
AIF
7.0
AUC
6.0
9.0
91
ll(l.ooool)p (1.1)F
AUF
P
Rated Power in Watts (Peak, if Pulsed),
.O01 I P I40,OOO
ARW
F
a
Operating Frequencyin GHz, .1 5 F < 18
If the operating frequencyis a band, ortwo different
values, use the geometric mean ofthe end point
frequencies when using table.
10
20
.O5
SF
MF
11
ML
CI
33
Supersedes page 7-3 of Revision F
500
7-3
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61
61
61
62
63
h"
5
I
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MIL-HDBK-217F
TUBES,
MAGNETRON
7.3
DESCRIPTION
Magnetrons, Pulsed and Continuous Wave (CW)
h,
= hbxUxCxEFailures/106 Hours
Base Failure Rate-
r
I
Frequency (GHz)
. 40 .
.50
.1
.5
1 30 5 20 10
P(MW)
7 41 24 .o1
7.6 4.6 1.4
10 6.3 1.9 30028026056
230210
34 180150120 93
.O5
110 64 39 .112 7.2 2.2
130 80 48 .3
15 9.0 2.8
17 10 3.1410 370 330 290 240 200
54150 89
.5
0230170100 621 19 11 3.5
4.4
2458014
680
630
530470410350280
77 210130
3
85
31 230140
4.9 26 16
5
60
70
580
O520460390
I
80
90
100
440
O
480
550
640 760700
I
Pulsed
Magnetrons:
hb =
F
=
CW Magnetrons
(Rated
Power
I~(F)*'~
(P)-2o
Operating Frequency in GHz, .15 F s 100
Utillization Factor- xu
Utilization (Radiate Hours/
Hours)
Filament
I
o .o
RI I
.44
.50
.55
.61
.66
.72
.78
0.1
o .2
0.3
O-4
O .5
0.6
O .7
0.8
.83
.89
.94
o .9
5 KW):
%=I8
1
Environment Factor- nE
Environment
GB
1.o
GF
2.0
GM
4.0
NS
15
NU
47
AIC
10
AIF
16
%C
12
0.44 + 0.56R
AUF
23
R
RadiateHours/FilamentHours
ARW
80
.50
SF
Construction Factor- "C
Construction
CW (Rated Powerc 5 KW)
Coaxial Pulsed
Conventional Pulsed
MF
43
ML
133
CL
2000
a
"C
1.o
1.o
5.4
i
7-4
!
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=
1
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MIL-HDBK-217F RE
9 9 9 9 9 7 0 00707b7 7
-
,
MIL-HDBK-217F
8 .O
LASERS, INTRODUCTION
those items
The models and failure rates presentedin this section apply to Jaserpeculia-, ¡.e.,
wherein the lasing action is generated and controlled.
In addition to laser peculiar items, there are other
assemblies used with lasers that contain electronic parts and mechanical devices (pumps, valves, hoses,
etc.). The failure ratesfor these parts should be determined with the same procedures
as used for other
electronic and mechanical devices
in the equipment or system of which the laser is a part.
The laser failure rate models have been developed at the "functional," rather than "piece part" level
because the available data were not sufficient for "piece part" model development. Nevertheless, the
laser functional models are included in this Handbook in the interest of completeness. These laser
models will be revisedto include piece part models and other laser types when the data become available.
Because each laser familycan be designed using a variety of approaches, the failure rate modelshave
been structuredon three basic laser functions which are common to most laser families,
but may differ in
the hardware implementation
of a givenfunction. These functions are the lasing media, the laser pumping
mechanism (or pump), and the coupling method.
Examples of media-related hardware and reliability influencing factors are the solid state rod, gas, gas
pressure,vacuumintegrity,gasmix,outgassing,andtubediameter.The
electrical discharge,the
flashlamp, and energy level are examples
of pump-related hardware and reliability influencing factors. The
"Q" switch, mirrors, windows, crystals, substrates,
coupling function reliability influencing factors are the
coatings, and levelof dust protection provided,
Some of the laser models require the number
otactive optical surfaces as an input parameter.An active
optical surfaceis one with which the laser energy (or beam) interacts. Internally reflecting surfaces are not
.
cwnted. Figure 8-1 below illustrates examples of active optical surfaces and count.
Flgure 8-1:
Examples of Active OpticalSurfaces
8- 1
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M I L = H D B K = 2 L 7 F RE m 9999970 0070768 9 m
MIL-HDBK-21I F
LASERS, HELIUM AND
ARGON
8.1
DESCRIPTION
‘Helium Neon Lasers
Helium Cadmium Lasers
Argon Lasers
hp = XMEDIA‘CE
-
Lasing Media Failure RateAMEDIA
Type
.
I
AMEDIA
+
~ O U P L I N G ~Failures/l
E
O6
Hours
Environment
Environment
=B
Coupling FailureRate - b u P L I N G
Helium
Argon
I
6
NOTE: The predominant argon laser failure
(as
mechanism is related to the gas media
reflected in AMEDIA; however, when the
“E
.30
=F
1 .o
GM.
4.0
NS
3.0
NU
4.0
AIC
4.0
AIF
6.0
AUC
?,O
AUF
9.0
ARW
5.0
SF
.1 o
MF
3.0
ML
8.0
CL
NIA
tube is refilled periodically (preventive
of
maintenance) the mirrors (as part
~ O U P L I N G )can be expectedto deteriorate
after approximately104 hours of operationif
in contactwith the discharge region.
~ O U ~ L I NisG
negligible for helium lasers.
8-2
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MIL-HDBK-ZL7F
RE
99999700070769
O
II
MIL-HDBK-217F
8.2
LASERS,, CARBON DIOXIDE, SEALED
DESCRIPTION
CO2 Sealed ContinuousWave Lasers
=n;onBhnE +~10 nOsnE
~
~Failures/106
~
~ Hours
~
-
Lasing Media Failure Rateh,,,,,
...
Optical Surface Factor- "0s
Active
Optical
Surfaces
I "OS
.. .
"
I
Tube Current (mA)
10
20
30
40
50
AMEDIA
240
930
1620
2310
3000
6450
0
1 O0
150
. .9900
I = Tube Current (mA), 1O s I 5 150
I
O
*
25
2
2
1
nos
= Number of Active Optical Surfaces
NOTE: Only active optical surfaces are
counted. An active optical surface is one with
which the laser energy or beam interacts.
Internally reflecting surfaces are not counted.
See Figure 8-1 for examples on determining
the
number of optical surfaces.
= 69(l) 4 0
Gas Overfill Factor= "0
CO2 Overfill Percent (%)
I
1.
.
-
AMEDIA
1
"O
1.0
Environment Factor- zC
Environment
.75
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
h
GB
GF
GM
no = 1 - .O1 ("hOverfill)
.
Overfill percentis based onthe percent increase
over the optimumCO2 partial pressure which is
normally in the rangeof 1.5 to 3 Torr (1 Torr = 1
m m Hg Pressure) for most sealedC02 lasers.
NS
NU
AIC
AIF
AUC
- XB
Ballast Factor
Percent of Ballast
Volumetric Increase
.
O
50
1 O0
150
AUF
ARW
"6
1 .o
.58
.33
.19
SF
MF
ML
C,
i
.
NIA
8.0
8-3
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RE
999997[3 0070770 7
MIL-HDBK-217F
LASERS, CARBON DIOXIDE, FLOWING
8.3
:
DESCRIPTION
CO2 Flowing Lasers
hp = ~ C O U P L I N G ~ OII:ES Failures/lO6 Hours
-
Coupling Failure Rate- XWUPLING
Environment Factor xc
GB
L
“E
-30
GF .
1 .o
GM
4.0
NS
3.0
NU
4.0
Beyond the1KW range other glass failure mechanisms
AIC
4.0
begin to predominate and alter the
XCOU~L~NG
values.
CO2 flowing laser optical
It should also be noted that
devices are the primary source of failure occurrence.
A tailored optical cleaning preventive maintenance
program on optic devices greatly extends laser life.
AIF
6.0
AUC
7.0
AUF .
9.0
ARW
5.0
1.o
300
P = Average Power CSutputin M,.O1 S P I l .D
’
SF
-
Optical Surface Factor %OS
Active Optical Surfaces
nos
I
1
1
2
2
.1o
MF
3.0
ML
8.0
CL
NIA
nos = Number of Active Optical Surfaces
NOTE: Only active optical surfaces are counted.
with which the laser
An active optical surface is one
energy or beam interacts. Internally reflecting
surfaces are not counted. See Figure 8-1 for
examples on determining the number of optical
surfaces.
8-4
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UPL LING
Environment
x
~
m
RE
MIL-HDBK-237F
~
9 9 9 9 9 7 00 0 7 0 7 7 3
~~~~~~
9
m
MIL-HDBK-217F
LASERS, SOLID STATE, ND:YAG
AND
8.4
RUBY ROD
DESCRIPTION
Neodymium-Yttrium-Aluminum-Gamet (ND:YAG) Rod Lasers
Ruby Rod Lasers
PUMP ~ E D I A+ 16.3 z
Pump Pulse Failure Rate - h p u ~ p
X,
(
+
~
znE~Failures/l
~ )
O6
Hours
-
Pump Pulse Failure Rate h p " ~ p
(Xenon Flashlamps)
The
empirical
formula
used
to determine
The empirical
formula
used
to
determine
for
Krypton lamp is:
'
(Failures/l06 Hours) for Xenon lamps is:
l c p ~ ~ispthe failure rate contributionof the Xenon
flashlamp or flashtube. The flashlamps
evaluated herein are linear types used for
military solid state laser systems. Typical
default model parameters are given below.
PPS
*
Ej
is therepetitionpulserate in pulsesper
second. Typicalvaluesrangebetween1and
20 pulses per second.
is the flashlamp or flashtubeinputenergyper
pulse, in joules. Its value is determined from
the actual or design Input energy. For values
less than30 joules, use Ej = 30. Default
value: E 40.
u+
~,P
is the failure rate contributionof the krypton
flashlamp or flashtube. The flashlamps
(CW)
evaluted herein are the continuous wave
type and are most widely used for commercial
solid state applications. They are approximately 7mm in diameter and5 to 6 inches long,
P
is theaverageinputpowerinkilowatts.Default
value: P = 4.
L
is the flashlamporflashtubearclengthin
inches. Default value: L = 2.
zmL
isthecoolingfactordue to variouscooling
media immediately surrounding the flashlamp
or flashtube. z c m ~ = 1 for any air or inert gas
'
. cooling,
i'
t
WOOL
is ttie flashlaniporflashtubearclength
inches. Defautt value: L = 2.
= .1 .for all liquid designs.
Default value: zCmL = .1, liquid cooled.
distheflashlamporflashtubeinsidediameter,
in millimeters. Default value: d = 4.
L
zmt
Media Failure Räte - AMEDIA
in
Laser Type.
is the
truncated
pulse
width
in microseconds.
Use t= 1O0 microseconds for any truncated
pulse width exceeding 100 microseconds. FOI
shorter duration pulses, pulse width
is to be
measured at1O percent of the maximum
current amplitude. Default value: t I 100.
&MEDIA
ND:YAG
O
I
Ruby
1
is the cooling factor due to various cooling
media immediately surrounding the flashlamp
or flashtube. zCwL I1.O for any air or inert
gas cooling. z c m ~ .1 for all liquid cooled
designs. Default value: nCmL = .1 , liquid
cooled.
.
I
PPS
-
F
-
(3600) (PPS) [43.5 F2*52]
isthenumberofpulses
persecond
is the energy
density in Joules
per
cm.2/pulse over the cross-sectionalarea
of the laser beam, whichis nominally
equivalent to the cross-sectional area of
the laser rod, andits value is determined
from the actual design parameter
of the
laser rod utilized.
NOTE: hEDlA is negligible for ND:YAG lasers.
