International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
Switched Boost Inverter for Standalone DC Nanogrid Applications
S.Venkatesh,Dr. S. Vathsal , Dr. S. Siva Prasad
1. M.Tech student 2. Professor&Dean 3. Professor&HOD
J.B. Institute of Engineering and Technology(UGC Autonomous), Hyderabad , India
Email id: venky.scient@gmail.com
Abstract—Switched boost inverter (SBI) is a singlestage power converter derived from Inverse Watkins
Johnson topology. Unlike the traditional buck-type
voltage source inverter (VSI), the SBI can produce an
ac output voltage that is either greater or less than the
available dc input voltage. Also, the SBI exhibits
better electromagnetic interference noise immunity
when compared to the VSI, which enables compact
design of the power converter. Another advantage of
SBI is that it can supply both dc and ac loads
simultaneously from a single dc input. These features
make the SBI suitable for dc nanogrid applications.
In this paper, the SBI is proposed as a power
electronic interface in dc nanogrid. The structure and
advantages of the proposed SBI-based nanogrid are
discussed in detail. This paper also presents a dq
synchronous-reference-frame-based controller for
SBI, which regulates both dc and ac bus voltages of
the nanogrid to their respective reference values
under steady state as well as under dynamic load
variation in the nanogrid.
[1]–[3]. The aver-age load demand in the nanogrid is
generally met by the local renewable energy sources
like solar, wind, etc. An energy stor-age unit is also
required in the nanogrid to ensure uninterruptible
power supply to the critical loads and to maintain
power balance in the nanogrid.
Fig. 1 shows the schematic of a dc nanogrid
consisting of a and local ac loads. The solar panel is
associated with a series-blocking diode DS to avoid
reverse power conduction. As the dynamic behaviors
of all the different units of nanogrid are not uniform,
they are interfaced to a common dc bus usingpower
electronic converters, solar panel as an energysource,
a storage unit, and some dc and local ac loads. The
solar panel is associated with a series-blocking diode
DS to avoid reverse power conduction as shown in
Fig. 1. As per the consumer preference, each dc load
in the nanogrid also has its own power electronic
interface [1]–[3] which is not shown in Fig. 1 for
simplicity.
In the nanogrid structure of Fig. 1, three different
power con-verter stages are used to interface the
renewable energy source, energy storage unit, and the
local ac loads in the system to the dc bus. This paper
proposes a structure of the dc nanogrid us-ing
switched boost inverter (SBI) [4]–[6] as a power
electronic interface. Fig. 2 shows the structure of the
proposed SBI-based dc nanogrid, and Fig. 3 shows
the circuit diagram of the SBI supplying both dc and
ac loads.
Fig. 1. Schematic of a dc nanogrid.
I. INTRODUCTION
DC NANOGRID is a low-power dc distribution
system suit-able for residential power applications
www.ijrcct.org
As shown in Fig. 3, the SBI has one active switch
(S), two diodes (Da , Db ), one inductor (L), and one
capacitor (C) con-nected between voltage source Vg
and the inverter bridge. A low-pass LC filter is used
at the output of the inverter bridge to filter the
Page 1178
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
switching frequency components in the inverter
output voltage vA B . As shown in Fig. 3, the
capacitor C (connected between node VD C and
ground) of SBI acts as a dc bus for dc loads while the
capacitor Cf (connected between nodes AO and BO )
of SBI acts as an ac bus for ac loads. The operating
principle and pulsewidth modulation (PWM) control
of the SBI have been explained in Section III of this
paper.
2)
The output ac voltage of SBI can be either
higher or lower than the available source voltage. So,
it has wide range of obtainable output voltage for a
given source voltage.
3)
SBI
exhibits
better
electromagnetic
interference (EMI) noise immunity when compared
to a traditional voltage source inverter (VSI), as the
shoot-through (both switches in one leg of the
inverter bridge are turned ON simulta-neously) due to
EMI noise will not damage the inverter switches [4].
This reduces extra burden on the power con-verter
protection circuit and helps in realization of com-pact
design of the power converter.
4)
As the SBI allows shoot-through in the
inverter legs, it does not require a dead-time circuit
and hence eliminates the need for complex dead-time
compensation technologies [9], [10].
Fig. 2.
Structure of the proposed SBI-based dc
nanogrid.
