2016 IEEE International Conference on
Electron Devices and Solid-State Circuits (EDSSC’16)
Conference at a Glance
August 3-5. 2016 The University of Hong Kong
Conference at a Glance
(latest version at http://www.eee.hku.hk/edssc2016/program.html)
Aug 3 (Wednesday)
Opening Ceremony
(8:45 – 9:15)
Aug 4 (Thursday)
T2
T1
Digital 2
Plenary Session 1
(9:15 – 10:45)
Break (10:45- 11:00)
Aug 5 (Friday)
T3
HV and Power RF Devices
Devices 1
and Circuits
F1
Data
Converters 2
Break (9:50 – 10:10)
T4
Analog 1
Plenary Session 2
(11:00 – 12:30)
Lunch (12:30 – 14:10)
W1
W2
W3
T7
Emerging
Devices 1
Sensors,
Imagers and
MEMS 1
Device
Modeling and
Simulation 1
Break (15:40 – 16:00)
W5
W6
Emerging
Devices 2
Novel Devices
1
Digital 1
T10
Analog 2
T5
T6
F4
F5
F6
Emerging
Devices 3
High Speed
Circuits
Device
Modeling and
Simulation 2
Sensors,
Imagers and
MEMS 2
Power
Management
ICs
T8
Closing Remarks (12:00 – 12:15)
T9
Device
Novel Devices
Physics and
2
Reliability
Break (15:50 – 16:10)
W4
F3
HV and
Power
Devices 2
Break (9:50 – 10:10)
Lunch (12:00 – 14:00)
NanoElectronics 1
F2
T11
T12
Memory
NanoData
Technology Electronics 2 Converters 1
& Dielectrics
Break (17:40 – 19:00)
Banquet
(19:00 – 21:00)
1
Poster
Session
(15:50 17:40)
Please note that the poster
session will be held on
Thursday August 4
August 3, 2016 (Wednesday)
8:15-8:45 Registration (Rayson Huang Theatre)
Opening Ceremony and Plenary Session August 3 Wednesday (8:45 - 12:30)
Venue: Rayson Huang Theatre
Session Chairs: W.T. Ng and J.J. Liou
8:45 9:15
9:15 10:00
Opening Ceremony
PL1.
Memory - the N3XT Frontier
Philip Wong
Stanford University, USA
10:00 10:45
PL2. Device Modeling for Circuit Simulation in Nanometer Technology
Zhihong Liu
ProPlus Design Solutions, USA
10:45 11:00
11:00 11:45
Break
PL3.
Circuit Design in Nano-Scale CMOS Technologies
Kevin Zhang
Intel, USA
11:45
12:30
PL4.
Mixed-Signal Circuits for the Data-Driven World
Boris Murmann
Stanford University, USA
Oral Sessions (Knowles Building)
W1: Nanoelectronics 1 August 3, Wednesday (14:10 - 15:40)
Venue: Room XXX
Session Chairs: TBA
14:10 14:40
Inv.1
Nanocarbon Via Interconnects
Cary Yang
(Invited)
Santa Clara University, USA
14:40 15:00
W1.1
A Novel Thin-Film Transistor using Carbon Nanotubes as Both Channel and
Electrodes
Peijian He, Yanyan Deng, Chun Chen, Min Zhang
Peking University, Shenzhen, China
Shenzhen Thin Film Transistor and Advanced Display Lab, China
15:00 15:20
W1.2
Electrical performances of ALD HfTiO back-gated multilayer MoS2 transistors
Ming Wen, J. P. Xu, L. Liu, Y. Huang, P.T. Lai, and W. M. Tang
Huazhong University of Science and Technology, Wuhan, China
University of Hong Kong, Hong Kong
Polytechnic University, Hong Kong
15:20 15:40
W1.3
Nanostructured TiO2 Schottky Diode with Large Surface Area for Chemical
Sensors
Wenhao Yan, Jerry Yu, Derek Ho
City University of Hong Kong, Hong Kong
2
W2: Emerging Devices 1 August 3, Wednesday (14:10 - 15:40)
Venue: Room XXX
Session Chair: TBA
14:10 14:40
Inv.2
Bandgap Engineering in 2D Layered Materials
Zhihong Chen
(Invited)
Purdue University, USA
14:40 15:00
W2.1
Transparent Gate Recessed Channel (TGRC) MOSFET for Improved Linearity
and Analog Performance
Ajay Kumar and Rishu Chaujar
Delhi Technological University, India
15:00 15:20
W2.2
Effect of Si-Delta Doping and Barrier Lengths on The Performance of Triple
Barrier GaAs/AlGaAs Resonant Tunneling Diode
Man Mohan Singh, M. J. Siddiqui
Aligarh Muslim University, Aligarh, India
15:20 15:40
W2.3
Analytical Drain Current Model for Long-Channel Double-Gate Negative
Capacitance Junctionless Transistors Using Landau Theory
Chunsheng Jiang1, Renrong Liang, Jing Wang, and Jun Xu
Tsinghua University, Beijing, China
W3: Sensors, Imagers and MEMS 1 August 3, Wednesday (14:10 - 15:40)
Venue: Room XXX
Session Chair: TBA
14:10 14:40
Inv.3
MEMS Pressure Sensors for High-Temperature High-Pressure Downhole
Applications
Fan Zeng, Lei Lu, Yiming Zhang, Shichao Guo, Man Wong, and Kevin Chau
(Invited)
Institute of Geology and Geophysics, Chinese Academy of Sciences, Beijing, China
Hong Kong University of Science and Technology, Hong Kong
14:40 15:00
W3.1
CMOS Computational Pixel for Binary Temporal Optically Encoded HighSpeed Imaging
Yi Luo, Shahriar Mirabbasi, and Derek Ho
University of British Columbia, Canada
City University of Hong Kong, Hong Kong
15:00 15:20
W3.2
An Oscillator-based CMOS Magneto-Sensitive Biosensor with A Low Noise
and Low Temperature Coefficient LDO Regulator
Jinwen Geng, Lei Zhang, Cheng Zhu, and He Qian
Tsinghua University, Beijing, China
15:20 15:40
W3.3
Inductance to DC Resistance Ratio Optimization of On-Chip Closed-Core
Spiral Power Inductors
Shujie Chen, Yunkun Li, and Rongxiang Wu
University of Electronic Science and Technology of China, Chengdu, China
3
W4: Emerging Devices 2 August 3, Wednesday (16:00 - 17:30)
Venue: Room XXX
Session Chair: TBA
16:00 16:30
Inv.4
Manufacturing of Using Spray Method to Produce Solar Cell
Po-Ying Chen
(Invited)
National Chin-Yi University of Technology, Taiwan
16:30 16:50
W4.1
Quantum Ballistic Transport In Ultra-Small Silicon Channel Cylindrical Gate
All Around Junction Less Nanowire Transistor Using NEGF Formalism
Md. Mohsinur Rahman Adnan, Md. Samzid Bin Hafiz, Nujhat Tasneem, Quazi D.M.
