Unplugged.
Radio communication
Higher frequency communication systems are
one of today's growth markets. One factor is the
increasing demand for point-to-point or pointto-multipoint radio links within the backbone of
the 2G and 3G cellular networks. The other is
the still booming LNB market with its
transition to bidirectional systems.
The basic block diagrams of a radio link and a
bidirectional VSAT system are very similar,
with the receive path the same as in today's
LNBs. Here NEC can call on its expertise as
world market leader for low-noise FETs.
NEC is in the unique position of being able to offer
three different technologies - silicon, SiGe and
GaAs - to meet customer needs. Products range
from discrete BJT Si transistors, through OSC and
Si MMIC gain blocks and ultra-low-noise GaAs HJFET for up to 24 GHz, to state-of-the-art 13 GHz
SiGe prescalers.
LNA
NE3504S02
NF 0.30 dB; Ga 14.0 dB @ 12 GHz; GaAs HJ-FET
NE3210S01
NF 0.35 dB; Ga 13.5 dB @ 12 GHz; GaAs HJ-FET
NE350184C
NF 0.70 dB; Ga 13.0 dB @ 20 GHz; GaAs HJ-FET, ceramic PKG
MIXER
NE4210S01
NF 0.50 dB; Ga 13.0 dB @ 12 GHz; GaAs HJ-FET
NE3503M04
NF 0.75 dB; Ga 12.0 dB @ 12 GHz; GaAs HJ-FET, mold plastic PKG
Local OSC.
NE662M04
NF 1.1 dB; Ga 16.0 dB @ 2 GHz; fT 25 GHz, Si BJT
NE52418
NF 1.0 dB; Ga 17.0 dB @ 2 GHz; GaAs HBT
Prescaler
µPD1512TU
fIN 5 - 13 GHz; 50 mA @ 5 V VCC; divide by 8; small 8-pin plastic PKG, SiGe*
µPD1513TU
fIN 5 - 13 GHz; 50 mA @ 5 V VCC; divide by 4; small 8-pin plastic PKG, SiGe*
IF Amplifier
µPC2712TB
GP 20 dB; NF 4.5 dB; ICC 12 mA; POUT(1 dB) -2.0 dBm @ 1 GHz
µPC2709TB
GP 23 dB; NF 5.0 dB; ICC 25 mA; POUT(1 dB) +8.5 dBm @ 1 GHz
µPC3223TB
GP 23 dB; NF 4.5 dB; ICC 19 mA; POUT(1 dB) +6.5 dBm @ 1 GHz
µPC3224TB
GP 21.5 dB; NF 4.3 dB; ICC 9 mA; POUT(1 dB) -3.5 dBm @ 1 GHz
µPC3225TB
GP 33 dB; NF 3.5 dB; ICC 22 mA; POUT(1 dB) +8.0 dBm @ 1 GHz
Switch
µPG2053K
2 x 4 matrix with logic; LINS 6 dB; ISL 38 dB @ 1.5 GHz
µPG188GR
2 x 4 matrix; LINS 7 dB; ISL 30 dB @ 1.5 GHz, VCONT 0 V/+5 V
µPD5710TK
LINS 0.6 dB; ISL 30 dB; PIN(1 dB) +20 dBm @ 1 GHz; single control voltage; DC to 2.5 GHz
* under development
Reception systems
Only a few years ago, few people could have
predicted how rapidly many new services would
be adopted into our daily lives. Today cellular
phones are mass market products, with new
services like GPS, digital satellite radio and
digital broadcast terrestrial TV (DBTV) poised
to become so.
GPS is breaking out of the narrow box of
professional and military applications into the
consumer market, while digital satellite radio
and DBTV services are already starting to gain
momentum.
For these growing and emerging markets, NEC
offers a wide range of devices. In the field of GPS
systems, our offering includes SiGe transistors,
low- and high-gain SiGe MMICs for the LNA stage,
and RF receiver ICs with an integrated A/D
converter. We also offer low-noise HJ-FET and
SiGe transistors to meet the exacting requirements
of digital satellite radio systems with respect to
noise.
The DBTV product line-up includes Si discretes
and MMICs for the receive path as well as
components for set-top boxes.
