Ultra Large & Broadband Silicon Capacitors
for
Optical Communication Systems
UBSC 60 GHz+ / ULSC 20 GHz
UBEC 60 GHz+ / ULEC 20 GHz
UWSC 26 GHz
IPDiA Ultra Broadband Silicon Capacitors – Introduction
IPDiA Ultra Broadband Silicon Capacitors for Optical communication applications
UBB Series Introduction
IPDiA Ultra Broadband product line targets optical
communication systems (ROSA/TOSA, SONET and all
optoelectronics) as well as high speed data systems or
products. UBB products are designed for DC blocking,
feedback, coupling and bypass grounding applications.
The unique technology of integrated passive devices in
silicon developed by IPDiA, offers low insertion loss, low
reflection and high phase stability from 16 kHz up to 60+
GHz for the UBSC/UBEC and up to 20+ GHz for the
ULSC/ULEC, and high rejection higher than 26GHz for
the UWSC according to capacitance value. These deep
trench silicon capacitors have been developed with a
semiconductor MOS process.
All UBB products are RoHS-compliant and lead-free.
Fig. 1: Cross section of IPDiA Capacitor
Key Parameters
The purity of the oxide cured at a temperature of 900°C during the manufacturing process plays a major
role on the Ultra Broadband Si Cap characteristics and leads to superior:
• Repeatability
• Reliability
• Stability over temperature
• Stability over DC voltage
• Limited ageing
• Insulation resistance
Moreover, the Silicon substrate brings lower dielectric absorption and low to zero piezo effect .
For example:
 our UBSC 100 nF/0402 SiCap is made of 270 elementary cells of 370 pF distributed over the chip,
combined with a 25pF Metal Insulator Metal (MIM) capacitor in parallel to maintain a flat broadband
frequency response.
 our UWSC 10 nF/0303 SiCap combines ultra-deep trench MOS capacitors for high capacitance value of
10 nF (35 elementary cells of 280 pF distributed over the chip), combined with a single layer MOS
capacitors for low capacitance value of 100 pF, both in a 0303 package size, to maintain a flat
broadband frequency response.
All these features in the TIME DOMAIN:
In the FREQUENCY DOMAIN:
• Minimize the rise and fall times
• Maximize the eye opening
• Neutralize the jitter
• Ensure a flat frequency response with
no resonance or phase discontinuity
• Minimize the attenuation
• Minimize the reflection
Eye Diagram Analysis and Comparison between a ‘Through’ and a Silicon Broadband
Fig. 3: Fourier series
Fig. 2: Typical Set up for Eye Pattern Measurements
No signal degradation !
Fig. 4: UBSC SiCap eye diagram
Rev. 1.0
2
IPDiA Ultra Broadband Silicon Capacitors – Introduction
Fig. 5: Capacitance variation versus operating
temperature (for UBSC and MLCC technologies)
Fig. 6: Capacitance variation versus DC biasing
(for UBSC and MLCC technologies)
Fig. 7: Projected capacitor failure rate in 10 years
at 85°C and 50% of the rating voltage (depending
on UBSC, tantalum and MLCC technology)
Rev. 1.0
3
IPDiA Ultra Broadband Silicon Capacitors – Introduction
The UBB product line is composed of 3 series:
- UBSC/ULSC – 60+GHz Ultra Broadband Silicon Capacitors – Surface Mounted
- UBEC/ULEC – 60+GHz Ultra Broadband Embedding silicon Capacitor – Wire Bondable
- UWSC – Ultra large-band Wire bonding Silicon Capacitor – Wire Bondable Vertical
UBSC/ULSC Key Features
UBEC/ULEC Key Features
 Ultra broadband performance up
to 60 GHz
 Low insertion with a flat frequency
response
 Resonance free
 Excellent return loss
 No phase discontinuity
 Ultra high stability of capacitance value:
 Ultra broadband performance up
to 60 GHz
 High rejection
 Low ESR and ESL
 Ultra high stability of capacitance value:
- Temperature <0±24 ppm/°C
(-55°C to +150°C)
- DC voltage < 0.1 %/V (From 0 V to RVDC
- Negligible aging < 0.001 %/1000 hours
- Temperature <0±24 ppm/°C
(-55°C to +150°C)
- DC voltage < 0.1 %/V (From 0 V to RVDC )
- Negligible aging < 0.001 %/1000 hours
- Capacitance value stable even at 16 kHz
)
 Compatible with standard wire bonding
assembly (ball and wedge)
 Suitable for lead free reflow-soldering
UWSC Key Features




Ultra large-band performance
High rejection
Ultra low ESR and ESL
Ultra high stability of capacitance value:
- Temperature <0±24 ppm/°C
(-55°C to +150°C)
- DC voltage < 0.02 %/V (From 0V to RVDC
- Negligible aging < 0.001 %/1000 hours
)
 Compatible with standard wire bonding
assembly (ball and wedge)
Key Applications
General Key Features
 Optoelectronics/high-speed data.
 Trans-Impedance Amplifiers (TIA).
 Receive-and-transmit optical subassembly (ROSA/TOSA).
 Synchronous optical networking (SONET).
 High speed digital logic.
 Broadband test equipment.
 Broadband microwave/millimeter wave.
 Replacement of X7R and NP0.
 Downsizing.
 Low profile application: 400 µm for UBSC/
ULSC, 250 µm for UBEC/ULEC/UWSC or
100 µm on request.
 Lower dielectric absorption (0.1%)
compared with NP0/X7R.
 No AC distortion due to low-to zero piezo
effect.
 High reliability (FIT < 0.017 parts/billion
hours) exceeding X7R ceramics by a
factor of 10.
