PD- 93818A
IRGP30B120KD-E
Motor Control Co-Pack IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
VCES = 1200V
• Low VCE(on) Non Punch Through (NPT)
Technology
• Low Diode VF (1.76V Typical @ 25A & 25°C)
• 10 μs Short Circuit Capability
• Square RBSOA
• Ultrasoft Diode Recovery Characteristics
• Positive VCE(on) Temperature Coefficient
• Extended Lead TO-247AD Package
VCE(on) typ. = 2.28V
G
VGE = 15V, IC = 25A, 25°C
E
N-channel
Benefits
• Benchmark Efficiency for Motor Control
Applications
• Rugged Transient Performance
• Low EMI
• Significantly Less Snubber Required
• Excellent Current Sharing in Parallel Operation
• Longer leads for Easier Mounting
TO-247AD
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current (Fig.1)
Continuous Collector Current (Fig.1)
Pulsed Collector Current (Fig.3, Fig. CT.5)
Clamped Inductive Load Current(Fig.4, Fig. CT.2)
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation (Fig.2)
Maximum Power Dissipation (Fig.2)
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw.
Max.
Units
1200
60
30
120
120
30
120
± 20
300
120
-55 to + 150
V
A
V
W
°C
300, (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
ZθJC
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Transient Thermal Impedance Junction-to-Case
Min.
Typ.
Max.
–––
–––
–––
–––
–––
–––
–––
0.24
–––
6 (0.21)
0.42
0.83
–––
40
–––
Units
°C/W
g (oz)
(Fig.24)
1
9/17/07
IRGP30B120KD-E
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Min.
1200
ΔV(BR)CES / ΔTj Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation
VCE(on)
Voltage
VGE(th)
Gate Threshold Voltage
ΔVGE(th) / ΔTj
Temperature Coeff. of Threshold Voltage
gfe
Forward Transconductance
ICES
Zero Gate Voltage Collector Current
VFM
IGES
4.0
14.8
Typ.
+1.2
2.28
2.46
3.43
2.74
2.98
5.0
- 1.2
16.9
325
1.76
1.86
1.87
2.01
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Max. Units
V
V/°C
2.48
2.66
4.00
V
3.10
3.35
6.0
V
Conditions
Fig.
VGE = 0V,Ic =250 μA
VGE = 0V, Ic = 1 mA ( 25 -125 oC )
IC = 25A, VGE = 15V
5, 6
IC = 30A, VGE = 15V
7, 9
IC = 60A, VGE = 15V
10
IC = 25A, VGE = 15V, TJ = 125°C
11
IC = 30A, VGE = 15V, TJ = 125°C
VCE = VGE, IC = 250 μA
9 ,1 0 ,1 1 ,1 2
o
o
mV/ C VCE = VGE, IC = 1 mA ( 25 -125 C )
19.0
250
675
2000
2.06
2.17
2.18
2.40
±100
S
VCE = 50V, IC = 25A, PW=80μs
VGE = 0V,VCE = 1200V
μA
VGE = 0v, VCE = 1200V, TJ =125°C
VGE = 0v, VCE = 1200V, TJ =150°C
IC = 25A
V
IC = 30A
8
IC = 25A, TJ = 125°C
IC = 30A, TJ = 125°C
nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Qgc
Gate - Collector Charge (turn-on)
Eon
Turn-On Switching Loss
Eoff
Turn-Off Switching Loss
Typ.
169
19
82
1066
1493
Etot
Total Switching Loss
2559
3050
Eon
Turn-on Switching Loss
Eoff
Turn-off Switching Loss
1660
2118
1856
2580
Qg
Total Gate charge (turn-on)
Qge
Gate - Emitter Charge (turn-on)
Min.