Switch
µPG2053K
2 x 4 matrix with logic; LINS 6 dB; ISL 38 dB; PIN(1 dB) @ 1.5 GHz
µPG188GR
2 x 4 matrix; LINS 7 dB; ISL 30 dB; PIN(1 dB) @ 1.5 GHz; VCONT 0 V/+5 V
µPD5710TK
LINS 0.6 dB; ISL 30 dB; PIN(1 dB) +20 dBm @ 1 GHz; single control voltage; DC to 2.5 GHz
IF Amplifier
µPC2708TB
GP 15 dB; NF 6.5 dB; ICC 26 mA; POUT(1 dB) +7.5 dBm @ 1GHz
µPC2709TB
GP 23 dB; NF 5.0 dB; ICC 25 mA; POUT(1 dB) +8.5 dBm @ 1GHz
µPC3223TB
GP 23 dB; NF 4.5 dB; ICC 19 mA; POUT(1 dB) +6.5 dBm @ 1GHz
µPC3224TB
GP 21.5 dB; NF 4.3 dB; ICC 9 mA; POUT(1 dB) -3.5 dBm @ 1GHz
AGC + Video Amplifier for Set-top Boxes
µPC3218GV
GMAX 63 dB; GCR 53 dB; NF 3.5 dB
µPC3220GR
Incl. mixer; CGMAX 33 dB; GCR 45.5 dB; NF 7 dB
LNA SDARS, DAB
NE3505M04
1st stage; NF 0.3 dB; Ga 16 dB @ f 2.4 GHz
NE34018
2nd stage; NF 0.3 dB; Ga 16 dB @ f 2.4 GHz
NESG2101M05
3rd stage; NF 0.3 dB; Ga 16 dB @ f 2.4 GHz
LNA GPS
µPC8211TK
GL 16 dB; NF 1.5 dB; power-down function
µPC8215TU
GL 28 dB; NF 1.5 dB; power-down function; low current consumption
Receiver IC GPS
µPD1008K
1st IF 175.164; 2nd IF 0.132 MHz; VCO, 2-bit A/D converter incorporated
µPD1009K
2nd IF 4.092; 2.556 MHz; VCO, 4-bit A/D converter incorporated
Short range wireless communication
The use of short-range communication systems
is growing fast. Many people are probably
unaware of how much these technologies have
become part of everyday life. Cordless phones
are used routinely, while new technologies like
Bluetooth and WLAN are rapidly gaining
acceptance.
Because these two-way communication
technologies are defined for the consumer
market, cost is the main factor driving new
development.
NEC offers a wide range of LNA, PA and switching
devices for DECT, Bluetooth and WLAN designs.
For LNA applications, NEC offers various discrete
devices from low-cost Si bipolar transistors through
higher-performance SiGe HBT transistors to
lowest-noise HJ-FET transistors, especially for
802.11a systems. Customers can choose from
discrete Si and SiGe transistors and GaAs MMICs
for different PA requirements. The switches cover
the full spectrum from a low-power CMOS SPDT
to high-power GaAs SP3T and high-power 6 GHz
DPDT components. There is also a choice of singleand dual-control voltage devices.
LNA
NESG2031M05
NF 0.7 dB; Ga 17 dB @ 2.4 GHz
NESG3031M14
NF 1.1 dB; Ga 9.5 dB @ 5.8 GHz
NE3505M04
NF 0.3 dB; Ga 16 dB @ 2.4 GHz
Switch
µPG2012TK
SPDT; LINS 0.3 dB; ISL 30 dB; PIN(0.1 dB) +20.5 dBm; single control
µPG2015TB
SPDT; LINS 0.3 dB; ISL 30 dB; PIN(0.1 dB) +27 dBm; single control
µPG2030TB
SPDT; LINS 0.25 dB; ISL 30 dB; PIN(0.1 dB) +27 dBm; low cost
µPG2024TQ
DPDT; LINS 1.2 dB; ISL 2.0 dB; PIN(0.1 dB) +32 dBm @ 5.8 GHz
µPG2035T5F
DPDT; LINS 0.8 dB; ISL 33 dB @ 2.4 GHz LINS 1.2 dB; ISL 24 dB @ 5.8 GHz
PIN(1 dB) = 30 dBm
PA
µPG2301TQ
PO(1 dB) +23 dBm; GP 23 dB; GCR 23 dB @ 2.4 GHz
µPD5702TU
PO(1 dB) +21 dBm; PIN -2 dBm @ 2.45 GHz; GL 26.5 dB
Wireless control
Wireless control has become an indispensable
part of everyday life. Wireless remote control
facilitates routine tasks like opening gates and
shutting windows; it makes wireless metering
and fire alarm systems possible, and in the
automotive sector there are applications like
remote keyless entry and tire pressure
monitoring.
