Indian Institute of Space Science and Technology Department of Space, Government of India Thiruvananthapuram Curriculum and Syllabus for M.TECH VLSI and Microsystems– R2013 1 2 FIRST SEMESTER Code Course Title Lecture Hours 3 AVM611 Physics of Micro and Nanoelectronic Devices Tutorial Hours 0 Practical Credits 0 Total Credits 4 AVM612 Introduction to Micro Electro Mechanical Systems (MEMS) 3 0 0 4 AVM613 Analog VLSI Circuits 3 0 0 4 AVM614 Digital VLSI Circuits 3 0 0 3 AVM631 VLSI Design lab 0 3 3 1 Total 12 3 3 16 Tutorial Hours 0 0 Practical Credits 0 0 Total Credits 3 3 SECOND SEMESTER Code AVM621 AVM622 E01 E02 AVM641 AVM642 AVM851 AVM852 Course Title Lecture Hours 3 3 Mixed Signal VLSI Design Micro/Nano fabrication technology Elective I Elective II MEMS Lab Microelectronics Lab Seminar Comprehensive viva Total 3 3 0 0 0 0 12 3 0 0 3 3 0 0 6 0 0 3 3 0 0 6 3 3 1 1 2 2 18 THIRD SEMESTER Code E03 AVM853 Course title Lecture Hours Elective III 3 M-Tech Project0 Phase-I Total 3 Tutorial Hours 0 0 Practical Credits 0 0 0 0 Total Credits 3 15 18 FOURTH SEMESTER Code AVM854 Course Title M-Tech Phase-II Total Lecture Hours Project0 0 Tutorial Practical Hours Credits 0 0 0 ELECTIVE COURSES Course Code AVM 861 AVM 862 AVM 863 AVM 864 AVM 865 AVM 866 AVM 867 AVM 868 AVM 869 AVM 870 AVM 871 Course Name RF MEMS High frequency VLSI circuits Thin films: Materials and characterization VLSI Digital Signal Processing MEMS Integration Sensors and Actuators Power semiconductor devices Compound semiconductor devices and Technology EDA Principles and Practices Microfluidics and Bio-MEMS Testing and Verifications of VLSI circuits 4 0 Total Credits 18 18 AVM611 Physics of Micro and nanoelectronic Devices (3- 0 - 0) 3 credits Review of quantum mechanics, E-k diagrams, effective mass, electrons and holes in semiconductors, band diagram of silicon, carrier concentration, carrier statistics, career transport, junction devices(P-N junction, Metal –semiconductor junctions, solar cells etc), MOS capacitor as a building block for MOSFETs (Ideal MOS, real/Non ideal MOS, band diagrams, C-V characteristics, electrostatics of a MOSCAP), MOSFET, I-V characteristics, scaling, short channel and narrow channel effects, high field effects, Transport phenomenon in nanoelectronic devices (CNTFETs, Graphene Transistors) Texts/References: 1. Donald A Neamen, Semiconductor Physics and Devices: Basic Principles, McGraw-Hill (1997) ISBN 0-256-24214-3 2. Yuan Taur & Tak H Ning, Fundamentals of Modern VLSI Devices, Cambridge University Press, 1998 3. Robert F. Pierret, Semiconductor Device Fundamentals, Addison-Wesley (1995), ISBN 020154393-1 4. E. H. Nicollian and J. R. Brews, MOS Physics and Technology, John Wiley, 1982. 5. K. K. Ng, Complete Guide to Semiconductor Devices, McGraw Hill, 1995. 6. D.K. Schroder, Seminconductor Material and Device Characterization, John Wiley, 1990. Introduction to Micro Electro Mechanical Systems AVM612 (3- 1 - 0) 4 credits History of Microsystem Technology with overview on commercial products Scaling laws, Microelectronic technologies for MEMS ,Materials and processing for MEMS, Micromachining Technology: Surface and Bulk Micromachining, Microsystem Modelling, Mechanical Analysis, Transduction Mechanisms (optical, piezoelectric, piezoresistive etc.), MEMS Micro sensors, and applications (Mechanical, Inertial, Biological, Chemical, RF Applications etc.), Bonding & Packaging of MEMS, MEMS reliability, scaling in MEMS, recent research directions in MEMS (eg. CMOS-MEMS integration, Polymer MEMS, NEMS etc…) Texts/References: 1. S. D. Senturia, Microsystem Design (2005 edition) 2. Tai-Ran Hsu MEMS & Microsystems: Design, Manufacture, and Nanoscale Engineering, 2nd Edition 3. Marc Madau, Fundamentals of Microfabrication Science of Miniaturization, CRC Press 4. G. K. Ananthasuresh , K. J. Vinoy, S. Gopalakrishnan, K. N. Bhat , V. K. Aatre Micro and Smart Systems Technology and Modeling (January 2012) 5. Minhang Bao "Analysis and Design Principles of MEMS Devicess", Peer reviewed international journals such as IEEE/ASME Journal of MEMS, IOP Journal of Micromechanics and Microengineering, IOP Journal of Nanotechnology, Elseivier Sensors and Actuators etc. and conference proceedings such as IEEE MEMS, IEEE Nanotechnology, Transducers etc.. 5 AVM622 Micro/Nano Fabrication Technology (3- 0 - 0) 3 credits Classical scaling in CMOS, Moore’s Law, Clean room concept, Material properties, crystal structure, lattice, Growth of single crystal Si, Cleaning and etching, Thermal oxidation, Dopant diffusion in silicon, Deposition & Growth (PVD, CVD, ALD, epitaxy, MBE, ALCVD etc.),Ionimplantation, Lithography (Photolithography, EUV lithography, X-ray lithography, e-beam lithography etc.), Etch and Cleaning, CMOS Process integration, Back end of line processes (Copper damascene process, Metal interconnects; Multi-level metallization schemes), Advanced technologies(SOI MOSFETs, Strained Si, Silicon-Germanium MOS, metal semiconductor source / drain junctions, High K, metal gate electrodes and work function engineering, Double gate MOSFETs, FinFETs, TunnelFETsetc..) , emerging research devices and architectures (Nanowire FETs, CNT FETs, Graphene transisors, Organic FETs etc..) Texts/References: 1. James Plummer, M. Deal and P.Griffin, Silicon VLSI Technology, Prentice Hall Electronics 2. Stephen Campbell, The Science and Engineering of Microelectronics, Oxford University Press, 1996 3. S.M. Sze (Ed), VLSI Technology, 2nd Edition, McGraw Hill, 1988 4. C.Y. Chang and S.M.Sze (Ed), ULSI Technology, McGraw Hill Companies Inc, 1996. Peer reviewed international journals such as IEEE Electronic Device Letters, Transactions on Electron Devices, Journal o Microelectronics, etc and conference proceedings such as International Electron Device Meeting (IEDM), IRPS etc.. 6 AVM614 Digital VLSI circuits (3- 0 - 0) 3 credits Overview of CMOS device fundamentals (DC Characteristics,AC Characteristics, Processing overview) CMOS inverters, combinational logic and sequential CMOS logic, Modeling of interconnect wires. Optimization of designs with respect to cost, reliability, performance, and power dissipation. Sequential circuits:-timing considerations, and clocking approaches. Design of large system blocks, including arithmetic, interconnect, memories, and programmable logic arrays VLSI design: Introduction, Process, Architectural design, Logic design, Physical design Layout styles: Custom layout, Gate-array layout, Standard-Cell layout, Macro-Cell layout, PLA, FPGA layout. Circuit partitioning: Problem definition, Cost function constraints, approaches to partitioning problem. Placement: Complexity of placement, Problem definition, estimation of wire-length. Floor planning: Floor planning model, Cost functions, terminology. Grid routing, Global routing, Channel routing Design Technology: Introduction to Hardware Description Language Layout Generation and Verification: Behavioral, Structural, Physical level Texts/References: 1. CMOS VLSI design: A circuits and systems perspective, Neil H.E. Weste, David Money Harris, Addison-Wesley(Pearson) 2. J.M. Rabaey, A. Chandrakasan and B. Nikolic, Digital Integrated Circuits- A Design Perspective, 2nd ed., PHI, 2003 3. CMOS digital integrated circuits: Analysis and design, Sung-Mo Kang, Yusuf Lablebici, TATA McGraw-Hill 4. Theoretical foundation of VLSI design, edited by K. McEvoy, J.V. Tucker, Cambridge University Press 5. VLSI Physical design automation: Theory and Practice, Sadiq M. Sait, Habib Youssef, World Scientific Publishing 6. VLSI Circuit Layout: theory and design, Edited by T.C Hu, Ernest S. Kuh, IEEE Press 7. VLSI design: A Practical guide for FPGA and ASIC implementation, Vikram Arkalgud Chandrasetty, Springer 8. VLSI design techniques for Analog and Digital circuits, Randall L. Geiger, Phillip E. Allen, Noel R. Strader, McGraw- Hill Publishing