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HMC413QS16G / 413QS16GE
v04.0505
11
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Typical Applications
Features
This amplifier is ideal for use as a power/driver
amplifier for 1.6 - 2.2 GHz applications:
Gain: 23 dB
• Cellular / PCS / 3G
42% PAE
• Portable & Infrastructure
Supply Voltage: +2.75V to +5V
• Wireless Local Loop
Power Down Capability
Saturated Power: +29.5 dBm
Low External Part Count
LINEAR & POWER AMPLIFIERS - SMT
Included in the HMC-DK002 Designer’s Kit
Functional Diagram
The HMC413QS16G & HMC413QS16GE are high
efficiency GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC Power amplifiers which operate
between 1.6 and 2.2 GHz. The amplifier is packaged
in a low cost, surface mount 16 leaded package with
an exposed base for improved RF and thermal performance. With a minimum of external components, the
amplifier provides 23 dB of gain, +29.5 dBm of saturated power at 42% PAE from a +5V supply voltage.
The amplifier can also operate with a 3.6V supply. Vpd
can be used for full power down or RF output power/
current control.
Electrical Specifi cations, TA = +25° C, As a Function of Vs, Vpd = 3.6V
Vs= 3.6V
Parameter
Vs= 5V
Frequency
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.1 GHz
2.1 - 2.2 GHz
Gain
Units
Min.
Typ.
18
19
18
17
21
22
21
20
Max.
Min.
Typ.
19
20
19
18
22
23
22
21
1.6 - 2.2 GHz
0.025
1.6 - 2.2 GHz
10
10
Output Return Loss
1.6 - 2.2 GHz
8
9
dB
Output Power for 1 dB Compression (P1dB)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
26
27
dBm
dBm
Saturated Output Power (Psat)
1.6 - 1.7 GHz
1.7 - 2.2 GHz
28.5
29.5
dBm
dBm
Output Third Order Intercept (IP3)
1.6 - 1.7 GHz
1.7 - 2.0 GHz
2.0 - 2.2 GHz
39
40
39
dBm
dBm
dBm
Noise Figure
1.6 - 2.2 GHz
5.5
5.5
dB
0.002/220
0.002/270
mA
7
7
mA
80
80
ns
Supply Current (Icq)
Vpd= 0V/3.6V
Control Current (Ipd)
Vpd= 3.6V
tON, tOFF
23
24
0.025
dB
dB
dB
dB
Input Return Loss
20
21
0.035
Max.
Gain Variation Over Temperature
Switching Speed
11 - 50
General Description
23
24
25.5
26.5
32
33
32
35
36
35
36
37
36
0.035
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
dB/°C
dB
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Gain vs. Temperature, Vs= 5V
30
30
25
25
20
20
GAIN (dB)
15
+25 C
+85 C
-40 C
10
5
1.5
1.7
1.9
2.1
2.3
0
1.3
2.5
1.5
FREQUENCY (GHz)
-4
-4
RETURN LOSS (dB)
RETURN LOSS (dB)
0
-8
-12
S11
-16
1.9
2.1
2.3
1.5
24
P1dB (dBm)
P1dB (dBm)
24
20
+25 C
+85 C
-40 C
16
8
4
2.3
2.5
2.3
2.5
+25 C
+85 C
-40 C
12
4
FREQUENCY (GHz)
2.1
20
8
2.1
1.9
P1dB vs. Temperature, Vs= 5V
28
1.9
1.7
FREQUENCY (GHz)
28
1.7
2.5
-12
32
1.5
2.3
-8
32
0
1.3
2.5
S22
-20
1.3
2.5
P1dB vs. Temperature, Vs= 3.6V
12
2.3
S11
FREQUENCY (GHz)
16
2.1
-16
S22
1.7
1.9
Return Loss, Vs= 5V
0
1.5
1.7
FREQUENCY (GHz)
Return Loss, Vs= 3.6V
-20
1.3
11
+25 C
+85 C
-40 C
10
5
0
1.3
15
LINEAR & POWER AMPLIFIERS - SMT
GAIN (dB)
Gain vs. Temperature, Vs= 3.6V
0
1.3
1.5
1.7
1.9
2.1
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 51
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
28
28
24
24
20
20
16
Psat (dBm)
32
+25 C
+85 C
-40 C
12
16
8
4
4
1.5
1.7
1.9
2.1
2.3
0
1.3
2.5
+25 C
+85 C
-40 C
12
8
1.5
1.7
FREQUENCY (GHz)
2.3
2.5
46
42
38
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
2.1
Power Compression@ 1.9 GHz, Vs= 5V
46
Pout (dBm)
Gain (dB)
PAE (%)
34
30
26
22
18
14
10
6
2
-12
1.9
FREQUENCY (GHz)
Power Compression@ 1.9 GHz, Vs= 3.6V
42
38
Pout (dBm)
Gain (dB)
PAE (%)
34
30
26
22
18
14
10
6
-10
-8
-6
-4
-2
0
2
4
6
8
2
-12 -10 -8
10
INPUT POWER (dBm)
38
40
34
36
30
32
IP3 (dBm)
44
+25 C
+85 C
-40 C
22
20
16
1.9
2.1
FREQUENCY (GHz)
0
2
4
6
8
10 12
14
+25 C
+85 C
-40 C
24
14
1.7
-2
28
18
1.5
-4
Output IP3 vs. Temperature, Vs= 5V
42
26
-6
INPUT POWER (dBm)
Output IP3 vs. Temperature, Vs= 3.6V
10
1.3
11 - 52
Psat vs. Temperature, Vs= 5V
32
0
1.3
IP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
11
Psat (dBm)
Psat vs. Temperature, Vs= 3.6V
2.3
2.5
12
1.3
1.5
1.7
1.9
2.1