Khosru
Bangladesh University of Engineering and Technology, Bangladesh
16:50 17:10
W4.2
The Immunity of Doping-less Junctionless Transistor Variations Including the
Line Edge Roughness
Wenbo Wan, Haijun Lou, YingXiao, Xinnan Lin
Peking University, Shenzhen, China
Lanzhou University of Technology, Lanzhou, China
17:10 17:30
W4.3
Ultra-thin and Ultra-flexible Temperature /Strain Sensor with CNT Nanostrips
Yihao Chen, Bingwei Lu, Xue Feng
Tsinghua University, China
W5: Novel Devices 1 August 3, Wednesday (16:00 - 17:30)
Venue: Room XXX
Session Chair: TBA
16:00 16:30
Inv.5
Investigation and Application of Novel Transistors with Semi-Floating Gate
Device Concept and Device Structure
Peng-fei Wang
(Invited)
Fudan University, China
16:30 16:50
W5.1
Bipolar Resistive Switching in Al/GO-PEDOT:PSS/Pt Memory Devices
Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Chongjie Wang, and Rongshan
Wei
Tsinghua University, Beijing, China
Beijing University of Chemical Technology, Beijing, China
Fuzhou University, Fuzhou, China
16:50 17:10
W5.2
Near-infrared Light Emitting Diode Array Based on Ordered Si
Micropillar/InGaZnO-nanofilm Heterojunctions
Jin Wang, Renrong Liang, Libin Liu, Bolin Shan, Jing Wang, Jun Xu
Tsinghua University, Beijing, China
17:10 17:30
W5.3
Solar-Blind Deep-Ultraviolet Photodetector Based on the β-Ga2O3 Thin Film
Grown on Annealed C-plane Sapphire Substrate
Z.H. Wu, L.X. Qian, T. Sheng, Y.Y. Zhang and X.Z. Liu
University of Electronic Science and Technology of China, Chengdu, China
4
W6: Digital 1 August 3, Wednesday (16:00 - 17:30)
Venue: Room XXX
Session Chair: TBA
16:00 16:30
Inv.6
Circuit Design of Physical Unclonable Function for Security Applications in
Standard CMOS Technology
Byong-Deok Choi
(Invited)
Hanyang University, South Korea
16:30 16:50
W6.1
Low Perfusion Algorithm used in Wearable Oximeter and Hardware
Acceleration
Xufeng Wu, Zhaoxia Zheng, Xiaogang Zeng, Panting Jiang
Huazhong University of Science and Technology, Wuhan, China
16:50 17:10
W6.2
Voltage Comparison Based High Speed & Low Power Domino Circuit for wide
fan-in Gates
Pratosh Kumar Pal , Avaneesh Kumar Dubey, Sankit R. Kassa and R. K. Nagaria
Motilal Nehru National Institute of Technology Allahabad, India
17:10 17:30
W6.3
Systolic Array Based VLSI Architecture for High Throughput 2-D Discrete
Wavelet Transform
Hongda Wang and Chiu-Sing Choy
The Chinese University of Hong Kong, Hong Kong
5
August 4, 2016 (Thursday)
T1: Digital 2 August 4, Thursday (8:50 - 9:50)
Venue: Room XXX
Session Chair: TBA
8:50 9:10
T1.1
A 0.68-to-1.44 GHz Low-Jitter All-Digital Phase-Locked Loop with A Novel PFD
and A High Resolution DCO in 0.18μm CMOS
Xiaoying Deng , Yanyan Mo, Xin Lin, Mingcheng Zhu
Shenzhen University, China
9:10 9:30
T1.2
9:30 9:50
T1.3
An Optimized Design of Reversible Magnitude and Signed Comparators
Nagamani A N, Desik Rengarajan Vinod K Agrawal
P.E.S Institute of Technology, Bangalore, India
Designed the Embedded Processors on System Level
Jih-Fu Tu
St. John’s University, Taiwan
T2: HV and Power Devices August 4, Thursday (8:30 - 9:50)
Venue: Room XXX
Session Chair: TBA
8:30 8:50
T2.1
A Novel Split-Gate Structure for 85V Applications with Low Output
