Advanced Semiconductor
Manufacturing Conference and Workshop
.
World Class Manulacluring
2003
IEEE/SEMIB
Advanced
Semiconductor
Manufacturing
Conference
And Workshop
‘Advancing the Science of Semiconductor ManufacturingExcellence”
ASMC 2003 PROCEEDINGS
The IEEE/SEMI Advanced SemiconductorManufacturing Conference and Workshop is an
annual forum that provides a venue for the presentation of methodologies, approaches and
techniques required to achieve world-class semiconductor manufacturing. A key role this
conference plays is in promodng interaction among semiconductor professionals at al! levels. The
goal and objective of the conference are to assist in making the participating companies more
knowledgeable of semiconductor production methods, encourage open communication between
participants, and develop the strategic relationship between users and suppliers needed to achieve
manufacturing excellence and improve global competitiveness.
31 March - 1 April, 2003
Munich, Germany
2003 IEEUSEMI Advanced Manufacturing Conference
2003 PROCEEDINGS
IEEE/SEMI ADVANCED SEMICONDUCTOR
MANUFACTURING CONFERENCE AND
WORKSHOP (ASMC)
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Refer to the IEEE Catalog Number, printed below:
IEEE Catalog Number:
03CH37406
ISBN Number:
0-7803-7673-0
ISSN:
.1078-8743
Layout, composition and compilation by
Semiconductor Equipment and Materials Intemational (SEMI?
U
2003 IEEWSEMI Advanced Manufacturing Conference
ABOUT THE ASMC SPONSORS
&semi-
Representing more than 2,500 member companies, Semiconductor Equipment and Materials
Jnternational (SEMI) is the trade association serving the global semiconductor equipment, materials and ilat panel display
industries. Since its inception in 1970. SEMI has played an increasingly vital role in industry expansion, visibility. and
representation. SEMI strives to foster growth and development of both member corporations and the professionals within them
through business and technical education; workforce development; standards development; public policy initiatives; and
international trade shows. Through these efforts, SEMI continues IO promote and nurmre its members and their $100 billion global
markets, which represents a significant contribution to the world economy.
SEMI is headquanered in San Jose, California, USA with offices in Austin, Beijing, Boston, Brussels, Hsinchu, Moscow, Seoul,
Singapore, Tokyo and Washington, D.C. For more about SEMI, visit w . s e m i . o r g .
The Electron Devices Society (EDS) and the Components, Packaging. & Manufacturing Technology
(CPMT) Society are two of the 37 technical societies within the Institute of Electrical and Electronics
Engineers, which, in turn,is the largest professional engineering organization in the world with over 350,000
members. It is transnational, with conferences and chapters in most counmes. EDS and CPMT also sponsor a
number of other related conferences:
IEEE
Networking
the World"
.
..
VLSI Chip Packaging Workshop
Semiconductor Thermal and Temperature Management (SEMI-THERM) Symposium
International Electron Devices Meeting (IEDM)
Jnternational Symposium on Semiconductor Manufacnuing (ISSM)
Intersociety Conference on Thermal Phenomena in Electronic Systems (I-THERM)
Electronic Components & Technology Conference (ECrC)
lntemational Electronic Manufacturing Technology (IEMT) Symposium
Copies of past proceedings of some of these conferences are available for purchase. In addition, EDS and CPMTS publish the
Transactions on Semiconductor Manufacturing, the archival joumal in this field. We invite you to consider membership for one of
the IEEE Societies and to participate with us in funhering advancements in these fields. If you already belong to another
professional society, you can affiliate with EDS or CPMT at reduced fees. Please refer to the back cover for additional information.
