CSSC14N40A10
Single Chip Module
Data Sheet Rev 3 CAO-20150731
Device
Package
Format
Peak Current
IPK(A)(X100)
Semiconductor
Type
Voltage
VPK(V)(X100)
Testing
CCS
SC
14
N
40
A10
Applications:
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Package:
Discharge switch
Features:
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5kV peak off-state voltage
10kA repetitive Ipk capability
60 kA/µS di/dt capability
Low on-state voltage
Low trigger current
Low inductance package
Blocking voltage 5kV
Description:
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This Current Controlled Solidtron™
(CCS) semiconductor switch utilizes
advanced thyristor technology and
contains 1 SGTO device attached to
an electrically conductive metallic
base plate.
N-type thyristor in a high
performance package.
Device gate is similar to that found
on a traditional Thyristor.
High peak current capability and low
On-State voltage drop.
Intended to be a solid state
replacement for spark or gas type
devices commonly used in pulse
power applications.
Metallized ceramic substrate attached
to the silicon using 302⁰C solder.
Extremely attractive for high di/dt
applications where stray series
inductance must be kept to a
minimum.
Symbol:
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Anode (A)
Gate (G)
Cathode (K)
Dimensions:
Absolute Maximum Ratings
Peak off-state voltage
Symbol
VDRM
Value
5
Units
kV
Peak reverse voltage
VRRM
-5
V
Off-state rate of change of voltage immunity
dv/dt
1
kV/µS
Continuous anode current at Tj = 125⁰C
IA110
100
A
Repetitive peak anode current (Pulse Width = 10µ)
IASM
10.0
kA
Nonrepetitive Peak Anode Current (Pulse Width = 10µ)
IASM
14
kA
Rate of change of current
di/dt
60
kA/µS
Peak gate current (1µ)
Max. reverse gate-cathode voltage
IGpk
VGR
100
-9
A
V
Maximum junction temperature
TjM
125
⁰C
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Performance Characteristics ( Tj = 25⁰C unless otherwise specified.)
Measurements
Performance Ratings
Parameters
Symbol
Min.
Typ.
Max.
Units
Anode to cathode breakdown
voltage
Anode-cathode off-state current
VDR
4
5
5.5
kV
VGK=0V, IA = 1mA
<50
100
µA
100
800
µA
VGK=0V,
VAK=4000V
ID
Turn-on threshold current
VGK(TH)
Gate-cathode leakage current
IGK(IKQ)
Anode-cathode on-state voltage
Turn-on delay time
Peak rate of change of current
Peak anode current
5
Ton
di/dt
IP
30
Tj=25⁰C
Tj=125⁰C
mA
VAK=VGK , 1mA, See Note 1
µA
VGK=0V, See Note 1
1.7
V
1.9
V
IT=400A
Ig=500mA
200
60
ns
kA/us
20
VT
Test Conditions
10
70
kA
Tj=25⁰C
Tj=125⁰C
0.75 µF Capacitor discharge
VAK = 3.95 kV
Tj=25⁰C
RGK = 10ohms, Ls = 90nH
Gate di/dt = 100 A/us
Notes:
1. . Measurements made with a 10 Ohm shorting resistor connected between the gate and
cathode.
2. Case Exterior Assumed to be 0.002” of 63sn/37pb solder applied directly to cathode bond
area of ThinPak.
3. All product specifications and data are subject to change without notice. Devices shall be
tested and qualified in their respective applications and circuitry. Depending on the
application and circuitry, adjustments to the specifications may be necessary. We
strongly recommend consultation of Silicon Power personal prior to using our products in
medical, life-saving, or life-sustaining applications and systems.
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Packaging and Handling
1. Use thermal grease to mount device to cold plate.
2. Consult factory for mounting torque.
3. Do not exceed 175°C device body temperature when soldering
leads of the package or internal package gradation may result.
4. ‘ATTENTION OBSERVE PRECAUTIONS FOR HANDLING
ELECTROSTATIC DISCHARGE SENSITIVE DEVICES IN
ALL ASSEMBLY AND TEST AREAS’
5. Shorting resistor RGK is application specific. It can control the
gate drive requirements and some device properties. However,
RGK = 10 Ohms satisfies most application requirements.
6. All metal surfaces are flash gold over nickel plating for solderability.
Test Profile
1. Off State leakage Current at 25° C and 5500V against < 2 uA specification
2. Off State leakage Current at 125° C and 5500V against < 1200 uA specification
3. Gate Integrity at 25° C and 12V applied is measured as Pass or Fail
Revision History
Revision Number
Revision Date
Reason For Change
1
2
3
5/20/08
3/05/12
7/31/15
Improved datasheet structure; added performance curves
Updated drawing
Regeneration to Standard; revision log update
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