Capacitance
Ye Tian, Zhuo Yang, Fangjuan Bian, Xin Tong, Jing, Zhu, Weifeng Sun, Longxing Shi, and
Yuanzheng Zhu, and Peng Ye
Southeast University, Nanjing, China
Wuxi NCE Power Co. Ltd., Wuxi, China
8:50 9:10
T2.2
An Improved Structure to Enhance the Robustness of SiC power MOSFETs
for a Low Ron,sp
Xintian Zhou, Ruifeng Yue, Gang Dai, Juntao Li, and Yan Wang
Tsinghua University, Beijing, China
Microsystem and Terahertz Research Center/China Academy of Engineering Physics, China
9:10 9:30
T2.3
A Variation Laterl Doping Layer and Lightly Doped Region Compensated
Superjunction LDMOS
Lixiao Liang, Haimeng Huang, Xingbi Chen
University of Electronic Science and Technology of China, Chengdu, China
9:30 9:50
T2.4
Modeling of High Voltage LDMOSFET Using Industry Standard BSIM6 MOS
Model
Chetan Gupta, Harshit Agarwal, Yogesh S. Chauhan, Sourabh Khandelwal, Yen-Kai Lin,
Chenming Hu, and Renaud Gillon
Indian Institute of Technology Kanpur, Kanpur, India
University of California Berkeley, USA
ON Semiconductor, Belgium
T3: RF Devices and Circuits August 4, Thursday (8:30 - 9:50)
Venue: Room XXX
6
Session Chair: TBA
8:30 8:50
T3.1
High Power Performance AlGaN/GaN Double Heterostructure HMET with 0.1
μm Y-shaped Gate Encapsulated with Low-κ BCB
Xinxin Yu, Jianjun Zhou, Yuechan Kong, Daqing Peng, Weibo Wang, Fangjin Guo, Haiyan
Lu, Wen Wang, Cen Kong, Zhonghui Li, and Tangsheng Chen
Nanjing Electronic Devices Institute, Nanjing, China
8:50 9:10
T3.2
Measurement and Modeling Techniques for InP-Based HBT Devices to
220GHz
Haiyan Lu, Wei Cheng, Zhijiang Zhou, Oupeng Li，Bin Niu, Yuechan Kong, Tangsheng
Chen
Nanjing Electronic Devices Institute, Nanjing, China
Hangzhou Dianzi University, Hangzhou, China
University of Electronic Science and Technology of China Chengdu, China
9:10 9:30
T3.3
A Reconfigurable UHF CMOS Voltage Multiplier
Jingbin Jia and Ka Nang Leung
The Chinese University of Hong Kong, Hong Kong
9:30 9:50
T3.4
A 66-to-76GHz E-band QPLL with Amplifier Feedback QVCO in 65-nm CMOS
Xinxin Zhu, Lei Zhang, Yan Wang, and Zhiping Yu
Tsinghua University, Beijing, China
7
T4: Analog 1 August 4, Thursday (10:10 – 12:00)
Venue: Room XXX
Session Chair: TBA
10:10 10:40
Inv.7
Design Guidelines of ΣΔ Modulators: From System to Chip and Application to
Reconfigurable ADCs
Jośe M. de la Rosa
(Invited)
Instituto de Microelectrónica de Sevilla, Spain
10:40 11:00
T4.1
An Analysis of Offset Calibration Based Additional Load Capacitor Imbalance
for Two-Stage Dynamic Comparator
Dong Li, Qiao Meng, Fei Li and Linfeng Wang
Southeast University, Nanjing, China
11:00 11:20
T4.2
A Fast Three-Level Feedback Technique in Continuous-Time Delta-Sigma
Modulators
Debajit Basak, Daxiang Li, Zhongi Fu, Jiangpeng Wang, Zhang Yang and Kong-Pang Pun
The Chinese University of Hong Kong, Hong Kong
11:20 11:40
T4.3
Electrostatic Energy Harvester Based on Charge-Trapping Nonvolatile
Memory Structure
J.J. Shi and X.D. Huang
Southeast University, Nanjing, China
11:40 12:00
T4.4
A Five-Order Butterworth Low-Pass Filter with DC Offset Cancellation for
WLAN Applications
Dongyang Yan, Lei Zhang, Li Zhang, and Yan Wang
Tsinghua University, Beijing, China.
