A Radiation Hardened, High-Voltage, HighPrecision Analog Family
W. H. Newman (Member, IEEE), N. W. van Vonno (Life Senior Member, IEEE), O. Mansilla, L. G. Pearce
and E. J. Thomson
Industrial, Analog and Power, Intersil, a Renesas Corporation, Palm Bay, Florida 32905
Abstract: Intersil has developed a family of radiationhardened, high-voltage, high-precision analog parts in a
complementary bipolar process on bonded-wafer SOI. Parts
in this process, called PR40, include low-noise precision opamps, bandgap voltage references and a temperature sensor.
I. INTRODUCTION
T
HIS paper discusses a family of radiation-hardened,
high-voltage, high-precision analog parts in a
proprietary, advanced complementary bipolar process
on bonded-wafer SOI (BSOI) substrates. This process,
called PR40 [1] and in volume production under MILPRF-38535 certification in its Palm Bay, Florida wafer
fabrication facility, is designed to optimize performance
for high voltage precision analog applications while
providing exceptional total dose tolerance and Single
Event Latchup immunity.
Some of the parts in this process include a family of
low-noise precision op-amps and instrumentation amps, a
family of Bandgap voltage references, a temperature
sensor, and a 32 channel high-current driver. These parts
have been successfully characterized to • 300 krad(Si)
high dose rate (50 - 300rad(Si)/s); • 100 krad(Si) low
dose rate (0.01rad(Si)/s); and have an SEL/SEB threshold
• 86.4MeV-cm2/mg. Some part types have also been
characterized to neutron fluence to • 1 x 1014 n/cm2.
Intersil performs wafer-by-wafer low dose rate
acceptance testing on some versions (EH suffix) of these
part types, as a complement to current high dose rate
acceptance testing and the EH versions are registered as
RHA SMD parts.
II. PROCESS OVERVIEW
The QML certified PR40 process, which has been
briefly reported on previously [2], is a Complementary
Bipolar plus JFET (CBiFET), featuring vertical NPN and
PNP devices with 40V capability. The use of bonded
silicon-on-insulator (BSOI) substrates and deep trench
isolation (DTI) results in latchup-free performance in the
cosmic ray environment where catastrophic SEL is a
serious concern.
The BSOI isolation method allows for the manufacture
of complementary bipolar devices with significant area
reduction, and significantly lower parasitic capacitance,
compared to the junction-isolated devices that are
typically used in high voltage analog circuits. The deep
trench dielectric isolation provides separation of devices
to further minimize capacitance and reduce leakage
current associated with diodes, transistors, etc. The
reduced level of parasitics allow optimization of powerto-bandwidth efficiency and a reduction of overall power
consumption. A cross-section of the process is shown in
Fig. 1.
___________________________________
Manuscript Received - 28 July 2017.
Warren Newman, Nicholas van Vonno, Oscar Mansilla, Lawrence
Pearce and Eric Thomson are with Industrial, Analog and Power, Intersil,
a Renesas Company, Palm Bay, FL, 32905 USA. The corresponding
author’s phone number is (321) 729-5721 and e-mail address is
warren.newman.aj@gr.renesas.com.
‹
Fig. 1. Cross-section drawing of PR40 npn and pnp devices
The PR40 process features a full suite of precision
analog devices including 40V low-noise NPN and vertical
PNP bipolar devices, 40V P- and N-channel JFETs, and
10V super-beta NPNs. In addition, the process offers a
buried Zener, and a well-controlled Schottky diode.
The process is optimized to allow for consistent
matching of devices, with both the NPN and PNP
structures constructed in a similar fashion on a common
substrate. Thin film resistors provide precision matching
in relatively little area. The low temperature coefficient of
the thin film makes it possible to achieve tighter
specifications over wider operating temperatures.
III. PRODUCT FAMILY
A versatile set of high-precision, small footprint, analog
components with operating voltages up to 40V have been
developed. These part types are shown in Table 1 and
described below.
