IRF9310PbF-1
HEXFET® Power MOSFET
VDS
-30
RDS(on) max
V
4.6
(@VGS = -10V)
mΩ
RDS(on) max
6.8
(@VGS = -4.5V)
Qg (typical)
ID
(@TA = 25°C)
58
nC
-20
A
S
1
8
D
S
2
7
D
S
3
6
D
G
4
5
D
SO-8
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF9310PbF-1
SO-8
⇒
Standard Pack
Form
Tube/Bulk
Tape and Reel
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable Part Number
Quantity
95
4000
IRF9310PbF-1
IRF9310TRPbF-1
Absolute Maximum Ratings
Max.
Parameter
VDS
Drain-to-Source Voltage
-30
VGS
± 20
ID @ TA = 25°C
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
-16
IDM
Pulsed Drain Current
-160
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
f
f
Units
V
-20
c
2.5
1.6
Linear Derating Factor
0.02
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
A
W
W/°C
°C
Notes  through … are on page 2
1
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Conditions
Min. Typ. Max. Units
BVDSS
Drain-to-Source Breakdown Voltage
-30
–––
–––
ΔΒVDSS/ΔTJ
RDS(on)
Breakdown Voltage Temp. Coefficient
–––
–––
0.020
3.9
–––
4.6
5.8
-1.8
6.8
-2.4
Static Drain-to-Source On-Resistance
V
VGS = 0V, ID = -250μA
V/°C Reference to 25°C, ID = -1mA
VGS = -10V, ID = -20A
mΩ
VGS = -4.5V, ID = -16A
e
e
VGS(th)
Gate Threshold Voltage
–––
-1.3
ΔVGS(th)
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-5.8
–––
–––
–––
V
VDS = VGS, ID = -100μA
––– mV/°C
VDS = -24V, VGS = 0V
-1.0
μA
VDS = -24V, VGS = 0V, TJ = 125°C
-150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
–––
–––
–––
–––
-100
100
nA
gfs
Qg
Forward Transconductance
Total Gate Charge
39
–––
–––
58
–––
–––
S
nC
Qg
Qgs
Gate-to-Source Charge
–––
–––
110
17
165
–––
nC
–––
–––
28
2.8
–––
–––
Turn-On Delay Time
Rise Time
–––
–––
25
47
–––
–––
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
65
70
–––
–––
Ciss
Input Capacitance
–––
5250
–––
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
–––
–––
1300
880
–––
–––
h
Total Gate Charge h
Qgd
RG
td(on)
tr
h
Gate-to-Drain Charge h
Gate Resistance h
VGS = -20V
VGS = 20V
VDS = -10V, ID = -16A
VDS = -15V, VGS = -4.5V, ID = - 16A
VGS = -10V
VDS = -15V
ID = -16A
Ω
ns
VDD = -15V, VGS = -4.5V
ID = -1.0A
e
RG = 1.8Ω
See Figs. 20a &20b
VGS = 0V
pF
VDS = -15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Diode Characteristics
c
d
Parameter
Typ.
Max.
Units
–––
–––
630
-16
mJ
A
Conditions
Min. Typ. Max. Units
IS
Continuous Source Current
ISM
(Body Diode)
Pulsed Source Current
–––
–––
-2.5
–––
–––
-160
–––
–––
-1.2
MOSFET symbol
A
c
(Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
–––
71
Qrr
Reverse Recovery Charge
–––
12
showing the
integral reverse
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
f
g
G
p-n junction diode.
e
V
TJ = 25°C, IS = -2.5A, VGS = 0V
107
ns
TJ = 25°C, IF = -2.5A, VDD = -24V
18
nC
di/dt = 100A/μs
Thermal Resistance
RθJL
RθJA
D
S
e
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
‚ Starting TJ = 25°C, L = 4.9mH, RG = 25Ω, IAS = -16A.
ƒ Pulse width ≤ 400μs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board.
Rθ is measured at TJ of approximately 90°C.
† For DESIGN AID ONLY, not subject to production testing.