T5: Emerging Devices 3 August 4, Thursday (10:10 – 12:00)
Venue: Room XXX
Session Chair: TBA
10:10 10:40
Inv.8
Toward High-Performance Electronics based on Carbon Nanomaterials
Shu-Jen Han
(Invited)
IBM T.J. Watson Research Center US
10:40 11:00
T5.1
Exposure Optimization for Multi-Bit Quanta Image Sensor with Ultra-Small
Well Capacity
Ka Wai Cheung, Hiu Tung Wong, and Derek Ho
City University of Hong Kong, Hong Kong
11:00 11:20
T5.2
High-Speed Disturbance-Free Nonvolatile Flip-Flop Based on Complementary
Polarizers
Lianhua Qu, Zhenyu Zhao, Yao Wang, Huan Li, Haoyue Tang, Quan Deng, and Peng Li
National University of Defense Technology, Changsha, China
11:20 11:40
T5.3
Comparative Study of InGaZnO Thin-Film Transistors with Single and Dual
NbLaO Gate Dielectric Layers
J.Q. Song, P.T. Lai, and X. D. Huang
University of Hong Kong, Hong Kong
Southeast University, Nanjing, China
8
11:40 12:00
T5.4
Modeling of Fringe Current for Semiconductor-Extended Organic TFTs
H M Dipu Kabir, Zubair Ahmed, Remashan Kariyadan, Lining Zhang, Mansun Chan
The Hong Kong University of Science and Technology, Hong Kong
T6: High Speed Circuits August 4, Thursday (10:10 – 12:00)
Venue: Room XXX
Session Chair: TBA
10:10 10:40
Inv.9
Scaling Challenges and Solutions beyond 10nm
Srinivasa Banna
(Invited)
Globalfoundries, USA
10:40 11:00
T6.1
A 10GHz Analog Phase Interpolator Based on a Novel Quadrature Clock
Generator
Xiaoting Zhi, Weixin Gai, Liangxiao Tang, Linqi Shi
Peking University, Beijing, China
Peking University, Shenzhen, China
Beida (Binhai) Information Research, Tianjin, China
11:00 11:20
T6.2
A Speculative Clock and Data Recovery Architecture for Multi-Gigabit/s Series
Links
Tong Zhao, Weixin Gai, Liangxiao Tang , Linqi Shi, Xing Zhang, Tong Zhao, Weixin Gai,
Liangxiao Tang, Linqi Shi
Peking University, Beijing, China
Beida (Binhai) Information Research, Tianjin, China
11:20 11:40
T6.3
Design of 20-Gb/s Four-Level Pulse Amplitude Modulation VCSEL Driver in
90-nm CMOS Technology
Jhe-Yue Li, Jau-Ji Jou, Tien-Tsorng Shih, Chien-Liang Chiu, and Jian-Chiun Liou
11:40 12:00
T6.4
A 6.5-GHz Digitally-Controlled Oscillator with Supply Sensitivity of 0.0071%fDCO/1%-VDD
Jichao Huang, Weixin Gai, Liangxiao Tang, Linqi Shi, Tong Zhao, and Xing Zhang
National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan
Peking University, Beijing, China
Beida (Binhai) Information Research, Tianjin, China
9
T7: Device Modeling and Simulation 1 August 4, Thursday (14:00 – 15:50)
Venue: Room XXX
Session Chair: TBA
14:00 14:30
Inv.10 Advanced Techniques in TCAD Simulation of GaN HEMT
Simon Li, Gary Dolny, and Yue Fu
(Invited)
Crosslight Inc., Canada
14:30 14:50
T7.1
Linearity Performance of Gate Metal Engineered (GME) Omega Gate-Silicon
Nanowire MOSFET: A TCAD Study
Arshiya Vohra, Neha Gupta and Rishu Chaujar
Delhi Technological University, India
14:50 15:10
T7.2
A New Quasi-3-D Subthreshold Behavior Model for Short-Channel Double-Fin
Multi-Channel FETs (DFMcFETs)
Te-Kuang Chiang
National University of Kaohsiung, Kaohsiung, Taiwan
15:10 15:30
T7.3
Comparison of Ultra Low Power Junctionless and Inversion-Mode FinFETs
With Compact Model
Zebang Guo and Yan Wang
Tsinghua University, Beijing, China
15:30 15:50
T7.4
Modeling of Threshold Voltage for Operating Point Using Industry Standard
BSIM-IMG Model
Pragya Kushwaha, Rahul Agarwal, Harshit Agarwal, Yogesh Singh Chauhan, Sourabh
Khandelwal, Juan P. Duarte, Yen-Kai Lin, Huan-Lin Chang and Chenming Hu
Indian Institute of Technology Kanpur, India
University of California Berkeley, USA
T8: Device Physics and Reliability August 4, Thursday (14:00 – 15:30)
Venue: Room XXX
Session Chair: TBA
14:00 14:30
Inv.11 Low-frequency Noise Characterization and Its Applications for CMOS
Technologies
James Ma
(Invited)
ProPlus Design Solutions, USA
14:30 14:50
T8.1
Sneak-path Based Test for 3D Stacked One-Transistor-N-RRAM Array
Qiang Zhang, Xiaole Cui, Xiaoyan Xu, Xin’an Wang, Zhi Ma, Shengming Zhou
Peking University Shenzhen Graduate School, Shenzhen, China
National Integrated Circuit Design Shenzhen Industrial Center, Shenzhen, China
14:50 15:10
T8.2
Consistent Model of NBTI with Low Drain Voltage in P-MOSFETs
Shucheng Gao, Chenyue Ma, and Xinnan Lin
Peking University Shenzhen Graduate School, Shenzhen, China
