TGA2540-FL
30 to 3000 MHz GaN Power Amplifier
Key Features
•
•
•
•
•
•
•
•
Measured Performance
Frequency Range: 30 to 3000 MHz
Psat: 39.5 dBm, P1dB: 35 dBm
PAE: >40%
Small Signal Gain: 19.5 dB
TOI: 43 dBm
NF: 4 dB
Bias: Vd = 30 V, Idq = 360 mA,
Vg = -3.32 V Typical
Package Dimensions: 25.15 x 14.48 x
4.85 mm
Primary Application
42
100
41
90
40
80
39
70
38
60
37
50
36
40
35
30
34
PAE
20
Psat
33
10
32
•
Military Communication
Product Description
PAE (%)
Psat (dBm)
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
The TGA2540-FL Power Amplifier provides
19.5 dB of small signal gain and greater than
8 W of output power across 30 to 3000 MHz
band. The TGA2540-FL is designed using
TriQuint’s standard 0.25-µm GaN HEMT
production process.
0
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
3
The TGA2540-FL is available in a 4 lead
flange mount package and is ideally suited for
wideband communication transceivers.
Frequency (GHz)
25
Gain, ORL, IRL (dB)
20
15
Evaluation boards are available upon request.
10
5
GAIN
ORL
IRL
Lead-free and RoHS compliant.
0
-5
-10
-15
-20
-25
0
0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 2.7
Frequency (GHz)
3
The information contained on this data sheet
is technical information as defined by 22 CFR
120.10 and is therefore US export controlled.
Export or transfer contrary to US law is
prohibited.
Datasheet subject to change without notice.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
1
Table I
Absolute Maximum Ratings 1/
Symbol
Parameter
Vd-Vg
Value
Drain to Gate Voltage
65 V
Vd
Drain Voltage
40 V
Vg
Gate Voltage Range
Id
Drain Current
Ig
Gate Current Range
Pin
Tchannel
TGA2540-FL
Notes
2/
-30 to 0 V
850 mA
2/
-2.4 to 1.5 mA
Input Continuous Wave Power
28 dBm
Channel Temperature
200 °C
2/
1/
These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and / or affect
device lifetime. These are stress ratings only, and functional operation of the device at these
conditions is not implied.
2/
Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Table II
Recommended Operating Conditions
Symbol
Value
Vd
Drain Voltage
30 V
Id
Drain Current
360 mA
Drain Current under RF Drive
740 mA
Gate Voltage
-3.32 V
Id_Drive
Vg
1/
Parameter 1/
See assembly diagram for bias instructions.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
2
TGA2540-FL
Table III
RF Characterization Table
Bias: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
SYMBOL
PARAMETER
TEST
CONDITIONS
MIN
NOMINAL
MAX
UNITS
Gain
Small Signal Gain
f = 30 - 3000 MHz
-
19.5
-
dB
IRL
Input Return Loss
f = 30 - 3000 MHz
-
12
-
dB
ORL
Output Return Loss
f = 30 - 3000 MHz
-
10
-
dB
Psat
Saturated Output
Power
f = 30 - 3000 MHz
-
39.5
-
dBm
P1dB
Output Power @ 1dB
Compression
f = 30 - 3000 MHz
-
35
-
dBm
TOI
Output TOI
f = 30 - 3000 MHz
-
43
-
dBm
NF
Noise Figure
f = 30 - 3000 MHz
-
4
-
dB
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
3
TGA2540-FL
Table IV
Power Dissipation and Thermal Properties
Parameter
Test Conditions
Value
Maximum Power
Dissipation
Tbaseplate = 70 °C
Pd = 18.8 W
Tchannel = 200 °C
Tm = 1.3E+5 Hrs
Thermal Resistance,
θJC
Vd = 30 V
Id = 360 mA
Pd = 10.8 W
Tbaseplate = 70 °C
θJC = 6.9 °C/W
Tchannel = 145 °C
Tm = 4.1E+6 Hrs
Thermal Resistance,
θJC
Under RF Drive
Vd = 30 V
Id = 740 mA
Pout = 39.5 dBm
Pd = 13.3 W
Tbaseplate = 70 °C
θJC = 6.9 °C/W
Tchannel = 162 °C
Tm = 1.3E+6 Hrs
30 seconds
180 °C
Mounting
Temperature
Storage Temperature
Notes
-65 to 150 °C
Median Lifetime vs Channel Temperature
Median Lifetime (Hours)
1.E+13
1.E+12
1.E+11
1.E+10
1.E+09
1.E+08
1.E+07
1.E+06
1.E+05
1.E+04
FET7
25
50
75
100
125
150
175
200
225
250
Channel Temperature (°C)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
4
TGA2540-FL
Measured Data
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
25
Gain (dB)
20
15
10
5
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
3.0
3.5
4.0
Frequency (GHz)