Max. Units
Conditions
IC = 25A
254
29
nC VCC =600V
VGE = 15V
123
IC = 25A, VCC = 600V
1250
1800
μJ VGE = 15V, Rg = 5Ω, L =200μH
Etot
Total Switching Loss
3778
4436
td(on)
Turn - on delay time
tr
Rise time
td(off)
Turn - off delay time
tf
Fall time
65
35
230
75
Cies
Input Capacitance
Coes
Output Capacitance
Cres
Reverse Transfer Capacitance
50
25
210
60
2200
210
85
Reverse bias safe operating area
23
CT 1
CT 4
WF1
o
TJ = 25 C, Energy losses include tail
and diode reverse recovery
Ic =25A, VCC=600V
μJ
WF2
13, 15
VGE = 15V, Rg = 5Ω, L =200μH
CT 4
o
TJ = 125 C, Energy losses include tail
and diode reverse recovery
Ic =25A, VCC=600V
ns
WF1 & 2
14, 16
VGE = 15V, Rg = 5Ω, L =200μH
o
TJ = 125 C,
CT 4
WF1
WF2
VGE = 0V
pF
VCC = 30V
22
f = 1.0 MHz
o
RBSOA
Fig.
TJ =150 C, Ic = 120A
VCC = 1000V, VP = 1200V
FULL SQUARE
4
CT 2
Rg = 5Ω, VGE = +15V to 0 V
SCSOA
Short Circuit Safe Operating Area
Erec
Reverse recovery energy of the diode
trr
Diode Reverse recovery time
Irr
Peak Reverse Recovery Current
Le
Internal Emitter Inductance
10
----
----
μs
1820
300
34
13
2400
μJ
ns
A
nH
TJ = 150oC
VCC = 900V,VP = 1200V
CT 3
WF4
Rg = 5Ω, VGE = +15V to 0 V
2
38
o
TJ = 125 C
VCC = 600V, Ic = 25A
1 7 ,1 8 ,1 9
VGE = 15V, Rg = 5Ω, L =200μH
CT 4 , WF3
20, 21
Measured 5 mm from the package.
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IRGP30B120KD-E
Fig.1 - Maximum DC Collector
Current vs. Case Temperature
Fig.2 - Power Dissipation vs. Case
Temperature
70
320
60
280
240
50
(W)
tot
30
P
I
C
(A)
200
40
20
160
120
80
10
40
0
0
0
40
80
120
160
0
40
120
160
T C (°C)
T C (°C)
Fig.3 - Forward SOA
T C =25°C; Tj < 150°C
1000
80
Fig.4 - Reverse Bias SOA
Tj = 150°C, V GE = 15V
1000
PULSED
2μ s
100
10μs
100
(A)
10
I
1ms
I
C
C
(A)
100μs
10
1
10ms
DC
0.1
1
1
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10
100
V CE (V)
1000
10000
1
10
100
V CE (V)
1000
10000
3
IRGP30B120KD-E
Fig.6 - Typical IGBT Output
Characteristics
Tj=25°C; tp=300μs
Fig.5 - Typical IGBT Output
Characteristics
Tj= -40°C; tp=300μs
60
55
V GE = 12V
V GE = 15V
50
V GE = 10V
V GE = 12V
45
V GE = 10V
40
40
V GE = 8V
35
35
45
(A)
V GE = 8V
30
C
30
C
25
I
I
V GE = 18V
55
V GE = 15V
50
(A)
60
V GE = 18V
25
20
20
15
15
10
10
5
5
0
0
0
1
2
3
4
V CE (V)
5
0
6
Fig.7 - Typical IGBT Output
Characteristics
Tj=125°C; tp=300μs
60
V GE = 18V
45
40
V GE = 10V
45
V GE = 8V
40
(A)
35
30
6
35
30
25
20
20
15
15
10
10
5
5
0
0
0
4
5
F
25
I
I
C
(A)
50
V GE = 12V
3
4
V CE (V)
- 40°C
25°C
125°C
55
V GE = 15V
50
2
Fig.8 - Typical Diode Forward
Characteristic
tp=300μs
60
55
1
1
2
3
V CE (V)
