xR SiC Series...
200A - 650V SiC Schottky Diode...
UJ3D065200Z Die Form...
Features
6.97mm
175°C maximum operating junction temperature
Extremely fast switching not dependent on
temperature
Essentially no reverse or forward recovery
Anode Pad
Opening
7.2mm
4.5mm
Positive temperature coefficient for safe operation
and ease of paralleling
Typical Applications
Power converters
Industrial motor drives
Switching-mode power supplies
Power factor correction modules
4.27mm
Part Number
Anode Metal
Cathode Metal
Packaging
UJ3D065200Z
Al (5mm)
Ti/Ni/Ag
(0.1/0.2/1mm)
Die on tape (6")
Descriptions
United Silicon Carbide, Inc offers the xR series of high-performance SiC Schottky diodes. With zero reverse
recovery charge and 175°C maximum junction temperature, USCI’s diodes are ideally suited for highfrequency and high-efficiency power systems with minimum cooling requirements.
Maximum Ratings
Parameter
DC Blocking Voltage
Symbol
VR
Repetitive Peak Reverse Voltage, Tj=25°C
Maximum DC Forward Current (1)
Non-Repetitive Forward Surge Current
Non-Repetitive Avalanche Energy (1)
Maximum Junction Temperature
(1)
Test Conditions
VRRM
Value
650
Units
V
650
V
IF
TC = 107°C
200
A
IFSM
TC = 25°C, 8.3ms
Half Sine Pulse
TBD
A
EAS
Tj = 25°C, L = 10mH,
Ipk=TBD, VDD=100V
TBD
mJ
175
°C
-55 to 175
°C
TJ,max
TJ, TSTG
Operating and Storage Temperature
(1)
Assumes a maximum junction-to-case thermal resistance of 0.15°C/W.
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xR SiC Series...
200A - 650V SiC Schottky Diode...
UJ3D065200Z Die Form...
Electrical Characteristics
TJ = +25°C unless otherwise specified
Parameter
Symbol
Forward Voltage
VF
IR
Reverse Current
Total Capacitive Charge (2)
C
Value
Typ
1.5
Max
1.7
2.25
IF = 200A, TJ = 25°C
Min
-
IF = 200A, TJ =175°C
-
1.95
VR=400V, Tj=25°C
-
10
VR=650V, Tj=25°C
-
350
VR=650V, TJ=175°C
-
TBD
VR=400V
386
VR=1V, f=1MHz
5,000
VR=300V, f=1MHz
640
VR=600V, f=1MHz
580
QC
Total Capacitance
(2)
Test Conditions
1200
Units
V
mA
nC
pF
QC is obtained by integrating the C-V curve.
Typical Performance
7,000
Capacitance, C (pF)
6,000
5,000
4,000
3,000
2,000
1,000
0
0.01
0.1
1
10
100
Reverse Voltage, VR (V)
1000
Figure 1 Capacitance vs. reverse voltage
2
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xR SiC Series...
200A - 650V SiC Schottky Diode...
UJ3D065200Z Die Form...
Mechanical Characteristics
Parameter
Die Dimensions (L x W)
Top Anode Pad Opening (L x W)
Wafer Size
Anode Metallization (Al)
Cathode Metallization (Ti/Ni/Ag)
Die Thickness
Typical Value
4.5 x 7.2
4.27 x 6.97
150
5
0.1/0.2/1
150
Units
mm
mm
mm
mm
mm
mm
Disclaimer
United Silicon Carbide, Inc. reserves the right to change or modify any of the products and their inherent physical and
technical specifications without prior notice. United Silicon Carbide, Inc. assumes no responsibility or liability for any
errors or inaccuracies within.
Information on all products and contained herein is intended for description only. No license, express or implied, to any
intellectual property rights is granted within this document.
United Silicon Carbide, Inc. assumes no liability whatsoever relating to the choice, selection or use of the United Silicon
Carbide, Inc. products and services described herein.
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