HMC462
v02.0708
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
LOW NOISE AMPLIFIERS - CHIP
1
Typical Applications
Features
The HMC462 Wideband LNA is ideal for:
Noise Figure: 2 dB @ 10 GHz
• Telecom Infrastructure
Gain: 15 dB
• Microwave Radio & VSAT
P1dB Output Power: +15 dBm @ 10 GHz
• Military & Space
Self-Biased: +5V @ 63 mA
• Test Instrumentation
50 Ohm Matched Input/Output
• Fiber Optics
Die Size: 3.12 x 1.38 x 0.1 mm
Functional Diagram
General Description
The HMC462 is a GaAs MMIC PHEMT Low Noise
Distributed Amplifier die which operates between 2
and 20 GHz. The amplifier provides 15 dB of gain, 2.0
to 2.5 dB noise figure and +15 dBm of output power at
1 dB gain compression while requiring only 63 mA
from a single +5V supply. Gain flatness is excellent at
±0.5 dB from 6 - 18 GHz making the HMC462 ideal
for EW, ECM and RADAR applications. The HMC462
requires a single supply of +5V @ 63 mA and is the
self-biased version of the HMC463. The wideband
amplifier I/Os are internally matched to 50 Ohms
facilitating easy integration into Multi-Chip-Modules
(MCMs). All data is with the chip in a 50 Ohm test
fixture connected via 0.025mm (1 mil) diameter wire
bonds of minimal length 0.31mm (12 mils).
Electrical Specifi cations, TA = +25° C, Vdd= 5V
Parameter
Min.
Frequency Range
Gain
Max.
Min.
13.5
Typ.
Max.
Min.
6.0 - 18.0
15.5
13
Typ.
Max.
18.0 - 20.0
15
12
GHz
14
dB
±0.5
dB
±0.5
Gain Variation Over Temperature
0.015
0.025
0.015
0.025
0.015
0.025
dB/ °C
Noise Figure
3.0
4.0
2.5
3.5
3.0
3.7
dB
Input Return Loss
15
20
14
Output Return Loss
12
13
8
dB
12.5
dBm
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current
(Idd) (Vdd= 5V)
12.5
±0.5
Units
Gain Flatness
Output Power for 1 dB Compression (P1dB)
1 - 34
Typ.
2.0 - 6.0
15.5
11
14
9.5
dB
18
16
15.5
dBm
26.5
25.5
24
dBm
63
84
63
84
63
84
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
mA
HMC462
v02.0708
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
20
10
16
S21
S11
S22
-10
12
+25C
8
+85C
-40C
-20
4
-30
0
0
4
8
12
16
20
24
0
2
4
6
FREQUENCY (GHz)
8
10
Input Return Loss vs. Temperature
14
16
18
20
22
Output Return Loss vs. Temperature
0
0
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
12
FREQUENCY (GHz)
+25C
+85C
-40C
-10
-15
-20
+25C
+85C
-40C
-5
-10
LOW NOISE AMPLIFIERS - CHIP
20
0
1
Gain vs. Temperature
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
-15
-25
-30
-20
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
10
12
14
16
18
20
22
18
20
22
Noise Figure vs. Temperature
Reverse Isolation vs. Temperature
10
0
-10
+25C
+85C
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
8
FREQUENCY (GHz)
-40C
-20
-30
-40
+25C
+85C
-40C
6
4
2
-50
0
-60
0
2
4
6
8
10
12
14
FREQUENCY (GHz)
16
18
20
22
0
2
4
6
8
10
12
14
16
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 35
HMC462
v02.0708
Psat vs. Temperature
20
25
17
22
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature
14
11
+25C
+85C
-40C
8
+25C
+85C
-55C
19
16
13
5
10
0
2
4
6
8
10
12
14
16
18
20
22
0
2
4
6
FREQUENCY (GHz)
GAIN (dB), P1dB (dBm), NOISE FIGURE (dB)
30
IP3 (dBm)
27
24
+25C
+85C
-40C
18
15
0
2
4
6
8
10
12
10
12
14
16
18
22
14
16
18
20
22
20
74
16
70
12
66
8
62
Gain
P1dB
Noise Figure
4
Absolute Maximum Ratings
4.5
54
5
5.5
6
6.5
7
7.5
Vdd SUPPLY VOLTAGE (Vdc)
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+9 Vdc
Vdd (V)
Idd (mA)
RF Input Power (RFIN)(Vdd = +5.0 Vdc)
+9 dBm
+4.5
62
Channel Temperature
175 °C
Continuous Pdiss (T = 85 °C)
(derate 50 mW/°C above 85 °C)
4.5 W
Thermal Resistance
(channel to die bottom)
20 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
58
Idd
0
FREQUENCY (GHz)
+5.0
63
+5.5
64
+7.0
65
+7.5
66
+8.0
67
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
1 - 36
20
Gain, Power, Noise Figure & Supply
Current vs. Supply Voltage @ 10 GHz
Output IP3 vs. Temperature
21
8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8
Idd (mA)
LOW NOISE AMPLIFIERS - CHIP
1
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
HMC462
v02.0708
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
Die Packaging Information [1]
Standard
Alternate
GP-2
[2]
NOTES:
1. ALL DIMENSIONS IN INCHES [MILLIMETERS]
2. NO CONNECTION REQUIRED FOR UNLABELED BOND PADS
3. DIE THICKNESS IS 0.004 (0.100)
4. TYPICAL BOND PAD IS 0.004 (0.100) SQUARE
5. BACKSIDE METALLIZATION: GOLD
6. BACKSIDE METAL IS GROUND
7. BOND PAD METALIZATION: GOLD
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
LOW NOISE AMPLIFIERS - CHIP
1
Outline Drawing
Pad Descriptions
Pad Number
Function
Description
1
RFIN
This pad is AC coupled and matched to 50 Ohms.
2
Vdd
Power supply voltage for the amplifier.
External bypass capacitors are required
3
RFOUT
This pad is AC coupled and matched to 50 Ohms.
Die
Bottom
GND
Die bottom must be connected to RF/DC ground.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 37
HMC462
v02.0708
Assembly Diagram
LOW NOISE AMPLIFIERS - CHIP
1
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
1 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC462
GaAs PHEMT MMIC
LOW NOISE AMPLIFIER, 2 - 20 GHz
1
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina
thin film substrates are recommended for bringing RF to and from the chip
(Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be
used, the die should be raised 0.150mm (6 mils) so that the surface of
the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil)
thick molybdenum heat spreader (moly-tab) which is then attached to the
ground plane (Figure 2).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Microstrip substrates should brought as close to the die as possible in
order to minimize bond wire length. Typical die-to-substrate spacing is
0.076mm to 0.152 mm (3 to 6 mils).
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
Figure 1.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment.
Once the sealed ESD protective bag has been opened, all die should be
stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt
to clean the chip using liquid cleaning systems.
Static Sensitivity:
strikes.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
0.076mm
(0.003”)
RF Ground Plane
Follow ESD precautions to protect against ESD
Transients: Suppress instrument and bias supply transients while bias
is applied. Use shielded signal and bias cables to minimize inductive
pick-up.
LOW NOISE AMPLIFIERS - CHIP
v02.0708
0.150mm (0.005”) Thick
Moly Tab
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
Figure 2.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The
surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy.
The mounting surface should be clean and flat.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool
temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO
NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of
scrubbing should be required for attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage
temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on
the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31mm (12 mils).
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 - 39