MICRO
MICRO magazine is the ultimate focused editorial and advertising vehicle for professionals concemed with defect reduction,
process control. and yield enhancement s t r a t e ~ e sin the semiconductor, semiconductor equipment and materials, and related
advanced microelectronics manufacturing indusmes. The magazine and its web site - www.micromagadne.com - offer a
comprehensive, practical, and timely mix of technical articles and industry and product technology news coverage to a global
audience. Since 1983. MICRO has been a leader in providing reliable. in-depth information to its readers in the semiconductor
manufacturing community. MICRO magazine -- proud cosponsor of ASMC 2001 and member of SEML
iii
2003 IEEWSEMI Advanced Manufacturing Conference
2003 ASMC ORGANIZING COMMITTEE
Our special appreciation to the following people who together volunteered countless hours to the organization
of the 2003 IEEUSEMI Advanced Semiconductor Manufacturing Conference and Worhhop:
General Chair:
Mart Graef, Philips Semiconductors
Conference Chair:
Charlie Pappis, Applied Materials, Inc.
Technical Co-chairs: Giorgio de Santi, STMicrwlectronics; Otto Graf, Mineon Technologies AG
Duane Boning, MIT - Dept. of EEBrCS
Mark Bums, KLA-Tencor
Tom Carbone, Fairchild Semiconductor
Tom Cheyney, MICRO Magazine
Philip Clark, FSI Intemational
John Conway, Intel Corp.
Craig Core, Analog Devices
Chris Demetrius, CWD Sales
Johann Domer, IPA Fraunhofer Institute
Jod Estabil, KLA-Tencor corporation
Pascal Etman, Eiudhoven University of Technology
Ahmad Fathulla, Infineon Technologies Villach
Patricia Gabella, Advanced Micro Devices
John Goodman, Entegris, Inc.
David Gross, Advanced Micro Devices
Christpher Hess, PDF Solutions, Inc.
Karl Hirschmann, RIT Microelectronic Engineering
Dan Iversen, Texas Instruments
Gary Johnson, IBM Microelectronics
Thomas Kaufmann, Communicant Semiconductor
Technologies AG
Greg Klusewitz, Fairchild Semiconductor
Patrice Koch, Lam Research Corp.
Fred Lakhani, International SEMATECH
Timothy Lash, National SemiconductorCorporation
Fourmun Lee, ASM America, Inc.
Michael Linder, Caning Inc.
Christopher Long, IBM Microelectronics
Scott McClure, IBM Microelectronics
Winfried Meier, Nikon Precision Europe GmbH
Hanno Melzner, Infineon Technologies AG
William Miller, IBM Microelectronics
Kevin Nason, Fairchild semiconductor
Oliver Patterson, Agere Systems
Robert Pearson, Virginia Commonwealth University
Thomas Piliszczuk, KLA-Tencor France
Jeff Roulx, DuPont Photomasks
Koos Rooda, Eindhoven University of Technology
Walter Schoenleber, Applied Materials Europe
Wanda Tomlinson, IBM Microelectronics
Willam Tyler, FSI International
Jacek Tyminski, Nikon Precision Inc.
Peter Van der Meulen, Brooks-PRl Automation
Frans van Lierop, ASM Lithography
Robert Virgalla, Ultratech Stepper
Paul Werbaneth, Tegal Corp.
iv
2m3 IEEEISEMI Advanced Manufacturing Conference
TABLE OF CONTENTS
Overview of SEMI and the IEEE
t
Keynote: Challenges and Opportoniticsin Semicondortor Mpnlllpehuing Andreas yon Zil:ewrr:,, Infineon TechnologresAG
Defect Management
Invited Wafer Backside Inspection Applications in Lithography
Kay Lederer, Mathias Scholze, Ulrich Strahbach,Infineon Technologies AF; Andreas Wocka, Thomas M e r , Angela Schwoauer,KLA-Tencor
1
Rodoctivity EnhancementUsing B Methodical Approach to Defect Redortion Based on Synergy of Process and Defect Metrology Knowledge
Robert Schreutekap, Marc van der Reijden, Tim Km& Kristina Mat, Uan Eaglard,Jaap Zondag, Applied Morerids Europe; Frsnk R-el,
SteffenHarzenener, H m y Schoel, Applied Moierrols; Jan Cavelaam, Maria Swamen, Liang Shi, Philip3 Semiconduelors MOS4YOlt
Harrmut Sahr, Marliese Genvig, Markus Junker, Roland Poschadel, Bemhard Hein, Philips Semiconduclors
9
lnnuence of Defect Captore Rate on DcLct-Yirlb-Correl.ti0ns and Generally Defect Control Strategies
Thomas Tochtmp, Philips Semzconduclors GmbH
Invrstigatioa ofRetideDefect FOimPtio~at D W Lithography
KaUrmve Bhattacharna, William Vak,KLA-Tencor Coqmofion;Brian Grmon, Grdnon Comulting Inc.; Dmiu B m w , Javier Ayala,
IBM Microelectronics Corp.
