GB2X100MPS12-227
Silicon Carbide Power
Schottky Diode
VRRM
=
IF,tot,Tc=105°C =
QC
=
Features
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1200 V
200 A*
316nC**
Package
High Avalanche (UIS) Capability
Enhanced Surge Current Capability
175 °C Maximum Operating Temperature
Temperature Independent Switching Behavior
Positive Temperature Coefficient of VF
Extremely Fast Switching Speeds
Superior Figure Of Merit QC/IF
1
2
4
3
Isolated Baseplate
SOT – 227 Advantages
Applications
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Direct Mounting To Heatsink (Electrically Isolated Baseplate)
Low Standby Power Losses
Improved Circuit Efficiency (Lower Overall Cost)
Low Switching Losses
Ease of Paralleling Devices Without Thermal Runaway
Smaller Heat Sink Requirements
Low Reverse Recovery Current
Low Device Capacitance
Low Reverse Leakage Current at Operating Temperature
Automotive Traction Inverters
Power Factor Correction (PFC)
Switched-Mode Power Supply (SMPS)
Solar Inverters
Wind Turbine Inverters
Motor Drives
Induction Heating
Uninterruptible Power Supply (UPS)
Absolute Maximum Ratings at Tj= 175 °C, unless otherwise specified
Parameter
Repetitive peak reverse voltage (Per Leg)
Total forward current (Per Leg)
Total RMS forward current (Per Leg)
Surge non-repetitive forward current, Half Sine
Wave (Per Leg)
Non-repetitive peak forward current (Per Leg)
2
I t value (Per Leg)
Power dissipation (Per Leg)
Operating and storage temperature
Symbol
VRRM
IF total
IF(RMS)
Conditions
TC = 105 oC
TC = 105 oC
Values
1200
100
141
Unit
V
A
A
IF,SM
TC= 25 °C, tP = 10 ms
700
A
IF,max
2
∫i dt
Ptot
Tj, Tstg
TC= 25 °C, tP = 10 µs
TC= 25 °C, tP = 10 ms
TC= 25 °C
3250
900
517
-55 to 175
A
2
As
W
°C
Electrical Characteristics at Tj= 175 °C (per leg), unless otherwise specified
Parameter
Symbol
Diode forward voltage
VF
Reverse current
IR
Total capacitive charge
QC
Switching time
ts
Total capacitance
C
Conditions
IF = 100 A, Tj = 25 °C
IF = 100 A, Tj = 175 °C
VR= 1200 V, Tj = 25 °C
VR= 1200 V, Tj = 175 °C
VR = 400 V
IF ≤ IF,MAX
VR = 960 V
dIF/dt = 200 A/μs
VR = 400 V
Tj= 175 °C
VR = 960 V
VR= 1 V, f = 1 MHz, Tj= 25 °C
VR= 400 V, f = 1 MHz, Tj= 25 °C
VR= 1000 V, f = 1 MHz, Tj= 25 °C
min.
Values
typ.
1.45
2.1
10
100
316
494
max.
1.8
2.6
500
2000
Unit
V
µA
nC
50
ns
5883
405
284
pF
0.29**
°C/W
Thermal Characteristics
Thermal resistance, junction–case, per leg
RthJC
* Per Device, ** Per Leg
June 2016
Latest version of this datasheet at:http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
Pg 1 of 3
GB2X100MPS12-227
Figure 1: Typical Forward Characteristics (Per Leg)
Figure 2: Typical Reverse Characteristics (Per Leg)
Figure 3: Typical Junction Capacitance vs Reverse
Voltage Characteristics (Per Leg)
Figure 4: Typical Capacitive Energy vs Reverse Voltage
Characteristics (Per Leg)
June 2016
Latest version of this datasheet at:http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
Pg 2 of 3
GB2X100MPS12-227
Package Dimensions:
SOT-227
PACKAGE OUTLINE
NOTE
1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER.
2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS
Revision History
Date
Revision
Comments
2016/06/16
0
Initial release
Supersedes
Published by
GeneSiC Semiconductor, Inc.
43670 Trade Center Place Suite 155
Dulles, VA 20166
GeneSiC Semiconductor, Inc. reserves right to make changes to the product specifications and data in this document without notice.
GeneSiC disclaims all and any warranty and liability arising out of use or application of any product. No license, express or implied to any
intellectual property rights is granted by this document.
Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft
navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal
injury and/or property damage.
June 2016
Latest version of this datasheet at:http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
Pg 3 of 3
GB2X100MPS12-227
SPICE Model Parameters
This is a secure document. Please copy this code from the SPICE model PDF file on our website
(http://www.genesicsemi.com/images/products_sic/rectifiers/GB2X100MPS12-227_SPICE.pdf)
into
LTSPICE (version 4) software for simulation of the GA2X100MPS12-227; per leg.
*
MODEL OF GeneSiC Semiconductor Inc.
*
*
*
*
*
*
*
$Revision:
1.0
$Date:
25-MAY-2016
*
*
COPYRIGHT (C) 2016 GeneSiC Semiconductor Inc.
ALL RIGHTS RESERVED
*
*
$
$
GeneSiC Semiconductor Inc.
43670 Trade Center Place Ste. 155
Dulles, VA 20166
* These models are provided "AS IS, WHERE IS, AND WITH NO WARRANTY OF ANY
*KIND EITHER EXPRESSED OR IMPLIED, INCLUDING BUT NOT LIMITEDTO ANY IMPLIED
* WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE."
* Models accurate up to 2 times rated diode current.
*
* Start of GB2X50MPS12-227 SPICE Model; per leg
*
.SUBCKT GB2X100MPS12 ANODE KATHODE
D1 ANODE KATHODE GB2X100MPS12_SCHOTTKY
D2 ANODE KATHODE GB2X100MPS12_SURGE
D1 ANODE KATHODE GB2X100MPS12_SCHOTTKY
D2 ANODE KATHODE GB2X100MPS12_SURGE
.MODEL GB2X100MPS12_SCHOTTKY D
+ IS
1.99E-16
RS
0.015652965
+ N
1
IKF
1000
+ EG
1.2
XTI
3
+ TRS1
0.0042
TRS2
1.3E-05
+ CJO
3.86E-09
VJ
1.362328465
+ M
0.48198551
FC
0.5
+ TT
1.00E-10
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
50
TYPE
SiC_Schottky
+ MFG
GeneSiC_Semi
.MODEL GB2X100MPS12_SURGE D
+ IS
1.54E-19
RS
0.1
+ TRS1
-0.004
N
3.941
+ EG
3.23
IKF
19
+ XTI
0
FC
0.5
+ TT
0
BV
1200
+ IBV
1.00E-03
VPK
1200
+ IAVE
50
TYPE
SiC_PiN
.ENDS
*
* End of GB2X100MPS12-227 SPICE Model
June 2016
Latest version of this datasheet at:http://www.genesicsemi.com/commercial-sic/sic-schottky-rectifiers/
Pg 1 of 1