Grou
p
1
IA
1
1
H
Hydro
gen
3
4
2
The services we provide include dopant and impurity depth profiling, thin film and
coating analysis, bulk composition and impurity analysis, materials characterization,
failure analysis, characterization of particles, defects and residues, crystal structure
determination, roughness measurement and the investigation of thermal properties.
Lithiu
Na M
g
Sodiu
m
19
Magn
esium
20
4
3
IIIB
13
IIIA
4
IVB
18
VIIIA
14
IVA
2
5
15
5
K C 21 22
6
VB
VA
16
6
a Sc
7
23
VIB
VIA
H
17
7
B
e
8
V
2
V
37
4
I
I
I
8
I
B
A
Ti V
C
9
25
38
9
N
5
10
1
2
V
3
3
1
6
III
0
Cr M
Rb S 9 40
O
14
27
11
F
n Fe
r Y
1
28
5
41
IB
12
N
A
e
l
1
2
IIB
6
42
55
9
C
S
Z
o
i
r
17
30
43
56
N
N
P
6
b Mo
i Cu
18
31
44
S
Cs B
32
45
72
C
Z
T
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c
l
a
33
46
73
A
G
R
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3
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7
4
87
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4
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35
48
75
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A
P
s
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a
36
49
76
S
A
W
Fr R
e
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50
77
104
B
R
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a
5
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1
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K
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5
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1
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S
6
Rf D
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Ir P
53
80
107
b Sg
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54
81
108
T
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82
Hg
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P
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The other divisions of EAG provide additional services, allowing us to meet a larger
range of customer needs across many industries.
Potas
sium
Chemir: Providing in-depth analytical investigations and litigation support for a wide
variety of industries, including paints, coatings, plastics and consumer products.
Calci
um
Release to Production: Providing electronic testing services to the electronics
and communications industries.
agrosciences: Providing analytical chemistry, environmental fate and metabolism
services for agrochemicals.
Rubid
ium
Life Sciences: Providing regulated analytical and research/development services to
the pharmaceutical and medical device industries.
Cesiu
m
7
lium
12
3
Our analytical staff is highly qualified, knowledgeable and very experienced. Over half
of our scientists have advanced degrees in a variety of disciplines, from universities
across the globe. The diversity of disciplines (e.g. chemistry, physics, materials science
and engineering) enables us to skillfully address materials issues from a wide variety
of industries.
Beryl
Stron
tium
Scan
dium
Yttriu
m
m
nium
Vana
d
ium
Niobi
um
Tanta
lu
m
Tung
st
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Radiu
m
Ruthe
rfordi
um
Dubn
ium
ium M
anga
nese
denu
m
Seab
orgiu
m
Heliu
m
Carbo
n
Nitrog
en
Chrom
Molyb
Bariu
um
ium
Titan
iu
Zirco
Hafni
Franc
Boron
m Te
Coba
lt
ium R
uthen
ium
Rhod
ium
ium
um
inum
Nicke
l
Copp
er
chnet
Rhen
Bohri
Iron
Alum
Osmi
Hass
um
ium
Meitn
Iridium
erium
Palla
dium
Platin
Unun
um
nilium
Silver
Unun
Gold
unium
Zinc
Galliu
m
Cadm
ium
Merc
ury
Indium
Thalli
um
Lead
bium
Unun
q
quad
n
anium
Tin
Unun
Silico
Germ
ium
Phos
phoru
Arsen
ic
Antim
ony
Bism
uth
s
Oxyg
en
Sulfu
r
Selen
ium
Tellur
iu
m
Polon
ium
Uuh
Unun
hexiu
Typical Analysis Depths for Techniques
Evans Analytical
Group
m
11
We characterize materials directly for you; we don’t make or sell instruments! Our
scientists use our instruments to the limits of their performance to directly help you
solve your problems.
Our People
Li B
e
plasma
Our Services
2
IIA
m
ine
ine
Chlor
ine
Brom
Iodine
Astat
Fluor
ine
on
n
Rado
n
Argon
Krypt
Xeno
Neon
N
Who We Are
18
r
A
Cl
S
P
eon
n
Argo
rine
o
l
h
C
36
r
K
34
r
B
33
e
S
54
s
A
53
e
e
G
X
2
5
I
51
e
T
0
86
b
S
85
n
n
S
R
4
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t
A
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o
P
82
i
B
b
P
116
l
T
h
us
phor
m
m
leniu
ic
rsen
A
Lead
ne
romi
What We Do
B
rium
u
l
l
e
T
Antim
Tin
ton
Kryp
Se
ony
allium
m
35
Phos
iu
man
b
r
Sulfu
muth
Bis
114
q
u
U
dium
enon
X
e
Iodin
ne
ti
Asta
m
loniu
Po
Uu
Unu
n
um
hexi
on
Rad
The Materials Characterization division of Evans Analytical Group (EAG) is the
world’s largest independent provider of materials characterization and surface
analysis services. EAG is the leading global source of microanalytical and surface
characterization services to multiple industries and for many applications, ranging
from semiconductors to medical devices; from solid state lighting to photovoltaic
materials; and from starting/raw materials to finished products. Founded in 1978 in
California as Charles Evans & Associates, EAG has grown into a global network of
laboratories and sales offices, offering services worldwide.