29
36
Laser Shock Cleaning ofInorganic Micra and Nanoseale Particles
A. A. Bum-,
NSF Cenrerfor Microcontomrmnon Conrrol, Northearlem Unrversi()’;J. G.Park, H a n y a g Unrversip;1. M Lee,S. Y . Yaq
41
Larer Enginewig Group, IMTCo. Lrd.
Process Control
Invited: Alignment and Overlay Metrology Using II Spectroscopic Difhrtian Method (abshact)
Weidong Ymg, Roger Lowe-Webb, John Heatan Nonamerrrcs;&ea hrsa,“its van der S c h , ASML
47
46
Doal Damascene Trench Depth Control By iRM“k A Novel Interferometric Endpoint System
Pado Mangiagalli, Applied Mnreriols France; C. Frum L. Sabnmi, ZSG, Applied Mate”als, Inc.; T. ChevoUeau, N. Posseme, LTM-CNRS:
MAssou, LETI-CEA
Precision and Accuracy of CD-SEM ProQe Reconshoction for the 110 Technology Node
T.Marschner,Infinem Technologies; C-Stief,Applied Morerrols
53
Popilgram Impe&etions And Their EiTeert On Lithography
Stephen P. Renwick and Steven D. Slo&er, Nib” Precisron, Ine
59
Prona Canbol and Base Line Monitoring Using Optic~l‘On The Fly’ and SEM CIassiIiceation as Implemented in Advanced
DRAMManoIsctaring
Ralf Schuetten, Slna Preusche, Infheon Technologres GmbH: Wori Stoler, Bemhard MueUer, Applied Malerials Inc.
67
Real Time Evalo~tionof 80 Air LIak Into Dry Etching Eqnipment by Means of OES: Evaluation and Resnlts in Eigb Volume
Prodortion Regime (abstract)
Francesco Ciovacco, Shone Alba, Giureppe FaZio, Fabio Somboli, STMicroelecrronics
73
Keynote: Semicondortor ManufaeNring Oodwk Any Way Bot Down Bob Johnson, Gormer Dalaquesl
t
Industrial Engineering
Invited: Setting Performance Targets in B 3 0 0 m Wafer Fabrication Fsriliq
Ninnal Gavind, Penmyivonio Sfole Universily; Dovrd Fnmoncbr,iak, IBM Microelecmnics
Next Generation Production on 300 mm t o m Pilot to Volume (sbshact)
Klaus Egger, Inlineon Technolo@es
A Dynamic System Regolation Measure for Inercasing EUertive Capacity: the X-Factor Theory
D.Delp, J. Si, Y. Hwang. B. Pei, Arizona Sime Unrversit)
Synrhronoos Discrete Event Simulation for Fast and Efficient Simulation 01s Complete Semiconductor Factory
Holger Vogt. Fraunhofer I ~ I T I U
of IMrcroelectronic
~
Circuris and Symms
t
Not available at b e
printing.
IEEE/SEMI Advlnccd SemiconductorManuficNrhg Conference &Workshop 2003
Munich, Germany
2003 IEEVSEMI Advanced Manufacturing Conference
Optimiz~tianof Aotomated Material Handling System Reggarding Robustness snd Delivery Time
DeUev Glum,AMD Sarony LLC & Co. KG
96
A Sehrdnling and Resaorce Optimising MES for the Semieondoetor and MEMS IndosJilrgen Sieberg, Ricco Walter, ABAKUSSofWorre GmbH
101
Cycle Time Redmrtion at a Major Teras InSPOmenb Wafer Fab
Kishore Pnti and Mark %taker, T a m Imfrumentr Inc.
