Advanced Semiconductor Manufacturing Conference and Workshop . World Class Manulacluring 2003 IEEE/SEMIB Advanced Semiconductor Manufacturing Conference And Workshop ‘Advancing the Science of Semiconductor ManufacturingExcellence” ASMC 2003 PROCEEDINGS The IEEE/SEMI Advanced SemiconductorManufacturing Conference and Workshop is an annual forum that provides a venue for the presentation of methodologies, approaches and techniques required to achieve world-class semiconductor manufacturing. A key role this conference plays is in promodng interaction among semiconductor professionals at al! levels. The goal and objective of the conference are to assist in making the participating companies more knowledgeable of semiconductor production methods, encourage open communication between participants, and develop the strategic relationship between users and suppliers needed to achieve manufacturing excellence and improve global competitiveness. 31 March - 1 April, 2003 Munich, Germany 2003 IEEUSEMI Advanced Manufacturing Conference 2003 PROCEEDINGS IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE AND WORKSHOP (ASMC) PERMISSION TO REPRINT OR COPY Copyright and Reprint Permission: Abstracdng is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law for private use of patrons those articles in t h i s volume that carry a code at the bottom of the hrst page, provided the per-copy fee indicated in the code is paid through the Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 09123 USA. For other copying, reprint or re-publication permission, write to IEEE Copyrights Manager, IEEE Operations Center, 445 Hoes Lane, Piscataway, NJ 08855 USA; or SEMI, 3081 Zanker Road, San Jose, CA 95134 USA. All rights reserved. Copyright 02003 by the Institute of Electrical & Electronics E n p e e r s , Inc. PRINTED AND BOUND IN THE UNITED STATES OF AMERICA Additional copies of these Proceedings m a y be purchased from: IEEE Service Center 445 Hoes Lane Piscataway, NJ 08855-0060 USA Phone: 1.732.981.0060 In the US 1-800-678-IEEE SEMI 3081 Zanker Road San Jose, CA 95135 USA Phone: 1.408.943.6900 httu:il\\u~.seini.org httu :i/mww.ieee.ore Refer to the IEEE Catalog Number, printed below: IEEE Catalog Number: 03CH37406 ISBN Number: 0-7803-7673-0 ISSN: .1078-8743 Layout, composition and compilation by Semiconductor Equipment and Materials Intemational (SEMI? U 2003 IEEWSEMI Advanced Manufacturing Conference ABOUT THE ASMC SPONSORS &semi- Representing more than 2,500 member companies, Semiconductor Equipment and Materials Jnternational (SEMI) is the trade association serving the global semiconductor equipment, materials and ilat panel display industries. Since its inception in 1970. SEMI has played an increasingly vital role in industry expansion, visibility. and representation. SEMI strives to foster growth and development of both member corporations and the professionals within them through business and technical education; workforce development; standards development; public policy initiatives; and international trade shows. Through these efforts, SEMI continues IO promote and nurmre its members and their $100 billion global markets, which represents a significant contribution to the world economy. SEMI is headquanered in San Jose, California, USA with offices in Austin, Beijing, Boston, Brussels, Hsinchu, Moscow, Seoul, Singapore, Tokyo and Washington, D.C. For more about SEMI, visit w . s e m i . o r g . The Electron Devices