IRF7304PbF-1
HEXFET® Power MOSFET
VDS
-20
RDS(on) max
(@VGS = -4.5V)
Qg
ID
(@TA = 25°C)
V
0.09
Ω
22
nC
-4.3
A
S1
1
8
D1
G1
2
7
D1
S2
3
6
D2
G2
4
5
D2
SO-8
Top View
Features
Benefits
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
Base Part Number
Package Type
IRF7304PbF-1
SO-8
⇒
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF7304PbF-1
IRF7304TRPbF-1
Absolute Maximum Ratings
Parameter
I D @ TA = 25°C
I D @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ, TSTG
Max.
10 Sec. Pulsed Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
Units
-4.7
-4.3
-3.4
-17
2.0
0.016
±12
-5.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
Thermal Resistance Ratings
Parameter
RθJA
1
Maximum Junction-to-Ambient„
Typ.
Max.
Units
–––
62.5
°C/W
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November 14, 2013
IRF7304PbF-1
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(ON)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
Min. Typ. Max. Units
Conditions
-20 ––– –––
V
VGS = 0V, ID = -250µA
––– -0.012 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.090
VGS = -4.5V, ID = -2.2A ƒ
Ω
––– ––– 0.140
VGS = -2.7V, ID = -1.8A ƒ
-0.70 ––– –––
V
VDS = VGS, ID = -250µA
4.0 ––– –––
S
VDS = -16V, ID = -2.2A
––– ––– -1.0
VDS = -16V, VGS = 0V
µA
––– ––– -25
VDS = -16V, VGS = 0V, TJ = 125°C
––– ––– -100
VGS = -12V
nA
––– ––– 100
VGS = 12V
––– ––– 22
ID = -2.2A
––– ––– 3.3
nC VDS = -16V
––– ––– 9.0
VGS = -4.5V, See Fig. 6 and 12 ƒ
––– 8.4 –––
VDD = -10V
––– 26 –––
ID = -2.2A
ns
––– 51 –––
RG = 6.0Ω
––– 33 –––
RD = 4.5Ω, See Fig. 10 ƒ
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD
Internal Drain Inductance
LS
Internal Source Inductance
–––
6.0
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
610
310
170
–––
–––
–––
IGSS
–––
4.0
D
–––
nH
Between lead tip
and center of die contact
pF
VGS = 0V
VDS = -15V
ƒ = 1.0MHz, See Fig. 5
G
S
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
IS
ISM
VSD
trr
Qrr
ton
Min. Typ. Max. Units
–––
–––
-2.5
–––
–––
-17
–––
–––
–––
–––
56
71
-1.0
84
110
A
V
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
S
TJ = 25°C, IS = -1.8A, VGS = 0V ƒ
TJ = 25°C, IF = -2.2A
di/dt = 100A/µs ƒ
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
‚ ISD ≤ -2.2A, di/dt ≤− 50A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
2
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November 14, 2013
IRF7304PbF-1
100
100
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
10
1
-1.5V
20μs PULSE WIDTH
TJ = 25°C
A
0.1
0.01
VGS
- 7.5V
- 5.0V
- 4.0V
- 3.5V
- 3.0V
- 2.5V
- 2.0V
BOTTOM - 1.5V
TOP
-ID , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
0.1
1
10
10
1
-1.5V
20μs PULSE WIDTH
TJ = 150°C
0.1
0.01
100
0.1
Fig 1. Typical Output Characteristics
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
-ID , Drain-to-Source Current (A)
TJ = 150°C
1
VDS = -15V
20μs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
A
100
Fig 2. Typical Output Characteristics
100
TJ = 25°C
10
-VDS , Drain-to-Source Voltage (V)
-VDS , Drain-to-Source Voltage (V)
10
1
5.0
A
I D = -3.6A
1.5
1.0
0.5
VGS = -4.5V
0.0
-60
-40
-20
0
20
40
60
80
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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A
100 120 140 160
November 14, 2013
IRF7304PbF-1
10
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
-VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1500
Ciss
1000
Coss
Crss
500
0
1
10
100
A
I D = -2.2A
VDS = -16V
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
-VDS , Drain-to-Source Voltage (V)
10
15
20
A
25
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
100
OPERATION IN THIS AREA LIMITED
BY RDS(on)
10
-II D , Drain Current (A)
-ISD , Reverse Drain Current (A)
5
TJ = 150°C
TJ = 25°C
1
VGS = 0V
0.1
0.3
0.6
0.9
1.2
-VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
A
1.5
10
1ms
1
TA = 25 °C
TJ = 150 °C
Single Pulse
1
10ms
10
-VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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November 14, 2013
100
IRF7304PbF-1
V DS
V GS
5.0
D.U.T.