Fig. 2 shows structure of the proposed SBI-based dc
nanogrid which has the following advantages when
compared to the con-ventional structure [1]–[3]:
1)
SBI is a single-stage power converter that
can supply both dc (between node VD C and ground)
and ac loads (between nodes AO and BO )
simultaneously from a single dc input. So, it can
realize both the dc-to-dc converter for solar panel and
the dc-to-ac converter in a single stage. This
decreases size and cost of overall system.
Fig. 3. Circuit diagram of SBI supplying both dc
and ac loads.
www.ijrcct.org
This paper presents a structure of the SBI-based dc
nanogrid and its advantages compared to the
conventional structure shown in Fig. 1. This paper
also describes the steady-state and small-signal
analysis of SBI supplying both dc and ac loads along
with its PWM control technique. Also, a closed-loop
control strategy of SBI that regulates both the dc and
ac bus voltages of SBI to their respective reference
values has been given in this paper. The closed-loop
control strategy has also been experimentally
validated using a 0.5-kW laboratory prototype of SBI
shown in Fig. 3.
The organization of this paper is as follows. Section
II presents a review of the SBI and its comparison
with the traditional two-stage conversion system.
Section III describes the steady-state operation of the
SBI supplying both dc and ac loads, followed
by its PWM control strategy. The small-signal
analysis of SBI and design of a closed-loop control
system using synchronous reference frame (SRF)
approach has been given in Section IV. In Section V,
the control strategy has been experimentally validated using a 0.5-kW laboratory prototype of SBI
controlled using TMS320F28335 DSP. Section VI
presents some conclud-ing remarks of this paper.
Page 1179
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
D)•TS intervals of a switching cycle TS are shown in
Fig. 4(b) and (c), respectively. As shown in Fig. 4(b),
during D•TS interval, the two switches of the
converter are in position 1, and inductor L is
connected between the input and the output.
Similarly, during (1 – D)•TS interval, the switches
are in position 0 and the inductor is con-nected
between the output and the ground, as shown in Fig.
4(c).
Fig. 4. (a) Schematic of IWJ topology. (b) Equivalent
circuit of IWJ topology in D•TS interval. (c)
Equivalent circuit of IWJ topology in (1 – D)•TS
interval.
Note that in this paper, GS , GS 1 , GS 2 , GS 3 , and
GS 4 repre-sent the gate control signals of switches
S, S1 , S2 , S3 , and S4 , respectively, fed through a
noninverting gate driver. Lowercase letters are used
to represent the sinusoidal signals and uppercase
letters are used to represent the dc signals. Uppercase
letter with a hat (ˆ) represents peak value of a signal,
while lowercase let-ter with a hat (ˆ) represents
small-signal variation in the signal.
Also x is the phasor representation of a sinusoidal
signal x. The x superscript “∗” is used to represent
the reference signals to the control system of dc
nanogrid.
II. SWITCHED BOOST INVERTER TOPOLOGY
SBI is a single-stage power converter derived from
Inverse Watkins Johnson (IWJ) Topology [4]. This
topology exhibits properties similar to that of a Zsource inverter (ZSI) [7] with lower number of
passive components and more active compo-nents.
This section presents a review of the approach used
to derive the SBI from IWJ topology. A detailed
comparison of SBI with a traditional two-stage dc-toac conversion system is also given in this section.
A. Derivation of SBI From IWJ Topology
The schematic of IWJ converter [26] is shown in Fig.
4(a) and its equivalent circuits in D•TS and (1 –
www.ijrcct.org
Fig. 5.
(a) Realization of CIWJ topology using
power semiconductor devices. (b) Connection of a
VSI across the dc output node VD C of CIWJ
topology.
(c) Connection of a VSI across the switching terminal
Vi of the CIWJ topology (switch Si can be realized
by using the shoot-through state of the VSI).
Interchanging the D•TS (position 1), and (1 – D)•TS
(position 0) intervals of IWJ converter leads to Fig.
4(d). This configuration is named as the
complementary IWJ (CIWJ) topology in [4]. Note
that this interchange has no impact on the states of
the converter. However, as far as implementation is
concerned, this will imply that the controlled switch
and diode of CIWJ and IWJ are interchanged.
