MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Main Features
Product Description
MECGaNTRSX is a 0.25µm GaN
HEMT
Transmit/Receive
Switch
designed and tested by MEC for XBand applications.
In the frequency range from 8 GHz to
11.5 GHz MECGaNTRSX provides less
than 1.1 dB of small signal insertion
loss, more than 28 dB of isolation, and
less than 1.5 dB of insertion loss at 40
dBm of input power in transmit mode.
 0.25µm GaN HEMT Technology
 8– 11.5 GHz full performance Frequency
Range
 Rx Small Signal Insertion Loss < 1.1 dB
 Tx Small Signal Insertion Loss < 1 dB
 Tx P1dB = 43 dBm
 Tx Insertion Loss @ Pin=40 dBm < 1.5 dB
 Input Power Handling = 46 dBm
 Isolation Tx-Rx > 28 dB
 Return Loss > 12 dB
 Tx absorptive port
 Rx reflective port
 Control Voltage: Vc = 0/ -30V
 Chip Size: 3.00 x 1.00 x 0.10 mm3
Typical Applications
 Commercial and Military Radar
 Communications
 Test Instrumentation
Measured Data
The
Tx
input
port
of
MECGaNTRSX is Absorptive.
the
T = 25 degC - CW
0
Ins. Loss
Mag. of S-Parameters (dB)
-5
-10
S22 (Rx)
-15
-20
S22 (Tx)
-25
-30
S11 (Rx)
Isolation (Tx)
-35
S11 (Tx)
-40
-45
7.0
- 1/7 -
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
Frequency [GHz]
Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.
12.0
MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Main Characteristics - Rx Mode
Test Conditions: Tbase_plate = 25°C (Vc1 = -30 V, Vc2 = -0 V) - CW
Parameter
Min
Max
Unit
8
11.5
GHz
Small Signal Insertion Loss
0.8
1.1
dB
Isolation Tx-Rx
20
35
dB
Input Return Loss (Ant)
15
22
dB
Output Return Loss (Rx)
12
21
dB
Return Loss @ Tx port (Absorptive)
5
15
dB
Gate Control Voltage Vc1
-30
-25
V
Gate Control Voltage Vc2
0
1
V
0.5
mA
Operating frequency
Typ
Control Current
Main Characteristics - Tx Mode
Test Conditions: Tbase_plate = 25°C (Vc1 = 0 V, Vc2 = -30 V) - Pulsed
Parameter
Min
Max
Unit
8
11.5
GHz
Small Signal Insertion Loss
0.8
1
dB
Isolation Tx-Rx
28
33
dB
Input Return Loss (Tx)
17
40
dB
Output Return Loss (Ant)
17
32
dB
Operating frequency
Typ
Return Loss @ Rx port (Reflective)
4
dB
Pin - 1 dB
43
dBm
Insertion Loss @ Pin=40 dBm
1.3
dB
Input Power Handling
46
dBm
Gate Control Voltage Vc1
0
1
V
Gate Control Voltage Vc2
-30
-25
V
0.5
mA
Control Current
- 2/7 Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.
MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Receive Mode: Insertion Loss, Isolation and Return Loss
Test Conditions: Tbase_plate = 25°C , Vc1 = -30 V, Vc2 = 0 V - CW
0.0
-1.0
Mag. of Isolation (dB)
Mag. of Insertion Loss (dB)
-0.5
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-4.5
-5.0
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
7.0
12.0
7.5
8.0
8.5
S22
S11
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
Mag. of Return Loss @ Tx Absorptive Port (dB)
Mag. of S11 and S22 (dB)
Frequency [GHz]
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
-22
-24
-26
-28
-30
9.0
9.5
10.0
10.5
11.0
11.5
12.0
10.5
11.0
11.5
12.0
Frequency [GHz]
Frequency [GHz]
0
-5
-10
-15
-20
-25
-30
-35
-40
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Frequency [GHz]
- 3/7 Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.
MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Transmit Mode: Insertion Loss, Isolation and Return Loss
Test Conditions: Tbase_plate = 25°C , Vc1 = 0 V, Vc2 = -30 V - CW
0
-0.5
-5
-1.0
-10
Mag. of Isolation (dB)
Mag. of Insertion Loss (dB)
0.0
-1.5
-2.0
-2.5
-3.0
-3.5
-4.0
-15
-20
-25
-30
-35
-40
-4.5
-5.0
-45
7.0
7.5
8.0
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12.0
7.0
7.5
8.0
8.5
Frequency [GHz]
Mag. of S11, S22 (dB)
-5
-10
-15
S22
-25
-30
-35
S11
-40
-45
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Frequency [GHz]
10.5
11.0
11.5
12.0
Mag. of Return Loss @ Rx Reflective Port (dB)
0
-20
9.0
9.5
10.0
10.5
11.0
11.5
12.0
10.5
11.0
11.5
12.0
Frequency [GHz]
0
-2
-4
-6
-8
-10
-12
-14
-16
-18
-20
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Frequency [GHz]
- 4/7 Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.
MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Transmit Mode Nonlinear Measurement: Insertion Loss
0.0
3.00
-0.5
2.50
Insertion Loss [dB]
Gain [dB]
Test Conditions: Tbase_plate = 25°C , Vc1 = 0 V, Vc2 = -30 V - Pulsed
-1.0
-1.5
Freq=9.6GHz
-2.0
Freq=9.0GHz
-2.5
2.00
1.50
1.00
Pin=42dBm
0.50
Freq=10.2GHz
-3.0
0.00
34.0
35.0
36.0
37.0
38.0
39.0
40.0
41.0
42.0
43.0
8.6
Pin [dBm]
8.8
9
9.2
9.4
9.6
9.8
10
10.2
Frequency [GHz]
Function Table
RF path
State
Vc1
Vc2
Antenna to Rx
Receive
-30 V
0V
Tx to Antenna
Transmit
0V
-30 V
- 5/7 Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.
MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Bond Pad Configuration & Assembly Recommendations
Vc1
Vc2
Bond Pad #
Connection
Rx, Tx and
Antenna
2 Bonding Wires
L_bond = 0.3nH
Vc1, Vc2
L_bond ≤ 1 nH
External
Components
No external
components required
(Internal Series
Resistance: Rs=4kΩ)
Eutectic Die bond using AuSn
(80/20) solder is recommended.
The backside of the die is the
Source (ground) contact.
Pad #
Dim.
Connection
RX
100x150 µm²
RF Rx Out CSG pitch 150 µm
TX
100x150 µm²
RF Tx In CSG pitch 150 µm
Antenna
100x150 µm²
RF Antenna pitch 150 µm
Vc1, Vc2
100x100 µm²
DC Control Voltage
Thermosonic ball or wedge
bonding are the preferred
connection methods.
Gold wire must be used for
connections.
Bias Procedure
Bias-Up
Bias-Down
1. Vc1 and Vc2 sets to Control Voltage.
2. Apply RF signal.
1. Turn off RF signal.
2. Turn off Vc1, Vc2.
- 6/7 Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.
MECGaNTRSX
X-Band GaN HEMT TxRx Absorptive Switch
Contact Information
For additional technical Information and Requirements:
Email: contact.mec@mec-mmic.com
Tel: +39 0516333403
For sales Information and Requirements:
Email: sales@mec-mmic.com
Tel: +39 0637511124
Notice
The furbished information is believed to be reliable. However, performances and specifications contained herein
are based on preliminary characterizations and then susceptible to possible variations. On the basis of customer
requirements the product can be tested and characterized in specific operating conditions and, if needed, tuned to
meet custom specifications.
The contents of this document are under the copyright of MEC srl. It is released by MEC srl on condition that it
shall not be copied in whole, in part or otherwise reproduced (whether by photographic, reprographic, or any other
method) and the contents thereof shall not be divulged to any person other than inside the company at which has
been provided by MEC.
- 7/7 Preliminary Data Sheet
MEC – Microwave Electronics for Communications
www.mec-mmic.com
Rev.AB 07/05/15
25/01/13
Rev.