Power Device In-house Seminar
"Power Devices"
Industrial use IGBT MODULE
1
Index
Index
1. House style type name
2. Technical development overview
3. IGBT
z
NF, A, NFH, MPD series
2
1. House style type name
3
Kinds
Kinds of
of Mitsubishi
Mitsubishi power
power module
module
CM：IGBT module
FM:MOSFET module
PM：IPM (Intelligent Power Module)
PS：ASIPM (Application Specific Intelligent Power Module)
DIP-IPM (Dual In-Line Package Intelligent Power Module)
TM：Thyristor module
RM：Diode module
SR､FD：Rectifire/First recovery diode(High power)
CR､FT：Rectifire thyristor/First switching thyristor(High power)
FG：GTO thyristor(Gate Turn-off Thyristor)
FGC：GCT thyristor(Gate Commutated Turn-off Thyristor)
GCU：GCT thyristor unit
Others:
HVIC(M639xx/M817xx)
Transistor array(M545xx､M5466x､M638xx)
Semiconductor sensor(MPSxxxx､MASxxxx)
4
Structure
Structure of
of type
type name
name（（IGBT
IGBT module
module））
CM 100 T U −12 NF
Kinds of main chip（series name as usual） ：F, NF, NFH,etc.
ex. LPT-IGBT:K, LPT-IGBT+First1700V-FWDi:KA
Rated voltage Vces of IGBT
"−" mean to 1/50, "−0", "non−"mean to 1/10
(ex.−12：600V)。
"−" with or without means industrial or EV in IGBT module
Other specification of package, and so on. One or more character.
Internal circuit
R：7in1(with brake)
T：6in1(3-phase inverter)
B：4in1(Full Bridge inverter)
D：Dual
H：Single
E2：IGBT(P-side)+FRDi
E3：Chopper,Brake(IGBT：N-side)
Rated collector current of main IGBT chip (ex.100：Ic=100A)
Traditionally it shows the index of application, now changing to the one of IEC
IGBT module in Mitsubishi(C means IGBT, M means case type module)
This part have been bankruptcy, by many local definitions.
So it is better to learn each name instead of system.
See follows page.
5
Lot
Lot number
number
S
5
1
AA1
C
-001
Serial No. (ex. for sample)
Parallel rank symbol
Product serial number
Month Jan.∼Sept.：1∼9
Oct:O(not zero),Nov:N,Dec:D
Year (1)
UL ID code
6
2. Technical development overview
7
Loss
Loss reduction
reduction history
history of
of inverter
inverter
Conditions： Vcc= 240V
Io = 9A
fc = 3kHz
PF = 0.8
12
10.2W
10
Loss (W)
8
FWDiLoss
8.6W
Tr
SWoff
Loss
（for A/C IPM/DIP-IPM ）
7.1W
6.65W
6
4
2
IGBT
SWoff
Loss
Tr
DC Loss
IGBT
DC Loss IGBT
SWon
Loss
Tr
SWon
Loss
0
QM20TD-9B
PM20CEF060
PM20CTM060
PS21245
Bip.transistor
2nd Gen.IGBT
3rd Gen. IGBT
4th Gen. IGBT
8
Size
Size history
history of
of inverter
inverter (0.75KW)
(0.75KW)
100
100
Mass%（1981=100%）
90
Source：JEMA"growing inverter"'1999
80
70
61.4
Mass (%)
60
50
36.5
40
30
20
16.8
8.9
10
8.9
0
1981
Topics
1984
1987
1991
1994
1998 Fiscal year
ASIPM & 32 bit MCU
IPM & ASIC MCU
IGBT module & DSP
Highβ・Bip. Transistor module & 16 bit MCU
Bip. Transistor module
9
Sales
Sales promotion
promotion device
device for
for Industrial
Industrial use
use
Market
Inverter
NF series
IGBT
New
Design In
Mega Power
Dual
Medical use
IH
1700Vseries
Compete
Econo+
UPS
Elevator
NFH series
CSTBT
H-series
replace
High power
−
−
−
for ac690V
30k-60KHz
Fresh market
−
10
TM
CSTBT
CSTBTTM:: New
New 5th
5th Generation
Generation IGBT
IGBT chip
chip
‹feature:
"CSTBTTM" chip
„ New
Better Eoff-VCE(sat) trade off
CSTBT:Carrier Stored Trench-Gate Bipolar Transistor
„ LPT
(Light Punch Through) is used in 1200V
