DMN3112SSS Product Summary Description and Applications

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NOT RECOMMENDED
DMN3112SSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
Features and Benefits
ID max
TA = +25°C
RDS(ON) max
57mΩ @ VGS = 10V
6.0A
112mΩ @ VGS = 4.5V
3.8A
30V
Description and Applications
This MOSFET is designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
•
Low On-Resistance
•
Low Gate Threshold Voltage
•
Low Input Capacitance
•
Fast Switching Speed
•
Low Input/Output Leakage
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
•
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
•
•
ideal for high-efficiency power-management applications.
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
•
Backlighting
•
Power Management Functions
•
Moisture Sensitivity: Level 1 per J-STD-020D
DC-DC Converters
•
Terminals Connections: See Diagram
•
•
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074g (Approximate)
S
D
S
D
S
D
G
D
D
SOP-8L
S
Equivalent circuit
Top View
Internal Schematic
TOP VIEW
G
Ordering Information (Note 4)
Part Number
DMN3112SSS-13
Notes:
Case
SOP-8L
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
8
5
N3112SS
N3112SS
YY WW
YY WW
1
4
Chengdu A/T Site
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
1
= Manufacturer’s Marking
N3112SS = Product Type Marking Code
YYWW = Date Code Marking
YY or YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
YY = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YY = Date Code Marking for CAT (Chengdu Assembly/ Test site)
4
Shanghai A/T Site
1 of 5
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DMN3112SSS
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 5)
Symbol
VDSS
VGSS
Units
V
V
IDM
Value
30
±20
6
4.5
24
Symbol
PD
RθJA
TJ, TSTG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
TA = +25°C
TA = +70°C
Steady
State
ID
Pulsed Drain Current (Note 6)
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
800
±80
±800
V
nA
2.2
57
112
⎯
1.2
S
V
⎯
⎯
⎯
pF
pF
pF
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(th)
1
Static Drain-Source On-Resistance
RDS(ON)
⎯
gfs
VSD
⎯
0.5
⎯
43
83
2.8
0.8
Ciss
Coss
Crss
⎯
⎯
⎯
268
73
50
Forward Transconductance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Notes:
nA
V
mΩ
Test Condition
VGS = 0V, ID = 250μA
VDS = 30V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = VGS, ID = 250μA
VGS = 10V, ID = 5.8A
VGS = 4.5V, ID = 3.7A
VDS = 10V, ID = 3.7A
VGS = 0V, IS = 2.1A
VDS = 15V, VGS = 0V
f = 1.0MHz
5. Device mounted on 2 oz copper pad layout with RθJA = 50°C/W.
6. Pulse width ≤10μS, Duty Cycle ≤1%.
7. Short duration pulse test used to minimize self-heating effect.
10
10
VGS = 10V
8
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
8
VGS = 4.0V
6
4
VGS = 3.5V
2
6
4
TA = 150°C
2
TA = 125°C
VGS = 3.0V
0
TA = -55°C
VGS = 2.5V
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
TA = 85°C
TA = 25°C
0
5
1
2
3
4
VGS, GATE-SOURCE VOLTAGE (V)
5
Fig. 2 Typical Transfer Characteristic
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMN3112SSS
VGS = 4.5V
0.1
VGS = 10V
0.01
0
4
8
12
16
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
VGS = 4.5V
ID = 5A
1.0
0.8
0.6
-50
0.24
T A = 150°C
0.20
TA = 125°C
T A = 85°C
0.16
0.12
TA = 25°C
0.08
TA = -55°C
0.04
0
0
10
0.12
VGS = 4.5V
ID = 5A
0.10
0.08
0.06
VGS = 10V
ID = 10A
0.04
0.02
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
2.4
10
ID = 1mA
2.0
TA = 25°C
8
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE (V)
4
6
8
ID, DRAIN CURRENT (A)
0.14
Fig. 5 On-Resistance Variation with Temperature
1.6
2
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
VGS = 10V
ID = 10A
1.2
VGS = 4.5V
0.28
20
1.6
1.4
0.32
ID = 250µA
1.2
0.8
0.4
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
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6
4
2
0
0
0.2
0.4
0.6
0.8
1
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
1.2
January 2015
© Diodes Incorporated
DMN3112SSS
C, CAPACITANCE (pF)
1,000
Ciss
100
Coss
Crss
10
0
5
10
15
20
25
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance
30
1
r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
RθJA(t) = r(t) * RθJA
RθJA = 168°C/W
D = 0.02
0.01
D = 0.01
P(pk)
D = Single Pulse
0.001
0.00001
0.0001
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1/t2
D = 0.005
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (s)
Fig. 10 Transient Thermal Response
10
100
1,000
Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
A2 A A3
7°~9°
45°
Detail ‘A’
b
e
SOP-8L
Dim
Min
Max
A
1.75
A1
0.08
0.25
A2
1.40
1.50
A3
0.20 Typ
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.80
3.90
e
1.27 Typ
h
0.35
L
0.60
0.80
0°
8°
θ
All Dimensions in mm
D
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
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DMN3112SSS
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
Dimensions
X
Y
C1
C2
C1
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
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(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN3112SSS
Document number: DS31582 Rev. 3 - 3
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