CREE
POWER
PRODUCTS
|
2014
IT’S A NEW DAY IN POWER ELECTRONICS
Cree, the silicon carbide expert, is leading the
power semiconductor revolution.
Cree, an innovator of semiconductors for power and wireless applications,
lighting-class LEDs and LED lighting fixtures, is revolutionizing several industries
with its use of innovative silicon carbide (SiC) materials that provide high
efficiency and reliability for numerous semiconductor applications.
Using SiC as a platform material to develop new power electronics devices
that surpass the status quo, Cree is revolutionizing the industry. Cree’s product
families include power-switching devices, radio-frequency/wireless devices, blue
and green LED chips, high-brightness LEDs, lighting-class power LEDs and LED
fixtures and lamps.
Founded in 1987 and headquartered in Durham, NC, Cree
(Nasdaq: CREE) is one of the
fastest growing semiconductor
producers in the world.
With almost 25 years of SiC and GaN wide band gap material growth,
wafer processing and device experience, Cree is one of the world’s leading
manufacturers of SiC-based devices for power electronics and is the world’s
largest pure-play wide band gap device manufacturer. Leveraging the energy
efficiency of its materials technology, Cree power devices can deliver reduced
size, higher frequency operation and increased efficiency for multiple applications, including power supplies, solar inverters and industrial motor drives.
In use worldwide since 2002, Cree’s SiC power devices are a proven platform
for delivering efficiency and reliability. Cree’s pioneering power electronics
technology meets the demand for more efficient, more reliable and smaller
power supplies.
Cree has the global reach and
distribution network to add
flexibility and support to serve
worldwide customer needs.
Cree has a technology roadmap for continuous improvement in SiC production
and cost reduction, as well as global reach and a strong IP portfolio to maintain
technology leadership. The time for SiC technology is now—don’t be left behind!
“Our power MOSFET is the industry’s
Cree has the manpower and
first ‘ideal’ SiC high voltage switching device—
support to satisfy the market
demand for higher energy
commercially available and ready for design-in
today. Together with our Schottky diodes, they
establish a new benchmark for SiC power
components that will replace silicon devices
in critical power electronics applications.”
CENGIZ BALKAS
CREE VICE PRESIDENT AND GENERAL MANAGER,
POWER AND RF
efficiency power devices and
DC/DC
DC/AC
to develop a broad portfolio
of power electronic products.
LIGHTING is one of many
mainstream applications that
will benefit from the adoption
of Cree SiC power devices. By
using the industry’s smallest SiC
package, lighting manufacturers
can reduce their overall system
size and cost while increasing
product performance, system
efficiency and reliability.
PC POWER
TRACTION
INDUSTRIAL
POWER
HVAC
MOTOR
DRIVES
FROM
HIGH-END
APPLICATIONS
TO
MAINSTREAM
ADOPTION
ELECTRIC
VEHICLE AND
CHARGING
Driving innovation and adoption.
3
2
1
EXPANSION: Reducing
manufacturing costs and a
broader product portfolio
are opening the door for
mainstream adoption.
INNOVATION: Expanding the existing
portfolio through continuous innovation,
product development and streamlined
manufacturing—reducing overall costs.
INTRODUCTION: Providing commercially
available SiC power solutions for applications
where energy efficiency is a key requirement.
SERVERS, SOLAR AND TELECOM customers are currently benefitting from
Cree’s commercially available SiC power products. With energy efficiency a top priority,
these applications utilize the high frequency switching, high voltage operation and
high temperature capabilities that only SiC offers—performance that silicon can’t match.
Industry-leading technology and service.
That’s why Cree should be your power semiconductor partner.
Why Cree? Because Cree has a foundation
that no one can match—the reasons
are clear.
Vertically integrated with an
unprecedented command of its
material supply, Cree is committed to
investing in and expanding its current
infrastructure and manufacturing capacity
to reduce the cost of SiC power devices.
Our goal is to provide the industry’s best
performing devices at the lowest system
cost for all applications.
