SPEC No.
EL15Y080C
ISSUE: May 20 2005
To ;
S P E C I F I C AT I O N S
Product Type
Dual Band Power Amplifier MMIC for 2.4GHz & 5GHz W-LAN
IRM046U7
Model No.
※This specifications contains 27 pages including the cover and appendix.
If you have any objections, please contact us before issuing purchasing order.
CUSTOMERS ACCEPTANCE
DATE :
BY :
PRESENTED BY :
BY :
T. Ohno
Division Deputy General Manager
REVIEWED BY :
PREPARED BY :
Product Development Dept. II
Analog IC Division
Integrated Circuits Group
SHARP CORPORATION
○ Handle this document carefully for it contains material protected by international copyright law. Any
reproduction, full or in part, of this material is prohibited without the express written permission of the
company.
○ When using the products covered herein, please observe the conditions written herein and the precautions
outlined in the following paragraphs. In no event shall the company be liable for any damages resulting from
failure to strictly adhere to these conditions and precautions.
① The products covered herein are designed and manufactured for the following application areas. When
using the products covered herein for the equipment listed in Paragraph②, even for the following
application areas, be sure to observe the precautions given in Paragraph②. Never use the products for
the equipment listed in Paragraph③.
Office electronics
Instrumentation and measuring equipment
Machine tools
Audiovisual equipment
Home appliances
Communication equipment other than for trunk lines
② Those contemplating using the products covered herein for the following equipment which demands high
reliability, should first contact a sales representative of the company and then accept responsibility for
incorporating into the design fail-safe operation, redundancy, and other appropriate measures for ensuring
reliability and safety of the equipment and the overall system.
Control and safety devices for airplanes, trains, automobiles, and other
transportation equipment
Mainframe computers
Traffic control systems
Gas leak detectors and automatic cutoff devices
Rescue and security equipment
Other safety devices and safety equipment, etc.
③ Do not use the products covered herein for the following equipment, which demands extremely high
performance in terms of functionality, reliability, or accuracy.
Aerospace equipment
Communications equipment for trunk lines
Control equipment for the nuclear power industry
Medical equipment related to life support, etc.
④ Please direct all queries and comments regarding the interpretation of the above three paragraphs to a sales
representative of the company.
○ Please direct all queries regarding the products covered herein to a sales representative of the company.
1
IRM046U7
[ IRM046U7 ]
CONTENTS
Page
1.
Description
2
2.
Pin Connections and Names
3
3.
Absolute Maximum Ratings
3
4.
Electrical Characteristics
4
5.
Application Information
6
6.
Package outline
12
2
IRM046U7
1. Description
(1) Functions
The IRM046U7 is a dual-band power amplifier GaAs MMIC designed for 2.4 GHz & 5 GHz W-LAN
operating at 3.3 V supply.
The MMIC consists of 2 amplifiers, one is three-stage amplifier for 5GHz (IRM048U7) and the other is
two-stage amplifier for 2.4 GHz (IRM047U7).
Each amplifier consists of npn HBTs (Hetero-junction Bipolar Transistors), detector diode and
matching circuitry, except input and output matching circuitry.
Vbb1 Vcc1
-LB
-LB
RFin
-LB
IRM046U7
Vbb2 Vdd Vdet Vcc2
-LB -LB -LB -LB
Internal
matching
RFout
-LB
IRM047U7
IRM048U7
RFin
-HB
Internal
matching
Vbb1&2 Vcc1
-HB
-HB
Internal
matching
Vcc2
-HB
RFout
-HB
Vbb3Vdd Vdet Vcc3
-HB -HB -HB -HB
(2) Features
・RoHS Directive Compliance
・Single Positive Supply Operation
・Power Down Mode(Very Low Leak Current)
・High Efficiency, Low Distortion
・Low Idle Current
・Small and low profile plastic package (HQFN24, 0.5mm pitch)
・Not designed or rated as Radiation hardened
・Power Detector embedded
(3) Applications
・W-LAN(IEEE.802.11a/b/g, 802.11a/g, 802.11a/b)
・Driver Amplifier for FWA system (LMDS, MMDS, PCS)
・Other linear wireless communication system around 2GHz band.
(*) This Data sheet describes specifications only for W-LAN application.
