HMC757LP4E
v00.0610
Amplifiers - Linear & Power - SMT
9
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Typical Applications
Features
The HMC757LP4E is ideal for:
Saturated Output Power: 27.5 dBm @ 21% PAE
• Point-to-Point Radios
High Output IP3: 34.5 dBm
• Point-to-Multi-Point Radios
High Gain: 20.5 dB
• VSAT
DC Supply: +5V @ 400 mA
• Military & Space
No External Matching Required
24 Lead 4x4 mm SMT Package: 16 mm²
Functional Diagram
General Description
The HMC757LP4E is a three stage GaAs pHEMT
MMIC 1 Watt Power Amplifier which operates between 16 and 24 GHz. The HMC757LP4E provides
20.5 dB of gain, and 27.5 dBm of saturated output
power and 21% PAE from a +5V supply. The RF I/Os
are DC blocked and matched to 50 Ohms. The 4x4
mm plastic package eliminates the need for wirebondig, and is compatible with surface mount manufacturing techniques.
Electrical Specifications, TA = +25° C, Vdd = +5V, Idd = 400mA [1]
Parameter
Min.
Frequency Range
Gain
18.5
Gain Variation Over Temperature
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept
Typ.
16 - 24
(IP3)[2]
Total Supply Current (Idd)
24.5
Max.
Units
GHz
20.5
dB
0.028
dB/ °C
11
dB
12
dB
26.5
dBm
27.5
dBm
34.5
dBm
400
mA
[1] Adjust Vgg between -2 to 0V to achieve Idd = 400 mA typical.
[2] Measurement taken at Pout / Tone = +16 dBm
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Broadband Gain &
Return Loss vs. Frequency
Gain vs. Temperature
28
30
+25C
+85C
-40C
20
10
S21
S11
S22
0
GAIN (dB)
RESPONSE (dB)
24
20
9
-10
16
12
-30
12
14
16
18
20
22
FREQUENCY (GHz)
24
26
16
28
22
24
Output Return Loss vs. Temperature
0
0
+25C
+85C
-40C
-4
RETURN LOSS (dB)
+25C
+85C
-40C
-4
-8
-12
-16
-8
-12
-16
-20
-24
-20
16
18
20
22
16
24
18
P1dB vs. Temperature
22
24
P1dB vs. Supply Voltage
33
29
31
P1dB (dBm)
31
27
25
+25C
+85C
-40C
23
20
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
20
FREQUENCY (GHz)
Input Return Loss vs. Temperature
RETURN LOSS (dB)
18
5V
6V
7V
Amplifiers - Linear & Power - SMT
-20
29
27
25
21
23
16
18
20
FREQUENCY (GHz)
22
24
16
18
20
22
24
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Psat vs. Temperature
Psat vs. Supply Voltage
33
33
+25C
+85C
-40C
Psat (dBm)
31
29
27
25
27
5V
6V
7V
23
16
18
20
22
24
16
18
FREQUENCY (GHz)
22
24
22
24
Psat vs. Supply Current (Idd)
31
31
29
29
Psat (dBm)
P1dB (dBm)
P1dB vs. Supply Current (Idd)
27
25
350mA
375mA
400mA
23
20
FREQUENCY (GHz)
27
350mA
375mA
400mA
25
23
21
21
16
18
20
22
24
16
18
FREQUENCY (GHz)
20
FREQUENCY (GHz)
Output IP3 vs.
Temperature, Pout/Tone = +16 dBm
Output IP3 vs.
Supply Current, Pout/Tone = +16 dBm
45
45
+25C
+85C
-40C
350mA
375mA
400mA
40
IP3 (dBm)
40
35
30
35
30
25
25
16
18
20
FREQUENCY (GHz)
9-3
29
25
23
IP3 (dBm)
Amplifiers - Linear & Power - SMT
9
Psat (dBm)
31
22
24
16
18
20
22
24
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Output IP3 vs.