Table 1. INTERSIL PR40 FAMILY OF ANALOG PARTS
Intersil Part
Number
SMD
Number
(5962-)
ISL70444SEH
13214
ISL70244SEH
13248
ISL70219ASEH
ISL70227SxH
ISL70417SEH
ISL70419SEH
14226
12223
12228
14226
ISL70517SEH
12222
ISL70617SEH
15246
ISL70227SxH
15246
ISL71590SEH
ISL71090x
ISL71091x
13215
13211
14208
ISL72813SEH
17208
Description
Single/Dual Supply Quad
Op-Amp
Single/Dual Supply Dual
Op-Amp
Dual Supply Dual Op-Amp
Dual Supply Dual Op-Amp
Dual Supply Quad Op-Amp
Dual Supply Quad Op-Amp
Single Supply RRIO Dual
Op-Amp
SEO Instrumentation OpAmp
RRDO Instrumentation OpAmp
Temperature Sensor
10ppm/°C Voltage Reference
6ppm/°C Voltage Reference
32 Channel High Current
Driver
The ISL70444SEH features four low-power amplifiers
optimized to provide maximum dynamic range [2]. These
op amps feature rail-to-rail operation on the input and
output as well as a slew enhanced front-end that provides
fast slew rates positively proportional to a given step size;
thereby increasing accuracy under transient conditions,
whether it’s periodic or momentary, including improving
SET recovery. They are designed to operate over a single
supply range of 2.7V to 40V or a split supply voltage
range of ±1.35V to ±20V. The ISL70244SEH is the dual
version of the quad op-amp.
The
ISL70219ASEH,
ISL70227SEH
and
ISL70227SRH [3, 4] are dual operational amplifiers with
very low noise, low offset voltage, low input bias current
and low temperature drift over a split supply voltage range
of ±2.25V to ±18V. The ISL70417SEH and
ISL70419SEH are the quad versions.
The ISL70218SEH and ISL70218SRH are dual, lowpower precision amplifiers optimized for single-supply
applications. These op amps have a common-mode input
voltage range extending to 0.5V below the V- rail, a railto-rail differential input voltage range, and rail-to-rail
output voltage swing over 3V to 36V.
The process is also used to implement two high
performance instrumentation amplifiers that are designed
to deliver robust signal processing performance for lowlevel sensor telemetry data critical to communication
satellites. The ISL70517SEH [5] is a differential input,
single-ended output offering. The ISL70617SEH has
similar features but implements a differential input and
rail-to-rail differential output. Both instrumentationamplifiers feature a wide range of gain (including
attenuation), gain error down to 10ppm, typical CMRR of
120dB at a gain equal to 1 and a rail-to-rail output stage
that can be powered from the same supplies as the ADC,
which allows designers to power the input/output stages
from different supplies using individual power supply pins
over a wide operating voltage range of ±4V to ±18V. This
preserves the ADC maximum input dynamic range and
eliminates ADC input overdrive.
The ISL71590SEH is a 2 lead temperature-to-current
transducer with ±1.7°C accuracy without the need of
additional linearization circuitry over a wide operating
range of 4V to 33V. The ISL71590SEH can be used in a
wide range of applications including temperature
compensation networks, laser diode temperature
compensation, sensor bias and linearization functions, and
Proportional To Absolute Temperature (PTAT) biasing. It
has been shown to offer significantly improved hardness
as compared to current industry standard temperature
sensors [6].
The ISL71090x family of voltage references enable
better overall accuracy for 11-bit and 12-bit ADC
resolution applications, offer superior output voltage noise
and a wide range of reference voltages that are stable over
time, temperature and ionizing radiation, as previously
reported on [7].
The ISL71090SEHxx has an input voltage range from
4.0V to 30V, with four output voltage options including
1.25V, 2.5V, 5.0V and 7.5V with a 10ppm/°C temperature
coefficient. The ISL71091SEHxx family offers four
output voltage options comprising 2.048V, 3.3V, 4.096V
and 10.0V and features a 6ppm/°C temperature coefficient
from 4.6V to 30V.
The ISL72813SEH is a 30 volt, 32 channel high current
driver circuit. This device, whose logic diagram is shown
in Fig. 2, utilizes a Sziklai pair or “complementary
Darlington” [8] output configuration to integrate 32
current drivers that feature high-voltage, common emitter,
and open-collector outputs with a 42V breakdown voltage
and peak current rating of 600mA.
Fig. 2. ISL72813SEH Logic Diagram
The part integrates a 5-bit to 32-channel decoder (plus
enable pin), as well as level shifting circuitry, to reference
the output of the decoder to a negative voltage. This
allows the user to select 1 of 32 available current driver
channels. The inputs to the decoder are TTL/CMOS
compatible allowing easy integration to CPUs, FPGAs, or
microprocessors.
Fig. 3. ISL71090SEH25 cross-section versus LET with COUT = 0.1μF,
CCOMP = 1nF and IOUT = 20mA.
