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Authors requiring further information regarding Elsevier’s archiving and manuscript policies are encouraged to visit: http://www.elsevier.com/copyright Author's personal copy ARTICLE IN PRESS Nuclear Instruments and Methods in Physics Research A 602 (2009) 391–395 Contents lists available at ScienceDirect Nuclear Instruments and Methods in Physics Research A journal homepage: www.elsevier.com/locate/nima Active control of the gain of a 3 mm 3 mm Silicon PhotoMultiplier P.S. Marrocchesi a,, M.G. Bagliesi a, K. Batkov a, G. Bigongiari a, M.Y. Kim b, T. Lomtadze b, P. Maestro a, F. Morsani b, R. Zei a a b Department of Physics, University of Siena and INFN, V. Roma 56, 53100 Siena, Italy INFN sez. di Pisa, Largo B. Pontecorvo 3, 56127 Pisa, Italy a r t i c l e in fo abstract Article history: Received 15 December 2008 Accepted 29 December 2008 Available online 10 January 2009 Solid-state photodetectors working in the Geiger mode—known as Silicon PhotoMultipliers (SiPM) or MultiPixel Photon Counters (MPPC)—are currently being developed with increasingly large active areas. Potential applications for low-light-level detection were investigated with a 9 mm2 MPPC, recently made available by Hamamatsu. The device was optically coupled with a scintillator and its performances, in terms of single photoelectron discrimination, were studied in a series of measurements under different operating conditions. An active control of the gain was implemented by a linear feedback on the operating voltage. The results of the tests are discussed. & 2009 Elsevier B.V. All rights reserved. The Silicon PhotoMultiplier (SiPM) [1,2] is a novel solid-state photon counting device. It consists of a matrix of Avalanche PhotoDiodes operating in the Geiger regime with resistive quenching and connected in parallel into a single readout element. Along with a number of appealing features (insensitivity to magnetic fields, low-voltage bias, ruggedness, small material budget), this device suffers from a high dark-count rate and a dependence of the gain on the main operating conditions (bias voltage and temperature). Nevertheless, its excellent singlephoton detection capabilities [3,4] makes the SiPM a natural candidate to replace conventional photomultipliers (PMTs) in many applications including high energy physics and nuclear physics instrumentation as well as in other disciplines. In this paper, we describe the measurements carried out in our laboratory with a Hamamatsu [5] MultiPixel Photon Counter MPPC-S10362-33-050C. This new photosensor has a 3 mm 3 mm active area covered by 3600 square pixels of 50 mm side. It provides approximately a 9 times larger detection area with respect to the 1 mm2 SiPM devices that we have used in our previous measurements [6]. with a wavelength shifted emission peak in the blue. As the sensitive surface of the SiPM is protected by a transparent film, an optical grease was used to ensure a good coupling between the SiPM window and a 6 mm diameter cylindrical scintillator (T2) of 30 mm length. One side of the scintillator was optically connected to the SiPM, while the opposite end was coupled to the photocathode of a conventional PMT via a 3 mm diameter clear optical fiber. The signal from the photosensor was matched via a 50 O impedance to a 3 stage Gali-5 wideband monolithic amplifier. The output signal was digitized by a CAEN V792 12-bit ADC with a gate width of 120 ns and a gain of 104 fC per ADC count. The readout of the module was carried out by a VME controller interfaced to a PC via an optical-fiber link. Front-end Board Ru-106 Source 1mm pin-hole T1: Thin Scintillator + PMT-1 Clear optical fiber (φ = 3mm) 2. Test setup The spectral sensitivity of the device (Fig. 1) allows for a direct optical coupling with plastic scintillators and Cherenkov radiators PMT-2 T2: Scintillator (φ = 6mm; Length = 30mm) Corresponding author. Tel.: +39 0502214363; fax: +39 0502214317. E-mail address: marrocchesi@pi.infn.it (P.S. Marrocchesi). 0168-9002/$ - see front matter & 2009 Elsevier B.V. All rights reserved. doi:10.1016/j.nima.2008.12.199 Si-PM 3mm x 3mm Fig. 1. Laboratory tests with a radioactive source: experimental layout. Fan 1. Introduction Copper for thermal contact Peltier Cooling plate Keywords: Photodetector Silicon PhotoMultiplier MPPC Gain control Author's personal copy ARTICLE IN PRESS 392 P.S. Marrocchesi et al. / Nuclear Instruments and Methods in Physics Research A 602 (2009) 391–395 The scintillator was illuminated, from a direction orthogonal to the cylinder axis, either with UV light from an LED or with a radioactive b-source. In this way, we could monitor the intensity of the scintillating light, using the PMT as a reference, and measure the relative response and efficiency of the SiPM. The experimental layout is shown in Fig. 1. A thin (1.5 mm thick) scintillator T1, readout by a conventional PMT, was placed between the source collimator and the scintillator under test. The coincidence between the T1 signal and the signal of the reference PMT connected to T2 was used as a trigger for the measurements performed with the electron source. The latter was