PD - 93835
Si4420DY
HEXFET® Power MOSFET
l
l
l
l
l
N-Channel MOSFET
Low On-Resistance
Low Gate Charge
Surface Mount
Logic Level Drive
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
VDSS = 30V
RDS(on) = 0.009Ω
T o p V ie w
Description
This N-channel HEXFET® power MOSFET is produced
using International Rectifier's advanced HEXFET power
MOSFET technology. The low on-resistance and low gate
charge inherent to this technology make this device ideal
for low voltage or battery driven power conversion
applications
The SO-8 package with copper leadframe offers enhanced
thermal characteristics that allow power dissipation of
greater that 800mW in typical board mount applications.
SO-8
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
EAS
VGS
TJ, TSTG
Drain- Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation ƒ
Power Dissipation ƒ
Linear Derating Factor
Single Pulse Avalanche Energy„
Gate-to-Source Voltage
Junction and Storage Temperature Range
Max.
Units
30
±12.5
±10
±50
2.5
1.6
0.02
400
± 20
-55 to + 150
V
W/°C
mJ
V
°C
Max.
Units
50
°C/W
A
W
Thermal Resistance
Parameter
RθJA
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Maximum Junction-to-Ambientƒ
1
1/3/2000
Si4420DY
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
V(BR)DSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.028
–––
–––
–––
29
–––
–––
–––
–––
52
8.7
12
15
10
55
47
2240
1100
150
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.009
VGS = 10V, ID = 12.5A ‚
Ω
0.013
VGS = 4.5V, ID = 10.5A ‚
–––
V
VDS = VGS, ID = 250µA
–––
S
VDS = 15V, ID = 12.5A
1.0
VDS = 30V, VGS = 0V
µA
5.0
VDS = 30V, VGS = 0V, T J = 55°C
-100
VGS = -20V
nA
100
VGS = 20V
78
ID = 12.5A
–––
nC
VDS = 15V
–––
VGS = 10V, See Fig. 6 ‚
–––
VDD = 15V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
RD = 15Ω, ‚
–––
VGS = 0V
–––
pF
VDS = 15V
–––
ƒ = 1.0MHz, See Fig. 5‚
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Parameter
Continuous Source Current
(Diode Conduction)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Min. Typ. Max. Units
–––
–––
2.3
–––
–––
50
–––
–––
–––
52
1.1
78
A
V
ns
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.3A, VGS = 0V ‚
TJ = 25°C, IF = 2.3A
D
S
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
„ Starting TJ = 25°C, L = 13mH
RG = 25Ω, IAS = 8.9A. (See Figure 15)
‚ Pulse width ≤ 300µs; duty cycle ≤ 2%.
ƒ When mounted on FR4 Board, t ≤10 sec
2
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Si4420DY
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
100
100
4.5V
20µs PULSE WIDTH
TJ = 25 °C
10
0.1
1
10
4.5V
2.0
T J = -55°C
T J = 150°C
100
VDS = 25V
20µs PULSE WIDTH
6.0
7.0
8.0
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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9.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
TJ = 25°C
5.0
10
100
Fig 2. Typical Output Characteristics
1000
4.0
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
20µs PULSE WIDTH
TJ = 150 °C
10
0.1
100
VDS , Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (Α )
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
TOP
ID = 12.5A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
Si4420DY
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
C, Capacitance (pF)
3000
Ciss
2000
Coss
1000
20
VGS , Gate-to-Source Voltage (V)
4000
ID = 12.5A
VDS = 24V
VDS = 15V
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
Crss
0
1
10
0
100
0
20
VDS , Drain-to-Source Voltage (V)
100
OPERATION IN THIS AREA LIMITED
BY R DS(on)
TJ = 25 ° C
TJ = 150 ° C
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
80
1000
1000
100
100
10
1.0
2.0
3.0
4.0
Fig 7. Typical Source-Drain Diode
Forward Voltage
100us
1ms
10
10ms
TC = 25 ° C
TJ = 150 ° C
Single Pulse
V GS = 0 V
VSD ,Source-to-Drain Voltage (V)
4
60
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1
0.0
40
QG , Total Gate Charge (nC)
5.0
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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Si4420DY
100
14
12
P ower ( W )
I D , Drain Current (A)
80
10
8
6
60
40
4
20
2
0
0.01
0
25
50
75
100
TC , Case Temperature
125
150
A
0.1
( ° C)
1
10
100
T im e (sec )
Fig 10. Typical Power Vs. Time
Fig 9. Maximum Drain Current Vs.
Case Temperature
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
0.02
0.01
P DM
SINGLE PULSE
(THERMAL RESPONSE)
t1
0.1
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
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5
R D S(on ) , D rain-to-S ource O n Resistance (Ω)
Si4420DY
R DS(on) , Drain-to -Source On Resistance ( Ω )
0.20
0.16
0.12
0.08
V G S = 10V
V G S = 4.5V
0.04
0.00
0.012
0.010
ID = 12.5A
0.008
0.006
A
0
10
20
30
40
4.0
50
I D , D rain C urren t (A )
Fig 12. Typical On-Resistance Vs. Drain
Current
7.0
8.0
9.0
1000
EAS , Single Pulse Avalanche Energy (mJ)
VGS(th) , Variace (V)
6.0
2.5
ID = 250µA
2.0
1.5
1.0
-60
-20
20
60
100
10.0
Fig 13. Typical On-Resistance Vs. Gate
Voltage
3.0
140
180
TJ , Temperature (°C)
Fig 14. Typical Threshold Voltage Vs.Temperature
6
5.0
VGS, Gate -to -Source Voltage (V)
TOP
800
BOTTOM
ID
4.0A
7.1A
8.9A
600
400
200
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( ° C)
Fig 15. Maximum Avalanche Energy
Vs. Drain Current
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Si4420DY
SO-8 Package Outline
SO-8 Part Marking Information
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7
Si4420DY
SO-8 Tape & Reel Information
Dimensions are shown in millimeters (inches)
T E R M IN A L N U M B E R 1
1 2.3 ( .4 84 )
1 1.7 ( .4 61 )
8 .1 ( .31 8 )
7 .9 ( .31 2 )
F E E D D IR E C T IO N
N O TE S :
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.0 0
(12 .9 92 )
MAX.
14 .4 0 ( .5 6 6 )
12 .4 0 ( .4 8 8 )
NOTE S :
1 . C O N T R O L LIN G D IM E N S IO N : M IL L IM E T E R .
2 . O U T L IN E C O N FO R M S T O E IA -48 1 & E IA -54 1.
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Data and specifications subject to change without notice. 1/2000
8
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