106
Simulation-Based Evaloation of the R a m p u p Behavior of Wsferfabs
Roland Sf"; J o h m Doma: K e d Reddig; Joachim Seidelmann,Fraunhofeer Imtitule Momfactwing Engineerig and Automolkm (IPA)
111
Advanced Process Technology
hvited The lofloenre afProccssing Conditions on D m Rctcntion Behavior in P Deep Sobmicron NVM Process
M Kamett. S . Q i q R Salis, X.Tao, A. Black, S . Boonsanguan,and A. Liu Phrlips Semiconductors
118
Extending the H D P C M Teehoology to the 90nm Node and Beyond With an In-Sih Etch Assisted P E A ) HDP-CM Prwrss
ling Radecker, Infineon Technologies Inc.; Heiko Weba, Applied Materids Inc.
125
Effect a f P E C M Sic and SiCN Cap Laytr Deposition on Mesoparaos Silica Ultra Low k Didcrtrir Films (abstract)
S.E. Schulz, K.Schulze, T.Gesmer, Chemnitz Unrversily:J. Matuxhe, U. Schmidt,Appl8edMoter;als Inc.
131
Elertriral Roperties of MOCVD ElQ Dielectric Layers with PolysiliconGate Electrodes for CMOS Applications
L. Date, D. Pique, L. van-Auwe, ApplredMnteriols; S . Van Ellshochl, M C a m , IMEC Z.M.Riue",
D. Massaubre, Y.Ponmnarev,
133
F. Roore-
Philips Research
An Ultra Thin Nitrided Oxide Gate Dielectric Formstion by Using Slat Plane Antenna P l a s m
Shigenori O d i , Seiji Mamy-.
MaSasaki,Toshio N&mishr, 'Takuya Sugawara To& Electron Ltd.
137
Resist Shipping Process Dcvdopment for Porous Low-k Dielectric Materials
Han Xq UL VAC Technologies, Inc.: Thieu Jacobs, Brian Wte and P. Josh Wolf, Intemotlonol SEMATECH;
142
Cobalt Silicide Redeposition During Batch Spray Strip Prwess Resolling in Open Contacts
Adel El-Sayed, Sean Coliins, David Frystlk,Lee L a e m e i n , Kdby Center, T a m Imhrments
148
Characterisation ofSiliron Orynitrides and High-K Didectrir Materials by Angle-Resolved X-Ray Photoelectron Spectroscopy
P. Mack, R White, J. Walstenholme, A. Wright, Thenno W Scimiqic
154
Poster Session
Airborne Molecular Contamination: On-line Aoalylied System for Real Time Confpminstion Control
Francesca IlluZZi, Patrizia Sonego, STMmoelechonics; Carolina Solcia, Cristian Landoni, Marc0 Succi, SAES Getters S.p.A.;
Tad Bacon, Kwt Webber, Molecuror Analyrrcs Inc.
160
Cost ofYidd
Daniel N. Ma+uard, David S.Ken, Cynthia Whiteside, IBMMicrmleeironics Eivrsron
165
171
175
188
191
202
zoo8
215
225
2003 IEEWSEMI Advanced Manufacturing Conference
h u g e Field Upgrade to Improve Tool Prodoetivity
Michael J. Dah", Infineon Technologies VdlochAG; Gar& 0.Kenyon, Ultratech Siepper, UK, Ltd.
