The Canadian International College
of Engineering
Department of Electronics and Electrical Communications
Assignment #2
Due next week at the end of the week on Thursday (24/10) at 12 am
Fall 2019
ENG : Ahmed E. Ahmed
ELEC 3165
Dr.Sahar Hamed
Vcc=5V
Problem (1):
Consider the DTL circuit shown, Given that
the BJT parameters β=50, 𝑉𝐵𝐸 (𝑂𝑁) = 0.7𝑉 ,
𝑉𝐶𝐸 (𝑆𝐴𝑇) = 0.2𝑉 , the diode in the conduction
mode the voltage drop across it is 0.7V
Verify that circuit shown acts as NAND
VA
Gate .
V0
VB
Vcc=5V
Problem (2):
Consider the DTL circuit shown, Given
that the BJT parameters β=50, 𝑉𝐵𝐸 (𝑂𝑁) =
0.7𝑉 , 𝑉𝐶𝐸 (𝑆𝐴𝑇) = 0.2𝑉 , the diode in the
conduction mode the voltage drop across it
is 0.7V
Verify that circuit shown acts as NAND
Gate .
V0
VA
Vcc=5V
Problem (3):
Consider the DTL circuit shown, Given that
the BJT parameters β=50, 𝑉𝐵𝐸 (𝑂𝑁) = 0.7𝑉 ,
𝑉𝐶𝐸 (𝑆𝐴𝑇) = 0.2𝑉 , the diode in the conduction
mode the voltage drop across it is 0.7V
Verify that circuit shown acts as NAND
Gate .
V0
The Canadian International College
of Engineering
Department of Electronics and Electrical Communications
Assignment #2
Due next week at the end of the week on Thursday (24/10) at 12 am
Vcc=5V
Problem (4):
Consider the DTL circuit shown, Given
that the BJT parameters β=50, 𝑉𝐵𝐸 (𝑂𝑁) =
0.7𝑉 , 𝑉𝐶𝐸 (𝑆𝐴𝑇) = 0.2𝑉 , the diode in the
conduction mode the voltage drop across
it is 0.7V
Verify that circuit shown acts as NAND
Gate .
Problem (5):
Implement a 2 input AND gate using diode logic circuits. Explain how to transform it
into a NAND gate if possible .
Problem (6):
Consider the DTL circuit shown, Given that the BJT parameters β=50, 𝑉𝐵𝐸 (𝑂𝑁) = 0.7𝑉 ,
𝑉𝐶𝐸 (𝑆𝐴𝑇) = 0.2𝑉 , the diode in the conduction mode the voltage drop across it is 0.7V
Verify that circuit shown acts as NAND
Gate .
V0