Rev. 1.0
4
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
UBSC 60 GHz + / ULSC 20 GHz - General Description
UBSC/ULSC Capacitor targets Optical communication system such as ROSA/TOSA, SONET and all
optoelectronics as well as High speed data system or products. The UBSC/ULSC is suitable for DC
blocking, feedback, coupling and bypassing applications in all broadband optoelectronics and High speed
data systems. The unique technology of integrated passive device in silicon, developed by IPDiA, offers
unique performances with low insertion loss, low reflection and phase stability from 16 kHz to 60+ GHz for
the UBSC and to 20 GHz for the ULSC. These capacitors in ultra-deep trenches in silicon have been
developed in a semiconductor process, in order to integrate trench MOS capacitors providing a high
capacitance value of 100 nF in a SMT 0402. The UBSC capacitor provides very high stability of the
capacitance over temperature, voltage variation as well as a very high reliability. UBSC capacitors have an
extended operating temperature ranging from -55°C to 150°C, with very low capacitance change over
temperature (+/- 0.5%). Standard form factor are 0201, 0402 & 0603 with values range covers from 10 nF
to 100 nF.
Assembly: Please refer to our assembly recommendations p. 13.
Pad finishing: nickel/gold electroless (ENIG). Other types of finishing are available on request (Aluminum,
thin copper, lead-free nickel solder coating such as SAC305 or thin gold).
For any custom capacitance values and other package sizes please feel free to contact us.
1
Ultra-deep trench
MOS capacitors
2
for high capacitance
Single layer
MOS capacitors
for low capacitance
Fig. 8: UBSC/ULSC capacitor soldered on
board
Fig. 9: UBSC/ULSC capacitor
block diagram (2 connections)
UBSC 60 GHz + / ULSC 20 GHz - Standard Electrical Performances
In accordance with the Absolute Maximum Rating System (IEC 60134)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
CP
Capacitance tolerance
-15
-
TOP
Operating temperature
-55
20
150
°C
TSTG
Storage temperature
-70
-
165
°C
CT
Capacitance temperature variation
-55 °C to 150 °C
-24
0
+24
ppm/°C
CRVDC
Capacitance voltage variation
From 0 V to RVDC
-
-
0.1
%/VDC
(**)
-
-
kV
10
-
GΩ
ESDHBM
ESD testing > 2kV HBM stresses
IR
Insulation resistor
GQS, SNW-FQ- 302A
2
-
(*)
+15
%
Table 1: UBSC/ULSC standard electrical performances
(*) Other capacitance tolerances upon request
(**) for capacitance value, higher than 47 pF
Rev. 1.0
5
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
100 nF – 0402 – BV11 UBSC capacitor
Fig. 10: S21 phase vs. DC voltage
(frequency response in transmission mode)
Fig. 11: S21 module vs. DC voltage
(frequency response in transmission mode)
Fig. 12: S21 module vs. Temp.
(frequency response in transmission mode)
Fig. 13: Insertion loss variation @ 16kHz for SiCap &
X5R MLCC (100 nF nom. capacitance value, 85°C, 3
VDC & 1.5 Vrms)
UBSC 60 GHz + / ULSC 20 GHz - Specific Electrical Performances (Typical value)
P/N
Min break
down
voltage (V)
935 151 423 510
11
935 151 723 510
30
935 151 424 610
11
935 155 425 610
11
Nom. Rated
voltage
(VDC)
3.6(**)
5(***)
10(**)
13.6(***)
3.6(**)
5(***)
3.6(**)
5(***)
IL
(dB)
IL
(dB)
IL
(dB)
@ 20 GHz
@ 40 GHz
@ 60 GHz
0201
0.4
0.3
1
14
10
0201
0.2
0.3
0.8
15
100
0402
0.2
0.2
0.7
18
100
0603
0.4
/
/
15
Capacitance
value (nF)
Case size
10
RL
(dB)
Table 2: UBSC/ULSC specific electrical performances
(**) 60 years of intrinsic life time predictions with nominal dielectric thickness at 100°C
(***) 10 years of intrinsic life time predictions at 100°C
Rev. 1.0
6
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
UBSC 60 GHz + / ULSC 20 GHz - Frequency Response(*)
100 nF – 0402 – BV11 UBSC capacitor
UBSC424.610
50Ω
50Ω
Fig. 14: 100 nF/0402/BV11— P/N: 935 151 424 610 frequency response in transmission
mode (red curve: gain & blue curve: return loss)
10 nF – 0201 – BV11 UBSC capacitor
UBSC423.510
50Ω
50Ω
Fig. 15: 10 nF/0201/BV11— P/N: 935 151 423 510 frequency response in transmission
mode (red curve: gain & blue curve: return loss)
Rev. 1.0
7
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
10 nF – 0201 – BV30 UBSC capacitor
UBSC723.510
50Ω
50Ω
Fig. 16: 10 nF/0201/BV30— P/N: 935 151 723 510 frequency response in transmission
mode (red curve: gain & blue curve: return loss)
100 nF – 0603 – BV11 ULSC capacitor
ULSC425.610
50Ω
50Ω
Fig. 17: 100 nF/0603/BV11— P/N: 935 155 425 610 frequency response in transmission
mode (red curve: gain & blue curve: return loss)
(*)
The measurement results are only valid for the described test set up. Other configurations will lead to different results.
UBSC/0402 datasheet test condition description:
IPDiA testing to 60+ GHz performed on 10-mils Rogers 4350B. Nominal Pad dimensions – pad length = 0.476 mm, pad width and line
width = 0.551mm, pad gap = 0.246 mm (nominal 50 ohm characteristic impedance).
UBSC/0201 datasheet test condition description:
IPDiA testing to 60+ GHz performed on 6.6-mils Rogers 4350B. Nominal Pad dimensions – pad length = 0.150 mm, pad width and line
width = 0.400mm, pad gap = 0.300 mm (nominal 50 ohm characteristic impedance).
ULSC/0603 datasheet test condition description:
IPDIA testing to 20 GHz performed on 10-mils Rogers 4350B. Nominal Pad dimensions – pad length = 0.50 mm, pad width = 0.90
mm, pad gap = 0.80 mm.
FREE S-Parameters-Based Linear Simulation Models for ADS: http://www.modelithics.com/mvpIpdia.asp
Rev. 1.0
8
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
UBSC 60 GHz + / ULSC 20 GHz - Component Dimensions
( µm )
C0201M
C0201
C0402
C0603
C0805
C1206
C1812
IPD pad dimensions
a
b
c
100
150
200
150
400
300
300
500
400
400
900
800
500
1 200
1 000
600
1 600
2 000
900
3 400
2 700
L
600
800
1 200
1 800
2 200
3 400
4 700
IPD size
W
T
300
600
400
700
(standard
1 100 profile) or
1 400 100 (low
profile)
1 800
3 600
W
L
c
a
T
b
Table 3: UBSC/ULSC component dimensions
For landing pad dimensions on your PCB layout, please refer to the assembly chapter.