The worst case SET was for the case of LET = 56 (Kr
at 60°) and VIN = 4V with about 340mV negative SET
magnitude as shown in Fig. 4. For comparison, the
response at VIN = 30V is shown in Fig. 5. The plots are
composites of all the transients captured on the scope.
IV. SEE TESTING
All of the part-types have completed SEE testing and
the reports are available on the Intersil website. In
addition, the results of some of the testing have been
published [2, 4-7].
The SEE testing was conducted at the Texas A&M
University (TAMU) Cyclotron Institute, Heavy Ion
Facility. Single-Event Burnout (SEB) susceptibility,
Single-Event Dielectric Rupture (SEDR) susceptibility
and Single-Event Transient (SET) performance were
evaluated.
Destructive SEE (SEB/SEDR) testing used Au ions at
normal incidence (LET = 86.4 MeV-cm2/mg) at
maximum supply voltage with a case temperature of
125°C, while SET testing was typically conducted using
ions from some or all of the following species: Ne, Ar, Kr,
Ag, Pr and Au ions (LET = 2.7, 8.5, 28, 43, 60 and 86.4
MeV-cm2 /mg at 25°C). No destructive events were
observed.
Results from the SEE characterization of the 2.5V
variant of the ISL71090SEH family of precision voltage
references, the ISL71090SEH25, are presented as an
illustration of PR40 SEE performance.
The parts were configured with 0.1μF output capacitor,
1nF compensation capacitor and 20mA load current to set
up the worst conditions for negative going transients. Fig.
3 shows the cross-section versus LET for the
ISL71090SEH25 for a ±20mV trigger window at two
different supply voltages.
Fig. 4. Composite SET plots for ISL71090SEH25 at LET = 56, VIN =
4V, IOUT = 20mA, COUT = 0.1μF, CCOMP = 1nF.
Fig. 5. Composite SET plots for ISL71090SEH25 at LET = 56, VIN =
30V, IOUT = 20mA, COUT = 0.1μF, CCOMP = 1nF.
V. TOTAL DOSE TESTING
All of the part-types built on PR40 have been
characterized at low dose rate and high dose rate. While
production testing uses acceptance limits of 100 krad(Si)
high dose rate (50-300rad(Si)/s) and 50 krad(Si) low dose
rate (0.01rad(Si)/s) , results to 450 krad(Si) HDR [2] and
150 krad(Si) LDR [7] have been previously reported.
High dose rate testing was performed using a Gammacell
220 60Co irradiator located in the Palm Bay, Florida
Intersil facility. Low dose rate testing was performed at
0.01rad(Si)/s using the Intersil Palm Bay N40 panoramic
low dose rate 60Co irradiator. Post-irradiation high
temperature biased anneals were performed using a small
temperature chamber.
Samples of the ISL70444SEH quad op amp were
characterized at high dose rate to 300 krad(Si) under
biased conditions, followed by a 50% overtest irradiation
to 450 krad(Si) and a high temperature anneal for 168
hours at 100°C, also under bias. The parts were also tested
to 50 krad(Si) at low dose rate. All parameters passed
SMD limits at all downpoints. Fig 6 shows the positive
and negative supply currents over radiation to illustrate
the minimal shifts of part types built on the PR40 process.
parameter that demonstrates the output drive capability of
the part over radiation, VCE(SAT), at minimum VCC and
maximum VEE and IC is shown in Fig. 8.
Fig. 7. ISL72813SEH Supply Current at VCC = 5.5V and VEE = -34V
over Total Dose. The pre- and post-irradiation SMD limit is 9.5mA
maximum.
Fig. 8. ISL72813SEH Collector Emitter Saturation Voltage at VCC =
3.0V, VEE = -34V, and IC = 530mA over Total Dose. The pre- and postirradiation SMD limit is 1.5V maximum.
Fig. 6. ISL70444SEH Positive and negative power supply currents over
total dose (sum of all 4 channels). The pre- and post-irradiation SMD
limits are +9.6mA (positive supply) and -9.6mA (negative supply).