Fig. 5(a) shows the realization of CIWJ topology
using power semiconductor devices [4], [5]. The
output of this converter is a dc voltage VD C . In
order to convert this dc voltage to an ac voltage, one
has to use a VSI. This VSI may be directly connected
at the output node VD C of CIWJ topology [shown in
Fig. 5(b)], which becomes a cascaded connection of a
dc–dc converter and a regular VSI. But this
combination cannot overcome the general limitations
Page 1180
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
of a traditional VSI [7], [8], viz., 1) dead-time is
necessary to prevent the damage of the switches in
the event of shoot-through in inverter phase legs, 2)
complex dead-time compensation technologies
should be used to compensate the waveform
distortion caused by dead-time.
Fig. 5(c) shows another possible connection of the
VSI, in which the inverter bridge is connected across
the switch node Vi of the CIWJ topology. Note that
this combination requires only controlled switch S
apart from the inverter bridge. The switch Si of CIWJ
topology can be realized by utilizing the shootthrough state of the inverter bridge. Also, similar to
the cascaded connection shown in Fig. 5(b), this
circuit can also supply a dc load (at the output of
CIWJ) and an ac load (at the output of the inverter
bridge) simultaneously from a single dc voltage
source Vg . The circuit of Fig. 5(c) is named as SBI
topology in [4]. Note that it is not a direct cascade
connection of CIWJ topology and VSI, as the inverter
bridge is connected at a switch node of CIWJ
converter but not at its output terminal. When
compared to the cascaded connection shown in Fig.
5(b), the SBI has following advantages:
1)
In the event of shoot-through in any phase
leg of the in-verter bridge, the diode Db is reversebiased and capaci-tor C is disconnected from the
inverter bridge. Now, the current through the circuit
is limited by the inductor L. So, similar to ZSI, shootthrough does not damage the switches of the SBI
also.
2)
As the SBI allows shoot-through, no deadtime is needed to protect the converter. Also this
circuit exhibits better EMI noise immunity compared
to a traditional VSI.
This is because the impedance network of ZSI uses
two inductors, two capacitors, and a diode apart from
the inverter bridge, while the SBI requires only one
inductor, one capacitor, a controlled switch, and two
diodes. The reduction in number of passive
components leads to the reduced size of the power
converter stage. Also ZSI requires passive
components with high consistency [7], [8] which is
not the case with SBI. Another major advantage of
SBI when compared to ZSI is that it can supply both
dc and ac loads simultaneously from a single dc
voltage source, as shown in Fig. 3. However, the
limitation of SBI is that its peak inverter input
voltage is only (1 – D) times that of ZSI, where D is
the shoot-through duty ratio of the inverter bridge. A
more detailed quantitative comparison of SBI and
ZSI is given in [4].
B. Comparison of SBI With a Traditional Two-Stage
DC-to-AC Conversion System
In the previous section, it is shown that the SBI is a
single-input, two-output (one dc output and one ac
output) power con-verter derived from IWJ converter
and a VSI. Similar to the tra-ditional two-stage dc-toac conversion system shown in Fig. 6, the SBI can
also generate an ac output voltage that is either
greater or less than the input dc voltage. However,
the SBI has certain advantages and limitations when
compared to the two-stage conversion system shown
in Fig. 6, which are discussed below.
1) Dead-Time Requirement: A shoot-through event
in the inverter bridge of the two-stage conversion
system damages the power converter stage, as well as
the dc loads connected to the dc bus of the nanogrid.
So a dead-time circuit is necessary to minimize the
occurrence of shoot-through events in this system.
3)
Since dead-time is not required, there is no
need of extra dead-time compensation technologies
to compensate the waveform distortion caused by
dead-time.
Note that a ZSI [7] also exhibits similar advantages
of SBI mentioned above. But the SBI achieves these
properties with lower number of passive components
and more active com-ponents compared to ZSI [4].
www.ijrcct.org
Page 1181
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
Fig. 6. Traditional two-stage dc-to-ac conversion
system: Boost converter cascaded with a VSI.
Moreover, to compensate the waveform distortion
caused by dead-time, one has to use the complex
dead-time compensation technologies [8]–[10]. This
is not the case with SBI, as it allows shoot-through in
the inverter phase legs. So the use of SBI elim-inates
the need for a dead-time circuit as well as the
requirement of dead-time compensation technologies.