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I
8-5
MIL-HDBK-2L7F
RE E 9 9 9 9 9 7 00 8 7 0 7 7 2
O E
MIL-HDBK-217F
8.4
LASERS, SOLID STATE,
ND:YAG
AND
RUBY
ROD
-
Environment Factor xE
Environment
"E
nc
Rigorous cleanliness procedures
and trained maintenance
personnel. Belbws providedovw
optical train,
'GB
1
Minimal procau&r duhg oponing,
maintenaco, r o p a u . urd tosting.
Bdbm pt0vid.d ovor opticaltnin.
30
Minimalpr.cuttionr during op.ning,
maintenance, ropair, md tuting. No
belbm providd v o r opticrl tmin.
80
.30
GF
1 .o
.%A
4.0
NS
3.0
NU
4.0
+F
4.0
. 6.0
*IC
AUC
7.0
9.0
ARW
SF
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1
2
2
5.0
.1o
MF
3.0
ML
8.0
CL
NIA
I
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MIL-HDBK-217F
9999770 0397046 987
CHG NOTICE 2
MIL-HDBK-217F
NOTICE 2
RESISTORS
9.1
'P = 'bzTRP
S QR E Failures/106 Hours
X X:
RC
11
Resistor, Fixed, Composition (Insulated)
.o017
XT Table
Use
Column:
1
RCR
39008
Resistor, Fixed, Composition (Insulated) Est. Rel.
.o017
1
2
RL
22684
Resistor, Fixed, Film, Insulated
.O037
2
1
RLR
39017
Resistor, Fixed, Film (Insulated), Est. Rel.
.O037
2
1
RN (R, C or N)
551 82
Resistor, Fixed, Film, Established Reliability
.O037
2
1
RM
55342
Resistor, Fixed, Film, Chip, Established Reliability
.O037
2
1
RN
10509
Resistor, Fixed Film (High Stability)
.O037
2
1
RD
11804
Resistor, Fixed, Film (Power Type)
.O037
RZ
8340 1
Resistor Networks, Fixed, Film
.o01 9
1
VIA, X s = 1
RB
93
Resistor, Fixed, Wirewound (Accurate)
.O024
2
1
RB R
39005
Resistor, Fixed, Wirewound (Accurate) Est. Rel.
.O024
2
1
RW
26
Resistor, Fixed, Wirewound (Power Type)
.O024
2
2
RWR
39007
Resistor, Fixed, Wirewound (Power Type) Est.Rel.
.O024
2
2
RE
18546
Resistor, Fixed, Wirewound (Power Type, Chassis
Mounted)
.O024
2
2
RE R
39009
Resistor, Fixed, Wirewound (Power Type, Chassis
Mounted) Est. Rel.
.O024
2
2
RTH
23648
Thermistor, (Thermally Sensitive Resistor),
Insulated
.o019
RT
27208
Resistor, Variable, Wirewound (Lead Screw
Activated)
.O024
2
1
RTR
39015
Resistor, Variable, Wirewound (Lead Screw
Activated), Established Reliability
.O024
2
1
RR
1 2934
Resistor, Variable, Wirewound, Precision
,0024
2
1
RA
19
Resistor, Variable, Wirewound (Low Operating
Temperature)
.O024
1
1
RK
39002
Resistor, Variable, Wirewound, Semi-Precision
.O024
1
1
Resistor, Wirewound, Power Type
.O024
2
1
Resistor, Variable, Nonwirewound
.O037
2
1
Resistor Style
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
RP
;pecification
MIL-R-
22
RJ
22097
Description
%
NIA,
=1
ns Table
Use
Column:
2
1
NIA, XT = 1 NIA, XS = 1
RJ R
39035
Resistor, Variable, Nonwirewound Est. Rel.
.O037
2
1
RV
94
Resistor, Variable, Composition
.O037
2
1
RQ
39023
Resistor, Variable, Nonwirewound, Precision
.O037
1
1
RV C
23285
Resistor, Variable, Nonwirewound
.O037
1
1
Supersedes Section 9.0 - 9.17 of Revision F
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9-1
CHG N O T I C E 2
flIL-HDBK-ZL7F
9 9 9 9 9 7 0 0197047 813
MIL-HDBK-217F
NOTICE 2
RESISTORS
9.1
- XT
Power Factor- XP
Temperature Factor
-
TW)
Column 1
Column 2
20
.88
.95
nT
"P
.o01
.o68
30
1.1
1.1
.o1
.i7
40
1.5
1.2
.13
.44
50
1.8
1.3
.25
.5a
60
2.3
1.4
.50
.76
70
2.8
1.5
.75
.89
ao
3.4
1.6
1.o
1.o
90
4.O
1.7
2.0
1.3
1 O0
4.8
1.9
3.0
1.5
110
5.6
2.0
4.0
1.7
120
6.6
2.1
5.0
1.9
130
7.6
2.3
10
2.5
140
8.7
2.4
25
3.5
2.5
50
4.6
1O0
6.0
150
7.1
10
150
I
Power Dissipation (Watts)
exP
-Ea
1
8.617 x 10-
Column 1: Ea = .2
np = (Power D i s ~ i p a t i o n ) . ~ ~
Column 2: Ea = .O8
T
Resistor Case Temperature. Can be.approximated
as ambient component temperature for low
power dissipation non-powertype resistors.
P
NOTE: 'CTvalues shown should only be used up to
the temperature ratingof the device. For
devices with ratings higher than 150°C, use
the equation to determinex,-.
Supersedes page Section 9.0 - 9.17 of Revision F
9-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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MIL-HDBK-217F
9999970 0397048 7 5 T
CHG N O T I C E 2
MIL-HDBK-217F
NOTICE 2
-
Power Stress FactorI
Environment Factor- IC€
Environment
C ~
Column 1
Column 2
.1
.79
‘66
GB
ICE
1 .o
.2
.88
.81
GF
4.0
.3
.99
Power Stress
.4
1.1
1.5
.5
1.2
1.8
.6
1.4
.7
1.5
2.8 .8
1.7
I
.. c- l
1.9
1.o
GM
16
1.2
NS
12
NU
42
18
2.3
I
3.4
Column 1 : zs = .71e1.1( S )
S =
AIF
23
AUC
31
AUF
43
ARW
63
.50
SF
Actual Power Dissipation
Rated Power
Quality Factor- I
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
RESISTORS
9.1
C
MF
37
ML
87
CL
1728
~
Quality
Established Reliability Styles
S
I
I
ICQ
.O3
R
0.1
P
0.3
M
1.o
Non-Established Reliability
Resistors (Most Two-Letter Styles)
Commercial or Unknown Screening
Level
3.0
10
NOTE: Established reliability styles are failure
rate graded(S, R, P, M) based on life testing
defined in the applicable military device
specification. This category usually applies only
to three-letter styles with an “R”Suff ¡x.
Supersedes Section 9.0 - 9.17 of Revision F
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9-3
MIL-HDBK-ZL7F CHG N O T I C E 2
9 9 9 9 9 7 0 0397049 b7b
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
'P=%
Capacitor
Style
I
cz, cm
CQ,
CQR
ai
CHR
m
Spec.
MIL-C-
I
Supersedes Section 10.1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Document provided by IHS.
'ETTable Use
zc Table Use
Column:
Column:
1
1
1
.O0037
1
1
.O0037
1
1
1
1
.O0051
1
1
1
1
.O0037
1
1
1
1
.O0051
1
1
1
1
.O0051
I
1
1
l
1
1
1
Description
Column:
Capacitor, Fixed, PaperDielectric, Direct Current
(Hermetically Sealed in Metal
Cases)
Capacitor, By-pass, Radio Interference Reduction, Paper
Dielectric, AC and DC
(Hermetically sealed in Metallic
Cases)
1 1693 Capacitor, Feed through, Radio
Interference Reduction AC and
DC (Hermetically sealed in metal
cases), Established and
Nonestablished Reliability
19978 Capacitor, Fixed Plastic (or
Paper-Plastic) Dielectric
(Hermetically sealed in metal,
ceramic or glass cases),
Established and Nonestablished
Reliability
18312 Capacitor, Fixed, Metallized
(Paper, Paper Plastic or Plastic
Film) Dielectric, Direct Current
(Hermetically Sealed in Metal
Cases)
39022 Capacitor, Fixed, Metallized
Paper, Paper-Plastic Film or
Plastic Film Dielectric
555 14 Capacitor, Fixed, Plastic (or
Metallized Plastic) Dielectric,
Direct Current in Non-Metal Case:
Capacitor, Fixed Supermetallized
Plastic Film Dielectric (DC, AC or
DC and AC) Hermetically Sealed
in Metal Cases, Established
Reliability
Capacitors, Fixed, Mica Dielectric
39001 Capacitor, Fixed, Mica Dielectric,
Established Reliability
10950 Capacitor, Fixed, Mica Dielectric,
Button Style
11272 Capacitor, Fixed, Glass Dielectric
Capacitor, Fixed, Glass
23269 Dielectric, Established Reliability
T
CY
T C V SR 'TCQ7cE Failures/106 Hours
X 'TC 7~ 'TC
.O0037
E
',,
Table -
U se
%R
1
~
.O0051
1
1
.O0076
.O0076
2
2
1
2
2
.O0076
2
1
2
1
.O0076
.O0076
2
2
1
2
1
I
2
1
- 10.20 of Revision F
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1
10-1
MIL-HDBK-217F C H G N O T I C E 2
9999570 0397050 308 D
MIL-HDBK-217F
NOTICE 2
10.1
CAPACITORS
I
I
Description
CK
1 1O1 5
CKR
C C , CCR
4
20
Capacitor, Fixed, Ceramic
Dielectric (General Purpose)
Capacitor, Fixed, Ceramic 3901
Dielectric (General Purpose),
Established Reliability
.o0099
Capacitor, Fixed, Ceramic
Dielectric (Temperature
Compensating), Established and
Nonestablished Reliabilihr
.o0099
Capacitor, Chip, Muttiple Layer,
Fixed, Ceramic Dielectric,
Established Reliability
.o020
CSR
39003
capacitor, Fixed, Electrolytic
(Solid Electrolyte), Tantalum,
Established Reliability
.O0040
CWR
55365
Capacitor, Fixed, Electrolytic
(Tantalum), Chip, Established
Reliability
.O0005
CL
3965
Capacitor, Fixed, Electrolytic
(Nonsolid Electrolyte), Tantalum
,00040
CLR
39006
Capacitor, Fixed, Electrolytic
(Nonsolid Electrolyte), Tantalum,
Established Reliability
.O0040
CRL
83500
Capacitor, Fixed, Electrolytic
(Nonsolid Electrolyte), Tantalum
Ca?hode
.O0040
Capacitor, Fixed, Electrolytic
(Aluminum Oxide), Established
Reliability and Nonestablished
Reliability
.o0012
CE
Capacitor, Fixed Electrolytic (DC,
Aluminum, Dry Electrolyte,
Polarized)
62.o0012
cv
81
Capacitor, Variable, Ceramic
Dielectric (Trimmer)
.O079
PC
14409
Capacitor, Variable (Piston Type,
Tubular Trimmer)
.O060
Capacitor,
(Trimmer)
(TT
CG
10-2
83
Variable,
Air
Dielectric.O000072
92
Capacitor, Fixed or Variable, 231 .O060
Vacuum Dielectric
Supersedes
Section
10.1 - 10.20 of Revision F
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MIL-HDBK-217F
CHG
9999770 0377053 244 D
NOTICE 2
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
Temperature Factor
nT
-
-
Capacitance Factor TC
XT
T(%)
Column 1
Column 2
20
.91
.79
.r
Capacitance,
C(cLF)
Column 1
-
Column 2
.000001
.29
.04
30
1.1
1.3
.o0001
.35
.07
40
1.3
1.9
.o001
.44
.12
50
1.6
2.9
.o01
.54
.20
60
1.8
4.2
.o1
.66
.35
70
2.2
6.0
.O5
.76
.50
80
2.5
8.4
.1
.81
.5 9
90
2.8
11
.5
.94
.85
1O0
3.2
15
1
1 .o
1 .o
110
3.7
21
3
1.1
1.3
120
4.1
27
8
1.2
1.6
130
4.6
35
18
1.3
1.9
140
5.1
44
40
1.4
2.3
150
5.6
56
200
1.6
3.4
1O00
1.9
4.9
3000
2.1
6.3
1O000
2.3
8.3
= exp
(
1
T + 273298
Column 1: Ea = .15
30000
2.5
11
Column 2: Ea = .35
60000
2.7
13
T = Capacitor Ambient Temperature
120000
NOTE: 1. zT values shown should only be use
up to the temperature fatingof the
device.
