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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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FDT3612
100V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
• 3.7 A, 100 V. RDS(ON) = 120 mΩ @ VGS = 10 V
RDS(ON) = 130 mΩ @ VGS = 6 V
• Fast switching speed
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
• Low gate charge (14nC typ)
• High performance trench technology for extremely
low RDS(ON)
• High power and current handling capability in a
widely used surface mount package
Applications
• DC/DC converter
• Motor driving
D
D
D
D
S
S
D
G
SOT-223
G
D
SOT-223 *
G
G
S
(J23Z)
Absolute Maximum Ratings
Symbol
S
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
100
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
3.7
A
PD
Maximum Power Dissipation
(Note 1a)
3.0
(Note 1b)
1.3
– Continuous
– Pulsed
20
(Note 1c)
TJ, TSTG
W
1.1
–55 to +150
°C
(Note 1a)
42
°C/W
(Note 1)
12
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
3612
FDT3612
13’’
12mm
2500 units
2012 Fairchild Semiconductor Corporation
FDT3612 Rev. C2 (W)
FDT3612
February 2012
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 50 V, ID= 3.7 A
90
mJ
3.7
A
Off Characteristics
VGS = 0 V, ID = 250 µA
100
V
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V,
VDS = 0 V
–100
nA
4
V
On Characteristics
VDS = 80 V,
106
VGS = 0 V
mV/°C
10
µA
(Note 2)
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 10 V,
ID = 3.7 A
ID = 3.5 A
VGS = 6 V,
VGS = 10 V, ID = 3.7A, TJ = 125°C
VGS = 10 V,
VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 3.7 A
2
2.5
–6
88
94
170
mV/°C
120
130
245
10
mΩ
A
11
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
VDS = 50 V,
f = 1.0 MHz
V GS = 0 V,
632
pF
40
pF
20
pF
(Note 2)
VDD = 50 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
8.5
17
ns
2
4
ns
ns
td(off)
Turn–Off Delay Time
23
37
tf
Turn–Off Fall Time
4.5
9
ns
Qg
Total Gate Charge
14
20
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 50 V,
VGS = 10 V
ID = 3.7 A,
2.4
nC
3.8
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 2.5 A
(Note 2)
0.75
2.5
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 42°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 95°C/W when
mounted on a .0066
2
in pad of 2 oz
copper
c) 110°C/W when mounted on a
minimum pad.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDT3612 Rev. C2 (W)
FDT3612
Electrical Characteristics
FDT3612
Typical Characteristics
1.8
5.0V
ID, DRAIN CURRENT (A)
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
20
4.5V
16
12
4.0V
8
4
3.5V
1.6
VGS = 4.0V
1.4
4.5V
5.0V
6.0V
1.2
0.8
0
0
2
4
6
0
8
4
8
12
16
20
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.4
2.2
ID = 3.7A
VGS = 10V
2
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10V
1
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
ID = 1.9 A
0.3
TA = 125oC
0.2
TA = 25oC
0.1
0
150
3
4
5
6
7
8
9
10
o
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 10V
16
12
8
TA = 125oC
25oC
4
-55oC
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
2
2.5
3
3.5
4
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDT3612 Rev. C2 (W)
FDT3612
Typical Characteristics
800
ID = 3.7A
CISS
8
60V
80V
6
f = 1MHz
VGS = 0 V
700
VDS = 40V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
4
600
500
400
300
200
CRSS
2
COSS
100
0
0
0
2
4
6
8
10
12
14
0
16
20
40
60
80
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
P(pk), PEAK TRANSIENT POWER (W)
40
ID, DRAIN CURRENT (A)
10
100 μs
1
1 ms
10 ms
100 ms
1s
10 s
DC
THIS AREA IS
LIMITED BY rDS(on)
0.1
SINGLE PULSE
TJ = MAX RATED
0.01
RθJA = 110 oC/W
30
20
10
0
0.001
TA = 25 oC
0.001
0.1
SINGLE PULSE
RθJA = 110°C/W
TA = 25°C
1
10
100
0.01
0.1
1
10
100
t1, TIME (sec)
500
VDS, DRAIN to SOURCE VOLTAGE (V)
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) + RθJA
RθJA = 110°C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDT3612 Rev. C2 (W)
6.70
6.20
0.10
B
C B
3.10
2.90
3.25
4
1.90
A
3.70
3.30
1
6.10
1.90
3
0.84
0.60
2.30
2.30
0.95
4.60
0.10
C B
LAND PATTERN RECOMMENDATION
SEE DETAIL A
1.80 MAX
C
0.08
C
0.10
0.00
10°
5°
GAGE
PLANE
R0.15±0.05
R0.15±0.05
10° TYP
0°
0.25
SEATING
PLANE
10°
5°
0.60 MIN
1.70
DETAIL A
SCALE: 2:1
0.35
0.20
7.30
6.70
NOTES: UNLESS OTHERWISE SPECIFIED
A) DRAWING BASED ON JEDEC REGISTRATION
TO-261C, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH. MOLD FLASH OR BURRS
DOES NOT EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M-2009.
E) LANDPATTERN NAME: SOT230P700X180-4BN
F) DRAWING FILENAME: MKT-MA04AREV3
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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