Order this document
by BF393/D
SEMICONDUCTOR TECHNICAL DATA
NPN Silicon
COLLECTOR
3
2
BASE
1
EMITTER
1
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
300
Vdc
Collector – Base Voltage
VCBO
300
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25°C
PD
625
5.0
mW
mW/°C
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5
12
Watts
mW/°C
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
3
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction to
Ambient
Characteristic
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
300
—
300
—
6.0
—
—
0.1
—
0.1
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB =0)
V(BR)CEO
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
Emitter – Base Breakdown Voltage
(IE = 100 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = 6.0 Vdc, IC = 0)
IEBO
1. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
Vdc
Vdc
Vdc
µAdc
µAdc
(Replaces BF392/D)
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
BF393
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
25
40
—
—
—
2.0
—
2.0
50
—
—
2.0
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
hFE
Collector – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VCE(sat)
Base – Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc)
VBE(sat)
—
Vdc
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current Gain — Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 20 MHz)
Common Emitter Feedback Capacitance
(VCB = 60 Vdc, IE = 0, f = 1.0 MHz)
2
fT
MHz
Cre
pF
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BF393
200
hFE, DC CURRENT GAIN
VCE = 10 Vdc
TJ = +125°C
100
25°C
50
–55°C
30
20
1.0
2.0
3.0
5.0
7.0
10
IC, COLLECTOR CURRENT (mA)
20
30
50
100
70
100
C, CAPACITANCE (pF)
50
Ceb
20
10
5.0
Ccb
2.0
1.0
0.2
0.5
1.0 2.0
5.0 10
20
50
VR, REVERSE VOLTAGE (VOLTS)
100
200
f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz)
Figure 1. DC Current Gain
100
70
50
30
20
10
1.0
Figure 2. Capacitances
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
500
IC, COLLECTOR CURRENT (mA)
TJ = 25°C
1.2
V, VOLTAGE (VOLTS)
2.0
Figure 3. Current–Gain — Bandwidth Product
1.4
1.0
0.8
VBE(sat) @ IC/IB = 10
0.6
VBE(on) @ VCE = 10 V
0.4
0.2
0
1.0
TJ = 25°C
VCE = 20 V
f = 20 MHz
VCE(sat) @ IC/IB = 10
2.0
3.0
5.0 7.0 10
20 30
IC, COLLECTOR CURRENT (mA)
50
70 100
Figure 4. “On” Voltages
Motorola Small–Signal Transistors, FETs and Diodes Device Data
200
100
10 µs
100 µs
TA = 25°C
1.0 ms
TC = 25°C
50
100 ms
20
CURRENT LIMIT
THERMAL LIMIT
(PULSE CURVES @ TC = 25°C)
SECOND BREAKDOWN LIMIT
10
5.0
2.0
1.0
CURVES APPLY
BELOW RATED VCEO
0.5
0.5
1.0
2.0
5.0
10
20
MPSA43
MPSA42
50
100
200
500
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 5. Maximum Forward Bias
Safe Operating Area
3
BF393
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
D
J
X X
G
H
V
C
1
SECTION X–X
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
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4
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Motorola Small–Signal Transistors, FETs and Diodes DeviceBF393/D
Data