2.9
A
15
7tc = c .o9
Column 2: TC = c.23
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2. For devices with ratings higher than
150°C, use the equation to determin
~ C(for
T applications above 15OOC).
Column 1:
s
Supersedes Section 10.1 - 10.20 of Revision F
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10-3
MIL-HDBK-217F
CHG N O T I C E 2
9 9 9 9 907109 7 0 5 2
180
MIL-HDBK-217F
NOTICE 2
10.1
CAPACITORS
-
Voltage Stress Factor xv
Column 1
Column 2
Column 3
Column 4
Column 5
0.1
1 .o
1 .o
1 .o
1 .o
1 .O
0.2
1 .o
1 .o
1 .o
1 .o
1.1
0.3
1 .O
1 .o
1 .1
1 .O
1.2
O .4
1 .1
1 .O
1.3
1 .O
1.5
0.5
1.4
1.2
1.6
1 .O
2.0
0.6
2.0
2.0
2.0
2.0
2.7
0.7
3.2
5.7
2.6
0.8
5.2
19
0.9
8.6
59
Voltage Stress
Column 1:
'zv = (
Column 2:
nv = ($)'O
column 3:
'zv =
3 5
+
3.7
15
130
3.4
5.1
4.4
990
6.8
5.6
5900
9.0
1
+1
(2>"+ 1
S =
Operating Vpltage
Rated Voltage
Note: Operating voltage is the sum
of applied DC voltage and peakAC voltage.
Series Resistance Factor
(Tantalum CSR Style Capacitors Only)
- xSR
Circuit Resistance, CR (ohms/volt)
L
-
>0.8
.66
>0.6 to 0.8
1 .O
>0.4 to 0.6
1.3
>0.2 to 0.4
2.0
>0.1 to 0.2
2.7
o to 0.1
CR =
10-4
Document provided by IHS.
-
3.3
Eff. Res. Between Cap. and Pwr. Supply
Voltage Applied to Capacitor
Supersedes Section 10.1 - 10.20 of Revision F
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flIL-HDBK-217F
CHG NOTICE 2
9 9 9 7 9 7 0 0 3 9 7 0 5 3 0x7
a
MIL-HDBK-217F
NOTICE 2
CAPACITORS
10.1
-
Environment Factor X-
~~~
Non-Established Reliability
Capacitors (Most Two-Letter Styles)
Commercial or Unknown Screening
Level
3.0
1o.
NOTE: Established reliability styles are failure
rate graded (D, C, S, etc.) basedon life testing
defined in theapplicable military device
specification. This category usually applies only
to three-letter styleswith an "R" Suff¡x.
Supersedes Section 10.1 - 10.20 of Revision F
10-5
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VIL-HDBK-217F
CHG NOTICE 2
H 9997970 0397054
T53
MIL-HDBK-217F
NOTICE 2
10.2
CAPACITORS,
EXAMPLE
Example
Given:
A 400 VDC ratedcapacitortypeCQ09AlKE153K3isbeingusedinafixedground
environment, 50°C component ambient temperature, and200 VDC applied with50 Vrms @
60 Hz. The capacitoris being procured in full accordance with the applicable specification.
The letters "CQ"in the type designation indicate that the specification
is MIL-C-19978 and thatit is a NonEstablished Reliability quality level. The "E" in the designation correspondsto a 400 volt DC rating. The
"153" in the designation expresses the capacitance in picofarads. The first two digits are significant and
the third is the number of zeros to follow. Therefore, this capacitor has a capacitance of 15,000
picofarads. (NOTE: Pico = 1O-1 2, p = 1O-6)
Based on the given information the following model factors are determined from the tables shown in
Section 10.1.
hb
=
.O0051
XT
=
1.6
xc
=
.69
Use Table Equation (Note 15,000pF = .O15 pF)
2.9
+ fi (AC Volts Applied)
S = DC Volts Applied
DC Rated Voltage
xv
S =
nSR
10-6
Document provided by IHS.
200 + fi (50) =
40 O
1
XQ
=
3.0
XE
=
10
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Supersedes Section 10.1
- 10.20of Revision F
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flIL-HDBK-237F
9999970 0397055
99T
CHG N O T I C E 2
MIL-HDBK-217F
NOTICE 2
11.1
DESCRIPTION
STY LE
Power
Pulse
High
Audio,
Power
and
TF
TP
Low Power Pulse
Intermediate Frequency (IF), RF and Discriminator
-
Base Failure Rate 3.0
Transformer
hb (F/1O6 hrs.)
Flyback (< 20 Volts)
.O054
Audio (15 -20K HZ)
.O1 4
Low Power Pulse
(Peak Pwr.< 300W,
Avg.
Pwr.
5W)
.o22
High Power, High
Power Pulse (Peak
Power 2 300W, Avg.
Pwr. 2 5W)
,049
RF (10K - 10M HZ)
.13
Temperature Factor- nT
20
30
40
50
60
70
80
90
1O0
110
120
130
140
150
160
170
180
190
XT
.93
1.1
1.2
1.4
1.6
1.8
1.9
2.2
2.4
2.6
2.8
3.1
3.3
3.5
3.8
4.1
4.3
!
- xn
Quality Factor
MIL-SPEC
Lower
- x,
Environment Factor
1
Environment
1
GB
XE
1.o
GF
6.0
GM
NS
NU
5.0
16
6.0
AIF
8.0
AUC
7.0
AUF
9.0
ARW
SF
24
.50
MF
13
ML
34
CL
61 O
4.6
11.3. This prediction model assumes that the
for
insulation rated temperature is not exceeded
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1
12
AIC
THS = Hot Spot Temperature(“C),
See Section
Document provided by IHS.
1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
SPECIFICATION
MIL-T-27
MIL-T-21038
MIL-T-55631
INDUCTIVE DEVICES,
TRANSFORMERS
flIL-HDBK-217F
C H G NOTICE 2
m
9 9 9 9 9 7 0 0197056 826
m
MIL-HDBK-217F
NOTICE 2
11.1
INDUCTIVE
DEVICES,
TRANSFORMERS
Transformer
Characteristic
Determination
Note
MIL-T-27
Example
Designation
TF
I
MIL-T-27
G4
i
i
Grade
O¡
576
I
Insulation
Family
Case
Class
Symbol
Family Type Codes Are:
O1 through 09,
Power Transformer and Filter:
37 through 41
Audio Transformer: 10 through 21,
through
50
53
Pulse Transformer: 22 through 36,54
MIL-T-21036
Example
Designation
TP
4
I
I
Grade
MIL-T-21038
Q
I
X1 1OOBCOOl
Insulation
Class
MIL-T-55631. The Transformers are Designated
with the following Types, Grades and Classes.
Type I
Type II
Type 111
Grade 1
-
Grade3 Class O Class A
Class B
Class C Grade2
Intermediate Frequency Transformer
Radio Frequency Transformer
Discriminator Transformer
For Use When immersion and
Moisture Resistance Tests are
Required
For Use When Moisture Resistance
Test is Required
For Use in Sealed Assemblies
85°C Maximum Operating
Temperature
105°C Maximum Operating
Temperature
125% Maximum Operating
Temperature
> 125°C Maximum Operating
Temperature
The class denotesthe maximum operating
temperature (temperature rise plus maximum
ambient temperature).
11-2
Supersedes page 11-2 of Revision F
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MIL-HDBK-217F
CHG N O T I C E 2
9999970 0397057 762
MIL-HDBK-217F
NOTICE 2
INDUCTIVE
DEVICES,
11.2
STYLE
-
RF
Variable,
and Fixed
Variable,
and
Fixed
RF, Chip
Molded, RF, Est. Rel.
-
n: Failures/106 Hours
'P=',
T Q E
Base Failure Rate- &
Quality Factor - XQ
Quality
or Choke
Fixed
Inductor
.O00030
Temperature Factor THs(°C)
20
30
40
50
60
70
80
90
1O0
110
120
130
140
150
160
170
180
190
THs
"T
.93
1.1
1.2
1.4
1.6
1.8
1.9
2.2
2.4
2.6
2.8
3.1
3.3
3.5
1
"Q
S
.03
R
.1o
P
.30
M
1.o
MIL-SPEC
1.o
Lower
3.0
Environment Factor- IC,
1
Environment
1
"E
GB
1 .o
GF
6.0
GM
NS
NI I
12
5.0
16
6.0
AIF
8.0
3.8
AUC
7.0
4.1
4.3
4.6
*UF
9.0
= Hot Spot Temperature ("C),
ARW
24
.50
SF
MF
13
ML
34
CL
61 O
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
SPECIFICATION
DESCRIPTION
MIL-C-15305
M IL-C-83446
MIL-C-39010
COILS
See Section 11.3
Supersedes page 11-3 of Revision F
Document provided by IHS.
11-3
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MIL-HDBK-217F
NOTICE 2
11.3
INDUCTIVE
DEVICES,
DETERMINATION
OF HOT SPOT
TEMPERATURE
Hot Spot temperaturecan be estimated as follows:
THS = TA + 1.1 (AT)
where:
THS =
TA =
AT =
HotSpotTemperature("C)
InductiveDeviceAmbientOperatingTemperature("C)
AverageTemperatureRiseAboveAmbient("C)
AT can either be determined bythe appropriate "Temperature Rise" Test Method paragraph
in thedevice base
specification (e.g., paragraph 4.8.12 for MIL-T-27E),
or byapproximation using one of the procedures
described below. For space environments a dedicated thermal analysis should
be performed.
AT Approximation (Non-space Envir Iments)
Information Known
1.
MIL-C-39010SlashSheetNumber
MIL-C-39010/1C-3C, 5C, 7C, 9A, 10A, 13,14
MIL-C-39010/4C, 6C, 8A, 11, 12
AT Approximation
AT = 15°C
AT = 35°C
2.
Power
Loss
Case Radiating Surface Area
AT = 125 WL/A
3.
Power
Loss
Transformer Weight
AT = 11.5 WL/(Wt.).6766
4.
Input
Power
Transformer Weight
(Assumes 80% Efficiency)
AT = 2.1 Wl/(Wt.). 6766
WL
=
Power Loss (W)
A
=
RadiatingSurfaceArea ofCase (in2).See below forMiL-T-27CaseAreas
Wt.
=
TransformerWeight(Ibs.)
W,
=
Input Power (W)
NOTE: Methods are listedin preferred order(Le., most to least accurate). MIL-C-39010 are microminiature deviceswith surface areas less than1 in2. Equations 2-4 are applicableto devices with
surface areas from 3 in2to 150 in2. Do not includethe mounting surface when determining radiating
surface area.
Case
AF
AG
AH
AJ
EB
EA
FB
FA
MIL-T-27 Case Radiatinc Areas (Excludes Mounting Surface)
Case
Case
Area (in2)
Area (in2)
4
GB
33
7
LA
43
GA
11
HB
MB
42
MA
18
HA
53
NB
21
58
JB
71
NA
23
JA
KB
72
OA
25
KA
31
84
Area (in2)
82 LB
98
98
115
117
139
146
Supersedes pages 11-4 and 11-5 of Revision F
11-4
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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MIL-HDBK-217F
9999970 0397059 5 3 5
CHG N O T I C E 2
m
MIL-HDBK-217F
NOTICE 2
12.1
ROTATING DEVICES, MOTORS
The following failure-rate model applies to motors with power ratings below one horsepower. This model is applicable to
polyphase, capacitor start and run and shaded pole motors. It's application may be extended to other types of fractional
horsepower motors utilizing rolling elementgrease packed bearings. The model is dictated by two failure modes, bearing
failures and winding failures. Application of the
model to D.C. brush motors assumes that brushes are inspected and
replaced and are not a failure mode. Typical applications include fans and blowers as well as various other motor
applications. The model is based on References 4 and 37, which contain a more comprehensive treatment of motor life
, prediction methods. The references should be reviewed when bearing loads exceed 10 percent of rated load, speeds
exceed 24,000rpm or motor loads include motor speed
slip of greater than 25 percent.