Package Outline and Orientation Mark
The UBSC/ULSC capacitor is delivered as a bare die, with opening for contacts.
Die name
Fig. 18: Microphotograph of a 100 nF/0402 UBSC capacitor
UBSC 60 GHz + / ULSC 20 GHz - Capacitance Range
Available parts
For other values, contact your IPDiA sales representative
Rev. 1.0
9
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
UBSC 60 GHz + / ULSC 20 GHz - Global Part Number Information
Example of a 100 nF – 0402 UBSC capacitor delivered in a 1000 unit Tape and Reel
935.151.4.2.4.6.10-T3N
T
BV
S
Type / Thickness
935.151 = UBSC
thickness 400 µm
935.152 = UBSC
thickness 100 µm
935.155 = ULSC
thickness 400 µm
935.156 = ULSC
thickness 100 µm
Breakdown Voltage
4 = 11 V
7 = 30 V
Size
2 = 1005
3 = 0201
4 = 0402
5 = 0603
6 = 0805
7 = 1206
9 = 1812
.
.
U
.
0 = 10f
1 = 0.1p
2 = 1p
3 = 10p
4 = 0.1n
Unit
5 = 1n
6 = 10n
7 = 0.1µ
8 = 1µ
9 = 10µ
XX
.
PK / F
Value
10
15
22
33
47
68
-
Packing / Finishing
W0: 2" x 2" waffle pack
F1: 6” film frame carrier
T3: T&R 1 000 units
T4: T&R 10 000 units
T5: T&R 5 000 units
Finishing
N: ENIG (Ni/Au electroless)
S: SAC305 bump
UBSC 60 GHz + / ULSC 20 GHz - Available Parts
Case
Size
S2P files
935 151 423 510
Surface mount Ultra Broad Band Silicon Capacitor, from
-55 to 150°C, 60+GHz with ENIG termination
Ultra Broadband Si Cap 10 nF 60+ GHz 400 µm, BV>11 V 400 µm
C0201
Yes(*)
935 152 423 510
Ultra Broadband Si Cap 10 nF 60+ GHz 100 µm, BV>11 V 100 µm
C0201
Yes(*)
935 151 723 510
Ultra Broadband Si Cap 10 nF 60+ GHz 400 µm, BV>30 V 400 µm
C0201
Yes(*)
935 152 723 510
Ultra Broadband Si Cap 10 nF 60+ GHz 100 µm, BV>30 V 100 µm
C0201
Yes(*)
935 151 424 610
935 152 424 610
Ultra Broadband Si Cap 100 nF 60+ GHz 400 µm, BV>11 V 400 µm
Ultra Broadband Si Cap 100 nF 60+ GHz 100 µm, BV>11 V 100 µm
C0402
C0402
Yes(*)
Yes(*)
Case
Size
S2P files
935 155 424 610
Surface mount Ultra Large Band Silicon Capacitor, from
-55 to 150°C, 20 GHz with ENIG termination
Ultra Large band Si Cap 100 nF 20 GHz 400 µm, BV>11 V 400 µm
C0402
Yes(*)
935 156 424 610
Ultra Large band Si Cap 100 nF 20 GHz 100 µm, BV>11 V 100 µm
C0402
Yes(*)
935 155 425 610
935 156 425 610
Ultra Large band Si Cap 100 nF 20 GHz 400 µm, BV>11 V 400 µm
Ultra Large band Si Cap 100 nF 20 GHz 100 µm, BV>11 V 100 µm
C0603
C0603
Yes(*)
Yes(*)
Part number
UBSC.xxx
Part number
ULSC.xxx
Product description
Product description
Thickness
Thickness
Table 4: UBSC/ULSC part numbers
(*)
FREE S-Parameters-Based Linear Simulation Models for ADS: http://www.modelithics.com/mvpIpdia.asp.
Rev. 1.0
10
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
UBSC 60 GHz + / ULSC 20 GHz - Packing Format
Tape and Reel format definition:
Case size
(Thickness)
C0201M
(100 µm)
C0201
(100 µm)
C0201
(400 µm)
C0402
(100 µm)
C0402
(400 µm)
C0603
(100 µm)
C0603
(400 µm)
Ao
Bo
Ko
Carrier
Tape
width
TBD
-
-
-
8 mm
2 mm
7”
1 000
-
0.793 mm
0.959 mm
0.26 mm
8 mm
4 mm
7”
1 000
BD0050 x
0100
0.65 mm
1.14 mm
0.56 mm
8 mm
4 mm
7”
1 000
LO-691
0.9 mm
1.31 mm
0.33 mm
8 mm
4 mm
7”
1 000
AAB012-A
0.79 mm
1.31 mm
0.5 mm
8 mm
4 mm
7”
1 000
LO-534
1.23 mm
2.19 mm
0.44 mm
8 mm
4 mm
7”
1 000
BDO 100 x
170
1.3 mm
2.0 mm
0.64 mm
8 mm
4 mm
7”
1 000
Cavity dimensions
Tape Ref
Carrier
Tape
pitch
Reel size
Qty per
reel
Table 5: Tape & Reel references
Width
Pitch
Fig. 19: Tape & Reel dimensions
Tape Width
8 mm
A
Diameter
178 mm +/- 1.0
Fig. 20: Die orientation (flip) within the carrier (Pocket)
related to tape and reel orientation
C
13.5 mm ± 0.5
D
(min)
20.2 mm
N
Hub
60 mm + 0.1 -0.0
W1
93 mm ± 0.5
W2
(max)
11.5
Table 6: Reel references used for tape width 8 mm
Fig. 21: Reel references and dimensions used for tape width 8 mm
Rev. 1.0
11
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
Film frame carrier format definition: Ref. FF070 (Perfection products)
Wafer
diameter
Frame
type
Inside
diameter
(A)
7.639”
(***)
6.0” (150 mm)
Type A
Outside
diameter
(B)
8.976”
Width
(C)
8.346”
Thickness
(D)
Pin
location
(E)
Pin
location
(F)
Frame
style
Weight
(lbs)
(stainless)
0.048
2.370”
2.500”
DTF-2-6-1
0.21
Table 7: Details of film frame carrier
(***)
other size and type on request. Like FF108 and F123 frame type A
respectively for 8” and 12” wafer diameter.