2)
Reliability and EMI Noise Immunity: Even
with a dead-time circuit, the probability of a shootthrough event cannot be eliminated completely
because an EMI noise can also cause shoot-through
in the inverter phase legs [4], [7]. With the use of
SBI, the shoot-through event does not damage the
switches of the power converter. So, SBI exhibits
better EMI noise immu-nity and hence has better
reliability compared to the two-stage conversion
system.
3)
Extreme Duty Cycle Operation: At the
extreme duty ratio operation (e.g., for D ≥ 0.75) of a
conventional boost converter, the inductor L is
charged over a longer time duration in the
switching cycle, and very small time interval is left to
discharge the inductor through the output diode Db .
So this diode should sustain a short pulsewidth
current with relatively high ampli-tude. Also, this
causes severe diode reverse recovery current and
increases the EMI noise levels in the converter [11]–
[14]. This also imposes a limit on the switching
frequency of the boost converter and thus increases
the size of the passive components used in the twostage conversion system shown in Fig. 6.
In case of SBI, the maximum shoot-through duty
ratio is always limited to 0.5 for a positive dc bus
voltage VD C [4]. So, even when the converter
operates at the point of maximum conversion ratio,
the conduction time of the diodes Da , Db of SBI is
approximately equal to 50% of the switching time
period, which alleviates the problems due to extreme
duty ratio operation of a boost converter. So, SBI can
www.ijrcct.org
operate at relatively higher switching frequencies
compared to the traditional two-stage conversion
system. This also decreases the size of passive
components used in the power converter.
4)
Voltage Stress of Switching Devices: Table
I compares the voltage stress of the semiconductor
devices used in the SBI and the two-stage conversion
system shown in Fig. 6. From this table, it can be
observed that the switch “S” has less voltage
TABLE I, VOLTAGE STRESS COMPARISON OF
SBI AND TWO-STAGE CONVERSION SYSTEM
stress (VD C – Vg ) in case of SBI. For all other
devices, the voltage stress is same for both SBI and
the two-stage conversion system.
5) Maximum Conversion Ratio: The maximum
conversion ratio (VD C /Vg ) of a practical boost
converter cannot exceed 3.0 (approximately), due to
the effects of various nonidealities [26] such as
DCR/ESR of the passive components, on-state
voltage drops of the semiconductor devices, etc. This
value may slightly vary depending on the actual
values of nonideal elements present in the converter.
Similarly, the rms ac output voltage (vAC (rms))
of a single-phase inverter using sinusoidal PWM
cannot exceed _√ 1 2 times the dc link voltage (VD C
) [25], [27] in the linear modulation range (0 < M <
1), for a low distortion sine wave output. So the
maximum overall rms ac-to-dc conversion ratio of
two-stage conversion system shown in Fig. 6 is
approximately 2.12. This value may still decrease if
the effects of nonidealities in VSI are taken into
consideration.
The rms ac-to-dc conversion ratio of the two-stage
conversion ratio may be increased slightly by using
Page 1182
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
semiconductor devices with very low forward voltage
drops and passive components with very low
ESR/DCR. This enhances the overall cost of the
power converter stage. Another way to increase the
conversion ratio of the two-stage conversion system
is to use high step-up dc-to-dc converters [12]–[14]
or the converters with trans-former/coupled inductor
[8], [26]. These converters require ad-ditional
semiconductor devices and passive components
which increase the size as well as cost of the power
converter stage.
In this paper, it is shown experimentally in Section V
that the maximum rms ac-to-dc conversion ratio of
the SBI is 2, which is comparable to that of a twostage conversion system. Also, as explained above,
SBI has no diode reverse recovery problems with
extreme duty ratio operation. So this conversion ratio
is possible even at high switching frequency and with
better reliability and EMI noise immunity.
Note that, in this paper, the SBI has been tested with
only one PWM control technique proposed in [6],
where the maximum value of modulation index (M)
is limited by the shoot-through duty ratio (D).
However, as the operation of SBI is similar to ZSI, it
is possible to extend maximum boost control and
maximum constant boost control techniques of ZSI
[15]–[17] to SBI. This may help SBI to achieve
higher conversion ratios compared to the two-stage
conversion system, without increasing the number of
devices.