10
T9: Novel Device 1 August 4, Thursday (14:00 – 15:50)
Venue: Room XXX
Session Chair: TBA
14:00 14:30
Inv.12 Novel Electronic and Photonic Properties of Low-Symmetry Two-Dimensional
Materials
He Tian, Huan Zhao, Han Wang
(Invited)
University of Southern California, USA
14:30 14:50
T9.1
Quantum Correction in AlGaN/GaN Transistor Simulations Using Modified
Local Density Approximation (MLDA)
Hiu Yung Wong, Oleg Penzin, Nelson Braga and R. V. Mickevicius
Synopsys, Inc., Mountain View, CA, USA
14:50 15:10
T9.2
Metamateral Enhanced Folded Waveguide Slow Wave Structure for Millimeter
Wave Traveling Wave Tube Amplifier
Jin Qin, Lei Zhang, and Liu Chao
Tsinghua University, Beijing, China
Tianjin New Power Source Ltd., Tianjin, China
15:10 15:30
T9.3
A De-Embedding Procedure Based on TRL Calibration Algorithm for ThroughSilicon-Vias
Ke Wu，Qing Ma, Zheyao Wang
Tsinghua University, Beijing, China
15:30 15:50
T9.4
Modeling of Source/Drain Access Resistances and their Temperature
Dependence in GaN HEMTs
Sudip Ghosh, Sheikh Aamir Ahsan, Yogesh Singh Chauhan, and Sourabh Khandelwal
Indian Institute of Technology Kanpur, India
University of California Berkeley, USA
11
T10: Memory Technology & Dielectrics August 4, Thursday (16:10 – 17:40)
Venue: Room XXX
Session Chair: TBA
16:10 16:40
Inv.13 A Sub-0.5V Charge Pump Circuit for Resistive RAM (ReRAM) Enabled Low
Supply Voltage Nonvolatile Logics and Nonvolatile Processors
Meng-Fan Chang, Shin-Jang Shen, Yi-Lun Lu, Yih-Shan Yang, Jui-Yu Hung, Che-Wei
Wu, Yan-Bing Jhang, Weihow Chen, and Han-Wen Hu
(Invited)
National Tsing Hua University, Taiwan
16:40 17:00
T10.1 A Low Power Selector-less Crossbar Array with Complementary ResistiveSwitching Memory
Jang-Woo Ryu and Kee-Won Kwon
Sungkyunkwan University, Suwon, Korea
Samsung Electronics Co.,Ltd., Hwaseong, Korea
17:00 17:20
T10.2 Improved Electrical Properties of GaAs MOS Capacitor by Using HfLaON
Passivation Layer
L.N. Liu, H.W. Choi, P.T. Lai, and J.P. Xu
The University of Hong Kong, Hong Kong
Huazhong University of Science and Technology, Wuhan, China
17:20 17:40
T10.3 High Reliability Multi-Channel Output Voltage Switch For Multitime
Programmable Memory in Standard CMOS Process
Jiasong Wang, Jiancheng Li, Hongyi Wang, Cong Li, and Zhipeng Luo
National University of Defense Technology, Changsha, China
T11: Nano-Electronics 2 August 4, Thursday (16:10 – 17:40)
Venue: Room XXX
Session Chair: TBA
16:10 16:40
Inv.14 Silicene: The Ultimate Atomic Scaling of Silicon
Deji Akinwande
(Invited)
University of Texas at Austin, USA
16:40 17:10
Inv.15 Effects of Fin Width on Performance and Reliability for N- and P-type FinFETs
Wen-Kuan Yeh, Wenqi Zhang, Hung Shih, and Yi-Lin Yang
(Invited)
National University of Kaohsiung, Taiwan
National Pingtung University, Taiwan
National Kaohsiung Normal University, Taiwan
17:10 17:30
T11.1 Improved Characteristics for OTFT with HfO2 Gate Dielectric by Using
Chlorinated Indium Tin Oxide Gate Electrode
W.M. Tang , M.G. Helander, M.T. Greiner, Z.H. Lu, and W.T. Ng
The Hong Kong Polytechnic University, Hong Kong
University of Toronto, Canada
T12: Data Converters 1 August 4, Thursday (16:10 – 17:40)
Venue: Room XXX
Session Chair: TBA
12
16:10 16:40
Inv.16 Design Considerations for Power Efficient Continuous-time Delta-Sigma
Converters
Shanthi Pavan
(Invited)
Indian Institute of Technology Madras, India
16:40 17:00
T12.1 A Fast-Locking All-Digital Phased-Locked Loop with a 1 ps Resolution Timeto-Digital Converter Using Calibrated Time Amplifier and Interpolation
Digitally-Controlled-Oscillator
Hsing-Chien Chu, Yi-Hsiang Hua, and Chung-Chih Hung
17:00 17:20
T12.2 A Low Power Switching Method with Variable Comparator Reference Voltage
and Split Capacitor Array for SAR ADC
Xiaoyong He, Junliang He, Min Cai, Zhaoxia Jing
National Chiao Tung University, Taiwan
South China University of Technology, China
13
August 5, 2016 (Friday)
F1: Data Converters 2 August 5, Friday (8:30 - 9:50)
Venue: Room XXX
Session Chair: TBA
8:30 8:50
F1.1
An 11b 40MS/s Charge Pump and Comparator Based Pipelined ADC with
Variable Reset Voltages
Daxiang Li, Xian Tang, Zhongyi Fu, Jiangpeng Wang, Basak Debajit, and Kong-Pang Pun
The Chinese University of Hong Kong, Hong Kong