Please ask the application note for other applications.
(4) Handle with care
・ESD(Electro-Static Discharge) sensitive.
The ESD strength of these IC's is 300V minimum for CDM(Charged Device Model), and 20V
minimum for HBM(Human Body Model) (100pF, 1.5kΩ).
・Gallium (Ga) and Arsenic (As) specified as poisonous chemicals by law. For the prevention of a
hazard, do not burn, destroy, or process chemically to make them as gas or powder.
When the product is disposed, please follow the related regulation and do not mix this with general
industrial waste or household waste.
3
IRM046U7
2. Pin Connection and Names
(1) Pin Connection & Pinning
(2) Pinning
Pin name
Pin #
Pin name
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
(12)
Vbb1-LB
RFin-LB
GND
GND
RFin-HB
Vbb1&2-HB
Vcc1-HB
N.C.
Vcc2-HB
Vbb3-HB
Vdd-HB
Vdet-HB
(13)
(14)
(15)
(16)
(17)
(18)
(19)
(20)
(21)
(22)
(23)
(24)
(25)
RFout / Vcc3-HB
RFout / Vcc3-HB
RFout / Vcc3-HB
GND
GND
RFout / Vcc2-LB
N.C.
N.C.
Vdet-LB
Vdd-LB
Vbb2-LB
Vcc1-LB
GND
N.C.
N.C.
Vdet_LB
Vdd_LB
Vbb2_LB
Vcc1_LB
24
Pin #
19
18 RFout / Vcc2_LB
Vbb1_LB 1
GND
RFin_LB
GND
GND
25
GND
GND
RFout / Vcc3_HB
RFin_HB
RFout / Vcc3_HB
Vbb1&2_HB 6
13 RFout / Vcc3_HB
7
12
Vdet_HB
Vdd_HB
Vbb3_HB
Vcc2_HB
N.C.
Vcc1_HB
(3) Pin explanation
Pin #
Pin name
(2)
RFin-LB
(1)
(23)
Vbb1-LB
Vbb2-LB
(24)
Vcc1-LB
(18)
RFout /
Vcc2-LB
explanation
RF input pin
for 2.4GHz band PA
DC control pin
for 2.4GHz band PA
DC supply pin
for 2.4GHz band PA
DC supply and RF output pin
for 2.4GHz band PA
Pin #
Pin name
(5)
RFin-HB
Vdd-LB
3. Absolute Maximum Ratings
Absolute Maximum Ratings
and
Parameter
Symbol
DC supply voltage
DC control voltage
Input RF power
Peak supply current
Total DC power dissipation
Storage temperature range
Operating temperature range
(Case surface)
Vcc
Vbb
Pin
Icc
Pt
Tstg
RF input pin
for 5GHz band PA
DC control pin
for 5GHz band PA
DC supply pin
for 5GHz band PA
(6) Vbb1&2-HB
(10)
Vbb3-HB
(7)
Vcc1-HB
(9)
Vcc2-HB
(13)
RFout /
(14)
Vcc3-HB
(15)
DC supply pin for power detector
(11)
of 2.4GHz band PA
DC voltage output pin for power detector
(21)
Vdet-LB
(12)
of 2.4GHz band PA
(3),(4)
(8)
(16),(17)
GND
GND pin
(19)
(25)
(20)
(22)
explanation
DC supply and RF output pin
for 5GHz band PA
DC supply pin for power detector
of 5GHz band PA
DC voltage output pin for power detector
of 5GHz band PA
Vdd-HB
Vdet-HB
Not used in PKG.
Recommended to be connected to GND pin
N.C.
Recommended Operating Conditions
Condition
Tc_opr = 25 °C
Tc_opr
Rating
Unit
6
3
6
0.4
1
-35 ~ +120
V
V
dBm
A
W
°C
-25 ~ +85
°C
Recommended Operating Conditions
Parameter
DC supply voltage
DC control voltage
(*1)
Symbol
Vcc
Vbb
Rating
Condition
Unit
Min.
Typ.
Max.
2.7
3.3
2.8
3.6 (*1)
V
V
This PA could operate over 3.6V for high output operation, please ask application note.