company AVM613 Analog VLSI Circuits (3- 1 - 0) 4 credits Introduction to VLSI analog circuits, MOSFET models, common source amplifier with resistive load, diode connected load, current source load, cascade and folded cascode amplifiers, passive and active current mirrors, frequency response and noise, MOS differential amplifier, single stage and two stage operational amplifiers, compensation techniques, Direct coupled amplifiers, switched capacitor circuits, , LC VCO,Data converters: Working principle and 7 architecture of a folding-and-interpolation ADC, Design of sample and hold amplifier, Design of folding amplifier and interpolation network, Design of decimation filter, Working principle and architecture of a Sigma-delta ADC, Design of basic and multistage sigma-delta converters, Working principle and architecture of a pipeline ADC. Text/References: 1. Design of Analog CMOS Integrated Circuits by Behzad Razavi ,Tata McGraw Hill 2. David A Johns & Ken Martin, Analog Integrated Circuit Design, John Wiley and Sons 3. Philip Allen & Douglas Holberg, CMOS Analog Circuit Design, Oxford University Press, 2002. 8 AVM621 Mixed Signal VLSI Design (3- 0 -0) 3 credits Analog and discrete-time signal processing, Review of continuous-time filters, Discrete-time filters, Analog and discrete-time signal processing, Analog integrated continuous-time and discrete-time (switched-capacitor) filters.Basics of Analog to digital converters (ADC), Basics of Digital to analog converters (DAC), DACs, Successive approximation ADCs, Dual slope ADCs, High-speed ADCs (e.g. flash ADC, pipeline ADC and related architectures), High-resolution ADCs (e.g. delta-sigma converters), signal conditioning circuits with data converters, Characterization of a comparator, basic CMOS comparator design, analog multiplier design, signal integrity issues in modern VLSI circuits, high-speed I/O circuits, Mixed-Signal layout, Interconnects, Phase locked loops, Delay locked loops. Texts/References: 1. R. Jacob Baker, “CMOS mixed-signal circuit design” , Wiley India, IEEE press, reprint 2008. 2. Behzad Razavi “Design of analog CMOS integrated circuits”, McGraw-Hill, 2003. 3. CMOS circuit design, layout and simulation by R. Jacob Baker, Revised second edition, IEEE press, 2008. 4. Rudy V. de Plassche “CMOS Integrated ADCs and DACs”, Springer, Indian edition, 2005. 5. Gordon Roberts, Friedrich Taenzler, Mark Burns, “An introduction to mixed-signal IC test and measurement., Oxford university press, first Indian edition, 2008 6. Arthur B. Williams “Electronic Filter Design Handbook”, McGraw-Hill, 1981. 7. R. Schauman “Design of analog filters”, Prentice-Hall 1990 (or newer additions). Lab courses AVM641 MEMS Lab (0- 0 -3) 3 credits Module 1: Design and simulation This module focuses on design and simulation aspects of sensors, actuators and sensor systems. The laboratory course provides an overview of numerical and analytical modelling and design of microsystems using leading softwares in the field such as TCAD for MEMS Module 2 Fabrication and characterization of MEMS devices 1. Familiariztion of unit processes 2. Familiarization of analytical characterization techniques: thin film thickness measurement using reflectance and ellipsometry techniques, 4-point probe for sheet resistance measurement, micro-stylus step height measurement, AFM, FTIR, XRD, SEM, ,LDV, Nanoindentation 3. Fabrication of MEMS structures such as Microcantilever beam/suspended membrane etc.. 4. Characterization of MEMS structures Texts/References: (List same as that for the theory courses on MEMS and Thin films) 9 AVM631 VLSI Design Lab (0- 0 -3) 3 credits Design of a complex digital circuit (eg. an ALU or a multiplier) using high level ardware description languages, logic simulation and timing simulation. Extraction of critical paths and circuit simulation of critical path sub-circuits. Circuit partitioning and realisation using FPGAS or