Good paralleling characteristic
„ PCM
(Plugging Cell Merged)
Short circuit capability/ Lower driving power 11
Hole
Hole injection
injection of
of IGBT
IGBT
Power
MOSFET
IGBT
n+ emitter
n+ emitter
n- layer
n- layer
n+ buffer layer
n+ buffer layer
p + substrate
Existent electron
Injected hole（plus charge）
Attracted electron
12
TM
CSTBT
CSTBTTM structure
structure CSTBTTM
trench
IGBT
p base
n+ emitter
n+ emitter
n barred layer
Here is
n- layer
Hole
Density
n- layer
n+ buffer layer
n+ buffer layer
p + substrate
p + substrate
Emitter
CSTBTTM
Collector
Improve
Tradeoff
Conventiona
l
IGBT
Low
VCE(sat) vs. Eoff
High
Eoff
advantage :
Stored charge is wiped by
the depression layer at turn off.
Then it can reduce Vce(sat)
without increasing Esw(off)
Trench
IGBT
CSTBTTM
VCE(sat)
13
NF
NF // A
A // NFH
NFH series
series Trade
Trade off
off
„
NF / A series trade off is decide Structure
„
No lifetime controlled chip
NFH series trade off decide by Injection
14
TM
CSTBT
CSTBTTM Chip
Chip Structure
Structure
15
PCM
PCM (Plugging
(Plugging Cell
Cell Merged)
Merged)
‹Control IC(sat) by chip itself
‹Decrease input capacitance
PCM-CSTBT
p base
Plugged Cell
n+ emitter
n barred layer
n- layer
n+ buffer layer
p + substrate
Item
Trench
IGBT
CSTBTTM
CSTBTTM
(Full gate)
with PCM
VCE(sat)
Low
Very Low
Low
Cies
Large
Large
Small
SCSOA
Narrow
Narrow
Wide
16
Cross
Cross Point
Point
LPT-CSTBT
PT-TIGBT
250
250
200
200
398K
150
2
Jc [A/cm ]
Jc [A/cm 2 ]
298K
398K
Cross Point
100
50
150
298K
100
50
LPT-CSTBT(298K)
PT-TIGBT(298K)
LPT-CSTBT(398K)
PT-TIGBT(398K)
0
0
0.0
1.0
2.0
VCE(sat) [V]
3.0
4.0
0.0
1.0
2.0
3.0
4.0
VCE(sat) [V]
17
Comparison
Comparison of
of chip
chip (1200V)
(1200V)
Chip for IGBT module
3rd
Planer
4th
Trench
5th
CSTBT
2.4V
1.9V
1.8V
0.4
1
0.5
Short Circuit
≧ 10μｓ
≧ 2μｓ
≧ 10μｓ
(without RTC)
(with PCM)
Cross Point
2
0.6
0.4
VCE(sat)
Cies
(4th=1)
(Rated Current=1)
18
TM
Expansion
of
CSTBT
Expansion of CSTBTTM
Standard IPM
H series replace
L series (6/7 pack)
(Low noise, Compact)
NF series (Dual)
NF series
(6/7 pack)
A series
(1200V, Dual/Single)
CSTBT
High Current IPM
HP-IPM
(High Performance)
High Current
Quick Turn-off
MPD (Dual)
NFH series (Dual)
19
IGBT
IGBT Module
Module Road
Road map
map
CY 2002 2003
NF series
(1) Dual
(2) MPD*
2004
2006
NF-Advance
(LPT thin FZ wafer)
NF series
6 & 7 pack
A series
A series
Dual
Single
MPD*-series
1700V/1000A
IGBT
2005
* MPD: Mega Power Dual
NFH series
High Frequency IGBT
( 30 ~ 60kHz )
High Frequency IGBT
( 100kHz )
Matrix converter
RB-IGBT
RC-IGBT
20
55ththGeneration
IGBT
GenerationTM
IGBTModules
Moduleswith
with
new
newCSTBT
CSTBTTMTechnology
Technology:: Concept
Concept
NF series
Concept
Optimized
for:
A series
• Best performance ∆T(j-f) Æ one rank
better compared to competition
• Superior performance ∆T(j-f) to
European Trench IGBT
• Conventional H-series Rth(j-c) and
Rth(c-f) definition
• European Rth(j-c) and Rth(c-f)
definition
• Full package compatible to H series
• Cost optimized package size
• drop-in replacement of H series in
existing inverter designs
• performance & cost competitive
solution for new inverter designs
21
Common
Common features
features of
of A
A and
and NF
NF series
series
Features:
1.