6)
Number of Control Variables: Similar to a
two-stage con-version system, the SBI also has two
control variables: Shoot- through duty ratio (D) and
the modulation index (M). The dc bus voltage VD C
is controlled by D, while ac output voltage of the
converter is controlled by M. However, similar to
ZSI [7], the value one of these two control variables
decides the upper limit of the second control variable
of SBI. The mathematical relation between D and M
depends on the control technique used. Note that, as
mentioned above, it is possible to extend most of the
PWM control techniques of ZSI [15]–[17] to control
the SBI also.
www.ijrcct.org
7)
Number of Devices: As shown in Fig. 3, the
SBI requires five active switches, six diodes, two
inductors, and two capacitors for its realization. The
two-stage conversion system shown in Fig. 6 uses
only one diode (Da ) less compared to the SBI.
However, in a dc nanogrid, the input comes from a
renewable en-ergy source, e.g., solar panel or fuel
cell, which should always be associated with a series
diode to block the reverse power flow [7], [18], [19].
So the diode Da of SBI can be a part of the renewable
energy source which eliminates the need for an
external diode. Thus, the number of devices in both
converters is same.
B. PWM Control of SBI
The SBI utilizes the shoot-through interval of the Hbridge to invoke the boost operation. So, the
traditional PWM tech-niques of VSI [25], [27] have
to be modified to incorporate the shoot-through state,
so that they are suitable for SBI. In [6], a PWM
scheme for SBI is developed based on the traditional
sine-triangle PWM with unipolar voltage switching
[25], [27]. This technique has been illustrated in Fig.
8 during positive and negative half cycles of the
sinusoidal modulation signal vm (t) [shown in Fig.
8(a)].
As shown in Fig. 8(b) and (d), during positive half
cycle of vm (t) (vm (t) > 0), the gate control signals
GS 1 and GS 2 are generated by comparing the
sinusoidal modulation signals vm (t), and –vm (t)
[shown in Fig. 8(a)] with a high-frequency triangular
carrier vtri (t) of amplitude Vp . The frequency fS of
the carrier signal is chosen such that fS _ fO .
Therefore, vm (t) is assumed to be nearly constant in
Fig. 8(d). The signals ST1 and ST2 are generated by
comparing vtri (t) with two constant voltages VST
and –VST , respectively. The purpose of these two
signals is to insert the required shoot-through interval
D•TS in the PWM signals of the inverter bridge. Now
the gate control signals for switches S3 , S4 , and S
can be obtained using the logical expressions given
as follows:
Page 1183
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
GS 3 = GS 2 +ST1 ; GS 4 = GS 1 + ST2 ; GS =
ST1 + ST2 .
(10) Similarly, during negative half cycle of vm (t)
(vm (t) < 0), the gate control signals GS 3 and GS 4
are generated by comparing the modulation signals –
vm (t), and vm (t) with the triangular carrier vtri (t).
The shoot-through signals ST1 and ST2 are
generated in the same manner as in the positive half
cycle. The gate control signals for switches S1 , S2 ,
and S can be obtained using the logical expressions
given as
follows: GS 1 = GS 4 +ST1 ; GS 2 = GS 3 + ST2 ;
GS = ST1 + ST2 . (11)
SWITCHED BOOST INVERTER
Fig. 7. Experimental results of SBI with different
values of rms ac-to-dc conversion ratios and input
voltages.
CONCLUSION
This paper presents a novel power electronic
interface called switched boost inverter (SBI) for dc
nanogrid applications. It shown that the SBI is a
single-stage power converter that can supply both dc
and ac loads simultaneously from a single dc input. It
is also proven that the SBI can generate an ac output
voltage that is either higher or lower than the
available source voltage. This paper also describes
the advantages and limitations of SBI when
compared to the ZSI and the traditional two-stage dcto-ac conversion system. The steady-state and smallsignal analysis of the SBI supplying both dc and ac
loads, and a PWM control technique suitable for SBI
are also described in this paper. Also, the analysis
and design of a SRF-based controller that regulates
both the dc and ac bus voltages of SBI to their
respective reference values has been discussed in this
paper. The steady state and dynamic performance as
well as the low cross regulation of the closed-loop
control strategy have been experimentally validated
using a 0.5-kW laboratory prototype of SBI
supplying both dc and ac loads. The performance of
SBI has been tested experimentally with an isolation
transformer and also with three different types of ac
loads: R, RL, and nonlinear loads. It can be
concluded from the experimental results that the
control strategy of SBI shows excellent performance
during steady state as well as during a step change in
either dc or ac load in the system. These results
confirm the suitability of SBI and its closed-loop
control strategy for dc nanogrid applications.