[-
1P = AUB
hl
+
]
h2
BC~W x lo6 Failures/106
Bearing & Winding Characteristic Life
TA ?c)
aB (Hr.1
3600
70
13000
39000
78000
80000
55000
35000
7.56+03
O
10
20
30
40
50
60
aB
=
TAaw (HI.)
- a~ and aw
("c)
6.48+06
3.28+06
1.6e+06
8.9e+05
5.08+05
4200
2900
2.98+05
1.8e+05
21
1500
7.0e+04
80
90
1O0
110
120
130
140
Hours
aB (Hr.)
aw
e+05
22000
14000
91O0
61O0
e+04
1.1
O0
I
L
2357
[TA + 273
- 1.831
clw
=
10
aB
=
Weibull
Charact
aw
E
Weibull Characteristic Life for
the Motor Windings
TA
=
Ambient Temperature ("C)
eristic Life forthe Motor Bearing
NOTE: See page 12-3 for method to calculate
aB and a,,,,when temperatureis not constant.
Supersedes page 12-1
12-1
of Revision F
Document provided by IHS.
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W.)
4.6e+04
3.1 e+04
2.1
1.56+04
1.08+04
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
The instantaneous failure rates, or hazard rates, experienced by motors are not constant but increase with time. The
failure rate model in this section is an average failure rate for the motor operating over time period '7". This time period is
either the system design life cycle (LC) or the time period the motor must last between complete refurbishment (or
replacement). The model assumes that motors are replaced upon failure and that an effective constant failure rate is
achieved after a given time due to the fact that the effective "time zero" of replaced motors becomes random after a
significant portion of the population is replaced. The average failure rate, A , can be treated as a constant failure rate and
P
added to other part failure rates from this Handbook.
2
M I L - H D B K - 2 1 7 FC H GN O T I C E
9999970 01'170b0 257
MIL-HDBK-217F
NOTICE 2
ROTATING DEVICES, MOTORS
A and B Determination
Motor TvDe
I
A
I
1
1.1
Electrical (General)
.48
Sensor
I
B
2.4
1.7
Stepper
11
5.4
Example Calculation
A general purpose electrical motor is operating at
50°C in a system witha 10 year design life(87600
hours) expectancy,
aB
=
55000 Hrs.
+ 5 Hrs.
aW =
2.9e
LC
"B
-
87600 Hrs.
55000 Hrs.
LC
-
"
"
"W
hl
=
=
87600 Hrs.
+ 5 Hrs. =
(for
.3
E=
1.6)
.11 - -20
.15
.21 - .30
.23
.31 - .40
.31
.41 - .50
.4 1
.51 - .60
.51
.61 - .70
.6 1
.71 - .80
.68
.81 - .90
.76
1 .o
-Cis the system design life cycle(in hours), or
he motor preventive maintenance interval,if
notors will be periodically replaced or
.efurbished.
Determine hl and
separately
I
lased on the
respective
h2
=
.23
A
=
1.9
B
=
1.1
%=
1.0
[(1.9)(55000)
hp
=
12-2
Document provided by IHS.
h2
.13
I
I
Or
o - .10
z 1.0
2.9e
1.0
1.6
hl
1.9
.29
Servo
h, and
Determination
n
I,-.
and
ratios.
aB
"W
+
(1.1)(2.9e + 5)
10.3 Failures/lO6 Hours
Supersedes page 12-2 of Revision F
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--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
12.1
MIL-HDBK-217F
NOTICE 2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
12.1
ROTATING DEVICES, MOTORS
aCalculation for Cycled Temperature
The following equation canbe used to calculate a weighted characteristiclife for both bearings and windings
(e.g., for bearings substituteaB for all a's in equation).
+
hl
a =h 2h l
-+
a
where:
1
a
h2
+
h3 +-""-h,
-+
h- 3
+
2
"3
"""_
a
=
either aB or aw
hl
=
TimeatTemperature Tl
h2
=
Time to Cycle From Temperature Tl to T3
h3
=
TimeatTemperatureT3
hm
=
TimeatTemperatureTm
al =
a2
=
NOTE:
hm
am
Bearing (or Winding) Life atTl
Bearing (or Winding) Life at T2
T2 =
T1 + T 3
, T4 =
T3
2
+
Hours (h)
Thermal Cycle
Supersedes page 12-3 of Notice 1
Document provided by IHS.
12-3
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004
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CHG N O T I C E 2
MIL-HDBK-217F
H 9999970 0397062 02T
MIL-HDBK-217F
NOTICE 2
AND RESOLVERS
ROTATING DEVICES,
SYNCHROS
12.2
DESCRIPTION
Rotating Synchrosand Resolvers
IC
%=‘b
n x Failures/106Hours
S N E
NOTE: Synchros and resolvers are predominately used in service requiring only slowand infrequent motion.
so that the electrical failure mode dominates, and no
Mechanical wearout problems are infrequent
in the model above.
mechanical mode failure rate is required
‘b
.O083
.O088
.O095
.o1 o
.o1 1
.O1 3
30
35
40
45
50
55
60
65
70
75
80
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
\
TF
.O32
.O41
.O69
,094
.13
.19
.29
.45
.74
1.3
110
115
120
125
.o1 9
.o22
.O27
(
TF+273
= .O0535 exp
334
)
8.5
-
Size 8 or
Smaller
xS
Size 10-16
Size 18 or
2.5
4
3.2
2
1.5
1
Resolver
3
2.25
1.5
J
Environment Factor- IC=
L
Environment
TE
GB
1.o
GF
2.0
NU
12
7.O
18
AIC
4.0
AIF
6.0
AUC
16
AUF
25
ARW
26
.50
SF
Synchro
Document provided by IHS.
3
NS
Size Factor nS
12-4
1.4
GM
Frame
Temperature
(“C)
If Frame Temperatureis Unknown Assume
TF = 40 “C + Ambient Temperature
DEVICE
TYPE
12
.O52
.O14
.O16
=
Number of Brushes Factor- nN
Number of Brushes
ICN
MF
14
ML
36
CL
680
Supersedes page 12-4 of Notice 1
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~~
~
MIL-HDBK-217F C H G N O T I C E 2
7 9 9 9 9 7 0 0197063 T b b
MIL-HDBK-217F
NOTICE 2
12.3
ROTATING
DEVICES,
ELAPSED
TIME
METERS
DESCRIPTION
Elapsed Time Meters
h, = hbynEFailures/l O6 Hours
Environment Factor - nCE
Base Failure Rate- A,+.
I
I
I
Type
Inverter
Driven
Commutator D.C.
Environment
I
I
“E
1 .o
2o
2.0
30
12
I
80
7.0
18
5.0
Temperature Stress Factor - ‘CT
8.0
Operating T (OC)/Rated
T (“c)
o to
16
.5
25
.a
1 .o
I
.50
.8
14
1.0
38
NIA
Supersedes page 12-5 of Revision F
Document provided by IHS.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
26
12-5
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MIL-HDBK-217F
NOTICE 2
13.1
SPECIFICATION
MIL-R-5757
MIL-R-83516
MIL-R-6106
MIL-R-83520
MIL-R-83536
MIL-R-13718
MIL-R-83725
MIL-R-19648
MIL-R-19523
MIL-R-83726
(Except
Class
MIL-R-39016
P'
DESCRIPTION
Mechanical
Relay
Type)
C, Solid
State
X
= 'bxLKC"CYC
F7tQ E Failures/106 Hours
Load Stress Factor - xI
Base Failure Rate- A+,
TA ("C)
25
30
35
40
45
1.
l,,
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
=
(
(
.1 o
.20
.30
.40
.50
.60
.70
.80
.90
1.o0
.O066
.O073
.O081
.O089
.O098
.o1 1
.o12
.O13
.O14
.O15
.O17
.O18
.o19
.o2 1
.o22
.O24
.O26
.O27
.O29
.O067
.O075
.O084
.O094
.o1 o
.o12
.O13
.O14
.O1 6
.O1 7
.o1 9
.o21
.O059 exp
-.19
8.617 X 10-5
[
1
-.17
8.617 X 10-5
[
1
2.
SPDT
4PST
4PDT
6PDT
1.O6
1.28
1.76
2.72
4.77
9.49
21.4
2.72
9.49
2.1 5
2.72
3.55
4.77
1
nL = exp
1.28
54.6
a
(3)
E
rating Load Current
HatzResistive Load Current
For single devices which switch
two different load types,
evaluate nL for each possible stress load type
nL).
combination and use the worse case (largest
1
-
z])
-
z])
1
Cycling Factor- xcYc
Cycle Rate
(Cycles per
MIL-SPEC
Hour)
2 1.0
Ambient
Temperature
("C)
Contact Form Factor - xc
(Applies to Active Conducting Contacts)
Contact Form
nC
SPST
Resistive
.05
.o059
2. l,,= .O059exp
TA
5
850C1
50
55
60
65
70
75
80
85
90
95
1O0
105
110
115
120
125
RELAYS,
MECHANICAL
Rate
xcYc
> 1000
1.o0
1.50 DPST
1.75
2.00 3PST
2.50
3.00 DPDT
4.25 3PDT
5.50
8.00
Cycle
(Cycles
Hour)
per
(Commercial
Quality)
1
-
10 10 1000
1
Cycles per Hour
basic design limitationsof the relay are not valid. Design
specifications should be consulted prior
to evaluation of
%YC
1
Supersedes page 13-1 of Revision F
Document provided by IHS.
13-1
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004
10:42:07 MDT Questions or comments about this message: please call the Document
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MIL-HDBK-217F CHG NOTICE
2
m 9999970 0397065 839
=
MIL-HDBK-217F
NOTICE 2
RELAYS, MECHANICAL
Quality Factor - 7cC
1
r
Quality
-
R
.1o
P
.3O
X
.45
U
.60
M
1 .o
L
1.5
MIL-SPEC, Non-Est. Rel.
- "F
APlplication and Construction Factor
Application
Construction
Contact
Rating
TV De
Type
Dry
Circuit
Armature (Long)
Signal
Dry Reed
Current
Mercury Wetted
(Low mv
Magnetic Latching
and ma)
Balanced Armature
Solenoid
1
0-5 Amp
Armature
(Long)
1
General
Armature
Purpose
Sensitive
-
(O 100 mw)
1.5
Commercial
2.9
L
GB
"E
1 .o
=F
2.0
GM
Vibrating
Reed
High Speed
15
8.0
27
AIC
7.0
AIF
9.0
AUC
11
AUF
12
ARW
46
SF
13-2
Document provided by IHS.
