3. SIMULATION To prove the above analysis, the conventional and proposed power dividers were designed at 2.0 GHz with Z1 ⫽ 50#⍀ and Z2 ⫽ 25#⍀. Table 1 indicates that new structure has lower inductance, reducing the effect of self resonance. Figure 4 compares the simulated S-parameters of the conventional and proposed power divider. On the basis of ⫺15 dB, the new power divider provides wider bandwidth by 25% in input return loss (S11) and by 70% in the isolation (S23) than the conventional one. The insertion loss (S21) of the proposed divider rolls off more softly at low frequency end as shown in Figure 4(c). 4. MEASUREMENT The proposed power divider was fabricated on Teflon substrate using 1.6 ⫻ 0.8 mm2 chip elements. Figure 5 shows the fabricated power divider. Since this structure has a termination impedance of 25 ⍀ at ports 2 and 3, quarter-wave long lines with characteristic impedance of Z0 ⫽ 冑Z1 䡠 Z2 ⫽ 35.4⍀ are placed at the output ports 2 and 3 for a 50 ⍀-based measurement. To minimize the parasitic inductance of interconnection and via-hole, the shunt inductor L1 was inserted into the via-hole and directly grounded. The measurement results are given in Figure 6. The center frequency shifts to 1.9 GHz from the targeted 2.0 GHz, probably due to the manufacturing errors and parasitic effect of lumped chip elements and interconnections. On the basis of ⫺15 dB, the input return loss (S11), output return loss (S22) and isolation performance (S23) shows the fractional bandwidth of 13.8, 19.9, and 36.5%, respectively. The insertion loss (S21) is less than ⫺3.3 dB at the center frequency with broadband performance. 5. CONCLUSIONS In this article, a new impedance-transforming power divider was proposed using lumped elements only. It was designed to have a low Q-factor during the impedance transformation to achieve wide bandwidth. The comparative study proved that the new power divider can achieve wider bandwidth than the conventional one in terms of the return loss, insertion loss and isolation performance. Therefore, the proposed power divider can be applied for advanced microwave systems with compact size requiring the impedancetransforming characteristics such as balanced power amplifiers. Figure 6 Measured S-parameters of the fabricated power divider ACKNOWLEDGMENTS The present research has been conducted by the research grant of Kwangwoon University in 2008. REFERENCES 1. D.M. Pozar, Microwave engineering, 3rd ed., Wiley, NJ, 2005. 2. R.K. Gupta, S.E. Anderson, and W.J. Getsinger, Impedance-transforming 3-dB 90° hybrids, IEEE Trans Microwave Theory Tech MTT-35 (1987), 1303–1307. 3. M. Dydyk, Impedance transforming three-port power divider/combiner using lumped elements, U.S. Patent 5,469,129, November 21, 1995. 4. H.S. Nagi, Miniature lumped element 180° Wilkinson divider, IEEE MTT-S Dig, Philadelphia, PA (2003), 55–58. 5. L.-H. Lu, X-band and K-band lumped Wilkinson power dividers with a micromachined technology, IEEE MTT-S Dig (2000), 287–290. 6. I.D. Robertson and S. Lucyszyn, RFIC and MMIC design and technology, The Institution of Electrical Engineers, United Kingdom, 2001. 7. P. Vizmuller and R.F. Design guide systems, circuits, and equations, Artech House, Norwood, MA, 1995. © 2009 Wiley Periodicals, Inc. PRECISE FREQUENCY AND BANDWIDTH CONTROL OF MICROSTRIP SWITCHABLE BANDSTOP FILTERS Zabdiel Brito-Brito, Ignacio Llamas-Garro, and Lluis Pradell Department of Signal Theory and Communications, Technical University of Catalonia, 08034 Barcelona, Spain; Corresponding author: llamasi@ieee.org Received 16 February 2009 Figure 5 Fabricated impedance-transforming power divider. Two quarter-wave long microstrip lines are placed at ports 2 and 3 to transform the impedance from 25 back to 50 ⍀ for a 50-based measurement. [Color figure can be viewed in the online issue, which is available at www. interscience.wiley.com] DOI 10.1002/mop ABSTRACT: In this article two switchable bandstop filters able to switch precisely between two different center frequency and bandwidth states are presented. The filter topologies allow precise control over the design parameters frequency and bandwidth, achieved by choosing adequate resonator sections switched by PIN diodes. Center frequency control was obtained by modifying resonator length. Bandwidth control was achieved by choosing a resonator width and controlling the normalized