By using the latest CSTBT Chip technology:
•
Low Vce(sat), low Esw(on), low Esw(off)
•
High short circuit robustness (without RTC)
•
Reduced gate capacitance:gate drive power similar to planar IGBTs
2.
Low internal package inductance ( except A series single )
3.
Excellent thermal resistance by using AlN isolation substrate
4.
Improved temperature cycling capability ∆Tc (solder fatigue) by controlling the
solder thickness between base-plate and AlN-substrate
5.
Significantly improved power cycling capability ∆Tj (wire bond fatigue) by new
wire bonding technology
Target Applications:
AlN:Aluminium Nitride
1.
Motor control (General purpose inverters, Servo drives, Elevators, etc.)
2.
Power supply (CVCF, UPS, etc.)
3.
Kinds of industrial use power electric equipments (kW to MW)
22
Package
Package comparison
comparison NF
NF with
with A
A series
series (Dual)
(Dual)
H series (3rd)
Silicone Gel
Case
Epoxy Resin
Aluminum Wire
Semiconductor
Base plate
Ceramic
NF/A series (5th)
Silicone Gel
Cover
Solder
Case
Aluminum Wire
Base plate
Semiconductor
ceramic
Without solder
Comparison of Inductance NF/A:H=1:2
23
Improved
Improvedtemperature
temperaturecycling
cyclingcapability
capability(solder
(solderfatigue)
fatigue)
Chip
Solder a
1000000
NF series
substrate
Solder b
Fig 1:Conventional H series soldering
process: Solder b thickness may vary by
tilting
Solder a
Solder b
substrate
Base plate
Cycle Number
ΔTc=55℃
Base plate
Chip
＞6 times at
100000
10000
H series
1000
Not a failure point, but a starting
point of erosion into the area
under the chip.
100
0 10 20 30 40 50 60 70 80 90 100
ΔTc （℃）
Wire bump
Fig 2:A/NF series:Solder b thickness is
kept uniform by „wire bump“ spacers
Fig 3:Temperature cycling capability
24
Improved
Improved Power
Power Cycle
Cycle
1,000,000,000
NF series
100,000,000
100 times at
ΔTj=30℃
10,000,000
Cycle
F series
1,000,000
H series
100,000
Failure rate;1%
10,000
1,000
1
10
∆Tj [℃]
100
1000
25
Comparison
Comparison with
with competitors
competitors
1,000,000,000
NF series
100,000,000
Cycle
10,000,000
F series
S
1,000,000
H series
100,000
Failure rate;1%
E
10,000
1,000
1
10
∆Tj [℃]
100
1000
26
3.1 NF series -Dual-
27
NF
NF series
series IGBT
IGBT Modules
Modules
Features:
1) Best thermal performance ∆T(j-f): one rank better for
easier replacement from H series
2) Conventional H series Rth(j-c) and Rth(c-f) definition
3) Full package compatibility with H series
Target Applications:
1) Drop-in replacement of H series in existing
inverter designs. (It may need some Rg adjustment.)