5-20 Amp
.50
MF
25
ML
CI
66
1O0
Polarized
Environment Factor- SC,
Environment
Armature (Long and
Short)
Mercury Wetted
Magnetic Latching
Movement
Meter
Balanced Armature
i
7
3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
13.1
Short)
Thermal Time
Delay
Electronic
Time Delay,
Non-Thermal
Latching,
Reed
Dry
Magnetic Wetted
Mercury
armature
Balanced
High Voltage
20 (Glass)
Vacuum
(Ceramic)
Vacuum
Medium
Armature
(Long
and
Power
Short)
Wetted
Mercury
Latching
Magnetic
Mechanical
Latching
2
Balanced
Armature
I
r
10
5
Solenoid
25-600
Amp
Contactors
(High
Current)
Armature (Short)
Mechanical Latching
Balanced Armature
N/A
page
Supersedes
13-2 of Revision F
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5
5
3
1
2
3
2
MIL-HDBK-217F
7999970 OL970bb 7 7 5
CHG NOTICE 2
MIL-HDBK-217F
NOTICE 2
13.2
RELAYS, SOLID STATE AND TIME DELAY
DESCRIPTION
Relay, Solid State
Relay, Time Delay, Hybrid and Solid State
SPECIFICATION
MIL-R-28750
MIL-R-83726
of solid state (and solid state time delay) relays
is to sum
The most accurate method for predicting the failure rate
the failure rates forthe individual components which makeup the relay. The individual component failure rates
can either be calculated from the models provided
in the main body of this Handbook (Parts Stress Method) or
from the Parts Count Method shown in Appendix A, depending upon the depth of knowledge the analyst has
about the components being used. If insufficient information is available, the following default model can be
used:
hp
A ~ ~ c c Failures/106
Q~c~
Hours
=
Base Failure Rate-
I
Environment Factor- xE
I
Type Relay
hh
Solid State
.O29
Solid State Time Delay
.O29
I
Environment
GB
1.o
GF
3.0
GM
.O29
Hybrid
NS
Quality Factor- zQ
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
I
Quality
I
"0
MIL-SPEC
1.o
Commercial
1.9
I
12
6.0
NU
17
AIC
12
AIF
19
AUC
21
AUF
32
ARW
23
.40
SF
MF
12
ML
33
CL
590
Supersedes page 13-3 of Revision F
Document provided by IHS.
13-3
Document provided by IHS Licensee=Lockheed Martin/4667500100, 05/05/2004
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MIL-HDBK-ZL7F
m 9999770
CHG N O T I C E 2
Ol1970b7 bDL
m
MIL-HDBK-217F
NOTICE 2
SWITCHES
14.1
X X
'P='b
LC
E Failures/106 Hours
IC 7[:
Q
Load Stress Factor-
Base Failure Rate- 2
Description
Centrifugal
Dual-In-line Package
Limit
Liquid Level
Microwave
(Waveguide)
Pressure
Pushbutton
Reed
Rocker
Rotary
Sensitive
Thermal
Thumbwheel
Toggle
Spec.
M IL-S-
Ab (F/106 Hrs.)
NIA
83504
8805
21 277
N/A
3.4
.o0012
4.3
2.3
1.7
8932
9395
121 1
8805
22885
2431 7
55433
3950
22885
3786
13623
15291
15743
22604
2271O
45885
82359
8805
13484
2261 4
12285
24286
2271 O
3950
5594
8805
8834
941 9
13735
81551
83731
2.8
.1o
Stress
S
0.05
o. 1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.o
1.28
1.48
1.76
2.1 5
2.72
3.55
Operating Load Current
Rated Resistive Load Current
S=
.o010
.O23
XL
.11
xL
p
Load Type
Inductive
1.o2
1.O6
1.28
1.76 1.15
2.72
4.77
9.49
21.4
Resistive
1.o0
1 .o2
1.O6
=
exp
(S/.8)2
for Resistive Load
=
exp
(S/.4)2
for Inductive Load
=
exp
(S/.2)2
for Lamp Load
NOTE: When the switch is rated by inductive load,
then use resistive xI .
.49
Contact Configuration Factor'- X-
L
Ø
.O31
## of Contacts,
Contact Form
-18
.1o
SPST
DPST
SPDT
3p5t
4p5t
DPDT
3PDT
4PDT
6PDT
NC
1
2
2
3
4
4
6
8
12
ICC
1.o
1.3
1.3
1.4
1.6
1.6
1.8
2.0
2.3
KC = (NC). 33
Applies to toggle and pushbutton switches only,
all others usexC = 1.
Supersedes
page
Document provided by IHS.
14-1 through 14-4 of Revision F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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14-1
MIL-HDBK-ZL7F C H G N O T I C E 2
9 9 9 9 9 7 0 OL970b8 5 4 8
MIL-HDBK-217F
NOTICE 2
SWITCHES
14.1
Quality Factor - xQ
I
Quality
1
Environment
XQ
1
I
Environment
MIL-SPEC
1
GB
1 .o
Lower
2
GF
3.0
I
I
I
GM
18
8.0
NS
NU
29
AIC
10
AIF
18
13
AUC
AUF
22
ARW
46
.50
SF
I
MF
25
ML
67
CL
1200
Supersedes page 14-1 through 14-4 of Revision F
14-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Document provided by IHS.
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MIL-HDBK-217F
NOTICE 2
SWITCHES, CIRCUIT
BREAKERS
14.2
DESCRIPTION
Circuit Breakers, Manual and Automatic
Circuit Breakers, Magnetic, Unsealed, Trip-Free
Circuit Breakers, Remote Control, Thermal, Trip-Free
Circuit Breakers, Magnetic,Low Power, Sealed, Trip-Free Service
Circuit Breakers, Molded Case, Branch Circuit and Service
SPECIFICATION
MIL-C-13516
MIL-C-55629
MI L-C-83383
MIL-C-39019
w-c-375
h, = h b ~ C 7 t U ~Failures/l
Q~E
O6 Hours
Quality Factor- ~n
Base Failure RateDescription
‘b
Magnetic
.34
Thermal
.34
Thermal-Magnetic
.34
1
I
I
I
Quality
nQ
MIL-SPEC
1.o
I
Lower
8*4
I
Environment Factor- 7tr
L
Environment
Configuration Factor- nc
Configuration
GB
1 .o
GF
2.0
GM
DPST
NS
3PST
3.0
4PST
4.0
Use Factor- zu
Use
Also Used as a Power
On/Off Switch
I
I
1.o
Not Used as a Power
On/Off Switch
I
NU
2.5
27
7.0
AIF
9.0
AUC
11
AUF
12
ARW
46
50
SF
MF
25
ML
66
CL
NIA
14-3
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
b
8.0
AIC
Supersedes page 14-5 of Revision F
Document provided by IHS.
15
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MIL-HDBK-217F CHG N O T I C E 2
9 9 9 9 9 7 0 0377070 17’6
MIL-HDBK-217F
NOTICE 2
15.1
3Lp = hb~TnKnQnE
Failuredl O6
CONNECTORS,
GENERAL
Hours
APPLICATION NOTE: The failure rate model is for a mated pair of connectors. It is sometimes desirable to
assign half of the overall mated pair connector
(Le., single connector) failure rateto the line replaceable unit and
half to the chassis (or backplane). An example of when this would be beneficial is for input to maintainability
prediction to allow a failure rate weighted repair time to be estimated for both the LRU and chassis. This
accounting procedure could be significant if repair times for the two halves of the connector are substantially
different. For a single connector divide A,, by two.
Temperature Factor- nT
Specification
Description
MIL-CCircular/Cylindrical 501 5
26482
26500 27599
28840 29600
38999 83723
3151 1
To (“C)
Card Edge (PCB)*
21 097
55302
.O40
Hexagonal
24055
24056
.15
Rack and Panel
243 08
2873 1
28748
835 15
.o21
Rectangular
21617
24308
28748
28804
81 659
835 1 3
83527
83733
85028
.O46
RF Coaxial
3607
3643
3650
3655
15370
25516
26637
39012
55235
8351 7
20
30
40
50
60
70
80
90
1O0
110
120
130
140
150
160
170
180
190
200
210
220
230
240
250
.o01 o
.O0041
Telephone
55074
.O075
Power
22992
.O070
Triaxial
491 42
.O036
nT
.9 1
1.1
1.3
1.5
1.8
2.0
2.3
2.7
3.0
3.4
3.7
4.1
4.6
5.0
5.5
6.0
6.5
7.0
7.5
8.1
8.6
9.2
9.8
1o.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Base Failure Rate- hU.
To = Connector Ambient + AT
AT = Connector Insert Temperature Rise
(See Table)
Printed Circuit Board Connector
Supersedes page 15-1 through 15-5’ of Revision F
Document provided by IHS.
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15-1
MIL-HDBK-217F
NOTICE 2
CONNECTORS, GENERAL
DefauIlt Insert Temperature Rise
lation
Amperes
ict Gau(L
PerContact
20
16
30
1
2
2
10
2
8
5
3
22
4
4
0
37
13
5
5
56
13
19
8
6
18
27
79
7
23
10
36
8
30
13
46
9
57
37
16
45
19
10
70
15
96
41
70
20
25
106
30
35
40
-
~
12
-O
L
AT
AT
AT
AT
AT
AT
AT
AT
AT
= 3.256 (i)’.85
= 2.856 (i)’ .85
= 2.286 (i)’
= 1.345(i)’
= 0.989 (i)’
= 0.640 (i)’ .85
= 0.429 (i)’ .85
= 0.274
= 0.100 (i)’ .85
AT =
i
=
1
1
2
3
4
5
6
7
15
26
39
54
72
92
RF Coaxial
Connectors
AT = 5°C
RF Coaxial Connectors
(HighPowerApplications)
AT = 50°C
- zK
IFK
O to .O5
1 .o
> .O5 to .5
1.5
> .5 to 5
2.0
> 5 to 50
3.0
*One cycle includes both connect and
disconnect.
Quality Factor - X Q
Quality
-
32 Gauge Contacts
30 Gauge Contacts
28 Gauge Contacts
24 Gauge Contacts
22 Gauge Contacts
20 Gauge Contacts
18 Gauge Contacts
16 Gauge Contacts
12 Gauge Contacts
Insert Temperature Rise
Amperes per Contact
MatingNnmating Factor
MatingNnmating Cycles’
(per 1000 hours)
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
15.1
MIL-SPEC
Lower
Environment Factor
Environment
- nE
GB
XE
1 .o
GF
1 .o
GM
8.0
NS
5.0
NU
13
*IC
3.0
AIF
5.0
AU c
8.0
AU F
12
ARW
19
.50
SF
15-2
Document provided by IHS.
MF
10
ML
27
CL
490
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~~
CHG N O T I C E 2
MIL-HDBK-217F
9997970 0197072 T77 H
MIL-HDBK-217F
NOTICE 2
CONNECTORS, SOCKETS
15.2
'P=%
II: Failures/106 Hours
P Q E
5~ IC
Active Pins Factor- x p
Base Failure Rate- Ilt,
Spec.
MIL-S
'b
Dual-ln-Line Package
83734
.O0064
Single-ln-Line Package
83734
.O0064
Chip Carrier
38533
.O0064
NIA
.O0064
Description
Pin Grid Array
Relay
12883
.O37
Transistor
12883
.O051
Electron Tube, CRT
12883
.o1 1
Quality Factor- xQ
Qualit
MIL-SPEC.
1 .o
Lower
Environment Factor- x=
Number of
Active
Contacts
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
25
30
35
40
45
50
ZP
Active
Contacts
1.o
1.5
1.7
1.9
2.0
2.1
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
4.1
4.5
5.0
5.5
5.9
6.4
55
60
65
70
75
80
85
90
95
1O0
105
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
q
=
N
= Number of ActivePins
nP
6.9
7.4
7.9
8.4
8.9
9.4
9.9
10
11
12
12
13
13
14
14
15
16
16
17
18
18
19
20
20
21
22
.39
An active contactis the conductive element
which mateswith another elementfor the
purpose of transferring electrical energy.
Supersedes page 15-6 of Revision F
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15-3
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Number of
MIL-HDBK-217F
NOTICE 2
INTERCONNECTION ASSEMBLIES
WITH
PLATED
THROUGH
HOLES
16.1
kp = hb[N1
xC
+
N2(xc
+
1
Failures/106 Hours
13)
APPLICATION NOTE: This model applies to board configurations with leaded devices mounted
into the
plated through holes and assumesfailures are predominately defect related. For boards using surface mount
technology, use Section 16.2. For a mix of leaded devices mounted
into plated through holes and surface
16.2 for the surface mountcontribution.
mount devices, usethis model for the leaded devices and use Section
A discrete wiring assembly withelectroless deposit plated through holesis basically a pattern of insulated wires
laid down on an adhesive coated substrate. The primary cause of failure for both printed wiring and discrete
wiring assemblies is associated with plated through-hole (PTH) problems (e.g.,
barrel cracking).