With over 34 years of experience, we provide our customers with information that
is essential to the development of new materials and processes. Our customers rely
on our data and services to improve product performance; solve materials-related
problems and to integrate novel materials into their new products and manufacturing
processes.
EAG is committed to excellence in our professional practices, offering world-class
analytical services with fast turnaround and exceptional quality. We are also
committed to continual improvement through our quality management systems. Our
ISO 9001 and 17025 certifications provide a strong foundation, enabling us to duplicate
procedures and provide excellent consistency among the various EAG sites around the
world. Our labs are an extension of your own facilities and we provide you direct access
to our analytical staff.
The primary analytical techniques used within EAG involve the use of ions, electrons,
or photons (e.g. X-rays or infrared light) to probe materials, in order to investigate
their composition, structure and chemistry. These analyses can: determine the
chemical composition; detect the presence (or absence) of contaminants or dopants;
and can investigate the physical structure or appearance of samples of interest. This
detailed information is highly useful to our customers as they develop materials for
their products, or optimize a new manufacturing process.
EBSD
Electron Backscatter Diffraction
FIB/SEM Imaging
Dual Beam and Single Beam
FTIR
Fourier Transform Infrared Spectroscopy
GC-MS
Gas Chromatography-Mass Spectrometry
0.1 – 1at%
submonolayer
Junction location, electrically active crystal
defects, depletion layer widths, minority carrier
diffusion length
n/aYes
Yes
≥10nm (Field Emission)
In-situ cross section preparation and imaging
n/a
n/a
Yes
1nm
Identification of polymers and organics;
contamination identification, particles
Molecular functional
groups
0.1 – 1wt%
No
≥15µm
Identification and quantification of volatile
organic compounds in mixtures, outgassing,
residual solvents, liquid or gas injection
Molecular ions
up to m/z ~500
400ng (full scan)
10ng (outgassing)
n/a
n/a
LA-ICPMS and ICPMS
Laser Ablation Inductively Coupled
Bulk composition, trace and ultra-trace
Li - U
elemental analysis, impurity distribution
Plasma Mass Spectrometry
mapping
LEXES
Low Energy X-ray Emission Spectrometry
Dosimetry/mapping of ion implants,
B-U
thin film characterization
10ppt wt - 100%
10ppb wt - 100%
No
n/a
n/a
Yes
5x1013 at/cm2
Yes
30µm
Non-contact 3-dimensional imaging of
surface topography
n/a
n/a
Yes
435nm
Identification of organics and inorganics;
particle identification, stress measurement,
carbon phase identification
Chemical and molecular
information
≥1wt%
Yes
≥1µm
1nm imaging
0.5µm EDS
Imaging, Z-contrast, elemental mapping
elemental identification, EELS line scans,
lattice imaging, Bright Field and
Dark Field imaging
B-U
1%
Yes
0.25nm
Imaging, elemental identification,
crystallographic information, lattice imaging
B-U
0.5%
Yes
0.19nm
Thermal stability and composition of organic/
n/a
inorganic composite materials; glass transition,
crystallization, melting, clustering, curing,
chemisorption, and etc.
0.01 – 200°C/min; 20 - 1100°C;
±0.1mg – ±200mg;
±2.5µV – ±2500µV
n/a
n/a
TOF-SIMS
Time-Of-Flight Secondary Ion Mass
Spectrometry
Surface microanalysis of organic and
inorganic materials, chemical mapping
H-U
Molecular species
107 – 1010 at/cm2
submonolayer
Yes
≥0.20µm
TXRF
Total Reflection X-ray Fluorescence
Spectroscopy
Metallic surface contamination on
semiconductor wafers, non-destructive
S-U
109 – 1012 at/cm2
Yes
~10mm
XPS/ESCA
X-ray Photoelectron Spectroscopy/
Electron Spectroscopy for Chemical Analysis
Surface analysis of organic and
inorganic materials, depth profiling
Li - U
Chemical bonding
0.01 – 1at%
submonolayer
Yes
10µm – 2mm
XRD
X-ray Diffraction
Identification of crystal phases, crystal
H-U
orientation and crystal quality, % crystallinity
1at%
No
50µm
XRR
X-ray Reflectivity
Determination of film density, roughness
n/a
and thickness
n/a
Yes
5mm
10ppm
Yes
75µm
Composition and impurities in thick films
and bulk materials, wafer mapping
SEM/
EDS
Raman
XRD
XPS/
ESCA
Be - U
10 at%
1 at%
XRF
RBS
LEXES
100 ppm
TOF-SIMS
1E18
1E17
1E16
10 ppm
LA-ICPMS