4
IRM046U7
4. Electrical Characteristics
(1) Low Band Characteristics
The performance is guaranteed only with the test jig which has the external output circuit in it,
specified by Sharp Corporation. Test conditions are Tc_opr = 25 °C, Vcc = 3.3 V, Vbb = 2.8 V,
ZS = 50 Ω, ZL = 50 Ω, if otherwise noted.
Tc_opr = 25 °C
Parameter
Sine Wave
Frequency
Leak Current
Idle Current
Saturated Power
Power Gain
Collector Current
Control Current
Symbol
Freq
Icc_leak
Icc_idle
Psat
Gain
Icc
Ibb
Maximum Load mismatch
(*2)
-
Load stability
(*2)
-
Test Condition
Vcc = 6 V, Vbb = 0 V, No RF Input
Vcc = 3.3 V, Vbb = 2.8 V, No RF Input
Vcc = 3.3 V, Vbb = 2.8 V
Vcc = 3.3 V, Vbb = 2.8 V,
Pout = 18 dBm
Vcc = 3.6 V, Vbb = 2.8 V
Pin = -10 dBm(Sine Wave)
VSWR = 5, all phases
Freq = 2.40 ~ 2.50 GHz
Vcc = 2.7 ~ 3.6 V, Vbb = 2.8 V
Pin = -10 dBm(Sine Wave)
VSWR = 5, all phases
Freq = 2.40 ~ 2.50 GHz
Min.
Typ.
Max.
Unit
2.4
2.45
0.02
55
28
30
105
5
2.5
0.5
85
GHz
26
27
140
8
µA
mA
dBm
dB
mA
mA
No permanent degradation
Spurious < -60 dBc
The value shown below is a reference value and the performance is got only with the test jig
which has the external output circuit in it, specified by Sharp Corporation.
Test conditions are Tc_opr = 25 °C, Vcc = 3.3 V, Vbb = 2.8 V,
ZS = 50 Ω, ZL = 50 Ω, if otherwise noted.
Tc_opr = 25 °C
IEEE802.11g
Parameter
(*2)
(*3)
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Power Gain
Collector Current
Gain_m
Icc_m
30
105
dB
mA
Control Current
Ibb_m
5
ｍA
mA
Detector Bias Current
Input VSWR
2nd Harmonics
3rd Harmonics
Adjacent Channel
Power Rejection
Alt. Adjacent Channel
Power Rejection
Idd_m
VSWRin_m
Vcc = 3.3 V, Vbb = 2.8 V, Vdd = 2.8 V
2fo_m
Pout = 18 dBm
3fo_m
IEEE802.11g Input
(OFDM 64QAM 54Mbps)
ACPR1_m
Freq = 2.40 ~ 2.50 GHz
0.2
1.5
-47
-45
dBc
dBc
-37
dBc
ACPR2_m
-51
dBc
EVM
EVM
Detector Voltage
Vdet
guaranteed by design only
Corrected EVM : Calculated by below format.
EVM2 = EVM(meas) 2 - EVM(SG) 2
3
(*3)
1.90
%
V
5
IRM046U7
(2) High Band Characteristics
The performance is guaranteed only with the test jig which has the external output circuit in it,
specified by Sharp Corporation. Test conditions are Tc_opr = 25 °C, Vcc = 3.3 V, Vbb = 2.8 V,
ZS = 50 Ω, ZL = 50 Ω, if otherwise noted.
Tc_opr = 25 °C
Parameter
Sine Wave
Frequency
Leak Current
Idle Current
Saturated Power
Power Gain
Collector Current
Control Current
Symbol
Freq
Icc_leak
Icc_idle
Psat
Gain
Icc
Ibb
Maximum Load mismatch
(*2)
-
Load stability
(*2)
-
Test Condition
Min. Typ. Max.