Society (EDS) and the Components, Packaging. & Manufacturing Technology (CPMT) Society are two of the 37 technical societies within the Institute of Electrical and Electronics Engineers, which, in turn,is the largest professional engineering organization in the world with over 350,000 members. It is transnational, with conferences and chapters in most counmes. EDS and CPMT also sponsor a number of other related conferences: IEEE Networking the World" . .. VLSI Chip Packaging Workshop Semiconductor Thermal and Temperature Management (SEMI-THERM) Symposium International Electron Devices Meeting (IEDM) Jnternational Symposium on Semiconductor Manufacnuing (ISSM) Intersociety Conference on Thermal Phenomena in Electronic Systems (I-THERM) Electronic Components & Technology Conference (ECrC) lntemational Electronic Manufacturing Technology (IEMT) Symposium Copies of past proceedings of some of these conferences are available for purchase. In addition, EDS and CPMTS publish the Transactions on Semiconductor Manufacturing, the archival joumal in this field. We invite you to consider membership for one of the IEEE Societies and to participate with us in funhering advancements in these fields. If you already belong to another professional society, you can affiliate with EDS or CPMT at reduced fees. Please refer to the back cover for additional information. MICRO MICRO magazine is the ultimate focused editorial and advertising vehicle for professionals concemed with defect reduction, process control. and yield enhancement s t r a t e ~ e sin the semiconductor, semiconductor equipment and materials, and related advanced microelectronics manufacturing indusmes. The magazine and its web site - www.micromagadne.com - offer a comprehensive, practical, and timely mix of technical articles and industry and product technology news coverage to a global audience. Since 1983. MICRO has been a leader in providing reliable. in-depth information to its readers in the semiconductor manufacturing community. MICRO magazine -- proud cosponsor of ASMC 2001 and member of SEML iii 2003 IEEWSEMI Advanced Manufacturing Conference 2003 ASMC ORGANIZING COMMITTEE Our special appreciation to the following people who together volunteered countless hours to the organization of the 2003 IEEUSEMI Advanced Semiconductor Manufacturing Conference and Worhhop: General Chair: Mart Graef, Philips Semiconductors Conference Chair: Charlie Pappis, Applied Materials, Inc. Technical Co-chairs: Giorgio de Santi, STMicrwlectronics; Otto Graf, Mineon Technologies AG Duane Boning, MIT - Dept. of EEBrCS Mark Bums, KLA-Tencor Tom Carbone, Fairchild Semiconductor Tom Cheyney, MICRO Magazine Philip Clark, FSI Intemational John Conway, Intel Corp. Craig Core, Analog Devices Chris Demetrius, CWD Sales Johann Domer, IPA Fraunhofer Institute Jod Estabil, KLA-Tencor corporation Pascal Etman, Eiudhoven University of Technology Ahmad Fathulla, Infineon Technologies Villach Patricia Gabella, Advanced Micro Devices John Goodman, Entegris, Inc. David Gross, Advanced Micro Devices Christpher Hess, PDF Solutions, Inc. Karl Hirschmann, RIT Microelectronic Engineering Dan Iversen, Texas Instruments Gary Johnson, IBM Microelectronics Thomas Kaufmann, Communicant Semiconductor Technologies AG Greg Klusewitz, Fairchild Semiconductor Patrice Koch, Lam Research Corp. Fred Lakhani, International SEMATECH Timothy Lash, National SemiconductorCorporation Fourmun Lee, ASM America, Inc. Michael