RF2334
4
GENERAL PURPOSE AMPLIFIER
Typical Applications
• Broadband, Low Noise Gain Blocks
• Final PA for Low Power Applications
• IF or RF Buffer Amplifiers
• Broadband Test Equipment
• Driver Stage for Power Amplifiers
GENERAL PURPOSE
AMPLIFIERS
4
Product Description
The RF2334 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily-cascadable 50Ω gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 4000MHz.
The device is self-contained with 50Ω input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2334 is available in a very small industry-standard SOT23-5 surface
mount package, enabling compact designs which conserve board space.
1.60
+ 0.01
0.400
1
2.90
+ 0.10
!
GaAs HBT
GaAs MESFET
Si Bi-CMOS
SiGe HBT
Si CMOS
GaInP/HBT
GaN HEMT
SiGe Bi-CMOS
0.950
2.80
+ 0.20
3° MAX
0° MIN
1.44
1.04
Dimensions in mm.
0.127
0.45
+ 0.10
Optimum Technology Matching® Applied
Si BJT
0.15
0.05
Package Style: SOT23-5
Features
• DC to 6000MHz Operation
• Internally matched Input and Output
• 16dB Small Signal Gain
• 5dB Noise Figure
• +18.5dBm Output Power
GND 1
5 RF OUT
• Single Positive Power Supply
GND 2
RF IN 3
4 GND
Ordering Information
RF2334
RF2334 PCBA
Functional Block Diagram
Rev A6 020501
General Purpose Amplifier
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
4-121
RF2334
Absolute Maximum Ratings
Parameter
Supply Current
Input RF Power
Operating Ambient Temperature
Storage Temperature
GENERAL PURPOSE
AMPLIFIERS
4
Parameter
Rating
Unit
90
+13
-40 to +85
-60 to +150
mA
dBm
°C
°C
Specification
Min.
Typ.
Max.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Unit
T=25°C, ICC =65mA
Overall
Frequency Range
3dB Bandwidth
Gain
Gain Flatness
Noise Figure
Input VSWR
Output VSWR
Output IP3
Output P1dB
Reverse Isolation
DC to 6000
2.5
19.4
18
16
14
13
±2
4.8
2.1:1
1.8:1
+33
+18.5
20.5
MHz
GHz
dB
dB
dB
dB
4.8
65
V
mA
dB
dB
dBm
dBm
dB
Power Supply
Device Operating Voltage
Operating Current
4-122
Condition
Freq=100MHz
Freq=1000MHz
Freq=2000MHz
Freq=3000MHz
Freq=4000MHz
100MHz to 2000MHz
Freq=2000MHz
In a 50Ω system, DC to 4000MHz
In a 50Ω system, DC to 4000MHz
Freq=1000MHz±50kHz, PTONE =-10dBm
Freq=1000MHz
Freq=2000MHz
With 22Ω bias resistor
At pin 5 with ICC =65mA
Rev A6 020501
RF2334
Function
GND
2
3
GND
RF IN
4
5
GND
RF OUT
Description
Interface Schematic
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
Same as pin 1.
RF input pin. This pin is NOT internally DC-blocked. A DC-blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instability.
Same as pin 1.
4
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is determined by the following equation:
( V SUPPLY – V DEVICE )
R = ------------------------------------------------------I CC
RF OUT
RF IN
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 90 mA over the planned operating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 4.9V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
VCC
P1-1
P1
P1-1
1
VCC
2
GND
3
NC
R1
22 Ω
L1
100 nH
1
J1
RF IN
50 Ω µstrip
C1
100 pF
5
C2
100 pF
2
3
C3
100 pF
C4
1 µF
50 Ω µstrip
J2
RF OUT
4
233X410-
Rev A6 020501
4-123
GENERAL PURPOSE
AMPLIFIERS
Pin
1
RF2334
Evaluation Board Layout
Board Size 1.0” x 1.0”
Board Thickness 0.020”, Board Material R0-4003 Rogers
GENERAL PURPOSE
AMPLIFIERS
4
4-124
Rev A6 020501
RF2334
Gain versus Frequency Across Temperature
Output P1dB versus Frequency Across Temperature
ICC = 65 mA
22.0
ICC = 65 mA
20.0
-40°C
-40°C
26°C
20.0
85°C
19.0
26°C
18.0
85°C
17.0
16.0
14.0
16.0
4
15.0
14.0
13.0
12.0
12.0
11.0
10.0
10.0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0
1.0
2.0
Frequency (GHz)
Output IP3 versus Frequency Across Temperature
4.0
5.0
6.0
Noise Figure versus Frequency Across Temperature
ICC = 65 mA
35.00
3.0
Frequency (GHz)
ICC = 65 mA
9.00
-40°C
26°C
33.00
8.00
31.00
Noise Figure (dB)
3rd Order Intercept Power (dBm)
85°C
29.00
27.00
7.00
6.00
5.00
25.00
-40°C
4.00
23.00
26°C
85°C
21.00
3.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
0.10
0.69
1.28
1.87
Frequency (GHz)
Input VSWR versus Frequency Across Temperature
4.23
4.82
5.41
6.00
-40°C
26°C
26°C
85°C
2.00
2.00
85°C
1.80
VSWR
1.80
VSWR
3.64
ICC = 65 mA
2.20
-40°C
1.60
1.60
1.40
1.40
1.20
1.20
1.00
0.10
3.05
Output VSWR versus Frequency Across Temperature
ICC = 65 mA
2.20
2.46
Frequency (GHz)
1.00
0.69
1.28
1.87
2.46
3.05
3.64
Frequency (GHz)
Rev A6 020501
4.23
4.82
5.41
6.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
4-125
GENERAL PURPOSE
AMPLIFIERS
Output Power (dbm)
Gain (dB)
18.0
RF2334
Reverse Isolation versus Frequency Across
Temperature, ICC = 65 mA
22.00
-40°C
26°C
21.00
85°C
Reverse Isolation (dB)
18.00
17.00
16.00
15.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
Swp Max
6GHz
0.
0
3.
2.
0
2.
0
6
0.
0.8
1.0
De-Embedded S22, VCC =S22
4.84V, ICC = 65mA, T = 25°C
Swp Max
6GHz
6
0.
0.8
1.0
De-Embedded S11, VCC S11
= 4.84V, ICC = 65mA, T = 25°C
4
4
0
3.
0
4.
0
4.
5.0
5.0
0.2
0.2
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0.2
0
10.0
5.0
4.0
3.0
2.0
1.0
0.8
0.6
0.4
0
10.0
-10.0
2
0
-0.
-5.
0
-4
.0
Swp Min
0.01GHz
.0
-2
-1.0
-0
.6
.0
-2
-1.0
-0.8
-0
.6
4-126
.4
-0
-0.8
-3
.0
4
-3
.0
.
-0
-4
.0
2
-0.
-5.
0.2
10.0
-10.0
GENERAL PURPOSE
AMPLIFIERS
19.00
0.
4
20.00
Swp Min
0.01GHz
Rev A6 020501