4
5
6
0
1
2
V F (V)
3
4
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IRGP30B120KD-E
Fig.10 - Typical V CE vs V GE
Tj= 25°C
20
20
18
18
16
16
14
14
12
12
10
V CE ( V )
V
CE
(V)
Fig.9 - Typical V CE vs V GE
Tj= -40°C
I CE =10A
I CE =25A
I CE =50A
8
10
I CE =10A
I CE =25A
I CE =50A
8
6
6
4
4
2
2
0
0
6
8
10
12
14
V GE (V)
16
18
20
6
18
225
16
200
14
175
12
150
4
50
2
25
0
0
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16
18
Tj=25°C
Tj=125°C
C
75
12 14
V GE (V)
20
100
6
10
18
125
I CE =10A
I CE =25A
I CE =50A
8
16
(A)
250
6
12 14
V GE (V)
I
V CE ( V )
20
8
10
Fig.12 - Typ. Transfer Characteristics
V CE =20V; tp=20μs
Fig.11 - Typical V CE vs V GE
Tj= 125°C
10
8
20
Tj=125°C
Tj=25°C
0
4
8
12
V GE (V)
16
20
5
IRGP30B120KD-E
Fig.13 - Typical Energy Loss vs Ic
Tj=125°C; L=200μH; V CE =600V;
Rg=22 Ω ; V GE =15V
Fig.14 - Typical Switching Time vs Ic
Tj=125°C; L=200μH; V CE =600V;
Rg=22 Ω ;V GE =15V
8000
1000
Eon
7000
tdoff
Eoff
5000
tf
t (nS)
Energy (μJ)
6000
4000
tr
100
3000
tdon
2000
1000
0
10
0
10
20
30
I C (A)
40
50
0
60
10
20
30
I C (A)
40
50
60
Fig.16 - Typical Switching Time vs Rg
Tj=125°C; L=200μH; V CE =600V;
I CE =25A; V GE =15V
Fig.15 - Typical Energy Loss vs Rg
Tj=125°C; L=200μH; V CE =600V;
I CE =25A; V GE =15V
1000
3500
Eon
3300
tdoff
3100
2700
Eoff
2500
t (nS)
Energy (uJ)
2900
tdon
100
2300
tr
tf
2100
1900
1700
1500
10
0
6
5 10 15 20 25 30 35 40 45 50 55
Rg (ohms)
0
5
10 15 20 25 30 35 40 45 50 55
Rg (ohms)
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IRGP30B120KD-E
Fig.17 - Typical Diode I RR vs I F
Tj=125°C
45
40
40
35
35
Rg=5 Ω
25
30
I RR ( A )
30
IRR ( A )
45
Rg=10 Ω
20
Rg=22 Ω
25
20
15
15
Rg=51 Ω
10
Fig.18 - Typical Diode I RR vs Rg
Tj=125°C; I F =25A
10
5
5
0
0
0
10
20
30
I F (A)
40
50
0
60
5
Fig.19 - Typical Diode I RR vs dI F /dt
Rg (ohms)
Fig.20 - Typical Diode Q RR
V CC =600V; V GE =15V
V CC =600V; V GE =15V; Tj=125°C
I F =25A; Tj=125°C
45
10 15 20 25 30 35 40 45 50 55
7000
40
6500
Rg=5 Ω
35
22 Ω
51 Ω
6000
30
10 Ω
40A
30A
QRR ( n C )
(A)
5500
25
5000
RR
Rg=10 Ω
Rg=22 Ω
15
10
3500
5
3000
0
2500
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500
1000
dI F / dt (A/μs)
20A
4000
Rg=51 Ω
0
25A
4500
I
20
5Ω
50A
1500
0
500
1000
1500
dI F / dt (A/μs)
7
IRGP30B120KD-E
Fig.21 - Typ. Diode E rec vs. I F
Tj=125°C
2400
5Ω
2200
10 Ω
22 Ω
Energy (uJ)
2000
51 Ω
1800
1600
1400
1200
1000
800
0
10
20
30
I F (A)
40
50
60
Fig.23 - Typ. Gate Charge vs. V GE
I C =25A; L=600μH
Fig.22 - Typical Capacitance vs V CE
V GE =0V; f=1MHz
16
10000
600V
14
C ies
800V
1000
10
V GE ( V )