reactance slope parameter of the decoupling resonators by means of switchable resonator extensions. Both filters were designed to have a 32.5% center frequency tuning range at L band between a low and high filter center frequency. One topology focuses on producing an 8% fractional stopband bandwidth for both filter states. The second filter topol- MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 51, No. 11, November 2009 2573 ogy focuses on producing 7 and 9% fractional stopband bandwidths for the low and high filter center frequency states, respectively. Measured results show a very good agreement with the simulations, for the first topology a 32.2% measured center frequency tuning range was obtained with 8.1 and 8.75% fractional stopband bandwidths for the low and high filter center frequency states, respectively. The second filter topology showed a 31.2% measured center frequency tuning range with 6.94 and 9.66% fractional stopband bandwidths for the low and high filter center frequency states, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2573–2578, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop. 24679 Key words: bandstop filter; reconfigurable filter; stopband bandwidth; PIN diode 1. INTRODUCTION Switchable filters are an important part in communication systems that allow selecting different bands of operation. Reconfigurable bandstop filters can be used in adaptable image rejection receivers or to tune out interfering signals in a microwave instrument. Filter parameters like center frequency or bandwidth can be controlled continuously, discretely, or a combination of both. Continuously tuned filters have been implemented using varactor diodes [1–11], MEMS varactors [12–18], or ferroelectric materials [19 –22]. On the other hand, discretely tuned filters have been implemented using PIN diodes [23–29] or MEMS switches [30 –34]. Considering only reconfigurable bandstop filters, most of the designs reconfigure filter center frequency and do not include fractional stopband bandwidth control for each filter state in the design [1, 2, 10 –13, 31, 32]. In [35], a bandstop filter combining continuous and discrete tuning using varactor and PIN diodes is presented. In this article, we demonstrate two filter topologies able to tune filter center frequency with an independently defined fractional stopband bandwidth for each filter state. Although the first topology was destined to produce a fixed fractional stopband bandwidth for both filter center frequency states [36], the second, new filter topology is able to produce a different fractional stopband bandwidth for each filter state. In addition to the design procedure of [36], a loss analysis has been done for both topologies to show the effect of PIN diode contact resistance on filter insertion loss. Both filters in this article were designed to have a 32.5% center frequency tuning range; in the first topology, the fractional stopband bandwidth for both filter states is fixed to 8%, while the second filter has a 7 and 9% fractional stopband bandwidth for the filter low and high center frequency states, respectively. It can be noted that by varying the filter design parameters exposed in this article, other fractional stopband bandwidths and center frequencies can be obtained for switchable microstrip bandstop filters. Figure 1 Switchable bandstop filter with center frequency control and fixed stopband bandwidth 2574 Figure 2 Normalized reactance slope parameter for different resonator spacing s from the main transmission line. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] 2. SWITCHABLE BANDSTOP FILTER WITH CENTER FREQUENCY CONTROL AND FIXED STOPBAND BANDWIDTH The design of narrow bandstop filters can be based on the reactance slope parameter of individual resonators normalized to the characteristic impedance of a main transmission line x/Z0, where the resonators are connected by immittance inverters as discussed in [37]. Figure 1 shows a two pole switchable bandstop filter topology using four PIN diodes. Large fractional stopband bandwidths require small x/Z0 values, which results in small distances between the main line and the resonators. The normalized reactance slope parameter x/Z0 can also be adjusted by varying resonator width W; small values of resonator width result in small x/Z0 values for a given resonator spacing s from the main line (see Fig. 1). When reducing resonator width to adjust x/Z0 values, the designer must ensure appropriate resonator unloaded quality factors for a given filter design, especially when dealing with narrow stopband filters. For the filter topology in Figure 1, all PIN diodes are forward biased to produce the filter low center frequency state, and all PIN diodes when reverse biased produce the filter high center fre- Figure 3 Photograph of the switchable bandstop filter with center frequency control and fixed stopband bandwidth. