NOT RECOMMENDED
DMN3112SSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
57mΩ @ VGS = 10V
6.0A
112mΩ @ VGS = 4.5V
3.8A
30V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
•
Low On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
ideal for high-efficiency power-management applications.
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Backlighting
•
Power Management Functions
•
Moisture Sensitivity: Level 1 per J-STD-020D
DC-DC Converters
•
Terminals Connections: See Diagram
•
•
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074g (Approximate)
S
D
S
D
S
D
G
D
D
SOP-8L
S
Equivalent circuit
Top View
Internal Schematic
TOP VIEW
G
Ordering Information (Note 4)
Part Number
DMN3112SSS-13
Notes:
Case
SOP-8L
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N3112SS
N3112SS
YY WW
YY WW
1
4
Chengdu A/T Site
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
1
= Manufacturer’s Marking
N3112SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
4
Shanghai A/T Site
1 of 5
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DMN3112SSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Symbol
VDSS
VGSS
Units
V
V
IDM
Value
30
±20
6
4.5
24
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
TA = +25°C
TA = +70°C
Steady
State
ID
Pulsed Drain Current (Note 6)
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
800
±80
±800
V
nA
2.2
57
112
⎯
1.2
S
V
⎯
⎯
⎯
pF
pF
pF
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
Static Drain-Source On-Resistance
RDS(ON)
⎯
gfs
VSD
⎯
0.5
⎯
43
83
2.8
0.8
Ciss
Coss
Crss
⎯
⎯
⎯
268
73
50
Forward Transconductance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
nA
V
mΩ
Test Condition
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 3.7A
VDS = 10V, ID = 3.7A
VGS = 0V, IS = 2.1A
VDS = 15V, VGS = 0V
f = 1.0MHz
5. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W.
6. Pulse width ≤10μS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
10
10
VGS = 10V
8
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8
VGS = 4.0V
6
4
VGS = 3.5V
2
6
4
TA = 150°C
2
TA = 125°C
VGS = 3.0V
0
TA = -55°C
VGS = 2.5V
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
TA = 85°C
TA = 25°C
0
5
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
5
Fig. 2 Typical Transfer Characteristic
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMN3112SSS
VGS = 4.5V
0.1
VGS = 10V
0.01
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 5A
1.0
0.8
0.6
-50
0.24
T A = 150°C
0.20
TA = 125°C
T A = 85°C
0.16
0.12
TA = 25°C
0.08
TA = -55°C
0.04
0
0
10
0.12
VGS = 4.5V
ID = 5A
0.10
0.08
0.06
VGS = 10V
ID = 10A
0.04
0.02
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
2.4
10
ID = 1mA
2.0
TA = 25°C
8
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
4
6
8
ID, DRAIN CURRENT (A)
0.14
Fig. 5 On-Resistance Variation with Temperature
1.6
2
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
VGS = 10V
ID = 10A
1.2
VGS = 4.5V
0.28
20
1.6
1.4
0.32
ID = 250µA
1.2
0.8
0.4
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
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6
4
2
0
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
January 2015
© Diodes Incorporated
DMN3112SSS
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss
Crss
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 168°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = Single Pulse
0.001
0.00001
0.0001
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
7°~9°
45°
Detail ‘A’
b
e
SOP-8L
Dim
Min
Max
A
1.75
A1
0.08
0.25
A2
1.40
1.50
A3
0.20 Typ
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.80
3.90
e
1.27 Typ
h
0.35
L
0.60
0.80
0°
8°
θ
All Dimensions in mm
D
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
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DMN3112SSS
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
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