Lecture #29 Small-Signal Modeling and Linear Amplification - Part 2: BJTs Outline/Learning Objectives: • • • • • Describe the BJT as an amplifier. Define and describe the small-signal-model of the BJT. Analyze BJT amplifiers using a two-part process: dc Analysis: (1) construct the dc equivalent circuit; (2) solve for the Q-point. ac Analysis: (3) construct the ac equivalent circuit; (4) replace the BJT by its small-signal model; (5) solve the ac circuit. • Analyze the BJT common-emitter (C-E) amplifier. • Use the electronics laboratory to investigate the electrical behavior of simple circuits and devices. • Transistor as an Amplifier • Small signal parameters of bipolar junction transistor (BJT) • Voltage gain (AV), input resistance (RIN), output resistance (ROUT) • Maximum input and output signal amplitudes Lecture 29 29 - 1 The Bipolar Junction Transistor Amplifier v BE = V BE + v be and 10 = v CE + i C R (Load-Line Equation) C vCE(t) 10 V 6.65V RC t 5V iB 3.35V vBE(t) 8mV 8mV t 0.7V 0.7V + vbe + - VBE 3.3kΩ iC vBC- + + vCE + vBE - -8mV BJT Common-Emitter Amplifier i B = 15µA , i C = 1.5mA since β = 100 Q-point is i B = 15µA ; V BE = 0.7V ; i C = 1.5mA ; V CE = 5V v CE 1.65 ∠180 A V = --------- = ------------------------ = 206 ∠180 = – 206 v BE 0.008 ∠0 Lecture 29 29 - 2 Collector Current (mA) 4 t vBE = 0.717V IBE = 30µA 3 vCE(t) 2 vBE(t) Q-point 1 Lecture 29 0 2 4 6 t vBE = 0.7V IBE = 15µA vBE = 0.692V IBE = 10µA load line 0 vBE = 0.708V IBE = 20µA 8 10 Collector-Emitter Voltage (V) 12 29 - 3 Small-Signal Modeling i 1 = y 11 v 1 + y 12 v 2 ; i 2 = y 21 v 1 + y 22 v 2 i b = y 11 v be + y 12 v ce ; i c = y 21 v be + y 22 v ce v BE = V BE + v be and v CE = V CE + v ce + vbe - i B = I B + i b and i C = I C + i c . v be = ∆v BE = v BE – V BE and v ce = ∆v CE = v CE – V CE . ic + ib vce - i b = ∆I B = i B – I B and i c = ∆I C = i C – I C . ib y 11 = -------v be ic y 21 = -------v be = v ce = 0 = v be = 0 ∂i B ∂ v BE ; Q–P ∂i C ∂ v BE ; Q–P ib y 12 = ------v ce ic y 22 = ------v ce = v ce = 0 = v be = 0 v CE v CE v BE ---------------------; β F = β F0 1 + i C = I S exp 1+ V V V T A A ∂i B ∂ v CE Q–P ∂i C ∂ v CE Q–P IS v BE -------; iB = exp --------- . β F0 VT β F0 is the value of β F extrapolated to v CE = 0 . Lecture 29 29 - 4 Things To Remember Y parameters have equivalent circuit representation The current gain is actually a function of both the BE and BC voltages i1 + v1 y 21 v 1 1 ----- y 11 i2 1 ------- y 22 y 12 v 2 Collector Current (mA) v2 IB = 100 µA 4 IB = 80 µA IB = 60 µA 2 IB = 40 µA IB = 20 µA 0 -15 -VA Lecture 29 + -10 -5 0 5 10 15 Collector-Emitter Voltage (V) 29 - 5 y 12 = ∂i B ∂ v CE = 0 Q–P ∂i C IS V CE IC V BE --------------------exp y 21 = = = ------- = g m 1+ ∂ v BE VT V V VT T A Q–P ∂i C IS IC V BE 1 y 22 = = ------ exp ---------- = ------------------------- = ----VA ∂ v CE V A + V CE ro VT Q–P i C ∂β F i C ∂β F ∂i C 1 ∂i C 1 ∂i C ----------------y 11 = = – = – 2 ∂ v BE β F ∂ v BE β 2 ∂ i C ∂ v BE β F ∂ v BE β ∂ v BE Q–P F F ∂i B ∂i C i C ∂β F IC i C ∂β F IC 1 1 y 11 = ----- 1 – ----- = -------------- 1 – ----- = ------------- = ----- . β F ∂ v BE βF ∂ iC βF VT βF ∂ iC β0 VT rπ Lecture 29 29 - 6 ∂i C Here, β 0 = is the small-signal common-emit∂ iB ter current gain. The Hybrid-pi small-signal model of the BJT is as C B + ib vbe rπ ro - shown. ic + vce gmvbe - E Two-Port Representation For β 0 = 100 , V A = 75V , V T = 25mV and, V CE = 10V , we get IC gm rπ rο µf 1 µA 4x10-5 S 2.5 MΩ 85 MΩ 3400 10 µA 4x10-4 S 250 kΩ 8.5 MΩ 3400 100 µA 0.004 S 25 kΩ 850 kΩ 3400 1 mA 0.04 S 2.5 kΩ 85 kΩ 3400 10 mA 0.4 S 250 Ω 8.5 kΩ 3400 Summary: y 11 = I C ⁄ ( β 0 V T ) = 1 ⁄ r π and y 12 = 0 y 21 = I C ⁄ V T = g m and y 22 = I C ⁄ ( V A + V CE ) = 1 ⁄ r o Lecture 29 29 - 7 Small-Signal Current Gain β0 = gm r π ∂β F ∂ iC ∂β F ∂ iC βF > 0 for i C < I M βo < βF βo > βF < 0 for i C > I M where βF β 0 = -------------------------------------------------- 1 ∂β F 1 – I C ----- βF ∂ iC iC IM Q–P Amplification Factor (p. 600) V A + V CE V A I C V A + V CE ----------------------------⋅ = ------------------------- ≈ ------µf = gm ro = IC VT VT VT This is the maximum voltage gain an individual transistor can provide. Lecture 29 29 - 8 Equivalent Forms of Small-Signal Model v ce v be = i b r π , g m v be = g m r π i b = β o i b and i c = β o i b + ------- ≈ β o i b r o C B + ib vbe rπ gmvbe - C B ic + + ib vce vbe rπ ro - - - E E Voltage-controlled current source (VCCS) model βoib ic + vce ro Current-controlled current source (CCCS) model Definition of Small-Signal for the BJT (p. 602) v BE V BE + v be i C = I S exp --------- = I S exp ------------------------- . VT VT V BE v be v be I C + i c = I S exp ----------- exp ------- = I C exp ------- . VT VT VT Lecture 29 29 - 9 v be 1 v be 2 1 v be 3 Using i C = I C 1 + ------- + --- ------- + --- ------- + .... and i c = i C – I C , we get VT 2 VT 6 VT v be 1 v be 2 1 v be 3 from i c = i C – I C that i c = I C ------- + --- ------- + --- ------- + .... . 6 VT V T 2 V T 2 v be 1 v be -------Now linearity requires that « ------- or v be « 2V T . 2 VT VT Using a factor of 10 to satisfy the inequality, we get, v be ≤ 5mV . v be Now, we can write that i C ≈ I C 1 + ------- = I C + g m v be . V T ic iC – IC g m v be v be 5mV ----- = ---------------- = --------------- = ------- ≤ --------------- = 0.20 . V T 25mV IC IC IC A 5 mV change in vBE corresponds to a 20% deviation in iC from its Q-point as well as a 20% change in iE since iE ~ iC. Lecture 29 29 - 10 Summary of BJT Small-Signal Parameters Parameter BJT Transconductance gm IC ⁄ VT Input Resistance RIN rπ = βo ⁄ gm = βo VT ⁄ IC Output Resistance ROUT ( V A + V CE ) ⁄ I C ≈ V A ⁄ I C Amplification Factor µf g m r o = ( V A + V CE ) ⁄ V T Small-Signal Requirement v be ≤ 5mV Small-Signal Model for the pnp BJT This is identical to that of the npn transistor. Remember that the dc currents in a pnp transistor flow in an opposite direction to that in a npn transistor. Lecture 29 29 - 11