PALS. Design of an analog circuit (eg. a filter) using circuit simulation. Setting up macromodels for subcircuits (eg. for OPAMPS). Construction and performance verification for the circuit. Simulation of transmission line effects in a circuit layout/ post layout simulation.. Project type experiments using a variety of techniques learnt in the course for realising circuit modules. Introduction of software: Analog design flow, digital design flow, integration with SCL technology file. AVM642 Microelectronics lab (0- 0 -3) 3 credits Module 1: Microelectronics Device and Process Simulation This module focuses on the simulation of fabrication processes and the microelectronics devices such as short channel MOSFET, solar photo voltaic device etc.using TCAD tools. The process simulation enables one to experiment with the device fabrication flow. The device simulation involves simulating the electrical characteristics of a process simulated/fabricated device. Module 2: Microfabrication and characterization 1. Familiarization of Microfabrication environment in clean room 2. Familiarization of different unit processes, Fabrication of MOS Capactior 3. Electrical characterization: High frequency capacitance-voltage measurement (HFCV) and High frequency capacitance-voltage measurement (LFCV), I-V and reliability measurements, parameter extraction of MOS devices Elective Courses AVM866 Sensors and Actuators (3- 0 -0) 3 credits Introduction and historical background, Microsensors : Sensors and characteristics, Integrated Smart sensors, Sensor Principles/classification-Physical sensors ( Thermal sensors, Electrical Sensors, tactile sensors, accelerometers, gyroscopes , Proximity sensors, Angular displacement sensors, Rotational measurement sensors, pressure sensors, Flow sensors, MEMS microphones etc.), Chemical and Biological sensors (chemical sensors, molecule-based biosensors, cell-based biosensors), transduction methods(Optical, Electrostatic, Electromagnetic, Capacitive, Piezoelectric, piezoresistive etc.), Microactuators : Electromagnetic and Thermal microactuation, Mechanical design of microactuators, Microactuator examples,-microvalves, micropumps, micromotors-Microactuator systems : eg. Ink-Jet printer heads, Micro-mirror TV Projector. 10 Introduction to interfacing methods: bridge circuits, Programmable gain instrumentation amplifiers, A/D and D/A converters, microcontrollers Applications and case studies: Microsensors and actuators in environmental sensing, RF/Electronics devices, Optical/Photonic devices, microsensors for space applications, MEMS sensors in navigation systems, radiation sensors, Medical devices, Bio-MEMS Texts/References 1. Micromechanical Transducers: Pressure sensors, accelrometers, and gyroscopes by M.H. Bao, Elsevier, New York, 2000 2. "Microsensors" by Richard S. Muller, Roger T. Howe, Stephen D. Senturia, Rosemary L. Smith, and Richard M. White, IEEE Press, IEEE Number PC 0257-6, ISBN 0-87942-254-9, New York, 1991. 3. "Micromechanics and MEMS: Classic and Seminal Papers to 1990. " by William Trimmer, IEEE Press, IEEE Number PC4390, ISBN 0-7803-1085-3, New York. 4. Beckwith T. G., Margoni R. D., Lienhard J. H. “Mechanical Measurements”, New York: Addison-Wesley Pub. Co, 1995 5. G. K. Ananthasuresh, K. J. Vinoy, S. Gopalakrishnan, K. N. Bhat, and V. K. Aatre, Micro and Smart Systems’, Wiley-India, 2010. AVM861 RF MEMS (3- 0 -0) 3 credits Introduction to RF MEMS, , Electrical and mechanical modelling of MEMS devices, MEMS Switches: Introduction to MEMS switches; Capacitive shunt and series switches: Physical description, circuit model and electromagnetic modelling; Techniques of MEMS switch fabrication and packaging; Design of MEMS switches. RF Filters and Phase Shifters: Modeling of mechanical filters, micromachined filters, surface acoustic wave filters, micromachined filters for millimeter wave frequencies; Various types of MEMS phase shifters; Ferroelectric phase shifters. MEMS Varactor, MEMS Resonators micromachined waveguide components; Micromachined antennas: Micromachining techniques to improve antenna performance, reconfigurable antennas. Integration and Packaging for RF MEMS: Role of MEMS packages, types of MEMS packages, module packaging, packaging materials and reliability issues. Texts/References: 1. Varadan, V.K., Vinoy, K.J. and Jose, K.J., “RF MEMS and their Applications”, John Wiley & Sons. 2002. 