Wireless control devices have established
themselves as cost-efficient and robust
solutions for a broad range of control
applications. This is a steadily growing market
and NEC offers a wide choice of devices for
different solutions.
These include discrete Si or SiGe transistors and
CMOS switches for low-cost ISM band
applications, like door openers or two-way data
transmission systems, and low-noise HJ-FET or
SiGe transistors that can be used in 10 GHz and 24
GHz radar sensors. NEC is also working on higher
integrated solutions and on devices that offer
improved performance.
LNA, Mixer, VCO, Buffer, PA
NE85630
NF 1.2 dB; Ga 9 dB @ 1 GHz; fT 4.5 GHz
NE68519
NF 1.5 dB; Ga 11 dB @ 2 GHz; fT 12.0 GHz
NE68130
NF 1.4 dB; Ga 12 dB @ 1 GHz; fT 7.0 GHz
Switch SPDT
µPG2012TK
LINS 0.3 dB; ISL 30 dB; PIN(0.1 dB) +20.5 dBm; single control voltage
µPG2214TK
LINS 0.3 dB; ISL 27 dB; PIN(0.1 dB) +23 dBm; 1.8 V to 5.3 V operation
µPD5710TK
LINS 0.6 dB; ISL 30 dB; PIN(0.1 dB) +20 dBm @ 1 GHz; single control voltage; DC to 2.5 GHz
Receiver IC
µPC8208K*
* under development
4 frequency bands; ASK/FSK demodulator; dual LNA built in VCO; 3.3 V supply voltage
Private radio communication
Private radio communication for the noncellular market ranges from PMR446 radios
through professional mobile radio (PMR),
using digital standards like Tetra and Tetrapol,
to satellite systems like Inmarsat.
These applications are basically very similar but
there are specific requirements that have to be
met in each area. The output power of a licensefree PMR446 system is limited to 0.5 W and its
features are tuned to the needs of the private
user. By contrast, the PMR system addresses
the mobile communication needs of
professional users - including police forces,
safety services, customs, utilities,
transportation, airports and commercial
security services.
The requirements of INMARSAT or DVBT
applications are quite similar to those of PMR
systems, except for the cellular networks and the
frequency bands.
NEC offers a wide range of products for these
applications - from low-noise transistors through
wide-band gain blocks, mixers and switches to a
large range of power transistors.
NEC's mid-power GaAs and LDMOS product
families, in particular, target private radio
communication markets, including VHF and UHF
portable/land mobile telephony, Inmarsat, DVBT
and mobile base stations.
LNA
NE85630
NF 1.2 dB; Ga 9 dB @ 1 GHz; fT 4.5 GHz
NESG2031M05
NF 0.7 dB; Ga 17 dB @ 2.4 GHz
µPC8211TK
NF 1.5 dB; Ga 15 dB @ 1.5 GHz; power-down function
Mixer
µPC2757TB
CG 15 dB; Po(SAT) -3 dBm; OIP3 +5 dBm @ fIN 800MHz
µPC2758TB
CG 19 dB; Po(SAT) +1 dBm; OIP3 +11 dBm @ fIN 800MHz
NE85630
NF 1.2 dB; Ga 9 dB @ 1 GHz; fT 4.5 GHz
VCO
NE85630
NF 1.2 dB; Ga 9 dB @ 1 GHz; fT 4.5 GHz
NE681M03
NF 1.4 dB; Ga 12 dB @ 1 GHz; fT 7.0 GHz
Buffer
µPC8178TK
GP 11 dB; ISL 40 dB; Po(1 dB) -5.5 dBm; NF 5.5 dB @ 1 GHz
µPC8179TK
GP 13.5 dB; ISL 44 dB; Po(1 dB) +3 dBm; NF 5.0 dB @ 1 GHz
Driver
NE678M04
Po(1 dB) +18 dBm; GL 13 dB ηc typ. 55%; VCE 2.8 V
NE5500179A
Po(1 dB) +30 dBm; GL 14 dB ηc typ. 55%; VDS 4.8 V
PA
NE5510279A
Po(1 dB) +33 dBm; GL 10 dB; ηc typ. 47%; VDS 4.8 V
NE5511279A
Po(1 dB) +40 dBm; GL 15 dB; ηc typ. 48%; VDS 7.5 V
Featured products
Si Bipolar Transistor - for OSC, LNA, driver, mixer, general purpose
Part Number
VCE V
IC MA
hfe
fT GHz
|S21e|²
NFOPT dB @ IC mA
f GHz
NE681M03
3
7
140
7.0
12
1.4
7
1
NE68519
3
10
100
12.0
8.5
1.5
3
2
NE85630
3
7
140
4.5
9.0
1.0
7
1
NE662M04
2
5
75
25
17
1.1
5
1
The transistors listed above are available in a number of different packages.