4.9
Vcc = 6 V, Vbb = 0 V, No RF Input
Vcc = 3.3 V, Vbb = 2.8 V, No RF Input
Vcc = 3.3 V, Vbb = 2.8 V
Vcc = 3.3 V, Vbb = 2.8 V,
Pout = 18 dBm
Vcc = 3.6 V, Vbb = 2.8 V
Pin = -10 dBm(Sine Wave)
VSWR = 5, all phases
Freq = 4.90 ~ 5.90 GHz
Vcc = 2.7 ~ 3.6 V, Vbb = 2.8 V
Pin = -10 dBm(Sine Wave)
VSWR = 5, all phases
Freq = 4.90 ~ 5.90 GHz
25
22
0.02
75
27
25
140
6.5
5.9
0.5
110
180
9.5
Unit
GHz
µA
mA
dBm
dB
mA
mA
No permanent degradation
Spurious < -60 dBc
The value shown below is a reference value and the performance is got only with the test jig
which has the external output circuit in it, specified by Sharp Corporation.
Test conditions are Tc_opr = 25 °C, Vcc = 3.3 V, Vbb = 2.8 V,
ZS = 50 Ω, ZL = 50 Ω, if otherwise noted.
Tc_opr = 25 °C
IEEE802.11a
Parameter
(*2)
(*3)
Symbol
Test Condition
Min. Typ. Max.
Unit
Power Gain
Collector Current
Gain_m
Icc_m
25
140
dB
mA
Control Current
Ibb_m
6.5
ｍA
mA
Detector Bias Current
Input VSWR
2nd Harmonics
3rd Harmonics
Adjacent Channel
Power Rejection
Alt. Adjacent Channel
Power Rejection
Idd_m
VSWRin_m
Vcc = 3.3 V, Vbb = 2.8 V, Vdd = 2.8 V
2fo_m
Pout = 18 dBm
3fo_m
IEEE802.11a Input
(OFDM 64QAM 54Mbps)
ACPR1_m
Freq = 4.90 ~ 5.90 GHz
0.2
1.5
-41
-38
dBc
dBc
-37
dBc
ACPR2_m
-51
dBc
EVM
EVM
Detector Voltage
Vdet
guaranteed by design only
Corrected EVM : Calculated by below format.
EVM2 = EVM(meas) 2 - EVM(SG) 2
2
(*3)
1.95
%
V
6
IRM046U7
5. Application Information
(1) Example of Evaluation Circuits
C5
Vdd-LB
T7
Vcc-LB
T6
C8
Vdet-LB
R1
C6
C7
C10
T5
T3
L2
Vbb-LB
C9
C2
C4
T4
L1
RFout-LB
RFin-LB
T2
IRM046U7
T10
T11
R2
T8
C12
RFin-HB
T9
C11
T12
T13
RFout-HB
C13
C1
L3
T1
C3
C14
C15
Vbb-HB
C24
C23
C22
C21
C18
C19
C16
C17
T15
R3
Vdet-HB
T16
T14
Vdd-HB
C20
Vcc-HB
Figure 1. Sch ematic of Evaluation Circuit
Vbb
-LB
Vdd
-LB
Vdet
-LB
Vcc
-LB
RFin-LB
RFout-LB
RFin-HB
RFout-HB
Vbb
-HB
Vdd
-HB
Vdet
-HB
Vcc
-HB
Board Material : FR-4
Figure 2. Pattern Layout of Evaluation Circuit
7
IRM046U7
Symbol
Value
C1
C2
C3, C16, C18, C23
C4, C5, C6, C9, C15, C20
C7, C8, C17, C19, C21, C22
C10, C24
C11, C12
C13
C14
L1, L2
L3
R1, R3
R2
T1
T2, T9, T10
T3
T4
Vendor
4.5
pF
KYOCERA
2.0
pF
KYOCERA
3.0
pF
KYOCERA
1000
pF
KYOCERA
0.1
uF
KYOCERA
1
uF
KYOCERA
0.5
pF
KYOCERA
0.3
pF
KYOCERA
1.0
pF
KYOCERA
1.2
nH
TDK
8.2
nH
TDK
10000
Ohm
ROHM
30
Ohm
ROHM
50 Ohm micro strip line
50 Ohm micro strip line
50 Ohm micro strip line
50 Ohm micro strip line
Parts Number
CM05CH4R5B50A
CM05CH2R0B50A
CM05CH3R0B50A
CM05W5R102K50A
CM05B104K10A
CM105W5R105M10A
CM05CHR50B50A
CM05CHR30B50A
CM05CH1R0B50A
MLK1005S1N2S
MLK1005S8N2D
MCR MZSJ 103
MCR MZSJ 300
length = 0.6 mm
length = 0.7 mm
length = 1.5 mm
length = 0.2 mm