TXRF
1 ppm
100 ppb
10 ppb
1E15
Chemical bonding/
molecular information
Elemental information
1E14
Imaging information
1 ppb
1E13
Thickness and Density information only
(no composition information)
Physical Properties
100 ppt
n/a
≥20µm (Depth profiling)
1 - 5µm (Imaging mode)
XRF
X-ray Fluorescence
Auger
0.1 at%
1E19
n/a
Dopant and impurity depth profiling,
H-U
1012 – 1016 at/cm3
Yes
surface, bulk and microanalysis,
insulating films, ultra low energy/ultra
shallow depth profiling
TGA/DTA/DSC
Thermogravimetric Analysis
Differential Thermal Analysis
Differential Scanning Calorimetry
STEM/
EDS
1E20
5 - 15mm
5µm
100 at%
XRR
1E21
1E12
Dynamic SIMS
The EAGLABSSM Bubble Chart
©2013 Evans Analytical Group
0.1 nm
SEM (with EDS)
Scanning Electron Microscopy
Imaging, elemental identification
B-U
0.1 %
Yes
Energy Dispersive X-ray Spectroscopy
TEM (with EDS and EELS)
Transmission Electron Microscopy
Energy Dispersive X-ray Spectroscopy
Electron Energy Loss Spectroscopy
STEM/
EELS
1E22
50nm to 1µm
1nm imaging; ~80nm
minimum grain size
0.1ppm - 50%
STEM (with EDS and EELS)
Scanning Transmission Electron Microscopy
Energy Dispersive X-ray Spectroscopy
Electron Energy Loss Spectroscopy
OP
RTX
SEM
1.5 – 5nm
Grain size, grain orientation, grain
n/a
n/aYes
misalignment, % crystallinity IGA
Bulk analysis of H, C, N, O and S,
H, C, N, O, S
Instrumental Gas Analysis
(Combustion and fusion gas analysis)
fractional gas analysis
SIMS
Secondary Ion Mass Spectrometry
EBIC
FTIR
1ppm wt - 100%
ua
nunq
U
Surface, particle, defect analysis, and large
Li - U
and small area depth profiling
n/a
Imaging Techniques
AFM
FIB
n/aYes
ICP-OES
Inductively Coupled Plasma
Bulk composition analysis
Li - U
Optical Emission Spectroscopy
Raman
Raman Spectroscopy
TEM/STEM
5E22
GDMS
Bulk analysis: trace and ultra-trace elemental
Li - U
Glow Discharge Mass Spectrometry
survey analysis, depth profiling
OP
Optical Profilometry
≥1mm
TGA/DTA/DSC
16
EBIC
Electron Beam Induced Current
n/a
No
Analytical Resolution versus Detection Limit
1 nm
10 nm
100 nm
1 μm
IGA
Auger
Auger Electron Spectroscopy
Roughness, 3-dimensional imaging of surfaces,
magnetic field, grain size
RBS 0.001 – 10at%
(Z dependent)
NRA > 1 x 1015 at/cm2
HFS 0.1at%
Lateral Resolution/
Probe size
ICP techniques
10
Thin film composition/thickness, quantitative
B - U (RBS)
dose measurement, quantitation without
B, N, O, C (NRA)
1
standards, hydrogen in thin films, defects
H, 2H (HFS)
and lattice locations
Imaging/
Mapping
GC-MS
5
AFM
Atomic Force Microscopy
H
17
Detection Limits
10 μm
Analytical Spot Size
100 μm
1 mm
10 ppt
1 cm
Bulk
Techniques
GDMS
Ox
n
roge
elium
rine
o
u
l
F
ygen
Elements Detected
th
ep
D
g
in
th
pl
ep
m
th
D
g
Sa
ep
in
D
pl
nm
g
.3
m
in
pl
Sa
r0
m
fo
nm
Sa
it
3
m
lim
or
f
0n
al
it
ic
r3
lim
ys
fo
al
it
Ph
c
i
lim
ys
al
Ph
ic
ys
Ph
N
Accelerator Techniques
Rutherford Backscattering Spectrometry
Nuclear Reaction Analysis
Hydrogen Forward Scattering Spectrometry
Channeling
e
N
F
O
Typical Applications
He
17
VIIA
9
16
VIA
8
Analytical Technique
Detection Range
Atoms/cm3
18
A
VIII
2
Grou
p
1
IA
1
H
1
Hydro
gen
3
The services we provide include dopant and impurity depth profiling, thin film and
coating analysis, bulk composition and impurity analysis, materials characterization,
failure analysis, characterization of particles, defects and residues, crystal structure
determination, roughness measurement and the investigation of thermal properties.
Lithiu
3
19
Na M
g
m
Magn
esium
20
3
IIIB
13
IIIA
4
IVB
18
VIIIA
14
IVA
2
5
15
5
K C 21 22
6
VB
VA
16
6
a Sc
7
23
VIB
VIA
H
17
7
B
e
8
V
2
V
37
4
I
I
I
8
I
B
A
Ti V
C
9
25
38
9
N
5
10
1
2
V
3
3
1
6
III
0
Cr M
Rb S 9 40
O
14
27
11
F
n Fe
r Y
1
28
5
41
IB
12
N
A
e
l
1
2
IIB
6
42
55
9
C
S
Z
o
i
r
17
30
43
56
N
N
P
6
b Mo
i Cu
18
31
44
S
Cs B
32
45
72
C
Z
T
n
c
l
a
33
46
73
A
G
R
r
a
u
3
47
7
4
87
G
4
R
Hf T
e
h
35
48
75
88
A
P
s
d
a
36
49
76
S
A
W
Fr R
e
g Cd
50
77
104
B
R
r
e
a
5
7
105
1
8
K
O
I
r
n
s
5
7
1
2
9
0
S
6
Rf D
n Sb
Ir P
53
80
107
b Sg
t Au
54
81
108
T
e
82
Hg
Bh H 109 110
I
83
X
T
e
s M
l
8
111
4
P
b B
t Uu
85
112
i Po
86
nUu
114
uUu
At R
b
n
116
Uu
Potas
sium
Chemir: Providing in-depth analytical investigations and litigation support for a wide
variety of industries, including paints, coatings, plastics and consumer products.