Fig. 22: Dimensions of film frame carrier
Waffle pack format definition: (Entegris product)
Pocket details
Case size
(thickness)
Waffle Ref
C0201M
TBD
C0201
TBD
C0402
(400 µm)
C0603
(400 µm)
H20-052040
-66C02
H20-055078
-66C02
X
±0.05 mm
Y
±0.05 mm
Z
±0.05 mm
A
±0.5°
1.32
1.02
0.61
7°
1.02
5°
1.40 8a: Details 1.98
Table
of waffle pack
Max Qty /
waffle
20 x 20
(400)
15 x 15
(195)
Overall tray size
Size
Height
Flatness
50.8 mm
±0.10 mm
3.96 mm
+0.05 -0.08
0.1 mm
Table 8b: Details of waffle pack
Fig. 22: Dimensions of waffle pack
The die orientation (flipped) within the pocket is related to the waffle pack orientation.
Rev. 1.0
12
IPDiA Capacitors – UBSC/ULSC Series - Surface Mounted
Assembly by Soldering
The attachment techniques recommended by IPDiA for the UBSC/ULSC capacitors on the customers
substrates are fully detailed in specific documents available on our website. To assure the correct use and
proper functioning of IPDiA capacitors please download the assembly instructions on
www.ipdia.com/assembly and read them carefully.
For UBSC/ULSC assembly
instructions @ 100 µm, please go to
ww w. i p d i a .c om /as s em b l y a n d
download the pdf file called ‘UBSC/
ULSC 100 µm Capacitors Assembly by Soldering’
For UBSC/ULSC assembly
instructions @ 400 µm, please go to
ww w. i p d i a .c om /as s em b l y a n d
download the pdf file called ‘UBSC/
ULSC 400 µm Capacitors Assembly by Soldering’
Rev. 1.0
13
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
UBEC 60 GHz + / ULEC 20 GHz - General Description
UBEC / ULEC Capacitor targets Optical communication systems such as ROSA/TOSA, SONET and all
optoelectronics as well as High speed data systems or products. The UBEC / ULEC is suitable for DC
blocking, feedback, coupling and bypassing applications in all broadband optoelectronics and High speed
data systems. The unique technology of integrated passive devices in silicon, developed by IPDiA, offers
unique performances with low insertion loss, low reflection and phase stability from 16 kHz to 60+ GHz for
the UBEC and to 20 GHz for the ULEC. These capacitors in ultra-deep trenches in silicon have been
developed in a semiconductor process, in order to integrate trench MOS capacitors providing a high
capacitance value of 100 nF in a SMT 0404. The UBEC/ULEC capacitor provides very high stability of the
capacitance over temperature, voltage variation as well as very high reliability. UBEC/ULEC capacitors
have an extended operating temperature ranging from -55°C to 150°C, with very low capacitance change
over temperature (0+/- 24 ppm/°C).
Assembly: Please refer to our assembly recommendations p. 20.
Pad finishing: 3 µm Aluminum (Al/Si/Cu: 98.96%/1%/0.04%), other types of top finishing are available on
request such as Ti (0.2 µm) / Cu (3.4 µm) / Ni (3 µm) / Au (1.5 µm) for wire bonding. Other types of
finishing are available on request such as thin copper for embedding, electroless nickel/gold (ENIG) for flipchipping compatible with lead free reflow soldering process.
For any custom capacitance values and other package sizes please feel free to contact us.
1
Ultra-deep trench
MOS capacitors
for high capacitance
2
Single layer
MOS capacitors
for low capacitance
Fig. 25: UBEC/ULEC capacitor
block diagram (2 connections)
Fig. 24: UBEC/ULEC capacitor soldered
on board
UBEC 60 GHz + / ULEC 20 GHz - Standard Electrical Performances
In accordance with the Absolute Maximum Rating System (IEC 60134)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
CP
Capacitance tolerance
-15
-
TOP
Operating temperature
-55
20
150
°C
TSTG
Storage temperature
-70
-
165
°C
CT
Capacitance temperature variation
-24
0
+24
ppm/◦C
CRVDC
Capacitance voltage variation
-
-
0.1
%/VDC
ESDHBM
ESD testing > 2kV HBM stresses
2(**)
-
-
kV
IR
Insulation resistor
-
10
-
GΩ
-55 °C to 150 °C
From 0 V to
RVDC
GQS, SNW-FQ302A
(*)
+15
%
Table 9: UBEC/ULEC standard electrical performances
(*) Other capacitance tolerances upon request
(**) for capacitance value, higher than 47 pF
Rev. 1.0
14
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
UBEC 60 GHz + / ULEC 20 GHz - Specific Electrical Performances (Typical value)
P/N
Min break
down voltage
(V)
Nom. Rated
voltage (VDC)
Capacitance
value (nF)
Case size
ESL
(pH)
@SRF
ESR
(mohms)
@SRF
935 157 42F 610
11
3.6(**)
5(***)
100
E0404
50
200
Table 10: UBEC/ULEC specific electrical performances
(**) 60 years of intrinsic life time predictions with nominal dielectric thickness at 100°C.
(***) 10 years of intrinsic life time predictions at 100°C
UBEC 60 GHz + / ULEC 20 GHz - Frequency Response(*)
100nF – 0404– BV11 ULEC capacitor
ULEC42F.610
50Ω
50Ω
Fig. 26: 100nF/0404/BV11— P/N: 935 158 42F 610 frequency response in transmission
mode (red curve: gain & blue curve: return loss)
Fig. 27: 100nF/0404/BV11— P/N: 935 158 42F 610
frequency response of impedance in transmission mode
(*)
The measurement results are only valid for the described test set-up. Other configurations will lead to different results.