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 51, No. 11, November 2009 DOI 10.1002/mop Figure 4 Simulated and measured results for the switchable bandstop filter with center frequency control and fixed stopband bandwidth. [Color figure can be viewed in the online issue, which is available at www. interscience.wiley.com] quency state. The filter provides a 32.5% center frequency tuning range. The relation between the normalized reactance slope parameter that defines filter fractional stopband bandwidth and the spacing s between the main transmission line and both resonators is shown in Figure 2. It is apparent from Figure 2 that the length of the switchable resonator extensions A and B in Figure 1 have been chosen to produce two center frequency states with a fixed fractional stopband bandwidth. The resonator extensions A in Figure 1 are carefully chosen to produce the same normalized reactance slope parameter x/Z0 for both, high frequency and low frequency resonators, to assure a fixed fractional stopband bandwidth. The resonator extensions B are added up to the resonators to produce a center frequency tuning range of 32.5% between the filter low and high center frequency states. The fractional stopband bandwidth for the design is fixed to 8% for both filter center frequency states. HPND-4028 Avago Technologies beam lead PIN diodes were used for the filter. The RF chokes used to supply DC bias to the diodes were 82 nF inductors from Tyco Electronics with a self resonance at 1.7 GHz. 1 K⍀ limiting resistors were used to fix a 10 mA current through the diodes. The filter was fabricated using conventional photolithographic techniques on a Rogers RO4003C substrate. A photograph of the fabricated filter is shown in Figure 3. The measured and simulated [38] results for the filter low and high center frequency states are shown in Figure 4. Table 1 contains a comparison between the simulated [38] and measured results, where a good agreement between theory and experiment in terms of filter center frequency and stopband bandwidth was obtained for both the filter states. Figure 5 Simulated results for different values of PIN diode contact resistance for the switchable bandstop filter with center frequency control and fixed stopband bandwidth; r1 ⫽ 1 ⍀, r2 ⫽ 2 ⍀, r3 ⫽ 3 ⍀, and r4 ⫽ 4 ⍀. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] Figure 5 shows the simulated [38] results considering the effect of different PIN diode contact resistances r on the switchable bandstop filter with center frequency control and fixed stopband bandwidth. The simulation includes choke inductors to supply DC bias to the diodes [39]. The lumped element models for the PIN diodes used in simulations are similar to the ones exposed in [40]. The simulations in Figure 5 were done using diode contact resistances r1 ⫽ 1 ⍀, r2 ⫽ 2 ⍀, r3 ⫽ 3 ⍀, and r4 ⫽ 4 ⍀. It is apparent from Figure 5 that these values of PIN diode contact resistance have negligible effect on filter performance. 3. SWITCHABLE BANDSTOP FILTER WITH CENTER FREQUENCY CONTROL AND VARIABLE STOPBAND BANDWIDTH Figure 6 shows a two pole switchable bandstop filter using six PIN diodes able to produce two filter center frequencies with a 32.5% center frequency tuning range. The filter provides two different fractional stopband bandwidths for each filter center frequency state. In this filter topology, D1 and D2 are reverse biased, whereas D3, D4, D5, and D6 are forward biased to produce the filter low center frequency state with a 7% fractional stopband bandwidth. For the filter, high center frequency state D1 and D2 are forward biased, whereas D3, D4, D5, and D6 are reverse biased resulting in a 9% fractional stopband bandwidth. The length of the switchable resonator extensions C, D, and E in Figure 6 are chosen to produce two center frequency states with a different