Calci
um
Release to Production: Providing electronic testing services to the electronics
and communications industries.
agrosciences: Providing analytical chemistry, environmental fate and metabolism
services for agrochemicals.
Rubid
ium
Life Sciences: Providing regulated analytical and research/development services to
the pharmaceutical and medical device industries.
Cesiu
m
Stron
tium
Scan
dium
Yttriu
m
m
nium
Vana
d
ium
Niobi
um
Tanta
lu
m
Tung
st
en
Radiu
m
Ruthe
rfordi
um
Dubn
ium
ium M
anga
nese
denu
m
Seab
orgiu
m
Heliu
m
Carbo
n
Nitrog
en
Chrom
Molyb
Bariu
um
ium
Titan
iu
Zirco
Hafni
Franc
Boron
m Te
Coba
lt
ium R
uthen
ium
Rhod
ium
ium
um
inum
Nicke
l
Copp
er
chnet
Rhen
Bohri
Iron
Alum
Osmi
Hass
um
ium
Meitn
Iridium
erium
Palla
dium
Platin
Unun
um
nilium
Silver
Unun
Gold
unium
Zinc
Galliu
m
Cadm
ium
Merc
ury
Indium
Thalli
um
Lead
bium
Unun
quad
n
anium
Tin
Unun
Silico
Germ
q
ium
Phos
phoru
Arsen
ic
Antim
ony
Bism
uth
s
Oxyg
en
Sulfu
r
Selen
ium
Tellur
iu
m
Polon
ium
Uuh
Unun
hexiu
Typical Analysis Depths for Techniques
4
The other divisions of EAG provide additional services, allowing us to meet a larger
range of customer needs across many industries.
7
lium
12
Sodiu
Our analytical staff is highly qualified, knowledgeable and very experienced. Over half
of our scientists have advanced degrees in a variety of disciplines, from universities
across the globe. The diversity of disciplines (e.g. chemistry, physics, materials science
and engineering) enables us to skillfully address materials issues from a wide variety
of industries.
Beryl
plasma
Evans Analytical
Group
m
11
We characterize materials directly for you; we don’t make or sell instruments! Our
scientists use our instruments to the limits of their performance to directly help you
solve your problems.
Our People
4
Li B
e
2
Our Services
2
IIA
m
ine
ine
Chlor
ine
Brom
Iodine
Astat
Fluor
ine
on
n
Rado
n
Argon
Krypt
Xeno
Neon
N
Who We Are
18
r
A
Cl
S
P
eon
n
Argo
rine
o
l
h
C
36
r
K
34
r
B
33
e
S
54
s
A
53
e
e
G
X
2
5
I
51
e
T
0
86
b
S
85
n
n
S
R
4
8
t
A
83
o
P
82
i
B
b
P
116
l
T
h
us
phor
m
m
leniu
ic
rsen
A
Lead
ne
romi
What We Do
B
rium
u
l
l
e
T
Antim
Tin
ton
Kryp
Se
ony
allium
m
35
Phos
iu
man
b
r
Sulfu
muth
Bis
114
q
u
U
dium
enon
X
e
Iodin
ne
ti
Asta
m
loniu
Po
Uu
Unu
n
um
hexi
on
Rad
The Materials Characterization division of Evans Analytical Group (EAG) is the
world’s largest independent provider of materials characterization and surface
analysis services. EAG is the leading global source of microanalytical and surface
characterization services to multiple industries and for many applications, ranging
from semiconductors to medical devices; from solid state lighting to photovoltaic
materials; and from starting/raw materials to finished products. Founded in 1978 in
California as Charles Evans & Associates, EAG has grown into a global network of
laboratories and sales offices, offering services worldwide.
With over 34 years of experience, we provide our customers with information that
is essential to the development of new materials and processes. Our customers rely
on our data and services to improve product performance; solve materials-related
problems and to integrate novel materials into their new products and manufacturing
processes.
EAG is committed to excellence in our professional practices, offering world-class
analytical services with fast turnaround and exceptional quality. We are also
committed to continual improvement through our quality management systems. Our
ISO 9001 and 17025 certifications provide a strong foundation, enabling us to duplicate
procedures and provide excellent consistency among the various EAG sites around the
world. Our labs are an extension of your own facilities and we provide you direct access
to our analytical staff.
The primary analytical techniques used within EAG involve the use of ions, electrons,
or photons (e.g. X-rays or infrared light) to probe materials, in order to investigate
their composition, structure and chemistry. These analyses can: determine the
chemical composition; detect the presence (or absence) of contaminants or dopants;
and can investigate the physical structure or appearance of samples of interest. This
detailed information is highly useful to our customers as they develop materials for
their products, or optimize a new manufacturing process.