54 Ohm ~ 73 Ohm micro strip line
length = 1.0 mm
T6
54 Ohm ~ 73 Ohm micro strip line
length = 1.5 mm
T7, T15
54 Ohm ~ 73 Ohm micro strip line
length > 1.0 mm
length = 0.8 mm
length = 1.2 mm
length = 1.0 mm
length = 0.5 mm
T5, T14, T16
T8
T11
T12
T13
50 Ohm micro strip line
50 Ohm micro strip line
50 Ohm micro strip line
50 Ohm micro strip line
Table 1. Parts List of Evaluation Circuits
8
IRM046U7
(2) Electrical characteristics examples
Low Band Frequency Characteristics
Low Band Frequency Characteristics
30
6
25
5
20
4
15
3
10
2
5
1
2.35
2.40
2.45
2.50
2.55
Gain
Vdet
EVM
-35
-40
ACPR1
ACPR2
-45
2f o
3f o
-50
-55
-60
2.30
0
2.60
2.35
2.40
2.45
2.50
2.55
2.60
Freq(GHz)
Freq(GHz)
Low Band Frequency Characteristics
Low Band Output Pow er Characteristics
Freq. = 2.45 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
Pout = 18 dBm, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
120
9
110
8
10
35
9
8
30
7
80
5
70
4
Icc
Ibb
Gain_m(dB)
6
90
7
Ibb_m(mA)
Icc_m(mA)
100
5
4
20
3
Gain
Vdet
EVM
2
15
3
60
6
25
EVM(%), Vdet(V)
0
2.30
Pout = 18 dBm, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
-30
ACPR_m, 2fo_m, 3fo_m (dBc)
7
EVM(%), Vdet(V)
Gain_m(dB)
Pout = 18 dBm, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
35
1
2.35
2.40
2.45
2.50
2.55
2
2.60
0
10
0
Freq(GHz)
20
30
Pout(dBm)
Low Band Output Pow er Characteristics
Low Band Output Pow er Characteristics
Freq. = 2.45 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
Freq. = 2.45 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
-10
300
10
-20
250
9
200
8
150
7
100
6
50
5
-30
ACPR1
ACPR2
-40
2f o
3f o
-50
-60
-70
Icc_m(mA)
ACPR_m, 2fo_m, 3fo_m (dBc)
10
4
0
0
10
20
Pout(dBm)
30
0
10
20
Pout(dBm)
Figure 3. Low Band Amplifier Characteristics
30
Ibb_m(mA)
50
2.30
Icc
Ibb
9
IRM046U7
High Band Frequency Characteristics
HIgh Band Frequency Characteristics
Pout = 18 dBm, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
30
6
25
5
20
4
15
3
10
2
5
1
Gain
Vdet
EVM
0
5.0
5.2
5.4
5.6
5.8
6.0
-30
ACPR1
-40
ACPR2
2f o
-50
3f o
-60
-70
4.8
6.2
5.0
5.2
Freq(GHz)
5.4
5.6
5.8
6.0
6.2
Freq(GHz)
HIgh Band Frequency Characteristics
High Band Output Pow er Characteristics
Freq. = 5.25 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
Pout = 18 dBm, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
170
12
160
11
10
35
9
8
30
10
130
8
120
7
110
6
100
4.8
5
Icc
Ibb
Gain_m(dB)
9
140
7
Ibb_m(mA)
Icc_m(mA)
150
6
25
5
4
20
3
EVM(%), Vdet(V)
0
4.8
-20
ACPR_m, 2fo_m, 3fo_m (dBc)
7
EVM(%), Vdet(V)
Gain_m(dB)
Pout = 18 dBm, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
35
Gain
Vdet
EVM
2
15
1
5.2
5.4
5.6
5.8
6.0
6.2
0
0
10
Freq(GHz)
30
Pout(dBm)
HIgh Band Output Pow er Characteristics
