BC807-25
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
FEATURES
* Ldeally suited for automatic insertion
* Epitaxial planar die construction
* Complementary NPN type available(BC817)
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
BASE
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
0.055(1.40)
0.047(1.20)
1
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1
0.019(2.00)
0.071(1.80)
O
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.118(3.00)
0.110(2.80)
3
2
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGS ( @ TA = 25 C unless otherwise noted )
VALUE
UNITS
Collector-base voltage
CHARACTERISTICS
SYMBOL
VCBO
-50
V
Collector-emitter voltage
VCEO
-45
V
Emitter-base voltage
V
VEBO
-5
Collector current-continuous
IC
-0.5
A
Collector dissipation
PC
0.3
W
TJ,Tstg
-55 -150
Junction and storage temperature
o
C
o
ELECTRICAL CHARACTERISTICS ( @ TA = 25 C unless otherwise noted )
SYMBOL
MIN
MAX
UNITS
Collector-base breakdown voltage (IC= -10mA, IE=0)
CHARACTERISTICS
VCBO
-50
-
V
Collector-emitter breakdown voltage (IC= -10mA, IB=0)
VCEO
-45
-
V
Emitter-base breakdown voltage (IE= -1mA, IC=0)
VEBO
-5
-
V
Collector cut-off current (VCB= -45V, IE=0)
ICBO
-
-0.1
mA
Collector cut-off current (VCE= -40V, IB=0)
ICEO
-
-0.2
mA
Emitter cut-off current (VEB= -4V, IC=0)
IEBO
-
-0.1
mA
hFE(1)
160
400
-
Collector-emitter saturation voltage (IC= -500mA, IB= -50mA)
VCE(sat)
-
-0.7
V
Base-emitter saturation voltage (IC= -500mA, IB= -50mA)
VBE(sat)
-
-1.2
V
Transition frequency (VCE= -5V, IC= -10mA, f= 100MHZ)
fT
100
-
MHZ
DC current gain (VCE= -1V, IC= -100mA)
MARKING
NOTE: “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
5B
2007-3
RATING AND CHARACTERISTICS CURVES ( BC807-25)
400
1000
fT, GAIN BANDWIDTH PRODUCT(MHZ)
Pd , POWER DISSIPATION (mW)
See Note 1
300
200
100
0
0
-VCE=5.0V
1.0V
100
10
200
100
O
TA=25 C
f=20MHZ
1
-IC, COLLECTOR CURRENT (mA)
Figure2 Gain-Bandwidth Product vs
Collector Current
0.4
1000
-IC / - IB= 10
Typical
limits
O
at TA=25 C
hFE, DC CURRENT GAIN
-VCESAT, COLLECTOR SATURATION VOLTAGE (V)
Figure1 Power Derating Curve
0.5
0.3
0.2
O
25 C
O
150 C
0.1
-VCE= 1V
O
150 C
O
25 C
O
-50 C
100
O
-50 C
0
0.1
10
1
100
10
1000
-Ic,COLLECTOR CURRENT(mA)
0.1
Figure3 Collector Sat Voltage vs Collector Current
3.2
2.8
2
1.8
1.6
1.4
1.2
0.8
200
0.6
0.4
100
0
-IB= 0.2mA
0
1
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
10
1000
100
-Ic, COLLECTOR CURRENT (mA)
Figure4 DC Current Gain vs Collector Current
0.35
2.4
400
300
1
100
-Ic, COLLECTOR CURRENT (mA)
500
-Ic, COLLECTOR CURRENT (mA)
1000
100
10
TSB, SUBSTRATE TEMPERATURE( C)
O
Figure5 Typical Emitter-Collector Characteristics
2
0.3
80
0.25
60
0.2
0.15
40
0.1
20
0
-IB= 0.05mA
0
10
-VCE, COLLECTOR - EMITTER VOLTAGE (V)
20
Figure6 Typical Emitter-Collector Characteristics
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
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