ULEC/0404 datasheet test condition description (flip-chipped assembly mode):
IPDiA testing to 20 GHz performed on 25-mils ceramic substrate (εr=9.9) used in coplanar mode. Nominal Pad dimensions – pad
length = 0.152 mm, pad width= 0.892 mm and line width = 0.085mm, pad gap = 0.548 mm (nominal 50 ohm characteristic
impedance).
Rev. 1.0
15
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
UBEC 60 GHz + / ULEC 20 GHz - Component Dimensions
Case size (typ. ±0.01mm)
Pad dimension
(mm)
d
or
a/b
E0201M(*) 0.1 / 0.15
S
L
W
0.2
0.6
0.3
E0202
0.15
0.15
0.62
0.62
E0302
0.15
0.42 / 0.15
0.89
0.62
E0404
0.15
0.57
1.06
1.06
E0505
0.15
0.81
1.29
1.29
T
0.10
(low profile)
W
W
L
L
s
s
a
T
d
T
b
For landing pad dimensions on your PCB layout, please refer to the assembly chapter.
Package Outline and Orientation Mark
The UBEC / ULEC capacitor is delivered as a bare die, with opening for contacts.
Die name
Fig 28: Microphotograph of a 100 nF/0404 UBEC capacitor
UBEC 60 GHz + / ULEC 20 GHz - Capacitance Range
Available parts—For other values, contact
your IPDiA sales representative
Rev. 1.0
16
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
UBEC 60 GHz + / ULEC 20 GHz - Global Part Number Information
Example of a 100 nF – 0404 capacitor delivered in a 1000 unit Tape and Reel
935.157.4.2.F.6.10-T3A
T
BV
Type
935.157 = UBEC
thickness 100 µm
935.158 = ULEC
thickness 100 µm
Breakdown voltage
4 = 11 V
7 = 30 V
.
S
U
Size
.
C = 0202
I = 0302
F = 0404
H = 0505
S =1208
V =1216
V = 1612
Y = 1616
X =2016
.
0 = 10f
1 = 0.1p
2 = 1p
3 = 10p
4 = 0.1n
Unit
5 = 1n
6 = 10n
7 = 0.1µ
8 = 1µ
9 = 10µ
XX
.
Value
10
15
22
33
47
68
PK / F
-
Packing
W0: 2" x 2" waffle pack
F1: 6” film frame carrier
T3: T&R 1 000 units
T4: T&R 10 000 units
T5: T&R 5 000 units
Finishing
A: 3 µm Al (Al/Si/Cu:
98.96%/1%/0;.04%)
O: electroplated
TiCuNiAu (Ti:0.2 µm;
Cu:3.4 µm; Ni :3 µm;
Au:1.5 µm)
UBEC 60 GHz + / ULEC 20 GHz - Available Parts
Part number
UBEC.xxx
935 157 42F 610
Part number
ULEC.xxx
935 158 42F 610
Product description
Thickness
Case
Size
S2P files
100 µm
E0404
Yes(*)
Thickness
Case
Size
S2P files
100 µm
E0404
Yes(*)
Ultra Broadband Embedding/wire bonding Si Cap, from
-55°C to 150°C, 60 GHz with Alu termination
Ultra Broadband Embedding/wire bonding Si Cap 100 nF,
60 GHz, BV>11 V
Product description
Ultra Large band Embedding/Wire bonding Si Cap, from
-55°C to 150°C, 20 GHz with Alu termination
Ultra Large band Embedding/wire bonding Si Cap 100 nF,
20 GHz, BV>11 V
Table 11: UBEC/ULEC part numbers
(*)
FREE S-Parameters-Based Linear Simulation Models for ADS: http://www.modelithics.com/mvpIpdia.asp.
Rev. 1.0
17
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
UBEC 60 GHz + / ULEC 20 GHz - Packing Format
Tape and Reel format definition:
Carrier
Tape
width
Carrier
Tape
pitch
Reel size
Qty per
reel
tbd
8 mm
4 mm
7”
1 000
E0202
tbd
8 mm
4 mm
7”
1 000
E0404
BDO120X120
1.20
1.20
0.47
8 mm
4 mm
7”
1 000
E0505
LO-560
1.48
1.58
0.31
8 mm
4 mm
7”
1 000
Case size
Tape Ref
E0201M
Cavity dimensions
Ao
Bo
Ko
Table 12: Tape & Reel references
Width
Pitch
Fig. 29: Tape & Reel dimensions
Fig. 30: Die orientation (No flip) within the carrier
(Pocket) related to tape and reel orientation
Tape width
8 mm
A
Diameter
178 mm
+/- 1.0
C
13.5 mm
± 0.5
D
(min)
20.2 mm
N
Hub
60 mm
+ 0.1 -0.0
W1
93 mm
± 0.5
W2
(max)
11.5
Table 13: Reel references used for tape width 8 mm
Fig. 31: Reel references and dimensions used for tape width 8 mm
Rev. 1.0
18
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
Film frame carrier format definition: Ref: FF070 (Perfection products)
Wafer
diameter
Frame
type
(***)
6.0” (150 mm)
Thickness
(D)
0.048
Type A
Pin
location
(E)
2.370”
Inside
diameter
(A)
7.639”
Pin
location
(F)
2.500”
Outside
diameter
(B)
8.976”
Frame
style
DTF-2-6-1
Width
(C)
8.346”
Weight
(lbs)
(stainless)
0.21
Table 14: Details of film frame carrier
(***)
other size and type on request. Like FF108 and F123 frame type A
respectively for 8” and 12” wafer diameter.
Fig. 32: Dimension of film frame carrier
Waffle pack format definition: (Entegris product)
Pocket details
Case
size
Waffle Ref
E0201M
tbd
E0202
E0404
E0505
H20-032-1566C02
H20-047-2066CO2
H20-N126706
-66C02
X
±0.05 mm
Y
±0.05 mm
Z
±0.05 mm
A
±0.5°
0.81
0.81
0.38
5°
1.19
1.19
0.51
0°
1.85
1.45
0.36
7°
Max Qty per
waffle
20 x 20
(400)
20 x 20
(400)
16 x 19 (304)
Table 15a: Details of waffle pack
Overall tray size
Size
Height
Flatness
50.8 mm
±0.10 mm
3.96 mm
+0.05 -0.08
0.1 mm
Table 15b: Details of waffle pack
Fig. 33: Dimensions of waffle pack
The die orientation (no flip) within the pocket is related to the waffle pack orientation.