a 106 Ru b-emitter with an energy spectrum endpoint at approximately 3.5 MeV. Both the SiPM and the Gali-5 amplifier were in good thermal contact with a copper cold mass connected to a Peltier cooler. The temperature was constantly monitored using a thermistor. During all tests, the bias voltage and the SiPM dark current were constantly monitored using a Keithley 487 picoammeter. Temperature and current were readout via a GPIB interface and then recorded and displayed using LabView. The SiPM digitized data were readout and displayed by custom data acquisition and monitoring programs, running under Linux and using the CERN ROOT package (Fig. 2). Fig. 3. Measured I2V curves as a function of the temperature T. 3. Static measurements The MPPC-S10362-33-050C was first characterized by measuring the I2V curve. The measurements were carried out for different values of the temperature T. During each measurement the temperature was monitored and kept stable using the Peltier cooler. The family of curves, shown in Fig. 3, refer to a temperature range between 8.1 and 20.4 1C. 4. Measurements with a scintillator In a first series of measurements with the radioactive source, we were able to observe photopeaks in the pulse height distribution of the SiPM signals (Fig. 2) as a result of the detection, by individual cells of the photodetector, of the light generated by the incident electrons in the cylindrical scintillator. Data were collected with the source trigger for different values of the bias voltage Vbias , while the temperature was kept at a constant value. The pedestal distribution was measured with random triggers and its mean value was subtracted from the data. 4.1. Measurement of the gain Using the data collected with the scintillator, the distance of the first photopeak from the pedestal and the relative distances among the first three consecutive photopeaks were fitted to Gaussians. By averaging these values, the gain G of the SiPM was determined and plotted as a function of the reverse bias voltage V bias in Fig. 4, where each curve refers to a given value of the temperature. By linear extrapolation of each curve of Fig. 4 to zero gain, the reverse bias breakdown voltage Vbd was determined and plotted in Fig. 5 as a function of the temperature T. The linear increase of V bd with the temperature was fitted as V bd ðTÞ ¼ a0 T þ V 0 with a slope a0 ¼ 50:2 0:1 mV= C and a constant term V 0 ¼ 66:07 0:02 V. For a given value of the reverse bias, the gain decreases approximately by a factor of 2 for an increase of 10 C. The actual dependence was fitted from the data of Fig. 4 to the expression: GðTÞ ¼ G0 ðV bias V bd ðTÞ), where G0 ¼ 4:57 105 is the photodetector gain corresponding to an overvoltage DV ¼ V bias V bd of 1 V. 4.2. Measurement of the dark count rate Fig. 2. Photopeaks observed with the scintillator: (a) at 10 1C and (b) at 3 1C. Lower panel: pedestal and first two photopeaks at 3 1C. Data taken with a random trigger showed a pedestal width s0 20 ADU. This translates into an rms noise of 8 fC, for an Author's personal copy ARTICLE IN PRESS P.S. Marrocchesi et al. / Nuclear Instruments and Methods in Physics Research A 602 (2009) 391–395 393 amplifier gain close to 250. At a typical SiPM gain of G ¼ 4:0 105 , it corresponds to about 0.12 photoelectrons (pe). For each run, taken at fixed temperature, the values of a lower threshold (0.5 pe) and of an upper threshold (1.5 pe), were Fig. 7. Cross-talk probability among adjacent SiPM cells as a function of the temperature for different values of the gain. Fig. 4. SiPM gain vs. bias voltage for different temperature values. determined. The measured dark count rates, corresponding to either threshold setting, are shown in Fig. 6 as a function of the temperature, each curve referring to a fixed value of the gain ranging from 2.5 to 4:0 105 . The dark count rate increases at larger gain and approximately doubles for a temperature increase of one decade around room temperature. A typical (lower threshold) dark count rate of about 2 MHz was found at 23 1C and G ¼ 4:0 105 . 4.3. Cross-talk probability The dark count rates corresponding to the 1.5 pe threshold are about one order of magnitude lower than the rates measured with the lower threshold. Their ratio gives an estimate of the cross-talk probability in adjacent photocells of the photosensor. The plot shown in Fig. 7 shows an increase of the cross-talk at larger gains and higher temperatures. A typical value between 15% and 20% was found at 23 1C and G ¼ 4:0 105 . Fig. 5. Reverse bias breakdown voltage Vbd as a function of the temperature. 5. Operational stability The temperature dependence of the gain is quite large and can have a negative impact on pulse height measurements and seriously impair the photon counting capability of the photodetector, as shown in Fig. 8. In this example, the temperature of the device was allowed to vary in time, within 5 C, following a sine wave with a 8 h period. This was achieved by remotely controlling the Peltier cooling system. The result, shown for three different values of the temperature, is that adjacent photopeaks broaden and merge together with a sizeable loss of information. For stable operations, the gain should be kept constant and this can be done either by stabilizing the temperature or by feedback control on the reverse bias voltage. 