Industry-leading power products and
dedicated SiC material supply are the
result of Cree’s long history, expertise and
intellectual property portfolio in the power
semiconductor world. As the SiC market
leader and the first company to produce 75mm, 100mm and now 150mm
SiC wafers, Cree has the unique position of producing more than 90% of
the world’s SiC wafers.
Cree has a commitment to continued
product innovation and expansion of
infrastructure. The development of
the industry’s first 150mm SiC wafer
and investment in new fab capacity
Well-stocked distribution channels and flexible manufacturing capabilities
allow Cree to provide the product and supply options that customers need, while
a large network of local Cree distributors as well as application and support
teams provide crucial design assistance and SiC expertise—something not many
competitors can say.
demonstrates why Cree is a leader in
silicon carbide.
Built to outperform silicon products and competitors’ wide band gap devices,
Cree’s quality devices have established themselves in power supply and solar
inverter markets worldwide with more than 200 billion device hours in the field.
2002
2006
First 600V commercial
SiC JBS Schottky diode
First 1200V SiC
Schottky diode
2007
Cree converts to
100mm SiC wafers—
increasing yields and
decreasing cost
2009
2010
Fraunhofer Institute
demonstrates world’s
best solar inverter
efficiency (>98%) with
Cree SiC devices
2011
First 1700V SiC
Schottky diodes
Cree demonstrates first
150mm SiC wafer
First 1200V SiC
MOSFET
FROM UTILITY SCALE TO MICRO-INVERTER,
CREE SiC IS THE SOLUTION CUSTOMERS PREFER.
SiC-BASED 50kW BOOST CONVERTER
Reduce system size and
weight (7kW per kg)
Fit all components on
a single PCB
Lower your BOM cost
Available for purchase
Don’t Compromise.
There is no longer a need for compromise. Cree provides the lowest conduction losses and switching
losses available in a 1200V switch. Cree’s true N-channel MOSFETS are easy to drive with many
commercially available gate drivers.
SiC MOSFETS deliver low output capacitance for extremely fast switching, which reduces the size of
magnetic components while also reducing cooling requirements.
SiC vs. IGBT Conduction Loss
Lower conduction losses
Much lower conduction losses than you would expect.
From the figure on the left, you can see at the rated current
(50A) the forward voltage drop of the Cree 25 mΩ
MOSFET is equal to the IGBT.
However, at the normal operating point of most applications, the curve of an IGBT behaves more like a PIN diode
while the MOSFET acts more like a true resistor. This results
in much lower conduction losses in real aplications.
Cree C2M0025120D
1200V 25 mΩ MOSFET
SiC vs. IGBT Switching Loss
250
SWITCHING LOSS (W)
200
150
TEST CONDITIONS:
Switching freq = 32kHz
Switch voltage = 800V
Switch current = 40A
Duty cycle = 50%
208
The lower switching losses are the result of Cree’s revolutionary Gen 2 Silicon Carbide technology. These 1200V and
1700V MOSFETs deliver industry leading power density
and switching efficiency at half the cost-per-amp of Cree’s
previous generation MOSFETs.
Competitive Device: 1200V IGBT 80A @ TC=25˚C
Cree Device: C2M0025120D 90A @ TC=25˚C
100
50
Lower switching losses
41.4
1.2kV SiC
0
Easy to parallel
1.2kV
Test Conditions:
•
Switching Freq = 32 kHz
•
Switch Voltage = 800V
•
Switch Current = 40A
•
Duty cycle = 50%
Greater design flexibility
Cree is offering engineers greater flexibility to meet their
design targets. Cree SiC MOSFETs have positive temperature coefficients so they can be easily paralleled to achieve
higher power levels. On the left is a thermal image illustrating the current sharing when connecting two 1200V 80 mΩ
devices in parallel. With an increasing portfolio of options,
the possibilities are endless.
