BAT 47
BAT 48
SMALL SIGNAL SCHOTTKY DIODES
DESCRIPTION
General purpose, metal to silicon diodes featuring
very low turn-on voltage and fast switching.
These devices have integrated protection against
excessive voltage such as electrostaticdischarges.
DO 35
(Glass)
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Repetitive Peak Reverse Voltage
VRRM
Forward Continuous Current*
Ta = 25 °C
IFRM
Repetitive Peak Fordware Current*
tp ≤ 1s
δ ≤ 0.5
IFSM
Surge non Repetitive Forward Current*
IF
BAT47
BAT48
Unit
20
40
V
350
mA
1
A
tp = 10ms
7.5
A
tp = 1s
1.5
Ta = 25 °C
330
mW
- 65 to + 150
- 65 to + 125
°C
°C
230
°C
Value
Unit
300
°C/W
Ptot
Power Dissipation*
Tstg
Tj
Storage and Junction Temperature Range
TL
Maximum Temperature for Soldering during 10s at 4mm from
Case
THERMAL RESISTANCE
Symbol
Rth(j-l)
Test Conditions
Junction-ambient*
* On infinite heatsink with 4mm lead length
November 1994
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BAT 47/BAT 48
ELECTRICAL CHARACTERISTICS
STATIC CHARACTERISTICS
Symbol
VBR
VF*
Test Conditions
IR = 10µA
BAT47
20
IR = 25µA
BAT48
40
T j = 25°C IF = 0.1mA
All Types
Typ.
Max.
0.25
0.3
T j = 25°C IF = 10mA
0.4
BAT47
0.8
T j = 25°C IF = 300mA
1
BAT48
0.5
T j = 25°C IF = 200mA
0.75
T j = 25°C IF = 500mA
0.9
VR = 1.5V
T j = 25°C
V
0.5
T j = 25°C IF = 150mA
T j = 25°C IF = 50mA
Unit
V
T j = 25°C IF = 1mA
T j = 25°C IF = 30mA
IR*
Min.
All Types
1
µA
10
T j = 60°C
VR = 10V
T j = 25°C
BAT47
4
20
T j = 60°C
VR = 20V
T j = 25°C
10
30
T j = 60°C
VR = 10V
T j = 25°C
BAT48
2
15
T j = 60°C
VR = 20V
T j = 25°C
5
25
T j = 60°C
VR = 40V
T j = 25°C
25
50
T j = 60°C
DYNAMIC CHARACTERISTICS
Symbol
C
Test Conditions
Tj = 25°C VR = 0V
Min.
f = 1MHz
20
Tj = 25°C
* Pulse test: tp ≤ 300µs δ < 2%.
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IF = 10mA
Max.
Unit
pF
12
Tj = 25°C VR = 1V
trr
Typ.
VR = 1V
irr = 1mA
RL = 100Ω
10
ns
BAT 47/BAT 48
Figure 1. Forward current versus forward
voltage at different temperatures (typical
values).
Figure 2. Forward current versus forward
voltage (typical values).
Figure 3. Reverse current versus junction
temperature.
Figure 4. Reverse current versus continuous
reverse voltage (typical values).
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BAT 47/BAT 48
Figure 5. Capacitance C versus reverse
applied voltage VR (typical values).
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BAT 47/BAT 48
PACKAGE MECHANICAL DATA
DO 35 Glass
B
A
note 1 E
B
/C
O
E note 1
O
/D
O
/D
note 2
DIMENSIONS
REF.
Millimeters
Min.
Max.
Inches
Min.
NOTES
Max.
A
3.050 4.500 0.120 0.117
B
12.7
1 - The lead diameter ∅ D is not controlled over zone E
0.500
∅C
2 - The minimum axial lengh within which the device may be
1.530 2.000 0.060 0.079 placed with its leads bent at right angles is 0.59”(15 mm)
∅D
0.458 0.558 0.018 0.022
E
1.27
0.050
Cooling method: by convection and conduction.
Marking: clear, ring at cathode end.
Weight: 0.015g
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
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