Supply Voltage, Pout/Tone = +16 dBm
Output IM3 @ Vdd = +5V
70
45
60
5.0V
6.0V
7.0V
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
50
IM3 (dBc)
IP3 (dBm)
40
35
40
9
30
20
30
0
25
16
18
20
22
5
24
7
9
11
Output IM3 @ Vdd = +6V
17
19
21
23
21
23
70
60
60
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
50
IM3 (dBc)
50
IM3 (dBc)
15
Output IM3 @ Vdd = +7V
70
40
30
40
30
20
20
10
10
0
0
5
7
9
11
13
15
17
19
21
23
5
7
9
Pout/TONE (dBm)
0
30
-10
Pout
Gain
PAE
15
17
19
+25C
+85C
-40C
ISOLATION (dB)
-20
20
15
10
-30
-40
-50
-60
5
0
-18
13
Reverse Isolation vs. Temperature
35
25
11
Pout/TONE (dBm)
Power Compression @ 20 GHz
Pout (dBm), GAIN (dB), PAE (%)
13
Pout/TONE (dBm)
FREQUENCY (GHz)
Amplifiers - Linear & Power - SMT
10
-70
-80
-13
-8
-3
2
INPUT POWER (dBm)
7
12
16
18
20
22
24
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Gain & Power vs.
Supply Current @ 20 GHz
Gain & Power vs.
Supply Voltage @ 20 GHz
Gain (dB), P1dB (dBm), Psat (dBm)
35
30
25
20
Gain
P1dB
Psat
15
10
350
30
25
Gain
P1dB
Psat
20
15
10
360
370
380
390
400
5
5.5
6
Idd (mA)
6.5
7
Vdd (V)
Power Dissipation
2.5
POWER DISSIPATION (W)
Amplifiers - Linear & Power - SMT
9
Gain (dB), P1dB (dBm), Psat (dBm)
35
16 GHz
18 GHz
20 GHz
22 GHz
24 GHz
2.3
2.1
1.9
1.7
1.5
-18
-14
-10
-6
-2
2
6
10
INPUT POWER (dBm)
Absolute Maximum Ratings
Drain Bias Voltage (Vdd)
7V
RF Input Power (RFIN)
Channel Temperature
Typical Supply Current vs. Vdd
Vdd (V)
Idd (mA)
23 dBm
+5.0
400
150 °C
+5.5
400
+6.0
400
Continuous Pdiss (T= 85 °C)
(derate 40 mW/°C above 85 °C)
2.7 W
Thermal Resistance
(channel to exposed ground paddle)
24.85 C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-55 to +85 °C
Note: Amplifier will operate over full voltage ranges shown
above Vgg adjusted to achieve Idd = 400 mA at +5.5V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9-5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL: ALUMINA
2. LEAD AND GROUND PADDLE PLATING: 30-80 MICROINCHES GOLD OVER
50 MICROINCHES MINIMUM NICKEL.
3. DIMENSIONS ARE IN INCHES [MILLIMETERS].
4. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm DATUM -C6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED
TO PCB RF GROUND.
7. CLASSIFIED AS MOISTURE SENSITIVITY LEVEL (MSL) 1.
Package Information
Part Number
Package Body Material
Lead Finish
HMC757LP4E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[2]
Package Marking [1]
H757
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Linear & Power - SMT
9
9-6
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Pin Descriptions
Amplifiers - Linear & Power - SMT
9
9-7
Pin Number
Function
Description
1, 2, 4 - 7,
12 - 15, 17 - 19, 24
GND
These pins and package bottom must be
connected to RF/DC ground.
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
8 - 11, 20, 22
N/C
The pins are not connected internally; however, all data
shown herein was measured with these pins connected to
RF/DC ground externally.
16
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
21
Vdd
Drain bias for amplifier. External bypass caps 100pF, 0.1uF
and 4.7uF are required
23
Vgg
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass caps 100pF, 0.1uF and 4.7uF
are required.
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC757LP4E
v00.0610
GaAs pHEMT MMIC ½ WATT
POWER AMPLIFIER, 16 - 24 GHz
Evaluation PCB
List of Materials for Evaluation PCB 131216 [1]
Item
Description
J1, J2
2.9 mm Connectors
J3, J4
DC Pins
C1, C16
100 pF Capacitor, 0402 Pkg.
C5, C17
10 kpF Capacitor, 0402 Pkg.
C9, C18
4.7 µF Capacitor, 0402 Pkg.
U1
HMC757LP4E Power Amplifier
PCB [2]
125559 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon FR4
The circuit board used in the application should
use RF circuit design techniques. Signal lines
should have 50 Ohm impedance while the package
ground leads and exposed paddle should be
connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Amplifiers - Linear & Power - SMT
9
9-8