Rev. 1.0
19
IPDiA Capacitors – UBEC/ULEC Series - Wire Bondable
Assembly by Wirebonding
The attachment techniques recommended by IPDiA for the UBEC/ULEC capacitors on the customers
substrates are fully detailed in specific documents available on our website. To assure the correct use and
proper functioning of IPDiA capacitors please download the assembly instructions on
www.ipdia.com/assembly and read them carefully.
For UBEC assembly instructions,
please go to:
ww w. i p d i a .c om /as s em b l y a n d
download the pdf file called ‘UBEC
Capacitors - Assembly by
Wirebonding’
For ULEC assembly instructions,
please go to:
www.ipdia.c om /as s embl y and
download the pdf file called ‘ULEC
Capacitors - Assembly by
Wirebonding’
Rev. 1.0
20
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
UWSC 26 GHz+ - General Description
UWSC Capacitor targets Optical communication systems such as ROSA/TOSA, SONET and all
optoelectronics as well as High speed data systems or products. The UWSC is suitable for DC decoupling
and bypass applications in all broadband optoelectronics and High speed data systems. The unique
technology of integrated passive devices in silicon, developed by IPDiA, offers unique performances with
high rejection higher than 26+ GHz according to the capacitance value. These Ultra large band Wire
Bondable MOS vertical Silicon Capacitors (UWSC) have been developed in a semiconductor process, in
order to combine ultra-deep trench MOS capacitors for high capacitance value and single layer MOS
capacitors for low capacitance value in small form factor. Other capacitance values and other package size
are available as a single capacitor or capacitor array; please feel free to contact us. The UWSC capacitor
provides very high stability of the capacitance over temperature, voltage variation as well as very high
reliability. UWSC capacitors have an extended operating temperature ranging from -55°C to 150°C, with
very low capacitance change over temperature (0+/- 24 ppm). Standard form factors are 0101, 0201, 0202,
0303 & 0504 with values range covers from 10 pF to 22 nF.
Assembly: Please refer to our assembly recommendations p. 29.
Pad finishing: bottom electrode in Ti (0.1 μm)/Ni (0.3 μm)/Au (0.2 μm) and top electrode in Ti (0.2 μm) /
Cu (3.4 μm) / Ni (3 μm) / Au (1.5 μm). Other types of finishing are available on request such as 3 μm
Aluminum (Al/Si/Cu: 98.96%/1%/0.04%).
For any custom capacitance values and other package sizes please feel free to contact us.
1
Single layer
MOS capacitors
Ultra-deep trench
MOS capacitors
for low capacitance
for high capacitance
2
Fig. 34: UWSC capacitor soldered on board
Fig. 35: UWSC capacitor block
diagram (2 connections)
UWSC 26 GHz+ - Standard Electrical Performances
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
CP
Capacitance tolerance
-15
-
TOP
Operating temperature
-55
20
150
°C
TSTG
Storage temperature
-70
-
165
°C
CT
Capacitance temperature variation
-24
0
+24
ppm/◦C
CRVDC
Capacitance voltage variation
-
-
0.05
%/VDC
ESDHBM
ESD testing > 2 kV HBM stresses
2(**)
-
-
kV
IR
Insulation resistor
-
10
-
GΩ
-55 °C to 150 °C
From 0 V to
RVDC
GQS, SNW-FQ302A
(*)
+15
%
Table 16: UWSC standard electrical performances
(*) Other capacitance tolerances upon request
(**) for capacitance value, higher than 47pF
Rev. 1.0
21
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
UWSC 26 GHz+ - Specific Electrical Performances (Typical value)
P/N
935 153 622 210
935 154 622 210
935 153 622 310
935 154 622 310
935 153 622 410
935 154 622 410
935 153 822 410
935 154 822 410
935 153 528 210
935 154 528 210
935 153 528 247
935 154 528 247
935 153 528 333
935 154 528 333
935 153 521 310
935 154 521 310
935 153 521 410
935 154 521 410
935 153 620 510
935 154 620 510
935 153 624 522
935 154 624 522
935 153 821 510
935 154 821 510
Break down
voltage (V)
Nom. Rated
voltage
(VDC)
Capacitance
value (nF)
Case size
ESL
(pH)
ESR
(mΩ)
150
50
10 pF
W0101
15
185
150
50
100 pF
W0101
17
150
50
16.6
1
W0101
12
33
30
10
1
W0101
-
-
150
50
10 pF
W0201
3
<10
150
50
47 pF
W0201
6
62
150
50
330 pF
W0201
20
20
150
50
100 pF
W0202
10
<10
150
50
1
W0202
8
<10
50
16.6
10
W0303
6
14
50
16.6
22
W0504
6
7
30
10
10
W0202
3
<5
Table 17: UWSC specific electrical performances
UWSC 26 GHz+ - Frequency Response(*)
0101 - BV150 - UWSC capacitor: Impedance value vs. frequency
UWSCxx2.xxx
50Ω
50Ω
Fig. 36: 10 pF-250 µm thick- P/N: 935.153.522.210 (red curve), 100 pF-250 µm thick- P/N:
935.153.522.310 (green curve) and 150 pF-250 µm thick- P/N: 935.153.522.315 (blue
curve) frequency response of impedance.
Rev. 1.0
22
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
0201 - BV150 - UWSC capacitor: Impedance value vs. frequency
UWSCxx8.xxx
50Ω
50Ω
Fig. 37: 10 pF-250 µm thick- P/N: 935.153.528.210 (red curve), 15 pF-250 µm thick- P/N:
935.153.528.215 (green curve), 22 pF-250 µm thick- P/N: 935.153.528.222 (blue curve),
33 pF-250 µm thick- P/N: 935.153.528.233 (turquoise curve), 47 pF-250 µm thick- P/N:
935.153.528.247 (yellow curve), 68 pF-250 µm thick- P/N: 935.153.528.268 (fuchsia
curve), 150 pF-250 µm thick- P/N: 935.153.528.315 (grey curve), 220 pF-250 µm thickP/N: 935.153.528.322 (brown curve) and 330 pF-250 µm thick- P/N: 935.153.528.333
(green-blue curve) frequency responses of impedance in reflection mode
0202 – BV150 – UWSC capacitor : Impedance value vs. frequency
UWSCxx1.xxx
50Ω
50Ω
Fig. 38: 100 pF-250 µm thick- P/N: 935.153.521.310 (red curve), 680 pF-250 µm thickP/N: 935.153.521.368 (green curve) and 1 nF-250 µm thick- P/N: 935.153.521.410 (blue
curve) frequency responses of impedance in reflection mode.