IRL and ORL (dB)
0
-5
-10
-15
-20
IRL
ORL
-25
0.0
0.5
1.0
1.5
2.0
2.5
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
5
TGA2540-FL
Measured Data
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
1000
Pout @ 1.5 GHz
45
900
Gain @ 1.5 GHz
40
800
Id @ 1.5 GHz
35
700
30
600
25
500
20
400
15
300
10
200
10
12
14
16
18
20
22
24
Id (mA)
Pout (dBm), Gain (dB)
50
26
Pin (dBm)
46
Pin = 26 dBm
44
Pout (dBm)
42
40
38
36
34
32
30
Psat
P1dB
28
26
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
6
TGA2540-FL
Measured Data
42
100
41
90
40
80
39
70
38
60
37
50
36
40
35
30
34
PAE
20
Psat
33
10
32
0
0
0.5
1
1.5
2
PAE (%)
Psat (dBm)
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
2.5
3
3.5
Frequency (GHz)
42
41
Pout (dBm)
40
39
38
37
36
35
-40 °C
34
25 °C
85 °C
33
32
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
7
TGA2540-FL
Measured Data
Bias conditions: Vd = 35 V, Idq = 360 mA, Vg = -3.35 V, Typical
1000
Pout @ 1.5 GHz
45
900
Gain @ 1.5 GHz
40
800
Id @ 1.5 GHz
35
700
30
600
25
500
20
400
15
300
10
200
10
12
14
16
18
20
22
24
Id (mA)
Pout (dBm), Gain (dB)
50
26
Pin (dBm)
46
Pin = 26 dBm
44
Pout (dBm)
42
40
38
36
34
32
30
Psat
P1dB
28
26
0
0.5
1
1.5
2
2.5
3
3.5
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
8
TGA2540-FL
Measured Data
42
100
41
90
40
80
39
70
38
60
37
50
36
40
35
30
34
PAE
Psat
20
33
10
32
0
0
0.5
1
1.5
2
2.5
PAE (%)
Psat (dBm)
Bias conditions: Vd = 35 V, Idq = 360 mA, Vg = -3.35 V, Typical
3
3.5
Frequency (GHz)
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
9
TGA2540-FL
Measured Data
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
55
50
IMD3 (dB)
45
40
35
0.15GHz
30
1.0GHz
25
2.0GHz
20
3.0GHz
15
18
20
22
48
24
26
28
30
Pout/Tone (dBm)
32
34
24
26
28
30
Pout/Tone (dBm)
32
34
36
47
OIP3 (dBm)
46
45
44
43
0.15GHz
42
1.0GHz
41
40
2.0GHz
39
3.0GHz
38
18
20
22
36
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
10
TGA2540-FL
Measured Data
Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical
16
14
NF (dB)
12
10
8
6
4
2
0
0
0.4
0.8
1.2
1.6
2
2.4 2.8
Frequency (GHz)
3.2
3.6
4
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
11
TGA2540-FL
Electrical Schematic
Vd
1.0 uF
0. 1 uF
3
RF In
1
4
RF Out
TGA2540-FL
2
0.1 uF
1.0 uF
Vg
Bias Procedures
Bias-up Procedure
Bias-down Procedure
Set Vg to -6.0 V
Turn off RF supply
Set Vd to +30 V
Reduce Vg to -6.0V. Ensure Id ~ 0 mA
Adjust Vg more positive until Id is 360 mA.
This will be Vg ~ -3.3 V
Turn Vd to 0 V
Apply RF signal to input
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
12
TGA2540-FL
Mechanical Drawing
GaN MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
13
TGA2540-FL
Package Pin out
Pin 1
RF In
Pin 2
Vg
Pin 3
Vd
Pin 4
RF Out
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
14
TGA2540-FL
Recommended Evaluation Board Layout
Board Material: Roger 4350; Thickness: 0.010 in.
Designators
Values
C1
1 uF
C2
0.1 uF
C3
1 uF/ 100 V
C4
0.1 uF/ 100 V
GaN MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
15
TGA2540-FL
Assembly of a TGA2540-FL Package
1.
Clean the board or module with alcohol. Allow it to fully dry.
2.
Nylock screws are recommended for mounting the TGA2540-FL to the board.
3.
To improve the thermal and RF performance, we recommend a heat sink attached
to the bottom of the TGA2540-FL and/or apply Indium alloy shim ( 80In/15Pb/ 5Ag)
to the bottom of TGA2540-FL.
4.
Apply solder to each pin of TGA2540-FL.
5.
Clean the assembly with alcohol.
Ordering Information
Part
ECCN
Package Style
TGA2540-FL
XI(c)
Flange (Package bolted down)
GaN MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
The information contained on this data sheet is technical information as defined by 22 CFR 120.10
and is therefore US export controlled. Export or transfer contrary to US law is prohibited.
TriQuint Semiconductor: www. triquint.com (972)994-8465 Fax (972)994-8504 Info-mmw@tqs.com
October 2009 © RevA
16