PD - 94279
IRF7822
HEXFET® Power MOSFET for DC-DC Converters
•
•
•
•
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
Low Switching Losses
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that
are critical in synchronous buck converters including
RDS(on), gate charge and Cdv/dt-induced turn-on immunity.
The IRF7822 offers particulary low RDS(on) and high Cdv/
dt immunity for synchronous FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
DEVICE CHARACTERISTICSU
IRF7822
RDS(on)
5.0mΩ
QG
44nC
Qsw
12nC
Qoss
27nC
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source
TA = 25°C
Current (VGS ≥ 4.5V)
TA = 70°C
Pulsed Drain CurrentQ
Power Dissipation
TA = 25°C
Symbol
IRF7822
VDS
30
VGS
±12
ID
18
IDM
150
PD
3.1
13
TA = 70°C
Units
V
A
W
3.0
TJ, TSTG
–55 to 150
°C
Continuous Source Current (Body Diode)
IS
3.8
A
Pulsed Source CurrentQ
ISM
150
Parameter
Maximum Junction-to-AmbientS
RθJA
Max.
40
Units
°C/W
Maximum Junction-to-Lead
RθJL
20
°C/W
Junction & Storage Temperature Range
Thermal Resistance
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IRF7822
Electrical Characteristics
Parameter
Drain-to-Source
Breakdown Voltage
BVDSS
Static Drain-Source
on Resistance
RDS(on)
Gate Threshold Voltage
VGS(th)
Drain-Source Leakage
Current
IDSS
Min
Typ
Max
Units
30
–
–
V
5.0
6.5
mΩ
VGS = 4.5V, ID = 15AR
V
VDS = VGS,I D = 250µA
1.0
30
Current*
150
Conditions
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0
µA
VDS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
Current
IGSS
±100
Total Gate Chg Cont FET
QG
44
Total Gate Chg Sync FET
QG
38
VGS = 5.0V, VDS< 100mV
Pre-Vth
Gate-Source Charge
QGS1
13
VDS = 16V, ID = 15A
Post-Vth
Gate-Source Charge
QGS2
3.0
Gate to Drain Charge
QGD
9.0
Switch Chg(Qgs2 + Qgd)
Qsw
12
Output Charge
Qoss
27
Gate Resistance
RG
1.5
Turn-on Delay Time
td (on)
15
Rise Time
tr
5.5
Turn-off Delay Time
td
22
Fall Time
tf
(off)
nA
60
VGS = ±12V
VGS=5.0V, ID=15A, VDS =16V
nC
VDS = 16V, VGS = 0
Ω
VDD = 16V, I D = 15A
ns
VGS = 5.0V
Clamped Inductive Load
12
Input Capacitance
Ciss
–
5500
–
Output Capacitance
Coss
–
1000
–
Reverse Transfer Capacitance Crss
–
300
–
Typ
Max
Units
1.0
V
IS = 15AR, VGS = 0V
nC
di/dt ~ 700A/µs
pF
VDS = 16V, VGS = 0
Source-Drain Rating & Characteristics
Parameter
Min
Diode Forward
Voltage*
VSD
Reverse Recovery
ChargeT
Qrr
Reverse Recovery
Charge (with Parallel
Schottky)T
Qrr(s)
Notes:
2
120
Conditions
VDS = 16V, VGS = 0V, IS = 15A
108
nC
di/dt = 700A/µs
(with 10BQ040)
VDS = 16V, VGS = 0V, IS = 15A
Q Repetitive rating; pulse width limited by max. junction temperature.
R Pulse width ≤ 400 µs; duty cycle ≤ 2%.
S When mounted on 1 inch square copper board
T Typ = measured - Qoss
UTypical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS
measured at VGS = 5.0V, IF = 15A.
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IRF7822
6
ID = 15A
5
1.5
1.0
0.5
0.0
-60 -40 -20
V GS = 4.5V
0
20
40
60
4
2
1
0
80 100 120 140 160
0
TJ , Junction Temperature ( °C)
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 1. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Gate Charge Vs.
Gate-to-Source Voltage
100000
0.010
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
0.009
Coss = Cds + Cgd
0.008
C, Capacitance(pF)
R DS(on) , Drain-to -Source On Resistance ( Ω )
ID = 15A
VDS = 24V
VGS, Gate-to-Source Voltage (V)
R DS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
10000
0.007
ID = 15A
0.006
Ciss
Coss
1000
0.005
Crss
0.004
100
0.003
3.0
4.0
5.0
6.0
VGS, Gate -to -Source Voltage (V)
Fig 3. On-Resistance Vs. Gate Voltage
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7.0
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 4. Typical Capacitance Vs.
Drain-to-Source Voltage
3
IRF7822
100
T J = 175°C
ISD , Reverse Drain Current (A)
ID, Drain-to-Source Current (Α )
100.00
10.00
T J = 25°C
TJ = 150 ° C
10
TJ = 25 ° C
1
VDS = 15V
20µs PULSE WIDTH
1.00
1.0
2.0
3.0
4.0
5.0
0.1
0.2
V GS = 0 V
0.5
0.7
1.0
1.2
VSD ,Source-to-Drain Voltage (V)
VGS, Gate-to-Source Voltage (V)
Fig 5. Typical Transfer Characteristics
Fig 6. Typical Source-Drain Diode
Forward Voltage
100
(Z thJA)
D = 0.50
10
0.20
0.10
Thermal Response
0.05
1
0.02
0.01
P DM
0.1
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D =
2. Peak T
0.01
0.00001
0.0001
0.001
0.01
0.1
t1 / t 2
J = P DM x Z thJA
1
+T A
10
100
t 1, Rectangular Pulse Duration (sec)
Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
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IRF7822
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
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IRF7822
SO-8 Tape and Reel
T E R M INA L NU M B E R 1
12 .3 ( .4 8 4 )
11 .7 ( .4 6 1 )
8 .1 ( .3 1 8 )
7 .9 ( .3 1 2 )
F E E D D IRE C T IO N
NOTES:
1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R .
2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ).
3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 .
33 0 .0 0
(1 2 .9 92 )
M AX .
1 4 .4 0 ( .5 6 6 )
1 2 .4 0 ( .4 8 8 )
N O TES :
1 . CO N T R O L LIN G D IM E N S IO N : M ILL IM E T E R.
2 . OU T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/01
6
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