SiGe HBT Transistor - for high frequency OSC, LNA @ VCE 3 V
Part Number
I C MA
fT GHz
MSG db
P1db dBm NFOPT dB
@ IC mA f GHz
NESG2021M05
10
25
22.5
10
0.9
5
2
NESG2031M05
20
25
21.5
13
0.8
5
2
NESG2101M05
50
17
17.0
21.5
0.9
10
2
NESG3031M14
20
-
14.0
13
0.95
6
5.2
Low Noise GaAs HJ-FET (Hetro Junction FET) - for high frequency LNA, driver, mixer @ VDS 2 V
Part Number
IDSS mA
VP MIN V gM mS
MSG/MAG
NFOPT dB @ IDS mA
Ga dB f GHz
NE3210S01
40
-0.2
40
15
0.35
10
13.5
12
NE4210S01
40
-0.2
40
15
0.50
10
13.0
12
NE350184C
40
-0.2
55
13
0.7
10
12.0
20
NE3503M04
40
-0.2
55
13
0.55
10
11.5
12
NE3504S02
40
-0.2
40
15
0.30
10
14.0
12
NE3505M04
40
-0.2
55
15
0.35
10
14.0
4
NE34018
70
-0.2
30
18
0.60
5
16.0
2
Low Noise GaAs HBT - for high frequency OSC, LNA @ 2GHz, VDS 2V, IC 3 mA
Part Number
hfe
OIP3 (dBm) @ IC mA
MSG/MAG
NFOPT dB
Ga dB
NE52418
140
+25
18
1.0
17
10
SiGe Prescaler - for PLL
Part Number
Div. ratio
VCC V
ICC mA
fin GHz
PIN dBm
POUT dBm
µPB1512TU*
8
5
50
5 - 13
-8 - +0
-10 - +0
µPB1513TU*
4
5
50
5 - 13
-8 - +0
-10 - +0
* under development
Si MMIC, IF Amplifier @ 1 GHz, VCC 5 V
Part Number
ICC mA
GP dB
NF dB
fu GHz
Po(sat) dBm
P-1dB dBm
∆Gp dB
µPC3225TB
22.0
33.0
3.5
TBD
14.0
8.0
±1.0
µPC3223TB
19.0
23.0
4.5
3.2
12.0
6.5
±0.9
µPC2709TB
25.0
23.0
5.0
2.3
11.5
8.5
±1.0
µPC3224TB
9.0
21.5
4.3
3.2
4.0
-3.5
±0.8
µPC2712TB
12.0
20.0
4.5
2.6
3.0
-2.0
±0.8
Si MMIC, Buffer Amplifier @ 1 GHz, VCC 3 V
Part Number
ICC mA
GP dB
ISO dB
NF dB
P-1dB dBm
F operation GHz
µPC8178TK
1.9
11.0
40
5.5
-5.5
0.1 - 2.4
µPC8179TK
4.0
13.5
43
5
+2.0
0.1 - 2.4
Si MMIC, AGC Amplifier + Video Amplifier @ 45 MHz, VCC 5 V
Part Number
ICC mA
GMAX dB
GMIN dB GCR dB
NF dB
VOUT VP-P IM3 dBc fBW MHZ
µPC3217GV
23
53
0
53
6.5
1.0
50
µPC3218GV
23
63
10
53
3.5
1.0
50
10 - 100
10 - 100
µPC3219GV
36.5
42.5
0
42.5
9.0
1.0
58
10 - 100
Si MMIC, AGC Amplifier, Mixer + Video Amplifier VCC 5 V
(fRF 100 MHz, fLO 136 MHz, PLO -15 dBm, fIF 36 MHz)
Part Number
ICC
mA
CGMAX
dB
CGMIN
dB
GCR
dB
NF
dB
VOCLIP
VP-P
IM3
dBc
fRF
MHZ
fIF
MHZ
µPC3220GR
40
71
24
47
7.0
4.0
56
50 - 250
0.1 - 150
Si MMIC, Down Converter VCC 3 V
(VPS = VCC, PLOin -10 dBm, fRFin = 0.8 GHz, fIFout = 130 MHz)
Part Number
ICC mA
µPC2757TB
5.6
µPC2758TB
11
CG dB
SSB NF dB
Po(sat) dBm
fRFin GHz
fRFout MHZ
15
10
-3
0.1 - 2.0
20 - 300
19
9
+1
0.1 - 2.0
20 - 300
SiGe MMIC, GPS LNA @ 1575 MHz, VCC 3 V
Part Number
ICC mA
GP dB
NF dB
Po(sat) dBm
P-1dB dBm
∆Gp dB
µPC8211TK
3.5
18.5
1.3
+2
-4
0.5
µPC8215TU
10
26
1.5
+4
+0
0.5
SiGe GPS Receiver IC @ 1575 MHz, VCC 3 V