HIgh Band Output Pow er Characteristics
Freq. = 5.25 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
Freq. = 5.25 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
-10
-20
-30
ACPR1
ACPR2
-40
2f o
3f o
-50
-60
-70
Icc_m(mA)
ACPR_m, 2fo_m, 3fo_m (dBc)
20
400
13
350
12
300
11
250
10
200
9
150
8
100
7
50
6
5
0
0
10
20
Pout(dBm)
30
0
10
20
Pout(dBm)
Figure 4. High Band Amplifier Characteristics
30
Ibb_m(mA)
5.0
10
Icc
Ibb
10
High Band Output Pow er Characteristics
HIgh Band Output Pow er Characteristics
Freq. = 5.85 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
Freq. = 5.85 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
15
30
12
25
9
20
6
15
-10
Gain
Vdet
EVM
3
10
10
20
-20
-30
ACPR1
ACPR2
-40
2f o
3f o
-50
-60
-70
0
0
ACPR_m, 2fo_m, 3fo_m (dBc)
35
EVM(%), Vdet(V)
Gain_m(dB)
IRM046U7
0
30
10
20
Pout(dBm)
Pout(dBm)
HIgh Band Output Pow er Characteristics
400
13
350
12
300
11
250
10
200
9
150
8
100
7
50
6
0
Ibb_m(mA)
Icc_m(mA)
Freq. = 5.85 GHz, Vcc = 3.3 V, Vbb = 2.8 V, Tc_opr = 25 ℃, OFDM 64QAM 54Mbps
Icc
Ibb
5
0
10
20
30
Pout(dBm)
Figure 5. High Band Amplifier Characteristics(5.85 GHz)
30
11
IRM046U7
Low Band Operating Temperature Characteristics
Low Band Operating Temperature Characteristics
7
35
15
3
10
2
Vdet
EVM
1
5
0
25
50
75
10
180
9
160
8
140
7
120
6
100
5
80
4
60
3
40
2
20
1
0
-50
-25
0
25
Tc_opr(℃)
Gain_m(dB)
4
20
15
3
10
2
Gain
Vdet
EVM
Icc_m(mA)
5
25
EVM(%), Vdet(V)
6
30
1
5
25
50
75
200
10
180
9
160
8
140
7
120
6
100
5
80
4
60
3
40
2
20
1
0
-50
0
100
-25
0
25
High Band Operating Temperature Characteristics
Gain_m(dB)
4
20
15
3
10
2
1
5
Tc_opr(℃)
50
75
0
100
Gain
Vdet
EVM
Icc_m(mA)
5
25
EVM(%), Vdet(V)
6
30
25
0
100
High Band Operating Temperature Characteristics
7
35
0
75
Ibb
Pout =1 8 dBm, Freq. = 5.85 GHz, Vcc = 3.3 V, Vbb = 2.8 V, OFDM 64QAM 54Mbps
Pout = 18 dBm, Freq. = 5.85 GHz, Vcc = 3.3 V, Vbb = 2.8 V, OFDM 64QAM 54Mbps
-25
50
Icc
Tc_opr(℃)
Tc_opr(℃)
0
-50
0
100
High Band Operating Temperature Characteristics
7
0
Ibb
Pout = 18 dBm, Freq. = 5.25 GHz, Vcc = 3.3 V, Vbb = 2.8 V, OFDM 64QAM 54Mbps
Pout = 18d Bm, Freq. = 5.25 GHz, Vcc = 3.3 V, Vbb = 2.8 V, OFDM 64QAM 54Mbps
35
-25
75
Icc
Tc_opr( ℃)
High Band Operating Temperature Characteristics
0
-50
50
Ibb_m(mA)
-25
0
100
200
200
10
180
9
160
8
140
7
120
6
100
5
80
4
60
3
40
2
20
1
0
-50
-25
0
25
Tc_opr(℃)
Figure 6. Operating Temperature characteristics
50
75
0
100
Ibb_m(mA)
Gain_m(dB)
4
20
Gain
Icc_m(mA)
5
25
EVM(%), Vdet(V)
6
30
0
-50
Pout = 18 dBm, Freq. = 2.45 GHz, Vcc = 3.3 V, Vbb = 2.8 V, OFDM 64QAM 54Mbps
Ibb_m(mA)
Pout = 18 dBm, Freq. = 2.45 GHz, Vcc = 3.3 V, Vbb = 2.8 V, OFDM 64QAM 54Mbps
Icc
Ibb