CapacItance (pF)
12
C oes
6
100
4
C
res
2
0
10
0
20
40
60
V CE (V)
8
8
80
100
0
40
80
120
160
200
Q G , Total Gate Charge (nC)
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IRGP30B120KD-E
Fig.24 - Normalized Transient Thermal Impedance, Junction-to-Case
θ
10
1
D =0.5
0.2
0.1
0.1
0.05
P DM
0.02
0.01
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + T C
SINGLE
PULSE
0.001
0.00001
0.00010
0.00100
0.01000
0.10000
1.00000
10.00000
t 1 , Rectangular Pulse Duration (sec)
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9
IRGP30B120KD-E
Fig. CT.1 - Gate Charge Circuit (turn-off)
Fig. CT.2 - RBSOA Circuit
L
L
VCC
DUT
0
80 V
DUT
1000V
Rg
1K
Fig. CT.4 - Switching Loss Circuit
Fig. CT.3 - S.C. SOA Circuit
diode clamp /
DUT
Driver
D
C
900V
L
- 5V
DUT /
DRIVER
DUT
VCC
Rg
Fig. CT.5 - Resistive Load Circuit
R=
DUT
VCC
ICM
VCC
Rg
10
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IRGP30B120KD-E
Fig. WF.1 - Typ. Turn-off Loss Waveform
@ Tj=125°C using Fig. CT.4
Fig. WF.2 - Typ. Turn-on Loss Waveform
@ Tj=125°C using Fig. CT.4
800
40
900
45
700
35
800
40
600
30
700
35
TEST CURRENT
90% ICE
500
25
400
20
600
30
300
15
25
90% test current
ICE ( A )
tf
V CE ( V )
I CE ( A )
V CE ( V )
500
400
20
tr
300
200
15
10% test current
10
200
5% VCE
100
5
5% ICE
0
0
10
5% VCE
100
5
0
0
Eon Loss
Eoff Loss
-100
-0.5
-5
0.0
0.5
1.0
1.5
2.0
2.5
-100
-5
4.0
4.1
4.2
t I me (μs)
4.3
4.4
4.5
t I me (μs)
Fig. WF.4 - Typ. S.C. Waveform
@ TC=150°C using Fig. CT.3
Fig. WF.3 - Typ. Diode Recovery Waveform
@ Tj=125°C using Fig. CT.4
0
-200
30
1200
20
1000
10
800
QRR
250
200
VCE
-800
ICE
100
-10
400
50
-20
200
0
-30
0
ICE (A)
150
600
0
10%
Peak
IRR
VCE (V)
V C E( V )
-600
IC E( A )
tRR
-400
Peak
IRR
-1000
-1200
-0.5
0.0
0.5
t I me (μS)
1.0
-50
-5
0
5
10 15 20 25 30
time (μS)
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11
IRGP30B120KD-E
TO-247AD Package Outline (Dimensions are shown in millimeters (inches))
9. For the most current drawing please refer to IR website
at http://www.irf.com/package/pkigbt.html
TO-247AC package is not recommended for Surface Mount Application.
TO-247AD Part Marking Information
EXAMPLE: T HIS IS AN IRGP30B120KD-E
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2000
IN T HE AS S EMBLY LINE "H"
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
ASS EMBLY
LOT CODE
PART NUMBER
56
035H
57
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
WORLD HEADQUARTERS: 233 Kansas
St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
9/07
12
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