Linder, Caning Inc. Christopher Long, IBM Microelectronics Scott McClure, IBM Microelectronics Winfried Meier, Nikon Precision Europe GmbH Hanno Melzner, Infineon Technologies AG William Miller, IBM Microelectronics Kevin Nason, Fairchild semiconductor Oliver Patterson, Agere Systems Robert Pearson, Virginia Commonwealth University Thomas Piliszczuk, KLA-Tencor France Jeff Roulx, DuPont Photomasks Koos Rooda, Eindhoven University of Technology Walter Schoenleber, Applied Materials Europe Wanda Tomlinson, IBM Microelectronics Willam Tyler, FSI International Jacek Tyminski, Nikon Precision Inc. Peter Van der Meulen, Brooks-PRl Automation Frans van Lierop, ASM Lithography Robert Virgalla, Ultratech Stepper Paul Werbaneth, Tegal Corp. iv 2m3 IEEEISEMI Advanced Manufacturing Conference TABLE OF CONTENTS Overview of SEMI and the IEEE t Keynote: Challenges and Opportoniticsin Semicondortor Mpnlllpehuing Andreas yon Zil:ewrr:,, Infineon TechnologresAG Defect Management Invited Wafer Backside Inspection Applications in Lithography Kay Lederer, Mathias Scholze, Ulrich Strahbach,Infineon Technologies AF; Andreas Wocka, Thomas M e r , Angela Schwoauer,KLA-Tencor 1 Rodoctivity EnhancementUsing B Methodical Approach to Defect Redortion Based on Synergy of Process and Defect Metrology Knowledge Robert Schreutekap, Marc van der Reijden, Tim Km& Kristina Mat, Uan Eaglard,Jaap Zondag, Applied Morerids Europe; Frsnk R-el, SteffenHarzenener, H m y Schoel, Applied Moierrols; Jan Cavelaam, Maria Swamen, Liang Shi, Philip3 Semiconduelors MOS4YOlt Harrmut Sahr, Marliese Genvig, Markus Junker, Roland Poschadel, Bemhard Hein, Philips Semiconduclors 9 lnnuence of Defect Captore Rate on DcLct-Yirlb-Correl.ti0ns and Generally Defect Control Strategies Thomas Tochtmp, Philips Semzconduclors GmbH Invrstigatioa ofRetideDefect FOimPtio~at D W Lithography KaUrmve Bhattacharna, William Vak,KLA-Tencor Coqmofion;Brian Grmon, Grdnon Comulting Inc.; Dmiu B m w , Javier Ayala, IBM Microelectronics Corp. 29 36 Laser Shock Cleaning ofInorganic Micra and Nanoseale Particles A. A. Bum-, NSF Cenrerfor Microcontomrmnon Conrrol, Northearlem Unrversi()’;J. G.Park, H a n y a g Unrversip;1. M Lee,S. Y . Yaq 41 Larer Enginewig Group, IMTCo. Lrd. Process Control Invited: Alignment and Overlay Metrology Using II Spectroscopic Difhrtian Method (abshact) Weidong Ymg, Roger Lowe-Webb, John Heatan Nonamerrrcs;&ea hrsa,“its van der S c h , ASML 47 46 Doal Damascene Trench Depth Control By iRM“k A Novel Interferometric Endpoint System Pado Mangiagalli, Applied Mnreriols France; C. Frum L. Sabnmi, ZSG, Applied Mate”als, Inc.; T. ChevoUeau, N. Posseme, LTM-CNRS: MAssou, LETI-CEA Precision and Accuracy of CD-SEM ProQe Reconshoction for the 110 Technology Node T.Marschner,Infinem Technologies; C-Stief,Applied Morerrols 53 Popilgram Impe&etions And Their EiTeert On Lithography Stephen P. Renwick and Steven D. Slo&er, Nib” Precisron, Ine 59 Prona Canbol and Base Line Monitoring Using Optic~l‘On The Fly’ and SEM CIassiIiceation as Implemented in Advanced DRAMManoIsctaring Ralf Schuetten, Slna Preusche, Infheon Technologres GmbH: Wori Stoler, Bemhard MueUer, Applied Malerials Inc. 67 Real Time Evalo~tionof 80 Air LIak Into Dry Etching Eqnipment by Means of OES: Evaluation and Resnlts in Eigb Volume Prodortion Regime (abstract) Francesco Ciovacco, Shone Alba, Giureppe FaZio, Fabio Somboli, STMicroelecrronics 73 Keynote: Semicondortor ManufaeNring Oodwk Any Way Bot