U1
Impact of Additional LDD Rapid Thermal h e a l i n g an Submicron n-MOSFETs
Wenshens Qiq
Long Vincent KW,W q Y w a , Li Yisuo, Pmdey She& Mmi, Sarkar Mmju, Francis Benistmt, Sanfard Shao Fu Chu,
Chartered Semiconducfor Monufonuring Lld
234
Implementing Fidocial Probe Card Alignment Technology for Prodoction Wafer Probing
Dominique Langlois, Michel Fardel. Allis Semiconducrorlnc;. Fenglei D q Karl R. HeElecWoglm, Inc
U8
Introduction of M a r e d Spcetroseopir Ellipsomdryin a Semicondortor Prodortion Environment
P. Weidnn, U. Man-, P.Y. Guinet, R Wienhold M. m e , Infineon Technologies AG; Jew-Louis Stehlb, Pierre Boher, Marc Bucehia.
sopm SA
244
An Ovrn4ew of Thermal Management or Next Generation Microele&onic Devices
S.S.Tonapi, R.Fflio& F.J. Schmenmans H.S. Cole, J.D. E v m , GE Global Research; B.G. S d a , S W B m g h h m t o n
254
Reliability Considerations far Gar Delivery Components
255
John Savadkouhi, ~
k 7 0 l i SCorporotron
Keynote: Areeleraling Semiconductor from R&D to Manofactwing
Joel Monnier, STMicroelemmics
t
Yield Management
Invitd: Yield Enhancement Challenges for 9Onm and Beyond
Honey Goel, T a m Instruments Inc.; Daren Dance, Wright Williams & Kelb
262
Rapid Redortion of GatcLevel Eleehiral DefeeMty using Voltage Contrast Test Smprtnres
Oliver D. Pane-,
Bnm D. Crevasse,Keiko K.Hams, Benu B. Patel, George W. Cockan, Agere Systems
266
lntcgrated Web-Based Archinetare for Correlative Engineering Data Analysis and Decision Sopport
Navin Tandon, Dana Cleverdos Bill Himhaw, Texos Inrrruments
273
A Semicondoctor Valid Device Dwelopment and Prodortion Control Mcthodolqy
Steven Leibiger, Foirchild Semiconducror Corporation
280
Reducing the Overkillus and Retests in Wafer Testing Process
S.C. Homg. S.Y. Lin, M. H Cheng. Dept. ofElec. & ConW. Eng., Narronal Chiao Tang Universiy: F. Y. Yang,
Taiwan Semiconductor Monlrfoeturing Co.: C . H. Liu W. Y.Lee C. H T s i . Indunid TeehnoloD Research Insrirute
NPN Yield lmprwemrnt with h n e Surface Treatment Prior to Emitter Poly Deposition
T.Tm-Qnrm.N.Bel1, R Cook.M.S.Fm&J.W.Andrews,
D.Hilscher, D.Smyd,V. Sahma,RKetchesqP. Kellawoq S . Cdvelli,
286
292
Philips Semrconductor
Equipment Productivity
Invited A0 Efiertivc Methodology for Improving Eqnipment Reliability and Reducing Errursiana D
scon h~inid
e B Factory Ramp
297
A Pragmatic Approach to Managing AFT FDC in High Vdomc Logic Prodoctian (abstract)
Rebecca J o y c e - W a h m , infineon Technologier
303
New Lithography Excimcr Light Source Technology for ArF (193 nm) Semiconductor Manofarmring
~ a n r e lcolon
~ . m, Cymer. hc.
304
Continuoosly Optimizingthe Valoe of an Installed Base of Semicondoctar Mnnufaetoriag Eqoipmrnt
Gus van der Felt& Fmcie Lamerr, Hans Pnem, R d d Melief, ASMZ
310
Advanced Analysis of Dymmic Neural Control Advisories far Process Optimization and Parts Maintenance
J. P. Card, W. T. chan,A. Cao, W.Marun, IBEXProcers Technolon,, Inc., J. M m g q STMzcroelecWanics
315
Efficient Lot Batching System for Farnaee Operation
Mer Ibmhim Mohd AziV Chik, Wan Sh-ir
Nizam, Nyioh Li Fem, Nor FarAidah Za'bah, Silrerra /MI Sdn Bhd
322
BIOGRAPHIES OF SPEAKERS
325
t
Not wailable
CI
rime prindng.
IEEEISEMI Advanced Semiconductor Manufacturing Conference &Workshop 2003
Muoich, Germany
2003 IEEWSEMI Advanced Manufacturing Conference