2) High performance power conversion designs
28
HHseries
seriesPackage
Packagecompatible
compatible(NF
(NFseries,
series,Dual)
Dual)
Lefts are H series, Rights are NF series
29
H
H series
series Package
Package compatible
compatible
CM300DY-24H
CM300DY-24NF
H series
NF series
30
IDC Comparison with other IGBT
DC collector current (A)
1000
900
Mitsubishi(NF series)
800
Company A(IGBT3)
700
Company B(Trench)
NF-series is offering > 1 rank better DCperformance compared to competition
Company C
600
500
400
300
* Calculation value
200
at Tc=80℃
100
0
0
100
200
300
400
Rated current (A)
500
600
700
31
IIDC
Comparison with other IGBT
DC Comparison with other IGBT
IDC is DC current calculated by following equation
for comparison with other manufacture IGBT.
Tc’+Rth(j-c’)xVCE(sat)(@IDC)xIDC =Tj(max)
Rth(j-c’):Thermal resistance between junction and
case directly under the chip
Tc’
:Case temperature directly under the chip
32
Ipeak
Ipeakvs.
vs.fc
fc
(CM150DY-24NF
(CM150DY-24NFvs.
vs.150A/100V
150A/100VIGBT
IGBTModule
Moduleof
ofcompetitors)
competitors)
200
CM150DY-24NF
Company C
Ipeak (A)
150
Company A
Trench
100
Conditions:
Vcc=600V
VGE=±15V
Tj=125ºC
RG=typical value
( of each module)
P.F.=0.8
∆T(j-c)=20ºC
IGBT part
3Ø PWM Control (Sinusoidal)
50
0
1
10
fc (kHz)
100
33
NF
NF series
series IGBT
IGBT Module
Module ((Dual
Dual))
Loss
Losscomparison
comparisonto
toHHseries
series
fc=10kHz, Io=71Arms
Power loss (W)
150
100
SW loss
50
16%
reduce
DC loss
0
CM150DY-24NF
CM150DY-24H
34
NF
NF series
series vs.
vs. H
H series
series Comparison
Comparison
Dual type
Series
(Design rule)
1200V
VCE(sat)
600V
Driving Power
(Relative ratio）
Short Circuit
Capability
H series
NF series
Planer(3um) CSTBT(0.8um)
2.4Ｖ
2.0Ｖ
2.1V
1.7V
0.75
1
≧１０μｓ
≧１０μｓ
35
Comparison
Comparison of
of drive
drive power
power (Qg)
(Qg)
Series
Type Name
Qg (μC)
(0V to 15V)
H series (3rd)
CM200DY-24H
1
F series (4th)
CM200DU-24F
2.2
NF series (5th)
CM200DY-24NF
1.35
36
Compatibility
Compatibility about
about desat
desat short
short circuit
circuit detection
detection
Tj=25℃
VGE=15V
F series (without RTC)
Ic
F series (with RTC)
NF-series
Vce become higher from lower
over current (NF series)
Vce
37
IGBT
IGBT Tc
Tc vs.
vs. Ipeak
Ipeak
Conditions: Vcc=600V, VGE= ±15V
,Tj=125°
C, fc=15kHz, PF=0.8,
IGBT part, 3 φ
PWM (sinusoidal)
130
Tc limit (℃)
120
CM200DY-24NF
110
C-company
(200A/1200V)
100
A-company
(200A/1200V)
(trench)
90
80
B-company
(200A/1200V)
37kW 45kW 55kW
70
60
0
50
100
150
Ipeak (A)
200
250
38
Line
Line up
up (NF
(NF series
series Dual)
Dual)
100A
150A
200A
300A
400A
600A
600V
−
CM150DY
-12NF
CM200DY
-12NF
CM300DY
-12NF
CM400DY
-12NF
CM600DY
-12NF
1200V
CM100DY
-24NF
CM150DY
-24NF
CM200DY
-24NF
CM300DY
-24NF
CM400DY
-24NF
CM600DU
-24NF
39
NF
NF series
series IGBT
IGBT Module
Module Dual
Dual (600V)
(600V)
150A
200A
300A
400A
94×48 108×62
600A
110x80
NF
108x62
94x48
H
94x48
108x62
U/F
40
NF
NF series
series IGBT
IGBT Module
Module Dual
Dual (1200V)
(1200V)
100A
150A
200A
94×48 108×62
94x48
108x62
300A
400A
600A
110×80
140×130
NF
H
U/F
110x80
----
94x48
108x62
110x80
140×130
41
3.2 A series -European model-
42
What
What is
is A
A series
series ??
