Goal: Evaluate impact of microstructure in the dissolution behavior of ALD Al2O3 thin films in aqueous and alkaline solutions
Description: Aluminium oxide is a potential thin film dielectric material in advanced Silicon on Insulator
(SOI) based devices due to its good etch stop capability in DRIE etching. Atomic layer deposition (ALD) can be used to fabricate consistently low microroughness Al2O3 thin films for silicon direct bonding.
However, dissolution of ALD processed Al2O3 thin films in wafer cleaning solutions would prevent its implementation in manufacturing. In this thesis work, the goal is to evaluate ALD Al2O3 thin films and clarify the microstructural characteristics contributing to a high stability Al2O3. The work is part of the
ECSEL JU project InForMed (An Integrated Pilot Line for Micro-Fabricated Medical Devices). More information can be found under http://www.informed-project.eu/.
Content:
Assess different methods to analyse amount of dissolved aluminium
Define DoE and conduct the dissolution experiments with as-deposited and annealed samples
Film thickness measurements before and after DoE
Perform analysis of solutes
Sample preparation and microstructural and compositional characterization of thin films (in cooperation with experts)
Dissolution in phosphate-buffered saline and cytotoxicity tests for water-insoluble films
Working place: Aalto University School of Electrical Engineering, Department of Electrical Engineering and Automation, Research group Electronics Integration and Reliability.
Applications: Applications should contain CV, study transcripts and an applicant letter and they have to be delivered by 28.2.2016 to Mervi Paulasto-Kröckel at mervi.paulasto@aalto.fi
. For additional information please contact Mikael Broas at mikael.broas@aalto.fi
.