6. Active control of the gain Fig. 6. Dark count rates vs. temperature for different values of the gain. The upper (lower) set of curves refer to a threshold of 0.5 (1.5) photoelectrons. As an alternative to cool the SiPM and maintain it at a very stable temperature, we implemented an active control of the gain by varying the SiPM bias as a function of the temperature. We could remotely control the bias voltage of the SiPM using a Keithley power source connected to a PC via a GPIB interface, Author's personal copy ARTICLE IN PRESS 394 P.S. Marrocchesi et al. / Nuclear Instruments and Methods in Physics Research A 602 (2009) 391–395 while at the same time monitoring the current. The temperature sensor was in thermal contact with the SiPM. We implemented a feedback loop where the measured values of the temperature were used as input to calculate the appropriate value of the bias voltage for a given gain, as shown in Fig. 9. The active control loop was embedded into a LabView virtual instrument. Almost two complete temperature cycles were performed during a long stability test run (more than 15 h) with a maximum temperature span of about 9 1C. The measured ADC values of the pedestal and the first two photopeaks are shown, as a function of time, in Fig. 10. The effect of the active gain control can be seen by noting that the distance between the curves (i.e.: the gain) is approximately constant. The amount of stability achieved with the active control is shown in Fig. 11, where the measured gain is plotted as a function of time during the stability test run. Despite the large variation of the temperature, the average gain was kept stable within 1% at 140 120 100 80 60 40 20 0 5 G = 4.15 x 10 T = 13.5 °C 0 200 400 600 800 220 200 180 160 140 120 100 80 60 40 20 0 G = 3.18 x 105 450 T = 19.0 °C 400 350 300 250 200 150 100 50 0 0 200 400 600 800 5 G = 2.18 x 10 T = 23.0 °C 0 200 400 600 800 700 Fig. 10. Active control of the gain. Upper panel: ADC values for pedestal, first and second photopeaks as a function of time. Lower panel: temperature vs. time. 600 ADC 500 400 300 200 100 0 0 100 200 300 Time (Minutes) 400 Fig. 8. Effect of gain variation during a 5 C sinusoidal temperature cycle with a period of 8 h. The upper histograms are pulse height distributions taken at three different times. Fig. 11. Active control of the gain: measured gain as a function of time during two temperature cycles with a maximum temperature span of about 9 1C. the value G ¼ 3:6 105 . The gain variation during the long run, plotted as a function of the temperature in Fig. 12, is consistent with a stability of DG=G within 1%. 7. Temperature dependence of the current at fixed gain Fig. 9. Bias voltage vs. temperature for given values of the gain. The temperature dependence of the current was measured, in a series of short runs, as shown in Fig. 13, where each curve is relative to a given gain. The curves show a non-linear dependence on the temperature that is directly related to the increase of the dark count rate (Fig. 6). During the stability test run, when the gain was kept fixed at a value G ¼ 3:6 105 via the active control, the measured temperature dependence of the photodetector current (Fig. 14) Author's personal copy ARTICLE IN PRESS P.S. Marrocchesi et al. / Nuclear Instruments and Methods in Physics Research A 602 (2009) 391–395 395 showed a non-linear behavior, consistent with the curves of Fig. 13. 8. Conclusions We tested the performance of the Hamamatsu MPPC-S1036233-050C photosensor, coupled with a thin plastic scintillator, under different conditions of gain and temperature. The photon counting capability of the device, its dark count rate and operational stability were measured. The problem of the temperature dependence of the gain—a key point for stable operations—was addressed by implementing an active control loop via a temperature dependent (linear) feedback on the bias voltage. Once kept at a stable gain, the device was found to provide reproducible measurements over extended periods of time. Acknowledgment Fig. 12. Active control of the gain: measured fractional gain variation as a function of the temperature during the stability test run (more than 15 h). This work is part of the R&D program SPIDER funded by the Istituto Nazionale di Fisica Nucleare (INFN). References [1] [2] [3] [4] [5] [6] Fig. 13. Measured current as a function of the temperature for different values of the gain. Fig. 14. Active gain control: measured current as a function of the temperature when the gain was stabilized at the value G ¼ 3:6 105 . V. Saveliev, V. Golovin, et al., Nucl. Instr. and Meth. A 442 (2000) 223. P. Buzhan, B. Dolgoshein, et al., Nucl. Instr. and Meth. A 504 (2003) 48. V. Golovin, et al., Nucl. Instr. and Meth. A 518 (2004) 560. N. Dinu, et al., Nucl. Instr. and Meth. A 572 (2007) 422. K. Yamamoto, et al., in: IEEE Nuclear Science Symposium, S. Diego, CA, 2006. P.S. Marrocchesi et al., in: Proceedings of the 30th Cosmic Ray Conference, Merida, 2007.