MMDT5551
NPN/NPN Multi-Chip Transistor
FEATURES
• Ideal for Medium Power Amplification and Switching
• Complementary PNP Type Available(MMDT5401)
MECHANICAL DATA
• Case: SOT-363 Plastic
• Case material: “Green” molding compound, UL
flammability classification 94V-0, (No Br. Sb. CI)
• Lead Free in RoHS 2002/95/EC Compliant
Maximum Ratings @ TA = 25℃
Characteristic
Symbol
Value
Unit
VCBO
VCEO
VEBO
IC
PC
TJ
TSTG
180
160
6
200
200
150
-55~+150
V
V
V
mA
mW
℃
℃
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
Electrical Characteristics @ TA = 25℃ unless otherwise specified
Characteristic
Test Condition
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
IC=100µA,IE=0
VCBO
180
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
IC=1mA,IB=0
IE=10µA,IC=0
VCEO
VEBO
160
6
V
V
Collector-base cut-off current
VCB=120V,IE=0
ICBO
0.05
uA
Emitter-base cut-off current
VEB=4V,IC=0
IEBO
0.05
uA
VCE=5V,IC=1mA
hFE1
80
VCE=5V,IC=10mA
hFE2
100
VCE=5V,IC=50mA
hFE3
30
IC=10mA,IB=1mA
VCE(sat)1
0.15
V
IC=50mA,IB=5mA
VCE(sat)2
0.2
V
IC=10mA,IB=1mA
VBE(sat)1
1
V
IC=50mA,IB=5mA
VCE=10V,IC=10mA,
f=100MHz
VCB=10V,IE=0,f=1MHz
VCE=5V, IC=0.2mA,
RS=1KΩ,f =1kHz
VBE(sat)2
1
V
300
MHz
Cob
6
pF
NF
8
dB
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise Figure
fT
100
300
REV. 3, Jan-2013, KSTR09
SOT-363 Outline Dimension
Symbol
A
B
C
D
G
H
J
K
N
S
Device Marking :
Device P/N
Marking code
MMDT5551
G1
Dimension In Millimeters
Min
Max.
1.89
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0.20 REF
2.00
2.20
Electrical characteristic curves
Fig.1 Power Dissipation vs. Ambient Temperature
Fig.2 Collector Emitter Saturation Voltagevs. Collector
Current
Fig.3 DC Current Gain vs. Collector Current
Fig.4 Base Emitter Voltage vs. Collector Current
Fig.5 Gain Bandwidth Product vs.Collector Current
Legal Disclaimer Notice
MMDT5551
Important Notice and Disclaimer
LSC reserves the right to make changes to this document and its products and specifications
at any time without notice. Customers should obtain and confirm the latest product
information and specifications before final design, purchase or use.
LSC makes no warranty, representation or guarantee regarding the suitability of its products
for any particular purpose, nor does LSC assume any liability for application assistance or
customer product design. LSC does not warrant or accept any liability with products which
are purchased or used for any unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property rights of
LSC.
LSC products are not authorized for use as critical components in life support devices or
systems without express written approval of LSC.
LITE-ON
SEMICONDUCTOR
Issued Date: Jan’1, 2013
New Marking Rule Notification
Range: In order to have well management in process control, the
new marking rule is applied to small signal device including
Switching Diode, Transistor and Schottky Diode.
Package: SOT-363
Device Code
Pb free
“
Odd Year
1
2
3
4
5
6
7
8
9
T
V
C
“ or “
Even Year
E
F
H
J
K
L
N
P
U
X
Y
Z
”: Traceability Code
Month Code