(*)
The measurement results are only valid for the described test set up. Other configurations will lead to different results.
Rev. 1.0
23
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
UWSC 26 GHz+ - RF Perfomances
0202 – BV30 – UWSC capacitor : Impedance value vs. frequency
UWSCxx1.xxx
50Ω
50Ω
Fig. 39: 10 nF-250 µm thick- P/N: 935:153.821.510 (red curve) frequency responses of
impedance in reflection mode
0303/0504 – BV50 – UWSC capacitor : Impedance value vs. frequency
UWSCxxx.xxx
50Ω
50Ω
Fig. 40: 10 nF-250 µm thick- P/N: 935:153.620.510 (red curve) and 22 nF-250 µm thick P/N: 935:153.624.522 (blue curve) frequency responses of impedance in reflection mode
Fig. 41: 10 nF-250 µm thick- P/N: 935:153.620.510
Impedance characteristic versus Freq. in shunt mode
Fig. 42: 10 nF-250 µm thick- P/N: 935:153.620.510 ESL characteristic versus Frequency in shunt mode
Rev. 1.0
24
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
UWSC 26 GHz+ - Component Dimensions
( mm )
W0101
W0201
W0202
W0302
W0303
W0402
W0404
W0503
W0504
W0505
W0805
Pad dimension
a
b
>0.15
>0.15
>0.40
>0.15
>0.40
>0.40
>0.70
>0.40
>0.70
>0.70
>0.94
>0.40
>0.94
>0.94
>1.17
>0.72
>1.28
>0.92
>1.15
>1.15
>1.90
>1.15
Case size (typ. ±0.01mm)
L
W
T
0.25(*)
0.25(*)
0.50
0.25
0.50
0.50
0.80
0.50
0.25
0.80
0.80 (standard
1.04
0.50 profile) or
0.10 (low
1.04
1.04
profile)
1.27
0.82
1.38
1.02
1.25
1.25
2
1.25
W
L
a
b
T
Table 18: UWSC component dimensions
(*):
except for 1nF /0101/BV 50 V, case size = 0.294 x 0.294 mm
For landing pad dimensions on your PCB layout, please refer to the assembly chapter.
Package Outline and Orientation Mark
The UWSC capacitor is delivered as a bare die, with opening for contacts.
Die name
Fig. 43: Microphotograph of a 10 nF/0303 UWSC capacitor
UWSC 26 GHz+ - Capacitance Range
Available parts—For other values, contact
your IPDiA sales representative
Rev. 1.0
25
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
UWSC 26 GHz+ - Global Part Number Information
Example of a 10 nF – 0303 UWSC capacitor delivered in a 1000 unit Tape and Reel
935.153.62.0.5.10-T3O
T
BV
S
Type
935.153 = UWSC
thickness 250µm
935.154 = UWSC
thickness 100µm
Breakdown voltage
9 = 11 V
8 = 30 V
6 = 50 V
5 =150 V
B = 450 V
Size
2 = 0101
8 = 0201
1 = 0202
5 = 0302
0 = 0303
7 = 0402
3 = 0404
G = 0503
4 = 0504
H = 0505
J= 0606
6 = 0805
9 = Array4
A = Array8
B = Binary
.
.
U
.
0 = 10f
1 = 0.1p
2 = 1p
3 = 10p
4 = 0.1n
Unit
5 = 1n
6 = 10n
7 = 0.1µ
8 = 1µ
9 = 10µ
XX
.
PK / F
Value
10
15
22
33
47
68
-
Packing
W0: 2" x 2" waffle pack
F1: 6” film frame carrier
T3: T&R 1 000 units
T4: T&R 10 000 units
T5: T&R 5 000 units
Finishing
Top
O: electroplated
TiCuNiAu (Ti:0.2 µm;
Cu:3.4 µm; Ni :3 µm;
Au:1.5 µm)
A: Al (Al/Si/Cu:
98.96%/1%/0;.04%)
Bottom TiNiAu (Ti: 0.1
µm; Ni: 0.3 µm; Au: 0.2
µm)
UWSC 26 GHz+ - Available Parts
Part number
UWSC.xxx
Product description
Ultra large band Wire bondable vertical Silicon Capacitor, from -55°C to 150°C,
250 µm/100 µm of thickness, 26 GHz with:
• Top: electroplated TiCuNiAu (Ti: 0.2 µm; Cu: 3.4 µm; Ni :3 µm; Au: 1.5 µm)
• Bottom: TiNiAu (Ti: 0.1 µm; Ni: 0.3 µm; Au: 0.2 µm)
Thickness Case Size
S2P files
935 153 528 247
Ultra large band Wire bondable vertical Silicon capacitor 47 pF, BV=150 V
250 µm
W0201
Yes (**)
935 153 522 310
Ultra large band Wire bondable vertical Silicon capacitor 100 pF, BV=150 V
250 µm
W0101
Yes (**)
935 153 521 310
Ultra large band Wire bondable vertical Silicon capacitor 100 pF, BV=150 V
250 µm
W0202
Yes (*)
935 153 822 410
Ultra large band Wire bondable vertical Silicon capacitor 1 nF, BV=30 V
250 µm
W0101
Yes (**)
935 153 622 410
Ultra large band Wire bondable vertical Silicon capacitor 1 nF, BV=50 V
250 µm
W0101
Yes (**)
935 153 521 410
Ultra large band Wire bondable vertical Silicon capacitor 1nF, BV=150 V
250 µm
W0202
Yes (**)
935 153 821 510
Ultra large band Wire bondable vertical Silicon capacitor 10nF, BV=30 V
250 µm
W0202
Yes (**)
935 153 620 510
Ultra large band Wire bondable vertical Silicon capacitor 10nF, BV=50 V
250 µm
W0303
Yes (**)
935 153 624 522
Ultra large band Wire bondable vertical Silicon capacitor 22nF, BV=50 V
250 µm
W0504
Yes (**)
935 154 528 247
Ultra large band low profile Wire bondable vertical Silicon capacitor 47 pF, BV=150 V
100 µm
W0201
Yes (**)
935 154 522 310
Ultra large band low profile Wire bondable vertical Silicon capacitor 100 pF, BV=150 V
100 µm
W0101
Yes (**)
935 154 521 310
Ultra large band low profile Wire bondable vertical Silicon capacitor 100 pF, BV=150 V
100 µm
W0202
Yes (*)
935 154 822 410
Ultra large band low profile Wire bondable vertical Silicon capacitor 1 nF, BV=30 V
100 µm
W0101
Yes (**)
935 154 622 410
Ultra large band low profile Wire bondable vertical Silicon capacitor 1 nF, BV=50 V
100 µm
W0101
Yes (**)
935 154 521 410
Ultra large band low profile Wire bondable vertical Silicon capacitor 1nF, BV=150 V
100 µm
W0202
Yes (**)
935 154 821 510
Ultra large band low profile Wire bondable vertical Silicon capacitor 10nF, BV=30 V
100 µm
W0202
Yes (**)
935 154 620 510
Ultra large band low profile Wire bondable vertical Silicon capacitor 10nF, BV=50 V
100 µm
W0303
Yes (**)
935 154 624 522
Ultra large band low profile Wire bondable vertical Silicon capacitor 22nF, BV=50 V
100 µm
W0504
Yes (**)
(*)
FREE S-Parameters-Based Linear Simulation Models for ADS: http://www.modelithics.com/mvpIpdia.asp.