Down Bob Johnson, Gormer Dalaquesl t Industrial Engineering Invited: Setting Performance Targets in B 3 0 0 m Wafer Fabrication Fsriliq Ninnal Gavind, Penmyivonio Sfole Universily; Dovrd Fnmoncbr,iak, IBM Microelecmnics Next Generation Production on 300 mm t o m Pilot to Volume (sbshact) Klaus Egger, Inlineon Technolo@es A Dynamic System Regolation Measure for Inercasing EUertive Capacity: the X-Factor Theory D.Delp, J. Si, Y. Hwang. B. Pei, Arizona Sime Unrversit) Synrhronoos Discrete Event Simulation for Fast and Efficient Simulation 01s Complete Semiconductor Factory Holger Vogt. Fraunhofer I ~ I T I U of IMrcroelectronic ~ Circuris and Symms t Not available at b e printing. IEEE/SEMI Advlnccd SemiconductorManuficNrhg Conference &Workshop 2003 Munich, Germany 2003 IEEVSEMI Advanced Manufacturing Conference Optimiz~tianof Aotomated Material Handling System Reggarding Robustness snd Delivery Time DeUev Glum,AMD Sarony LLC & Co. KG 96 A Sehrdnling and Resaorce Optimising MES for the Semieondoetor and MEMS IndosJilrgen Sieberg, Ricco Walter, ABAKUSSofWorre GmbH 101 Cycle Time Redmrtion at a Major Teras InSPOmenb Wafer Fab Kishore Pnti and Mark %taker, T a m Imfrumentr Inc. 106 Simulation-Based Evaloation of the R a m p u p Behavior of Wsferfabs Roland Sf"; J o h m Doma: K e d Reddig; Joachim Seidelmann,Fraunhofeer Imtitule Momfactwing Engineerig and Automolkm (IPA) 111 Advanced Process Technology hvited The lofloenre afProccssing Conditions on D m Rctcntion Behavior in P Deep Sobmicron NVM Process M Kamett. S . Q i q R Salis, X.Tao, A. Black, S . Boonsanguan,and A. Liu Phrlips Semiconductors 118 Extending the H D P C M Teehoology to the 90nm Node and Beyond With an In-Sih Etch Assisted P E A ) HDP-CM Prwrss ling Radecker, Infineon Technologies Inc.; Heiko Weba, Applied Materids Inc. 125 Effect a f P E C M Sic and SiCN Cap Laytr Deposition on Mesoparaos Silica Ultra Low k Didcrtrir Films (abstract) S.E. Schulz, K.Schulze, T.Gesmer, Chemnitz Unrversily:J. Matuxhe, U. Schmidt,Appl8edMoter;als Inc. 131 Elertriral Roperties of MOCVD ElQ Dielectric Layers with PolysiliconGate Electrodes for CMOS Applications L. Date, D. Pique, L. van-Auwe, ApplredMnteriols; S . Van Ellshochl, M C a m , IMEC Z.M.Riue", D. Massaubre, Y.Ponmnarev, 133 F. Roore- Philips Research An Ultra Thin Nitrided Oxide Gate Dielectric Formstion by Using Slat Plane Antenna P l a s m Shigenori O d i , Seiji Mamy-. MaSasaki,Toshio N&mishr, 'Takuya Sugawara To& Electron Ltd. 137 Resist Shipping Process Dcvdopment for Porous Low-k Dielectric Materials Han Xq UL VAC Technologies, Inc.: Thieu Jacobs, Brian Wte and P. Josh Wolf, Intemotlonol SEMATECH; 142 Cobalt Silicide Redeposition During Batch Spray Strip Prwess Resolling in Open Contacts Adel El-Sayed, Sean Coliins, David Frystlk,Lee L a e m e i n , Kdby Center, T a m Imhrments 148 Characterisation ofSiliron Orynitrides and High-K Didectrir Materials by Angle-Resolved X-Ray Photoelectron Spectroscopy P. Mack, R White, J. Walstenholme, A. Wright, Thenno W Scimiqic 154 Poster Session Airborne Molecular Contamination: On-line Aoalylied System for Real Time Confpminstion Control Francesca IlluZZi, Patrizia Sonego, STMmoelechonics; Carolina Solcia, Cristian Landoni, Marc0 Succi, SAES Getters S.p.A.; Tad Bacon, Kwt Webber, Molecuror Analyrrcs Inc. 160 Cost ofYidd Daniel N. Ma+uard, David S.Ken, Cynthia Whiteside, IBMMicrmleeironics Eivrsron 165 171 175 188 191 202 zoo8 215 225 2003 IEEWSEMI Advanced