Tsinghua University Shenzhen, China
8:50 9:10
F1.2
An Op-amp Free SAR-VCO Hybrid ADC with Second-Order Noise Shaping
Yu Hou, Zhijie Chen, Masaya Miyahara, and Akira Matsuzawa
Tokyo Institute of Technology, Japan
9:10 9:30
F1.3
A 12Bit 800MS/s time-interleaving pipeline ADC in 65nm CMOS
Meng Ni, Fule Li, Jia zhou, Zhijun Wang, Chun Zhang, Xian Tang and Zhihua Wang
Tsinghua University, China
9:30 9:50
F1.4
Design and Implement of Baseband Circuits for a Wireless Automatic Meter
Reading Application
Guanghua Wu, Hong Chen, Yanyi Meng, Xitian Longy, Kun Yangy, Xueping Jiangy
Tsinghua University, Beijing, China
State Grid Smart Grid Research Institute, State Grid Corporation of China, Beijing, China
F2: Analog 2 August 5, Friday (8:30 - 9:50)
Venue: Room XXX
Session Chair: TBA
8:30 8:50
F2.1
A Current Detecting Circuit for Linear-mode InGaAs APD Arrays
Zheng Lixia, Weng Ziqing, Wu Jin, Zhu Tianyou, Wang Meiya and Sun Weifeng
Southeast University, Wu-xi, China
Southeast University, Nanjing, China
8:50 9:10
F2.2
Cross-Coupled Gm-Boosting Technique for Two-Stage Miller-Compensated
Amplifier
Ming Wai Lau, Cheuk Ho Hung, Ka Nang Leung, and Wang Ling Goh
The Chinese University of Hong Kong, Hong Kong
Nanyang Technological University, Singapore
9:10 9:30
F2.3
Chip Design of Low-Power and Dual-Band Voltage Control Oscillator
Wen-Cheng Lai, Sheng-Lyang Jang and Yu-Cheng Chuang
National Taiwan University of Science and Technology, Taiwan
9:30 9:50
F2.4
Design of High-PSRR Current-Mode Bandgap Reference with Improved
Frequency Compensation
Lidan Wang, Chenchang Zhan, Shuangxing Zhao, Guigang Cai, Yang Liu, Qiwei Huang
and Guofeng Li
Southern University of Science and Technology, Shenzhen, China
Nankai University, Tianjin, China
Sogang University, Seoul, Korea
14
F3: HV and Power Devices 2 August 5, Friday (8:30 - 9:50)
Venue: Room XXX
Session Chair: TBA
8:30 8:50
F3.1
Implantation-Free 2-Step Junction Termination Extension with 2-Space
Modulated Buffer Trench Regions for UHV 4H-SiC GTO
Cai-Neng Zhou, Yan Wang, Gang Dai, Jun-Tao Li
Tsinghua University, Beijing, China
Microsystem and Terahertz Research Center/China Academy of Engineering Physics, Mianyang,
China
8:50 9:10
F3.2
Etched Junction Termination Extension with Floating Guard Rings and Middle
Rings for Ultrahigh-Voltage 4H-SiC PiN Diodes
Xiao Zou, Ruifeng Yue, Yan Wang
Tsinghua University, Beijing, China
9:10 9:30
F3.3
Enhancement-Mode AlGaN/GaN MOS-HEMT on Silicon With Ultrathin Barrier
and Diluted KOH Passivation
Li-Cheng Chang, Tzung-Han Tsai, Yi-Hong Jiang, and Chao-Hsin Wu
National Taiwan University, Taipei, Taiwan
9:30 9:50
F3.4
Modeling of Kink-Effect in RF Behaviour of GaN HEMTs using ASM-HEMT
Model
Sheikh Aamir Ahsan, Sudip Ghosh, Sourabh Khandelwaly and Yogesh Singh Chauhan
Indian Institute of Technology Kanpur, India
University of California, Berkeley, USA
15
F4: Device Modeling and Simulation 2 August 5, Friday (10:10 – 12:00)
Venue: Room XXX
Session Chair: TBA
10:10 10:40
Inv.17 Material Characterization and Device Simulation of GeSn Alloys for Field-Effect
Transistors Applications
Renrong Liang, Lei Liu, Jing Wang, and Jun Xu
(Invited)
Tsinghua University, China
10:40 11:00
F4.1
Numerical Simulations of Nonlinear Current-Voltage Characteristics of NanoChannels: A Benchmark Study
Lingzi Guo, Xin Zhu, Xingye Zhang, Zhi Ye, Yang Liu
Zhejiang University, Hangzhou, China
11:00 11:20
F4.2
Modeling Current Reduction for PCM Cell with Thermal Buffer Layer
Yihan Chen, Mansun Chan, Xinnan Lin, and Zhitong Song
The Hong Kong University of Science and Technology, Hong Kong
Peking University, Shenzhen, China
Shanghai Institute of Microsystem and Information Techechnolgy, China
11:20 11:40
F4.3
Modeling of GeOI and Validation with Ge-CMOS Inverter Circuit using BSIMIMG Industry Standard Model
Harshit Agarwal, Pragya Kushwaha, Yogesh S. Chauhan, Sourabh Khandelwal, Juan P.
Duarte, Yen-Kai Lin, Huan-Lin Chang, Chenming Hu, Heng Wu and Peide D. Ye
Indian Institute of Technology Kanpur, India
University of California Berkeley, USA
Purdue University, USA
11:40 12:00
F4.4
Predictive Effective Mobility Model for FDSOI Transistors using Technology
Parameters
Pragya Kushwaha, Harshit Agarwal, Yogesh S. Chauhan, Mandar Bhoir, Nihar R.
