HMC605LP3 / 605LP3E
v03.0809
LOW NOISE AMPLIFIERS - SMT
8
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Typical Applications
Features
The HMC605LP3 / HMC605LP3E is ideal for:
Noise Figure: 1.1 dB
• Wireless Infrastructure
Output IP3: +31 dBm
• Customer Premise Equipment
Gain: 20 dB
• Fixed Wireless
Low Loss & Failsafe Bypass Path
• WiMAX & WiBro
Single Supply: +3V or +5V
• Tower Mounted Amplifiers
50 Ohm Matched Input / Output
Functional Diagram
General Description
The HMC605LP3 / HMC605LP3E are versatile, high
dynamic range GaAs MMIC Low Noise Amplifiers that
integrate a low loss LNA bypass path on the IC. The
amplifier is ideal for WiBro & WiMAX receivers operating between 2.3 and 2.7 GHz and provides 1.1 dB
noise figure, 20 dB of gain and +31 dBm output IP3
from a single supply of +5V @ 74 mA. Input and output return losses are 14 and 15 dB respectively with
no external matching components required. A single
control line (Vctl) is used to switch between LNA mode
and a low 2 dB loss bypass mode and reduces the
current consumption to 10 μA. The HMC605LP3 is
failsafe and will default to the bypass mode with no
DC power applied.
Electrical Specifi cations, TA = +25° C, Vdd = +5V
LNA Mode
Bypass Mode
Parameter
Units
Min.
Frequency Range
Typ.
Max.
Min.
2.3 - 2.7
Gain
17.5
Gain Variation Over Temperature
Typ.
Max.
2.3 - 2.7
20.5
-3.0
0.012
GHz
-2.0
dB
0.002
dB / °C
Noise Figure
1.1
Input Return Loss
14
1.3
13
dB
dB
Output Return Loss
15
13
dB
Reverse Isolation
33
Output Power for 1dB Compression (P1dB)*
17
16
dBm
Output Third Order Intercept (IP3)*
(-20 dBm Input Power per tone, 1 MHz tone spacing)
31
Supply Current (Idd)
74
dB
dBm
0.01
mA
LNA Mode to Bypass Mode
-
90
6.0
ns
Bypass Mode to LNA Mode
60
-
ns
Swtiching Speed
* P1dB for LNA Mode is referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.
8 - 230
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
30
25
2.5
20
2
15
1.5
10
1
GAIN (dB), P1dB (dBm)
10
S21
S11
S22
0
-10
-20
Gain
P1dB
5
-30
-40
0.5
Noise Figure
0
0
1
2
3
4
5
6
3
3.5
FREQUENCY (GHz)
4
4.5
5
Vdd (Vdc)
LNA Gain vs. Temperature
LNA Noise Figure vs. Temperature
1.6
24
NOISE FIGURE (dB)
GAIN (dB)
22
20
18
+25C
+85C
-40C
16
14
2.3
2.4
2.5
2.6
1.2
0.8
+25C
-40C
+85C
0.4
0
2.3
2.7
2.4
FREQUENCY (GHz)
1.5
22
1.3
NOISE FIGURE (dBm)
GAIN (dB)
2.6
2.7
2.6
2.7
LNA Noise Figure vs. Vdd
24
20
18
+3V
+5V
16
2.4
2.5
FREQUENCY (GHz)
LNA Gain vs. Vdd
14
2.3
NOISE FIGURE (dB)
RESPONSE (dB)
20
LOW NOISE AMPLIFIERS - SMT
8
LNA – Gain, Noise Figure &
Power vs. Supply Voltage @ 2.5 GHz
LNA Broadband Gain & Return Loss
2.5
FREQUENCY (GHz)
1.1
3V
5V
0.9
0.7
2.6
2.7
0.5
2.3
2.4
2.5
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 231
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LNA Output Return Loss vs. Temperature
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
LNA Input Return Loss vs. Temperature
-10
-15
-20
+25C
+85C
-40C
-25
-30
2.3
2.3
2.4
2.5
2.5
+25C
+85C
-40C
-10
-15
-20
-25
2.5
2.6
2.6
-30
2.3
2.7
2.3
2.4
FREQUENCY (GHz)
2.5
2.5
2.5
2.6
2.7
2.6
2.7
LNA Output IP3 vs. Vdd
40
35
35
33
IP3 (dBm)
30
31
29
25
+3V
+5V
20
+25C
-40C
+85C
27
25
2.3
2.3
2.4
2.5
2.5
2.5
15
2.6
2.6
10
2.3
2.7
2.3
2.4
LNA Psat vs. Temperature
2.5
2.6
24
+25C
+85C
-40C
+25C
+85C
-40C
22
P1dB (dBm)
22
PSAT (dBm)
2.5
LNA Output P1dB vs. Temperature