EBSD
Electron Backscatter Diffraction
FIB/SEM Imaging
Dual Beam and Single Beam
FTIR
Fourier Transform Infrared Spectroscopy
GC-MS
Gas Chromatography-Mass Spectrometry
0.1 – 1at%
submonolayer
Junction location, electrically active crystal
defects, depletion layer widths, minority carrier
diffusion length
n/aYes
Yes
≥10nm (Field Emission)
In-situ cross section preparation and imaging
n/a
n/a
Yes
1nm
Identification of polymers and organics;
contamination identification, particles
Molecular functional
groups
0.1 – 1wt%
No
≥15µm
Identification and quantification of volatile
organic compounds in mixtures, outgassing,
residual solvents, liquid or gas injection
Molecular ions
up to m/z ~500
400ng (full scan)
10ng (outgassing)
n/a
n/a
LA-ICPMS and ICPMS
Laser Ablation Inductively Coupled
Bulk composition, trace and ultra-trace
Li - U
elemental analysis, impurity distribution
Plasma Mass Spectrometry
mapping
LEXES
Low Energy X-ray Emission Spectrometry
Dosimetry/mapping of ion implants,
B-U
thin film characterization
10ppt wt - 100%
10ppb wt - 100%
No
n/a
n/a
Yes
5x1013 at/cm2
Yes
30µm
Non-contact 3-dimensional imaging of
surface topography
n/a
n/a
Yes
435nm
Identification of organics and inorganics;
particle identification, stress measurement,
carbon phase identification
Chemical and molecular
information
≥1wt%
Yes
≥1µm
1nm imaging
0.5µm EDS
Imaging, Z-contrast, elemental mapping
elemental identification, EELS line scans,
lattice imaging, Bright Field and
Dark Field imaging
B-U
1%
Yes
0.25nm
Imaging, elemental identification,
crystallographic information, lattice imaging
B-U
0.5%
Yes
0.19nm
Thermal stability and composition of organic/
n/a
inorganic composite materials; glass transition,
crystallization, melting, clustering, curing,
chemisorption, and etc.
0.01 – 200°C/min; 20 - 1100°C;
±0.1mg – ±200mg;
±2.5µV – ±2500µV
n/a
n/a
TOF-SIMS
Time-Of-Flight Secondary Ion Mass
Spectrometry
Surface microanalysis of organic and
inorganic materials, chemical mapping
H-U
Molecular species
107 – 1010 at/cm2
submonolayer
Yes
≥0.20µm
TXRF
Total Reflection X-ray Fluorescence
Spectroscopy
Metallic surface contamination on
semiconductor wafers, non-destructive
S-U
109 – 1012 at/cm2
Yes
~10mm
XPS/ESCA
X-ray Photoelectron Spectroscopy/
Electron Spectroscopy for Chemical Analysis
Surface analysis of organic and
inorganic materials, depth profiling
Li - U
Chemical bonding
0.01 – 1at%
submonolayer
Yes
10µm – 2mm
XRD
X-ray Diffraction
Identification of crystal phases, crystal
H-U
orientation and crystal quality, % crystallinity
1at%
No
50µm
XRR
X-ray Reflectivity
Determination of film density, roughness
n/a
and thickness
n/a
Yes
5mm
10ppm
Yes
75µm
Composition and impurities in thick films
and bulk materials, wafer mapping
SEM/
EDS
Raman
XRD
XPS/
ESCA
Be - U
10 at%
1 at%
XRF
RBS
LEXES
100 ppm
TOF-SIMS
1E18
1E17
1E16
10 ppm
LA-ICPMS
TXRF
1 ppm
100 ppb
10 ppb
1E15
Chemical bonding/
molecular information
Elemental information
1E14
Imaging information
1 ppb
1E13
Thickness and Density information only
(no composition information)
Physical Properties
100 ppt
n/a
≥20µm (Depth profiling)
1 - 5µm (Imaging mode)
XRF
X-ray Fluorescence
Auger
0.1 at%
1E19
n/a
Dopant and impurity depth profiling,
H-U
1012 – 1016 at/cm3
Yes
surface, bulk and microanalysis,
insulating films, ultra low energy/ultra
shallow depth profiling
TGA/DTA/DSC
Thermogravimetric Analysis
Differential Thermal Analysis
Differential Scanning Calorimetry
STEM/
EDS
1E20
5 - 15mm
5µm
100 at%
XRR
1E21
1E12
Dynamic SIMS
The EAGLABSSM Bubble Chart
©2013 Evans Analytical Group
0.1 nm
SEM (with EDS)
Scanning Electron Microscopy
Imaging, elemental identification
B-U
0.1 %
Yes
Energy Dispersive X-ray Spectroscopy
TEM (with EDS and EELS)
Transmission Electron Microscopy
Energy Dispersive X-ray Spectroscopy
Electron Energy Loss Spectroscopy
STEM/
EELS
1E22
50nm to 1µm
1nm imaging; ~80nm
minimum grain size
0.1ppm - 50%
STEM (with EDS and EELS)
Scanning Transmission Electron Microscopy
Energy Dispersive X-ray Spectroscopy
Electron Energy Loss Spectroscopy
OP
RTX
SEM
1.5 – 5nm
Grain size, grain orientation, grain
n/a
n/aYes
misalignment, % crystallinity IGA
Bulk analysis of H, C, N, O and S,
H, C, N, O, S
Instrumental Gas Analysis
(Combustion and fusion gas analysis)
fractional gas analysis
SIMS
Secondary Ion Mass Spectrometry
EBIC
FTIR
1ppm wt - 100%
ua
nunq
U
Surface, particle, defect analysis, and large
Li - U
and small area depth profiling
n/a
Imaging Techniques
AFM
FIB
n/aYes
ICP-OES
Inductively Coupled Plasma
Bulk composition analysis
Li - U
Optical Emission Spectroscopy
Raman
Raman Spectroscopy
TEM/STEM
5E22
GDMS
Bulk analysis: trace and ultra-trace elemental
Li - U
Glow Discharge Mass Spectrometry
survey analysis, depth profiling
OP
Optical Profilometry
≥1mm
TGA/DTA/DSC
16
EBIC
Electron Beam Induced Current
n/a
No
Analytical Resolution versus Detection Limit
1 nm
10 nm
100 nm
1 μm
IGA
Auger
Auger Electron Spectroscopy
Roughness, 3-dimensional imaging of surfaces,
magnetic field, grain size
RBS 0.001 – 10at%
(Z dependent)
NRA > 1 x 1015 at/cm2
HFS 0.1at%
Lateral Resolution/