-
Quality Factor- "Q
Base Failure Rate hb
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Printed Wiring Assembly/Printed
Circuit Boards with PTHs
b
'
.O00017
Discrete Wiring with Electroless
.o001 1
Deposited PTH(2 2 Levels of Circuitry)
-
Number of PTHs Factor N1 and N2
Factor
Quantity
N1
Automated Techniques: Quantity of
Wave Infrared (IR) or Vapor Phase
Soldered Functional PTHs
N2
Quality
.
Technology
-
MIL-SPEC or Comparable Institute for
Interconnecting, and Packaging
Electronic Circuits (!PC) Standards
(IPC Level3)
1
Lower
2
-
Environment Factor
Environment
Quantity of Hand Soldered PTHs
Complexity Factor - "C
Number of Circuit Planes, P
s2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
Discrete Wiring w/PTH
"C = .65 P.63
1
.o
"C
1
1.3
1.6
1.8
2.0
2.2
2.4
2.6
2.8
2.9
3.1
3.3
3.4
3.6
3.7
3.9
4.0
I
GB
1 .o
GF
2.0
GM
7.0
NS
5.0
NU
13
AIC
5.0
AIF
8.0
AUC
16
AUF
28
*RW
19
.50
SF
MF
10
ML
27
CL
500
1
2SP118
Supersedes page 16-1 of Revision F
Document provided by IHS.
"E
16-1
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MIL-HDBK-217F
CHG N O T I C E 2
9999970 0377074 841
MIL-HDBK-217F
NOTICE 2
INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY
16.2
APPLICATION NOTE: The SMT Model was developedto assess the life integrityof leadless and leaded
devices. It provides a relative measureof circuit card wearout due to thermal cycling fatigue failure of the
"weakest link SMT device. An analysis should be performed on all circuit board SMT components. The
component with the largest failure rate value (weakest link) is assessed as the overall board failure rate
due to SMT. The model assumes the board is completely renewed upon failure of the weakest link and
the results do not consider solder or lead manufacturing defects. This model is based on thetechniques
developed in Reference 37.
h
s =~ Average
~
failure rate overthe
expected equipment life cycle
due to surface mount device
wearout.
This
failure
rate
contribution to the system is for
theSurfaceMountDeviceon
each
board
exhibiting
the
highest absolute value of the
strain range:
ECF
=
Temperaturecyclingrate in
cycles per calendar hour. Base
on a thermal analysisof the circuit
board. Use table default values if
other estimates do not exist.
Nf
=
Averagenumberofthermal
cycles to failure
where:
d
=
Distance from center of device to
the furthest solder joint in mils
(thousandths of an inch)
h
=
Solder
joint
height
mils
in
for
leadless devices. Default to h = 8
for all leaded configurations.
as
=
Circuit board
substrate
thermal
coefficient of expansion(TCE)
.41
.51
AT
=
-61
.68
.76
Use
environment
temperature
extreme difference
WC
=
Package
material
thermal
coefficient of expansion (TCE)
Effective cumulative
number
failures
Weibull
the
over
characteristic
life.
=
of
Effective Cumulative Failures- ECF
LC
ECF
aSMT
0 -.1
.11 .20
.21 - .30
.31 - .40
.41 - 50
.51 - .60
.61 - .70
.71 - .80
.81 - .90
> .9
.13
.15
-
I
LC
=
~ S M T=
where:
CR
.23
.31
I
1.o
Design
life
cycle
of the
equipment in which the circuit
board is operating.
TheWeibull characteristic life.
C~SMT
is a functionof device and
substrate material, themanufacturing methods,
and
the
application environment used.
Pd
=
eJCP
8JC
=
=
Thermal resistance "/Watt
Power Dissipation (Watts)
P
nLC =
to power
Temperaturerisedue
dissipation (Pd)
TRISE =
Leadconfigurationfactor
New Page
16-2
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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VIL-HDBK-217F
9 9 9 7 9 7 0 0397075 788
CHG NOTICE 2
MIL-HDBK-217F
NOTICE 2
16.2
INTERCONNECTIONASSEMBLIES,SURFACEMOUNTTECHNOLOGY
as
- - Default TCE Substrate Values
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
CR - Cycling Rate Defat Values
Number of
Equipment Type
Cycles/Hour
1.o
Automotive
.O8
Consumer (television, radio,
recorder)
.17
Computer
Telecommunications
.O042
Commercial Aircraft
.25
.o21
Industrial
.O3
Military Ground Applications
.12
Military Aircraft (Cargo)
.5
Military Aircraft (Fighter)
I
"LC
Substrate Material
- Lead Configuration Factor
Lead Configuration
Leadless
J or S Lead
Gull Wing
I
"LC
1
150
5,000
a m - TCE Packaae Values
1
-Material
I orcc AverageValue
I
I
I
I
Plastic
Ceramic
7
6
AT - Use Environment Default
Temperature Difference
AT
Environment
7
GB
GM
21
26
NS
26
NU
61
AIC
AIF
AUC
AUF
ARW
31
GF
31
57
57
31
F R 4 Laminate
F R 4 Multilayer Board
FR-4 Multilayer Board w/Copper
Clad Invar
Ceramic Multilayer Board
Copper Clad Invar
Copper Clad Molybdenum
Carbon-Fiber/Epoxy Composite
Kevlar Fiber
Quartz Fiber
Glass Fiber
Epoxy/Glass Laminate
Polyamide/Glass Laminate
Polyamide/Kevlar Laminate
PolyamidelQuartz Laminate
Epoxy/Kevlar Laminate
Alumina (Ceramic)
Epoxy Aramid Fiber
Polyamide Aramid Fiber
Epoxy-Quartz
Fiberglass Teflon Laminates
Porcelainized Copper Clad Invar
Fiberglass Ceramic Fiber
7
MF
N/A
N/A
MT
=
-
5
5
1
3
1
5
15
13
6
8
7
7
7
6
9
20
7
7
N/A
aSMT
=
Nf
CR
ECF
aSMT
New Page
Document provided by IHS.
7
EXAMPLE: A large plastic
encapsulated
leadless chip carrier is mounted on a epoxyglassprintedwiringassembly.Thedesign
considerations are: a square package
is 1480
mils on a side, solder height is 5 mils, power
is
dissipationis .5 watts,thermalresistance
20°C/watt,thedesignlife
is 20yearsand
environment is military ground application. The
failure rate developed is the impact of SMTfor a
single circuit board and accounts for all SMT
devices on this board. This failure rate is added
to the sum of all of the component failure rates
on the circuit board.
SF
ML
CL
18
20
11
16-3
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flIL-HDBK-237F
CHG N O T I C E 2
m
9999970 039307b b 3 4
m
MIL-HDBK-217F
NOTICE 2
16.2
INTERCONNECTIONASSEMBLIES, SURFACE MOUNTTECHNOLOGY
= 5 mils
hFor
h:
For as:
as = 15 (Table - EpoxyGlass)
For AT:
AT = 21 (Table - GF)
For act:
W C = 7 (Table - Plastic)
For TRISE:
TRISE = 8JcP = 20(.5)= 10°C
For nLC:
~ L =C1 (Table - Leadless)
For CR:
CR = .O3 cycles/hour(Table
Nf
LC
=
18,893 thermal cycles to failure
=
.O3
18,893
cyledhour
cycles
= 629,767 hours
(20 yrs.) (8760
-
F)
"
%MT
ECF
MT
h
s
- MilitaryGround)
629,767 hrs.
= .28
=
.23 failures (Table - EffectiveCumulativeFailures)
=
.23 failures= ,0000004 failuredhour
aSMT E 629,767 hours
=
~
.4
~failures/l O6 hours
ECF
New Page
16-4
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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NIL-HDBK-217F
CHG N O T I C E 2
9999970 0377077 550
MIL-HDBK-217F
NOTICE 2
17.1
CONNECTIONS
APPLICATION NOTE: The failure rate model in this section applies to connections used on all assemblies
except those using plated through holes or surface mount technology. Use the Interconnection Assembly
Model in Section 16 to account for connections to a circuit board using either plated through hole technology
or surface mount technology. The failure rate of the structure which supports the connections and parts, e.g.,
non-plated-through hole boards and terminal straps,
is considered to be zero. Solderless wrap connections are
characterized by solid wire wrapped under tension arounda post, whereas hand soldering with wrapping does
not depend on a tension induced connection. The following model isfor a single connection.
3p = %xE
Base Failure Rate- L
U
Environment Factor- x ,
+, (FAO6 hrs)
Hand Solder, w/o Wrapping
.O013
Hand Solder, w/Wrapping
.O00070
Crimp
.O0026
Weld
.O00015
Solderless Wrap
.O000068
Clip Termination
.o001 2
Reflow Solder
.O00069
Spring Contact
.17
Terminal Block
.O62
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Connection Type
Failures/l O6 Hours
Supersedes page 17-1
17-1
of Revision F
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NIL-HDBK-ZL7F
m 9999970 O070860 8 m
RE
:
.
MIL-HDBK-217F
METERS, PANEL
18.1
DESCRIPTION
Meter, Electrical Indicating, Panel Type, Ruggedized
SPECIFICATION
MIL-M-1 0304
X P % AXF XQ
X
n:E Failures/106 Hours
-
-
Ease Failure Rate L
I
Quality Factor zn
I
I
All
I
.o90
- ..
I
Quality
"O
MIL-"10304
1 .o
Lower
3.4
Application Factor
I
I
Application
1
XA
Environment Factor- x ,
L
1 .o
Direct Current
Alternating Current
I
Environment
1.7
I
I
I
NS
12
NU
35
AIC
28
AlF
42
1.o
AUC
58
Other'
2.8
AUF
73
ARW
60
*F
1.o
Ammeter
.Voltmeter
-
I
I
~~
~
' Meters whose basic meter movement construction
is an ammeterwith associated conversion elements.
I
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Document provided by IHS.
4.0
25
-
Function
GF
GM
Function Factor xc
I
GB
"E
1 .o
-
SF
1.1
MF
60
ML
NIA
CL
NIA
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I
I
I
.
.
.
.
.
.
.
~
. ..
.
-
"
"
.
..
.
.
.
'
MIL-HDBK-237F
- .
:
RE
m
9 9 9 9 9 7 00 0 7 0 8 6 3
T
m
~~
MIL-HDBK-217F
19.1
QUARTZ CRYSTALS
DESCRIPTION
Crystal Units, Quartz
SPECIFICATION
MIL-C-3098
x Failures/106Hours
X
'P = 'b Q E
-
Environment Factor zE
Base Failure
Frequency, f(MHz)
0.5
1.O
5.0
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
105
Environment
"b
GB .
.o1 1
.O13
.o19
.o22
,024
.O26
.O27
.O28
,029
.O30
.O31
,032
,033
.O33
.O34
.O35
.O35
.O36
.O36
.O37
.O37
.O37
,038
.
.
GF
GM
NS
NU
r
.
.
.
AIC
AIF
"E
1 .o
3 .O
10
6.0
16
12
17
AUC
22
AUF
28
ARW
23
.50
SF
i
MF
13
ML
32
CL
500
_ .
hb =
.013(f)*23
-
I
Quality
I
Xn
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
Quality Factor zQ
I
MIL-SPEC
Lower
19-1
Document provided by IHS.
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NIL-HDBK-ZL7F R E
9999970 0070862
L
MIL-HDBK-217F
SPECIFICATION
escent,Lamps, MIL-L-6363
w-L-111
Tungsten-Filament
Miniature,Incandescent, Lamps,
DESCRIPTION
h, = X , , ~ C ~ I CFailuredl
~K~
O6 Hours
L
APPLICATION NOTE: The data used to develop this model included randomly occurring catastrophic failures
and failures dueto tungsten filament wearout.
-
-
Environment Factor K,
Base Failure Rate?+,
I
l
V, (Volts)
Voltage,
Rated
I
I
I
Ah
I
I
I ::: II
5
6
12
14
24
59
.75
1.8 .