24
20
18
16
14
2.3
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
20
18
16
2.4
2.5
FREQUENCY (GHz)
8 - 232
2.6
FREQUENCY (GHz)
LNA Output IP3 vs. Temperature
IP3 (dBm)
LOW NOISE AMPLIFIERS - SMT
8
2.6
2.7
14
2.3
2.4
2.5
2.6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2.7
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LNA Output P1dB vs. Vdd
LNA Reverse Isolation vs. Temperature
20
ISOLATION (dB)
P1dB (dBm)
-10
12
+3V
+5V
8
+25C
+85C
-40C
-20
-30
4
0
2.3
2.4
2.5
2.6
-40
2.3
2.7
2.4
FREQUENCY (GHz)
Bypass Mode
Broadband Insertion Loss & Return Loss
2.7
INSERTION LOSS (dB)
0
-10
RESPONSE (dB)
2.6
Bypass Mode
Insertion Loss vs. Temperature
0
-20
S21
S11
S22
-30
1
-1
-2
+25C
+85C
-40C
-3
-4
-5
2.3
-40
2
3
4
5
6
2.4
Bypass Mode
Input Return Loss vs. Temperature
2.6
2.7
Bypass Mode
Output Return Loss vs. Temperature
0
-5
-5
RETURN LOSS (dB)
0
-10
-15
+25C
+85C
-40C
-20
2.5
FREQUENCY (GHz)
FREQUENCY (GHz)
RETURN LOSS (dB)
2.5
FREQUENCY (GHz)
LOW NOISE AMPLIFIERS - SMT
0
16
-25
-30
2.3
8
-10
-15
+25C
+85C
-40C
-20
-25
2.3
2.4
2.5
2.5
2.5
FREQUENCY (GHz)
2.6
2.6
2.7
-30
2.3
2.3
2.4
2.5
2.5
2.5
2.6
2.6
2.7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 233
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
LOW NOISE AMPLIFIERS - SMT
8
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
RF Input Power (RFIN)
(Vdd = +5.0 Vdc)
Typical Supply Current vs. Vdd
+8 Vdc
LNA Mode
Bypass Mode
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.7 mW/°C above 85 °C)
890 mW
Thermal Resistance
(channel to ground paddle)
73 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
Vdd (Vdc)
Idd (mA)
+5
74
+3
28
+15 dBm
+30 dBm
Truth Table
-40 to +85° C
LNA Mode
Vctl = Vdd ±0.3V
Bypass Mode
Vctl= 0V ±0.3V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC605LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC605LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
605
XXXX
[2]
605
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
8 - 234
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Pin Number
Function
Description
1, 2, 5, 6,
8, 12, 13
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
3
RFIN
This pin is AC coupled and matched to 50 Ohms.
See application circuit.
4, 7, 9, 11, 15
GND
These pins must be connected to RF/DC ground.
10
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
14
Vdd
Power supply voltage. Bypass capacitors are required. See
application circuit.
16
Vctl
Mode Control Voltage. See truth table.
Interface Schematic
LOW NOISE AMPLIFIERS - SMT
8
Pin Descriptions
Application Circuit
Components
Value
C1, C2
100pF
C3
10KpF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 235
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
Evaluation PCB
LOW NOISE AMPLIFIERS - SMT
8
List of Materials for Evaluation PCB 117160 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3 - J6
DC Pin
C1, C2
100 pF Capacitor, 0402 Pkg.
C3
10 KpF Capacitor, 0402 Pkg.
U1
HMC605LP3 / HMC605LP3E Amplifier
PCB [2]
117158 Evaluation Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
8 - 236
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC605LP3 / 605LP3E
v03.0809
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 2.3 - 2.7 GHz
8
LOW NOISE AMPLIFIERS - SMT
Notes:
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 237