2.3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
2.5
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Power Down Isolation, Vs= 3.6V
0
0
-10
-10
-20
ISOLATION (dB)
ISOLATION (dB)
Reverse Isolation
vs. Temperature, Vs= 3.6V
+25 C
+85 C
-40 C
-30
-40
-20
-30
11
-40
-50
-60
-70
1.3
1.5
1.7
1.9
2.1
2.3
-60
1.3
2.5
1.5
1.7
FREQUENCY (GHz)
8
8
NOISE FIGURE (dB)
NOISE FIGURE (dB)
10
6
4
+25 C
+85 C
-40 C
1.7
1.9
4
+25 C
+85 C
-40 C
2
2.1
2.3
0
1.5
2.5
1.7
29
32
2.5
26
26
25
24
24
22
23
20
22
P1dB
Psat
21
18
16
14
20
4.75
Vcc SUPPLY VOLTAGE (Vdc)
5.25
330
270
Icq
25
22
210
19
150
Gain
P1dB
Psat
16
90
30
13
1.5
Icq (mA)
27
28
P1dB, Psat (dBm)
GAIN (dB)
30
Gain
4.25
2.3
28
GAIN (dB), P1dB (dBm), Psat (dBm)
34
3.75
2.1
Gain, Power & Quiescent Supply
Current vs. Vpd @ 1.9 GHz, Vcc = +3.6V
30
3.25
1.9
FREQUENCY (GHz)
Gain & Power vs.
Supply Voltage @ 1.9 GHz
2.75
2.5
6
FREQUENCY (GHz)
28
2.3
Noise Figure vs. Temperature, Vs= 5V
10
0
1.5
2.1
FREQUENCY (GHz)
Noise Figure vs. Temperature, Vs= 3.6V
2
1.9
LINEAR & POWER AMPLIFIERS - SMT
-50
1.75
2
2.25
2.5
2.75
3
3.25
3.5
Vpd (Vdc)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 53
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Absolute Maximum Ratings
LINEAR & POWER AMPLIFIERS - SMT
11
Collector Bias Voltage (Vcc)
+5.5 Vdc
Control Voltage (Vpd1, Vpd2)
+4.0 Vdc
RF Input Power (RFIN)(Vs = +5Vdc,
Vpd = +3.6 Vdc)
+15 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 24 mW/°C above 85 °C)
1.56 W
Thermal Resistance
(junction to ground paddle)
42 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS].
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC413QS16G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC413QS16GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
HMC413
XXXX
[2]
HMC413
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
11 - 54
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Pin Descriptions
Function
Description
1, 2, 4, 5, 7, 8,
9, 10, 13, 15
GND
Ground: Backside of package has exposed metal ground slug that
must be connected to ground thru a short path. Vias under the device
are required.
3, 14
Vpd1, Vpd2
Power Control Pin. For maximum power, this pin should be connected
to 3.6V. For 5V operation, a dropping resistor is required. A higher
voltage is not recommended. For lower idle current, this voltage can
be reduced.
6
RFIN
This pin is AC coupled and matched to 50 Ohms from 1.6 to 2.2 GHz.
11, 12
RFOUT
RF output and bias for the output stage.
16
Vcc
Power supply voltage for the first amplifier stage. An external bypass
capacitor of 330 pF is required as shown in the application schematic.
Interface Schematic
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11
LINEAR & POWER AMPLIFIERS - SMT
Pin Number
11 - 55
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Evaluation PCB
LINEAR & POWER AMPLIFIERS - SMT
11
* For 5V operation on Vctl line,
select R1, R2 such that 3.6V is
presented on Pins 3 and 14.
List of Materials for Evaluation PCB 105000 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3
2 mm DC Header
C1
2.2 pF Capacitor, 0603 Pkg.
C2
10 pF Capacitor, 0402 Pkg.
C3 - C4
330 pF Capacitor, 0603 Pkg.
C5
2.2 μF Capacitor, Tantalum
L1
16 nH Inductor 0603 Pkg.
U1
HMC413QS16G / HMC413QS16GE
Amplifier
PCB [2]
105018 Eval Board
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation board should be mounted to an
appropriate heat sink. The evaluation circuit board
shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
11 - 56
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC413QS16G / 413QS16GE
v04.0505
GaAs InGaP HBT MMIC
POWER AMPLIFIER, 1.6 - 2.2 GHz
Application Circuit
TL1
TL2
TL3
Impedance
50 Ohm
50 Ohm
50 Ohm
Length
0.1”
0.15”
0.1”
* For 5V operation on Vctl line, select R1, R2 such that 3.6V is presented on Pins 3 and 14.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 57
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
Analog Devices Inc.:
HMC413QS16GE HMC413QS16GETR 105000-HMC413QS16G