2. Rebeiz, G.M., “MEMS: Theory Design and Technology”, John Wiley & Sons. 1999. 3. De Los Santos, H.J, “RF MEMS Circuit Design for Wireless Communications”, Artech House. 1999 4. Research papers and study material of Clark T.-C. Nguyen, Electrical Engineering and Computer Sciences , UC Berkeley Nguyen Book to be added 11 AVM 863 Thin films: Materials and characterization (3- 0 -0) 3 credits Material Science: introduction, structure, defects, bonds and bands, thermodynamics of material, kinetics, nucleation. Thin film nucleation: Atomic view of substrate surfaces, thermodynamic aspects of Nucleation, Kinetic processes in Nucleation and growth. Epitaxy: Lattice mismatch and defects in epitaxial film, epitaxy of compound semiconductors, High and low temp. methods of deposition. Characterization of thin films: structural and chemical characterization of films and surfaces. XRD, TEM, AFM, SEM, Inter diffusion: compound formation, phase transformation in thin film, metal-semiconductor reaction, mass transport in thin film. Mechanical properties of thin films: Mechanical testing and strength of thin films, analysis of internal stress, Texts/References: 1. Micro- and Opto- Electronic Materials and Structures: Ephrahim Suhir, Y.C Lee, C. P Wong 2. Thin Film Phenomena: Kasturi L. Chopra 3. Thin Film Device Applications: Kasturi L. Chopra, Indrajeet Kaur 4. The materials Science of Thin Films: Milton Ohring 5. Hand book of thin films deposition processes and techniques; Priciples, methods, equipment, and application: Klaus K. Schuegraf 6. Thin Film Physics: O. S. Heavens AVM 865 MEMS Integration (3- 0 -0) 3 credits MEMS – An Overview, Miniaturisation, MEMS and Microelectronics -3 levels of Packaging. Critical Issues viz., Interface, Testing & evaluation. Packaging Technologies like Wafer dicing, Bonding techniques, Sealing. Design aspects and Process Flow, Materials for Packaging, Top down System Approach, Electron Beam welding and Laser welding. Vacuum Packaging. 3D Packaging. Micro Assembly techniques, Testing and Design for test. Packaging for Medical Applications, Bio Chips / Lab-on-a chip and micro fluidics, RF Packaging, Optical Packaging, Packaging for Aerospace applications. , Transduction and Special packaging requirements (Oil Filling, Purging, Inert Gas filling, Thermal, Shock, Vibration, EMI/EMC etc,) for Absolute, Gauge and differential Pressure measurements, , Accelerometer and Gyro packaging techniques, Environmental Protection and safety aspects in MEMS Packaging. Reliability Analysis, FMECA and Media Compatibility, Packaging Strategy and Trends, Standardisation of Interfaces, Case Studies – Challenges/Opportunities/Research frontier. Texts/References: 1. Tai-Ran Hsu, MEMS PACKAGING, INSPEC, The Institution of Electrical Engineers, London,UK,2004. 12 2. Tai-Ran Hsu, MEMS & MICRO SYSTEMS Design and Manufacture, Tata McGraw Hill, New Delhi,2002 3. John H Lau, Cheng Kuo Lee, C.S. Premchandran, Yu Aibin, Advanced MEMS Packaging, McGraw Hill, 2010 4. International Packaging work shop held at CeNSE , IISc on 29,30th September, 2011. (notes) 5. Web-based literature. High frequency VLSI circuits (RF AVM 862 Microelectronic Circuits) (3- 0 -0) 3 credits Overview of RF system: Introduction to RF Transceiver architectures, Multiple access techniques, Different wireless standards, Various modulation techniques used in RF system; Aspects and considerations of RF design: Low voltage and low power design, RF-models of