„
Strategy product to compete to Eupec in Europe
„ IEC standard base.
„ Use one rank up IGBT chip from NF series by
special chip selection.
„ Small change from NF series. (Not exact same.)
„ Price down by changing definition which based
upon & cutting a margin.
„ Only 1200V line-up
43
A
A series
series IGBT
IGBT Module
Module
Features:
1) Superior thermal performance ∆T(j-f) versus
European Trench IGBT
2) Competitive cost structure versus European
Trench IGBT
3) Datasheets using the European style definition of
thermal resistances Rth(j-c) and Rth(c-f) Æ direct
data comparison with competition possible
Target:
Performance & cost competitive solution (vs.
European Trench IGBT) for new inverter designs
44
Superior
Superior∆∆T(j-f)
T(j-f)Performance:
Performance:
AAseries
seriesvs.
vs.European
EuropeanTrench
TrenchIGBT
IGBT
Thermal Equivalent
Circuit:
P(IGBT)=Pss + Psw
IGBT Junction
Temperature Tj
Rth(j-c)
Module Case
Temperature Tc
P(IGBT) is calculated under
identical sinewave PWM
inverter application conditions:
Vcc=600V
fc=5kHz and 15kHz
Tj(max)=150℃
Power Factor PF=0.8
∆T(j-f) = P(IGBT) × [(Rth(j-c) + Rth(c-f)]
Rth(c-f)
Heatsink („Fin“)
Temperature Tf
Rth(f-a)
Ambient
Temperature Ta
Rth(j-c) and Rth(c-f) specification values of
A series are defined under identical to
company „E“ conditions: the Tc and Tf
reference points are located just below the
IGBT chips
45
Ideal possible case temp., Tc (℃) Tc
Tc vs.
vs. Ipeak
Ipeak comparison
comparison (200A/1200V
(200A/1200V IGBT)
IGBT)
130
CM200DY-24A
120
Conditions;
Vcc=600V, Tj=125℃
P.F.=0.8, fc=10kHz
110
Ideal possible case temp. is
calculated at the conditions of
Tj=125℃, by the average loss
simulation of sinusoidal PWM
operation.
It is not show an actual
possible Tc but show a
relation for comparison ,
because it is not considered
the temperature ripple.
100
Company A
90
Company
80
70
C
Company B
60
0
50
100
150
200
250
Sinusoidal peak output current Io(peak) (A)
46
Ideal Heatsink Temperature Capability Tf (℃)
Superior
Superior∆∆T(j-f)
T(j-f)Performance:
Performance:
AAseries
seriesvs.
vs.European
EuropeanTrench
TrenchIGBT
IGBT
150
140
Conditions：fc=15kHz, PF=0.8
Tj=150℃
130
∆T(j-f) = P(av)(IGBT) x [ Rth(j-c) + Rth(c-f)]
120
110
100
CM300DY-24A
90
80
Company A (300A/1200V)
70
60
50
0
50
100
150
200
250
300
350
400
450
500
Inverter output current Io/A(rms)
Note: Tf= 150℃ - ∆T(j-f)
47
AAseries
seriesIGBT
IGBTModules
Modules::with
withEuropean
EuropeanRth(j-c)
Rth(j-c)and
andRth(c-f)
Rth(c-f)definition
definition
H series definition:
A series definition:
(Mitsubishi traditional method)
(according to Draft IEC 747-15)
Tj
Tj
IGBT-chip
Top
AlN-substrate
view:
Cu-Baseplate
Tc reference point
Side
Tj
view:
Tf reference point
Tc reference point
Heatsink
Tf reference point
Tj
2mm
ÆLarger Rth-values for
conservative thermal design
Æ easy access to Tc and Tf
reference points
Ø 2mm
Rth(j-c)= ∆T(j-c)/P
Rth(c-f)= ∆T(c-f)/P
Æ smaller, but more exact Rthvalues for cost optimised design
Ædifficult access to Tc and Tf
48
Package
Packageoutline
outline
AAseries
seriesvs.