Manufacturing Conference h u g e Field Upgrade to Improve Tool Prodoetivity Michael J. Dah", Infineon Technologies VdlochAG; Gar& 0.Kenyon, Ultratech Siepper, UK, Ltd. U1 Impact of Additional LDD Rapid Thermal h e a l i n g an Submicron n-MOSFETs Wenshens Qiq Long Vincent KW,W q Y w a , Li Yisuo, Pmdey She& Mmi, Sarkar Mmju, Francis Benistmt, Sanfard Shao Fu Chu, Chartered Semiconducfor Monufonuring Lld 234 Implementing Fidocial Probe Card Alignment Technology for Prodoction Wafer Probing Dominique Langlois, Michel Fardel. Allis Semiconducrorlnc;. Fenglei D q Karl R. HeElecWoglm, Inc U8 Introduction of M a r e d Spcetroseopir Ellipsomdryin a Semicondortor Prodortion Environment P. Weidnn, U. Man-, P.Y. Guinet, R Wienhold M. m e , Infineon Technologies AG; Jew-Louis Stehlb, Pierre Boher, Marc Bucehia. sopm SA 244 An Ovrn4ew of Thermal Management or Next Generation Microele&onic Devices S.S.Tonapi, R.Fflio& F.J. Schmenmans H.S. Cole, J.D. E v m , GE Global Research; B.G. S d a , S W B m g h h m t o n 254 Reliability Considerations far Gar Delivery Components 255 John Savadkouhi, ~ k 7 0 l i SCorporotron Keynote: Areeleraling Semiconductor from R&D to Manofactwing Joel Monnier, STMicroelemmics t Yield Management Invitd: Yield Enhancement Challenges for 9Onm and Beyond Honey Goel, T a m Instruments Inc.; Daren Dance, Wright Williams & Kelb 262 Rapid Redortion of GatcLevel Eleehiral DefeeMty using Voltage Contrast Test Smprtnres Oliver D. Pane-, Bnm D. Crevasse,Keiko K.Hams, Benu B. Patel, George W. Cockan, Agere Systems 266 lntcgrated Web-Based Archinetare for Correlative Engineering Data Analysis and Decision Sopport Navin Tandon, Dana Cleverdos Bill Himhaw, Texos Inrrruments 273 A Semicondoctor Valid Device Dwelopment and Prodortion Control Mcthodolqy Steven Leibiger, Foirchild Semiconducror Corporation 280 Reducing the Overkillus and Retests in Wafer Testing Process S.C. Homg. S.Y. Lin, M. H Cheng. Dept. ofElec. & ConW. Eng., Narronal Chiao Tang Universiy: F. Y. Yang, Taiwan Semiconductor Monlrfoeturing Co.: C . H. Liu W. Y.Lee C. H T s i . Indunid TeehnoloD Research Insrirute NPN Yield lmprwemrnt with h n e Surface Treatment Prior to Emitter Poly Deposition T.Tm-Qnrm.N.Bel1, R Cook.M.S.Fm&J.W.Andrews, D.Hilscher, D.Smyd,V. Sahma,RKetchesqP. Kellawoq S . Cdvelli, 286 292 Philips Semrconductor Equipment Productivity Invited A0 Efiertivc Methodology for Improving Eqnipment Reliability and Reducing Errursiana D scon h~inid e B Factory Ramp 297 A Pragmatic Approach to Managing AFT FDC in High Vdomc Logic Prodoctian (abstract) Rebecca J o y c e - W a h m , infineon Technologier 303 New Lithography Excimcr Light Source Technology for ArF (193 nm) Semiconductor Manofarmring ~ a n r e lcolon ~ . m, Cymer. hc. 304 Continuoosly Optimizingthe Valoe of an Installed Base of Semicondoctar Mnnufaetoriag Eqoipmrnt Gus van der Felt& Fmcie Lamerr, Hans Pnem, R d d Melief, ASMZ 310 Advanced Analysis of Dymmic Neural Control Advisories far Process Optimization and Parts Maintenance J. P. Card, W. T. chan,A. Cao, W.Marun, IBEXProcers Technolon,, Inc., J. M m g q STMzcroelecWanics 315 Efficient Lot Batching System for Farnaee Operation Mer Ibmhim Mohd AziV Chik, Wan Sh-ir Nizam, Nyioh Li Fem, Nor FarAidah Za'bah, Silrerra /MI Sdn Bhd 322 BIOGRAPHIES OF SPEAKERS 325 t Not wailable CI rime prindng. IEEEISEMI Advanced Semiconductor Manufacturing Conference &Workshop 2003 Muoich, Germany 2003 IEEWSEMI Advanced Manufacturing Conference