Static Drain
Current (A)
Left MOSFET
RDS(on) = 66 mΩ
Right MOSFET
RDS(on) = 90 mΩ
MOSFET
ΔT
20
93.0°C
91.7°C
1.3°C
The Cree Z-FET® 1200V SiC MOSFET
C2M0025120D
C2M0080120D
C2M0160120D
C2M1000170D
VDS VDS VDS VDS
= 1200V
= 1200V
= 1200V
= 1700V
RDS(ON) = 25 mΩ
RDS(ON) = 80 mΩ
RDS(ON) = 160 mΩ
RDS(ON) = 1 Ω
ID(MAX) = 90A
ID(MAX) = 32A
ID(MAX) = 18A
ID(MAX) = 5A
(TC = 25°C)
REVOLUTIONIZE YOUR POWER INVERTER DESIGN WITH CREE Z-FET® SiC MOSFETs
DC IN
SILICON THREE LEVEL INVERTER
3 PHASE
AC OUT
SILICON CARBIDE TWO LEVEL INVERTER
Increase power density up to 50% with SiCbased inverters. Use fewer components,
reduce system size, complexity and overall
cost while delivering the industry’s highest
system efficiency and reliability.
Cree Z-Rec® Schottky diodes deliver the industry’s best
silicon carbide performance, efficiency and product range.
With the industry’s largest silicon carbide product portfolio, Cree Z-Rec SiC Schottky diodes provide solutions for
many power applications in a wide range of packages, voltages and amperages that deliver the industry’s highest SiC
blocking voltage and switching frequency capability. Cree’s unique design advantages include a unipolar construction
that eliminates turn-off switching losses, a junction barrier that minimizes leakage current at high voltage and a merged
PIN design to enable extremely high surge current capability. Enhance your designs with the industry’s most innovative
power devices.
CREE SiC BARE DIE
FOR POWER MODULES
Take advantage of the ultra low
loss, high-frequency operation, zero
reverse recovery current, ultra fast
switching and positive temperature
coefficient with bare-die Cree SiC
diodes and MOSFETs.
The LED lighting power solution
The Cree Z-Rec® QFN is the industry’s
smallest commercially available Schottky
diode at 3.3 x 3.3 x 1mm and is optimized
to solve thermal and EMI issues associated
with non-isolated LED lighting. By enabling
lower system temperatures with zero reverse
recovery, the QFN achieves higher system
efficiency and lower EMI in a package specifically designed for tight spaces.
The “silicon compromise” is a thing of the past.
Scan this QR code to get the link to the Cree SiC Schottky
Diode QFN App Note sent straight to your inbox.
Cree’s bare die power devices
(MOSFETs and Schottky diodes)
bring the advantages of SiC material
to power modules and microelectronic
assemblies. Motor drives, solar and
wind power inverters, switchmode
power supplies, UPS and induction
heating applications will benefit from
the performance, efficiency and
reliability of silicon carbide.
High blocking voltages
for high power applications
Reverse Recovery Losses
1700V 10A SiC Schottky vs
Achieving reverse-blocking voltages
above 1200V can require the use of
two silicon diodes, causing thermal
management, voltage isolation,
efficiency and EMI issues.
Cree Z-Rec® 1700V Schottky diodes
solve this problem by delivering the
industry’s highest blocking voltage
and zero reverse recovery in a discrete
package, enabling design engineers to
decrease component count and reduce
system size.
1700V 16A Si PIN Diode
T
3
4A for 40ns,
Capacitive
85A for 360ns,
Recovery
3
20.0 A
BW
200ns
T 10.00 %
2.50GS/s
10k points
Aux
667mV
Cree SiC Schottky diodes achieve zero reverse recovery,
virtually eliminating diode switching losses and reducing
overall system losses and EMI, while improving reliability.
CREE Z-REC SCHOTTKY DIODES
600V: 1,2,3,4,6,8,10,20A
TO-263
650V: 4,6,8,10A
1200V: 2,5,8,10,15,20,30,40A
1700V: 10,25A
TO-252
TO-220
TO-247
Cree Z-Rec Schottky diodes:
Improve system efficiency
Reduce system size
Increase system reliability
Simplify designs/circuitry
Shorten design cycles
Provide high frequency switching
Reduce switching losses
Improve EMI signatures
Lower system cost
CREE POWER PRODUCT SELECTOR GUIDE
Cree SiC Modules
RDS(ON) (T =25°C) (mΩ) RDS(ON) (T =150°C) (mΩ)
J
J
Typ
Max
Typ
Max
EOFF (T =150°C)
J
(mJ)
ID (T =90°C) (A) Package
c
(Continuous) Size (mm)
Configuration
Part Number
VDS (V)
CAS100H12AM1
1200
16
22
20
24
1.8
117
50 x 87.5
Half-bridge
CCS050M12CM2
1200
25
34
43
63
0.6
59
45 x 108
6-pack (3 phase) NEW!