vs.European
EuropeanTrench
TrenchIGBT
IGBT
1200V Dual Modules:
100A
150A
200A
300A
400A
108×62
94×48 600A
110×80
A
108×62
“E”
“S”
108×62
49
A
A series
series line
line up
up
All VCES=1200V
100A
150A
200A
300A
400A
600A
Single
−
−
−
−
CM400HA
-24A
CM600HA
-24A
CM600HB
-24A
Dual
CM100DY
-24A
CM150DY
-24A
CM200DY
-24A
CM300DY
-24A
CM400DY
-24A
CM600DY
-24A
Note: Single use just H series package.
Dual use NF series structure package.
50
55thth Generation
Generation IGBT
IGBT Modules
Modules with
with
new
new CSTBT
CSTBT Technology:
Technology: Concept
Concept
A series
Concept
• Superior performance ∆T(j-f)
to European Trench IGBT
• Best performance ∆T(j-f) Æ one rank
better compared to competition
• European Rth(j-c) and Rth(c-f)
definition
• Conventional H series Rth(j-c) and
Rth(c-f) definition
• Cost optimized package size
Optimized
for:
NF series
• performance & cost
competitive solution for new
inverter designs
• Full package compatible to H series
• drop-in replacement of H series
in existing inverter designs
51
3.3 NF series - 6 / 7 pack -
52
NF
NF series
series IGBT
IGBT module
module (6
(6 // 77 pack)
pack)
Compact PKG (use IPM package parts)
„ Screw terminals (Main electrode) &
Connector (Signal electrode)
„ 75A∼200A/600V : 7 pack & 6 pack,
50A∼200A/1200V : 7 pack & 6 pack
„
Note: Chips are not a same one of Dual.
53
Line
Line up
up NF
NF series
series 6/7
6/7 pack
pack
7 600V
in
1 1200V
6 600V
in
1 1200V
50A
75A
100A
150A
200A
−
CM75RL
-12NF
CM100RL
-12NF
CM150RL
-12NF
CM200RL
-12NF
CM50RL
-24NF
CM75RL
-24NF
CM100RL
-24NF
CM150RL
-24NF
CM200RL
-24NF
−
CM75TL
-12NF
CM100TL
-12NF
CM150TL
-12NF
CM200TL
-12NF
CM50TL
-24NF
CM75TL
-24NF
CM100TL
-24NF
CM150TL
-24NF
CM200TL
-24NF
54
3.5 MPD series
55
Mega
Mega Power
Power Dual
Dual series
series
（（High
Highcurrent
currentIGBT
IGBTmodule
module））
Type Name
Vces
Ic
CM900DU-24NF
1200V
900A
CM1400DU-24NF 1200V 1400A
150×131mm
„
„
CM1000DU-34NF 1700V 1000A
Feature
„ Apply CSTBT(LPT)
„ Compact:60% of CM1000HA-24H, for base plate area
Applications:High power UPS, Inverter, etc.
56
Features
Features of
of the
the structure
structure in
in MPD
MPD
Connector
Three holes
Step
terminal
Flat top nut
Same M5 hole & Main terminal,
Enough distance
Into the hole
57
Image
Image of
of the
the outside
outside wiring
wiring
AC
output
U
V
W
Signals
N
P
DC input
58
3.6 1700V series
59
Line
Line up
up of
of NF
NF series
series IGBT
IGBT Module
Module
NF series 1700V dual are under development
Recognized the UL as a module.
Limit:No correspond to the high reliability request as traction.
No correspond to the water cooling.
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KA
KA series
series (for
(for AC690V)
AC690V) IGBT
IGBT module
module
Features
z
1700V IGBT in F series Package
z
Low VCE(sat) by LPT structure
z
First recovery FWDi
z
Isolation voltage＝AC3500V
Limit：Couldn't recognized the UL as a module.