5.4
28
37.5
-
I
Utilization Factor nu
Utilization (IlluminateHourd
Equipment Operate Hours)
leu
< 0.10
0.10
0.10 to 0.90
0.72
> 0.90
.
I
. 1.0
I
-
Application Factor K .A _
Application
I
Alternating Current
1 .o
Direct Current
3.3
20-1
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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.
.
..
.
'
RE
MIL-HDBK-217F
..
9 9 9 9 9 7 0 0070863 3 E
MIL-HDBK-217F
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
2 1.1
.
ELECTRONICFILTERS,NON-TUNABLE
DESCRIPTION
Filters, Radio Frequency Interference
Filters, High Pass, Low Pass, Band Pass, Band
Suppression, and Dual Functioning (Non-tunable)
SPECIFICATION
MIL-F-15733
MIL-F-18327
is to sum the failure rates for the individual
The most accurate wayto estimate the failure rate for electronic filters
components which makeup the filter (e.g., IC's, diodes, resistors, etc.) using the appropriate models provided in
this Handbook. The Parts Stress models or the Parts Count method
given in Appendix A can be used to
determine individual component failure rates. If insufficient information is. available then the following default
model canbe used.
A,, =
XQ
-
Environment Factor - 7cc .
Base Failure Rate At,
,
XE FailuresUO6 Hours
I:
TY Pe
'b
MIL-F-15733, Ceramic-Ferrite
Construction (StylesF i 10-16, 22,
24, 30-32, 34,35, 38, 41-43, 45,
47-50, 61-65, 70, 81-93, 95, 96)
,022
MIL-F-15733, Discrete LC
Componentsi (Styles FL 37, 53, 74)
.12
MIL-F-18327, Discrete LC
Components (Composition 1)
.12
MIL-F-18327, Discrete LC and
CrystalComponents .
(Composition 2)
.27
Environment.
I
"E
7.0
9.0
11
13
11
.80
7.0
Quality Factor- Z n
15
Quality
120
MIL-SPEC
Lower
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MIL-HDBK-217F
RE
7777778 0870Bb4 5
:
~~
MIL-HDBK-217F
FUSES
22.1
DESCRIPTION
Fuse, Cartridge ClassH
Fuse, Cartridge, High Interrupting Capacity
Fuse, Current Limiter Type, Aircraft
Fuse, Instrument Type
Fuse, Instrument, Power and Telephone
(Nonindicating), Style F01
SPECIFICATION
W-F-1726
W-F-1814
MIL-F-5372
ML-F-23419
MIL-F-15160
b
hp
=
+,ICEFailures/106 Hours
APPLICATION NOTE: The reliability modeling of fusespresentsauniqueproblem.’Unlikemostother
components, there is very little correlation between the numberof fuse replacements and actual fuse failures.
Generally whena fuse opens, or “blows,” something elsein the circuithas created-anoverload conditionand the
fuse is simply functioning as designed. This model is based on life test data and represents fuse open and
A short failure mode is most commonly
shorting failure modes due primarily to mechanical fatigue and corrosion.
caused by electrically conductive material shorting the fuse terminals together causing a to
failure
open condition
when rated current is exceeded.
-
Environment Factor- xE
Base Failure Rate $
TY Pe
I
I
L
I
Environment
W-F-1726, W-F-1814, MIL-F5372, MIL-F-23419, ML-F-15160
I
GB
xCE
1.o
GF
2.0
GM
8.0
NS
5.0
I
11
NU
9.0
AIC
12
AlF
AUC
a
15
.
AUF
18
ARW
16
.9o
SF
MF
10
ML
21
CL
230
22-1
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23.1
MISCELLANEOUS
PARTS
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
h,-. Failure
P
Rates for Miscellaneous Parts
(Failures/lO6 Hours)
Failure Rate
Part Type
Vibrators (MIL-V-95)
60-cycle
120-cycle
400-cycle
15
20
40
Lamps
Neon Lamps
0.20
Fiber Optic Cables (Single Fiber Types Only)
0.1 (Per Fiber Km)
Single Fiber Optic Connectors'
0.10
Microwave Elements (Coaxial &Waveguide)
Attenuators (Fixed& Variable)
-
See Resistors, TypeRD
Fixed Elements (Directional Couplers, Fixed Stubs
& Cavities)
Negligible
0.10
Variable Elements (Tuned Stubs& Cavities)
Microwave Ferrite Devices
Isolators & Circulators (51OOW)
Isolators & Circulators (>1OOW)
Phase Shifter (Latching)
Dummy Loads
< 1oow
1oow to I 1ooow
0.030
X
ZE
> 1ooow
-Terminations (Thin or Thick Film Loads Used
in Stripline and Thin
Film Circuits)
0.030X "E
'Caution: Excessive Mating-Demating Cycles May Seriously Degrade Reliability
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23.1
MISCELLANEOUS PARTS
- IC,
Environment Factor- nE
Environment Factor
L
(Dummy L .ds)
Environment
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
(Microwave Ferri Devices)
Environment
"E
1.o
2.0
8.0
5.0.
12
,
"E
GB
1 .o
GF
2.0
10
GM
5.0
NS
NU
'
17
5.0
*IC
6.0
8.0
AlF
8.0
7.0
AUC
14
11
AUF
22
17
ARW
25
.50
9.0
24
ML
450
CL
-
.50
SF
MF
.
-
.
14
36
660 .
23-2
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MIL-HDBK-217F
APPENDIX A:
PARTS
COUNT
RELIABILITY
PREDICTION
-
Parts Count Reliability Prediction This prediction method is applicable during bid proposal
and early design phases when insufficient information is available to use the part stress analysis models
shown in the main bodyof this Handbook. The information needed to apply the method is (1) generic part
types (including complexity for microcircuits) and quantities, (2) pait quality levels, and (3)equipment
environment. The equipment failure rate is obtained by looking up a generic failure rate in one of the
following tables, multiplyingit by a quality factor, andthen summing it with failure rates obtainedfor other
components in the equipment. The general mathematical expression for equipment failure rate with this
method is:
Equation 1
for a given equipment environment where:
hEQUIP =
Totalequipmentfailurerate(Failures/106Hours)
=
Generic failure rate for thei th generic part (FailuredlO6 Hours)
"Q
=
Quality factor for the i th generic pari
Ni
=
Quantity
of
n
=
Numberofdifferentgeneric
hg
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
i th generic
part
pari categories in the equipment
Equation 1 applies if the entire equipment is being used in one environment.
If the equipment
comprises several units operating in different environments (such as avionics systems with units in
airborne inhabited (Al) and uninhabited (AU) environments), then Equation 1 should be applied to the
portions of the equipment in each environment. These "environment-equipment" failure rates should be
added to determine total equipment failure rate. Environmental symbols are defined in Section 3.
The quality factorsto be usedwith each part type are shown
with the applicable hgtables andare not
necessarily the same values that are used in the Part Stress Analysis. Microcircuits have an additional
multiplying factor, xL, which accounts for the maturity of the manufacturing process. For devices in
production two years or more, no modification is needed. For those in production less than two years, h
9
should be multiplied by the appropriate
5tL factor (See pageA-4).
It should be noted that no generic failure rates are shown for hybrid microcircuits. Each hybrid
is a fairly
uniquedevice. Sincenone of thesedevices have beenstandardized, their complexitycannot be
determined from their name or function. Identically or similarly named hybrids can have a wide rangeof
complexity that thwarts categorizationfor purposes of this prediction method. If hybrids are anticipated for
a design, their use and construction should be thoroughly investigated on an individual basis with
application of the prediction modelin Section 5.
The failure rates shown in this Appendix were calculated by assigning model default values to the
failure rate models of Section 5 through 23. The specific defauR values used forthe model parameters are
shown with theh Tables for microcircuits. Default parameters for all other part classes are summarized
in
9
the tables starting on Page A-12. For partswith characteristics which differ significantly from the assumed
defaults, or parts used in large quantities, the underlying models in the main body of this Handbook can
be used.
A-1
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NOTICE 2
APPENDIX A:
PARTS
COUNT
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NOTICE 2
APPENDIX A:
PARTS COUNT
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A-3
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k:
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NOTICE 2
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NOTICE 1
PARTS COUNT
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
APPENDIX A:
A-6
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NOTICE 2
APPENDIX A:
E E
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COUNT
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NOTICE 2
APPENDIX A:
PARTS COUNT
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Em
a
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A-1 1 of Notice 1
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:
A:
PARTS COUNT
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--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
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APPENDIX B:
'
a
,
b
VHSICIVHSIC-LIKE AND VLSl
CMOS-(DETAILED MODELL
This appendix contains the detailed version of the
VHSICNLSI CMOS model containedin Section 5.3. It
is provided to allow more detailed device level design trade-offs
to be accomplishedfor predominate
failure modes and mechanisms exhibited
in CMOS devices. Reference30 should be consulted for a
detailed derivationof this model.
VHSICNHSIC-I IKF FAll URF RATF MODFL
+..&TCt)
b N ( t ) + &Ac + km + hls(t)
Predicted Failure Rate asa Function of Time
Oxide Failure Rate
*Metallization Failure Rate
Hot Carrier Failure Rate
Contamination Failure Rate
Package Failure Rate
EOS/ESD Failure Rate
Miscellaneous Failure Rate
The equations for each of the above failure mechanism failure rates are as follows:
.
A
l
3
ATYPEo~
a
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
I
Total Chip Area(in cm2)
.77 for Custom and Logic Devices,
1.23 for Memories and Gate Arrays
B- 1
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APPENDIX B:
VHSIC-VHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
OXlnF FAll URF RATF FQUATION (CONTINUED)
.21 cm2
3
gJ
-
Oxide Defect Density (If unknown, use where X. = 2 prn and X, is the feature
size of the device)
..
1 Defect/cm2
Effective Screening Time
(Actual Time of Test
(in I O 6 hrs.)) (ATox (at junction screening
temp.)’ (in OK))*
ATOX
3
TemperatureAccelerationFactor, =
(where TJ = Tc
e
-192 (P
1
EOX
+ ~ J C P( i n
exp
[
-.3
8 . 6 1 7 ~ 1 0 ’(L
~TJ
-
k)]
OK))
- 2 1. 5 )
Maximum Power Supply Voltage
VDD, divided by the gate oxide thickness(in
MV/cm)
/
(QML) = 2 if on QML, .5 if not.
If
Sigma obtained from test data of oxide failures from the same or similar process.
not available, use aooxvalue of 1.
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APPENDIX B:
VHSICIVHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
jylFTAl FAll URF RATF EQUATION
2
Total Chip Area (incm )
.88 for Custom and LogicDevice;, 1,12
for Memory and Gate Arrays
2
X0
Metal Defect Density (If unknown use
(-)
where X0 = 2 pm and Xs is the feature size of
XS
the device)
2
1 DefecVcm
Temperature Acceleration Factor
Effective Screening Time
(in 106 hrs.)
A(atScreeningTemp.
(in OK))
TMET
(QML)
3 8 8 (Metal Type)
6 .
(ActualScreeningTime (in 10hrs))
(in lo6 hrs.)
J2 A
TMET
(QML) = . 2 if on QML, .5 if not.
Metal Type = 1 for AI, 37.5 for AI-CU or for Al-Si-Cu
The mean absolute value of Metal Current Density
(in 1O6 Amps/cm2)
sigma obtained from test data
on electromigration failures from the same or a similar
process. If this data isnot available usedMET
= 1.
time (in lo6 hrs.)
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I
m
9 9 9 9 9 7 00 0 7 0 8 8 8
8
m
MIL-HDBK-217F
APPENDIX B:
VHSIC-VHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
HOT CARqlFR F M URF RATF FQUATION
(QML) = 2 if on QML, .5 if not
o
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
.
.O39
8.61 7x1O'5
(
1
TJ
k)]
(where TJ = T ~ eJ$
+
=
DrainCurrentatOperatingTemperature.
'sub
=
SubstrateCurrentatOperatingTemperature.
-0058 e -*o0689TJ (in OK) (mA)
'sub =
%c
=
sigmaderivedfromtestdata,
t0
=
.hcoN
=
.O00022 e
10
=
Effective
Screening
Time
=
ATcon
=
time (in lo6 hrs.)