Die Size
(mm)
Recommended for
new design?
Cree Z-FET® SiC MOSFETs - Bare Die
Part Number
VDSS (V)
RDS(ON) (T =25°C) (mΩ) RDS(ON) (T =150°C) (mΩ)
J
J
Typ
Max
Typ
Max
ID (T =25°C) (A) ID (T =100°C) (A)
c
c
(Continuous) (Continuous)
CPM2-1200-0080B
1200
80
98
150
208
32
20
3.10 x 3.36
YES
CPM2-1200-0160B
CPM2-1200-0025B
CPMF-1200-S160B
1200
1200
1200
160
25
160
196
34
220
290
43
190
400
63
275
18
107
28
11
65
18
2.39 x 2.63
4.04 x 6.44
3.10 x 3.10
YES
YES
NO
CPMF-1200-S080B
1200
80
110
110
140
50
30
4.08 x 4.08
NO
Package
Type
Recommended for
new design?
Cree Z-FET® SiC MOSFETs
Part Number
VDSS (V)
C2M0025120D
C2M0080120D
C2M0160120D
C2M1000170D
CMF10120D
CMF20120D
(mΩ)
RDS(ON)
25°C) (T =
J
RDS(ON) (T =150°C) (mΩ)
J
Typ
Max
ID (T =25°C) (A) ID (T =100°C) (A)
c
c
(Continuous) (Continuous)
Typ
Max
1200
1200
1200
1700
1200
25
80
160
1000
160
33
98
196
1100
220
45
150
290
2100
190*
52
208
400
2900
260*
90
32
18
5
24
60
20
11
3
13
TO-247-3
TO-247-3
TO-247-3
TO-247-3
TO-247-3
YES NEW!
YES
YES NEW!
YES NEW!
NO
1200
80
100
95*
120*
42
24
TO-247-3
NO
*TJ=135°C
Cree Z-Rec® SiC Schottky diodes
Part Number
VRRM (V)
IF (A)
I (A)
(rated)
F
(TC=135°C)
VF (T =25°C)
J
Typ
Max
VF (T =175°C)
J
Typ
Max
Qc
(nC)
Package Type
Recommended
for new design?
C4D02120A
C4D02120E
C4D05120A
C4D05120E
C2D05120A
C2D05120E
1200
1200
1200
1200
1200
1200
2
2
5
5
5
5
6
7
8
9
8.5
8.5
1.4
1.4
1.4
1.4
1.6
1.6
1.8
1.8
1.8
1.8
1.8
1.8
1.9
1.9
1.9
1.9
2.6
2.6
3.0
3.0
3.0
3.0
3.0
3.0
113
113
283
283
285
285
TO-220-2
DPAK
TO-220-2
DPAK
TO-220-2
DPAK
YES
YES
YES
YES
NO
NO
C4D08120A
C4D08120E
C4D10120A
1200
1200
1200
8
8
10
11
12
14
1.5
1.5
1.5
1.8
1.8
1.8
2.2
2.2
2.2
3.0
3.0
3.0
373
373
513
TO-220-2
DPAK
TO-220-2
YES
YES
YES
C4D10120D
C4D10120E
C2D10120A
1200
1200
1200
10
10
10
18
16
14.5
1.4
1.5
1.6
1.8
1.8
1.8
1.9
2.2
2.5
3.0
3.0
3.0
563
513
615
TO-247-3
DPAK
TO-220-2
YES
YES
NO
C2D10120D
1200
10
23
1.6
1.8
2.6
3.0
565
TO-247-3
NO
C4D15120A
C4D20120A
C2D20120D
1200
1200
1200
15
20
20
20
25.5
29
1.6
1.5
1.6
1.8
1.8
1.8
2.3
2.2
2.5
3.0
3.0
3.0
783
993
1225
TO-220-2
TO-220-2
TO-247-3
YES
YES
NO
C4D20120D
1200
20
33
1.5
1.8
2.2
3.0
1023
TO-247-3
YES
C4D30120D
C4D40120D
CSD01060A
CSD01060E
C3D1P7060Q
C3D02060A
1200
1200
600
600
600
600
30
40
1
1
1.7
2
43
54
2
2
3
4
1.5
1.5
1.6
1.6
1.5
1.5
1.8
1.8
1.8
1.8
1.7
1.7
2.2
2.2
2.0
2.0
1.8
1.8
3.0
3.0
2.4
2.4
2.4
2.4
1563
1983
3.32
3.32
4.41
4.82
TO-247-3
TO-247-3
TO-220-2
DPAK
QFN 3.3
TO-220-2
YES
YES
YES
YES
YES
YES
Cree SiC Modules
Cree Z-Rec® SiC Schottky diodes (continued)
Part Number
VRRM (V)
IF (A)
I (A)
(rated)
F
(TC=135°C)
CAS 100 H 12 A M 1
VF (T =25°C)
J
Typ Max
VF (T =175°C)
J
Typ Max
Qc
(nC)
Package
Type
Recommended
for new design?