FREE S-Parameters-Based Linear Simulation Models for ADS: http://www.ipdia.com.
(**)
Rev. 1.0
26
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
UWSC 26 GHz+ - Packing Format
Tape and Reel format definition:
Cavity dimensions
Carrier
Tape
width
Carrier
Tape
pitch
Reel size
Qty per
reel
8 mm
4 mm
7”
1 000
0.31 mm
8 mm
4 mm
7”
1 000
1.00 mm
0.30 mm
8 mm
4 mm
7”
1 000
1.68 mm
0.42 mm
8 mm
4 mm
7”
1 000
Case size
(Thickness)
Tape Ref
W0201
tbd
W0202
YJ194
0.56 mm
0.56 mm
W0303
LO-618
1.00 mm
W0504
LO-719
1.27 mm
Ao
Bo
Ko
Table 19: Tape & Reel references
Width
Pitch
Fig. 45: Die orientation (no flip) within the carrier
(Pocket) related to tape and reel orientation
Fig. 44: Tape & Reel dimensions
Tape Width
A
Diameter
C
D
(min)
N
Hub
W1
W2
(max)
8 mm
178 mm
+/- 1.0
13.5 mm
± 0.5
20.2 mm
60 mm
+ 0.1 -0.0
93 mm
± 0.5
11.5
Table 20: Reel references used for tape width 8 mm
Fig. 46: Reel references and dimensions used for tape width 8 mm
Rev. 1.0
27
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
Film frame carrier format definition: Ref: FF070 (Perfection products)
Wafer
diameter
Frame
type
Inside
diameter
(A)
7.639”
(***)
6.0”
(150 mm)
Type A
Outside
diameter
(B)
8.976”
Width
(C)
8.346”
(***)
other size and type on request. Like FF108 and F123 frame type A
respectively for 8” and 12” wafer diameter
Thickness
(D)
Pin
location
(E)
2.370”
0.048
Fig. 47: Dimension of film
frame carrier
Pin
location
(F)
2.500”
Frame
style
DTF-2-6-1
Weight
(lbs)
(stainless)
0.21
Table 21: Details of film frame carrier
Waffle pack format definition: (Entegris product)
Pocket details
Case size
(Thickness)
Waffle Ref
W0101
tbd
W0101* (100 µm)
Max Qty per
waffle
X
±0.05 mm
Y
±0.05 mm
Z
±0.05 mm
A
±0.5°
H20-015-66C02
0.38
0.38
0.23
18°
20x20 (400)
W0101* (250 µm)
H20-018-12-66C02
0.46
0.46
0.3
14°
20x20 (400)
W0201
tbd
W0202 (250 µm)
H20-022-12-66CO2
0.58
0.58
0.3
5°
20x20 (400)
W0303 (250 µm)
H20-035-66C02
0.89
0.89
0.38
18°
20x20 (400)
W0504 (250 µm)
H20-N126706-66C02
1.85
1.45
0.36
7°
19x16 (304)
Table 22a: Details of waffle pack
(*):
except for 1 nF /0101/BV 50 V, case size = 0.294 mm x 0.294 mm
Overall tray size
Size
Height
Flatness
50.8 mm
±0.10 mm
3.96 mm
+0.05 -0.08
0.1 mm
Table 22b: Details of waffle pack
Fig. 48: Dimensions of waffle
pack
The die orientation (no flip) within the pocket is related to the waffle pack orientation.
Rev. 1.0
28
IPDiA Capacitors – UWSC Series - Wire Bondable Vertical
Assembly by Wirebonding
The attachment techniques recommended by IPDiA for the UWSC capacitors on the customers substrates
are fully detailed in specific documents available on our website. To assure the correct use and proper
functioning of IPDiA capacitors please download the assembly instructions on www.ipdia.com/
assembly and read them carefully.
For UWSC assembly instructions,
please go to:
ww w. i p d i a .c om /as s em b l y a n d
download the pdf file called ‘UWSC
Capacitors - Assembly by
Wirebonding’
Rev. 1.0
29
IPDiA Ultra Broadband Silicon Capacitors
Definitions
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be
published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress
above one or more of the limiting values may cause permanent damage to the device. These are stress
ratings only and operation of the device at these or any other conditions above those given in the
Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Life Support Applications
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. IPDiA customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify IPDiA for any damages resulting from such
improper use or sale.
Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner. The
information presented in this document does not form
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Date of release: 01/03/2016
Rev 1.0
Document ID: Product Line Technical Datasheet