Id
(at
Screening
Temp.(in
-.O028 to
ATCON
(in OK))
If unknownuse Id = 3.5 e -.O0157 TJ (in O K ) ( m ~ )
If unknownuse
if not availableuse 1.
OK))
e
* (Test
Duration
-.O028
in lo6 hours)
t
(at screening junction temperature
(in O K ) )
(actual screening timein lo6 hrs.)
B-4
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MIL-HDBK-217F RE m 9999970 0070889 T
~-
MIL-HDBK-217F
APPENDIX B:
VHSlCNHSlC-LIKE AND VLSl CMOS (DETAILEDMODEL)
PACKAGF FAILURF RATF F-QUATION
xPAC
=
(.O024 + 1.85 X 10-5(#Pins)) ZE nQ "PT
xE
=
See
Section
ZQ
=
See Section 5.10
+ %H
Package Type Factor(llpT)
Type
I
I
Package
DIP
Pin Grid Array'
Chip Carrier (Surface Mount Technology)
I
=PT
1.o
2.2
4.7
-
Package Hermeticity Factor
O for Hermetic Packages
I
.
-exp
tapH
'399 H; [
%( ln(t) - In(t50pH)) 1' forplasticpackages
Ambient Temp. (in OK)
[
(k
e)]
5230
+ (1-DC)(RH) whereTJ =Tc
(WRH) e
(for example,for 50% Relative Humidity, use RH= 50)
+ eJCP (in
OK)
.74
time (in lo6 hrs.)
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5.10
.
MIL-HDBK-217F
RE
.
'
1
.
.
.
i
.
m 9999970 0070890 b
W ,
MIL-HDBK-217F
APPENDIX B:
VHSIC-VHSIC-LIKE AND VLSl CMOS (DETAILED MODEL)
FOS/FSD FA11 URF RATF FQUATION
-.O002 VTH
kOS
-ln (1 - .O0057 e
,00876
=
.
VTH = ESD Threshold of the device using a100 pF, 1500 ohm discharge model
= Temperature Acceleration Factor
=
exp[
-.423
where TJ = Tc + eJ$
to =
t
(in O K )
EffectiveScreeningTime
=
ATMls (at Scleening Temp, (in
=
time (in lo6 hrs.)
OK))
* Actual Screening Time(in lo6 hours)
6-6
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.
..
. ..
..
.
., .
..
.
.
. .
' .
.
MIL-HDBK-217F
RE
= 9999970
c1070891
B W
MIL-HDBK-217F
APPENDIX C :
z
r
.
BIBLIOGRAPHY
Publications listed with "AD" numbers may
be obtained from:
i
National Technical Information Service
5285 Port Royal Road
Springfield, VA22151
(703) 487-4650
U.S. Defense Contractors may obtain copies from:
Defense Technical Information Center
'
CameronStation FDA,Bldg. 5
Alexandria, VA 22304-61 45
(703) 274-7633
-
"L": These documents arein a
Documents with AD number prefix with the letter "B" or with the suffix
"Limited Distribution" category. Contact the Defense Technical Information Center for ordering
procedures.
Standardization Document Order Desk
700 Robins Ave.
Building 4, Section D
Philadelphia, PA 191 11-5094
(215) 697-2667
The year of publication of the Rome Laboratory (RL) (formerly Rome Air Development Center (RADC))
documents is part of the RADC (or RL) number; e.g., RADC-TR-88-97 was published
in 1988.
1
.
"Laser Reliability Prediction," RADC-TR-75-21 O, ADA016437.
2. "Reliability Model for Miniature Blower Motors Per MIL-8-23071 B," RADC-TR-75-178, AD A013735.
3.
"High Power Microwave Tube Reliability Study," FAA-RD-76-172, AD A003361 2.
4."ElectricMotorReliabilityModel,"RADC-TR-77-408,
5.
'
ADA050179.
"Development of Nonelectronic Part Cyclic Failure Rates," RADC-Tk-77-417, AD A050678.
This study developed new failure rate models for relays, switches, and connectors.
6.
"Passive Device Failure Rate Models for MIL-HDBK-2178," RADC-TR-77-432, AD A050180.
This study developed new failure rate models for resistors, capacitors and inductive devices.
7.
"Quantification of Printed Circuit Board Connector Reliability," RADC-TR-77-433, AD A049980.
8.
"CrimpConnectionReliability,"RADC-TR-78-15,ADA050505
9.
"LSI/Microprocessor
Reliability
Prediction
Model
Development,"
RADC-TR-79-97,
AD
AO689
1O .
"A Redundancy Notebook," RADC-TR-77-287, AD A050837.
Y
P.
11. "Revision
li.
of Environmental Factors for MIL-HDBK-2178," RADC-TR-80-299, AD A091837.
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Copies of MIL-STDS's, MIL-HDBKs, and specifications are available from:
I
MIL-HDBK-ZL7F
RE
9999970 0070892 T D
MIL-HDBK-217F
APPENDIX C:
BIBLIOGRAPHY
12.
"Traveling Wave Tube Failure Rates," RADC-TR-80-288, AD A096055.
13.
"Reliability Prediction Modeling of New Devices," RADC-TR-80-237,AD A090029.
This study-developed failure rate
models for magnetic bubble memories and charge-coupled
memories.
14. "Failure Rates for Fiber Optic Assemblies," RADC-TR-80-322, AD A09231
5.
"Printed Wiring Assembly and Interconnection Reliability," RADC-TR-81-318, ADA l 11214.
--``,,,``,,,``,,`,,`,,`,,,,`,-`-`,,`,,`,`,,`---
15.
for printed wiring assemblies, solderless wrap
This study developed failure rate models
assemblies, wrapped and soldered assemblies and discrete
wiring assemblies with
electroless deposited plated through holes.
16.
"Avionic Environmental Factors for MIL-HDBK-217," RADC-TR-81-374, AD B064430L.
17.
"RADC Thermal Guide for Reliability Engineers," RADC-TR-82-172, A
AD
l 18839.
18.
"Reliability Modelingof Critical Electronic Devices," RADC-TR-83-108, AD
A l 35705.
This report developed failurerate prediction procedures for magnetrons, vidicions, cathode
ray tubes, semiconductor lasers, helium-cadmium lasers, helium-neon lasers, Nd: YAG lasers,
electronic filters, solid state relays, time delay relays (electronic hybrid), circuit breakers, LC.
Sockets, thumbwheel switches, electromagnetic meters, fuses, crystals, incandescent lamps,
neon glow lamps and surface acoustic wave devices.
19.
"Impact of Nonoperating Periodson Equipment Reliability," RADC-TR-85-91, AD A l 58843.
This study developed failure rate models for nonoperating periods.
20.
"RADC Nonelectronic Reliability Notebook," RADC-TR-85-194, ADA l 63900.
This report contains failure rate data
on mechanical and electromechanical parts.
21
a
"Reliability Prediction for Spacecraft," RADC-TR-85-229, AD A149551.
This study.investigated the reliability performance histories
of 300 Satellite vehicles and the
is
basisfor the halvingof all model nEfactors for MIL-HDBK-217Eto MIL-HDKBPl7E, Notice 1.
22.
"Surface Mount Technology: A Reliability Review," 1986, Available from Reliability Analysis Center,
PO Box 4700, Rome, NY 13440-8200, 800-526-4802.
23.
"Thermal Resistances of Joint Army Navy (JAN) Certified Microcircuit Packages," RADC-TR-86-97,
AD B108417.
24.
"Large Scale Memory Error Detection and Correction," RADC-TR-87-92, AD
B117765L.
to calculate memory system reliability for memories
This study developed models
incorporating error detecting and correcting codes. For a summary
of the study see 1989
IEEE Reliability and Maintainability Symposium Proceedings, page 197, "AccountingSoft
for
Errors in Memory Reliability Prediction."
25.
"Reliability Analysisof a Surface Mounted Package Using Finite Element Simulation," RADC-TR-87177, AD A189488.
c-2
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MIL-HDBK-237F
CHG N O T I C E 2
m
9 9 9 9 9 7 0 0397093 920
MIL-HDBK-217F
NOTICE 2
APPENDIX C:
BIBLIOGRAPHY
26.
"VHSICImpact on System Reliability," RADC-TR-88-13,AD8122629.
27.
"Reliability Assessment of Surface Mount Technology," RADC-TR-88-72, AD A193759.
28."ReliabilityPredictionModels
A200529.
for Discrete SemiconductorDevices,"
RADC-TR-88-97, AD
This study developed new failure rate prediction models for GaAs Power FETS, Transient
Suppressor Diodes, Infrared LEDs, Diode Array Displays and Current Regulator Diodes.
29.
"Impact of FiberOptics
A201 946.
30.
"VHSICNHSIC Like Reliability PredictionModeling,"RADC-TR-89-171,ADA214601.
,
on System Reliability and Maintainability,"RADC-TR-88-124,
This study provides the basis
5.
31.
for the VHSIC model appearing
AD
in MIL-HDBK-217F, Section
"Reliability Assessment Using Finite Element Techniques," RADC-TR-89-281 , AD A216907.
This study addresses surface mounted solder interconnections and microwire board's platedthrough-hole (PTH) connections. The
report givesadetailedaccountofthefactors
to be
considered when performing an FEA and the procedure used
to transfer the results to a
reliability figure-of-merit.
"Reliability Analysis/Assessment of Advanced Technologies," RADC-TR-90-72, ADA 223647.
This study provides the basis for the revised microcircuit models (except VHSIC and Bubble
Memories) appearing in MIL-HDBK-217F, Section 5.
33.
"Improved Reliability PredictionModel for Field-AccessMagneticBubbleDevices,"AFWAL-TR81 -1052.
34.
"Reliability/Design ThermalApplications,"MIL-HDBK-251
35.
"NASAPartsApplicationHandbook,"MIL-HDBK-978-B(NASA).
This handbook is a five volume series which discusses afull range of electrical, electronic and
electromechanical component parts. It provides extensive detailed technical information
for
eachcomponent part such as: definitions, construction details, operating characteristics,
parts, environmental
derating,failuremechanisms,screeningtechniques,standard
considerations, and circuit application.
36.
"NonelectronicParts Reliability Data1991 ," NPRD-91.
Thisreportcontains
fieldfailureratedataon
a variety of electrical,mechanical,
electromechanicalandmicrowavepartsandassemblies(1400
different part types). It is
available fromtheReliability
AnalysisCenter,POBox4700,Rome,
NY 13440-8200,
Phone: (315) 337-0900.
37.
"Reliability Assessment of Critical ElectronicComponents,"RL-TR-92-197,AD-A256996.
This study is the basis for new or revised failure rate models in MIL-HDBK-217F, Notice 2,
for the followingdevice categories: resistors, capacitors, transformers,coils, motors,
relays, switches, circuit breakers,connectors,printed
circuitboardsandsurface
mount
technology.
page
Supersedes
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32.
vIL-HDBK-217F
CHG NOTICE 2
M 9 7 9 7 9 7 0 0397092 8b7 M
MIL-HDBK-217F
NOTICE 2
APPENDIX
38.
C:
BIBLIOGRAPHY
"Handbook of Reliability Prediction ProceduresforMechanicalEquipment,"NSWC-94/L07.
ThisHandbookincludes a methodology for nineteenbasicmechanicalcomponentsfor
evaluating a design for R&M that considers the material properties, operating environment
and critical failure modes. It is available from the Carderock Division, Naval Surface Warfare
Center, Bethesda,MD20084-5000,Phone(301)227-1694.
Custodians:
Army - CR
Navy - EC
Air Force - 17
Preparing Activity:
Air Force 17
-
ProjectNo.RELI-O074
Review Activities:
Army - MI, AV, ER
Navy - SH, AS, OS
Air Force - 11, 13, 15, 19, 99
User Activities:
Army AT, ME, GL
Navy - CG, MC, YD, TD
Air Force - 85
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-
c -4
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