Part Number
Features
µPB1008K
Icc 17.5 mA dual-conversion IQ down converter, on-chip preamplifier
and frequency synthesizer, IF AGC with over 30 dB GCR, 2-bit ADC
µPB1009K
Icc 28 mA, on-chip resonator for VCO, 2nd IF LPF inside,
4-bit ADC and DSP interface, fractional PLL for several TCXO
CMOS SPDT Switch - for antenna, filter or band switching @ 1 GHz
Part Number
VCONT
I mA
LINS dB
ISL dB
PIN(0.1dB) dBm
f GHz
Remark
µPD5710TK
2.8
0.0001
0.60
30
+20
DC - 2.5
Single control
GaAs SPDT Switch - for antenna, filter or band switching @ 2 GHz
Part Number
VCONT
I mA
LINS dB
ISL dB
PIN(0.1dB) dBm f GHz
Remark
µPG2012TK
2.8
0.004
0.30
30
+20.5
0.5 - 2.5
Single control
µPG2015TB
2.8
0.004
0.30
30
+27
0.5 - 2.5
Single control
µPG2030TB
2.8
0.004
0.30
27
+27
0.5 - 2.5
µPG2179TB
2.8
0.004
0.30
27
+27
0.5 - 2.5
µPG2214TK
2.8
0.004
0.30
27
+23
0.05 - 2.5
VCONT 1.8 V - 5.3 V
GaAs DPDT Switch - for antenna diversity switching @ 5.2 GHz
Part Number
VCONT
I mA
LINS dB ISL dB PIN(0.1dB) dBm IIP3 dBm f GHz
Remark
µPG2024TQ
2.8
0.005 1.2
30
+34
+50
4.8 - 5.85
µPG2035T5F
3.0
0.001 1.2
33
+30
+45
4.9 - 6.00 Dual band
3.0
0.001 0.8
34
+31
+45
2.4 - 2.5
@ 2.4 GHz
GaAs Matrix Switch - for antenna diversity switching @ 1.5 GHz
Part Number
VCONT
I mA
LINS dB
ISL dB
PIN(max) dBm
f GHz
µPG188GRK
+5
0.2
7
30
+10
0.9 - 2.15
µPG2053K
+5
0.1
6
38
+10
0.9 - 2.15
Si LD-MOS RF Amplifier IC @ 2.4 GHz, VDS 3.3 V
Part Number
VGS
IDS mA
Gp dB
POUT dBm
PAE%
µPD5702TU
1.9
180.0
21.0
23
28
GaAs HBT Power Amplifier MMIC @ 2.4 GHz, VDS 3.3 V
Part Number
VCONT
VENABLE
ICC mA
ISD µA
Gp dB
POUT dBm
PAE%
µPG2301TQ
2.5
2.9
120.0
0.1
23.0
23
50
Si LD-MOS Medium Power Transistor - for driver, PA
Part Number
f GHz
VDS V
IDQ mA
POUT dBm @ PIN dBm
ηc%
GL dB @ PIN dBm
NE5500179A
1.9
4.8
200
30
20
55
14
10
NE5510279A
1.8
4.8
300
33
25
47
10
10
NE5511279A
0.9
7.5
400
40
27
48
15
5
Si Bipolar Medium Power Transistor - for driver, PA
Part Number
f GHz
VCC V
IQ mA
P1dB dBm
ηc%
GL dB @ PIN dBm
NE678M04
1.8
2.8
10
18
55
13
-5
NE664M04
1.8
3.6
20
26
60
12
15
Si Receiver IC - for RKE, ISM band transceiver (under development)
Part Number
Features
µPC8208K
4 frequency bands (315 MHz, 434 MHz, 868 MHz, 915 MHz), Vcc 2.7 V to 5.5 V
Operating current: 6.5 mA, dual LNA, RF mixer, FSK/ASK demodulator, built-in VCO
Additional recommended products
Si LD-MOS Medium Power Transistor - for driver, PA
Part Number
f GHz
VDS V
IDQ mA
POUT dBm @ PIN dBm
ηc%
GL dB @ PIN dBm
NE5520279A
1.8
3.2
700
32
25
45
10
NE5520379A
1.785
3.2
300
33
25
35
8.5