REFERENCES
[1]
D. Boroyevich, I. Cvetkovic, D. Dong, R.
Burgos, F. Wang, and F. C. Lee, “Future electronic
power distribution systems—A contemplative view,”
in Proc. 12th IEEE Int. Conf. Optim. Electr. Electron.
Equip., May 2010, pp.
1369–1380.
Fig. 8. (a) Experimental results of SBI supplying an
RL load. (b) Experi-mental results of SBI supplying a
rectifier load.
www.ijrcct.org
[2]
J. Schonberger, R. Duke, and S. D. Round,
“DC-bus signalling: A dis-tributed control strategy
Page 1184
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
for a hybrid renewable nanogrid,” IEEE Trans. Ind.
Electron., vol. 53, no. 5, pp. 1453–1460, Oct. 2006.
[3]
H. Kakigano, Y. Miura, and T. Ise, “Lowvoltage bipolar-type DC micro-grid for super high
quality distribution,” IEEE Trans. Power Electron.,
vol. 25, no. 12, pp. 3066–3075, Dec. 2010.
[4]
S. Mishra, R. Adda, and A. Joshi, “Inverse
Watkins-Johnson topology based inverter,” IEEE
Trans. Power Electron., vol. 27, no. 3, pp. 1066–
1070, Mar. 2012.
[5]
S. Upadhyay, S. Mishra, and A. Joshi, “A
wide bandwidth electronic load,” IEEE Trans. Ind.
Electron., vol. 59, no. 2, pp. 733–739, Feb. 2012.
[6]
R. Adda, S. Mishra, and A. Joshi, “A PWM
control strategy for switched boost inverter,” in Proc.
3rd IEEE Energy Convers. Congr. Expo., Phoenix,
AZ, 2011, pp. 4208–4211.
[7]
F. Z. Peng, “Z-source inverter,”
Trans. Ind. Appl., vol. 39, no. 2, pp.504–510,
Mar./Apr. 2003.
IEEE
[8]
Y. Zhou and W. Huang, “Single-stage boost
inverter with coupled induc-tor,” IEEE Trans. Power
Electron., vol. 27, no. 4, pp. 1066–1070, Apr. 2012.
[9]
L. Chen and F. Z. Peng, “Dead-time
elimination for voltage source in-verters,” IEEE
Trans. Power Electron., vol. 23, no. 2, pp. 574–580,
Mar. 2008.
[10]
S. H. Hwang and J. M. Kim, “Dead-time
compensation method voltage-fed PWM inverter,”
IEEE Trans. Energy Convers., vol. 25, no. 1, pp. 1–
10, Mar. 2010.
[11]
F. Gao, P. C. Loh, R. Teodorescu, and F.
Blaabjerg, “Diode-assisted buck– boost voltagesource inverters,” IEEE Trans. Power Electron., vol.
24, no. 9, pp. 2057–2064, Sep. 2009.
[12]
A. A. Fardoun and E. H. Ismail, “Ultra stepup DC–DC converter with reduced switch stress,”
IEEE Trans. Ind. Appl., vol. 46, no. 5, pp. 2025–
2034, Sep./Oct. 2010.
www.ijrcct.org
[13]
E. H. Ismail, M. A. Al-Saffar, and A. J.
Sabzali, “High conversion ratio DC–DC converters
with reduced switch stress,” IEEE Trans. Circuits
Syst. I, Reg. Papers, vol. 55, no. 7, pp. 2139–2151,
Aug. 2008.
[14]
Q. Zhao and F. C. Lee, “High-efficiency,
high step-up DC–DC converters,” IEEE Trans.
Power Electron., vol. 18, no. 1, pp. 65–73, Jan. 2003.
[15]
P. C. Loh, D. Vilathgamuva, Y. S. Lai, G.
Chua, and Y. Li, “Pulse-width modulation of Zsource inverters,” IEEE Trans. Power Electron., vol.
20, no. 6, pp. 1346–1355, Nov. 2005.
[16]
F. Z. Peng, M. Shen, and Z. Qian,
“Maximum boost control of the Z-source inverter,”
IEEE Trans. Power Electron., vol. 20, no. 4, pp. 833–
838, Jul. 2005.