2
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
1000
1000
TOP
100
BOTTOM
10
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
≤60μs PULSE WIDTH
Tj = 150°C
-ID, Drain-to-Source Current (A)
-ID, Drain-to-Source Current (A)
≤60μs PULSE WIDTH
Tj = 25°C
100
1
0.1
BOTTOM
-2.3V
0.01
1
0.1
1
10
100
0.1
-V DS, Drain-to-Source Voltage (V)
10
100
Fig 2. Typical Output Characteristics
1000
1.6
RDS(on) , Drain-to-Source On Resistance
(Normalized)
-I D, Drain-to-Source Current (Α)
1
-V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
T J = 150°C
10
T J = 25°C
VDS = -10V
≤60μs PULSE WIDTH
1.0
ID = -20A
VGS = -10V
1.4
1.2
1.0
0.8
0.6
1
2
3
4
5
-60 -40 -20 0
Fig 3. Typical Transfer Characteristics
100000
Fig 4. Normalized On-Resistance vs. Temperature
14.0
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
-VGS, Gate-to-Source Voltage (V)
ID= -16A
C oss = C ds + C gd
10000
Ciss
Coss
Crss
1000
20 40 60 80 100 120 140 160
T J , Junction Temperature (°C)
-V GS, Gate-to-Source Voltage (V)
C, Capacitance(pF)
VGS
-10V
-4.5V
-3.5V
-3.1V
-2.9V
-2.7V
-2.5V
-2.3V
10
-2.3V
100
12.0
VDS= -24V
VDS= -15V
10.0
8.0
6.0
4.0
2.0
0.0
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
3
TOP
www.irf.com © 2014 International Rectifier
0
25
50
75
100
125
150
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
1000
-I D, Drain-to-Source Current (A)
-I SD, Reverse Drain Current (A)
1000.00
100.00
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
100
T J = 150°C
10.00
T J = 25°C
1.00
1msec
10
1
T A = 25°C
0.10
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
0.1
-VSD, Source-to-Drain Voltage (V)
1
10
100
-VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.5
-V GS(th), Gate threshold Voltage (V)
20
15
-I D, Drain Current (A)
10msec
Tj = 150°C
Single Pulse
VGS = 0V
10
5
2.0
ID = -100μA
1.5
1.0
0
25
50
75
100
125
-75 -50 -25
150
0
25
50
75 100 125 150
T J , Temperature ( °C )
T A , Ambient Temperature (°C)
Fig 10. Threshold Voltage vs. Temperature
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Thermal Response ( Z thJA ) °C/W
100
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
1
0.1
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T A
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
RDS(on), Drain-to -Source On Resistance ( mΩ)
RDS(on) , Drain-to -Source On Resistance (mΩ)
12
ID = -20A
10
8
TJ = 125°C
6
4
TJ = 25°C
2
2
4
6
8
10
12
14
16
18
14
12
10
VGS = -4.5V
8
6
VGS = -10V
4
2
20
0
20
40
80
Fig 13. Typical On-Resistance vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
2700
ID
TOP
-1.8A
-2.7A
BOTTOM -16A
2100
800
Single Pulse Power (W)
2400
1800
1500
1200
900
600
600
400
200
300
0
1E-5
0
25
50
75
100
125
150
1E-4
1E-3
Starting T J , Junction Temperature (°C)
D.U.T *
Driver Gate Drive
+
‚
-
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
di/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
VDD
+
-
Re-Applied
Voltage
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Body Diode
VDD
Forward Drop
Inductor
Current
Inductor Curent
Ripple ≤ 5%
Reverse Polarity of D.U.T for P-Channel
P.W.
Period
*

•
•
•
•
1E+0
VGS=10V
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
„
D=
Period
P.W.
-
1E-1
Fig 16. Typical Power vs. Time
+
ƒ
RG
1E-2
Time (sec)
Fig 14. Maximum Avalanche Energy vs. Drain Current
*
100 120 140 160
-I D, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
EAS , Single Pulse Avalanche Energy (mJ)
60
ISD
* VGS = 5V for Logic Level Devices
Fig 17. Diode Reverse Recovery Test Circuit for P-Channel HEXFET® Power MOSFETs
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
Id
Vds
Vgs
L
VCC
DUT
0
20K
1K
Vgs(th)
SS
Qgodr
Fig 18a. Gate Charge Test Circuit
I AS
D.U.T
RG
IAS
-V
GS
-20V
tp
Qgs2 Qgs1
Fig 18b. Gate Charge Waveform
L
VDS
Qgd
VDD
A
DRIVER
0.01Ω
tp
V(BR)DSS
15V
Fig 19b. Unclamped Inductive Waveforms
Fig 19a. Unclamped Inductive Test Circuit
VDS
RD
td(on)
VGS
RG
t d(off)
tf
VGS
D.U.T.
-
+
10%
V DD
-VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 20a. Switching Time Test Circuit
6
tr
www.irf.com © 2014 International Rectifier
90%
VDS
Fig 20b. Switching Time Waveforms
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
SO-8 Package Outline(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
H
E
1
2
3
0.25 [.010]
4
A
MIN
.0532
.0688
1.35
1.75
A1 .0040
e
e1
8X b
0.25 [.010]
A
MAX
0.25
.0098
0.10
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
1.27 BAS IC
.025 BAS IC
0.635 BAS IC
e1
6X
MILLIMET ERS
MAX
A
5
INCHES
MIN
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
K x 45°
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
FOOT PRINT
8X 0.72 [.028]
NOTES :
1. DIMENS IONING & TOLERANCING PE R AS ME Y14.5M-1994.
2. CONT ROLLING DIME NS ION: MILLIMETE R
3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ].
4. OUTLINE CONF ORMS TO JEDEC OUTLINE MS -012AA.
6.46 [.255]
5 DIMENS ION DOE S NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006].
6 DIMENS ION DOE S NOT INCLUDE MOLD PROTRUS IONS .
MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010].
7 DIMENS ION IS THE LENGTH OF LEAD FOR S OLDERING T O
A S UBS T RATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information
EXAMPLE: T HIS IS AN IRF7101 (MOSFET)
INT ERNATIONAL
RECTIFIER
LOGO
XXXX
F 7101
DAT E CODE (YWW)
P = DIS GNATES LEAD - FREE
PRODUCT (OPT IONAL)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
A = AS S EMBLY S ITE CODE
LOT CODE
PART NUMBER
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014
IRF9310PbF-1
SO-8 Tape and Reel (Dimensions are shown in milimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
Moisture Sensitivity Level
(per JEDE C JE S D47F
SO-8
RoHS compliant
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 30, 2014