10
NE552R479A
2.45
3.0
200
26
19
45
11
10
NE552R679A
0.46
3.0
300
28
15
60
20
5
5
Si MMIC, IF Amplifier @ 0.9 GHz, VCC 3 V
Part Number
ICC mA
GP dB
NF dB
fu GHz
Po(sat) dBm
P-1dB dBm
ISL dB
µPC2746TB
7.5
12.0
4.0
1.5
+0.0
-1.0
45
µPC2747TB
6
12.0
3.3
1.8
-7.0
-9.0
40
µPC2749TB
6
16.0
4.0
2.9
-6.0
-7.5
30
µPC2762TB
26.5
13.0
6.5
2.9
+9.0
+8.0
27
µPC2771TB
36
21.0
6.0
2.1
+12.5
+11.5
30
µPC8181TB
23
19
4.5
4.0
+9.5
+8
33
These are just some of the microwave devices that NEC offers in Europe. If you are interested in a product
not mentioned here or if you have any questions about any of the topics covered, more information is
readily available. You can contact NEC Electronics (Europe) directly, your local NEC sales office or a NEC
microwave representative near you.
NEC Electronics (Europe) GmbH
Arcadiastr. 10
40472 Düsseldorf, Germany
Tel. (02 11) 65 030
Fax (02 11) 65 03-13 27
- Podbielskistr. 164
30177 Hannover, Germany
Tel. (05 11) 3 34 02-0
Fax (05 11) 3 34 02-34
- Arabellastr. 17
81925 München, Germany
Tel. (0 89) 92 10 03-0
Fax (0 89) 92 10 03-15
- Industriestr. 3
70565 Stuttgart, Germany
Tel. (07 11) 9 90 10-0
Fax (07 11) 9 90 10-19
NEC Electronics (Europe) GmbH
Sucursal en España
Juan Esplandiu, 15
28007 Madrid, Spain
Tel. (091) 504 27 87
Fax (091) 504 28 60
NEC Electronics (Europe) GmbH
Succursale Française
9 rue Paul Dautier
B.P. 52
78142 Vélizy-Villacoublay Cédex, France
Tél. (01) 30 67 58 00
Fax (01) 30 67 58 99
NEC Electronics (Europe) GmbH
Filiale Italiana
Via Fabio Filzi, 25A
20124 Milano, Italy
Tel. (02) 66 75 41
Fax (02) 66 75 42 99
NEC Electronics (Europe) GmbH
Branch The Netherlands
Boschdijk 187a
5612 HB Eindhoven
The Netherlands
Tel. (0 40) 2 44 58 45
Fax (0 40) 2 44 45 80
NEC Electronics (Europe) GmbH
Tyskland Filial
Täby Centrum
Entrance S (7th floor)
18322 Täby, Sweden
Tel. (08) 6 38 08 20
Fax (08) 6 38 03 88
NEC Electronics (Europe) GmbH
United Kingdom Branch
Cygnus House, Sunrise Parkway
Linford Wood
Milton Keynes
MK14 6NP, United Kingdom
Tel. (0 19 08) 69 11 33
Fax (0 19 08) 67 02 90
Email:
rf-info@ee.nec.de
© NEC Electronics (Europe) GmbH
All product, brand, or trade names used in this
pamphlet are the trademarks or registered
trademarks of their respective owners.
Product specifications are subject to change without
notice. To ensure that you have the latest product
data, please contact your local NEC sales office.
© Published by
NEC Electronics (Europe) GmbH
Printed in Germany, March 2004
Document No. MW_Appl_32004_V1
www.ee.nec.de/microwave