RG
-ID , Drain Current (A)
4.0
RD
-
+
V DD
-4.5 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
3.0
Fig 10a. Switching Time Test Circuit
2.0
VDS
90%
1.0
0.0
25
50
75
100
125
TC , Case Temperature ( °C)
10%
VGS
150
td(on)
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
0.02
1
PDM
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.0001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.001
0.01
0.1
1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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November 14, 2013
100
IRF7304PbF-1
Current Regulator
Same Type as D.U.T.
50KΩ
QG
-4.5 V
QGS
.2μF
12V
.3μF
D.U.T.
QGD
+VDS
VGS
VG
-3mA
IG
Charge
Fig 12a. Basic Gate Charge Waveform
6
ID
Current Sampling Resistors
Fig 12b. Gate Charge Test Circuit
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November 14, 2013
IRF7304PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
ƒ
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
‚
-
-
„
+
**

RG
+
• dv/dt controlled by RG
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS*
-
*
V DD
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
[VGS=10V ] ***
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
[VDD]
Forward Drop
Inductor Curent
Ripple ≤ 5%
[ ISD ]
*** VGS = 5.0V for Logic Level and 3V Drive Devices
Fig 13. For P-Channel HEXFETS
7
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November 14, 2013
IRF7304PbF-1
SO-8 Package Outline
Dimensions are shown in milimeters (inches)
D
DIM
B
5
A
8
6
7
6
5
H
E
1
2
3
0.25 [.010]
4
A
e
e1
8X b
0.25 [.010]
MIL L IMET ER S
MAX
MIN
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 B AS IC
1.27 B AS IC
MAX
.025 B AS IC
0.635 B AS IC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
e1
6X
INCHE S
MIN
K x 45°
A
C
y
0.10 [.004]
A1
8X L
8X c
7
C A B
F OOT PR INT
NOT E S :
1. DIME NS IONING & T OL E R ANCING PE R AS ME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROL L ING DIME NS ION: MIL L IME T E R
3. DIME NS IONS AR E S HOWN IN MIL L IME T E RS [INCHE S ].
4. OU T L INE CONF OR MS T O JE DE C OU T L INE MS -012AA.
5 DIME NS ION DOE S NOT INCL U DE MOL D PROT R U S IONS .
MOL D PR OT RU S IONS NOT T O E XCE E D 0.15 [.006].
6.46 [.255]
6 DIME NS ION DOE S NOT INCL U DE MOL D PROT R U S IONS .
MOL D PR OT RU S IONS NOT T O E XCE E D 0.25 [.010].
7 DIME NS ION IS T H E L E NGT H OF L E AD F OR S OL DE RING T O
A S U B S T R AT E .
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E XAMPL E : T HIS IS AN IR F 7101 (MOS F E T )
INT E RNAT IONAL
R E CT IF IE R
L OGO
XXXX
F 7101
DAT E CODE (YWW)
P = DE S IGNAT E S L E AD-F R E E
PR ODU CT (OPT IONAL )
Y = L AS T DIGIT OF T HE YE AR
WW = WE E K
A = AS S E MB L Y S IT E CODE
L OT CODE
PART NU MB E R
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
November 14, 2013
IRF7304PbF-1
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
†
Qualification information
Industrial
Qualification level
(per JEDE C JE S D47F
Moisture Sensitivity Level
RoHS compliant
SO-8
††
guidelines)
MS L1
††
(per JEDE C J-S T D-020D )
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2013 International Rectifier Submit Datasheet Feedback
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