Switch Indicator
Switch Type
C3D02060E
600
2
4
1.5
1.7
1.8
2.4
4.82
DPAK
YES
Housing
C3D02060F
C3D03060A
C3D03060E
C3D03060F
600
600
600
600
2
3
3
3
1.8
5.5
5.5
2.2
1.5
1.5
1.5
1.5
1.7
1.7
1.7
1.7
1.8
1.8
1.8
1.8
2.4
2.4
2.4
2.4
4.8
6.72
6.72
6.72
Full-Pak
TO-220-2
DPAK
Full-Pak
YES
YES
YES
YES
Voltage Rating
Per Switch
C3D04060A
600
4
7.5
1.5
1.7
1.8
2.4
8.52
TO-220-2
YES
Three Digit Series
2
C3D04060E
600
4
7.5
1.5
1.7
1.8
2.4
8.5
DPAK
YES
C3D04060F
C3D06060A
C3D06060G
C3D06060F
C3D08060A
C3D08060G
600
600
600
600
600
600
4
6
6
6
8
8
2.6
8.5
9.5
3.3
11
11
1.5
1.6
1.6
1.6
1.6
1.6
1.7
1.8
1.8
1.8
1.8
1.8
1.8
1.9
1.9
1.9
1.9
1.9
2.4
2.4
2.4
2.4
2.4
2.4
8.52
162
162
162
212
212
Full-Pak
TO-220-2
D2PAK
Full-Pak
TO-220-2
D2PAK
YES
YES
YES
YES
YES
YES
C3D10060A
600
10
14
1.5
1.8
2.0
2.4
25
TO-220-2
YES
C3D10060G
C3D16060D
C3D20060D
C3D04065A
600
600
600
650
10
16
20
4
14
22
28
10.8
1.5
1.6
1.5
1.5
1.8
1.8
1.8
1.7
2.0
1.9
2.0
1.8
2.4
2.4
2.4
2.4
252
422
502
8.52
D2PAK
TO-246-3
TO-247-3
TO-220-2
YES
YES
YES
YES
C3D06065A
C3D08065A
C3D08065I
650
650
650
6
8
8
12.6
15.5
7
1.6
1.6
1.5
1.8
1.8
1.8
1.9
1.9
2.0
2.4
2.4
2.4
162
212
212
TO-220-2
TO-220-2
TO-220-Iso
YES
YES
YES NEW!
C3D10065A
C3D10065I
650
650
10
10
20.3
8.5
1.5
1.5
1.8
1.8
2.0
2.0
2.4
2.4
252
252
TO-220-2
TO-220-Iso
YES
YES
C3D50065D
C3D10170H
650
1700
50
10
46
14.5
1.5
1.7
1.8
2.0
1.8
3.0
2.2
3.5
1
110
765
TO-247-3
TO-247-2
YES NEW!
