Leading Chip and Packaging Technology
for Highest Energy Efficiency
Silicon Carbide
Power Modules
10kW up to 350kW
Motor
Drives
Solar
Energy
Power
Quality
Power
Supplies
Urban Transport
Equipment
Silicon Carbide Power Modules
Various connection technologies, wide output power range and
highest efficiency are features combined today in SEMIKRON silicon
carbide power modules. Both, hybrid and full SiC modules are available
in five different packages in 1200V and 1700V, optimised for low
inductance and utilizing the unique features of each package.
Benefits
convection cooled design. Finally the overall system efficiency
SEMIKRON hybrid silicon carbide power modules are a solution
can be maximised as well to fulfil the demands of modern
easy to implement for reduced power losses and increased
power conversion systems.
switching frequency. They combine the latest IGBT technology
with SiC Schottky diodes.
Product range
For efficiencies higher than 99%, a minimum of power losses
The products cover a power range from 10kW to 350kW in 1200V
and maximum output power and power density, full silicon
in five different packages. MiniSKiiP and SEMITOP represent the
carbide modules have to be used with SiC MOSFET switches.
low power range up to 25kW, both without a baseplate.
Thanks to the MOSFET’s body diode an external anti-parallel di-
The MiniSKiiP comes with its well proven SPRiNG Technology as a
ode is not required in all cases, but can be beneficial to increase
full SiC 6-pack, with or without SiC Schottky free-wheeling diodes.
the efficiency even further. SEMIKRON supplies power modules
The SEMITOP 3 can be supplied with press-fit or solder connec-
with silicon carbide chips of the leading suppliers, tested to the
tions as a 6-pack with split output configuration, that can flexibly
well known SEMIKRON quality and reliability.
be utilised in a variety of applications.
In the medium power range the 62mm module SEMITRANS 3
Applications
is available as a hybrid SiC half-bridge with 200A rated current
Silicon carbide power modules are the perfect technology to
fast IGBT 4 and a full SiC half-bridge with 350A and 500A rated
create system benefits, both technically and commercially.
current, with and without free-wheeling diodes. For even higher
With the increase of the switching frequency, filter components
output currents the SEMiX3p is available as a hybrid SiC module
like chokes in booster applications or the load side filters of po-
with 600A rated IGBT current as well as the SKIM93 solder-free
wer supplies, UPS or solar inverters can be drastically reduced.
module as a 6-pack with 450A with fast IGBT. The covered voltage
Additionally the power losses are reduced which leads to
range is now extended with a full SiC SEMITRANS 3 in 1700V with
savings in cooling lower fan power, smaller heatsinks
250A rated current, with and without free-wheeling diodes.
or the change of a formerly forced cooled application to a
MiniSKiiP
SEMITOP
SEMITRANS
SKiM 93
10kW
Key features
-- Increased switching frequencies enable optimisation and cost-down of filter components
-- Fully assembled and tested system
-- Reduced power losses lead to increased efficiency and lower system cost and size through
-- Compact and low inductive DC link
smaller cooling devices
assembly supported
-- Latest SiC chips of the leading suppliers
-- Highest environmental protection
-- Various packages and connection technologies with optimised chipsets for your application
SEMIKRON
SEMiX 3p
350kW
Leading Chip and Packaging Technology
for Highest Energy Efficiency
Hybrid SiC modules: high efficiency
at high switching frequencies
silicon carbide Schottky free-wheeling diodes
- Major reduction of switching losses and efficiency increase
- Comparison of SKiM93, 1200V, 450A with medium power
IGBT 4 and silicon free-wheeling diodes to IGBT 4 Fast and
SiC Schottky free-wheeling diodes:
99,5
Efficiency in %
- Hybrid SiC modules combine fast switching IGBT chips with
1200V / 450A SKiM93: Silicon vs. Hybrid SiC
100
99,0
98,5
98,0
97,5
97,0
- Efficiency increase from less than 98% to 99% at 8 kHz
0
2
4
6
8
10
12
14
16
18
20
Switching frequency in kHz
Vdc=800V, Vout=400V, 100kW
- Output power increase by 50% to 130kW at 10kHz
1200V / 450A SKiM 93: IGBT4 + Silicon FWD
1200V / 450A SKiM93: IGBT 4 Fast + SIC Schottky FWD
Full SiC modules: +150% power
output at high switching frequencies
with or without SiC Schottky free-wheeling diodes
- Maximum reduction of switching losses and reduction of static
losses in low load condition thanks to MOSFET characteristic
- Comparison of MiniSKiiP, 1200V, 20A with low power IGBT 4
and SiC MOSFETs with and without free-wheeling diode:
- Efficiency increase to more than 99%
- Output power increase by more than 100%.
8
Output power in kW
- Full SiC modules use the latest generation of SiC MOSFETs,
20A MiniSKiiP: Silicon vs. Full SiC
9
7
6
5
4
3
2
1
0
0 1020 30 4050 60
Switching frequency in kHz
Vdc=560V, Vout=400V, Tj,op=Tj,max - 25°C
Full SiC with FWD
Full SiC without FWD
Silicon
Silicon Carbide chips of the leading suppliers combined
with SEMIKRON packaging technology
- Chip mounting by solder or sinter interconnects for
high temperature operation and highest reliability
- Broad power range in multiple packages
- Soldered or solder-free (spring/press-fit) PCB assembly
- Customer-specific solutions
- Modules with and without baseplate
Topologies
SEMIKRON
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SEMIKRON International GmbH
Sigmundstrasse 200
90431 Nuremberg, Germany
Tel: +49 911 6559 6663
Fax:+49 911 6559 262
sales@semikron.com
www.semikron.com
shop.semikron.com
Note: All information is based on our present knowledge and is to be used for information purposes only. The specifications of our components may not be considered as an assurance of component characteristics.
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05/2016
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