Mohapatra, Sourabh Khandelwal, Juan P. Duarte, Yen-Kai Lin, Huan-Lin Chang and
Chenming Hu
Indian Institute of Technology Kanpur, India
Indian Institute of Technology Gandhinagar, India
University of California Berkeley, USA
F5: Sensors, Imagers and MEMS 2 August 5, Friday (10:10 – 12:00)
Venue: Room XXX
Session Chair: TBA
10:10 10:40
Inv.18 Highly Sensitive and Functional Photodetectors based on Silicon-On-Insulator
Hiroshi Inokawa
(Invited)
Shizuoka University, Japan
10:40 11:00
F5.1
3D Stacked Image Sensor with Simultaneous Global Shutter and Rolling
Shutter Readout Operation
Toru Kondo, Yoshiaki Takemoto, Kenji Kobayashi, Mitsuhiro Tsukimura, Naohiro
Takazawa, Hideki Kato, Shunsuke Suzuki, Jun Aoki, Haruhisa Saito, Yuichi Gomi, Seisuke
Matsuda, and Yoshitaka Tadaki
Olympus Corporation R&D Division, Hachioji, Tokyo, Japan
16
11:00 11:20
F5.2
Bidirectional Multi-Level Spatial Coded Exposure CMOS Capacitance TIA
Pixel Design
Yi Luo, Shahriar Mirabbasi, and Derek Ho
University of British Columbia, Canada
City University of Hong Kong, Hong Kong
11:20 11:40
F5.3
MoO3 Nanoplatelets based Schottky Diode for Low-Noise Sensors in Harsh
Environments
Tianding Chen, Weiting Kuo, Jerry Yu, Derek Ho
City University of Hong Kong, Hong Kong
11:40 12:00
F5.4
Hydrogen Sensor Based on Pentacene Thin-Film Transistor
Bochang Li, P. T. Lai, and Wing Man Tang
The University of Hong Kong, Hong Kong
The Hong Kong Polytechnic University, Hong Kong
F6: Power Management ICs August 5, Friday (10:10 – 12:10)
Venue: Room XXX
Session Chair: TBA
10:10 10:40
Inv.19 A New Generation 3D Printed On-Chip Energy Storage Devices
Hui Ying Yang
(Invited)
Singapore University of Technology and Design, Singapore
10:40 11:00
F6.1
A CMOS High Frequency Pulse Width Modulation Integrated Circuit
Osman Ulas Sahin, and Fatih Kocer
ASELSAN, Inc., Turkey
Middle East Technical University, Turkey
11:00 11:20
F6.2
A 0.048ns/°C Delay Generator With Variation Self-Calibration Structure(VSCS)
for HVIC
Yangyang Lu, Yuming Wang, Kuo Yu, Long Miao, Jing Zhu, Weifeng Sun
Southeast University, Nanjing, China
11:20 11:40
F6.3
A Compact Fast-Transient Charge-Pump Boost Converter Using Hysteretic
Compensated Techniques
Yuh-Shyan Hwang, Rong-Lian Shih and Jiann-Jong Chen, Yi-Tsen Ku, and Cheng-Chieh
Yu
National Taipei University of Technology, Taiwan
11:40 12:00
F6.4
A High-Efficient and Wide-Bandwidth Supply Modulator Using Power Switch
Controlled Technique
Tai-Wei Ke, Yuh-Shyan Hwang, and Jiann-Jong Chen, Yi-Tsen Ku, and Cheng-Chieh Yu
National Taipei University of Technology, Taiwan
17
Poster Session
August 4, Thursday (15:50 - 17:40)
Venue: Room XXX
Session Chairs: TBA
P1.
Barrier Height Modulation by Surface Morphology Control in Nanoclustered ZnO
Schottky Diodes for Sensor Applications
Yuet Ching Chan, Jerry Yu, and Derek Ho
City University of Hong Kong, Hong Kong
P2.
UV-Excited TiO2 Nanotube Formaldehyde Sensor for Room Temperature Operation
Kwai Yin Chau, Kwong Man Wai, Jerry Yu, Jiaqi Chen, Amine Bermak, and Derek Ho
City University of Hong Kong, Hong Kong
The Hong Kong University of Science and Technology
Hamad Bin Khalifa University, Qatar
P3.
A 4.95mW 114dB SNDR Delta-Sigma Modulator Based on SC circuits for Audio Chip
Hengdi Wu, Menglian Zhao†, Xiaolin Yang, Xiaobo Wu, Su Hanyang
Zhejiang University, Hangzhou, China
P4.
Mobility Variation and Threshold Voltage Shift Immunized Amorphous-Indium–Gallium–
Zinc-Oxide Pixel Circuit
Zhiqiang Liao, Hesheng Lin, Binjie Liu, Min Zhang
Peking University, Shenzhen, China
Shenzhen Thin Film Transistor and Advanced Display Lab, Shenzhen, China
P5.
Adjustable Duty Cycle ASK Demodulator for Passive UHF RFID Tags
Yi Miao, Jiancheng Li, Hongyi Wang Lei Cai, Yu Xiao, Li Yang, Miaoxia Zheng
National University of Defense Technology, Changsha, China
Xiangtan University, Xiangtan, China
P6.
A 16-channel 12-bit Rail-to-Rail Successive Approxmation Register ADC for AFEs
Yifan Jiang, Jianxiong Xi, Lenian He, Kexu Sun
Zhejiang University, Hangzhou, China
Southern Methodist University, Dallas, USA
P7.
A Floating High-Voltage Level Shifter Used in a Pre-charge Circuit for Large-size
AMOLED Displays
Fangfang Yang, Cuicui Wang, Hing-Mo Lam, Qiang Zhao, Jia Fan, Shengdong Zhang
Peking University, Shenzhen, China
Peking University, Beijing, China
P8.
An Asynchronous GFSK Demodulator for Automatic Meter Reading
Yuxuan Liu, Guanghua Wu, Hong Chen, Anping He
Tsinghua University at Beijing, China
Lanzhou University, Lanzhou City, China
P9.