Probe size
ICP techniques
10
Thin film composition/thickness, quantitative
B - U (RBS)
dose measurement, quantitation without
B, N, O, C (NRA)
1
standards, hydrogen in thin films, defects
H, 2H (HFS)
and lattice locations
Imaging/
Mapping
GC-MS
5
AFM
Atomic Force Microscopy
H
17
Detection Limits
10 μm
Analytical Spot Size
100 μm
1 mm
10 ppt
1 cm
Bulk
Techniques
GDMS
Ox
n
roge
elium
rine
o
u
l
F
ygen
Elements Detected
th
ep
D
g
in
th
pl
ep
m
th
D
g
Sa
ep
in
D
pl
nm
g
.3
m
in
pl
Sa
r0
m
fo
nm
Sa
it
3
m
lim
or
f
0n
al
it
ic
r3
lim
ys
fo
al
it
Ph
c
i
lim
ys
al
Ph
ic
ys
Ph
N
Accelerator Techniques
Rutherford Backscattering Spectrometry
Nuclear Reaction Analysis
Hydrogen Forward Scattering Spectrometry
Channeling
e
N
F
O
Typical Applications
He
17
VIIA
9
16
VIA
8
Analytical Technique
Detection Range
Atoms/cm3
18
A
VIII
2
Our Services
The services we provide include dopant and impurity depth profiling, thin film and
coating analysis, bulk composition and impurity analysis, materials characterization,
failure analysis, characterization of particles, defects and residues, crystal structure
determination, roughness measurement and the investigation of thermal properties.
We characterize materials directly for you; we don’t make or sell instruments! Our
scientists use our instruments to the limits of their performance to directly help you
solve your problems.
The other divisions of EAG provide additional services, allowing us to meet a larger
range of customer needs across many industries.
Evans Analytical
Group
Our analytical staff is highly qualified, knowledgeable and very experienced. Over half
of our scientists have advanced degrees in a variety of disciplines, from universities
across the globe. The diversity of disciplines (e.g. chemistry, physics, materials science
and engineering) enables us to skillfully address materials issues from a wide variety
of industries.
Our People
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Magn
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sium
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Chemir: Providing in-depth analytical investigations and litigation support for a wide
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variety of industries, including paints, coatings, plastics and consumer products.
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Release to Production: Providing electronic testing services to the electronics
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and communications industries.
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agrosciences: Providing analytical chemistry, environmental fate and metabolism
N
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services for agrochemicals.
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the pharmaceutical and medical device industries.
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Who We Are
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What We Do
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The Materials Characterization division of Evans Analytical Group (EAG) is the
world’s largest independent provider of materials characterization and surface
analysis services. EAG is the leading global source of microanalytical and surface
characterization services to multiple industries and for many applications, ranging
from semiconductors to medical devices; from solid state lighting to photovoltaic
materials; and from starting/raw materials to finished products. Founded in 1978 in
California as Charles Evans & Associates, EAG has grown into a global network of
laboratories and sales offices, offering services worldwide.
With over 34 years of experience, we provide our customers with information that
is essential to the development of new materials and processes. Our customers rely
on our data and services to improve product performance; solve materials-related
problems and to integrate novel materials into their new products and manufacturing
processes.
EAG is committed to excellence in our professional practices, offering world-class
analytical services with fast turnaround and exceptional quality. We are also
committed to continual improvement through our quality management systems. Our
ISO 9001 and 17025 certifications provide a strong foundation, enabling us to duplicate
procedures and provide excellent consistency among the various EAG sites around the
world. Our labs are an extension of your own facilities and we provide you direct access
to our analytical staff.
The primary analytical techniques used within EAG involve the use of ions, electrons,
or photons (e.g. X-rays or infrared light) to probe materials, in order to investigate
their composition, structure and chemistry. These analyses can: determine the
chemical composition; detect the presence (or absence) of contaminants or dopants;
and can investigate the physical structure or appearance of samples of interest. This
detailed information is highly useful to our customers as they develop materials for
their products, or optimize a new manufacturing process.