YES
C3D25170H
1700
25
26
1.8
2.5
3.2
4.0
1825
TO-247-2
YES
2
2
Diode Current (H = Half,
M = Marked Current)
Current Per Switch
Cree Z-FET SiC MOSFETs: Bare die
CPM2-1700-0040 B
Metal
R DS(ON) ( mΩ)
Voltage Rating
Four Digit Series
Cree Z-FET SiC MOSFETs
C2M 0080 1200 D
Package Code
Voltage Rating
R DS(ON) ( mΩ)
Three Digit Series
Cree Z-Rec SiC diodes: Bare die
Cree Z-Rec SiC Schottky diodes - Bare Die
®
Part Number
(A)
F
VRRM (V) I(rated)
CPW5-1700-Z 050 B
VF (T =25°C)
J
Typ Max
VF (T =175°C)
J
Typ Max
Qc
(nC)
Die Size
(mm)
Recommended
for new design?
Top Metal
Amperage Rating
Aspect Ratio (Z= Square,
CPWR-0600-S001B
CPW3-0600-S002B
CPW3-0600-S003B
CPW3-0600-S004B
CPW2-0600-S006B
CPW2-0600-S008B
CPW2-0600-S010B
CPW3-0650-S004B
CPW2-0650-S006B
600
600
600
600
600
600
600
650
650
1
2
3
4
6
8
10
4
6
1.6
1.5
1.5
1.5
1.6
1.6
1.5
1.5
1.6
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
1.8
2.0
1.8
1.8
1.8
1.9
1.9
2.0
1.8
1.9
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
2.4
3.32
4.82
6.72
8.52
162
212
252
8.52
162
1.07 x 0.66
1.07 x 0.66
1.07 x 0.92
1.13 x 1.13
1.55 x 1.55
1.77 x 1.77
1.92 x 1.92
1.13 x 1.13
1.55 x 1.55
YES
YES
YES
YES
YES
YES
YES
YES
YES
CPW2-0650-S008B
CPW2-0650-S010B
CPW5-0650-Z030B
650
650
650
8
10
30
1.6
1.5
1.6
1.8
1.8
1.7
1.9
2.0
2.2
2.4
2.4
2.5
21
252
653
1.77 x 1.77
1.92 x 1.92
2.80 x 2.80
YES
YES
YES
Package Code
CPW5-0650-Z050B
CPW4-1200-S002B
650
1200
50
2
1.5
1.4
1.8
1.8
1.8
1.9
2.2
3.0
1103
113
3.50 x 3.50
1.18 x 1.18
YES NEW!
YES
Three Digit Series
CPW4-1200-S005B
CPW4-1200-S008B
CPW4-1200-S010B
CPW4-1200-S015B
CPW4-1200-S020B
CPW5-1200-Z050B
1200
1200
1200
1200
1200
1200
5
8
10
15
20
50
1.4
1.5
1.5
1.6
1.5
1.6
1.8
1.8
1.8
1.8
1.8
1.8
1.9
2.2
2.2
2.3
2.2
2.3
3.0
3.0
3.0
3.0
3.0
2.7
283
373
513
783
993
2463
1.69 x 1.69
2.00 x 2.00
2.26 x 2.26
2.70 x 2.70
3.08 x 3.08
4.90 x 4.90
YES
YES
YES
YES
YES
YES NEW!
CPW3-1700-S010B
CPW3-1700-S025B
CPW5-1700-Z050B
1700
1700
1700
10
25
50
1.7
1.8
1.6
2.0
2.0
1.9
3.0
3.2
2.5
3.5
4.0
2.8
965
1705
3704
3.78 x 2.68
5.70 x 3.94
6.0 x 6.0
YES
YES
YES NEW!
2
Y=Rectangular)
Voltage Rating
Four Digit Series
Cree Z-Rec SiC diodes
C4D 05 120 E
Voltage Rating
Amperage Rating
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Copyright © 2014 Cree, Inc. All rights reserved. This document is provided for informational purposes only and is not a
warranty or specification. The information in this document is subject to change without notice. Cree, the Cree logo, ZFET and Z-Rec are registered trademarks of Cree, Inc.
Published February 2014
Printed on 100% recycled paper with non-toxic soy-based ink.