Analysis of Multi-Measurement Techniques for High-Linearity Tapped Delay Line FPGA
Time-to-Digital Converters
Nan Guo and Derek Ho
City University of Hong Kong, Hong Kong
18
P10. A Low-Power Third-Order ΔΣ modulator Using Ring Amplifiers with Power-Saving
Technique
Alexis Gryta, Takuma Suguro, and Hiroki Ishikuro
Keio University, Yokohama, Japan
P11. A 0.6V Standard Cell Library in 40nm CMOS for Near-threshold Computing
Jintao Li, Bo Pang, Ming Liu, Hong Chen, Zhihua Wang
Tsinghua University, Beijing, China
Chinese Academy of Sciences Beijing, China
P12. A 0.32µW Physically Unclonable Fuction with BER < 1.18×10-5 Using Current Starved
Inverters
Yinxuan Lyu, Jianhua Feng, Hongfei Ye, Chunhua He and Dunshan Yu
Peking University, Beijing, China
Beida(Binhai) Information Research, Tianjin, China
No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China
P13. The Research of X-band GaAs SPDT Switch on Si CMOS
Lishu Wu, Yan Zhao, Hongchang Shen, Youtao Zhang and Tangsheng Chen
Nanjing Electronic Devices Institute, Nanjing, China
P14. Adjustable Lumped Impedance Mismatching Compensation Circuit
Xiaomeng Zhang and Saiyu Ren
Wright State University, Dayton, Ohio, USA
P15. 2.4GHz 20Mb/s FSK Receiver Front-End and Transmitter Modulation PLL Design for
Energy-Efficient Short-Range Communicaiton
Ranran Zhou, Yining Zhang, Woogeun Rhee, and Zhihua Wang
Tsinghua University, Beijing, China
P16. An Optimized CMOS Series-Parallel Coupled LC Quadrature Phase Oscillator
Sivaramakrishna Rudrapati, Sumit Emekar, Shalabh Gupta
Indian Institute of Technology Bombay, Mumbai, India
P17. Design of Novel Digital GFSK Modulation and Demodulation System for Short-range
Wireless Communication Application
Xitian Long, Xueping Jiang, Zhe Zheng, Guanghua Wu, Yanyi Meng, Hong Chen
State Grid Corporation, Beijing, China
Tsinghua University, Beijing, China
P18. Improved Reliability of High-Voltage VDMOS with Reduced Mask Layers Through
Optimized Edge Termination
Jen-HaoYeh, Yi-Rong Tu, Wan-Wen Tseng, Ming-Nan Chuaug, Pi-Feng Cheng, Chiung-Feng Chou,
Chih-Fang Huang
Leadtrend Technology Corporation, Hsinchu, Taiwan
National Tsing Hua University, Hsinchu, Taiwan
19
P19. Performance Metrics of Metal Oxide and Metal Sulfide Nanostructures for Hydrogen
Sensors
Jerry Yu, Ling Xi Liu, Derek Ho
City University of Hong Kong, Hong Kong
P20. Model of TCSPC Fluorescence Lifetime Analysis Microsystem using Monte Carlo
Methods
Liping Wei, Wenrong Yan, Yi Tian, and Derek Ho
City University of Hong Kong, Hong Kong
P21. Simple leakage Current and 1=f Noise Expressions for Polycrystalline Silicon Thin-Film
Transistors
Hongyu He, Wanling Deng, Yuan Liu, Xinnan Lin, Xueren Zheng, and Shengdong Zhang
University of South China, Hengyang, China
Peking University Shenzhen Graduate School, Shenzhen, China
Jinan University, Guangzhou, China
China Electronic Produce Reliability and Environmental Testing Research Institute, Guangzhou, China
China University of Technology, Guangzhou, Chin
P22. A Vision Chip Architecture for Image Recognition Based on Improved Convolutional
Neural Network
Jijia Guo, Jipan Huang, Xin’an Wang, Haifang Lu
Peking University Shenzhen Graduate School, Shenzhen, China
P23. An Algorithm of Training Sample Selection for Integrated Circuit Device Modeling
Based on Artificial Neural Networks
Zhiyuan Zhang, Xinnan Lin, Xiaole Cui, Lining Zhang
Peking University, Shenzhen Graduate School, Shenzhen, China
Hong Kong University of Science and Technology, Hong Kong
P24. The Effects of O2 Annealing on the Characteristics of IGMO-based UV Photodetector
Y.Y. Zhang, L.X. Qian, Z.H. Wu and X.Z. Liu
University of Electronic Science and Technology of China, Chengdu, China
P25. Thermal Resistance Extraction of InP/InGaAs DHBT by Pulse and CW Measurement
Bin Niu, Junling Xie, Wei Cheng, Yuan Wang, Long Chang, Yan Sun, Huaixin Guo
Nanjing Electronic Devices Institute, Nanjing, China
P26. Analysis of Factors in Phase Array Antenna and RF Units on System Performance of
the OFDM PHY Of IEEE 802.11ad Standard
Jin Qin, Lei Zhang, Li Zhang and Yan Wang
Tsinghua University, Beijing, China
P27. A 14-bit Column-Parallel Two-Step SA ADC with On-Chip Scaled Reference Voltages
Self-Calibration for CMOS Image Sensor
Jingyuan Chen, Jianxiong Xi, Lenian He, Kexu Sun, and Ning Xie
Zhejiang University, Hangzhou, China
Southern Methodist University, Dallas, Texas, USA
Chinese Academy of Sciences, Shanghai, China
20
P28. Tube Size Effect of Anodized Alumnium Oxide(AAO) Template Based Gas Sensor
Huayu Hu, Zhipeng Kang, Xiaojin Zhao, Xiaofang Pan
Shenzhen University, Shenzhen, China
P29. Glove-Based Hand Gesture Recognition Sign Language Translater using Capacitive
Touch Sensor
Kalpattu S. Abhishek, Lee Chun Fai Qubeley, and Derek Ho
City University of Hong Kong, Hong Kong
P30. Improved Hydrogen-Sensing Performance of Pd/ WO3/SiC Schottky Ddiode by La
Doping
Y. Liu, P. T. Lai, and W.M. Tang
The University of Hong Kong, Hong Kong
The Hong Kong Polytechnic University, Hong Kong
21