EBSD
Electron Backscatter Diffraction
FIB/SEM Imaging
Dual Beam and Single Beam
FTIR
Fourier Transform Infrared Spectroscopy
GC-MS
Gas Chromatography-Mass Spectrometry
0.1 – 1at%
submonolayer
Junction location, electrically active crystal
defects, depletion layer widths, minority carrier
diffusion length
n/aYes
Yes
≥10nm (Field Emission)
In-situ cross section preparation and imaging
n/a
n/a
Yes
1nm
Identification of polymers and organics;
contamination identification, particles
Molecular functional
groups
0.1 – 1wt%
No
≥15µm
Identification and quantification of volatile
organic compounds in mixtures, outgassing,
residual solvents, liquid or gas injection
Molecular ions
up to m/z ~500
400ng (full scan)
10ng (outgassing)
n/a
n/a
LA-ICPMS and ICPMS
Laser Ablation Inductively Coupled
Bulk composition, trace and ultra-trace
Li - U
elemental analysis, impurity distribution
Plasma Mass Spectrometry
mapping
LEXES
Low Energy X-ray Emission Spectrometry
Dosimetry/mapping of ion implants,
B-U
thin film characterization
10ppt wt - 100%
10ppb wt - 100%
No
n/a
n/a
Yes
5x1013 at/cm2
Yes
30µm
Non-contact 3-dimensional imaging of
surface topography
n/a
n/a
Yes
435nm
Identification of organics and inorganics;
particle identification, stress measurement,
carbon phase identification
Chemical and molecular
information
≥1wt%
Yes
≥1µm
1nm imaging
0.5µm EDS
Imaging, Z-contrast, elemental mapping
elemental identification, EELS line scans,
lattice imaging, Bright Field and
Dark Field imaging
B-U
1%
Yes
0.25nm
Imaging, elemental identification,
crystallographic information, lattice imaging
B-U
0.5%
Yes
0.19nm
Thermal stability and composition of organic/
n/a
inorganic composite materials; glass transition,
crystallization, melting, clustering, curing,
chemisorption, and etc.
0.01 – 200°C/min; 20 - 1100°C;
±0.1mg – ±200mg;
±2.5µV – ±2500µV
n/a
n/a
TOF-SIMS
Time-Of-Flight Secondary Ion Mass
Spectrometry
Surface microanalysis of organic and
inorganic materials, chemical mapping
H-U
Molecular species
107 – 1010 at/cm2
submonolayer
Yes
≥0.20µm
TXRF
Total Reflection X-ray Fluorescence
Spectroscopy
Metallic surface contamination on
semiconductor wafers, non-destructive
S-U
109 – 1012 at/cm2
Yes
~10mm
XPS/ESCA
X-ray Photoelectron Spectroscopy/
Electron Spectroscopy for Chemical Analysis
Surface analysis of organic and
inorganic materials, depth profiling
Li - U
Chemical bonding
0.01 – 1at%
submonolayer
Yes
10µm – 2mm
XRD
X-ray Diffraction
Identification of crystal phases, crystal
H-U
orientation and crystal quality, % crystallinity
1at%
No
50µm
XRR
X-ray Reflectivity
Determination of film density, roughness
n/a
and thickness
n/a
Yes
5mm
10ppm
Yes
75µm
Composition and impurities in thick films
and bulk materials, wafer mapping
SEM/
EDS
Raman
XRD
XPS/
ESCA
Be - U
10 at%
1 at%
XRF
RBS
LEXES
100 ppm
TOF-SIMS
1E18
1E17
1E16
10 ppm
LA-ICPMS
TXRF
1 ppm
100 ppb
10 ppb
1E15
Chemical bonding/
molecular information
Elemental information
1E14
Imaging information
1 ppb
1E13
Thickness and Density information only
(no composition information)
Physical Properties
100 ppt
n/a
≥20µm (Depth profiling)
1 - 5µm (Imaging mode)
XRF
X-ray Fluorescence
Auger
0.1 at%
1E19
n/a
Dopant and impurity depth profiling,
H-U
1012 – 1016 at/cm3
Yes
surface, bulk and microanalysis,
insulating films, ultra low energy/ultra
shallow depth profiling
TGA/DTA/DSC
Thermogravimetric Analysis
Differential Thermal Analysis
Differential Scanning Calorimetry
STEM/
EDS
1E20
5 - 15mm
5µm
100 at%
XRR
1E21
1E12
Dynamic SIMS
The EAGLABSSM Bubble Chart
©2013 Evans Analytical Group
0.1 nm
SEM (with EDS)
Scanning Electron Microscopy
Imaging, elemental identification
B-U
0.1 %
Yes
Energy Dispersive X-ray Spectroscopy
TEM (with EDS and EELS)
Transmission Electron Microscopy
Energy Dispersive X-ray Spectroscopy
Electron Energy Loss Spectroscopy
STEM/
EELS
1E22
50nm to 1µm
1nm imaging; ~80nm
minimum grain size
0.1ppm - 50%
STEM (with EDS and EELS)
Scanning Transmission Electron Microscopy
Energy Dispersive X-ray Spectroscopy
Electron Energy Loss Spectroscopy
OP
RTX
SEM
1.5 – 5nm
Grain size, grain orientation, grain
n/a
n/aYes
misalignment, % crystallinity IGA
Bulk analysis of H, C, N, O and S,
H, C, N, O, S
Instrumental Gas Analysis
(Combustion and fusion gas analysis)
fractional gas analysis
SIMS
Secondary Ion Mass Spectrometry
EBIC
FTIR
1ppm wt - 100%
ua
nunq
U
Surface, particle, defect analysis, and large
Li - U
and small area depth profiling
n/a
Imaging Techniques
AFM
FIB
n/aYes
ICP-OES
Inductively Coupled Plasma
Bulk composition analysis
Li - U
Optical Emission Spectroscopy
Raman
Raman Spectroscopy
TEM/STEM
5E22
GDMS
Bulk analysis: trace and ultra-trace elemental
Li - U
Glow Discharge Mass Spectrometry
survey analysis, depth profiling
OP
Optical Profilometry
≥1mm
TGA/DTA/DSC
16
EBIC
Electron Beam Induced Current
n/a
No
Analytical Resolution versus Detection Limit
1 nm
10 nm
100 nm
1 μm
IGA
Auger
Auger Electron Spectroscopy