[17]
M. Shen, J. Wang, A. Joseph, F. Z. Peng, L.
M. Tolbert, and D. J. Adams, “Constant boost control
of the z-source inverter to minimize current ripple
and voltage stress,” IEEE Trans. Ind. Appl., vol. 42,
no. 3, pp. 770–778, May/Jun. 2006.
[18]
Y. Huang, M. Shen, F. Z. Peng, and J.
Wang, “Z-source inverter for residential photovoltaic
systems,” IEEE Trans. Power Electron., vol. 21, no.
6, pp. 1776–1782, Nov. 2006.
[19]
R. J. Wai, C. Y. Lin, R. Y. Duan, and Y. R.
Chang, “High-efficiency DC-DC converter with high
voltage gain and reduced switch stress,” IEEE Trans.
Ind. Electron., vol. 54, no. 1, pp. 354–364, Feb. 2007.
[20]
U. A. Miranda, M. Aredes, and L. G. B.
Rolim, “A DQ synchronous reference frame current
control for single-phase converters,” in Proc. 36th
IEEE Power Electron. Specialists Conf. (PESC),
Recife, Brazil, Jun. 2005, pp. 1377–1381.
[21]
B. Crowhurst, E. F. El-Saadany, L. El
Chaar, and L. A. Lamont, “Single-phase grid-tie
inverter control using DQ transform for active and
reactive load power compensation,” in Proc. IEEE
Page 1185
International Journal of Research in Computer and ISSN (Online) 2278- 5841
Communication Technology, Vol 3, Issue 10, October - 2014 ISSN (Print) 2320- 5156
Int. Conf. Power Energy, Kuala Lumpur, Malaysia,
Nov./Dec. 2010, pp. 489–494.
Data
Manual
[Online].
Available:
http://www.ti.com/lit/ds/ symlink/tms320f28335.pdf
[22]
P. Rodriguez, R. Teodorescu, I. Candela, A.
Timbus, M. Liserre, and F. Blaabjerg, “New positivesequence voltage detector for grid synchro-nization
of power converters under faulty grid conditions,” in
Proc. 37th IEEE Power Electron. Spec. Conf., Jeju,
Korea, Jun. 2006, pp. 1–7.
[31]
Texas
Instruments
(2009,
Jul.),
TMS320×2833x, 2823x Enhanced Pulse Width
Modulator (ePWM) Module Reference Guide
[Online].
Available:
http://www.ti.com/lit/ug/sprug04a/sprug04a.pdf
[23]
M. Ciobotaru, R. Teodorescu, and F.
Blaabjerg, “A new single-phase PLL structure based
on second order generalized integrator,” in Proc. 37th
IEEE Power Electron. Spec. Conf., Jeju, Korea, Jun.
2006, pp. 1–6.
[24]
J. Liu, J. Hu, and L. Xu, “Dynamic
modeling and analysis of Z source converterderivation of AC small signal model and designoriented anal-ysis,” IEEE Trans. Power Electron.,
vol. 22, no. 5, pp. 1786–1796, Sep. 2007.
[25]
D. G. Holmes and T. A. Lipo, Pulse Width
Modulation for Power Con-verters: Principles and
Practice. Piscataway, NJ: IEEE Press, 2003.
[26]
R. W. Erickson and D. Maksimovic,
Fundamentals of Power Electronics, 2nd ed. Norwell,
MA: Kluwer, Jan. 2001.
[27]
N. Mohan, T. Undeland, and W. Robbins,
Power Electronics: Converters, Applications and
Design, 2nd ed. New York: Wiley, 1995.
[28]
K. Selvajyothi and P. A. Janakiraman,
“Reduction of voltage harmonics in single phase
inverters using composite observers,” IEEE Trans.
Power Del., vol. 25, no. 2, pp. 1045–1057, Apr. 2010.
[29]
Z. Yao and L. Xiao, “Control of singlephase grid-connected inverters with nonlinear loads,”
IEEE Trans. Ind. Electron., 2012, to be published.
doi:10.1109/TIE.2011.2174535.
[30]
Texas
Instruments
(2012,
May),
TMS320F28335 Digital Signal Con-troller (DSC):
www.ijrcct.org
Page 1186