ELE 412: Semiconductor Devices
(Fall-2008)
Team
Lecturer
Teaching Assistant
Dr Ayhan Ozturk
None
Room Number: 3111
Room Number:
Office Phone: 0212 285 35 54
Office Phone:
E-mail: ozayan@itu.edu.tr
E-mail:
URL: http://atlas.cc.itu.edu.tr/~ozayan
URL: http://atlas.cc.itu.edu.tr/~
Office Hours: Tuesday, 17:00-17:30;
Office Hours:
Friday,
16:00-17:30
Course
CRN: 11267
Prerequisites: None
Classroom: D5301
Course Hours: Tue, 14:00-17:00
Timing
Calender: September the 15th, 2008 - January the 02th, 2009
Fall Term:
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Lectures: 12 weeks
Exams: 2 weeks
Attendance:
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8 Weeks Lectures + 2 Weeks Exams
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Student cannot leave the room up to end of the lecture hour
Assignments are due: 1 week (unless otherwise specified), after issuing
Examination
Quizzes:
Books and notebook are closed
Midterm and Final:
Books and notebook are closed
Lecture notes (slide handouts ) can be only used during the examination.
Week#
Midterm Exam#1
Midterm Exam#2
Quiz#1
5
10
14
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U n i v e r s i t y
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Grading
ELE 412
Number of Exams /
Assignments
Partial Weight
Total Weight
Midterm Exam
2
20%
40%
Quizzes
1
08%
08%
Assignments1
3
4%
12%
Ethics
1
+5p
+5p
ABET Paper
For each
+1p
Final Exam
1
40%
40%
1: In case of cancelation of assignments, their points will be added to midterm exams.
Over All Class Assessment: Bell Curve System
Course Objectives
At the end of the course, students should be able
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To understand clearly the basic principles of semiconductor devices
To understand clearly effects of various processes on device characteristics
To design new semiconductor devices
Tentative Outlines
Lecture#1: Semiconductor Fundamentals
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Introduction
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Crystal structures
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Bohr’s Atom Model
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Energy band diagram
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Terms
Lecture#2: Carrier Populations
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Terms
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FD Distribution Function
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Density of States
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Electron population
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Hole population
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Fermi Levels
Lecture#3: Macroscopic Carrier Transport
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Transport Mechanisms
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Scattering events
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Generation and Recombination Processes
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Transport Characteristics
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Drift velocity and mobility
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Conductivity and Resistivity
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Drift and Diffusion Current Densities
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Transport Models
Lecture#4 pn Junctions
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Layout and Doping Profile
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Electrostatic Characteristics
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Energy Band Diagrams
Lecture#5: Non-equilibrium state of pn-junction
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Forward biasing characteristics
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Reverse biasing characteristics
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Metal-Semiconductor Junctions
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Heterostructures
Lecture#6: Metal/Oxide/Semiconductor Stacks
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Band Diagrams
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Work functions
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Flat-band voltage
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MOS Capacitor
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MOS Capacitor Operation Modes
Lecture#7 MOS Transistor (MOSFET)
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Fundamentals
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MOS Capacitor
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I-V Characteristics
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Modelling
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Oxide Charges
Lecture#8: More on MOSFET
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Threshold Voltage Control
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Scaling Theory
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Secondary Effects
Lecture#9: pn-Junctions I&V
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I-V characteristics
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Generation-Recombination Currents
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Transient Characteristics
Lecture#10: Bipolar Junction Transistor (BJT)
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Fundamentals
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U n i v e r s i t y
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I-V Characteristics
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Transient Characteristics
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Modelling
Lecture#11: Secondary effects in BJTs
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Early effect
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Kirk effect
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High injection
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Current crowding
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Non-uniform doping
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Band gap narrowing
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BJT scaling
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BJT Ebers-Moll macro model
Lecture#12: Miscellaneous issues on BJT
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New type of transistors
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New device paradigms
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Low temperature device operation
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Semiconductor characterisation
Text Books
[1] Anderson, B L, Anderson, R L, Fundamental of Semiconductor Devices, McGraw-Hill, 2005.
[2] Yang, Edward S., Microelectronic Devices, Singapore: McGraw-Hill, 1988.
Ancillaries
Some Proprietary Software Packages:
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PISCES (Stanford University)
MINIMOS (Technical University of Vienna)
DAMOCLES (IBM)
ATLAS (Silvaco: www.silvaco.com )
MEDICI (Synopsys: www.synopsys.com)
Academic Ethics
All assignments should be student own work. Simply copping someone else’s homework is unethical. It will be
considered as cheating. All kind of cheating will be punished.
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Students are encouraged to discuss the problems together.
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It is responsibility of each student to save his/her work.
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Cheating in any work brings zero point
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Signing in for someone else drops lecture visa
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Dissection of Ethics Points(+5p)
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Original HWs:
Original Exams:
Attendance:
30%
30%
40%
Bibliography
[1] Leblebici, D, Elektronik Elemanlari, IST: Sistem, 2002.
[2] Streetman, Ben G., Solid State Electronics Devices, 4th Ed., NJ: Prentice-Hall, 1995.
[3] Pierret, R F, Semiconductor Device Fundamentals, MA: Addison-Wesley, 1996.
[4] Brennan, K, Introduction to Semiconductor Devices, NY: Cambridge University Press, 2005
[5] Taur, Y, Ning, T, Fundamentals of Modern VLSI Devices, NY: Cambridge University Press, 1998.
[6] Fonstad, Clifton G., Microelectronic Devices and Circuits, Singapore: McGraw-Hill, 1994.
[7] Dutton, R. W., and Yu, Z , Technology CAD, Mass: Kluwer, 1993.
[8] Roulston, D J, Bipolar Semiconductor Devices, NY: McGraw-Hill, 1990.
[9] Rechard, Muller RS, and Kamins, T I, Device Electronics for Integrated Circuits, NY: Wiley, 1986.
[10] Cilingiroglu, U, Systematic Analysis of Bipolar and MOSFET Transistors, Mass: Artech House, 1993.
[11] Neamen, D A, Semiconductor Physics and Devices, NY: McGraw-Hill, 2003.
[12] Sze, S. M., Physics of Semiconductor Devices, 2nd Ed., Singapore: Wiley, 1981.
[13] Wang, Shyh, Fundamentals of Semiconductor Theory and Device Physics, NJ: Prentice-Hall, 1989.
[14] Sah, C-T, Fundamentals of Solid-State Electronics, Singapore: World Scientific, 1991.
[15] Lundstrom, M, Fundamentals of Carrier Transport, 2nd ed, UK: Cambridge University Press, 2000.
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