Roughness, 3-dimensional imaging of surfaces,
magnetic field, grain size
RBS 0.001 – 10at%
(Z dependent)
NRA > 1 x 1015 at/cm2
HFS 0.1at%
Lateral Resolution/
Probe size
ICP techniques
10
Thin film composition/thickness, quantitative
B - U (RBS)
dose measurement, quantitation without
B, N, O, C (NRA)
1
standards, hydrogen in thin films, defects
H, 2H (HFS)
and lattice locations
Imaging/
Mapping
GC-MS
5
AFM
Atomic Force Microscopy
H
17
Detection Limits
10 μm
Analytical Spot Size
100 μm
1 mm
10 ppt
1 cm
Bulk
Techniques
GDMS
Ox
n
roge
elium
rine
o
u
l
F
ygen
Elements Detected
th
ep
D
g
in
th
pl
ep
m
th
D
g
Sa
ep
in
D
pl
nm
g
.3
m
in
pl
Sa
r0
m
fo
nm
Sa
it
3
m
lim
or
f
0n
al
it
ic
r3
lim
ys
fo
al
it
Ph
c
i
lim
ys
al
Ph
ic
ys
Ph
N
Accelerator Techniques
Rutherford Backscattering Spectrometry
Nuclear Reaction Analysis
Hydrogen Forward Scattering Spectrometry
Channeling
e
N
F
O
Typical Applications
He
17
VIIA
9
16
VIA
8
Analytical Technique
Detection Range
Atoms/cm3
18
A
VIII
2
Grou
p
1
IA
1
H
1
Hydro
gen
3
The services we provide include dopant and impurity depth profiling, thin film and
coating analysis, bulk composition and impurity analysis, materials characterization,
failure analysis, characterization of particles, defects and residues, crystal structure
determination, roughness measurement and the investigation of thermal properties.
Lithiu
3
19
Na M
g
m
Magn
esium
20
3
IIIB
13
IIIA
4
IVB
18
VIIIA
14
IVA
2
5
15
5
K C 21 22
6
VB
VA
16
6
a Sc
7
23
VIB
VIA
H
17
7
B
e
8
V
2
V
37
4
I
I
I
8
I
B
A
Ti V
C
9
25
38
9
N
5
10
1
2
V
3
3
1
6
III
0
Cr M
Rb S 9 40
O
14
27
11
F
n Fe
r Y
1
28
5
41
IB
12
N
A
e
l
1
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IIB
6
42
55
9
C
S
Z
o
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17
30
43
56
N
N
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6
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18
31
44
S
Cs B
32
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72
C
Z
T
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c
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33
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73
A
G
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47
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87
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35
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75
88
A
P
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d
a
36
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76
S
A
W
Fr R
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50
77
104
B
R
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a
5
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105
1
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K
O
I
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s
5
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1
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9
0
S
6
Rf D
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Ir P
53
80
107
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54
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108
T
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82
Hg
Bh H 109 110
I
83
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Chemir: Providing in-depth analytical investigations and litigation support for a wide
variety of industries, including paints, coatings, plastics and consumer products.
Calci
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Release to Production: Providing electronic testing services to the electronics
and communications industries.
agrosciences: Providing analytical chemistry, environmental fate and metabolism
services for agrochemicals.
Rubid
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Life Sciences: Providing regulated analytical and research/development services to
the pharmaceutical and medical device industries.
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Typical Analysis Depths for Techniques
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The other divisions of EAG provide additional services, allowing us to meet a larger
range of customer needs across many industries.
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Our analytical staff is highly qualified, knowledgeable and very experienced. Over half
of our scientists have advanced degrees in a variety of disciplines, from universities
across the globe. The diversity of disciplines (e.g. chemistry, physics, materials science
and engineering) enables us to skillfully address materials issues from a wide variety
of industries.
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We characterize materials directly for you; we don’t make or sell instruments! Our
scientists use our instruments to the limits of their performance to directly help you
solve your problems.
Our People
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Our Services
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