devices; Building blocks of RF: Design of oscillator and mixer, Frequency synthesizer, Design of low noise amplifiers, Design of narrowband and wideband amplifiers, Design of high efficiency power amplifier, Matching network design; RF system design and testing: Design of RF system, Noise and distortion measures and mitigation methods. Texts/References: 1. Sorin Voinigescu “High frequency Integrated Circuits” Cambridge university press 2. B. Razavi, RF Microelectronics, NJ: Printice Hall, Upper Saddel River, 1998 3. Robert Caverly, “CMOS RFIC Design Principles” Artech House AVM 864 VLSI Digital Signal Processing (3- 0 -0) 3 credits Introduction to Digital Signal Processing ; Need of VLSI DSP algorithms. main DSP Blocks and typical DSP Algorithms. Number Representation: Fixed point Representation Floating point Representation; Binary Adders; Binary Multiplier; Binary Dividers; Floating point Arithmetic Implementation: CORDIC architectures; Multiply Accumulator unit ; Computation of Special functions using MAC cells. Redundant arithmetic, redundant number representations , carry free radix 2 addition and subtraction . Hybrid radix 4 addition. Radix 2 hybrid redundant multiplication architectures , data format conversion. Redundant to nonredundant converter. Numerical strength reduction. Bit level arithmetic structures- parallel multipliers, interleaved floor plan and bit plan based digital filters. Bit serial multipliers. Bit serial filter design and implementation. Canonic signed digit arithmetic, Distributed arithmetic. Synchronous pipelining and clocking styles, clock skew and clock distribution in bit level pipelined VLSI designs. Parallel FIR filters. Pipelining of FIR filters. Parallel processing. Pipelining and parallel processing for low power FIR filters. Pipeline interleaving in digital filters. Pipelining and parallel processing for IIR filters. Low power IIR filter design using pipelining and parallel processing, Pipelined adaptive digital filters. Systolic Array Architectures and fast convolution algorithms. Round off noise and its computation. State variable description of digital filters, Scaling using slow-down, retiming and pipelining. Texts/References: 13 1. Keshab K. Parhi, VLSI Digital Signal Processing Systems - Design and Implementation, Wiely, 2010 2. K. J. Ray Liu, High-Performance VLSI Signal Processing – Innovative Architectures and Algorithms, Systems Design and Applications, IEEE Press, 1998 3. Thorsten Grotker, et al, System Design with SystemC, Kluwer Academic Publishers, 2002 4. U Meyer Baese Digital Signal Processing with Field Programmable Gate Arrays Springer 2009 5. Roger Woods …[et al]. FPGA-based Implementation of Signal Processing Systems/ (2008). 6. Jose E. France, Yannis Tsividis,“Design of Analog-Digital VLSI Circuits for 7. Telecommunication and Signal Processing”, Prentice Hall, 1994. AVM 867 Power semiconductor devices (3- 0 -0) 3 credits Introduction to Power Semiconductor devices, Device Basic Structure and Characteristics , High current effects in diodes, Breakdown considerations for various devices, Junction Termination techniques for increasing breakdown voltage, edge termination in devices, beveling, open base transistor breakdown Structure & Performance of Schottky and PIN Power Diodes , Parasitic Circuit Elements in Power Diode Recitifiers, Circuit Requirements for Power Transistor Switches,Structure & Performance of Power Transistors: a. MOSFETs; b. BJTs and IGBTs, Parasitic Circuit Elements in Power Transistor Switches , Circuit Requirements for PNPN Thyristors, Structure & Performance of PNPN Thyristors, Parasitic Circuit Elements in PNPN Thyristors, Implementation of Power Electronic Devices using SiC & GaN, Heat transfer in power devices, packaging of power devices Texts/References: 1. Baliga,G.J., Fundamentals of Power Semiconductor Devices ,Springer. 2. S.M. Sze, Physics of Semiconductor Devices, 2nd ed., Wiley, 1981. 14