stopband bandwidth for each filter state. First the length of the high frequency resonator is set to produce a resonance at the TABLE 1 Simulated and Measured Results for the Switchable Bandstop Filter with Center Frequency Control and Fixed Stopband Bandwidth Simulated Measured Stopband Bandwidth Center Frequency Tuning Range (%) Low Frequency State (%) High Frequency State (%) 32.6 32.2 8.5 8.1 8.08 8.75 DOI 10.1002/mop Figure 6 Switchable bandstop filter with center frequency control and variable stopband bandwidth MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 51, No. 11, November 2009 2575 Figure 7 Low frequency resonator coupled to the main transmission line filter high center frequency state. Then the high frequency resonator in Figure 6 is bent to assure an adequate normalized reactance slope parameter x/Z0 between the main line and the resonator to produce the 7% fractional stopband bandwidth. Diodes D1 and D2 disconnect the switchable resonator extensions C of the high frequency resonators from the coupled central sections to avoid unwanted resonances near the band of interest when the filter operates in the low center frequency state. To set the filter low center frequency response, the length of the low frequency resonator in Figure 7 is chosen to produce a resonance at the desired filter low center frequency state. The length, width, and angle ⍜ of the resonator extension D in Figure 7 is chosen to produce the required x/Z0 value to produce a 9% fractional stopband bandwidth. The calculated effect [38] when varying the angle ⍜ in Figure 7 to fine adjust x/Z0 to produce the 9% stopband bandwidth is shown in Figure 8, where x/Z0 values increase as ⍜ increases, thus reducing the filter stopband bandwith, and x/Z0 values decrease as ⍜ decreases, increasing the filter stopband bandwidth. Plots of the normalized reactance slope parameter versus the spacing s between the main transmission line and both resonators for the filter with center frequency control and variable stopband bandwidth of Figure 6 are shown in Figure 9. The surface mount components, substrate, and fabrication techniques used to produce this filter were the same as the ones used for the filter discussed in Section 2. A photograph of the fabricated filter is shown in Figure 10. Figure 8 Normalized reactance slope parameter for different ⍜ values. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] 2576 Figure 9 Normalized reactance slope parameter for different resonator spacing s from the main transmission line. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] Figure 11 shows the simulated [38] and measured results for the filter with center frequency control and variable stopband bandwidth. Table 2 contains a comparison between the simulated [38] and measured results, where a good agreement between theory and experiment in terms of filter center frequency and stopband bandwidth was obtained for both the filter states. A slight and uniform frequency shift of about 5.5% between simulations and measurements was obtained, and is believed to be attributed to small resonator extensions added to the final layout before fabrication, to ease the placement of diodes D1, D2, D3, and D4, this resulted in an enlargement the overall electrical length of the resonators when compared with the simulated response. Figure 12 shows the simulated [38] results considering the effect of different PIN diode contact resistances r on the switchable bandstop filter with center frequency control and variable stopband bandwidth. The simulations include the RF choke discussed in Section 2. For this filter topology, PIN diode contact resistance determines the degree of stopband rejection, it is apparent from Figure 12 that a PIN diode with a low contact resistance will produce a deeper Figure 10 Photograph of the switchable bandstop filter with center frequency control and variable stopband bandwidth. [Color figure can be viewed in the online issue, which is available at www.interscience. wiley.com] MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 51, No. 11, November 2009 DOI 10.1002/mop Figure 11 Simulated and measured results for the switchable bandstop filter with center frequency control and variable stopband bandwidth. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] notch for the filter stopband due to lower resonator loss. The losses in the filter low frequency state are also higher than the filter high frequency state due to the use of thinner resonators, combined with the effect of having two PIN diodes along the resonator for the low filter center frequency state. The filter discussed in this section is capable of producing the 7 and 9% fractional stopband bandwidths for the low and high filter center frequency states with good accuracy. Loss improvement can be obtained by using PIN diodes with lower contact resistances, or by having a filter topology where the diodes are not placed near the maximum current distribution on the resonators and also by using wider resonators for the filter low frequency state. 4. CONCLUSION Two switchable bandstop filters with two center frequency states and full control of their stopband bandwidth were demonstrated. One filter topology is adequate to produce the same fractional stopband bandwidth for both filter center frequency states. The second topology exposed is able to produce two different stopband bandwidths for each filter center frequency state. The filters discussed in this article use switchable resonator extensions to fix center frequency and stopband bandwidth parameters. The filter topologies in this paper can be modified to produce other frequencies and bandwidths which can be controlled by choosing adequate resonator extensions. ACKNOWLEDGMENTS This work has been financed by research project TEC2007– 65705/ TCM from the Spanish Ministry of Education and Culture, and research project 2006ITT-10005 from AGAUR-Generalitat de Catalunya. TABLE 2 Simulated and Measured Results for the Switchable Bandstop Filter with Center Frequency Control and Variable Stopband Bandwidth Simulated Measured Stopband Bandwidth Center Frequency Tuning Range (%) Low Frequency State (%) High Frequency State (%) 32.7 31.2 7.19 6.94 9.14 9.66 DOI 10.1002/mop Figure 12 Simulated results for different PIN diode contact resistance for the switchable bandstop filter with center frequency control and variable stopband bandwidth; r1 ⫽ 1 ⍀, r2 ⫽ 2 ⍀, r3 ⫽ 3 ⍀, and r4 ⫽ 4 ⍀. [Color figure can be viewed in the online issue, which is available at www.interscience.wiley.com] REFERENCES 1. I.C. Hunter and J.D. Rhodes, Electronically tunable microwave bandstop filters, IEEE Trans Microwave Theory Tech MTT-30 (1982), 1361–1367. 2. S.R. Chandler, I.C. Hunter, and J.G. Gardiner, Active varactor tunable microwave filters, Proceedings of 23rd European Microwave Conference, 1993, pp. 244 –245. 3. C.-K. Liao, C.-Y. Chang, and J. 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Corona-Chavez, Microstrip switchable bandstop filter using PIN diodes with precise frequency and bandwidth control, Proceedings of 38th European Microwave Conference, Amsterdam, The Netherlands, 2008, 1707–1710. 37. J.-S. Hong and M. J. Lancaster, Microstrip filters for RF/microwave applications, Wiley, New York, NY (2001). 38. Advanced Design System 2006 Update 3. Available at: http:// www.home.agilent.com/. 39. H. Xue, P.B. Kenington, and M.A. Beach, A high performance ultrabroadband RF choke for microwave applications, IEE Colloquium on Evolving Technologies for Small Earth Station Hardware, 1995, p. 4. 40. C.T. Rodenbeck, J.M. Carroll, R.A. Flynt, and K. Chang, Bias-dependent small-signal monolithic PIN diode modeling, Int J RF Microwave Comput-Aided Eng 11 (2001), 396 – 403. © 2009 Wiley Periodicals, Inc. DESIGN OF SQUARE MICROSTRIP ANTENNA FOR DUAL WIDEBAND OPERATION Kishan Singh, R. B. Konda, N. M. Sameena, and S. N. Mulgi Department of PG Studies and Research in Applied Electronics, Gulbarga University, Gulbarga-585106, Karnataka, India; Corresponding author: kishanskrish@gmail.com Received 15 March 2009 ABSTRACT: A novel design of square microstrip antenna is designed for dual band operation. By embedding unequal length inverted right angle slot at optimum place on the square patch, the upper operating band enhanced from 27.53 to 60.01% with minimum change in the lower operating band retaining the nature of broad side radiation characteristics. The proposed antennas may find application in radar communication. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 2578 –2582, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24678 Figure 1 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS / Vol. 51, No. 11, November 2009 Geometry of SQMA DOI 10.1002/mop