The ISL72813SEH driver circuit was tested at low and
high dose rates to 75 krad(Si) at 0.01 rad(Si)/s and 150
krad(Si) at 187.2 rad(Si)/s, respectively, under biased and
grounded conditions. Both irradiations were followed by
a biased anneal at +100°C for 168 hours, represented by
PA_L and PA_H on the graphs for Post Anneal Low Dose
and Post Anneal High Dose, respectively. All parameters
showed excellent stability over irradiation, with no
observed dose rate or bias sensitivity. The response of two
key parameters are shown in the following graphs. Fig. 7
illustrates the flat response of the total supply current for
all four conditions at maximum bias conditions. A
VI. NEUTRON TESTING
Several PR40 parts have undergone neutron testing and
some results have been reported [3, 6]. Test reports are
available on the Intersil website for other part types.
Neutron irradiation was performed at the Fast Burst
Reactor (FBR) facility at White Sands Missile Range
(White Sands, NM), which provides a controlled 1MeV
equivalent neutron flux. Parts were tested in an unbiased
configuration with all leads open. Testing proceeded in
general accordance with the guidelines of MIL-STD-883
Test Method 1017.
As an example of the PR40 performance to neutron
fluence, the shifts of two typical parameters of interest of
the ISL70417SEH quad op amp, AVOL and PSRR, are
shown in Figs. 9 and 10. The experimental matrix
consisted of five samples irradiated at 2 x 1012 n/cm2, five
samples irradiated at 1 x 1013 n/cm2, five samples
irradiated at 3 x 1013 n/cm2 and five samples irradiated at
1 x 1014 n/cm2. Two control units were used to insure
repeatable data. It should be realized when reviewing the
data that each neutron irradiation was made on a different
5-unit sample.
REFERENCES
[1] http://www.intersil.com, “PR40 Process Complementary Bipolar Plus JFET (CBiFET) Process”
40V
[2] N. W. van Vonno, B. Williams, R. Hood, E. J. Thomson, S.
K. Bernard, “Total Dose and Single Event Effects Testing of the
Intersil ISL70444SEH Hardened Operational Amplifier,” 2013
IEEE Radiation Effects Data Workshop.
[3] N. W. van Vonno, R. A. Hood, O. Mansilla, E. J. Thomson,
F. C. Ballou, “Results of Displacement Damage Testing of the
Intersil ISL70227SRH Dual Operational Amplifier,” 2012 IEEE
Radiation Effects Data Workshop.
[4] N. W. van Vonno, L. G. Pearce, R. Hood, E. T. Thomson, T.
M. Bernard, P. J. Chesley, “Total dose and single event testing
of the Intersil ISL70227RH low-noise operational amplifier,”
presented at the 2011 Radiation Effects on Components &
Systems Conference (RADECS).
Fig. 9. ISL70417SEH positive open-loop gain (AVOL) for each
channel with ±15V supplies over neutron irradiation. The pre- and postirradiation limits are 129.5dB minimum.
[5] N. W. van Vonno, L. G. Pearce, S. D. Turner, D. B.
LaFontaine, E. J. Thomson, “Total Dose and Single-Event
Effects Testing of the Intersil ISL70517SEH Instrumentation
Amplifier,” presented at the 2016 Radiation Effects on
Components & Systems Conference (RADECS).
[6] N. W. van Vonno, S. D. Turner, E. J. Thomson, B. Williams,
S. J. Schulte, L. G. Gough, J. E. Shick, “Radiation Testing
Results for the Intersil ISL71590SEH Temperature Sensor,”
2013 IEEE Radiation Effects Data Workshop.
[7] N. W. van Vonno, B. Williams, S. D. Turner, E. J. Thomson,
S. K. Bernard, D. N. Goodhew, “Total Dose and Single Event
Effects Testing of the Intersil ISL71090SEH and ISL71091SEH
Precision Voltage References,” 2014 IEEE Radiation Effects
Data Workshop.
[8] Horowitz, Paul; Winfield Hill (2015). The Art of Electronics,
Third Edition. Cambridge University Press.
Fig. 10. ISL70417SEH positive power supply rejection ratio (PSRR)
for each channel with ±15V supplies over neutron irradiation. The preand post-irradiation SMD limit is 120dB minimum.
VII. CONCLUSION
Intersil has developed a family of radiation-hardened,
high-voltage, high-precision analog parts in a proprietary,
advanced complementary bipolar processes on bonded-SOI
substrates called PR40. This process facilitates the design
of critical part-types for high voltage precision analog
space applications while providing excellent total dose
tolerance and Single Event Latchup immunity. The parts in
this process include a family of low-noise high-precision
op-amps and instrumentation amps, a family of bandgap
voltage references, a temperature sensor, and a 32 channel
high-current driver.