No correspond to the high reliability request as traction.
No correspond to the water cooling.
61
Line
Line up
up of
of KA
KA series
series IGBT
IGBT Module
Module
Devices
Vces Ic
（V ） (A)
6 in 1
1700
2 in1
Type Name
PKG
50
CM50TU -34KA
75
CM75TU -34KA
100
CM100DU -34KA
150
CM150DU -34KA
200
CM200DU -34KA
C
300
CM300DU -34KA
D
400
CM400DU -34KA
Circuit
A
B
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3.4 NFH series
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High
High frequency
frequency IGBT
IGBT Module
Module NFH
NFH series
series
① Quick turn-off CSTBT
；Target switching frequency 30kHz∼60kHz
② Low impedance package
③ High power cycle Conditions：
Vcc＝600Ｖ, Ic=150A, Tj=125℃
50A/div
Eoff @400K
A-guy
B-guy
1.9V
quarter from
standard
5V
Vce(sat) @400K
Trade-off Eoff vs. VCE(sat)
Rg=2Ω, Vge=±15V
Inductive load hard turn off
CM150DY-24H
CM150DU-24NFH
50ns/div
Comparison of turn-off waveform
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Target
Target applications
applications
Transformer load≒turn-on:Resistive load
turn-off:Inductive load
① Single phase half bridge
② Single phase half bridge
Out put
Out put
G/A
G/A
G/A
Vcc
G/A
Vcc
G/A
NFH IGBT module
G/A
NFH IGBT module
Application for output frequency=switching frequency
65
Total
Total loss
loss vs.
vs. Vce(sat)
Vce(sat) trade-off
trade-off
1200V/100A
Hard SW 30kHz
600
100A
30A
10A
400
100A
30A
10A
800
loss(W)
loss(W)
500
Hard SW 60kHz
1000
300
200
600
400
200
100
0
0
0
5
Vce(sat) (V)
10
0
5
Vce(sat) (V)
10
Conditions：Full-bridge, rectangular, duty=50%, Loss/device
Loss become quite high if Vce(sat) is lower than 3V
=Standard 1200V IGBT is not suitable for high freq.
66
In
(1200V/300A)
In Exam.
Exam. Appli.
Appli. (1200V/300A)
Vce(sat)
Company
Some medical application
Esw(off)
125℃
125℃
Hard switching
Static loss
Dynamic loss
(Esw(off))
sum
NF
2.0 V
33.0 mJ
45W
840W
885W
NFH
5.0 V
7.5 mJ
116W
156W
272W
A-company
3.9 V
15.0 mJ
96W
290W
386W
B-company
4.8 V
15.5 mJ
121W
311W
432W
※loss is for one device.
Wave form of this medical application
operate
300A
200A
rest
100A
0A
50ms
200ms
250ms
50ms: while operation, wave form is
as right.
200ms: rest the operation
-100A
-200A
-300A
9.76ms
- I(D1)
9.78ms
IC(SW1)
9.80ms
9.82ms 9.84ms
Time
10us
50us（20kHz）
9.86ms
9.88ms 9.90ms
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Line-up
Line-up of
of High-freq.
High-freq. IGBT
IGBT module
module
100A
600V
Dual
1200V
Dual
150A
200A
300A
400A
CM100DUS CM150DUS CM200DU CM300DU CM400DU
-12F
-12F
-12NFH
-12NFH
-12NFH
CM100DU
-24NFH
CM150DU
-24NFH
600A
-
CM200DU CM300DU CM400DU CM600DU
-24NFH
-24NFH
-24NFH
-24NFH
68
Line
Lineup
upof
ofIGBT
IGBTModule
Module
Rated
Current(A)
50
75
100
150
200
300
400
(450)
600
900
1200 1400
(1000)
Single
600V
Dual
6or7 pack
Single
1200V
Dual
6or7 pack
Single
1400V
Dual
6or7 pack
Single
1700V
Dual
6or7 pack
H series
NFH series
NF series
Mega Power Dual series
KA series
A series
Note; H & KA series : 6 pack , NF series: 7 pack
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